CN103713357B - A kind of silicon-based optical waveguide polarization converter and preparation method thereof - Google Patents
A kind of silicon-based optical waveguide polarization converter and preparation method thereof Download PDFInfo
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- CN103713357B CN103713357B CN201310714245.6A CN201310714245A CN103713357B CN 103713357 B CN103713357 B CN 103713357B CN 201310714245 A CN201310714245 A CN 201310714245A CN 103713357 B CN103713357 B CN 103713357B
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Abstract
The present invention discloses a kind of silicon-based optical waveguide polarization converter, including silicon substrate, the silicon dioxide layer for being covered in silicon substrate upper surface, silicon ducting layer and bonding jumper layer, wherein, the cross section of the silicon ducting layer is L-shaped, its lower surface grows or is bonded on the upper surface of silicon dioxide layer, upper surface forms a high table top and a low table, and bonding jumper layer is covered on the low table of silicon ducting layer.By the low table integrated metal bar in asymmetric silicon ducting layer, so as to form surface plasma wave in silicon ducting layer, the effective refractive index that increased between two polarization modes is poor, it is inversely proportional to as the efficiency of polarization conversion is poor with pattern effective refractive index, so as to reduce significantly the length of polarization converter.Additionally, the bonding jumper layer of the present invention is prepared on the low table of asymmetric silicon waveguide, therefore can directly pass through evaporation of metal and stripping technology acquisition after the etching technics of low table, it is not necessary to extra alignment photoetching process, be thus susceptible to prepare.
Description
Technical field
The present invention relates to a kind of silicon-based optical waveguide polarization converter and preparation method thereof, more particularly to it is a kind of using surface etc.
Ion bulk wave lifts silicon substrate optical waveguide polarization converter of polarization conversion efficiency and preparation method thereof, belongs to optical communication technique neck
Domain.
Background technology
Optic communication is the communication technology with light wave as carrier wave, and compared to cable and radio etc., optic communication has great
Communication bandwidth, has irreplaceable status in today of multimedia and big data epoch.Optical fiber is long range optical transmission of information
Carrier, and the process of optical signal is more by all kinds of optical modules or photoelectric chip completing.In order to further improve light battery core
The integrated level of piece, the silicon-based optical waveguide device of high-index-contrast provide good technology platform.But it is different in this structure
The lightwave transmission characteristics of polarization state are different, and the optical polarization in optical fiber is random, and the coupling of both is necessarily caused
The extra polarization loss of related device and system.On research and development photoelectric chip, highly integrated polarization converter is to solve this problem
Approach.Mode Coupling technology is to realize one of major technique of polarization converter.This technology depends on asymmetrical beam waveguide
In the coupling of two patterns form the conversion of polarization, but two CGCMs in common silicon-based optical waveguide polarization converter
Effective refractive index difference is too little, causes to need the asymmetric waveguides of 100 microns realize enough polarization conversions, is unfavorable for
The Highgrade integration of photoelectric device chip.
In view of this, the present inventor is studied to this, specially develop a kind of silicon-based optical waveguide polarization converter and its
Thus preparation method, this case produce.
The content of the invention
It is an object of the invention to provide a kind of silicon-based optical waveguide polarization converter and preparation method thereof, by asymmetrical silicon
The structure of ducting layer, and the bonding jumper layer being covered on silicon ducting layer, realize the larger effective refractive index of two polarization modes
Difference, so as to obtain higher polarization conversion efficiency.
To achieve these goals, solution of the invention is：
A kind of silicon-based optical waveguide polarization converter, including silicon substrate, the silicon dioxide layer for being covered in silicon substrate upper surface, silicon
Ducting layer and bonding jumper layer, wherein, the cross section of the silicon ducting layer is L-shaped, and its lower surface grows or is bonded in titanium dioxide
On the upper surface of silicon layer, upper surface forms a high table top and a low table, and bonding jumper layer is covered on the low table of silicon ducting layer.
Preferably, the width of the silicon ducting layer is 250-600 nanometers（The width sum of i.e. high table top and low table is
250-600 nanometers）, it is highly 250-600 nanometers, above-mentioned silicon ducting layer width ensures two polarization modes not with the selection of height
Cut-off.
Preferably, the strip width of bonding jumper layer is consistent with the width of silicon ducting layer low table, 80-250 nanometers it
Between, bonding jumper layer can be the one of which of gold, silver, aluminum or copper, and bonding jumper thickness degree is 30-100 nanometers.
Preferably, the height of above-mentioned silicon ducting layer low table is 100-300 nanometers.
Preferably, above-mentioned silicon-based optical waveguide polarization converter length is 1-10 microns.
When above-mentioned silicon-based optical waveguide polarization converter works, the silicon-based optical waveguide polarization converter two ends are by with height and width
The symmetrical silicon substrate fiber waveguide of degree enters into above-mentioned silicon substrate optical waveguide polarization conversion as input and output, a micron guided wave mode
Device, while inspiring two patterns, due to the asymmetry of silicon ducting layer, light wave in transmitting procedure, send out by above-mentioned two pattern
, that is, there is the conversion for polarizing in raw coupling.Due to the low table integrated metal bar of silicon ducting layer, so as to form table in silicon ducting layer
Surface plasma ripple, the effective refractive index that increased between two polarization modes are poor, after transmission 1-10 microns, just have accumulated π
Phase place change, realizes the conversion of polarization.
The preparation method of above-mentioned silicon-based optical waveguide polarization converter, comprises the steps：
（1）Photoresist is coated on the soi wafer；
（2）It is exposed with litho machine；
（3）Developer solution is developed with photoresist, obtains the figure on photoresist；
（4）The figure on photoresist is transferred to into silicon using dry etch process, the silicon ripple with a high table top is formed
Conducting shell；
（5）Remove remaining photoresist using glue-dispenser or oxygen plasma etch；
（6）Photoresist is coated on the high table top of silicon ducting layer；
（7）Alignment exposure is carried out with litho machine；
（8）Developer solution is developed with photoresist, and the figure on photoresist is obtained in silicon waveguide；
（9）The figure on photoresist is transferred to into silicon using dry etch process, the low table of silicon ducting layer is formed；
（10）Metallic film is prepared by metallic film evaporation technology on the sample low table after previous step technique；
（11）The bonding jumper layer being only attached on silicon waveguide low table is obtained using stripping technology.
Compared with prior art, it is an advantage of the current invention that：By the low table integrated metal in asymmetric silicon ducting layer
Bar, so as to form surface plasma wave in silicon ducting layer, the effective refractive index that increased between two polarization modes is poor, due to
The efficiency of polarization conversion is poor with pattern effective refractive index to be inversely proportional to, so as to reduce significantly the length of polarization converter.
Additionally, the bonding jumper layer of the present invention is prepared on the low table of asymmetric silicon waveguide, therefore can be in low table
Directly pass through evaporation of metal after etching technics and stripping technology is obtained, it is not necessary to extra alignment photoetching process, be thus susceptible to system
It is standby.
The present invention is described in further detail below in conjunction with drawings and the specific embodiments.
Description of the drawings
Fig. 1 is the present embodiment silicon-based optical waveguide polarization converter cross-sectional view；
Fig. 2 is the silicon wave-guide polarization pattern field pattern of the present embodiment silicon-based optical waveguide polarization converter；
Fig. 3 is another silicon wave-guide polarization pattern field pattern of the present embodiment silicon-based optical waveguide polarization converter；
Fig. 4 is the preparation method flow chart of silicon-based optical waveguide polarization converter of the present invention.
Specific embodiment
As shown in figure 1, a kind of silicon-based optical waveguide polarization converter, including silicon substrate 1, it is covered in 1 upper surface of silicon substrate
Silicon dioxide layer 2, silicon ducting layer 3 and bonding jumper layer 4, wherein, the cross section of the silicon ducting layer 3 is L-shaped, and its following table is looked unfamiliar
Length is bonded on the upper surface of silicon dioxide layer 2, and upper surface forms a high table top 31 and a low table 32, and bonding jumper layer 4 covers
Cover on the low table 32 of silicon ducting layer 3.By the 32 integrated metal bar of low table in asymmetric silicon ducting layer 3, so as in silicon
Surface plasma wave is formed in ducting layer 3, the effective refractive index that increased between two polarization modes is poor, due to polarization conversion
Efficiency is poor with pattern effective refractive index to be inversely proportional to, so as to reduce significantly the length of polarization converter.
In the present embodiment, the Breadth Maximum of above-mentioned silicon ducting layer 3 is 500 nanometers, and maximum height is 500 nanometers, wherein,
31 width of high table top is 300 nanometers, and 32 width of low table is 200 nanometers, 300 nanometers from 3 bottom surface of silicon ducting layer of low table 32, gold
4 material of category bar layer is gold, 200 nanometers of width, 50 nanometers of thickness.The length of whole silicon-based optical waveguide polarization converter is 2.93 micro-
Rice.
When the present embodiment works, the silicon-based optical waveguide polarization converter two ends are by the symmetrical silicon substrate light with height and width
Waveguide enters into the silicon substrate optical waveguide polarization and changes as input and output, 1.55 microns of guided wave modes of a horizontal polarization
Device, while inspiring two patterns that Fig. 2 and Fig. 3 are shown respectively, wherein figure 2 show the present embodiment silicon substrate optical waveguide polarization and turns
One polarization mode field distribution of parallel operation, it can be seen that mode field is concentrated in silicon ducting layer, and as asymmetric waveguides are tied
Structure, its mode distributions are also asymmetric, and the effective refractive index of its pattern is 2.92.Fig. 3 shows the present embodiment silicon substrate fiber waveguide
Another polarization mode field distribution of polarization converter, it can be seen that mode field is concentrated in silicon ducting layer, and due to non-right
Claim waveguiding structure, its mode distributions is also asymmetric, and the effective refractive index of its pattern is 2.39.
Due to the asymmetry of waveguide, in transmitting procedure, coupling in above-mentioned two pattern to light wave there is, that is, polarization occurs
Conversion.As the effective refractive index difference Δ n of two patterns in this waveguide reaches 0.53, after 1.46 microns of distances are transmitted, just
π phase place changes are have accumulated, the conversion of polarization is realized.By contrast, two patterns of fiber waveguide for not having bonding jumper are effectively reflected
Rate difference is only 0.1, it is therefore desirable to which at least 7.75 microns could obtain polarization conversion.
The effective refractive index difference of waveguide mode is obtained by numerical algorithm, can adopt professional business computed in software in practicality.
Polarization conversion efficiency P is proportional to sin2(π L/2Lc), wherein Lc=λ/2 Δ n, represent that two patterns have accumulated π phase place changes.Can
See that polarization conversion efficiency reaches maximum as L=Lc.Therefore for 1.55 microns of communication band, can be obtained according to this formula,
As Δ n=0.53, Lc=1.46 microns obtain maximum polarization conversion；As Δ n=0.1, Lc=7.75 microns obtain maximum inclined
Shake conversion.
The preparation method of above-mentioned silicon-based optical waveguide polarization converter, as shown in figure 4, comprising the steps：
（1）Photoresist is coated on the soi wafer, and SOI wafer of the present invention can be the commodity of direct purchase, on
There have been silicon substrate and silicon dioxide layer in face；
（2）It is exposed with litho machine；
（3）Developer solution is developed with photoresist, obtains the figure on photoresist；
（4）The figure on photoresist is transferred to into silicon using dry etch process, the silicon ripple with a high table top is formed
Conducting shell；
（5）Remove remaining photoresist using glue-dispenser or oxygen plasma etch；
（6）Photoresist is coated on the high table top of silicon ducting layer；
（7）Alignment exposure is carried out with litho machine；
（8）Developer solution is developed with photoresist, and the figure on photoresist is obtained in silicon waveguide；
（9）The figure on photoresist is transferred to into silicon using dry etch process, the low table of silicon ducting layer is formed；
（10）Metallic film is prepared by metallic film evaporation technology on the sample low table after previous step technique；
（11）The bonding jumper layer being only attached on silicon waveguide low table is obtained using stripping technology.
The bonding jumper layer of the present embodiment is prepared on the low table of asymmetric silicon waveguide, therefore can be in the etching of low table
Directly pass through evaporation of metal after technique and stripping technology is obtained, it is not necessary to extra alignment photoetching process, be thus susceptible to prepare.
The product form and style of above-described embodiment and schema the non-limiting present invention, any art it is common
Appropriate change or modification that technical staff is done to which, all should be regarded as the patent category without departing from the present invention.
Claims (5)
1. a kind of silicon-based optical waveguide polarization converter, it is characterised in that：Including silicon substrate, it is covered in the dioxy of silicon substrate upper surface
SiClx layer, silicon ducting layer and bonding jumper layer, wherein, the cross section of the silicon ducting layer is L-shaped, and its lower surface grows or is bonded
On the upper surface of silicon dioxide layer, upper surface forms a high table top and a low table, and bonding jumper layer is covered in silicon ducting layer
On low table；The strip width of bonding jumper layer is consistent with the width of silicon ducting layer low table, between 80-250 nanometers；It is described
The width of silicon ducting layer is 250-600 nanometers, is highly 250-600 nanometers.
2. a kind of silicon-based optical waveguide polarization converter as claimed in claim 1, it is characterised in that：The bonding jumper layer for gold,
The one of which of silver, aluminum or copper, bonding jumper thickness degree are 30-100 nanometers.
3. a kind of silicon-based optical waveguide polarization converter as claimed in claim 1, it is characterised in that：Above-mentioned silicon ducting layer low table
Height be 100-300 nanometers.
4. a kind of silicon-based optical waveguide polarization converter as claimed in claim 1, it is characterised in that：Above-mentioned silicon substrate optical waveguide polarization
Transducer length is 1-10 microns.
5. a kind of preparation method of silicon-based optical waveguide polarization converter, it is characterised in that comprise the steps：
1）Photoresist is coated on the soi wafer；
2）It is exposed with litho machine；
3）Developer solution is developed with photoresist, obtains the figure on photoresist；
4）The figure on photoresist is transferred to into silicon using dry etch process, the silicon ducting layer with a high table top is formed；
5）Remove remaining photoresist using glue-dispenser or oxygen plasma etch；
6）Photoresist is coated on the high table top of silicon ducting layer；
7）Alignment exposure is carried out with litho machine；
8）Developer solution is developed with photoresist, and the figure on photoresist is obtained in silicon waveguide；
9）The figure on photoresist is transferred to into silicon using dry etch process, the low table of silicon ducting layer is formed；
10）Metallic film is prepared by metallic film evaporation technology on the sample low table after previous step technique；
11）The bonding jumper layer being only attached on silicon waveguide low table is obtained using stripping technology.
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| CN105319644B (en) * | 2014-07-04 | 2018-12-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Waveguide type polarization converter and preparation method thereof |
| CN106154413B (en) * | 2015-04-21 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Optical waveguide |
| JP6728997B2 (en) * | 2016-06-01 | 2020-07-22 | 日本電気株式会社 | Optical waveguide and optical integrated circuit |
| CN111474629B (en) * | 2020-04-08 | 2022-07-15 | 浙江西湖高等研究院 | Polarization rotation beam splitter based on strip-shaped geometric waveguide and preparation method thereof |
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| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
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| US7149373B2 (en) * | 2004-02-02 | 2006-12-12 | Lucent Technologies Inc. | Active/passive monolithically integrated channel filtering polarization splitter |
| US7099548B2 (en) * | 2004-03-02 | 2006-08-29 | Jds Uniphase Corporation | Reduction of polarization dependence in planar optical waveguides |
| US8131120B2 (en) * | 2008-08-19 | 2012-03-06 | Alcatel Lucent | Planar polarization splitter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320113A (en) * | 2008-07-15 | 2008-12-10 | 浙江大学 | Waveguide type polarization mode converter |
| CN103018832A (en) * | 2012-12-31 | 2013-04-03 | 江苏大学 | Polarization beam splitter |
| CN203673098U (en) * | 2013-12-23 | 2014-06-25 | 绍兴中科通信设备有限公司 | Silicon substrate optical waveguide polarization converter |
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Denomination of invention: A silicon-based optical waveguide polarization converter and its preparation method Effective date of registration: 20220803 Granted publication date: 20170405 Pledgee: Agricultural Bank of China Co., Ltd. Shaoxing Paojiang Sub-branch Pledgor: SHAOXING ZKTEL EQUIPMENT Co.,Ltd. Registration number: Y2022330001592 |
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