CN104793298B - Load board structure with side welding plate and manufacturing method of load board structure - Google Patents
Load board structure with side welding plate and manufacturing method of load board structure Download PDFInfo
- Publication number
- CN104793298B CN104793298B CN201510172489.5A CN201510172489A CN104793298B CN 104793298 B CN104793298 B CN 104793298B CN 201510172489 A CN201510172489 A CN 201510172489A CN 104793298 B CN104793298 B CN 104793298B
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- copper
- bonding pads
- support plate
- seed layer
- plate preparation
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/428—Electrical aspects containing printed circuit boards [PCB]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Structure Of Printed Boards (AREA)
Abstract
The invention discloses a load board structure with a side welding plate and a manufacturing method of the load board structure. The manufacturing method includes the following steps of 1), etching rectangular grooves; 2), growing an insulation layer; 3), growing an electroplating seed layer; 4), performing copper plating; 5), subjecting to a copper layer to imaging; 6), passivating the insulation layer on the surface of the copper layer; 7), etching a carrier between every two neighboring rectangular grooves, a silicon dioxide insulation layer and the electroplating seed layer out of the side face of the copper layer; 9), performing surface processing on exposed copper layer; 10), performing scribing; 11), wire welding gold lines. The manufacturing method of a load board is standard and stable in technology, low in cost, easy to process and suitable for mass production.
Description
Technical field
The invention belongs to optoelectronic packaging techniques field, more particularly to a kind of carrying board structure with side bonding pads and its making
Method.
Background technology
Vertical cavity surface emitting laser (VCSEL) and face are shared the same light by photo-detector, and directly alignment is coupled fibre, although coupling is imitated
Rate is high, but optical fiber direction is swashed device (VCSEL) with vertical-cavity surface-emitting and receives photo-detector vertical with face；Generally, vertical-cavity surface-emitting
Laser instrument (VCSEL) and face are put down parallel by the upper and lower surface of photo-detector with circuit board, so now optical fiber direction and circuit
It is mutually perpendicular between plate face；As bending radius is limited, the bending half of particularly fibre ribbon is larger so this coupled modes
Application scenarios generally need to reserve larger space in circuit board plane vertical direction, such as more than 5 centimetres.This size
Space requirement, it is clear that be unfavorable for that module is minimized.
At present, the light for vertical cavity surface emitting laser (VCSEL) and face by photo-detector for electrooptical device is received
Send out in module and component, the method for solution optical fiber direction and the perpendicular problem of circuit board plane mainly there are two kinds, and a kind of method is
90 degree of steerings of light path, such as United States Patent (USP) " the Multi-optical Fiber of Avago companies are realized using 45 degree of light reflection mirrors
Connector Module for Use With A Transceiver Module and Method For Coupling
Optical Signals Between The Transceiver Module and Multiple Optical Fibers”
(the patent No.：US7543994B2).A kind of method for increasing the optics in coupling optical path of this patent disclosure is realizing mould
Light path needed for block, the problem that this method is brought it assembly difficulty is increased, while increase optics can cause volume
Outer loss, causes coupling efficiency to reduce.45 degree of light reflection mirrors are moved to optical fiber by teacher Cao Mingcui of the Central China University of Science and Technology etc.
End face, wherein state's patent " the parallel optical fiber array coupling componen element " (patent No.：03128028.5), in, the exposed fibre core in end is added
Work optical flat at 45 °, this method need fiber end face grinding and Angle ambiguity, while coupling efficiency also no fiber end face
Direct-coupling is high.
Another kind of method is constituted using flexible circuit board or flexible circuit board and rigid printed circuit boards
Hard and soft mixed plate, using flexible circuit board can around folding characteristic, by flexible circuit board bend 90 degree, realize circuit
90 degree of steerings, such as United States Patent (USP) " Fiber Optic Connections and Method for Using Same " (patent
Number：6712527 B1 of US), but the making maturity of flexible circuit board is also far away from rigid printed circuit boards, it is flexible at present
The number of plies of printed circuit board is few (layer 2-4), and the high frequency characteristics of sheet material does not have rigid sheet material good yet, expensive, relatively costly.
The content of the invention
An object of the present invention is to provide a kind of support plate preparation method with side bonding pads, the load made by the method
Electricity interlinkage can be realized in its front of dish structure and side, to solve optical transceiver module and module production process in prior art
Present in the problems referred to above.
Another object of the present invention is to provide a kind of carrying board structure with side bonding pads, its front of the carrying disc structure and side
Electricity interlinkage can be realized in face, to solve above-mentioned present in optical transceiver module and module production process in prior art asking
Topic.
It is that, up to this purpose, the present invention is employed the following technical solutions：
A kind of support plate preparation method with side bonding pads, which comprises the following steps：
1) at least two rectangular channels, the rectangular channel arranged for interval is etched on carrier；
2) the one side growth silicon dioxide insulating layer of rectangular channel is etched on carrier；
3) in the superficial growth plating seed layer of silicon dioxide insulating layer；
4) electro-coppering is carried out on the surface of plating seed layer；
5) carry out layers of copper graphical, expose plating seed layer；
6) in layers of copper surface passivation insulating barrier；
7) etching electroplating Seed Layer；
8) carrier between two neighboring rectangular channel, silicon dioxide insulating layer and plating seed layer are etched and exposes layers of copper side
Face；
9) layers of copper to exposing is surface-treated；
10) scribing；
11) wire bond gold thread.
Especially, the step 1) in carrier be made up of any one material of silicon or glass.
Especially, the step 2) in insulating barrier using silica, silicon nitride or other organic insulation.
Especially, the step 2) in pass through thermal oxide or plasma chemistry vapor phase deposition method and grow insulating barrier.
Especially, the step 4) in electro-coppering cover the plating seed layer in carrier end face and rectangle groove sidewall.
Especially, the step 8) in etch the insulation of carrier and carrier surface between two neighboring rectangular channel first
Layer；Then insulating barrier and plating seed layer in two rectangular channels on the outside of layers of copper is etched again exposes layers of copper side wall.
Especially, the step 8) between two neighboring rectangular channel carrier etching depth more than the rectangular channel depth
Degree, in order to scribing.A kind of carrying board structure with side bonding pads, wherein, the front and side of the carrying board structure are respectively provided with use
The electrode of electricity interlinkage is carried out in two sides.
Beneficial effects of the present invention are, compared with prior art described carrying board structure with side bonding pads and preparation method thereof
With advantages below：
1) the support plate preparation method technological standards with side bonding pads, stable, low cost, batch easy to process, suitable
Production.
2) front and side of the carrying board structure with side bonding pads is respectively provided with the electricity for carrying out electricity interlinkage for two sides
Pole, not only realizes relatively independent, the photoelectricity part of pure electricity part and photoelectricity part in optical transceiver module and component internal structure
The relation of upstream and downstream can be formed with optical transceiver module and component, certainly will can make more enterprises participate in optical transceiver module and
Component industry, is conducive to the development in pluralism of optical transceiver module and component.And it is easy to assembling；Low cost.
Description of the drawings
Fig. 1 is the etching rectangular channel of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
Schematic diagram；
Fig. 2 is the growth silica of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
The schematic diagram of insulating barrier；
Fig. 3 is the growth plating seed of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
The schematic diagram of layer；
Fig. 4 is that showing for copper is filled out in the plating of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
It is intended to；
Fig. 5 is that the layers of copper of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided is patterned
Schematic diagram；
Fig. 6 is the passivation insulation of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
Schematic diagram；
Fig. 7 is the etching electroplating seed of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
The schematic diagram of layer；
Fig. 8 is that the etching silicon of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided exposes copper
The schematic diagram of the silica of wall side；
Fig. 9 is the etching copper wall side of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
The schematic diagram of silica and plating seed layer；
Figure 10 is showing for the surface treatment of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
It is intended to；
Figure 11 is the signal of the scribing of the support plate preparation method with side bonding pads that the specific embodiment of the invention 1 is provided
Figure；
Figure 12 is the schematic diagram of the carrying board structure with side bonding pads that the specific embodiment of the invention 1 is provided.
In figure：
1st, silicon wafer；2nd, rectangular channel；3rd, silicon dioxide insulating layer；4th, Seed Layer；5th, layers of copper；6th, insulating barrier；7th, NiPdAu
Coating；8th, gold thread.
Specific embodiment
Technical scheme is further illustrated below in conjunction with the accompanying drawings and by specific embodiment.
Refer to shown in Fig. 1 to Figure 12, in the present embodiment, a kind of support plate preparation method with side bonding pads, it include with
Lower step：
1) two rectangular channels 2 of etching on silicon wafer 1,2 parallel interval of rectangular channel arrangement；
2) one side for etching rectangular channel 2 on silicon wafer 1 passes through thermal oxide growth silicon dioxide insulating layer 3；
3) in the superficial growth plating seed layer 4 of silicon dioxide insulating layer 3；
4) electro-coppering is carried out on the surface of plating seed layer 4, etch one side and the square of rectangular channel 2 on the silicon wafer 1
Layers of copper 5 is formed in shape groove 2, and the layers of copper 5 is full without the need for plating, need to only cover the side wall of 1 end face of silicon wafer and rectangular channel 2；
5) layers of copper 5 is patterned as needed, exposes Seed Layer 4；
6) in 5 surface passivation insulating barrier 6 of layers of copper；
7) etch step 5) in the Seed Layer 4 exposed；
8) silicon dioxide insulating layer 3 on 1 surface of silicon wafer 1 and silicon wafer between two neighboring rectangular channel 2 is etched, it is described
Depth of the etching depth of silicon wafer 1 more than the rectangular channel 2；
9) etch the side wall that 3 layers of silicon dioxide insulator in two rectangular channels 2 on the outside of layers of copper and Seed Layer 4 expose layers of copper 5；
10) to 5 the carrying out NiPdAu of layers of copper for exposing, form NiPdAu coating 7；
11) scribing；Part of the silicon wafer 1 from the middle of described two rectangular channels 2 is scratched；
12) wire bond gold thread 8.
Referring to shown in Figure 12, the front and side of the carrying board structure made using above-mentioned support plate preparation method are had
Have carries out the electrode of electricity interlinkage for two sides.
Above example simply elaborates the general principle and characteristic of the present invention, and the present invention is not limited by above-mentioned example,
Without departing from the spirit and scope, the present invention also has various change and change, and these changes and change both fall within
In scope of the claimed invention.The claimed scope of the invention is by appending claims and its equivalent thereof.
Claims (8)
1. a kind of support plate preparation method with side bonding pads, it is characterised in which comprises the following steps：
1) at least two rectangular channels, the rectangular channel arranged for interval is etched on carrier；
2) the one side growth insulating barrier of rectangular channel is etched on carrier；
3) in the superficial growth plating seed layer of insulating barrier；
4) electro-coppering is carried out on the surface of plating seed layer；
5) carry out layers of copper graphical, expose plating seed layer；
6) in layers of copper surface passivation insulating barrier；
7) etching electroplating Seed Layer；
8) carrier between two neighboring rectangular channel, silicon dioxide insulating layer and plating seed layer are etched and exposes layers of copper side；
9) layers of copper to exposing is surface-treated；
10) scribing；
11) wire bond gold thread.
2. the support plate preparation method with side bonding pads according to claim 1, it is characterised in that the step 1) in load
Body is made up of any one material of silicon or glass.
3. the support plate preparation method with side bonding pads according to claim 1, it is characterised in that the step 2) in it is exhausted
Edge layer adopts silica or silicon nitride any one insulating materials.
4. the support plate preparation method with side bonding pads according to claim 1, it is characterised in that the step 2) in pass through
Thermal oxide or plasma chemistry vapor phase deposition method growth insulating barrier.
5. the support plate preparation method with side bonding pads according to claim 1, it is characterised in that the step 4) in electricity
Copper facing covers carrier end face and the plating seed layer in rectangle groove sidewall.
6. the support plate preparation method with side bonding pads according to claim 1, it is characterised in that the step 8) in first
Etch the insulating barrier of the carrier and carrier surface between two neighboring rectangular channel；Then etch again in two rectangular channels on the outside of layers of copper
Insulating barrier and plating seed layer expose layers of copper side wall.
7. the support plate preparation method with side bonding pads according to any one of claim 1 to 6, it is characterised in that the step
It is rapid 8) between two neighboring rectangular channel carrier etching depth more than the rectangular channel depth, in order to scribing.
8. the carrying board structure that a kind of support plate preparation method of any one of employing the claims 1-7 with side bonding pads makes, its
It is characterised by, the front and side of the carrying board structure are respectively provided with the electrode for carrying out electricity interlinkage for two sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510172489.5A CN104793298B (en) | 2015-04-13 | 2015-04-13 | Load board structure with side welding plate and manufacturing method of load board structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510172489.5A CN104793298B (en) | 2015-04-13 | 2015-04-13 | Load board structure with side welding plate and manufacturing method of load board structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104793298A CN104793298A (en) | 2015-07-22 |
| CN104793298B true CN104793298B (en) | 2017-03-22 |
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| CN201510172489.5A Active CN104793298B (en) | 2015-04-13 | 2015-04-13 | Load board structure with side welding plate and manufacturing method of load board structure |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106443912B (en) * | 2016-12-15 | 2018-10-02 | 华进半导体封装先导技术研发中心有限公司 | A kind of optical interconnection module |
| CN112702836B (en) * | 2020-12-28 | 2022-03-15 | 华进半导体封装先导技术研发中心有限公司 | Slide glass structure with side wall bonding pad and manufacturing method thereof |
| CN113555326A (en) * | 2021-06-03 | 2021-10-26 | 珠海越亚半导体股份有限公司 | Packaging structure capable of wetting side face, manufacturing method thereof and vertical packaging module |
| CN114423176B (en) * | 2021-12-28 | 2023-12-01 | 芯讯通无线科技（上海）有限公司 | PCB (printed circuit board) comprising side PIN PINs, manufacturing method of PCB and communication module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6638863B2 (en) * | 2001-04-24 | 2003-10-28 | Acm Research, Inc. | Electropolishing metal layers on wafers having trenches or vias with dummy structures |
| JP2005084203A (en) * | 2003-09-05 | 2005-03-31 | Sharp Corp | Optical wiring board and manufacturing method of optical module using it |
| CN100461389C (en) * | 2005-04-25 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | Planar pad design and production |
| CN102403236B (en) * | 2010-09-07 | 2015-03-04 | 万国半导体(开曼)股份有限公司 | The semiconductor device of chip exposed and production method thereof |
| CN103367564A (en) * | 2012-04-05 | 2013-10-23 | 上海鼎晖科技有限公司 | Design of COB (Chip on Board) module group with high light extraction rate |
| JP5877756B2 (en) * | 2012-05-08 | 2016-03-08 | 日東電工株式会社 | Opto-electric hybrid board and manufacturing method thereof |
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