CN102073109B - Manufacturing method of QSFP (Quad Small Form-factor Pluggable) module subelement - Google Patents
Manufacturing method of QSFP (Quad Small Form-factor Pluggable) module subelement Download PDFInfo
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- CN102073109B CN102073109B CN 201010598366 CN201010598366A CN102073109B CN 102073109 B CN102073109 B CN 102073109B CN 201010598366 CN201010598366 CN 201010598366 CN 201010598366 A CN201010598366 A CN 201010598366A CN 102073109 B CN102073109 B CN 102073109B
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Abstract
The invention relates to the technical field of micro-electronic and optoelectronic devices, and discloses a manufacturing method of a QSFP (Quad Small Form-factor Pluggable) module subelement which comprises the following steps: step 1, prefixing a transmitting terminal reflecting mirror (202) and a receiving terminal reflecting mirror (203) on a daughter board (201); step 2, etching a first concave pit (206) and a second concave pit (207) on a mother board; step 3, coating a fixed layer (205) on the bottom surface of the inner walls of the first concave pit (206) and the second concave pit (207); and step 4, protecting the places not requiring etching through a mask plate, and etching integrally again to form an optical waveguide layer (304). The QSFP module subelement manufactured by the method can be produced on a large scale, and the processing technology and the existing micro-electronic technology are compatible.
Description
Technical field
The present invention relates to technical field of microelectronic devices, relate in particular to a kind of QSFP (four-way pluggable optical module: the manufacturing approach of modular sub-units Quad Small Form-factor Pluggable).
Background technology
Optical communication system and electrical communication system with compare; Have that bandwidth is big, loss is low, do not allow to be subject to electromagnetic interference (EMI), weight light, be difficult for by advantages such as eavesdroppings; Increase day by day along with bandwidth demand; Parallel optical fibre has become the desirable alternative that parallel coaxial interconnect is used, and the active optical cable of QSFP provides hot-swappable scheme and other serial scheme of every passage 3.125Gbps to the 10Gbps data rate to compare; The QSFP scheme can be improved more than the density twice of connectivity port; Four-way QSFP always transmits data can be up to 40Gbps even higher, and the QSFP scheme of optical fiber technology can be brought longer transmission range and littler crooked process radius simultaneously, has vast market prospect.The active optical cable of QSFP costs an arm and a leg, and one of important reasons is that coupling steering structure cost is expensive.Adopt dual mode to realize the turning of signal at present, the one, the circuit bending, another kind is the light path bending, along with the increase of frequency, the cost of circuit bending and volume are main restraining factors.Light path be bent with a variety of implementation methods, wherein the passive coupling method is reducing cost, is realizing to have than remarkable advantages aspect the large-scale production.
Based on the encapsulation technology remarkable advantages of wafer scale, in recent years, some research institutions have done improvement to traditional upside-down mounting for the hybrid integration technology on basis, have obtained bigger progress.Wherein, the most noticeable achievement has two: first is University of California--Santa Barbara and the mixing integrated device that combines based on chip-scale of Intel company joint study; Second is the mixing integrated device based on chip and wafer combination of Ghent, Belgium university.Be different from traditional packaging technology, wafer-level packaging production cycle and cost decline to a great extent, and the required number of pins of chip is reduced, and have improved integrated level.
In the existent technique; The technology that QSFP manufacturer adopts is difference slightly also, and some adopt 4 continuously adjustable 1550nm laser instruments and optical waveguide side-coupled, and detector array and waveguide employing flip chip bonding and waveguide are carried out vertical coupled through grating; The coupling of optical fiber and waveguide is carried out vertical coupled through grating; Accomplish 90 ° of turnings of light, adopt grating and detector array to be coupled and with optical fiber and waveguide-coupled, coupling efficiency is lower; The photoelectric device of integrated a plurality of separations silica-based, difficulty is bigger.Some adopt flexible PCB; Surface Mount laser array and detector array on the flexible PCB of bending; See through lens with optical fiber and laser instrument and detector coupling; This kind method requires the design of high speed flexible PCB on the one hand, the reliability problems that stress brings in the routing of spun gold pressure welding on flexible PCB on the other hand.
Summary of the invention
To what exist in the prior art: adopt grating and detector array to be coupled and with optical fiber and waveguide-coupled, coupling efficiency is lower, the photoelectric device of integrated a plurality of separations silica-based, difficulty is bigger; Surface Mount laser array and detector array on the flexible PCB of bending; See through lens with optical fiber and laser instrument and detector coupling; This kind method requires the design of high speed flexible PCB on the one hand, the reliability problems that stress brings in the routing of spun gold pressure welding on flexible PCB on the other hand.
The present invention adopts the wafer-level packaging technology, on wafer, forms pit through lithographic technique, and transmitting terminal catoptron, the receiving end catoptron that will be used to turn to be embedded in the wafer; Realize the coupling between laser instrument and waveguide and detector and the waveguide, the method is simplified Coupling Design with the passive coupling technology; Improve coupling efficiency; Use wafer-level packaging technology reduces the cost, and helps quickening the conversion of the present invention to product.
The present invention provides a kind of manufacturing approach of QSFP modular sub-units, and it comprises following steps:
Step 1 pre-fixes transmitting terminal catoptron 202 and receiving end catoptron 203 on daughter board 201, and the surface that has reflecting surface in transmitting terminal catoptron 202, the receiving end catoptron 203 contacts with daughter board 201; Said daughter board 201 is silicon chip wafer or glass wafer;
Step 2, etching forms pit 206 and pit 207 on motherboard 204, and the length of said pit 206 is all greater than the length of transmitting terminal catoptron 202, and the length of said pit 207 is all greater than the length of receiving terminal catoptron 203; The position distribution of said pit 206, pit 207 is corresponding with the position distribution of transmitting terminal catoptron 202, receiving end catoptron 203; Said motherboard 204 is silicon chip wafer or glass wafer;
Step 3; Inwall bottom surface at pit 206 and pit 207 applies fixed bed 205; Said fixed bed 205 is used for transmitting terminal catoptron 202 and receiving end catoptron 203 are fixed on pit 206 and pit 207 on the motherboard 204, and transmitting terminal catoptron 202 and receiving end catoptron 203 are transferred in pit 206 and the pit 207;
Step 4 is protected in the place that does not need etching through mask plate, and whole etching forms light waveguide-layer 304.
Etching in the said step 2 can be used dry method or two kinds of etching modes of wet etching; The reflecting surface of the geometric center of said light waveguide-layer 304 and transmitting terminal catoptron 202 and receiving end catoptron 203 is aimed at.Also can after the light waveguide-layer 304 that step 4 formation needs, carry out step 2 and step 3 then among the present invention.
Preferably, the present invention also further comprises step 5, on motherboard 204, is forming being electrically connected pad 305 and being electrically connected circuit of laser array, detector array through electroplating earlier, and then etching is used for optical fiber align and fixing V-type groove 106.
Preferably, the present invention also further comprises step 6, Surface Mount detector and laser instrument, and section forms corresponding QSFP modular sub-units then.
Beneficial effect of the present invention is: the manufacturing approach of QSFP module has been compared following advantage in manufacturing approach of the present invention and the prior art.At first, the present invention has broken away from the constraint of labyrinth such as the assembling, aligning, encapsulation of traditional discrete device, stands in the angle of encapsulation, and device is integrated, and technology is simple, and coupling efficiency is high.The second, directly utilize the wafer-level packaging technology to form the QSFP module, the QSFP module is accomplished for the base material manufacturing with silicon, can be mass-produced, price is relatively cheap.The 3rd, the present invention goes for the manufacturing of the modular unit of the manufacturing of QSFP module and parallel transmission under 40Gbps and the 100Gbps speed standard, in the high-speed transfer field important application is arranged.
Description of drawings
Fig. 1 is the synoptic diagram of single silica-based QSFP modular sub-units;
Fig. 2 a to Fig. 2 c is the section of structure that laser instrument shifts, fixes, aims at;
Fig. 3 a to Fig. 3 c is the vertical view of QSFP module base unit among the present invention.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Fig. 1 is the synoptic diagram of single silica-based QSFP module base unit, wherein:
The silica-based optical platform of 101-, the silicon substrate of promptly single QSFP modular sub-units;
304-light waveguide-layer, this optical waveguide material can be silicon dioxide, silicon nitride, silicon, can be transparent organic materials also, but be not limited thereto;
202-transmitting terminal catoptron is embedded in the silica-based optical platform;
The 305-pad is used to be electrically connected;
204-receiving end catoptron is embedded in the silica-based optical platform;
106-V type groove 106 is used for optical fiber and fixes.
The present invention provides a kind of manufacturing approach of QSFP module, and Fig. 2 a to Fig. 3 c is a QSFP module base unit manufacturing process synoptic diagram constructed in accordance, and it comprises following steps:
Step 1; Shown in Fig. 2 a; On daughter board 201, transmitting terminal catoptron 202 and receiving end catoptron 203 pre-fixed that (what laser array and detector array space length were tried one's best when distance guaranteed coupling is little; But do not influence installation), transmitting terminal catoptron 202, receiving end catoptron 203 (in have a reflecting surface the surface contact with daughter board 201; Said daughter board 201 is the silicon chip wafer.
Step 2; Shown in Fig. 2 b; Utilize dry method or wet etching; Etching forms pit 206 and pit 207 on motherboard 204, and the length of said pit 206 is all greater than the length of transmitting terminal catoptron 202, and the length of said pit 207 is all greater than the length of receiving terminal catoptron 203; The position distribution of said pit 206, pit 207 is corresponding with the position distribution of transmitting terminal catoptron 202, receiving end catoptron 203.
Step 3; Shown in Fig. 2 c; Inwall bottom surface at pit 206 and pit 207 applies fixed bed 205; Said fixed bed 205 is used for transmitting terminal catoptron 202 and receiving end catoptron 203 are fixed on pit 206 and pit 207 on the motherboard 204, and transmitting terminal catoptron 202 and receiving end catoptron 203 are transferred in pit 206 and the pit 207.The material of said fixed bed 205 generally is a glue, the silver slurry, but be not limited thereto.Step 4 shown in Fig. 3 b, through etching technics, forms light waveguide-layer 304.The reflecting surface of the geometric center of said light waveguide-layer 304 and transmitting terminal catoptron 202 and receiving end catoptron 203 is aimed at.
Also can after the light waveguide-layer 304 that step 4 formation needs, carry out step 2 and step 3 then.
Step 5; Shown in Fig. 3 c, through electroplate on motherboard 204, form detector array, laser array be electrically connected pad 305, be electrically connected pad 305 and be used for fixing detector array, laser array; Provide the electric wiring that is electrically connected and is electrically connected pad 305 not mark simultaneously.Etching is used for optical fiber and waveguide-coupled aligning and fixing V-type groove array 106 on motherboard 204.
Step 6, Surface Mount detector and laser instrument on motherboard 204, section forms corresponding QSFP modular sub-units.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention
Claims (8)
1. the manufacturing approach of a QSFP modular sub-units, it comprises following steps:
Step 1 upward pre-fixes transmitting terminal catoptron (202) and receiving end catoptron (203) at daughter board (201), and the surface that has reflecting surface in transmitting terminal catoptron (202), the receiving end catoptron (203) contacts with daughter board (201);
Step 2; Go up etching at motherboard (204) and form first pit (206) and second pit (207); The length of said first pit (206) is all greater than the length of transmitting terminal catoptron (202), and the length of said second pit (207) is all greater than the length of receiving end catoptron (203); The position distribution of said first pit (206), second pit (207) is corresponding with the position distribution of transmitting terminal catoptron (202), receiving end catoptron (203);
Step 3; Inwall bottom surface at first pit (206) and second pit (207) applies fixed bed (205); Said fixed bed (205) is used for transmitting terminal catoptron (202) and receiving end catoptron (203) are fixed on first pit (206) and second pit (207) on the motherboard (204), and transmitting terminal catoptron (202) and receiving end catoptron (203) are transferred in first pit (206) and second pit (207);
Step 4 is protected in the place that does not need etching through mask plate, and whole etching forms light waveguide-layer (304).
2. the manufacturing approach of QSFP modular sub-units as claimed in claim 1 is characterized in that said daughter board (201) is silicon chip wafer or glass wafer.
3. the manufacturing approach of QSFP modular sub-units as claimed in claim 1 is characterized in that said motherboard (204) is silicon chip wafer or glass wafer.
4. the manufacturing approach of QSFP modular sub-units as claimed in claim 1 is characterized in that the etching in the said step 2 is dry etching or wet etching.
5. the manufacturing approach of QSFP modular sub-units as claimed in claim 4 is characterized in that the geometric center of said light waveguide-layer (304) and the reflecting surface aligning of transmitting terminal catoptron (202) and receiving end catoptron (203); Transmitting terminal catoptron (202) reflecting surface, receiving end catoptron (203) reflecting surface and laser array light-emitting area, detector array sensitive surface are aimed at.
6. the manufacturing approach of QSFP modular sub-units as claimed in claim 1 is characterized in that: step 2,3,4 is for carry out or behind completing steps 4, carry out step 2 and step 3 in proper order.
7. like the manufacturing approach of claim 1 or 6 described QSFP modular sub-units, it is characterized in that also further comprising:
Step 5, through electroplating the pad that is electrically connected (305) that forms laser array, detector array and being electrically connected circuit, etching is used for the V-type groove (106) that optical fiber is coupled and aligned and fixes then.
8. the manufacturing approach of QSFP modular sub-units as claimed in claim 7 is characterized in that also further comprising:
Step 6 goes up Surface Mount detector array and laser array at motherboard (204), and section forms corresponding QSFP modular sub-units.
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US8249450B2 (en) | 2008-10-14 | 2012-08-21 | Corning Cable Systems Llc | Methods of port mapping in fiber optic network devices |
US9097873B2 (en) | 2010-04-14 | 2015-08-04 | Corning Cable Systems Llc | Port mapping in fiber optic network devices |
US9097874B2 (en) | 2012-07-25 | 2015-08-04 | Corning Optical Communications LLC | Polarity configurations for parallel optics data transmission, and related apparatuses, components, systems, and methods |
US9057863B2 (en) | 2012-07-25 | 2015-06-16 | Corning Cable Systems Llc | Polarity scheme for parallel-optics data transmission |
CN105140215B (en) * | 2015-06-26 | 2018-09-21 | 湖南晶图科技有限公司 | A kind of wafer-level packaging method coupled with photoelectric device for PLC planar waveguide chips |
CN105607191A (en) * | 2016-03-21 | 2016-05-25 | 中国科学院半导体研究所 | Manufacturing method of time-division wavelength division multiplexing passive optical network terminal transmit-receive integrated chip |
CN106405754B (en) * | 2016-11-25 | 2018-01-16 | 华进半导体封装先导技术研发中心有限公司 | A kind of structure stand of optical fiber module and preparation method thereof |
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CN1797052A (en) * | 2004-12-28 | 2006-07-05 | 日立电线株式会社 | Optical transceiver |
CN201259972Y (en) * | 2008-06-12 | 2009-06-17 | 佳必琪国际股份有限公司 | Four channel micro pluggable transceiving module case construction |
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US6792178B1 (en) * | 2000-01-12 | 2004-09-14 | Finisar Corporation | Fiber optic header with integrated power monitor |
CN1797052A (en) * | 2004-12-28 | 2006-07-05 | 日立电线株式会社 | Optical transceiver |
CN201259972Y (en) * | 2008-06-12 | 2009-06-17 | 佳必琪国际股份有限公司 | Four channel micro pluggable transceiving module case construction |
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Effective date of registration: 20210220 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: No.9, East 3rd Wuke Road, Wuhou District, Chengdu, Sichuan 610000 Patentee before: CHENGDU RUIHUA OPTICS Co.,Ltd. |