CN111474629B - Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof - Google Patents
Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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Abstract
The invention discloses a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof. The strip geometry waveguide polarization rotates the input light and outputs different polarized light to different ports. The invention realizes the utilization of the three-dimensional space of the optical chip by the horizontal and vertical strip waveguides and realizes the conversion between the planar waveguide and the three-dimensional waveguide. The strip geometry waveguide of the present invention has a large effective refractive index difference and a large aspect ratio, thus better rotating the polarization and separating different polarization signals into different positions. And process errors can be compensated for by thermal tuning.
Description
Technical Field
The invention relates to the field of optical communication and optical calculation, in particular to a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof.
Background
The polarization of light provides an important dimension for optical communication and optical computation, and the optical signal can be processed without changing the light intensity through the control of the polarization of light. The rotation and separation of light polarization are common techniques for polarization control, and in the existing documents, the thickness of a waveguide on one side is changed by carrying out secondary etching on a silicon-based optical waveguide, so that polarization conversion is realized.
Polarization rotation and beam splitting of three-dimensional integrated waveguide devices are a key technology for realizing flexible three-dimensional integrated optical circuits. In order to realize efficient polarization rotation and separation, a strip waveguide with large effective refractive index difference and large aspect ratio can be adopted, but the current research on the strip waveguide mainly focuses on a horizontal strip waveguide, and the three-dimensional space of a light chip is not fully utilized.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof, which fully utilize a three-dimensional space by simultaneously utilizing a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide and provide a new scheme for the conversion from a planar waveguide to a three-dimensional waveguide device. The strip geometry waveguide of the present invention has a large effective refractive index difference and a large aspect ratio, thus better rotating the polarization and separating different polarization signals into different positions. By flexibly combining the horizontal and vertical strip waveguides, the polarization rotation beam splitting device with various functions can be realized, and process errors can be compensated through thermal adjustment.
The purpose of the invention is realized by the following technical scheme:
a polarization rotation beam splitter based on a strip-shaped geometric waveguide comprises a silicon substrate, a silicon dioxide lower cladding, a silicon nitride strip-shaped geometric structure and a polymer cladding, wherein the strip-shaped geometric waveguide consists of a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide, and is an L-shaped waveguide, a Z-shaped waveguide or a multi-mode interferometer (MMI) cascaded L-shaped waveguide;
the L-shaped waveguide consists of a horizontal strip waveguide and a vertical strip waveguide, and the left side or the right side of the horizontal strip waveguide is connected with the upper side or the lower side of the vertical strip waveguide;
the Z-shaped waveguide consists of two horizontal strip waveguides and a vertical strip waveguide, the upper side of the vertical strip waveguide is connected with the left side or the right side of one horizontal strip waveguide, and the lower side of the vertical strip waveguide is connected with the right side or the left side of the other horizontal strip waveguide;
the MMI cascade L-shaped waveguide consists of a 1 multiplied by 2MMI consisting of horizontal strip waveguides and a left L-shaped waveguide and a right L-shaped waveguide which are respectively connected to two output ports, wherein the left L-shaped waveguide refers to a vertical strip waveguide on the left side of the horizontal strip waveguide in the section of the waveguide seen from the output end to the input end; the right L-shaped waveguide refers to a waveguide section seen from the output end to the input end, wherein the vertical strip waveguide is arranged on the right side of the horizontal strip waveguide;
the strip geometry waveguide performs polarization rotation on input light and outputs different polarized light to different ports.
Further, it also includes a titanium heater.
Further, the titanium heater is arranged on the diagonal line of the silicon nitride strip-shaped geometric structure, and the distribution of the thermal field of the titanium heater is reduced along the diagonal line.
Furthermore, the number of the titanium heaters is two, one of the two titanium heaters is positioned on the upper side of the horizontal strip waveguide, and the other titanium heater is positioned on the left side or the right side of the vertical strip waveguide.
A method for preparing polarization rotation beam splitter, when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned on the upper side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and an inductive coupling plasma etching process, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching part of the silicon nitride above the polymer cladding and part of the silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip;
when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned at the lower side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and inductive coupling plasma etching processes, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching all silicon nitride above the polymer cladding and part of silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip. The invention has the following beneficial effects:
(1) the invention realizes the utilization of the three-dimensional space of the optical chip by the horizontal and vertical strip waveguides and realizes the conversion between the planar waveguide and the three-dimensional waveguide.
(2) By flexibly combining the horizontal and vertical strip waveguides, the polarization rotation beam splitting device with various functions can be realized.
(3) The invention realizes polarization rotation beam splitting through the strip geometry waveguide, and can better rotate polarization and separate different polarized light due to the large effective refractive index difference and the large height-width ratio of the strip waveguide. The aspect ratio of the vertical stripe waveguide in the prior art is limited by the top silicon thickness, which is about 2:1, and the aspect ratio of the vertical waveguide in the invention can reach 20:1 by atomic layer deposition processing.
(4) The present invention can compensate for process errors by diagonal heaters and horizontal/vertical heaters.
Drawings
FIG. 1 is a three-dimensional structure diagram of three strip-shaped geometric waveguides proposed by the present invention;
FIG. 2 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a horizontal slab waveguide;
FIG. 3 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a vertical stripe waveguide;
FIG. 4 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a right L-shaped waveguide;
FIG. 5 is a block diagram, an eigenmode field schematic and an electric field vector diagram of the left L-shaped waveguide;
FIG. 6 is a block diagram, a schematic illustration of the intrinsic mode field and a vector diagram of the electric field of a Z-shaped waveguide;
FIG. 7 is a schematic diagram of electric field vectors for polarization transformation of L-type and Z-type waveguides when inputting TM mode;
FIG. 8 is a schematic diagram of electric field vectors for polarization conversion of L-and Z-type waveguides when TE mode is input;
FIG. 9 is a structural diagram of an MMI cascade L-shaped waveguide;
FIG. 10 is a schematic diagram of mode fields and electric field vectors at different positions of an MMI cascade L-shaped waveguide;
FIG. 11 is a flow chart for the fabrication of a slab geometry waveguide with horizontal waveguides on the top side of the vertical waveguides;
FIG. 12 is a flow chart of the fabrication of a slab geometry waveguide with horizontal waveguides on the underside of the vertical waveguides;
fig. 13 shows two thermal tuning modes for a strip geometry waveguide.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the objects and effects of the present invention will be more apparent, it being understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.
The silicon nitride strip-shaped geometric waveguide comprises an L-shaped waveguide, a Z-shaped waveguide and an MMI cascaded L-shaped waveguide, wherein the L-shaped waveguide consists of a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide. Fig. 1 is a three-dimensional structural diagram of three strip-shaped geometric waveguides proposed by the present invention.
FIGS. 2 and 3 are a block diagram, an eigenmode field schematic and an electric field vector diagram of horizontal and vertical stripe waveguides, respectively, where W is1＝2μm，W2100 nm. The refractive index of the cladding polymer was 1.45 and the refractive index of the silicon nitride was 2. The operating center wavelength is 1550 nm. The effective refractive indexes of two eigenmodes of the strip waveguide are n respectively1＝1.474，n21.453. The symbols "+" and "-" in the mode field diagrams indicate positive and negative phases, respectively.
Fig. 4 and 5 are a structural diagram, an eigenmode field schematic diagram and an electric field vector diagram of the right and left L-shaped waveguides, respectively. The effective refractive indexes of two eigenmodes of the L-shaped waveguide are respectively n1＝1.481，n2＝1.479。
FIG. 6 is a block diagram, a schematic diagram of an intrinsic mode field and a vector diagram of an electric field of a Z-type waveguide. The Z-type waveguide has four eigenmodes in total, and the effective refractive indexes are n respectively1＝1.485，n2＝1.483，n3＝1.474，n41.453. As can be seen from the mode field diagram of the Z-type waveguide, the TE or TM mode input from the vertical stripe waveguide can be coupled only to eigenmodes 1 and 2, and cannot be coupled to modes 3 and 4.
Fig. 7 and 8 are schematic diagrams of electric field vectors for realizing polarization conversion when TM and TE modes are input from the vertical stripe waveguide, respectively, and the schematic diagrams can illustrate the polarization conversion principle of the left L-shaped waveguide and the Z-shaped waveguide. In fig. 7, x is the distance that light travels in the waveguide, and when x is 0, the input TM mode is coupled to eigenmodes 1 and 2. The phase difference of the two modes is 0, and the Ey components are opposite in phase. Due to the difference in effective refractive index between the two eigenmodes, a phase difference is generated when they travel in the waveguide, when light travels a distance L in the waveguideπThe two eigenmodes are pi out of phase. The resultant electric field vector is perpendicular to the electric field vector of the input light, and the output light is TE polarized, thereby realizing polarization conversion.
Lπ＝λ/2/(n1-n2)
Where λ is the wavelength in vacuum, n1And n2The effective refractive indices of the two eigenmodes, respectively.
In fig. 8, when x is 0, the input TE mode is coupled to eigenmodes 1 and 2. The two modes have a phase difference of pi and their Ey components are in phase. Similarly to fig. 7, the transmission distance L is passedπThe output light is then TM polarized.
When the TM mode is input from the vertical strip waveguide of the L-shaped waveguide on the right side, the electric field E is inputIDecomposed into a linear superposition of the eigenmodes 1 and 2 electric fields (E)I＝E2-E1) Over a transmission distance LπThen, an electric field E is outputO＝E2+E1Is TE polarization.
When TE mode is input from the vertical strip waveguide of the right L-shaped waveguide, an electric field E is inputI＝E2+E1Over a transmission distance LπThen, an electric field E is outputO＝E2-E1Is the TM polarization.
The output polarization state can also be analyzed according to the above method when input is made from the horizontal stripe waveguides of the left and right L-shaped waveguides.
According to the above analysis, both L-type and Z-type waveguides can achieve polarization conversion. The differences between them are: when the L-shaped waveguide inputs TM polarization from the vertical strip waveguide, the light passes throughOver transmission distance LπThen, outputting TE polarized light from the horizontal strip waveguide; when the Z-shaped waveguide inputs TM polarization from the vertical strip waveguide, the TM polarization passes through a transmission distance LπThen, TE polarized light of the same power is output from the upper and lower two horizontal strip waveguides. When TE polarization is input from the vertical strip waveguide, TM polarized light is output from the vertical strip waveguide. Therefore, the L-shaped waveguide and the Z-shaped waveguide output different polarized light to different output ports on the basis of polarization conversion, and polarization conversion and beam splitting are realized.
Fig. 9 is a structural diagram of an MMI cascade L-type waveguide in which a 1 × 2MMI is composed of horizontal strip waveguides. In the figure LMMI＝83μm，WMMI12 μm and d 6 μm. After passing through a 1 × 2MMI, the input TE polarized light is divided into two beams of TE polarized light with the same power and phase, and the two beams enter the left L-shaped waveguide and the right L-shaped waveguide, respectively. As can be seen from the analysis of polarization states in fig. 4 and 5, the polarization rotation directions of the two beams of light are opposite when the two beams of light are transmitted in the two L-shaped waveguides. Fig. 10 is a schematic diagram of mode fields and electric field vectors at different positions of an MMI cascaded L-shaped waveguide.
The preparation process of the strip geometry waveguide is shown in fig. 11, and the main steps are as follows:
(1) firstly, depositing a silicon dioxide lower cladding on a silicon substrate by using Plasma Enhanced Chemical Vapor Deposition (PECVD);
(2) spin coating a cladding polymer on silica and curing;
(3) spin-coating photoresist on the polymer core layer, and forming a pattern through ultraviolet lithography and development;
(4) plating a layer of titanium on the photoresist by an electron beam thermal evaporation process;
(5) removing the photoresist by a metal stripping process, and leaving titanium as a metal mask layer for polymer etching;
(6) etching the polymer cladding using an Inductively Coupled Plasma (ICP) process;
(7) removing the metal mask layer by wet etching;
(8) processing a layer of silicon nitride with the thickness of 100nm on the cladding polymer by using Atomic Layer Deposition (ALD), wherein the thickness of the silicon nitride on all surfaces of the cladding polymer is the same;
(9) processing photoresist on one side of the waveguide to protect the L-shaped waveguide region;
(10) etching redundant silicon nitride by ICP, and removing the photoresist to leave L-shaped silicon nitride; the horizontal strip silicon nitride structure protected by the photoresist on the left side of the vertical strip waveguide can be removed only by etching the region by plating a layer of photoresist, but the width of the vertical strip waveguide can be reduced, and the width deviation of the horizontal and vertical strip waveguides can be compensated by thermal regulation subsequently.
(11) A layer of cladding polymer was spun over the entire chip.
In order to process the L-type waveguide in which the horizontal stripe waveguide is on the lower side of the vertical stripe waveguide, the steps (9) to (11) of the above manufacturing process may be changed to the following process (fig. 12).
(9) Processing photoresist on one side of the waveguide to cover the vertical strip waveguide and the horizontal strip waveguides on the upper side and the lower side;
(10) etching the photoresist and the silicon nitride to the position of a black dotted line in the figure, and removing the photoresist to leave L-shaped silicon nitride;
(11) a layer of cladding polymer was spun over the entire chip.
In order to compensate for process errors of the strip waveguide, two heating electrode structures of fig. 13, respectively, diagonal heating and horizontal/vertical heating, respectively, may be employed. The diagonal heating is to process a titanium heater on the diagonal of the L-shaped waveguide, and the distribution of the thermal field of the titanium heater is decreased along the diagonal. The horizontal/vertical heating is to process a titanium heater on the upper side of the horizontal strip waveguide and on the left side of the vertical strip waveguide respectively, control the heating current of the two electrodes respectively, and compensate the process deviation of the horizontal and vertical strip waveguides. Since the strip waveguide optical field is mainly leaked in the cladding polymer, the waveguide effective refractive index will decrease with the refractive index of the cladding polymer when the temperature is increased.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the invention and is not intended to limit the invention to the particular forms disclosed, and that modifications may be made, or equivalents may be substituted for elements thereof, while remaining within the scope of the claims that follow. All modifications, equivalents and the like which come within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (3)
1. A polarization rotation beam splitter based on a strip-shaped geometric waveguide is characterized in that the strip-shaped geometric waveguide comprises a silicon substrate, a silicon dioxide lower cladding layer, a silicon nitride strip-shaped geometric structure and a polymer cladding layer, the strip-shaped geometric waveguide consists of a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide, and the strip-shaped geometric waveguide is an L-shaped waveguide, a Z-shaped waveguide or a multi-mode interferometer cascaded L-shaped waveguide; the vertical strip waveguide is processed by an atomic layer deposition method, the utilization of the three-dimensional space of the optical chip is realized through the horizontal and vertical strip waveguides, and the conversion between the planar waveguide and the three-dimensional waveguide is realized;
the L-shaped waveguide consists of a horizontal strip waveguide and a vertical strip waveguide, and the left side or the right side of the horizontal strip waveguide is connected with the upper side or the lower side of the vertical strip waveguide;
the Z-shaped waveguide consists of two horizontal strip waveguides and a vertical strip waveguide, the upper side of the vertical strip waveguide is connected with the left side or the right side of one horizontal strip waveguide, and the lower side of the vertical strip waveguide is connected with the right side or the left side of the other horizontal strip waveguide;
the multimode interferometer cascade L-shaped waveguide consists of a 1 multiplied by 2 multimode interferometer consisting of horizontal strip waveguides and a left L-shaped waveguide and a right L-shaped waveguide which are respectively connected to two output ports, wherein the left L-shaped waveguide refers to a vertical strip waveguide on the left side of the horizontal strip waveguide in the section of the waveguide seen from the output end to the input end; the right L-shaped waveguide refers to a vertical strip waveguide on the right side of the horizontal strip waveguide in the viewed waveguide section when viewed from the output end to the input end;
the strip geometry waveguide performs polarization rotation on input light and outputs different polarized light to different ports;
when the horizontal strip waveguide in the silicon nitride strip geometric waveguide is positioned on the upper side of the vertical strip waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure above a silicon dioxide lower cladding by ultraviolet lithography and an inductively coupled plasma etching process, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical strip waveguide region by photoresist, etching part of the silicon nitride above the polymer cladding and part of the silicon nitride above the silicon dioxide lower cladding by the inductively coupled plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip;
when the horizontal strip waveguide in the silicon nitride strip geometric waveguide is positioned at the lower side of the vertical strip waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure above a silicon dioxide lower cladding by ultraviolet lithography and an inductive coupling plasma etching process, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical strip waveguide region by photoresist, etching all the silicon nitride above the polymer cladding and part of the silicon nitride above the silicon dioxide lower cladding by the inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip.
2. The polarization rotating beam splitter according to claim 1, further comprising a titanium heater disposed diagonally to the silicon nitride strip geometry with a decreasing thermal field profile along the diagonal.
3. The polarization rotating beam splitter based on stripe geometry waveguide of claim 1 further comprising two titanium heaters, one on the upper side of the horizontal stripe waveguide and the other on the left or right side of the vertical stripe waveguide.
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