CN105842788A - Dual-core-layer polarization rotator - Google Patents
Dual-core-layer polarization rotator Download PDFInfo
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- CN105842788A CN105842788A CN201610368900.0A CN201610368900A CN105842788A CN 105842788 A CN105842788 A CN 105842788A CN 201610368900 A CN201610368900 A CN 201610368900A CN 105842788 A CN105842788 A CN 105842788A
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- core layer
- silicon
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- polarization rotator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
Abstract
The invention discloses a dual-core-layer polarization rotator, which comprises a silicon core layer, a silicon dioxide core layer, a metal strip, a silicon dioxide coating and a substrate, wherein the substrate is located at the bottom part of the silicon core layer; the silicon core layer is in the shape of a square column, a corner of the top part of the silicon core layer is provided with a first groove which is in the shape of a square column, and the first groove is internally provided with the silicon dioxide core layer; the silicon dioxide core layer is in the shape of a square column, a corner of the top part of the silicon dioxide core layer is provided with a second groove which is in the shape of a square column, the second groove is internally provided with the metal strip, and the metal strip is in the shape of a square column; and the silicon core layer, the silicon dioxide core layer and the metal strip form a nested structure, and the external part of the nested structure is coated with the silicon dioxide coating. The dual-core-layer polarization rotator has the advantages that the cross sectional area is small, the polarization conversion length is significantly shortened and the like.
Description
Technical field
The present invention relates to one return for optical communication system, optical computer system and photon/optoelectronic intagration
The plasma type polarization rotator on road, belongs to integrated optics technique field.
Background technology
Silica-based fiber waveguide has the great potential as the upper photon circuit platform of ultra-compact of structure.Silicon and
Refractive index difference bigger between silica makes the bending radius of this waveguiding structure can be decreased to several
Micron.The most existing multiple function element based on silicon waveguide is suggested and is applied.But silicon ripple
Lead and there is bigger structural birefringence effect, it will cause polarization mode dispersion, polarization dependent loss and partially
Shake the dependence characteristic such as wavelength.These polarization dependences significantly limit the application of silicon photonic device.This
Outward, along with improving constantly of fibre system message transmission rate, Polarization Control and the weight of stability operation
The property wanted also is improving constantly, and becomes more and more important for this Development of Novel polarization control system, and polarizes
The core of rotary device this type of system just.
At present, on sheet, polarization rotator typically uses the design of materials such as silicon, silicon nitride and silica,
It is generally based on several Classic Wave guide structure, such as: rectangular waveguide, ridge waveguide etc., in these waveguides
On the basis of tilt monolateral, and then utilize hypotenuse set up 45 ° tilt basic modes, it is achieved pattern rotate；Profit
Form many core region with multiple silicon compound, adjust the mode distributions in silicon core layer and corresponding pattern
Equivalent refractive index, thus implementation pattern rotates；Use multiple silicon core layer to be placed in parallel, form space not
Symmetrical arrangement, makes mode distributions concentrate on the silicon dioxide region between sandwich layer, it is achieved pattern rotates.
In above-mentioned several polarization rotators, owing to the refringence between silicon and silicon compound is limited, often need
Cross-sectional area that will be bigger and longer transition length, to realize higher polarization rotation efficiency, accordingly
Device size also will be greatly increased, be unfavorable for the requirement being densely integrated on sheet.
In recent years, plasma nanostructured due in metal, the field humidification of dielectric interface,
A lot of fields attract wide attention.Its significant field humidification may be used for breaking diffraction and limits,
And be used for realizing sub-wavelength fiber waveguide, the raising for nano-photon integrated optical circuit integrated level has important
Meaning.Simultaneously as its humidification only occurs in the polarization mode of plasma nanostructured,
And require that associative mode electric field is perpendicular to metal, dielectric interface, there is the strongest polarization selectivity.
Therefore, use plasma nanostructured to realize polarization selector can solve conventional polarization circulator is deposited
A lot of problems.Such as, compare and traditional design need use large area refractive index close material,
Mold yard spatial distribution can be efficiently adjusted in design based on plasma nanostructured, reduce cross-sectional area and
Device size；In traditional design, equivalence refractive index difference is less, and transition length is very big, generally reaches
Tens microns, and design based on plasma nanostructured can adjust the equivalent refractive index of two basic modes,
Difference between increase, high degree shortens transition length.To this end, it is contemplated that utilize metal band to tie
Close earth silicon material, polarization rotator on a kind of sheet of design, based on special structure and working mechanism,
Make incident optical signal be divided into two basic mode directions, and be respectively distributed to silica sandwich layer and silicon core layer,
And then realize the big difference between equivalent refractive index, reach to shorten transition length and the purpose of device size.
Summary of the invention
Goal of the invention: in order to overcome the deficiency of existing polarization rotator, the present invention provides a kind of plasma
The advantages such as polarization rotator, has cross-sectional area little, the significantly shortening of polarization conversion length.
For achieving the above object, the technical solution used in the present invention is:
A kind of twin-core layer polarization rotator, including silicon core layer, silica sandwich layer, metal band, dioxy
SiClx covering and substrate, described substrate is positioned at bottom silicon core layer；Described silicon core layer be shaped as square
Post, one jiao of its top is provided with the first groove of a square pillar, is provided with in this first groove
Silica sandwich layer；Described silica sandwich layer be shaped as square post, one jiao of its top is provided with
Second groove of one square pillar, is provided with metal band in this second groove, metal band
It is shaped as square post；Silicon core layer, silica sandwich layer, metal band form nested structure, and this is embedding
The outside of nested structure is coated with silicon oxide covering.
Described first groove and the second groove are positioned at the same side.
Described silicon core layer, silica sandwich layer, the length of side of facing of metal band are chosen for 0.3 respectively
Micron, 0.1 micron, 0.06 micron.
A length of 1.9 microns of described polarization rotator.
Beneficial effect: compared with prior art, technical scheme has the advantages that
1, metal has high field enhancing and local effect, and the metal band that size is less can efficiently be adjusted
Mold yard is distributed, it is achieved bigger intermode equivalent refractive index difference, and then shortens polarization length of rotation；
2, metal band can substitute large-area silicon nitride, silica, it is possible to reduces the horizontal stroke of structure
Sectional dimension, with common silicon waveguide, plasma waveguide size approximation, beneficially input and output interconnection；
3, length and cross-sectional area reduce the integrated level beneficially improving device architecture, it is possible at little
More function is realized on Ji.
Accompanying drawing explanation
Fig. 1 is the structure chart of twin-core layer polarization rotator；
Fig. 2 is the top view of an embodiment of twin-core layer polarization rotator；
Fig. 3 is the Hx component mode distributions of input waveguide cross section TM mould；
Fig. 4 is the Hy component mode distributions of input waveguide cross section TM mould；
Fig. 5 is the Hx component mode distributions of output waveguide cross section TE mould；
Fig. 6 is the Hy component mode distributions of output waveguide cross section TE mould；
Fig. 7 be polarization rotator be 1.55 μm in operation wavelength, TM mould input time Hx component mould field
Distribution；
Fig. 8 be polarization rotator be 1.55 μm in operation wavelength, TM mould input time Hy component mould field
Distribution；
In figure: 1-argent band, 2-silica sandwich layer, 3-silicon core layer, 4-substrate, 5-silica
Covering, 6-input waveguide, 7-output waveguide.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
Be illustrated in figure 1 a kind of twin-core layer polarization rotator, including silicon core layer 3, silica sandwich layer 2,
Metal band 1, silica covering 5 and substrate 4, substrate 4 is positioned at bottom silicon core layer 3；Silicon core layer
3 be shaped as square post, one jiao of its top is provided with the first groove of a square pillar, and this is the years old
One groove is provided with silica sandwich layer 2；Silica sandwich layer 2 be shaped as square post, its top
One jiao of portion is provided with the second groove of a square pillar, is provided with metal band in this second groove
1, metal band 1 be shaped as square post；Silicon core layer 3, silica sandwich layer 2, metal band 1
Forming nested structure, the outside of this nested structure is coated with silicon oxide covering 5.
Wherein, the first groove and the second groove are positioned at the same side.
Each sandwich layer is for realizing and input and output matching of waveguide, and metal band 1 and silica sandwich layer 2 are placed
At silicon core layer 3 top, structure lateral dimension is contracted to and common rectangular silicon waveguide, plasma waveguide
Size approximates, and detailed description of the invention is given in design, silicon core layer 3, silica sandwich layer 2, bonding jumper
The length of side of the facing with 1 is chosen for 0.3 micron respectively, 0.1 micron, 0.06 micron.Silicon core layer
3, silica sandwich layer 2, the length of side design of the facing of metal band 1, embodiment gold can be met
The field belonged to strengthens, the requirement of surface local effect, it is also possible to meets and conveniently realizes wanting of structure structure
Ask.
Metal band 1 is used to adjust basic mode distribution, it is achieved the separation of the mould field spatial distribution of two basic modes,
To bigger equivalent refractive index difference, it is achieved shorten the purpose of transition length, in the design be given,
Polarization rotator contraction in length is to 1.9 microns.
The twin-core layer polarization rotator of the present invention is prepared by following methods: main structure body is foursquare silicon core
Layer, loses square indentations at top one horn craving, grows rectangle silica sandwich layer, and at silica
Top homonymy etching square indentations deposit argent, forms three layers of square nested structure, and grows
Silica covering, covers overall structure.
Owing to each sandwich layer is square structure, there is good symmetry, and covering is two with substrate
Silica, the mode distributions in structure is mainly by field enhancement effect and the local effect of metal band
Impact, cause original geometrical symmetry horizontal, longitudinal be destroyed, basic mode deviation transverse electric (TE)
Mould, horizontal magnetic (TM) mould, the diagonal that overlaps with each sandwich layer respectively overlap, vertical.Wherein with each sandwich layer
The mould field that diagonal overlaps affects due to the local effect of metal, and electric field focuses primarily upon silica
Sandwich layer, its equivalent refractive index is less, and another mould field is mainly distributed on the silicon core layer that refractive index is bigger, its
Equivalent refractive index is bigger.Owing to metal significantly affects the distribution between each sandwich layer of the mould field, therefore two kinds
The equivalent refractive index of basic mode has bigger difference, and the difference of equivalent refractive index can directly affect two kinds of moulds
Formula optical signal spread speed in polarization rotator part, bigger difference can accelerate polarize rotary speed,
Shorten transition length and reduce device cross-section amass.
Embodiment
As in figure 2 it is shown, TE mould or TM mould optical signal enter the polarization rotation of twin-core layer by input waveguide 6
Turning device, it is mutual that the polarization converter through length about 1.9 microns realizes between TE mould and TM mould
Conversion, and export to output waveguide 7 and complete function.Due to polarization converter basic mode polarization direction with
Differ with the basic mode polarization direction of rectangular waveguide in the basic mode polarization direction of input waveguide 6 and output waveguide 7
Causing, input optical signal is when entering device area, by again according to the basic mode direction of polarization rotator part
Being decomposed into two-beam signal, owing to polarization rotator is at 45 ° with the basic mode in rectangular waveguide, polarization rotates
Two-beam signal strength signal intensity in device is identical, and each independent propagation.In polarization rotator, due to
The spatial distribution of both of which is different, causes two kinds of propagation to have different speed, this speed difference
Directly can be embodied by the size of equivalent refractive index.In the present invention due to the high field humidification of metal
With surface localization effect, this spatial distribution difference becomes apparent from, equivalent refractive index and spread speed
Difference is bigger, and when propagating, different spread speeds will cause two-beam signal to have phase difference, and
Add up with propagation distance, when the two phase difference is 180 °, the polarization direction causing composite wave is sent out
Raw 90 ° of rotations.Now, the spread length needed for 180 ° of phase differences of accumulation is referred to as polarization rotation
The transition length of device.Due to the fact that the mode distributions that have adjusted both of which, cause bigger equivalence
Refractive index difference so that faster, transition length is shorter in phase difference accumulation in the air.Work as device
Working in 1.55 microns, during TM mould input state, Fig. 3, Fig. 4, Fig. 5, Fig. 6 are respectively described it
Input TM mould, the spatial distribution of output TE mould Hx, Hy component mould field, it can be seen that in input
The optical signal propagated in waveguide 6 is TM mould, and the optical signal propagated in output waveguide 7 is TE mould, device
In part working region, efficiently achieve the rotation to TE mould of the TM mould.Fig. 7, Fig. 8 are that TM mould is defeated
Fashionable transverse magnetic field components Hx, the mode distributions of longitudinal magnetic field component Hy.Propagate in emulating image
The incidence of Distribution of Magnetic Field clear performance after transverse magnetic field components reduce rapidly, longitudinal magnetic field is divided simultaneously
Amount strengthens rapidly, it is achieved TM mould is to the rapid conversion of TE mould.Horizontal by contrast input and output optical signal
To longitudinal component, it can be seen that this polarization rotator part, under providing design parameter, realizes well
The function that polarization rotates.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for the art
For those of ordinary skill, under the premise without departing from the principles of the invention, it is also possible to make some improvement
And retouching, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (5)
1. a twin-core layer polarization rotator, it is characterised in that: include silicon core layer (3), silica sandwich layer
(2), metal band (1), silica covering (5) and substrate (4), described substrate (4) position
In silicon core layer (3) bottom；Described silicon core layer (3) be shaped as square post, one jiao of its top sets
It is equipped with the first groove of a square pillar, this first groove is provided with silica sandwich layer (2)；
Described silica sandwich layer (2) be shaped as square post, one jiao of its top is provided with a square
Second groove of column, is provided with metal band (1), the shape of metal band (1) in this second groove
Shape is square post；Silicon core layer (3), silica sandwich layer (2), metal band (1) form nesting
Structure, the outside of this nested structure is coated with silicon oxide covering (5).
Twin-core layer polarization rotator the most according to claim 1, it is characterised in that: described first groove
It is positioned at the same side with the second groove.
Twin-core layer polarization rotator the most according to claim 1, it is characterised in that: described silicon core layer (3),
Silica sandwich layer (2), the length of side of facing of metal band (1) are chosen for 0.3 micron respectively,
0.1 micron, 0.06 micron.
Twin-core layer polarization rotator the most according to claim 1, it is characterised in that: described polarization rotates
A length of 1.9 microns of device.
Twin-core layer polarization rotator the most according to claim 1, it is characterised in that: described metal band
(1) material is silver.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610368900.0A CN105842788B (en) | 2016-05-30 | 2016-05-30 | A kind of twin-core layer polarization rotator |
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| CN201610368900.0A CN105842788B (en) | 2016-05-30 | 2016-05-30 | A kind of twin-core layer polarization rotator |
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| CN105842788A true CN105842788A (en) | 2016-08-10 |
| CN105842788B CN105842788B (en) | 2018-10-30 |
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| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
| CN104614809A (en) * | 2015-01-12 | 2015-05-13 | 北京大学 | Light polarization rotator and light polarization rotating method |
| KR20150120012A (en) * | 2014-04-16 | 2015-10-27 | 성균관대학교산학협력단 | Apparatus and method for splitting light and surface plasmon polariton from incident light |
-
2016
- 2016-05-30 CN CN201610368900.0A patent/CN105842788B/en active Active
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| CN101118302A (en) * | 2007-07-30 | 2008-02-06 | 厦门大学 | Long distance surface plasma laser wave-guide facing to integrated optical circuit and manufacturing method therefor |
| CN103513333A (en) * | 2013-10-25 | 2014-01-15 | 东南大学 | Blended crossing device for silicon-based nanowire |
| CN103558661A (en) * | 2013-11-11 | 2014-02-05 | 东南大学 | Integrated polarization converter based on silicon-based L-shaped waveguide structure |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
| KR20150120012A (en) * | 2014-04-16 | 2015-10-27 | 성균관대학교산학협력단 | Apparatus and method for splitting light and surface plasmon polariton from incident light |
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Non-Patent Citations (1)
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