CN104317070A - Silicon-based electro-optic modulator including vertical optical fiber coupling interface with polarization diversity - Google Patents
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- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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Abstract
The invention discloses a (SOI) silicon-based electro-optic modulator including a vertical optical fiber coupling interface with polarization diversity, and the modulator comprises a four-channel two-dimensional grating coupler to realize polarization diversity optical coupling, namely double-polarization (P1, P2) incident lights in a single-mode optical fiber are coupled and polarized and beamed into the four-channel single-mode waveguide to transmit the TE polarization mode in single mode. Three MMI couplers are used as optical beam combiners and used to respectively beam two pairs of channel waveguides and two single-mode waveguide optics with radio frequency phase shifters. Two radio frequency phase shifters are used as an electrical signal input carrier and used to modulate the phases of light beams transmitted in two optical arms through high-speed electrical signals, namely differential modulation of the two optical arms can be realized by only modulating one optical arm, at the same time, a phase shift structure is respectively introduced into the two optical arms to balance optical loss caused by the phase shifter in two-side waveguides so as to promote the performance of the modulator.
Description
Technical field
The present invention relates to silicon based photon and chip-scale light network technology, particularly relate to a kind of silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface.
Background technology
Microelectric technique and Fibre Optical Communication Technology are two large foundation stones of human information society.Nearly half a century, along with the development of integrated circuit, the maturation that silica-base material and device technology are very surprising, and constantly reducing along with technology feature size, the integrated level of integrated circuit also to shoot ahead development according to Moore's Law always.What the integrated level that chip is higher was brought is not only that number of transistors object increases, the lifting of chip functions and processing speed especially.Such as, the transistor size of the 8 core microprocessor Nehalem-EX that the 45nm technique of Intel employing is up-to-date reaches 2,300,000,000.But constantly reduce the continuous increase with integrated level along with characteristic dimension, the limitation of microelectronic technique also becomes clear day by day.Be the continuous reduction due to bandwidth on the one hand, traditional lithography process means, close to the limit, in addition, when device size is close to nanoscale, will be introduced the quantum physics effect that can not expect, thus cause component failure.On the other hand that time delay and the power consumption of single transistor are more and more less owing to synchronously reducing along with transistor size and interconnection line size, and the time delay of interconnection line and power consumption increasing and occupy leading gradually.In current processor, the power consumption that electrical interconnection causes account for more than 80% of whole chip total power consumption.Therefore, can see that electrical interconnection under deep-submicron characteristic dimension postpones and the bottleneck of power consumption, seriously constrain the further raising of chip performance.On-chip interconnect is in the urgent need to a kind of interconnection mode than electrical interconnection more broadband more at a high speed.
Compare microelectric technique, although Fibre Optical Communication Technology is started late, its speed of development is abnormal surprising.Optical fiber communication has the advantages such as loss is low, bandwidth, capacity large, electromagnetism interference, therefore enjoys and favors in the industry.From 1980 to 2000 20 years, the transmission capacity of optical fiber telecommunications system adds 10,000 times, and transmission speed improves about 100 times, brings the high speed information carrier of an infinite bandwidth to the mankind.Certainly, light network advantage in long haul communication is obvious, also application widely and success is achieved, so can people's imagination be incorporated into the bottleneck that chip-scale solves electrical interconnection on sheet by light network? make a general survey of nearly ten years, communication mode is from traditional electrical interconnection to light network transition progressively, in short-distance and medium-distance communication, although be at present electrical interconnection be main, light network has had the trend of progressively permeating.The field that current light network not yet sets foot in is exactly the communication between sheet and in sheet.From two kinds of interconnection modes comparatively speaking, light network has obvious advantage, its high bandwidth, low energy consumption, delay advantage that is little, electromagnetism interference be in chip copper interconnecting line incomparable.Therefore, studying the photon technology of chip-scale and make it compatible with the silicon CMOS technology that maturation is cheap the most in the world, with the performance bottleneck solving microelectronic chip, there is very important meaning and value for realizing light network on sheet.
In recent years, SOI material is because its strong light limitation capability and silicon are in the transparent characteristic of optical communicating waveband, become the silicon photon technology platform of a very attractive, and develop very rapid, many relevant achievements are in succession suggested and verify, the appearance of grating coupler, MZI modulator, micro-ring modulator, germanium waveguide photodetector, multiplexing and demultiplexing device etc. also seems to have declared an era of photonics at hand.But, challenge and difficulty are also huge, a maximum difficult problem be lack chip-scale can silica-based light source, because silicon is indirect bandgap semiconductor material, making light source with silicon materials is almost impossible mission, proposing more scheme at present is in the world adopt bonding III-VI race's laser instrument and silicon waveguide-coupled, and recently, the laser instrument about silica-based upper mixed growth III-VI race material allows people more expect for the arrival of era of photonics especially.Just because the potential huge applications of silicon photon technology is worth and prospect, countries in the world all give enough attention and input, particularly the compunication industry giant such as Luxtera, Intel, IBM has dropped into huge manpower, material resources and financial resources, also many important progress are achieved, the photon connected system of the monolithic optical transceiver module of Luxtera, the 50Gb/s of Intel, the integrated silicon-based nano-photon technology of CMOS etc. of IBM open new era of silicon based opto-electronics function i ntegration, have also promoted the development of silicon based photon greatly.Can predict, in following decades, the progress and development that welcome breakthrough type are also obtained widespread use by silicon photon technology gradually.
Grating coupler is a kind of very important silicon based optoelectronic devices, it is widely used in the optically-coupled of single-mode fiber and the sub-chip of silicon based opto-electronics, have alignment tolerance ability strong, without the need to end face polishing, be easy to the advantages such as On-wafer measurement, cause people in the last few years and study interest widely.For traditional grating coupler, in order to avoid stronger secondary reflection, usually need optical fiber offset from perpendicular inclination angle, this can bring two shortcomings: need during the first On-wafer measurement to carry out tuning to the angle of optical fiber, very time-consuming.Second needs when encapsulating optical fiber to use angle polishing technique usually, and this can make the packaging cost of chip greatly improve.Therefore, a high efficiency complete vertical fiber coupling interface can bring a lot of facility.In addition, because one-dimensional grating coupling mechanism is a strong polarization related device, only allow a kind of optically-coupled of linear polarization to enter under normal circumstances, therefore Polarization Dependent Loss is very large; And the polarization state in single-mode fiber is elliptical polarization mostly, simultaneously due to the imperfection of optical fiber, the polarization state in optical fiber also is constantly occurring to change.Therefore, when utilizing one-dimensional grating to be coupled, in order to keep the good alignment of the stable and guarantee polarization state of polarization state in optical fiber, usually need in leading portion link, to insert Polarization Controller while of using polarization maintaining optical fibre to carry out incident to control the polarization state in optical fiber, thus ensure best coupling efficiency.This makes the test of chip become the complicated a lot of practical applications simultaneously limiting chip undoubtedly.Therefore, the Polarization Dependent Loss that the coupling how realizing polarization diversity reduces optical coupled interface is simultaneously an important topic.Two-dimensional grating coupling mechanism is a kind of device that can realize polarization diversity coupling, namely two mutually orthogonal polarization states in optical fiber all can be coupled into different chip waveguide and propagate with class TE polarization mode.Although the ratio that two orthogonal polarisation state are coupled into waveguide in both direction can change along with the change of polarization state, but the general power be coupled in two orthogonal directions waveguides does not change with the change of polarization state.The present invention adopts a four-way two-dimensional grating coupling mechanism as the vertical coupled optics interface of chip and single-mode fiber, complete four road light beam splitting simultaneously, by MMI bundling device, optics is carried out in the orthogonal waveguide of two couples of grating pair linea angulata both sides and close bundle, the luminous power polarization within the scope of certain polarization state after closing bundle so both can have been made to have nothing to do, maintain simultaneously two side waveguide close bundle after intensity balancing simultaneously phase place is consistent thus meet coherent condition.And then introduce radio frequency phase-shifter and just constitute two optical phase shift arms in waveguide after two-way closes bundle, can carry out phase-modulation by external high-frequency electric signal to the light in optical arm makes the light in two-way waveguide completely anti-phase, carries out conjunction bundle more afterwards just constitute a light intensity electrooptic modulator by an optics bundling device.By the design, both imparted the vertical optical coupling interface of an electrooptic modulator polarization diversity, and greatly reduced again the Polarization Dependent Loss of device simultaneously, therefore there is practical significance and potential using value.
Summary of the invention
The object of the present invention is to provide a kind of electrooptic modulator with polarization diversity vertical fiber coupling interface, the advantages such as this device has coupling modulation function integration, be easy to carry out optical fiber align, Polarization Dependent Loss is less, its manufacture craft is completely mutually compatible with CMOS technology in addition.
The invention provides a kind of silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface, comprising: a four-way two-dimensional grating coupling mechanism, in order to realize the optically-coupled of polarization diversity, also namely can by dual-polarization state (P in single-mode fiber
1, P
2) incident light to be all coupled and polarization beam splitting enters in four passage single mode waveguides with class TE polarization mode single mode transport.
Three MMI coupling mechanisms, use as optics bundling device, close bundle respectively in order to passage single mode waveguide, passage single mode waveguide and the optics with two single mode waveguides of radio frequency phase-shifter.
Two radio frequency phase-shifters, as the input carrier of electric signal, in order to carry out phase-modulation by electrical signal at a high speed to the light beam propagated in single mode waveguide, both only can modulate one of them optical arm and also can carry out differential modulation to two optical arms simultaneously, simultaneously by all introducing phase-shift structure in two optical arms, can balance due to the light loss that phase-shifter causes in two side waveguide, and then promote the performance of modulator.
From analysis above, the coupling function that this device can complete polarization diversity realizes electrooptical modulation at a high speed simultaneously, connect at device end the monolithic point-to-point light network that germanium waveguide photodetector just can realize electricity input, optical transport, electricity output, be expected to obtain important application in light network/optical communication network on the sheet in future.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and the present invention is described in more detail with reference to accompanying drawing, wherein:
Fig. 1 is specific embodiments of the invention structural principle schematic diagram
Fig. 2 is specific embodiments of the invention two-dimensional grating spatial structure and schematic cross-section
Fig. 3 is specific embodiments of the invention radio frequency phase-shifter schematic cross-section
Embodiment
Due to the device that the present invention is based on SOI substrate design of material, for different oxygen buried layer thickness and top layer silicon thickness, also different for reaching the corresponding optimal design of functional requirement, therefore conveniently carry out describing, backing material of the present invention is defaulted as specifically implements parameter, namely oxygen buried layer thickness is 2 μm, and top layer silicon thickness is 220nm.
Fig. 1 is specific embodiments of the invention device architecture principle schematic, consults this figure visible, the invention provides a kind of silicon-based electro-optical modulator with polarization diversity vertical optical interface, comprising:
A four-way two-dimensional grating coupling mechanism 1, in order to realize the optically-coupled of polarization diversity, also namely can by dual-polarization state (P in single-mode fiber
1, P
2) incident light to be all coupled and polarization beam splitting enters in four passage single mode waveguides 2,3,4,5 with class TE polarization mode single mode transport.
Three MMI coupling mechanisms 6, use as optics bundling device, close bundle respectively in order to passage single mode waveguide 3 and 4, passage single mode waveguide 2 and 5 and the optics with two single mode waveguides 8 and 9 of radio frequency phase-shifter 7.
Two radio frequency phase-shifters 7, as the input carrier of electric signal, in order to carry out phase-modulation by electrical signal at a high speed to the light beam propagated in single mode waveguide 8 and 9, both only can modulate one of them optical arm and also can carry out differential modulation to two optical arms simultaneously, simultaneously by all introducing phase-shift structure in two optical arms, can balance due to the light loss that phase-shifter causes in two side waveguide, and then guarantee the equilibrium of luminous power in modulator two optical arm.
The described silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface, wherein adopt four-way two-dimensional grating coupling mechanism 1 as the vertical coupled optics interface of electrooptic modulator chip and single-mode fiber, when single-mode fiber and chip surface are completely vertical and when being in grating region center, the light P of dual-polarization mould in optical fiber
1and P
2all can be coupled into and enter four channel waveguides by polarization beam splitting with different ratios simultaneously and carry out class TE polarization state single mode transport.
The described silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface, two MMI bundling devices 6 are wherein adopted respectively the light propagated in passage single mode waveguide 3 and 4 and passage single mode waveguide 2 and 5 to be carried out conjunction bundle, due to symmetry, when optical fiber completely vertical and in alignment with grating pair linea angulata center time, although P
1, P
2the optically-coupled of polarization state enters the component of x direction channel waveguide (2 and 4) and y direction channel waveguide (3 and 5) and unequal and can change along with the change of input polarization, however equidirectional channel waveguide (2 and 4,3 and 5) interior lights component intensity and phase place completely the same.Therefore, certain consistent with after the combiner in channel waveguide 3 and 4 after the combiner in channel waveguide 2 and 5.Therefore, no matter input light polarization state and how to change, all can ensure that single mode waveguide 8 and the luminous power in 9 are balanced and phase place is consistent meets coherent condition, realize modulation function by interferometer structure below.
The described silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface, wherein adopt two radio frequency phase-shifters 7, for carrying out phase-modulation to the light in single mode waveguide 8 and 9, make the phase place just in time phase difference of pi of two ways of optical signals, now, two ways of optical signals is closed after bundle through optics and is interfered and disappear mutually, and the light output of respective devices is low.When radio frequency phase-shifter does not power up, the complete same-phase of two ways of optical signals is closed beam interferometer through optics and is strengthened, and the light output of respective devices is high.When high-speed electrical signals is carried on radio frequency phase-shifter 7, the light output of device switches fast along with the change of electric signal between high (corresponding to logic level " 1 ") and low (corresponding to logic level " 0 "), thus realize the function of electrooptical modulation, be also modulated on light carrier by rf signal and transmit.
Fig. 2 display be the structural representation of two-dimensional grating in the specific embodiment of the invention.Wherein Fig. 2 (a) is the schematic perspective view of two-dimensional grating structure, and Fig. 2 (b) is two-dimensional grating structure A-A ' tangent line place schematic cross-section.As we can see from the figure, the two-dimensional grating structure that we adopt is a two-dimensional grating symmetrically, namely also two-dimensional grating planar two dimensions is uniform period structure and has identical dutycycle, so, grating is full symmetric in two dimensions, this also cause when incident optical and chip completely vertical and be just in time in grating region center time, the coupled characteristic of grating in two dimensions should be completely the same, also namely for two orthogonal polarization state lights in optical fiber, its coupling efficiency curve be coupled into respectively in two dimensions in waveguide should be completely the same.The coupling condition of grating when we consider the different incoming polarization state of optical fiber now.First consider according to polarization maintaining optical fibre, then what propagate in optical fiber can be the light of linear polarization.If incoming polarization state is as the P in Fig. 1
2namely polarization direction is in one or three quadrants of grating planar, then decompose according to polarization vector and can know that the polarized component being coupled into waveguide 2 and waveguide 5 (or waveguide 3 and waveguide 4) is same-phase, now close after bundle through back-end optical and interfere enhancing, although the change in incident polarization direction can affect the component be coupled in two orthogonal waveguides, but the total coupled power in two waveguides does not change thereupon.Therefore, as long as polarization state direction changes in one or three quadrants, the insertion loss of device does not change, and also namely the Polarization Dependent Loss of device is close to is 0.If incoming polarization state is as P in Fig. 1
1when being namely in two four-quadrant of grating planar, this time asymmetrically can be coupled into waveguide 2 and waveguide 5 (or waveguide 3 and waveguide 4), also namely can introduce a π difference between the polarized component in two waveguides.Now when waveguide 2 and waveguide 5 full symmetric isometric, two polarized components can be interfered when closing bundle and be disappeared mutually.Work as P
1when being just in time in two four-quadrant diagonal positions, polarized component constant amplitude corresponding in now waveguide 2 and waveguide 5 is anti-phase, interferes phase delustring to go to zero by force after now closing bundle in theory completely.As can be seen here, if we consider the optics input of dual-polarization state: work as P
1, P
2when polarization direction lays respectively at coordinate axis-x direction and y direction, P
1the optically-coupled of polarization state enters waveguide 3 and waveguide 5, and P
2the optically-coupled of polarization state enters waveguide 2 and waveguide 4, and waveguide 2 will disappear mutually with the light in waveguide 5 (waveguide 3 and waveguide 4) is anti-phase after conjunction bundle in interference, and now the optical transport of device is 0 in theory, and insertion loss reaches the highest; Work as P
1, P
2when polarization direction lays respectively at the diagonal positions of two four-quadrants and one or three quadrants, only P
2the light of polarization state can be coupled into chip and after optics closes bundle, interfere enhancing to be continued transmission; Work as P
1, P
2when polarization direction lays respectively at coordinate axis y direction and x direction, P
1the optically-coupled of polarization state enters waveguide 2 and waveguide 4, and P
2the optically-coupled of polarization state enters waveguide 3 and waveguide 5, and the light being coupled into waveguide 2 and waveguide 5 (or waveguide 3 and waveguide 4) is same-phase, and now the optical transport of device reaches maximum in theory, and the Insertion Loss of device reaches minimum.In sum, device only can the irrelevant work of polarization when incident light is within the scope of certain linear polarization, and namely when input polarization is positioned at grating planar one or three quadrant, the insertion loss of device changes with the change of input polarization hardly.Shown in Fig. 2 (b) is the schematic cross-section of two-dimensional grating coupled apparatus on A-A ' tangent line.Due to the two-dimensional symmetric of grating, we only give the schematic cross-section on a direction here.Can see, when optical fiber and chip cross-section are completely vertical and when being in grating region center, the light meeting the corresponding polarization state of coupling condition can be coupled into chip and symmetric splitting enters waveguide 2 and waveguide 4 with class TE mode propagation.By carefully designing the feature physical parameter of grating as grating period A, grating dutycycle FF (=W/ Λ) and the etching depth of grating d etc., the optimization of grating coupling efficiency and the tuning of 3-dB bandwidth just can be realized.
The radio frequency phase-shifter schematic diagram that specific embodiment in this device shown in Fig. 3 adopts.Can see we adopted in a particular embodiment be radio frequency phase-shifter based on depletion type PN junction phase-shift structure.Because the intrinsic bandwidth of the PN junction phase-shifter extracted fast based on charge carrier is very high, therefore adopt the phase-shifter of depletion type PN can realize the electrooptic modulator of higher bandwidth.In addition, adopt co-planar waveguide traveling wave electrode can realize the row ripple work of modulator, effectively avoid modulator bandwidth to be subject to the impact of lump RC time delay, thus greatly improve the bandwidth of device.By introducing this radio frequency phase-shift structure in the waveguide after two are closed bundle, just can carry out phase-modulation to the light in one of them waveguide or deferential phase modulation be carried out to two-arm simultaneously, and then anti-phase the interference at output terminal of the light in two waveguides is disappeared, mutually so just can realize the optical modulations of OOK.
Above-described specific embodiment; more detailed specific description has been carried out to object of the present invention, technical scheme and beneficial effect; be understood that; above-describedly be only specific embodiments of the invention; be not limited to the present invention; all in spirit of the present invention, thought and spirit, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. there is the silicon-based electro-optical modulator of polarization diversity vertical fiber coupling interface, comprising:
A four-way two-dimensional grating coupling mechanism 1, in order to realize the optically-coupled of polarization diversity, also namely can by dual-polarization state (P in single-mode fiber
1, P
2) incident light to be all coupled and polarization beam splitting enters in four passage single mode waveguides 2,3,4,5 with class TE polarization mode single mode transport;
Three MMI coupling mechanisms 6, use as optics bundling device, close bundle respectively in order to passage single mode waveguide 3 and 4, passage single mode waveguide 2 and 5 and the optics with two single mode waveguides 8 and 9 of radio frequency phase-shifter 7;
Two radio frequency phase-shifters 7, as the input carrier of electric signal, in order to carry out phase-modulation by electrical signal at a high speed to the light beam propagated in single mode waveguide 8 and 9, both only can modulate one of them optical arm and also can carry out differential modulation to two optical arms simultaneously, simultaneously by all introducing phase-shift structure in two optical arms, can balance due to the light loss that phase-shifter causes in two side waveguide, and then promote the performance of modulator.
2. the silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface according to claim 1, wherein adopt four-way two-dimensional grating coupling mechanism 1 as the vertical coupled optics interface of electrooptic modulator chip and single-mode fiber, when single-mode fiber and chip surface are completely vertical and when being in grating region center, the light P of dual-polarization mould in optical fiber
1and P
2all can be coupled into and enter four channel waveguides by polarization beam splitting with different ratios simultaneously and carry out class TE polarization state single mode transport.
3. the silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface according to claim 1, two MMI bundling devices 6 are wherein adopted respectively the light propagated in passage single mode waveguide 3 and 4 and passage single mode waveguide 2 and 5 to be carried out conjunction bundle, due to symmetry, when optical fiber completely vertical and in alignment with grating pair linea angulata center time, although P
1, P
2the optically-coupled of polarization state enters the component of x direction channel waveguide (2 and 4) and y direction channel waveguide (3 profit 5) and unequal and can change along with the change of input polarization, however equidirectional channel waveguide (2 and 4,3 and 5) interior lights component intensity and phase place completely the same; Therefore, certain consistent with after the combiner in channel waveguide 3 and 4 after the combiner in channel waveguide 2 and 5; Therefore, no matter input light polarization state and how to change, all can ensure that single mode waveguide 8 and the luminous power in 9 are balanced and phase place is consistent meets coherent condition, realize modulation function by interferometer structure below.
4. the silicon-based electro-optical modulator with polarization diversity vertical fiber coupling interface according to claim 1, wherein adopt two radio frequency phase-shifters 7, for carrying out phase-modulation to the light in single mode waveguide 8 and 9, make the phase place just in time phase difference of pi of two ways of optical signals, now, two ways of optical signals is closed after bundle through optics and is interfered and disappear mutually, and the light output of respective devices is low; When radio frequency phase-shifter does not power up, the complete same-phase of two ways of optical signals is closed beam interferometer through optics and is strengthened, and the light output of respective devices is high; When high-speed electrical signals is carried on radio frequency phase-shifter 7, the light output of device switches fast along with the change of electric signal between high (corresponding to logic level " 1 ") and low (corresponding to logic level " 0 "), thus realizes the function of electrooptical modulation.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107884876A (en) * | 2017-12-23 | 2018-04-06 | 长安大学 | A kind of polarization state detection chip based on Waveguide grating coupler |
| CN112946930A (en) * | 2021-03-19 | 2021-06-11 | 苏州微光电子融合技术研究院有限公司 | Polarization-independent electro-optic modulator based on two-dimensional grating coupling |
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