CN111474629A - Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof - Google Patents
Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof Download PDFInfo
- Publication number
- CN111474629A CN111474629A CN202010269235.6A CN202010269235A CN111474629A CN 111474629 A CN111474629 A CN 111474629A CN 202010269235 A CN202010269235 A CN 202010269235A CN 111474629 A CN111474629 A CN 111474629A
- Authority
- CN
- China
- Prior art keywords
- waveguide
- strip
- horizontal
- vertical
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
Abstract
The invention discloses a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof, wherein the strip-shaped geometric waveguide comprises a silicon substrate, a silicon dioxide lower cladding, a silicon nitride strip-shaped geometric structure and a polymer cladding, and comprises horizontal and vertical strip-shaped waveguides, namely an L type waveguide, a Z type waveguide and a multimode interferometer cascade L type waveguide.
Description
Technical Field
The invention relates to the field of optical communication and optical calculation, in particular to a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof.
Background
The polarization of light provides an important dimension for optical communication and optical computation, and the optical signal can be processed without changing the light intensity through the control of the polarization of light. The rotation and separation of light polarization are common techniques for polarization control, and in the existing documents, the thickness of a waveguide on one side is changed by carrying out secondary etching on a silicon-based optical waveguide, so that polarization conversion is realized.
Polarization rotation and beam splitting of three-dimensional integrated waveguide devices are a key technology for realizing flexible three-dimensional integrated optical circuits. In order to realize efficient polarization rotation and separation, a strip waveguide with large effective refractive index difference and large aspect ratio can be adopted, but the current research on the strip waveguide mainly focuses on a horizontal strip waveguide, and the three-dimensional space of a light chip is not fully utilized.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a polarization rotation beam splitter based on a strip-shaped geometric waveguide and a preparation method thereof, which fully utilize three-dimensional space by simultaneously utilizing horizontal and vertical strip-shaped waveguides and provide a new scheme for the conversion from a planar waveguide to a three-dimensional waveguide device. The strip geometry waveguide of the present invention has a large effective refractive index difference and a large aspect ratio, thus better rotating the polarization and separating different polarization signals into different positions. By flexibly combining the horizontal and vertical strip waveguides, the polarization rotation beam splitting device with various functions can be realized, and process errors can be compensated through thermal adjustment.
The purpose of the invention is realized by the following technical scheme:
a polarization rotation beam splitter based on a strip-shaped geometric waveguide comprises a silicon substrate, a silicon dioxide lower cladding layer, a silicon nitride strip-shaped geometric structure and a polymer cladding layer, wherein the strip-shaped geometric waveguide consists of a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide, and is L type waveguide, Z type waveguide or multimode interferometer (MMI) cascade L type waveguide;
the L type waveguide consists of a horizontal strip waveguide and a vertical strip waveguide, and the left side or the right side of the horizontal strip waveguide is connected with the upper side or the lower side of the vertical strip waveguide;
the Z-shaped waveguide consists of two horizontal strip waveguides and a vertical strip waveguide, the upper side of the vertical strip waveguide is connected with the left side or the right side of one horizontal strip waveguide, and the lower side of the vertical strip waveguide is connected with the right side or the left side of the other horizontal strip waveguide;
the MMI cascade L type waveguide comprises a 1 × 2MMI consisting of horizontal strip waveguides and a left L type waveguide and a right L type waveguide which are respectively connected to two output ports, wherein the left L type waveguide is that a vertical strip waveguide is on the left side of the horizontal strip waveguide in the viewed waveguide section when the waveguide is viewed from an output end to an input end, and the right L type waveguide is that the vertical strip waveguide is on the right side of the horizontal strip waveguide in the viewed waveguide section when the waveguide is viewed from the output end to the input end;
the strip geometry waveguide performs polarization rotation on input light and outputs different polarized light to different ports.
Further, it also includes a titanium heater.
Further, the titanium heater is arranged on the diagonal line of the silicon nitride strip-shaped geometric structure, and the distribution of the thermal field of the titanium heater is reduced along the diagonal line.
Furthermore, the number of the titanium heaters is two, one of the two titanium heaters is positioned on the upper side of the horizontal strip waveguide, and the other titanium heater is positioned on the left side or the right side of the vertical strip waveguide.
A method for preparing polarization rotation beam splitter, when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned on the upper side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and an inductive coupling plasma etching process, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching part of silicon nitride above a polymer cladding and part of silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip;
when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned at the lower side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and inductive coupling plasma etching processes, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching all silicon nitride above the polymer cladding and part of silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip. The invention has the following beneficial effects:
(1) the invention realizes the utilization of the three-dimensional space of the optical chip by the horizontal and vertical strip waveguides and realizes the conversion between the planar waveguide and the three-dimensional waveguide.
(2) By flexibly combining the horizontal and vertical strip waveguides, the polarization rotation beam splitting device with various functions can be realized.
(3) The invention realizes polarization rotation beam splitting through the strip geometric waveguide, and can better rotate polarization and separate different polarized light due to the large effective refractive index difference and the large height-width ratio of the strip waveguide. The aspect ratio of the vertical stripe waveguide in the prior art is limited by the top silicon thickness, which is about 2:1, and the aspect ratio of the vertical waveguide in the invention can reach 20:1 by atomic layer deposition processing.
(4) The present invention can compensate for process errors by diagonal heaters and horizontal/vertical heaters.
Drawings
FIG. 1 is a three-dimensional structure diagram of three strip-shaped geometric waveguides proposed by the present invention;
FIG. 2 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a horizontal slab waveguide;
FIG. 3 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a vertical slab waveguide;
FIG. 4 is a block diagram, eigenmode field schematic and electric field vector diagram of a right-hand L-type waveguide;
FIG. 5 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a left L type waveguide;
FIG. 6 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a Z-type waveguide;
FIG. 7 is a schematic diagram of the electric field vectors for polarization conversion of L-type and Z-type waveguides when inputting TM mode;
FIG. 8 is a schematic diagram of the electric field vectors for polarization conversion of L-type and Z-type waveguides when the TE mode is input;
FIG. 9 is a block diagram of an MMI cascade L type waveguide;
FIG. 10 is a schematic diagram of the mode field and electric field vectors at different locations of an MMI cascade L type waveguide;
FIG. 11 is a flow chart for the fabrication of a slab geometry waveguide with horizontal waveguides on the top side of the vertical waveguide;
FIG. 12 is a flow chart of the fabrication of a slab geometry waveguide with horizontal waveguides on the underside of the vertical waveguides;
fig. 13 shows two thermal tuning modes for a strip geometry waveguide.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments, and the objects and effects of the present invention will become more apparent, it being understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention.
The silicon nitride strip geometry waveguide comprises L type waveguide, Z type waveguide and MMI cascade L type waveguide which are composed of horizontal and vertical strip waveguides, and FIG. 1 is a three-dimensional structure diagram of three strip geometry waveguides provided by the invention.
FIGS. 2 and 3 are a block diagram, an eigenmode field schematic diagram and an electric field vector diagram of horizontal and vertical stripe waveguides, respectively, where W is1＝2μm，W2100 nm. The refractive index of the cladding polymer was 1.45 and the refractive index of the silicon nitride was 2. The operating center wavelength is 1550 nm. The effective refractive indexes of two eigenmodes of the strip waveguide are n respectively1＝1.474，n21.453. The symbols "+" and "-" in the mode field diagram indicate positive and negative phases, respectively.
FIGS. 4 and 5 are a block diagram, an eigenmode field schematic and an electric field vector diagram of a right and left L type waveguide, respectively, and L type waveguide having two eigenmode effective indices of refraction n, respectively1＝1.481，n2＝1.479。
FIG. 6 is a block diagram, an eigenmode field schematic and an electric field vector diagram of a Z-type waveguide. The Z-type waveguide has four eigenmodes in total, and the effective refractive indexes are respectively n1＝1.485，n2＝1.483，n3＝1.474，n41.453. As can be seen from the mode field diagram of the Z-type waveguide, the TE or TM mode input from the vertical stripe waveguide can be coupled only to eigenmodes 1 and 2, and not to modes 3 and 4.
FIGS. 7 and 8 are schematic diagrams of electric field vectors for polarization conversion when TM and TE modes are input from a vertical strip waveguide, respectively, which can explain the polarization conversion principle of a left L-type waveguide and a Z-type waveguide, in FIG. 7, x is the distance of light transmission in the waveguide, when x is 0, the input TM mode is coupled to eigen- modes 1 and 2, the two modes have a phase difference of 0 and their Ey components have opposite phases, and due to the difference in effective refractive index of the two eigen-modes, they generate a phase difference when transmitted in the waveguide, and when light is transmitted in the waveguide at a distance of LπThe two eigenmodes are pi out of phase. The resultant electric field vector is perpendicular to the electric field vector of the input light, and the output light is TE polarized, thereby realizing polarization conversion.
Lπ＝λ/2/(n1-n2)
Where λ is the wavelength in vacuum, n1And n2The effective refractive indices of the two eigenmodes, respectively.
In fig. 8, when x is 0, the input TE mode is coupled to eigen- modes 1 and 2, the two modes have a phase difference of pi and their Ey components have the same phase, as in fig. 7, over a transmission distance LπThe output light is then TM polarized.
When TM mode is inputted from the vertical strip waveguide of the L type waveguide on the right side, an electric field E is inputtedIDecomposition into eigenmodes1 and 2 Linear superposition of electric fields (E)I＝E2-E1) Over a transmission distance LπThen, an electric field E is outputO＝E2+E1Is TE polarization.
When TE mode is input from the vertical strip waveguide of the L type waveguide on the right side, an electric field E is inputI＝E2+E1Over a transmission distance LπThen, an electric field E is outputO＝E2-E1Is the TM polarization.
The output polarization state can also be analyzed according to the above method when input from the horizontal stripe waveguides of the left and right L type waveguides.
Based on the above analysis, both L-type and Z-type waveguides can achieve polarization conversion, and the difference between them is that L-type waveguide passes through a transmission distance L when inputting TM polarization from a vertical strip waveguideπThen, TE polarized light is output from the horizontal strip waveguide, and TM polarized light is input from the vertical strip waveguide through the Z-shaped waveguide via the transmission distance LπThe L type and Z type waveguides output TM polarized light from the vertical strip waveguide when TE polarization is input from the vertical strip waveguide, therefore, the L type and Z type waveguides output different polarized light to different output ports on the basis of polarization conversion, thereby realizing polarization conversion and beam splitting.
FIG. 9 is a block diagram of an MMI cascade L type waveguide in which the 1 × 2MMI is composed of horizontal strip waveguides LMMI＝83μm，WMMI12 μm and d 6 μm, after the input TE polarized light passes through 1 × 2MMI, it is divided into two beams of TE polarized light with the same power and phase, and enters into the left L type waveguide and the right L type waveguide, respectively, it can be seen from the analysis of polarization states in fig. 4 and 5 that the polarization rotation directions are opposite when the two beams of light are transmitted in the two L type waveguides, respectively, and fig. 10 is a mode field diagram and an electric field vector diagram of different positions of the MMI cascade L type waveguide.
The preparation process of the strip-shaped geometric waveguide is shown in fig. 11, and the main steps are as follows:
(1) firstly, depositing a silicon dioxide lower cladding on a silicon substrate by using Plasma Enhanced Chemical Vapor Deposition (PECVD);
(2) spin coating a cladding polymer on silica and curing;
(3) spin-coating photoresist on the polymer core layer, and forming a pattern through ultraviolet lithography and development;
(4) plating a layer of titanium on the photoresist by an electron beam thermal evaporation process;
(5) removing the photoresist through a metal stripping process, and leaving titanium as a metal mask layer for polymer etching;
(6) etching the polymer cladding with an Inductively Coupled Plasma (ICP) process;
(7) removing the metal mask layer by wet etching;
(8) processing a layer of silicon nitride with the thickness of 100nm on the cladding polymer by using atomic layer deposition (A L D), wherein the thickness of the silicon nitride on all surfaces of the cladding polymer is the same;
(9) processing photoresist on one side of the waveguide to protect an L type waveguide region;
(10) and etching redundant silicon nitride by ICP, removing the photoresist to leave L type silicon nitride, and removing the horizontal strip silicon nitride structure protected by the photoresist on the left side of the vertical strip waveguide by plating a layer of photoresist only in the region, but also reducing the width of the vertical strip waveguide, and compensating the width deviation of the horizontal and vertical strip waveguides by thermal regulation subsequently.
(11) A layer of cladding polymer was spun over the entire chip.
In order to process the L type waveguide in which the horizontal stripe waveguide is on the lower side of the vertical stripe waveguide, the steps (9) to (11) of the above manufacturing flow may be changed to the following flow (fig. 12).
(9) Processing photoresist on one side of the waveguide to cover the vertical strip waveguide and the horizontal strip waveguides on the upper side and the lower side;
(10) etching the photoresist and the silicon nitride to the position of a black dotted line in the figure, and removing the photoresist to leave L type silicon nitride;
(11) a layer of cladding polymer was spun over the entire chip.
In order to compensate the process error of the strip waveguide, two heating electrode structures of FIG. 13 can be respectively adopted, namely diagonal heating and horizontal/vertical heating, wherein the diagonal heating is to process a titanium heater on the diagonal of the L type waveguide, the distribution of the thermal field of the titanium heater is reduced along the diagonal, the horizontal/vertical heating is to process a titanium heater on the upper side of the horizontal strip waveguide and the left side of the vertical strip waveguide respectively, the heating current of the two electrodes is controlled respectively, the process deviation of the horizontal and vertical strip waveguides can be compensated, and the effective refractive index of the waveguide is reduced along with the refractive index of the cladding polymer when the temperature is increased because the optical field of the strip waveguide is mainly leaked in the cladding polymer.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and although the invention has been described in detail with reference to the foregoing examples, it will be apparent to those skilled in the art that various changes in the form and details of the embodiments may be made and equivalents may be substituted for elements thereof. All modifications, equivalents and the like which come within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (5)
1. The polarization rotation beam splitter based on the strip-shaped geometric waveguide is characterized in that the strip-shaped geometric waveguide comprises a silicon substrate, a silicon dioxide lower cladding, a silicon nitride strip-shaped geometric structure and a polymer cladding, the strip-shaped geometric waveguide consists of a horizontal strip-shaped waveguide and a vertical strip-shaped waveguide, and the strip-shaped geometric waveguide is L type waveguide, Z type waveguide or multimode interferometer cascade L type waveguide;
the L type waveguide consists of a horizontal strip waveguide and a vertical strip waveguide, and the left side or the right side of the horizontal strip waveguide is connected with the upper side or the lower side of the vertical strip waveguide;
the Z-shaped waveguide consists of two horizontal strip waveguides and a vertical strip waveguide, the upper side of the vertical strip waveguide is connected with the left side or the right side of one horizontal strip waveguide, and the lower side of the vertical strip waveguide is connected with the right side or the left side of the other horizontal strip waveguide;
the multimode interferometer cascade L type waveguide is composed of a 1 × 2 multimode interferometer composed of horizontal strip waveguides and a left L type waveguide and a right L type waveguide which are respectively connected to two output ports, wherein the left L type waveguide refers to that a vertical strip waveguide is on the left side of the horizontal strip waveguide in the viewed waveguide section when the waveguide is viewed from an output end to an input end, and the right L type waveguide refers to that the vertical strip waveguide is on the right side of the horizontal strip waveguide in the viewed waveguide section when the waveguide is viewed from the output end to the input end.
The strip geometry waveguide performs polarization rotation on input light and outputs different polarized light to different ports.
2. The strip geometry waveguide based polarization rotating beam splitter of claim 1 further comprising a titanium heater.
3. The polarization rotating beam splitter according to claim 2, wherein the titanium heaters are arranged on the diagonal of the silicon nitride strip geometry with the thermal field distribution decreasing along the diagonal.
4. The polarization rotating beam splitter according to claim 2, wherein the number of the titanium heaters is two, one is located at the upper side of the horizontal stripe waveguide, and the other is located at the left or right side of the vertical stripe waveguide.
5. A method of manufacturing a polarization rotating beam splitter according to claim 1,
when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned on the upper side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and an inductive coupling plasma etching process, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching part of silicon nitride above a polymer cladding and part of silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip;
when the horizontal waveguide in the silicon nitride strip geometry waveguide is positioned at the lower side of the vertical waveguide, the preparation process is as follows:
processing a polymer cladding rectangular structure by ultraviolet lithography and inductive coupling plasma etching processes, growing a layer of silicon nitride by atomic layer deposition, protecting a horizontal and vertical waveguide region by photoresist, etching all silicon nitride above the polymer cladding and part of silicon nitride above silicon dioxide by inductive coupling plasma, removing the photoresist, and spin-coating a layer of cladding polymer on the whole chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010269235.6A CN111474629B (en) | 2020-04-08 | 2020-04-08 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010269235.6A CN111474629B (en) | 2020-04-08 | 2020-04-08 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111474629A true CN111474629A (en) | 2020-07-31 |
| CN111474629B CN111474629B (en) | 2022-07-15 |
Family
ID=71750738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010269235.6A Active CN111474629B (en) | 2020-04-08 | 2020-04-08 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111474629B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1090637A (en) * | 1996-09-13 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
| US20060210232A1 (en) * | 2005-03-11 | 2006-09-21 | Seikoh Giken Co., Ltd. | Planar waveguide-based variable optical attenuator |
| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| CN101765796A (en) * | 2007-07-24 | 2010-06-30 | 英飞聂拉股份有限公司 | Polarization beam splitter-polarization rotator structure |
| CN103558661A (en) * | 2013-11-11 | 2014-02-05 | 东南大学 | Integrated polarization converter based on silicon-based L-shaped waveguide structure |
| CN103713357A (en) * | 2013-12-23 | 2014-04-09 | 绍兴中科通信设备有限公司 | Silicon-based optical waveguide polarization converter and preparation method thereof |
| CN104849803A (en) * | 2014-02-17 | 2015-08-19 | 株式会社藤仓 | Substrate-type waveguide element and optical modulator |
| CN105759348A (en) * | 2016-05-17 | 2016-07-13 | 东南大学 | Silica-based double-section type groove waveguide polarization rotator and polarization rotation method |
| CN107765366A (en) * | 2017-11-02 | 2018-03-06 | 中山大学 | A kind of silicon nitride polarization beam apparatus of asymmetrical shape and preparation method thereof |
-
2020
- 2020-04-08 CN CN202010269235.6A patent/CN111474629B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1090637A (en) * | 1996-09-13 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor device |
| US20060210232A1 (en) * | 2005-03-11 | 2006-09-21 | Seikoh Giken Co., Ltd. | Planar waveguide-based variable optical attenuator |
| CN101765796A (en) * | 2007-07-24 | 2010-06-30 | 英飞聂拉股份有限公司 | Polarization beam splitter-polarization rotator structure |
| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| CN103558661A (en) * | 2013-11-11 | 2014-02-05 | 东南大学 | Integrated polarization converter based on silicon-based L-shaped waveguide structure |
| CN103713357A (en) * | 2013-12-23 | 2014-04-09 | 绍兴中科通信设备有限公司 | Silicon-based optical waveguide polarization converter and preparation method thereof |
| CN104849803A (en) * | 2014-02-17 | 2015-08-19 | 株式会社藤仓 | Substrate-type waveguide element and optical modulator |
| CN105759348A (en) * | 2016-05-17 | 2016-07-13 | 东南大学 | Silica-based double-section type groove waveguide polarization rotator and polarization rotation method |
| CN107765366A (en) * | 2017-11-02 | 2018-03-06 | 中山大学 | A kind of silicon nitride polarization beam apparatus of asymmetrical shape and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111474629B (en) | 2022-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Su et al. | Silicon photonic platform for passive waveguide devices: materials, fabrication, and applications | |
| US6687446B2 (en) | Optical waveguide device and manufacturing method therefor | |
| Majumder et al. | Ultra-compact polarization rotation in integrated silicon photonics using digital metamaterials | |
| Garner et al. | Three-dimensional integrated optics using polymers | |
| Guerber et al. | Broadband polarization beam splitter on a silicon nitride platform for O-band operation | |
| CN113933941B (en) | Vertical coupling grating coupler based on binary blazed sub-wavelength grating and preparation method | |
| CN108693602B (en) | Silicon nitride three-dimensional integrated multi-microcavity resonant filter device and preparation method thereof | |
| US8442364B2 (en) | Optical waveguide circuit and manufacturing method of optical waveguide circuit | |
| CN113640913B (en) | LNOI (Low noise optical) fundamental mode spot converter directly coupled with single-mode fiber | |
| Degiron et al. | Directional coupling between dielectric and long-range plasmon waveguides | |
| Chang | Fundamentals of guided-wave optoelectronic devices | |
| US10935722B1 (en) | CMOS compatible material platform for photonic integrated circuits | |
| CN113848611A (en) | On-chip polarizer based on thin-film lithium niobate and manufacturing method thereof | |
| Zhao et al. | Compact lithium-niobate-on-insulator polarization rotator based on asymmetric hybrid plasmonics waveguide | |
| Wang et al. | A cost-effective edge coupler with high polarization selectivity for thin film lithium niobate modulators | |
| CN111758055B (en) | Waveguide type optical interferometer loop | |
| US6366730B1 (en) | Tunable optical waveguides | |
| CN111474629B (en) | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof | |
| Shen et al. | A design method for high fabrication tolerance integrated optical mode multiplexer | |
| CN110515156A (en) | A kind of optical coupling structure and preparation method thereof based on multilayer phase-matched waveguide | |
| AU3320399A (en) | Method of manufacturing indiffused optical waveguide structures in a substrate | |
| CN114355507B (en) | Micro-ring resonator based on inverted ridge type silicon dioxide/polymer mixed waveguide and preparation method thereof | |
| Robitaille et al. | Design and fabrication of low-loss polymer waveguide components for on-chip optical interconnection | |
| CN115685598A (en) | Waveguide structure with core-spun electro-optic material layer, preparation method and application | |
| Eldada et al. | Rapid direct fabrication of active electro-optic modulators in GaAs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |