CN103713357A - Silicon-based optical waveguide polarization converter and preparation method thereof - Google Patents
Silicon-based optical waveguide polarization converter and preparation method thereof Download PDFInfo
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- CN103713357A CN103713357A CN201310714245.6A CN201310714245A CN103713357A CN 103713357 A CN103713357 A CN 103713357A CN 201310714245 A CN201310714245 A CN 201310714245A CN 103713357 A CN103713357 A CN 103713357A
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Abstract
The invention discloses a silicon-based optical waveguide polarization converter comprising a silicon substrate, a silicon dioxide layer covered on the upper surface of the silicon substrate, a silicon waveguide layer and a metal strip layer, wherein the cross section of the silicon waveguide layer is in L-shaped ; the lower surface of the silicon waveguide layer grows or bonds on the upper surface of the silicon dioxide layer; the upper surface of the silicon waveguide layer forms a high table surface and a lower table surface; and the metal strip layer is covered on the lower table surface of the silicon waveguide layer. By integrating the metal strip layer on the lower table surface of the asymmetric silicon waveguide layer, a surface plasma wave is formed in the silicon waveguide layer and the effective refractive index difference between two polarization modes is increased; and since the efficiency of polarization conversion is inverse proportional to the effective refractive index difference, the length of the polarization converter is substantially reduced. Besides, since the metal strip layer is prepared on the lower table surface of the asymmetric silicon waveguide layer, the metal strip layer can be obtained directly through metal evaporation and stripping processes after the etching process of the lower table surface without an extra alignment photoetching process, and the metal strip layer is easy to prepare.
Description
Technical field
The present invention relates to a kind of silica-based optical waveguide polarization converter and preparation method thereof, relate in particular to a kind of silica-based optical waveguide polarization converter that utilizes surface plasma wave lifting polarization conversion efficiency and preparation method thereof, belong to optical communication technique field.
Background technology
Optical communication is to take the communication technology that light wave is carrier wave, and than cable and radio etc., optical communication has great communication bandwidth, has irreplaceable status in today of multimedia and large data age.Optical fiber is the long carrier apart from optical transmission of information, and the processing of light signal is more completed by all kinds of optical modules or photoelectric chip.In order further to improve the integrated level of photoelectric chip, the silicon-based optical waveguide device of high-index-contrast provides good technology platform.But the lightwave transmission characteristics of different polarization states is different in this structure, and optical polarization in optical fiber is random, and the two coupling must cause related device and the extra polarization loss of system.On research and development photoelectric chip, highly integrated polarization converter is the approach addressing this problem.Mode Coupling technology is one of major technique realizing polarization converter.This technology depends on the conversion of the coupling formation polarization of two patterns in asymmetrical beam waveguide, yet in common silica-based optical waveguide polarization converter, the effective refractive index of two coupled mode is poor too little, cause and need the asymmetric waveguides of 100 microns of left and right could realize enough polarization conversion, be unfavorable for the Highgrade integration of photoelectric device chip.
In view of this, the inventor studies this, develops specially a kind of silica-based optical waveguide polarization converter and preparation method thereof, and this case produces thus.
Summary of the invention
The object of this invention is to provide a kind of silica-based optical waveguide polarization converter and preparation method thereof, by the structure of asymmetrical silicon ducting layer, and cover the bonding jumper layer on silicon ducting layer, realize the effective refractive index that two polarization modes are larger poor, thereby obtain higher polarization conversion efficiency.
To achieve these goals, solution of the present invention is:
A kind of silica-based optical waveguide polarization converter, comprise silicon substrate, cover silicon dioxide layer, silicon ducting layer and the bonding jumper layer of silicon substrate upper surface, wherein, the xsect of described silicon ducting layer is L-shaped, its lower surface is grown or is bonded on the upper surface of silicon dioxide layer, upper surface forms a high table top and a low table, and bonding jumper layer covers on the low table of silicon ducting layer.
Preferably, the width of described silicon ducting layer is 250-600 nanometer (the width sum that is high table top and low table is 250-600 nanometer), is highly 250-600 nanometer, and above-mentioned silicon ducting layer width guarantees that with choosing of height two polarization modes do not end.
Preferably, the bonding jumper width of bonding jumper layer is consistent with the width of silicon ducting layer low table, and between 80-250 nanometer, what bonding jumper layer can be for gold, silver, aluminium or copper is wherein a kind of, and bonding jumper layer thickness is 30-100 nanometer.
Preferably, the height of above-mentioned silicon ducting layer low table is 100-300 nanometer.
Preferably, above-mentioned silica-based optical waveguide polarization converter length is 1-10 micron.
During above-mentioned silica-based optical waveguide polarization converter work, these silica-based optical waveguide polarization converter two ends by the silica-based optical waveguide of symmetry of co-altitude and width as input and output, a micron guided wave mode enters into above-mentioned silica-based optical waveguide polarization converter, inspire two patterns simultaneously, asymmetry due to silicon ducting layer, light wave is in transmitting procedure, and above-mentioned two patterns are coupled, and the conversion of polarization occurs.Due to the low table integrated metal bar of silicon ducting layer, thereby form surface plasma wave in silicon ducting layer, the effective refractive index having increased between two polarization modes is poor, after transmission 1-10 micron, has just in time accumulated π phase place and has changed, and has realized the conversion of polarization.
The preparation method of above-mentioned silica-based optical waveguide polarization converter, comprises the steps:
(1) on SOI wafer, apply photoresist;
(2) with litho machine, expose;
(3) developer solution develops with photoresist, obtains the figure on photoresist;
(4) utilize dry etch process that the figure on photoresist is transferred to silicon, form the silicon ducting layer with a high table top;
(5) utilize glue-dispenser or oxygen plasma etch to remove residue photoresist;
(6) on silicon waveguide floor height table top, apply photoresist;
(7) with litho machine, aim at exposure;
(8) developer solution develops with photoresist, obtains the figure on photoresist in silicon waveguide;
(9) utilize dry etch process that the figure on photoresist is transferred to silicon, form the low table of silicon ducting layer;
(10) by metallic film evaporation technology, on the sample low table after previous step technique, prepare metallic film;
(11) utilize stripping technology to obtain and be only attached to the bonding jumper layer on silicon waveguide low table.
Compared with prior art, the invention has the advantages that: by the low table integrated metal bar at asymmetric silicon ducting layer, thereby form surface plasma wave in silicon ducting layer, the effective refractive index having increased between two polarization modes is poor, due to the efficiency of polarization conversion and pattern effective refractive index is poor is inversely proportional to, thus the length of greatly reducing polarization converter.
In addition, bonding jumper layer preparation of the present invention, on the low table of asymmetric silicon waveguide, therefore can directly obtain by evaporation of metal and stripping technology after the etching technics of low table, do not need extra alignment light carving technology, is therefore easy to preparation.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is the silica-based optical waveguide polarization converter of the present embodiment cross sectional representation;
Fig. 2 is the silicon wave-guide polarization mode field distribution plan of the silica-based optical waveguide polarization converter of the present embodiment;
Fig. 3 is another silicon wave-guide polarization mode field distribution plan of the silica-based optical waveguide polarization converter of the present embodiment;
Fig. 4 is preparation method's process flow diagram of the silica-based optical waveguide polarization converter of the present invention.
Embodiment
As shown in Figure 1, a kind of silica-based optical waveguide polarization converter, comprise silicon substrate 1, cover silicon dioxide layer 2, silicon ducting layer 3 and the bonding jumper layer 4 of silicon substrate 1 upper surface, wherein, the xsect of described silicon ducting layer 3 is L-shaped, its lower surface is grown or is bonded on the upper surface of silicon dioxide layer 2, and upper surface forms a high table top 31 and a low table 32, and bonding jumper layer 4 covers on the low table 32 of silicon ducting layer 3.By the low table 32 integrated metal bars at asymmetric silicon ducting layer 3, thereby form surface plasma wave in silicon ducting layer 3, the effective refractive index having increased between two polarization modes is poor, due to the efficiency of polarization conversion and pattern effective refractive index is poor is inversely proportional to, thus the length of greatly reducing polarization converter.
In the present embodiment, the breadth extreme of above-mentioned silicon ducting layer 3 is 500 nanometers, maximum height is 500 nanometers, wherein, high table top 31 width are 300 nanometers, and low table 32 width are 200 nanometers, low table 32 is from silicon ducting layer 3 bottom surface 300 nanometers, bonding jumper layer 4 material are gold, width 200 nanometers, thickness 50 nanometers.The length of whole silica-based optical waveguide polarization converter is 2.93 microns.
During the present embodiment work, described silica-based optical waveguide polarization converter two ends by the silica-based optical waveguide of symmetry of co-altitude and width as input and output, 1.55 microns of guided wave modes of a horizontal polarization enter into this silica-based optical waveguide polarization converter, inspire two patterns that Fig. 2 and Fig. 3 show respectively simultaneously, wherein Fig. 2 shows a polarization mode field distribution of the silica-based optical waveguide polarization converter of the present embodiment, can see that mode field concentrates in silicon ducting layer, and due to asymmetrical wave guide structure, its mould field distribution is also asymmetric, the effective refractive index of its pattern is 2.92.Fig. 3 shows another polarization mode field distribution of the silica-based optical waveguide polarization converter of the present embodiment, can see that mode field concentrates in silicon ducting layer, and due to asymmetrical wave guide structure, its mould field distribution is also asymmetric, and the effective refractive index of its pattern is 2.39.
Due to the asymmetry of waveguide, light wave is in transmitting procedure, and above-mentioned two patterns are coupled, and the conversion of polarization occurs.Because the poor Δ n of effective refractive index of two patterns in this waveguide reaches 0.53, after 1.46 microns of distances of transmission, just in time accumulated π phase place and changed, realized the conversion of polarization.By contrast, not having two pattern effective refractive indexs of optical waveguide of bonding jumper poor is only 0.1, therefore needs at least 7.75 microns of ability to obtain polarization conversion.
The effective refractive index of waveguide mode is poor to be obtained by numerical algorithm, can adopt professional business software to calculate in practicality.Polarization conversion efficiency P is proportional to sin
2(π L/2Lc), wherein Lc=λ/2 Δ n, represents that two patterns have accumulated π phase place and changed.Visible when L=Lc, it is maximum that polarization conversion efficiency reaches.Therefore for 1.55 microns of communication bands, according to this formula, can obtain, when Δ n=0.53, Lc=1.46 micron, obtains maximum polarization conversion; When Δ n=0.1, Lc=7.75 micron, obtains maximum polarization conversion.
The preparation method of above-mentioned silica-based optical waveguide polarization converter, as shown in Figure 4, comprises the steps:
(1) on SOI wafer, apply photoresist, SOI wafer of the present invention, is the commodity that can directly buy, has had silicon substrate and silicon dioxide layer above;
(2) with litho machine, expose;
(3) developer solution develops with photoresist, obtains the figure on photoresist;
(4) utilize dry etch process that the figure on photoresist is transferred to silicon, form the silicon ducting layer with a high table top;
(5) utilize glue-dispenser or oxygen plasma etch to remove residue photoresist;
(6) on silicon waveguide floor height table top, apply photoresist;
(7) with litho machine, aim at exposure;
(8) developer solution develops with photoresist, obtains the figure on photoresist in silicon waveguide;
(9) utilize dry etch process that the figure on photoresist is transferred to silicon, form the low table of silicon ducting layer;
(10) by metallic film evaporation technology, on the sample low table after previous step technique, prepare metallic film;
(11) utilize stripping technology to obtain and be only attached to the bonding jumper layer on silicon waveguide low table.
The bonding jumper layer preparation of the present embodiment, on the low table of asymmetric silicon waveguide, therefore can directly obtain by evaporation of metal and stripping technology after the etching technics of low table, do not need extra alignment light carving technology, is therefore easy to preparation.
Above-described embodiment and graphic and non-limiting product form of the present invention and style, suitable variation or modification that any person of an ordinary skill in the technical field does it, all should be considered as not departing from patent category of the present invention.
Claims (7)
1. a silica-based optical waveguide polarization converter, it is characterized in that: comprise silicon substrate, cover silicon dioxide layer, silicon ducting layer and the bonding jumper layer of silicon substrate upper surface, wherein, the xsect of described silicon ducting layer is L-shaped, its lower surface is grown or is bonded on the upper surface of silicon dioxide layer, upper surface forms a high table top and a low table, and bonding jumper layer covers on the low table of silicon ducting layer.
2. a kind of silica-based optical waveguide polarization converter as claimed in claim 1, is characterized in that: the width of described silicon ducting layer is 250-600 nanometer, is highly 250-600 nanometer.
3. a kind of silica-based optical waveguide polarization converter as claimed in claim 1, is characterized in that: the bonding jumper width of bonding jumper layer is consistent with the width of silicon ducting layer low table, between 80-250 nanometer.
4. a kind of silica-based optical waveguide polarization converter as claimed in claim 3, is characterized in that: described bonding jumper layer is the wherein a kind of of gold, silver, aluminium or copper, and bonding jumper layer thickness is 30-100 nanometer.
5. a kind of silica-based optical waveguide polarization converter as claimed in claim 1, is characterized in that: the height of above-mentioned silicon ducting layer low table is 100-300 nanometer.
6. a kind of silica-based optical waveguide polarization converter as claimed in claim 1, is characterized in that: above-mentioned silica-based optical waveguide polarization converter length is 1-10 micron.
7. a preparation method for silica-based optical waveguide polarization converter, is characterized in that comprising the steps:
1) on SOI wafer, apply photoresist;
2) with litho machine, expose;
3) developer solution develops with photoresist, obtains the figure on photoresist;
4) utilize dry etch process that the figure on photoresist is transferred to silicon, form the silicon ducting layer with a high table top;
5) utilize glue-dispenser or oxygen plasma etch to remove residue photoresist;
6) on silicon waveguide floor height table top, apply photoresist;
7) with litho machine, aim at exposure;
8) developer solution develops with photoresist, obtains the figure on photoresist in silicon waveguide;
9) utilize dry etch process that the figure on photoresist is transferred to silicon, form the low table of silicon ducting layer;
10) by metallic film evaporation technology, on the sample low table after previous step technique, prepare metallic film;
11) utilize stripping technology to obtain and be only attached to the bonding jumper layer on silicon waveguide low table.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319644A (en) * | 2014-07-04 | 2016-02-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Waveguide-type polarization converter and preparation method thereof |
| CN106154413A (en) * | 2015-04-21 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Fiber waveguide |
| JP2017215526A (en) * | 2016-06-01 | 2017-12-07 | 日本電気株式会社 | Optical waveguide structure, optical waveguide, and optical integrated circuit |
| CN111474629A (en) * | 2020-04-08 | 2020-07-31 | 浙江西湖高等研究院 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658025A (en) * | 2004-02-02 | 2005-08-24 | 朗迅科技公司 | Active/passive monolithically integrated channel filtering polarization splitter |
| CN1664631A (en) * | 2004-03-02 | 2005-09-07 | Jds尤尼弗思公司 | Reduction of polarization dependence in planar optical waveguides |
| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| US20100046886A1 (en) * | 2008-08-19 | 2010-02-25 | Lucent Technologies Inc. | Planar polarization splitter |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
-
2013
- 2013-12-23 CN CN201310714245.6A patent/CN103713357B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1658025A (en) * | 2004-02-02 | 2005-08-24 | 朗迅科技公司 | Active/passive monolithically integrated channel filtering polarization splitter |
| CN1664631A (en) * | 2004-03-02 | 2005-09-07 | Jds尤尼弗思公司 | Reduction of polarization dependence in planar optical waveguides |
| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| US20100046886A1 (en) * | 2008-08-19 | 2010-02-25 | Lucent Technologies Inc. | Planar polarization splitter |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105319644A (en) * | 2014-07-04 | 2016-02-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Waveguide-type polarization converter and preparation method thereof |
| CN105319644B (en) * | 2014-07-04 | 2018-12-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Waveguide type polarization converter and preparation method thereof |
| CN106154413A (en) * | 2015-04-21 | 2016-11-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Fiber waveguide |
| CN106154413B (en) * | 2015-04-21 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Optical waveguide |
| JP2017215526A (en) * | 2016-06-01 | 2017-12-07 | 日本電気株式会社 | Optical waveguide structure, optical waveguide, and optical integrated circuit |
| CN111474629A (en) * | 2020-04-08 | 2020-07-31 | 浙江西湖高等研究院 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
| CN111474629B (en) * | 2020-04-08 | 2022-07-15 | 浙江西湖高等研究院 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
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Denomination of invention: A silicon-based optical waveguide polarization converter and its preparation method Effective date of registration: 20220803 Granted publication date: 20170405 Pledgee: Agricultural Bank of China Co., Ltd. Shaoxing Paojiang Sub-branch Pledgor: SHAOXING ZKTEL EQUIPMENT Co.,Ltd. Registration number: Y2022330001592 |
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