CN105204112B - Wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip - Google Patents
Wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip Download PDFInfo
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- CN105204112B CN105204112B CN201510653491.4A CN201510653491A CN105204112B CN 105204112 B CN105204112 B CN 105204112B CN 201510653491 A CN201510653491 A CN 201510653491A CN 105204112 B CN105204112 B CN 105204112B
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/105—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type having optical polarisation effects
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Abstract
The invention discloses wavelength on a kind of silicon chip and polarization mixing multiplexing demultiplexing device, including substrate, and multiple input waveguides, multiple output waveguides, bus waveguide, multiple slot type micro-loops and multiple hybrid plasma micro-loops are provided with institute's substrate；In input, input signal is multiplexed to bus waveguide carries out hybrid multiplex transmission respectively by each input waveguide by a slot type micro-loop or hybrid plasma micro-loop；The signal transmitted in output end, bus waveguide after hybrid multiplex is demultiplexed to each output waveguide through a slot type micro-loop or hybrid plasma micro-loop respectively；Input is identical with the quantity of the slot type micro-loop of output end, and input is identical with the quantity of the hybrid plasma micro-loop of output end.The Transmission system scalability that hybrid multiplex/demultiplexer provided by the invention has the advantages that efficiency of transmission is high, cross-couplings and crosstalk are low, compact-sized, manufacture difficulty is low, is formed is high.
Description
Technical field
The present invention relates to integrated optics technique field, and in particular to wavelength and polarization mixing multiplexing/solution on a kind of silicon chip
Multiplexer.
Background technology
In recent years, the key technology of on-chip optical interconnection-integreted phontonics loop (Photonic Integrated
Circuits, PICs) research achieve significant progress.PICs can effectively break through the function limitation of discrete component, will not
The photonic device of congenerous single-chip integration on same backing material, the processing function and the speed of service for making chip greatly improve,
Power consumption is substantially reduced, and size is substantially reduced, and can greatly improve the yield rate and reliability of chip.During PICs is built,
Silicon semiconductor material shows many advantages, wherein most prominent advantage is can to use ripe standard CMOS process, with reality
The low cost of existing silicon photonic device, mass production, and can realize that silicon photonic device mixes collection with the monolithic of silicon microelectronic component
Into so as to develop extensive or even ultra-large PICs.In utilization photonic device structure Large Copacity, with a large bandwidth and at a high rate
And during inexpensive on-chip optical interconnection, all kinds of multiplexing technologies, such as wavelength-division multiplex, palarization multiplexing, space division multiplexing etc., it is key therein
Place.For tackle upcoming vast capacity, ultra high bandwidth, high speed on-chip optical interconnection demand, consider simultaneously using a variety of
Multiplexing technology is imperative to realize mixing on chip multiplexing transmission.
Recently, two kinds of novel waveguiding structure-groove waveguides and hybrid plasma waveguide were respectively at 2004 and 2008
Seminar is taught by Cornell University Michal Lipson and University of California Berkeley Zhang Xiang professors seminar carries in succession
Go out, receive the extensive concern of researcher.Wherein groove waveguides are by the silicon-based nano of two high index of refraction closely leaned on distribution differences
Line is formed, and centre forms nanometer groove, according to the boundary relation of electromagnetic field, on the interface being distributed perpendicular to high index-contrast,
Electric field component will appear from discontinuity and is remarkably reinforced in low-refraction groove.Hybrid plasma waveguide is in generic media ripple
The outside led introduces metal level and is separated them by one layer of thin low-index material, and this waveguiding structure causes its institute
The light patterns that can be carried have Medium Wave Guide simultaneously between generic media waveguide and metallic plasma waveguide
Low loss characteristic and plasma filled waveguide strong mould field limitation capability.Currently with both waveguide designs and manufacture many
Photonic device has been reported, such as：Full optical modulator, photoswitch, coupler, beam splitter, sensor etc..In addition, both waveguides
With being substantially better than the strong polarization correlated of common silica-based nanowire so that the coupling of pattern also has polarization selectivity, simultaneously
With reference to micro-ring resonator, it is possible to achieve the hybrid multiplex of wavelength and polarization transmits on piece.And wherein the most key is that mixing is multiple
With the research of device and demultiplexer, therefore design high-performance, wavelength and polarization mixing multiplexing/solution on compact-sized silicon chip
Multiplexer, and then realize that mixing on chip multiplexing transmission seems particularly significant.There is presently no can realize mixing on chip multiplexing biography
Defeated equipment.
The content of the invention
Goal of the invention：For overcome the deficiencies in the prior art, it can realize that mixing on chip is multiplexed the invention provides one kind
Wavelength and polarization mixing multiplexing demultiplexing device on the silicon chip of transmission.
Technical scheme：Wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip, including substrate, on institute's substrate
Provided with multiple input waveguides, multiple output waveguides, bus waveguide, multiple slot type micro-loops and multiple hybrid plasma micro-loops；
Input signal is multiplexed to bus by input, each input waveguide by a slot type micro-loop or hybrid plasma micro-loop respectively
Waveguide carries out hybrid multiplex transmission；The signal transmitted in output end, bus waveguide after hybrid multiplex is micro- through a slot type respectively
Ring or hybrid plasma micro-loop are demultiplexed to each output waveguide；Input is identical with the quantity of the slot type micro-loop of output end,
Input is identical with the quantity of the hybrid plasma micro-loop of output end.
Further, described slot type micro-loop includes two nano-rings closely leaned on；Described hybrid plasma micro-loop bag
Include and be from bottom to top followed successively by dielectric ring, low-refraction ring type filling and metal cover ring.
Further, the bus waveguide is single bus waveguide.
Further, the spacing in the slot type micro-loop between two nano-rings is 80nm~120nm.Such structure it is inclined
Correlation of shaking and wavelength selectivity are stronger.
Further, the dielectric ring in the hybrid plasma micro-loop is that the thickness of dielectric ring is made of silicon materials
220nm；Low-refraction ring type filling is made of silica or silicon nitride material, the thickness of low-refraction ring type filling for 20nm~
50nm；Metal cover ring is made of silver, aluminium or copper product, the thickness of metal cover ring is 100nm~200nm.Using this
The crosstalk mutual in transmitting procedure of multi-wavelength that the structure of sample is transmitted in bus waveguide, multi-polarization state signal is relatively low,
It is also weaker from the cross-couplings of different micro-loops.
Further, the outer radius of the slot type micro-loop is 3.0 μm~3.5 μm, and the outer radius of hybrid plasma micro-loop is
2.0 μm~2.3 μm.
Beneficial effect：Compared with prior art, technical scheme has the advantages that：
1st, wavelength is low with efficiency high, cross-couplings and crosstalk that polarization mixing is multiplexed.Relative to being commonly based on silicon nanowires
The micro-ring resonator of design, by the present invention in that with the stronger polarization correlated and slot type of wavelength selectivity and mixing etc. from
The micro-ring resonator of daughter waveguide design, it is possible to achieve the function of efficient hybrid multiplex and demultiplexing so that in bus waveguide
It is middle can simultaneous transmission multi-wavelength and multi-polarization state mixed signal, can be greatly enhanced existing on-chip optical interconnection transmission capacity,
Bandwidth and speed.In addition, based on strong polarization correlated, the cross-couplings of different interchannels and crosstalk also will be reduced effectively.
2nd, regulation, conversion and the alignment of wavelength are convenient.Based on the thermo-optical coeffecient that silicon materials are larger, heated by electrodes can be passed through
Mode is adjusted or compensated because resonance wavelength caused by the scale error of device manufacturing processes is drifted about, so as to by resonance wavelength and always
The channel wavelength of wavelength-division multiplex is accurately aligned in line, improves the integral working of device.
3rd, the scalability of Transmission system is high.Each slot type micro-loop or hybrid plasma are micro- in technical solution of the present invention
Ring all corresponding wavelength and polarization signal all the way, by the quantity i.e. upgrading of feasible system and expansion that suitably increase micro-ring resonator
Hold, therefore scalability is substantially better than existing multiplexing transmission mode.
4th, flexible design, easy to use.Hybrid multiplex device in the present invention is similar with the operation principle of demultiplexer, multiplexing
Device is that the input signal of multi-wavelength and multi-polarization state is multiplexed to bus waveguide to carry out hybrid multiplex transmission, and demultiplexer is will be total
Multiplexed signals in line waveguide is respectively outputted to different output ports by different wavelength and polarization state, carries out follow-up optical signal
Processing；In addition the symmetrical configuration of multiplexing demultiplexing device of the invention, input and output port can overturn in actual use to be made
With the performance without influenceing device, further improving flexibility and the convenience of device design and use.
5th, it is compact-sized, processing and manufacturing cost it is cheap.The present invention is using the silicon-on-insulator material with high index-contrast
Make above-mentioned device so that the overall package size of device is smaller, is easy to further integrate structure high-performance, more with other devices
The extensive PIC photon integrated circuit for on-chip optical interconnection of function.The manufacture of the device is fully compatible with existing ripe mark simultaneously
Quasi- CMOS technology, beneficial to the inexpensive mass production for realizing device.Based on these beneficial effects and advantage, the device is integrated
There is potential application value in photonic propulsion particularly silicon based photon field.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the cross-sectional view of silicon substrate slot type micro-ring resonator in the present invention；
Fig. 3 is the cross-sectional view of silicon substrate hybrid plasma micro-ring resonator in the present invention；
Fig. 4 is the principal component mode distributions figure of input, output waveguide and bus waveguide structure transverse electric mode in the present invention；
Fig. 5 is the principal component mode distributions figure of input, output waveguide and bus waveguide structure TM mode in the present invention；
Fig. 6 is that bracket groove of the present invention declines the principal component mode distributions figure of ring structure transverse electric mode；
Fig. 7 is that bracket groove of the present invention declines the principal component mode distributions figure of ring structure TM mode；
Fig. 8 is the principal component mode distributions figure of hybrid plasma micro-loop structure transverse electric mode in the present invention；
Fig. 9 is the principal component mode distributions figure of hybrid plasma micro-loop structure transverse electric mode in the present invention；
Figure 10 be the present invention in hybrid plasma micro-ring resonator the straight-through output port of de-multiplex section transmission
The variation relation of rate and operation wavelength；
Figure 11 be the present invention in hybrid plasma micro-ring resonator the lower road output port of de-multiplex section transmission
The variation relation of rate and operation wavelength.
In figure：Input waveguide 1,2,3,4, output waveguide 5,6,7,8, bus waveguide 9, slot type micro-ring resonator 10,11,
16th, 17, hybrid plasma micro-ring resonator 12,13,14,15, form two nano-rings closely leaned on of slot type micro-ring resonator
101st, 102 the dielectric ring 121, low-refraction ring type filling 122, metal cover ring of hybrid plasma micro-ring resonator, are formed
123rd, substrate 18, covering 19.
Embodiment
Further explanation is done to the present invention below in conjunction with the accompanying drawings.
As shown in Figure 1, Figure 2 and Figure 3, wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip, including substrate 18
With covering 19, on substrate 18 be provided with four input waveguides 1,2,3,4, four output waveguides 5,6,7,8, single bus waveguide 9,
Four slot type micro-loops 10,11,16,17 and four hybrid plasma micro-loops 12,13,14,15；In input, four incoming waves
1,2,3,4 are led to polarize by multi-wavelength and by two slot type micro-loops 10,11 and two hybrid plasma micro-loops 12,13 respectively more
The input signal of state is multiplexed to bus waveguide 9 and carries out hybrid multiplex transmission；In output end, pass through two hybrid plasma micro-loops
14th, 15 and two slot type micro-loops 16,17 by the hybrid multiplex signal in bus waveguide 9 demultiplex respectively to four output waveguides 8,
7th, 6,5 exported.Wherein, the quantity of input waveguide, output waveguide, slot type micro-loop and hybrid plasma micro-loop can basis
Demand is increased, wherein, enter end it is identical with the quantity need of the slot type micro-loop of output end, mixing of input and output end etc. from
The quantity of daughter micro-loop needs identical.It is micro- by increasing corresponding input waveguide, output waveguide, slot type micro-loop and hybrid plasma
The quantity of ring can improve the transmission capacity of single bus waveguide.Wherein, input waveguide, output waveguide and bus waveguide are silicon
Nanowire Waveguides.
Wherein, four slot type micro-loops 10,11,16,17 are made up of two nano-rings closely leaned on 101,102；Wherein, nanometer
Spacing between ring 101,102 is 80nm~120nm, and the outer radius of slot type micro-loop is 3.0m~3.5m.Four mixing plasmas
The structure of body micro-loop 12,13,14,15 is from bottom to top followed successively by dielectric ring 121, low-refraction ring type filling 122 and metal cover ring
123；Wherein, dielectric ring is that the thickness of dielectric ring is 220nm made of silicon materials；Low-refraction ring type filling be silica or
Made of silicon nitride material, the thickness of low-refraction ring type filling is 20nm~50nm；Metal cover ring is silver, aluminium or copper product
Manufactured, the thickness of metal cover ring is 100nm~200nm, the outer radius of hybrid plasma micro-loop is 2.0m~2.3m.
Transverse electric mode and TM mode in input, input signal pass through hybrid plasma micro-loop 12,13 and groove respectively
The ring 10,11 that declines is multiplexed to bus waveguide 9；Transverse electric mode and TM mode in output end, bus waveguide 9 also pass through mixing respectively
Plasma micro-loop 14,15 and slot type micro-loop 16,17 are demultiplexed to each output waveguide.
The process of transmission of the optical signal in hybrid multiplex/demultiplexer that the present embodiment provides is：It is horizontal comprising multi-wavelength
The incident optical signal of electric mould (hereinafter referred to as TE) enters from input waveguide 3,4, comprising multi-wavelength TM mode (hereinafter referred to as
TM incident optical signal) enters from input waveguide 1,2, and then TE and TM moulds input signal passes through hybrid plasma micro-loop respectively
Resonator 12,13 and slot type micro-ring resonator 10,11 resonance are coupled into bus waveguide 9 and carry out hybrid multiplex transmission.Due to mixing
The TE moulds of plasma micro-loop are similar to the TE moulds of the input waveguide of its both sides and bus waveguide, therefore the TE moulds inputted can be high
Effect is coupled into micro-loop and entered by the resonance characteristic of hybrid plasma micro-loop in its resonance wave strong point to bus waveguide 9 on road
Row multiplexing transmission；But the TM moulds of input are because its pattern with the TM moulds of hybrid plasma micro-loop differs larger, admittedly can not be by this
Hybrid plasma micro-loop is coupled to bus waveguide 9.Therefore, input TM moulds need it is humorous by slot type micro-ring resonator 10,11
Shake and be coupled to bus waveguide 9, because the TM moulds of slot type micro-loop are similar with the TM moulds of the silicon nanowires waveguide of its both sides, easily
In realize resonance couple.At demultiplexing end, multi-wavelength and multi-polarization state hybrid multiplex signal in bus waveguide 9 pass through solution respectively
TE the and TM moulds of hybrid plasma micro-ring resonator 14,15 and slot type micro-ring resonator 16,17 the output respective wavelength of multiplexing
Signal is to output waveguide 8,7 and 6,5.Multi-wavelength and multi-polarization state can be realized in single bus waveguide in this way
Hybrid multiplex transmits, and can effectively improve capacity, bandwidth and the speed of Transmission system, while can also reduce the chi of Transmission system on piece
Very little, power consumption, complexity and manufacturing cost, will be the trend of on-chip optical interconnection development.
It is designed and makes using the material compatible with existing CMOS technology for above-mentioned hybrid multiplex/demultiplexing device
Make, aoxidize the buried silicon dioxide layer that a layer thickness is about 3 μm on a silicon substrate first, then pass through plasma-reinforced chemical gas
The silicon that (PECVD) a layer thickness is about 220nm is mutually deposited, or the making of practical devices is carried out directly on business silicon chip.Profit
The pattern of device is written directly to scribble on the silicon chip of photoresist with beamwriter lithography, then carries out reactive ion etching (RIE),
Pattern in photoresist is further write in silicon chip and cleaning silicon chip is repeatedly to remove unnecessary photoresist.Due to mixing etc. from
Waveguiding structure is different in vertical direction for daughter micro-loop, therefore single photoetching process can not produce whole device, it is necessary to multistep
Photoetching or alignment, so as to sequentially form the low-refraction ring type filling of hybrid plasma micro-loop (such as：Silica) and metal
Cover ring (such as copper, aluminium, silver), finally adopted in the outside covering layer of silicon dioxide protective layer of device, the growth of wherein film
With PECVD, etching using RIE, device surface planarization using chemically mechanical polishing (CMP).
Such as Fig. 4, shown in Fig. 5, transverse electric mode is distributed mainly on the sandwich layer of waveguide, and at core bag interface in the horizontal direction
There is transition (transition is relevant with the boundary values of electromagnetic field)；TM mode is slightly below transverse electric mode by the restricted of waveguide, mainly due to ripple
The thickness led is less than the width of waveguide, transition also occurs at core bag interface in vertical direction in addition.Such as Fig. 6, Fig. 7 institutes
Show, wherein transverse electric mode is greatly limited in the nanometer groove that two nano wires closely leaned on are formed, and larger change occurs in pattern
Change, light field focusing and the restriction ability of sub-micron even nanometer scale can be realized；TM mode then with it is corresponding input, output wave
It is little to lead difference, therefore in slot type micro-ring resonator, according to coupled mode and resonance coupled wave theory, the TM mode only inputted is
It can produce with slot type micro-loop and efficiently couple, and up/down road output is carried out in resonance wave strong point.As shown in Figure 8, Figure 9, transverse electric mode
The Medium Wave Guide of bottom is distributed mainly on, is influenceed by top metal coating smaller so that it and input, the horizontal stroke of output waveguide
Electric mould is closely similar, therefore in hybrid plasma micro-ring resonator, the transverse electric mode of input can be micro- with hybrid plasma
Ring produces efficient coupling, and is exported in resonance wave strong point；And TM mode is because by top metal coating and low refraction
The influence of rate packed layer, its mould field energy integrated distribution is in the packed layer of low-refraction, with corresponding input, output medium waveguide
Differ greatly, therefore the conversion for realizing both mould fields can not be coupled by waveguide.Strong based on both special waveguide structures
Polarization selectivity, the transverse electric mode only inputted (TM mode) could be coupled by hybrid plasma micro-loop (slot type micro-loop) resonance
Hybrid multiplex transmission is carried out to bus waveguide, or is demultiplexed from bus waveguide by multiplexed signals to each output waveguide, so as to
Cross-couplings and the crosstalk of different interchannels are effectively reduced, the device performance obtained is micro- better than being formed using common nano wire
Ring structure.
Such as Figure 10, shown in Figure 11, TE moulds generate obvious resonance phenomena, and TM moulds fail because waveguide mode differs greatly
Produce effective resonance coupling.Being calculated in diagram in wave-length coverage (1.5 μm~1.6 μm), there are three resonance wavelengths in TE moulds,
One of them is located exactly at the best effort window of optic communication, i.e., at 1550nm wavelength, corresponding free spectral range in addition
It is larger, close to 40nm.For the resonance wavelength of TE mouldsC, according to phase relation, it is necessary to meet relationship below：
In formula (1) L be hybrid plasma micro-loop girth, neffFor the effective refractive index of its pattern, m is one any
Positive integer, if for the resonance wavelength of a certain fixation, m is bigger, and corresponding micro-loop is also sized to very big.Further for demultiplexing
Slot type micro-ring resonator in device also has the variation relation of similar transfer rate and operation wavelength, and difference is only TM moulds ability
Obvious resonance coupling phenomenon is produced, TE moulds can not produce effective coupling because pattern mismatches, accordingly in lower road port
Resonance is exported into TM moulds.Hybrid plasma micro-ring resonator and slot type micro-ring resonator are used respectively in the multiplexer of input
To be multiplexed TE and TM moulds to bus waveguide, their transfer rate also has similar resonance special with the variation relation of operation wavelength
Property.For wavelength on silicon chip and polarization mixing multiplex transmission system, the multiplexer of input and the demultiplexing of output end
Their function of device is opposite, but the design of specific device is similar or like, the only biography because of optical signal wherein
Defeated direction is different, and then generates different laser propagation effects.In addition, based on strong polarization correlated, passed in bus waveguide
The crosstalk mutual in transmitting procedure of defeated multi-wavelength, multi-polarization state signal is relatively low, the cross-couplings from different micro-loops
Weaker, therefore, the system efficiency of transmission obtained is higher, if rationally adding the quantity of corresponding micro-ring resonator, transmission capacity
It will be further increased, this will be provided conveniently for optical interconnection system upgrading in the future and dilatation, greatly show that the present invention is carried
For the superiority of technology.
Described above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (2)
1. wavelength and polarization mixing multiplexing demultiplexing device on a kind of silicon chip, including substrate, it is characterised in that：On institute's substrate
Provided with multiple input waveguides, multiple output waveguides, bus waveguide, multiple slot type micro-loops and multiple hybrid plasma micro-loops；
Input signal is multiplexed to bus by input, each input waveguide by a slot type micro-loop or hybrid plasma micro-loop respectively
Waveguide carries out hybrid multiplex transmission；The signal transmitted in output end, bus waveguide after hybrid multiplex is micro- through a slot type respectively
Ring or hybrid plasma micro-loop are demultiplexed to each output waveguide；Input is identical with the quantity of the slot type micro-loop of output end,
Input is identical with the quantity of the hybrid plasma micro-loop of output end；Described slot type micro-loop includes two nanometers closely leaned on
Ring；Described hybrid plasma micro-loop includes dielectric ring, low-refraction ring type filling and metal cover ring from bottom to top；It is described
Spacing in slot type micro-loop between two nano-rings is 80nm~120nm；Dielectric ring in the hybrid plasma micro-loop is
Made of silicon materials, the thickness of dielectric ring is 220nm；Low-refraction ring type filling is made of silica or silicon nitride material,
The thickness of low-refraction ring type filling is 20nm~50nm；Metal cover ring is metal cover ring made of silver, aluminium or copper product
Thickness be 100nm~200nm；The outer radius of the slot type micro-loop is 3.0 μm~3.5 μm, outside hybrid plasma micro-loop
Radius is 2.0 μm~2.3 μm.
2. wavelength and polarization mixing multiplexing demultiplexing device on silicon chip according to claim 1, it is characterised in that：It is described
Bus waveguide is single bus waveguide.
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| CN103941345A (en) * | 2014-05-06 | 2014-07-23 | 苏州大学 | Two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter |
| CN104297854A (en) * | 2014-11-05 | 2015-01-21 | 武汉邮电科学研究院 | Silicon-based multi-wavelength light source and implementation method thereof |
| CN104459879A (en) * | 2014-12-23 | 2015-03-25 | 东南大学 | Silicon-based microring polarization demultiplexer |
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| CN103941345A (en) * | 2014-05-06 | 2014-07-23 | 苏州大学 | Two-dimensional stratified material based SOI (Semicon-on-insulator) base micro loop filter |
| CN104297854A (en) * | 2014-11-05 | 2015-01-21 | 武汉邮电科学研究院 | Silicon-based multi-wavelength light source and implementation method thereof |
| CN104459879A (en) * | 2014-12-23 | 2015-03-25 | 东南大学 | Silicon-based microring polarization demultiplexer |
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