CN103513333A - Blended crossing device for silicon-based nanowire - Google Patents
Blended crossing device for silicon-based nanowire Download PDFInfo
- Publication number
- CN103513333A CN103513333A CN201310512245.8A CN201310512245A CN103513333A CN 103513333 A CN103513333 A CN 103513333A CN 201310512245 A CN201310512245 A CN 201310512245A CN 103513333 A CN103513333 A CN 103513333A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- mode
- slab
- angled intersection
- wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a blended crossing device for a silicon-based nanowire. The crossing device comprises two groove waveguide mode switching units, two slab waveguide mode switching units, a sine switching waveguide and a crossing multimode waveguide, wherein the two groove waveguide mode switching units and the two slab waveguide mode switching units are respectively connected through the sine switching waveguide and the crossing multimode waveguide, each groove waveguide mode switching unit is opposite to one slab waveguide mode switching unit, each groove waveguide mode switching unit comprises a groove waveguide for inputting an optical signal and a mode switcher, each mode switcher is connected between each groove waveguide and the sine switching waveguide, each slab waveguide mode switching unit comprises a slab waveguide and a single-mode waveguide for outputting the optical signal, and each single-mode waveguide is connected between each slab waveguide and the sine switching waveguide. The crossing device has the advantages of high transmission efficiency, compact structure, low loss, low manufacturing difficulty, relatively low cost and the like.
Description
Technical field
The invention belongs to integrated photonics technical field, specifically, relate to a kind of silica-based nanowire mixing right-angled intersection device.
Background technology
Waveguide interleaver, as the class function element in photon integrated circuit, has important effect aspect the integrated level of signal route and raising device.Directly slab guide intersects, and because light field is in the obvious diffraction in center of waveguide intersection, makes loss and crosstalk to greatly increase.Especially for the material of high index-contrast as silicon-on-insulator, loss and crosstalk very seriously, the performance that this has greatly affected waveguide interleaver, has restricted it in the application in integrated optical device field.Therefore, develop the waveguide interleaver that meets application demand, there is the very important meaning.In recent years, researcher, for low-loss, low waveguide interleaver of crosstalking, has carried out a large amount of research.For example adopt the interleaved scheme of mode expansion type, the mould field of waveguide infall is limited in a larger scope to reduce loss and to crosstalk, but the manufacturing process of two etchings has increased the manufacturing cost of device.In addition, use vertical manufacturing process to manufacture waveguide interleaver and can obtain good device performance, but with respect to planar technology, this manufacture method is obviously wanted the many of complexity, manufacturing cost is also relatively high.The loss of the reduction waveguide interleaver that at present although these schemes can be in various degree and crosstalking, improve the performance of device, but manufacture difficulty is all higher, be not suitable for large-scale application, and all strip structure waveguides for single type of cross-over design method, this has greatly limited the range of application of waveguide interleaver.
Slot wave is led the waveguide as a class formation novelty at present, after first the Michal Lipson of 2004 Nian Bei Cornell University professor team puts forward, has received very soon many researchists' concern.The mould field distribution of this waveguide is obviously different from the mould field distribution of slab waveguide, the mould field of slab waveguide is mainly distributed in the sandwich layer of waveguide, and lead for slot wave, according to the boundary relation of electromagnetic field, in the material interface distributing perpendicular to high index-contrast, will there is uncontinuity in electric field component, due to the width of the groove characteristic decay length much smaller than groove both sides slab waveguide, electric field is greatly strengthened in the groove of low-refraction, and corresponding mould field also will concentrate on microflute region.Field enhancement effect based on this uniqueness, many photonic devices are in succession suggested or create, such as: photomodulator, polarization beam apparatus, micro-ring resonator, directional coupler, wavelength division multiplexer, biological/chemical sensor etc.These devices show and the visibly different transport property of slab waveguide device, in order to realize the mutual supplement with each other's advantages of these two kinds of dissimilar waveguide devices, monolithic is integrated will be a good solution, and wherein the application of efficient waveguide interleaver will be conducive to the raising of monolithic integration density.Therefore, design simple in structure, transfer efficiency is high, silica-based nanowire mixing right-angled intersection device easily manufactured, relative low price will be highly significant.
Summary of the invention
Technical matters: technical matters to be solved by this invention is: a kind of silica-based nanowire mixing right-angled intersection device is provided, and this right-angled intersection utensil has the advantages such as transfer efficiency is high, compact conformation, loss is low, manufacture difficulty is low, relative low price.
Technical scheme: for solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of silica-based nanowire mixing right-angled intersection device, this interleaver comprises two slot wave waveguide mode converting units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide and right-angled intersection multimode waveguides, and two slot wave waveguide mode converting units are changed waveguide by sinusoidal pattern respectively with two slab waveguide mode switching units and are connected with right-angled intersection multimode waveguide; Each slot wave waveguide mode converting unit is relative with a slab waveguide mode switching unit; Each slot wave waveguide mode converting unit comprises for the slot wave of light signal input to be led and mode converter, mode converter be connected to that slot wave is led and sinusoidal pattern conversion waveguide between; Each slab waveguide mode switching unit comprises slab waveguide and the single mode waveguide for light signal output, and single mode waveguide is connected between slab waveguide and sinusoidal pattern conversion waveguide.
Beneficial effect: compared with prior art, technical scheme of the present invention has following beneficial effect:
1, transfer efficiency is high, loss is low.Owing to having introduced right-angled intersection multimode waveguide structure at waveguide infall, for existing direct waveguide intersects, this structure can make the width of incident field incident field in waveguide intersection center is converged to reduce multimode waveguide, corresponding reduction due to crosstalking and diffraction loss that waveguide intersection is brought, transfer efficiency also will obviously improve, between this external input waveguide, output waveguide and right-angled intersection multimode waveguide, add corresponding pattern transformational structure for the pattern of efficient conversion different waveguide, can further improve transmission and coupling efficiency.
2, manufacture difficulty is low, reliability is high.The waveguiding structure using in the present invention, as the characteristic dimension of the mode converter of right-angled intersection multimode waveguide, sinusoidal pattern conversion waveguide, logarithmic, single mode waveguide etc. all larger (all in micron or sub-micrometer scale), this is by the requirement of relaxing actual photon device fabrication equipment characteristic dimension, reduce manufacture difficulty, corresponding device reliability also can be guaranteed.
3, can realize the efficient conversion of different waveguide pattern.Because input waveguide pattern is different with output waveguide pattern, two kinds of mode switching units have been added in the present invention, respectively slot wave waveguide mode converting unit and slab waveguide mode switching unit, and reflection loss and the end face coupling loss of sinusoidal pattern transformed wave guide structure in order to reduce to bring due to different waveguide direct-coupling, improve mode conversion efficiency.
4, compact conformation, easy to make, with low cost.The present invention, owing to having adopted the silicon-on-insulator material of high index-contrast, makes device one-piece construction have higher compactedness.Silica-based nanowire waveguiding structure material is cheap, and compatible, easy to make with ripe CMOS processing technology, can realize silicon-based monolithic integrated, in integrated photonics field, has huge development potentiality.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the principal component mould field pattern of the accurate transverse electric mode of bar shaped waveguiding structure in the present invention.
Fig. 3 is the principal component mould field pattern of the accurate transverse electric mode of middle slot waveguiding structure of the present invention.
Fig. 4 is the structural representation of mode converter in the present invention.
Fig. 5 is the variation relation of mode converter transfer efficiency and its first length in the present invention.
Fig. 6 is the variation relation of mode converter transfer efficiency and its second length in the present invention.
Fig. 7 is the variation relation of mode converter transfer efficiency and operation wavelength in the present invention.
Fig. 8 is the transmission mode field pattern of mode converter in the present invention.
Fig. 9 is transmission mode field pattern of the present invention, and wherein, horizontal ordinate represents the size that device is horizontal, unit: micron (μ m); Ordinate represents the size of device transmission direction, unit: micron (μ m).
Figure 10 has provided the transmission mode field pattern of the first slab waveguide structure, and wherein, horizontal ordinate represents the size that device is horizontal, unit: micron (μ m); Ordinate represents the size of device transmission direction, unit: micron (μ m).
Figure 11 has provided the transmission mode field pattern of the second slab waveguide structure, and wherein, horizontal ordinate represents the size that device is horizontal, unit: micron (μ m); Ordinate represents the size of device transmission direction, unit: micron (μ m).
In figure, have: slot wave leads 1, slab waveguide 2, right-angled intersection multimode waveguide 3, single mode waveguide 4, mode converter 5, sinusoidal pattern conversion waveguide 6.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of silica-based nanowire mixing right-angled intersection device of the present invention, comprises two slot wave waveguide mode converting units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide 6 and right-angled intersection multimode waveguides 3.Two slot wave waveguide mode converting units are changed waveguide 6 by sinusoidal pattern respectively with two slab waveguide mode switching units and are connected with right-angled intersection multimode waveguide 3.Each slot wave waveguide mode converting unit is relative with a slab waveguide mode switching unit.Each slot wave waveguide mode converting unit comprises for the slot wave of light signal input leads 1 and mode converter 5, mode converter 5 be connected to slot wave lead 1 and sinusoidal pattern conversion waveguide 6 between.Each slab waveguide mode switching unit comprises slab waveguide 2 and the single mode waveguide 4 for light signal output.Single mode waveguide 8 is connected between slab waveguide 2 and sinusoidal pattern conversion waveguide 6.
The transmission feature of light signal in the mixing right-angled intersection device of said structure is as follows: incident optical signal is led 1 input from slot wave, through mode converter 5, change the pattern of slab waveguide adiabaticly into, enter sinusoidal pattern conversion waveguide 6 and right-angled intersection multimode waveguide 3 and motivate a plurality of mode producing multiple-mode interfence phenomenons.Based on multiple-mode interfence from mirror effect, the light field of incoming signal will converge again from image length place, selecting the length of right-angled intersection multimode waveguide 3 is the twice from image length, makes light field just in the intersection center of right-angled intersection multimode waveguide 3, converge to reduce to intersect crosstalking and diffraction loss of bringing.When light field is exported from right-angled intersection multimode waveguide 3, enter sinusoidal pattern conversion waveguide 6 and single mode waveguide 4, and finally from straight-through slab waveguide 2 ends outputs.Interleaver of the present invention, the light signal entering from input waveguide can be exported from output waveguide efficiently by mixing right-angled intersection device, produces lower insertion loss, crosstalks and diffraction loss, thereby realize the mixing intersection transmission of different waveguide signal.The advantages such as the present invention has compact conformation, loss is low, manufacture difficulty is low, relative low price.
In the mixing right-angled intersection device of said structure, each slot wave waveguide mode converting unit is relative with a slab waveguide mode switching unit.That is to say, the adjacent setting of two slot wave waveguide mode converting units, two adjacent settings of slab waveguide mode switching unit, each slot wave waveguide mode converting unit is relative with a slab waveguide mode switching unit.This kind of structure setting, is mainly used in solving the intersection transmission problem of different waveguide input and output, is different from the identical situation of current input and output waveguide.In actual silicon-based monolithic Integrated design process, tend to run into the situation of different waveguide input and output, so the present invention is mainly used in solving the mixing intersection transmission problem of different input and output waveguides.
The making material of above-mentioned device all adopts silicon-on-insulator material, be that slot wave leads 1, the material of slab waveguide 2, mode converter 5, sinusoidal pattern conversion waveguide 6, right-angled intersection multimode waveguide 3, single mode waveguide 4 is silicon, the material of substrate and covering is silicon dioxide.Slot wave is led 1 microflute area filling low-index material, such as filling the materials such as silicon dioxide, silicon nanocrystal or polymkeric substance.The refractive index of these materials is all little than the refractive index of silicon, and difference is in 2 left and right.
Further, two described slot wave waveguide mode converting units and the identical length of two slab waveguide mode switching units etc.The length of Si Ge unit is identical, can reduce and crosstalk, improves the manufacture that intersects transfer efficiency and facilitate practical devices.
Further, described mode converter 5 comprises second waveguide region of leading the 1 first wave guide region being connected and being connected with sinusoidal pattern conversion waveguide 6 with slot wave, and first wave guide region is directly connected according to waveguide corresponding relation with the second waveguide region.In first wave guide region, the duct width of link slot waveguide 1 one sides adopts the setting of logarithmic curve, and the waveguide of opposite side and the width of corresponding microflute remain unchanged.In the second waveguide region, a side waveguide width that connects first wave guide region remains unchanged, and opposite side duct width adopts the setting of logarithmic curve, and the width of microflute adopts reciprocal logarithmic relationship to change.
Fig. 4 is the structural representation of mode converter.Duct width in mode converter 5 adopts the design of logarithmic curvilinear structures so that slot wave is led and slab waveguide between pattern close to adiabatic conversion, thereby realize efficient pattern conversion.The length of leading the mode converter that slab waveguide changes from slot wave is defined as successively the first length l 1 and the second length l 2, the first length l 1 are in mode converter 5, to lead the length in the first wave guide region being connected with slot wave; The second length is the length of the second waveguide region of being connected with sinusoidal pattern conversion waveguide 6 in mode converter 5.
Fig. 5 is the variation relation of mode converter transfer efficiency and its first length, and wherein transfer efficiency is defined as the power of mode converter output terminal and the ratio of its input end power.Increase transfer efficiency along with mode converter the first length during beginning increases comparatively fast, but transfer efficiency is tending towards saturated gradually when the first length is greater than 3 μ m.In conjunction with the variation relation of transfer efficiency, it is 4 μ m that the first length is preferably set.Fig. 6 is the variation relation of mode converter transfer efficiency and its second length, along with having there are two peak values in the increase transfer efficiency of mode converter the second length, lay respectively at 2.4 μ m and 3.6 μ m places, consider the compactedness of device architecture, selecting the second length is 2.4 μ m.Fig. 7 is the variation relation of mode converter transfer efficiency and operation wavelength, at 1.45 μ m to the transfer efficiency of the wavelength coverage internal schema converter of 1.65 μ m all higher than 98%, at the communication wavelengths place of 1.55 μ m, transfer efficiency approaches 99% especially, so the utilization in mixing right-angled intersection device of this kind of mode converter will be conducive to the lifting of device overall performance.Fig. 8 is the transmission mode field pattern in mode converter, can obviously see that slot wave is led with the light patterns of slab waveguide to have realized efficient transmission and conversion by this converter.
Further, the waveguiding structure that described sinusoidal pattern conversion waveguide 6 adopts width to change sinusoidally, for realizing the pattern conversion between single mode waveguide 4 and right-angled intersection multimode waveguide 3.Mode converter 5 adopts the design of logarithmic curvilinear structures, for realize slot wave lead 1 and slab waveguide 2 between pattern conversion efficiently.
The invention discloses a kind of silica-based nanowire mixing right-angled intersection device, aim to provide a kind of compact conformation, superior performance, manufacturing process simple, be easy to integrated hybrid waveguide cross-over design, can be used for the fields such as optical communication and integrated photonics.Light is led 1 input from slot wave, and in equidirectional slab waveguide 2 outputs, at slot wave, lead 1 output terminal and introduce mode converter 5, in order to realize slot wave lead 1 and slab waveguide 2 between the efficient conversion of pattern, and for realizing the sinusoidal pattern conversion waveguide 6 of pattern conversion between single mode waveguide 4 and right-angled intersection multimode waveguide 3.At waveguide infall, added right-angled intersection multimode waveguide 3, made the one-piece construction of device become simple compact, corresponding loss becomes very little simultaneously.
The sandwich layer of slab waveguide is silicon, and covering adopts earth silicon material, and the covering that slot wave is led is silicon dioxide, and the Nanowire Waveguides of the both sides, material (as: silicon dioxide etc.) ，Cao region of groove area filling low-refraction is silicon materials.
Fig. 2 is the principal component mould field pattern of the accurate transverse electric mode of slab waveguide, and the mould field of slab waveguide is mainly distributed in waveguide core layer.Fig. 3 is the principal component mould field pattern of the accurate transverse electric mode of slot wave guide structure, and the mould field that slot wave is led has occurred obvious enhancing in microflute region.By using mode converter 5, can realize the mutual conversion of pattern between the two.Fig. 9 shows transmission mode field pattern of the present invention, and the light field of input can, efficiently by right-angled intersection device, be transferred to corresponding output port.As a comparison, Figure 10 has provided the transmission mode field pattern of the first slab waveguide structure.This slab waveguide structure adopts the version of the direct right-angled intersection of slab waveguide.As can be seen clearly from figure 10 because intersecting, waveguide make incident field serious in infall loss.Figure 11 has provided the transmission mode field pattern of the second slab waveguide structure.This slab waveguide structure adopts in slab waveguide intersection center and has added multimode waveguide, the version that the slab waveguide of surrounding adopts tapering transition structure to be connected with multimode waveguide.Compare with the first slab waveguide structure, the second slab waveguide structure can be improved the transport property that waveguide intersects preferably, but being positioned at the multimode waveguide of center need to improve with the connected mode of slab waveguide around, for example, at waveguide link, slab waveguide does not mate with the width of multimode waveguide, can bring thus coupling loss and the reflection loss of part; The kind of the waveguide of input and output simultaneously should not be confined to single slab waveguide structure yet.Comparison diagram 9 and Figure 11 can see, the transverse port of device shown in Figure 11 has portion of energy output, corresponding to crosstalking, also has portion of energy at intersection center, diffraction to occur and scattered out along transmission direction, corresponding to diffraction loss in transmission direction simultaneously.And structure of the present invention has obviously reduced this two kinds of main losses as can be seen from Fig. 9, improved transfer efficiency.Therefore, technical scheme of the present invention and the optical signal transmission characteristics that obtains are obviously better than existing slab waveguide interleaver.
Content described in this instructions embodiment is only enumerating the way of realization of inventive concept; protection scope of the present invention should not be regarded as only limiting to the concrete form that embodiment states, protection scope of the present invention also and the equivalent technologies means that can expect according to inventive concept in those skilled in the art.
Claims (4)
1. a silica-based nanowire mixing right-angled intersection device, it is characterized in that, this interleaver comprises two slot wave waveguide mode converting units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide (6) and right-angled intersection multimode waveguides (3), and two slot wave waveguide mode converting units are changed waveguide (6) by sinusoidal pattern respectively with two slab waveguide mode switching units and are connected with right-angled intersection multimode waveguide (3); Each slot wave waveguide mode converting unit is relative with a slab waveguide mode switching unit; Each slot wave waveguide mode converting unit comprises for the slot wave of light signal input leads (1) and mode converter (5), and mode converter (5) is connected to slot wave and leads between (1) and sinusoidal pattern conversion waveguide (6); Each slab waveguide mode switching unit comprises slab waveguide (2) and the single mode waveguide (4) for light signal output, and single mode waveguide (4) is connected between slab waveguide (2) and sinusoidal pattern conversion waveguide (6).
2. according to silica-based nanowire mixing right-angled intersection device claimed in claim 1, it is characterized in that two described slot wave waveguide mode converting units and the identical length of two slab waveguide mode switching units etc.
3. according to silica-based nanowire mixing right-angled intersection device claimed in claim 1, it is characterized in that, described mode converter (5) comprises leads with slot wave the first wave guide region that (1) be connected and the second waveguide region being connected with sinusoidal pattern conversion waveguide (6), and first wave guide region is directly connected with the second waveguide region; In first wave guide region, the duct width of link slot waveguide (1) one side adopts the setting of logarithmic curve, and the waveguide of opposite side and the width of corresponding microflute remain unchanged; In the second waveguide region, a side waveguide width that connects first wave guide region remains unchanged, and opposite side duct width adopts the setting of logarithmic curve, and the width of microflute adopts reciprocal logarithmic relationship to change.
4. according to silica-based nanowire mixing right-angled intersection device claimed in claim 1, it is characterized in that, the waveguiding structure that described sinusoidal pattern conversion waveguide (6) adopts width to change sinusoidally, for realizing the pattern conversion between single mode waveguide (4) and right-angled intersection multimode waveguide (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310512245.8A CN103513333B (en) | 2013-10-25 | 2013-10-25 | A kind of silica-based nanowire mixing right-angled intersection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310512245.8A CN103513333B (en) | 2013-10-25 | 2013-10-25 | A kind of silica-based nanowire mixing right-angled intersection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103513333A true CN103513333A (en) | 2014-01-15 |
| CN103513333B CN103513333B (en) | 2016-01-13 |
Family
ID=49896336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310512245.8A Expired - Fee Related CN103513333B (en) | 2013-10-25 | 2013-10-25 | A kind of silica-based nanowire mixing right-angled intersection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103513333B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103760637A (en) * | 2014-02-10 | 2014-04-30 | 南京大学 | Minitype high-performance orthogonal silicon waveguide structure |
| CN105093410A (en) * | 2014-08-25 | 2015-11-25 | 北京大学 | Waveguide mode converter |
| WO2016008116A1 (en) * | 2014-07-16 | 2016-01-21 | 华为技术有限公司 | Crossed waveguide |
| CN105842788A (en) * | 2016-05-30 | 2016-08-10 | 东南大学 | Dual-core-layer polarization rotator |
| CN104090331B (en) * | 2014-06-30 | 2017-01-11 | 北京工业大学 | Efficient compact rectangular ring resonant cavity waveguide type optical filter |
| CN106980153A (en) * | 2017-04-19 | 2017-07-25 | 浙江工业大学 | A kind of preparation method of the oval right-angled intersection waveguide based on multimode interference principle |
| CN106980154A (en) * | 2017-04-19 | 2017-07-25 | 浙江工业大学 | Oval right-angled intersection waveguide based on multimode interference principle |
| CN111819480A (en) * | 2018-03-09 | 2020-10-23 | 三菱电机株式会社 | Photonic device for converting optical modes of a light beam |
| CN112649918A (en) * | 2021-01-22 | 2021-04-13 | 杭州芯耘光电科技有限公司 | Edge coupler |
| CN114047578A (en) * | 2022-01-12 | 2022-02-15 | 季华实验室 | Waveguide layer and cross waveguide |
| WO2022247408A1 (en) * | 2021-05-24 | 2022-12-01 | 南京刻得不错光电科技有限公司 | Photonic device, crossed waveguide, waveguide layer and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621792B1 (en) * | 1999-02-23 | 2003-09-16 | Avaya Technology Corp. | Computationally-efficient traffic shaper |
| CN2896310Y (en) * | 2006-05-24 | 2007-05-02 | 北京航空航天大学 | Multi-way light power distributer |
| CN102540625A (en) * | 2012-01-10 | 2012-07-04 | 东南大学 | All-optical logic gate device based on nanowire waveguides of multislot silicon substrate |
-
2013
- 2013-10-25 CN CN201310512245.8A patent/CN103513333B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6621792B1 (en) * | 1999-02-23 | 2003-09-16 | Avaya Technology Corp. | Computationally-efficient traffic shaper |
| CN2896310Y (en) * | 2006-05-24 | 2007-05-02 | 北京航空航天大学 | Multi-way light power distributer |
| CN102540625A (en) * | 2012-01-10 | 2012-07-04 | 东南大学 | All-optical logic gate device based on nanowire waveguides of multislot silicon substrate |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103760637A (en) * | 2014-02-10 | 2014-04-30 | 南京大学 | Minitype high-performance orthogonal silicon waveguide structure |
| CN104090331B (en) * | 2014-06-30 | 2017-01-11 | 北京工业大学 | Efficient compact rectangular ring resonant cavity waveguide type optical filter |
| WO2016008116A1 (en) * | 2014-07-16 | 2016-01-21 | 华为技术有限公司 | Crossed waveguide |
| CN105093410A (en) * | 2014-08-25 | 2015-11-25 | 北京大学 | Waveguide mode converter |
| CN105093410B (en) * | 2014-08-25 | 2018-08-03 | 北京大学 | A kind of waveguide mode converter |
| CN105842788A (en) * | 2016-05-30 | 2016-08-10 | 东南大学 | Dual-core-layer polarization rotator |
| CN106980154A (en) * | 2017-04-19 | 2017-07-25 | 浙江工业大学 | Oval right-angled intersection waveguide based on multimode interference principle |
| CN106980153A (en) * | 2017-04-19 | 2017-07-25 | 浙江工业大学 | A kind of preparation method of the oval right-angled intersection waveguide based on multimode interference principle |
| CN106980153B (en) * | 2017-04-19 | 2019-05-31 | 浙江工业大学 | A kind of production method of the oval right-angled intersection waveguide based on multimode interference principle |
| CN111819480A (en) * | 2018-03-09 | 2020-10-23 | 三菱电机株式会社 | Photonic device for converting optical modes of a light beam |
| CN111819480B (en) * | 2018-03-09 | 2022-07-12 | 三菱电机株式会社 | Photonic device for converting optical modes of a light beam |
| CN112649918A (en) * | 2021-01-22 | 2021-04-13 | 杭州芯耘光电科技有限公司 | Edge coupler |
| WO2022247408A1 (en) * | 2021-05-24 | 2022-12-01 | 南京刻得不错光电科技有限公司 | Photonic device, crossed waveguide, waveguide layer and manufacturing method therefor |
| CN114047578A (en) * | 2022-01-12 | 2022-02-15 | 季华实验室 | Waveguide layer and cross waveguide |
| CN114047578B (en) * | 2022-01-12 | 2022-04-01 | 季华实验室 | Waveguide layer and cross waveguide |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103513333B (en) | 2016-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103513333B (en) | A kind of silica-based nanowire mixing right-angled intersection device | |
| CN105829933B (en) | Wave-guide polarization separation and polarization converter | |
| CN103345022B (en) | Asymmetric planar optical waveguide mode multiplexing/demultiplexing device based on few-mode fibers | |
| CN105759357B (en) | A kind of close-coupled mode step number converter based on slot type waveguide | |
| CN105116491B (en) | A kind of silicon substrate groove waveguides integrated-type optical power distributor | |
| CN105068189B (en) | InP-base wavelength-division mode division multiplexing lacks mould optic communication integreted phontonics transmitting chip | |
| CN204536588U (en) | Polarization beam splitting spinner | |
| CN105093408B (en) | A kind of silica-based nanowire polarization beam apparatus based on schema evolution principle | |
| CN105204113B (en) | A kind of adjustable polarization rotary device of silicon substrate | |
| CN201177670Y (en) | 3 branch light splitter of mode stimulating wave-guide construction | |
| CN105549154B (en) | A kind of integrated multiple-mode interfence magneto optic isolator of unidirectional magnetiztion semiconductor waveguide | |
| CN103558661B (en) | A kind of integrated polarizing converter based on silica-based L shape waveguiding structure | |
| CN102749676B (en) | Cross waveguide based on linear tapered multimode interference principle | |
| CN105866885B (en) | Polarization beam splitting rotator | |
| CN107533197A (en) | A kind of polarization rotator and optical signal processing method | |
| CN108603985A (en) | A kind of photo-coupler and light processing method | |
| CN103116202B (en) | Visible light wave combiner | |
| CN101840031B (en) | Light-operated dynamic all-optical buffer shaper based on composite grating nonreciprocal coupling | |
| Zhu et al. | Efficient silicon integrated four-mode edge coupler for few-mode fiber coupling | |
| CN103698848B (en) | A kind of optical fibre mode converter | |
| CN117092748B (en) | Compact adiabatic mode evolution ware | |
| CN204129403U (en) | Based on the all-optical XOR logic door of vertical coupled micro-cyclic laser optical bistability | |
| CN115857098B (en) | Optical circulator on silicon substrate | |
| CN105634466B (en) | A kind of electric light logic gate of SOI based structures | |
| CN102540625B (en) | All-optical logic gate device based on nanowire waveguides of multislot silicon substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160113 Termination date: 20181025 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |