CN106405754B - A kind of structure stand of optical fiber module and preparation method thereof - Google Patents
A kind of structure stand of optical fiber module and preparation method thereof Download PDFInfo
- Publication number
- CN106405754B CN106405754B CN201611051749.4A CN201611051749A CN106405754B CN 106405754 B CN106405754 B CN 106405754B CN 201611051749 A CN201611051749 A CN 201611051749A CN 106405754 B CN106405754 B CN 106405754B
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- Prior art keywords
- optical fiber
- wafer
- pad
- fiber module
- structure stand
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4237—Welding
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/424—Mounting of the optical light guide
- G02B6/4243—Mounting of the optical light guide into a groove
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
Abstract
The invention discloses a kind of structure stand of optical fiber module and preparation method thereof, the structure stand includes at least two pieces of wafers being bonded together, and optical fiber groove is offered on wafer opposite face, and the optical fiber groove of two wafers, which is mutually equipped with, forms optical-fibre channel；The upper strata wafer side wall of corresponding fiber channel interface and upper strata wafer upper surface are provided with pad；The same side wall that lower floor's wafer is provided with pad with upper strata wafer is also equipped with pad；The optical signal transceiver chip of the optical fiber module is welded on the pad of two wafer side walls, and the electrical chip of optical fiber module is welded on the pad of top layer wafer upper surface.The structure stand of the present invention is simple in construction, can simplify the welding procedure of light receiving part and light emitting portion device in follow-up optical fiber module, improves production efficiency.
Description
Technical field
The present invention relates to technical field of photo communication, particularly a kind of structure stand of optical fiber module.
Background technology
Communication network development was rapid in recent years, widely available with fiber optic communication, and communication network is faced with offer faster
The active demand of transmission rate, more short time-delay, higher frequency band and more low running cost.Because current fiber resource is nervous, newly
Lay costly, and base station distribution is distant, therefore SFP（SFP+）The Snigle of encapsulation
Demand incrementally increases.
Single fiber bi-directional optical fiber transceiver is to use wavelength-division multiplex technique, and the transmission of data is realized on an optical fiber and is connect
Receive, the photoelectric conversion device that network telecommunication number and optical signal are changed mutually.SFP Snigles are divided into light-receiving
Launch two parts with light, wherein light receiving part is by optical receiver, trans-impedance amplifier, limiting amplifier and corresponding charger
Part forms；Light emitting portion is mainly made up of light source, drive circuit, control circuit, photodetector and generating laser.In reality
In the production of border, optical receiver, trans-impedance amplifier, limiting amplifier, optical fiber, light source, drive circuit, control circuit, photodetector
All it is independent device, it is necessary to which a support comes these independent combination of devices in a module with generating laser etc.
Face, so that each several part device can play respective effect.
In module manufacturing process, more advanced way is first to carry out the carrier with welding effect, then in carrier
The device of upper welding light-receiving and light emitting portion, is finally inserted optical fiber, and the fixation of optical fiber end has generally also needed to V-groove etc.
Design, structure are more complicated.
The content of the invention
The technical problem to be solved in the invention be to provide a kind of optical fiber module simple in construction structure stand and
The preparation method of the structure stand, with the Welder of light receiving part and light emitting portion device in the follow-up optical fiber module of simplification
Skill.
In order to solve the above technical problems, the technical solution used in the present invention is as follows.
A kind of structure stand of optical fiber module, including at least two pieces of wafers being bonded together, open on wafer opposite face
Provided with optical fiber groove, the optical fiber groove of two wafers, which is mutually equipped with, forms optical-fibre channel；The upper strata wafer side of corresponding fiber channel interface
Wall and upper strata wafer upper surface are provided with pad；The same side wall that lower floor's wafer is provided with pad with upper strata wafer is also provided with
There is pad；The optical signal transceiver chip of the optical fiber module is welded on the pad of two wafer side walls, the electrical chip of optical fiber module
It is welded on the pad of top layer wafer upper surface.
A kind of structure stand of above-mentioned optical fiber module, be followed successively by from bottom to top on the pad layers of copper, nickel dam, palladium layers and
Layer gold, the thickness of the nickel dam is 2um ~ 10um, and the thickness of palladium layers is 100nm ~ 10um, and the thickness of layer gold is 50nm ~ 100nm.
A kind of structure stand of above-mentioned optical fiber module, the cross section of the optical fiber groove is triangle, square, semicircle
Or it is trapezoidal in one kind.
A kind of preparation method of the structure stand of optical fiber module, it is characterised in that comprise the following steps：
A. pad and silicon hole TSV are made in wafer upper surface；
B. optical fiber groove is opened up in crystal column surface, two wafers is combined together to form optical fiber by bonding technology and lead to
Road；
C. expose side wall solder joint by photoetching and etching technics and support is separated from wafer
D. optical signal transceiver chip and electrical chip are welded on support.
A kind of preparation method of the structure stand of above-mentioned optical fiber module, step A are specifically included：
A1. surface pads are defined in crystal column surface by photoetching process, and etches pad, pad depth 1um ~
100um；
A2. silicon hole TSV, TSV depth 10um ~ 500um is defined by photoetching and etching in wafer one end；TSV diameters
10um~500um；
A3. TSV and bond pad surface deposited copper metal are made by electroplating technology, ground by CMP, pad is exposed wafer
Surface,
A4. changing plating makes bond pad surface deposit NiPdAu；Thickness 2um ~ 10um of nickel, thickness 100nm ~ 10um of palladium, gold are thick
Spend 50nm ~ 100nm.
A kind of preparation method of the structure stand of above-mentioned optical fiber module, step C's concretely comprises the following steps：Wafer after para-linkage
Upper strata wafer carry out photoetching and etching technics, the side wall and bottom metal for making silicon hole TSV are exposed, while to bottom
It is thinned, separates support.
It is as follows as a result of above technical scheme, the invention technological progress.
Wafer of two surfaces with optical fiber groove structure is combined to form optical fiber by bonding method and led to by the present invention face-to-face
Road, the pad of light-receiving and light emitting portion device is then done in crystal column surface and side by photoetching and electroplating technology, makes this
Support, which has, receives and launches two kinds of functions, enormously simplify follow-up module welding procedure, improves production efficiency.
Brief description of the drawings
The form of wafer first that Fig. 1 is formed by step A of the present invention；
Fig. 2,3 by the step B of the present invention forms of wafer second formed top view；
The side view of Fig. 4,8,9,10 by the step B of the present invention forms of wafer second formed；
Side views of the Fig. 5 by the step C of the present invention forms of wafer the 3rd formed；
Side views of the Fig. 6 by the step D of the present invention forms of wafer the 4th formed；
Fig. 7 is the side view after present invention welding optical fiber module device；
The wafer side view that Figure 11 is formed by step C in the embodiment of the present invention 2；
Figure 12 is that the side view after optical fiber module device is welded in the embodiment of the present invention 2；
Figure 13 is the structural scheme of mechanism that the embodiment of the present invention 2 is applied on golden finger.
Wherein：101. wafer, 102. optical fiber grooves, 103.TSV side walls, 104.TSV bottoms, 105. electrical chips, 106. light
Signal transmitting and receiving chip, 107. routings, 108. pads, 109. golden fingers, 110. silicon hole TSV.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in further detail.
A kind of structure stand of optical fiber module, including at least two pieces of wafers 101 being bonded together, on wafer opposite face
Optical fiber groove 102 is offered, as shown in Figures 2 and 3, the optical fiber groove of two wafers, which is mutually equipped with, forms optical-fibre channel, optical fiber groove
Cross section can be triangle, it is square, semicircle or trapezoidal in one kind, as shown in Fig. 4,8,9,10；The width of optical fiber groove
Spend for 100um ~ 1000um, optical fiber groove can be it is wide, it is as shown in Figure 2 or trapezoidal, as shown in Figure 3.
The upper strata wafer side wall of corresponding fiber channel interface and upper strata wafer upper surface are provided with pad 108, lower floor
The same side wall that wafer is provided with pad with upper strata wafer is also equipped with pad, as shown in fig. 7, having successively from bottom to top on pad
Layers of copper, nickel dam, palladium layers and layer gold, the thickness of nickel dam is 2um ~ 10um, and the thickness of palladium layers is 100nm ~ 10um, and the thickness of layer gold is
50nm~100nm。
The optical signal transceiver chip 106 of optical fiber module is welded on the pad of two wafer side walls, the electrical chip of optical fiber module
105 are welded on the pad of top layer wafer upper surface, as shown in figures 7 and 12.
A kind of preparation method of the structure stand of optical fiber module, including mainly comprise the following steps：Made in wafer upper surface
Pad and silicon hole TSV；Optical fiber groove is opened up in crystal column surface, two wafers is combined together to form light by bonding technology
Fine passage；Expose side wall solder joint by photoetching and etching technics and support is separated from wafer；Light letter is welded on support
Number transceiving chip and electrical chip.
Embodiment 1
In the present embodiment, the structure stand of optical fiber module is formed by two pieces of wafer manufacturings, the lower surface of upper strata wafer and
The upper surface of lower floor's wafer offers optical fiber groove 102 respectively, and the optical fiber groove of two wafers, which is mutually equipped with, forms optical-fibre channel, corresponding
The upper strata wafer side wall of fiber channel interface and upper strata wafer upper surface are provided with pad, and lower floor's wafer is set with upper strata wafer
The same side wall for being equipped with pad is also equipped with pad；The optical signal transceiver chip of optical fiber module is welded on the pad of two wafer side walls
On, the electrical chip of optical fiber module is welded on the pad of top layer wafer upper surface, as shown in Figure 7.
The specific preparation method of the present embodiment is as follows.
A. pad and silicon hole TSV are made in wafer upper surface.
A1. as shown in figure 1, defining surface pads on the upper surface surface of upper strata wafer by photoetching process first, and
Etch pad, pad depth 1um ~ 100um.Pad can be divided into two kinds, and one kind is that chip welding is done in upper surface, and another kind is
Routing is done, is used to do chip welding in the present embodiment.
A2. silicon hole TSV, TSV depth 10um ~ 500um is defined by photoetching and etching in upper strata wafer one end；TSV
Diameter 10um ~ 500um.
A3. TSV and bond pad surface deposited copper metal are made by electroplating technology, ground by CMP, pad is exposed wafer table
Face.
A4. changing plating makes bond pad surface deposit NiPdAu；The thickness 2um of nickel, the thickness 100nm, golden thickness 50nm of palladium.
Silicon hole TSV can be plated full during plating is changed；After one layer of copper can also be plated, continue bottom hole and be filled up completely with,
Packed height is in hole depth 1/10th between half.
B. optical fiber groove is opened up in crystal column surface, two wafers is combined together to form optical fiber by bonding technology and lead to
Road.As shown in Fig. 2 optical fiber ditch is defined by lithographic definition respectively in the lower surface of upper strata wafer and the upper surface of lower floor's wafer
Road, for channel width in 100um, raceway groove is wide；Made by dry etching or wet-etching technology in crystal column surface
Formed with optical fiber groove 102 is made；The section of optical fiber groove can be triangle, square, semicircle or trapezoidal, the present embodiment
In, optical fiber groove is square, as shown in Figure 4；Two wafer bondings are made together by bonding technology, bonding technology can be silicon
Si direct bonding or the bonding of copper copper etc..
For the upper strata wafer after bonding, there is pad its upper surface, herein opposite side of the optical fiber groove in pad face；For
Lower floor is bonded wafer, then optical fiber groove can be in the same side in pad face, can also be in opposite side.
C. the upper strata wafer of wafer carries out photoetching and etching technics after para-linkage, makes silicon hole TSV side wall 103 and bottom
Portion's metal 104 exposes, as shown in figure 5, bottom is thinned simultaneously, separates support, as shown in Figure 6.
D. optical signal transceiver is welded on the upper strata wafer of corresponding optical fiber groove and lower floor's wafer side wall by welding procedure
Chip 106, while in the upper surface welding electric core piece 105 of upper strata wafer, make support that there is optical signal transceiver function, such as Fig. 7 institutes
Show.
Embodiment 2
The present embodiment and the difference of embodiment 1 are：Comprising multi-disc wafer stacked on top of one another, lead between adjacent wafers
Cross bonding technology to be assembled together, intermediate layer wafer is identical with top layer crystal circle structure, and the silicon hole TSV of all wafers can be right
Solder joint in the wafer of upper strata, as shown in figure 11, so as to which electric signal, which is directed to, topmost to be had on the top layer wafer of pad.Light
The optical signal transceiver chip of fine module is welded on the pad of adjacent two wafers side wall, and the electrical chip of optical fiber module is welded on top layer
On the pad of wafer upper surface, as shown in figure 12.
The structure that the present embodiment is applied on golden finger is as shown in figure 13, by the support being welded directly with golden finger
109 PCB is bound together on substrate pedestal, the pad of routing 107 on support is interconnected with golden finger by routing technique, is reached
To the purpose of electrical communication.
Claims (6)
- A kind of 1. structure stand of optical fiber module, it is characterised in that：Including at least two pieces of wafers being bonded together（101）, Optical fiber groove is offered on wafer opposite face（102）, the optical fiber groove of two wafers, which is mutually equipped with, forms optical-fibre channel；Corresponding optical fiber leads to The upper strata wafer side wall of pipeline joint and upper strata wafer upper surface are provided with pad（108）；Lower floor's wafer is set with upper strata wafer The same side wall for being equipped with pad is also equipped with pad；The optical signal transceiver chip of the optical fiber module（106）It is welded on the pad of two wafer side walls, the battery core of optical fiber module Piece（105）It is welded on the pad of top layer wafer upper surface.
- A kind of 2. structure stand of optical fiber module according to claim 1, it is characterised in that：On the pad from lower and On be followed successively by layers of copper, nickel dam, palladium layers and layer gold, the thickness of the nickel dam is 2um ~ 10um, and the thickness of palladium layers is 100nm ~ 10um, The thickness of layer gold is 50nm ~ 100nm.
- A kind of 3. structure stand of optical fiber module according to claim 1, it is characterised in that：The optical fiber groove （102）Cross section for triangle, it is square, semicircle or trapezoidal in one kind.
- 4. a kind of preparation method of the structure stand of optical fiber module as claimed in claim 1, it is characterised in that including following Step：A. pad and silicon hole TSV are made in wafer upper surface；B. optical fiber groove is opened up in crystal column surface, two wafers is combined together to form optical-fibre channel by bonding technology；C. expose side wall solder joint by photoetching and etching technics and support is separated from waferD. optical signal transceiver chip and electrical chip are welded on support.
- A kind of 5. preparation method of the structure stand of optical fiber module according to claim 4, it is characterised in that step A Specifically include：A1. surface pads are defined in crystal column surface by photoetching process, and etches pad, pad depth 1um ~ 100um；A2. silicon hole TSV, TSV depth 10um ~ 500um is defined by photoetching and etching in wafer one end；TSV diameters 10um ~ 500um；A3. TSV and bond pad surface deposited copper metal are made by electroplating technology, ground by CMP, pad is exposed crystal column surface,A4. changing plating makes bond pad surface deposit NiPdAu；Thickness 2um ~ 10um of nickel, thickness 100nm ~ 10um of palladium, golden thickness 50nm~100nm。
- A kind of 6. preparation method of the structure stand of optical fiber module according to claim 4, it is characterised in that step C Concretely comprise the following steps：The upper strata wafer of wafer carries out photoetching and etching technics after para-linkage, makes silicon hole TSV side wall and bottom Metal exposes, while bottom is thinned, and separates support.
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| CN201611051749.4A CN106405754B (en) | 2016-11-25 | 2016-11-25 | A kind of structure stand of optical fiber module and preparation method thereof |
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| CN201611051749.4A CN106405754B (en) | 2016-11-25 | 2016-11-25 | A kind of structure stand of optical fiber module and preparation method thereof |
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| CN106405754B true CN106405754B (en) | 2018-01-16 |
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| US6874950B2 (en) * | 2002-12-17 | 2005-04-05 | International Business Machines Corporation | Devices and methods for side-coupling optical fibers to optoelectronic components |
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| US4874217A (en) * | 1987-04-21 | 1989-10-17 | Stc Plc | Light source and detector packages |
| US5812716A (en) * | 1996-01-31 | 1998-09-22 | The Furukawa Electric Co., Ltd. | Optical module and a temperature control method therefor |
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| CN106405754A (en) | 2017-02-15 |
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