CN104111494A - Silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method - Google Patents
Silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method Download PDFInfo
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Abstract
The invention provides a silicon nitride waveguide and microannulus-based mode-wavelength multiplexer manufacturing method. The method comprises steps: step 1, a lower-limit silicon dioxide layer and a silicon nitride material mode-wavelength multiplexing integrated device layer are sequentially grown on a substrate; step 2, an etching method is adopted to etch the silicon nitride material mode-wavelength multiplexing integrated device layer into a plurality of strip-shaped waveguide structures and a plurality of microannulus resonant cavity structures, and the etching depth reach the surface of the lower-limit silicon dioxide layer; step 3, an upper-limit silicon dioxide layer and a metal heating adjusting layer are sequentially grown on the lower-limit silicon dioxide layer with the plurality of strip-shaped waveguide structures and the plurality of microannulus resonant cavity structures formed in an etching mode; and step 4, an etching method is adopted to etch the metal heating adjusting layer to a plurality of microannulus structures, and manufacturing is completed. According to the method of the invention, coupling is selected through a mode under the wave vector matching condition and characteristics are selected through wavelength of the microannulus, and the on-chip mode-wavelength multiplexing demultiplexing function is realized.
Description
Technical field
Patent of the present invention relates to light interconnection, silicon based photon is learned and photonic semiconductor integration field, relate in particular to a kind of preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring, more specifically the present invention utilizes the efficiency light coupling conversion of silicon nitride waveguides direct-coupling device and the wavelength selection function of micro-ring resonant cavity to realize multiplexing and demultiplexing filter function on sheet.
Background technology
Modern times, the challenge of chip performance was transferred to data transmission from computing function along with microelectronic component integrated level improves constantly.By 2022, the message transmission rate of each core on-chip interconnect of system architecture of future generation was estimated to reach 780Tb/s, and the capacity that electrical interconnection on conventional one single chip can be provided by chip area power consumption limitations is about 100Tb/s.Light interconnection technique is one and is used for replacing copper conductor, the feasible program of communicating by letter with large data capacity as low energy consumption in chip.Light interconnection is except message transmission rate is higher than electrical interconnection, utilize optical waveguide to replace transfer wire can also avoid the electromagnetic interference (EMI) of electrical interconnection and signal delay and the heating that resistance-capacitance (RC) effect is brought, and can utilize wavelength multiplexing (Wavelength-Division Multiplexing, WDM) technology to meet the requirement that interconnect bandwidth further increases in the future.
In order to meet Peta level (10 on following chip
15) data transmission capacity, need on one single chip, hold optical data transmission channel up to ten thousand, yet framework waveguide up to ten thousand is a very large challenge on chip.Utilizing dense wave division multipurpose (DWDM) technology is a kind of feasible way, can greatly reduce waveguide number required on chip.Because light source is one of main source of energy consumption in optical interconnection system on sheet, need finding method to increase the data channel that each light source can provide, with limited number of light sources, realize the high data transmission density bit of He Di unit data energy consumption simultaneously.In recent years, mode multiplexing based on multimode optical fiber (Mode-Devision Multiplexing, MDM) technology is widely studied, mode multiplexing technological expansion is interconnected to silicon chip glazing, can be by multiple signals transmission in the different silicon waveguide mode of identical wavelength, thereby the signalling channel that can expand at double single wavelength in waveguide reduces unit data energy consumption simultaneously, to meet the requirement of following light interconnection low energy consumption mass data transfers.
Summary of the invention
The object of the invention is to, a kind of preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring is provided, it is to change and the integrated demand of Heterolamellar photovoltaic for number of channel increase, operation wavelength in following optical interconnection system, the present invention is coupled by the model selection under wave vector matching condition, with the wavelength selectivity of micro-ring, realize pattern-wavelength multiplexing demultiplexing function on sheet.
For achieving the above object, the invention provides a kind of preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring, comprising:
Step 1: limit silicon dioxide layer and silicon nitride material pattern-wavelength multiplexing integrated device layer under growth successively on substrate;
Step 2: adopt the method for etching, silicon nitride material pattern-wavelength multiplexing integrated device layer is etched into a plurality of slab waveguide structures and a plurality of micro-ring resonant cavity configuration, etching depth arrives the surface of lower restriction silicon dioxide layer;
Step 3: be formed with in etching on the lower restriction silicon dioxide layer of a plurality of slab waveguide structures and a plurality of micro-ring resonant cavity configurations and limit silicon dioxide layer and METAL HEATING PROCESS regulating course in growth successively;
Step 4: adopt the method for etching, METAL HEATING PROCESS regulating course etching is formed to a plurality of micro-ring structures, complete preparation.
Advantage of the present invention and beneficial effect:
1, the invention belongs to silicon photonic integrated device on sheet, binding pattern is multiplexing has improved the channel number in waveguide greatly with wavelength multiplexing.
2, the present invention utilizes silicon nitride as device layer, and its low-loss operation wavelength can, from visible ray near infrared, can meet the demand to work optical wavelength in following optical interconnection system.
3, the present invention utilizes silicon nitride as the device layer of deposition, is suitable for multilayer integrated silicon photonic device system and other electronics or photonic device three-dimensional integrated.
4, the present invention utilizes direct-coupling device as the multiplexing part of integrated device, and direct-coupling utensil has advantage simple in structure, and the insensitive feature of its wavelength has increased process allowance and reduced the long energy consumption of hot harmonic.
5, the present invention can utilize micro-ring resonant cavity as the demultiplexing part of integrated device, utilize its wavelength select the feature implementation pattern downloaded multiplexing-the integrating filtering function of wavelength multiplexing.
Accompanying drawing explanation
For object of the present invention and structure and the effect that can reach are better described, below in conjunction with embodiment and accompanying drawing, the present invention mainly be take to pattern count and number of wavelengths and be 22 * 2 mode of operations and be described further as pattern-wavelength multiplexing device of transverse electric mode operation wavelength at 1550nm, wherein:
Fig. 1 is preparation flow figure of the present invention;
Fig. 2 is the cross sectional representation of silicon nitride waveguides of the present invention and micro-ring;
Fig. 3 is the structural representation of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring structure;
Fig. 4 be in the silicon nitride waveguides of wavelength 1550 nanometers thickness 440 nanometers not the mode refractive index of same order transverse electric mode formula with the variation of width.
Fig. 5 is the field pattern of basic mode in the silicon nitride waveguides of width 1 micron thickness 440 nanometers.
Fig. 6 is that the coupling coefficient of basic mode and First-Order Mode in 1 micron of single mode waveguide of coupling gap 500 nano-width and 2.25 microns of bus multimode waveguides of width is with the variation of coupling length.
Fig. 7 be in 1 micron of single mode waveguides of direct-coupling device width of 120 microns of coupling lengths and 2.25 microns of bus multimode waveguides of width basic mode and First-Order Mode and with the variation with coupling gap of the coupling coefficient of 1 micron of bus waveguide basic mode of width.
Fig. 8 be in 1 micron of single mode waveguide of 40 microns of width of coupling length and 2.25 microns of bus multimode waveguides of width basic mode and First-Order Mode and with the variation with coupling gap of the coupling coefficient of 1 micron of bus waveguide basic mode of width.
Embodiment
Refer to shown in Fig. 1-Fig. 3, the invention provides a kind of preparation method of the pattern wavelength multiplexing device based on silicon nitride waveguides and micro-ring, comprising:
Step 1: limit silicon dioxide layer 20 and silicon nitride material pattern-wavelength multiplexing integrated device layer 30 under growth successively on a substrate 10; The material of this substrate 10 is monocrystalline, polycrystalline or amorphous silicon wafer, or the silicon wafer of electronics or photonic device; The thickness of this lower restriction silicon dioxide layer 20 meets the leakage losses that light is transferred to substrate 10 and is less than 1dB/cm, and this leakage losses can meet the requirement of integrated low energy consumption on sheet; The thickness of this silicon nitride material pattern-wavelength multiplexing integrated device layer 30 is that transverse electric mode or transverse magnetic wave are determined according to mode of operation, and keeps effective restriction of vertical direction single mode and light field simultaneously.
Step 2: adopt the method for etching, silicon nitride material pattern-wavelength multiplexing integrated device layer 30 etching are formed to a plurality of slab waveguide structures 301 and a plurality of micro-ring resonant cavity configuration 302, etching depth arrives the surface of lower restriction silicon dioxide layer 20; A plurality of slab waveguide structures 301 in this silicon nitride material mode multiplexing-wavelength multiplexing integrated device layer 30, comprise a bus waveguide 3011, a plurality of single mode input waveguide 3012 and a plurality of single-mode output waveguide 3013; This bus waveguide 3011 is connected by the tapered waveguide of different in width; The waveguide number of the plurality of single mode input waveguide 3012 equals multiplex system channel number, the input signal of same pattern different wave length utilizes the waveguide of Y type to close ripple, utilize the direct-coupling device of wave vector coupling to realize the coupling of AD HOC in single mode input waveguide and bus waveguide, its stiffness of coupling is controlled by gap and coupling length; The plurality of micro-ring resonant cavity configuration 302, resonator cavity number equals multiplex system channel number, micro-ring is single transverse mode racetrack resonator cavity of same size or many transverse modes racetrack resonator cavity of different size, the stiffness of coupling that a plurality of micro-ring resonant cavity configurations 302 and a plurality of output waveguide 3013 and bus waveguide are 3011 is controlled by wave vector coupling, coupling gap and length, is wider than the requirement of data transmission on 40GHz sheet to meet band; The number of waveguides of the plurality of single-mode output waveguide 3013 equals multiplex system channel number, by the coupling implementation pattern with a plurality of micro-ring resonant cavity configurations 302 and wavelength selectivity, downloads filtering.
Step 3: be formed with in etching on the lower restriction silicon dioxide layer 20 of a plurality of slab waveguide structures 301 and a plurality of micro-ring resonant cavity configurations 302 and limit silicon dioxide layer 40 and METAL HEATING PROCESS regulating course 50 in growth successively; On this, the thickness of restriction silicon dioxide layer 40 meets mode field and is distributed in upper bound Orly tail and is less than 1% of maximum value, to reduce metal, absorbs the impact on light field transmission; The thickness of this METAL HEATING PROCESS layer 50 considers according to the thermal resistance of the resistivity of metal and device, guarantees that the temperature regulating range of device is greater than 100 degree.
Step 4: adopt the method for etching, METAL HEATING PROCESS regulating course 50 etchings are formed to a plurality of micro-ring structures 501; The plurality of micro-ring structure 501 is positioned at the top of a plurality of micro-ring resonant cavity configurations 302, measure-alike, completes preparation.
For making ultimate principle of the present invention, technical scheme and advantage clearer, below in conjunction with pattern count and number of wavelengths, being 22 * 2 mode of operations is that transverse electric mode operation wavelength is at the specific embodiment of mode multiplexing-wavelength multiplexing device of 1550nm, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 3 is the structural representation that pattern count and number of wavelengths are 2 * 2 patterns-wavelength multiplexing device of 2.All input and output waveguides and micro-ring are single mode waveguide and only consider fundamental transverse mode, and bus waveguide changes multimode waveguide into by the gradual width waveguide single mode waveguide of taper.Wherein input waveguide 1 and 3 wavelength are λ
1, input waveguide 2 and 4 wavelength are λ
2input waveguide 1 and 2 light are coupled to the basic mode of bus waveguide by direct-coupling device, and the light of input waveguide 3 and 4 is coupled to the First-Order Mode of wide multi-mode bus waveguide by direct-coupling device, bus waveguide width design makes wherein basic mode wave vector coupling in First-Order Mode and input single mode waveguide, i.e. four waveguide inputs couple light to two patterns of bus waveguide and two wavelength totally 4 channels.Micro-ring resonant wavelength in downloading end output waveguide 1 and 3 couplings is λ
1, the resonance wavelength of output waveguide 2 and the micro-ring of 4 coupling is λ
2, the First-Order Mode coupling of waveguide 3 and the micro-rings of 4 coupling and wide multi-mode bus waveguide, bus waveguide width design is basic mode wave vector coupling in First-Order Mode and micro-ring wherein, and the basic mode of waveguide 1 and the 2 micro-rings of coupling and single mode bus waveguide is coupled.Whole system has realized input waveguide 1,2, within 3,4 minutes, is clipped to the signal transmission of corresponding output waveguide 1,2,3,4, and pattern count and number of wavelengths are 2 pattern and wavelength multiplexing demultiplexing function.
Fig. 4 be in the silicon nitride waveguides of wavelength 1550 nanometers thickness 440 nanometers not the mode refractive index of same order transverse electric mode formula with the variation of width.Wherein dotted line represents 1 micron of mode refractive index corresponding to basic mode of width, the mode refractive index of First-Order Mode in 2.25 microns of multimode waveguide width that in 1 micron of single mode waveguide width, basic mode is corresponding, realizing coupling wave vector coupling increases the required multimode waveguide width of effective coupling length.
Fig. 5 is the field pattern of basic mode in the silicon nitride waveguides of width 1 micron thickness 440 nanometers, 1.2 microns of lower limit layer thickness, 1.6 microns of upper limiting layer thickness, in corresponding waveguide along to 1.16 microns of upper limiting layer surface distances.The about 0.8dB/cm of loss that the leakage of this pattern causes, is 0.005 in the hangover field distribution of upper surface and the ratio of the high field distribution of waveguide core, and this limiting layer thickness can meet the demand of practical devices.
Fig. 6 is coupling gap 500 nanometers, in 1 micron of single mode waveguide of width in basic mode and 2.25 microns of bus multimode waveguides of width the coupling coefficient of basic mode and First-Order Mode with the variation of coupling length.In 2.25 microns of wide bus waveguides, have a plurality of patterns, basic mode wave vector coupling in First-Order Mode and 1 micron of single mode waveguide wherein, can realize energy and be greater than 99% and be coupled to bus waveguide during 125 microns of coupling lengths.But in wide waveguide, basic mode also can be coupled with single mode waveguide basic mode, causes and crosstalks, and is about 20 microns its oscillation period, for micro-ring resonant cavity, need to design coupling length and crosstalk to reduce, therefore can design low crosstalk couplings length is 40 microns.
Fig. 7 is in the direct-coupling device of 120 microns of coupling lengths, basic mode in 1 micron of single mode waveguide of width, with basic mode and First-Order Mode in 2.25 microns of bus multimode waveguides of width, and with 1 micron of bus waveguide of width in the coupling coefficient of basic mode with the variation of coupling gap.According to front figure, direct-coupling device length is chosen as to 120 microns, for First-Order Mode in 2.25 microns of bus waveguides of width, realize ceiling capacity and change corresponding coupling gap near 0.55 micron, for basic mode ceiling capacity in 1 micron of bus waveguide of width, change corresponding coupling gap at 0.5 micron, 90% Conversion of Energy is approximately 50nm to the tolerance of coupling gap.With the <-30dB when coupling gap is 0.5 micron that crosstalks that in 2.25 microns of bus waveguides, basic mode coupling causes.
Fig. 8 is in the direct-coupling device of 40 microns of coupling lengths, in 1 micron of single mode waveguide of width in basic mode and 2.25 microns of bus multimode waveguides of width basic mode and First-Order Mode and with the variation with coupling gap of the coupling coefficient of 1 micron of bus waveguide basic mode of width.This Design of length is to go to the coupling length of the micro-ring of type and waveguide, according to front figure, be chosen as low 40 microns of crosstalking a little, for the coupling coefficient when 0.55 micron of the coupling gap of First-Order Mode in 2.25 microns of bus waveguides of width, being about 0.52, is to be about 0.48 at coupling gap at 0.5 micron for basic mode in 1 micron of bus waveguide of width.Dotted line represents that coupling coefficient is 0.5, its coupling Q value 4000 when micro-ring radius is 30 microns, and corresponding bandwidth 50GHz, considers that coupling gap error 50nm Time Bandwidth is greater than 40GHz.With the <-25dB when coupling gap is 0.5 micron that crosstalks that in 2.25 microns of bus waveguides, basic mode coupling causes.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a preparation method for the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring, comprising:
Step 1: limit silicon dioxide layer and silicon nitride material pattern-wavelength multiplexing integrated device layer under growth successively on substrate;
Step 2: adopt the method for etching, silicon nitride material pattern-wavelength multiplexing integrated device layer is etched into a plurality of slab waveguide structures and a plurality of micro-ring resonant cavity configuration, etching depth arrives the surface of lower restriction silicon dioxide layer;
Step 3: be formed with in etching on the lower restriction silicon dioxide layer of a plurality of slab waveguide structures and a plurality of micro-ring resonant cavity configurations and limit silicon dioxide layer and METAL HEATING PROCESS regulating course in growth successively;
Step 4: adopt the method for etching, METAL HEATING PROCESS regulating course etching is formed to a plurality of micro-ring structures, complete preparation.
2. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 1, wherein the material of substrate is monocrystalline, polycrystalline or amorphous silicon wafer, or the silicon wafer of electronics or photonic device.
3. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 1, the thickness of its lower limit silicon dioxide layer processed meets the leakage losses that light is transferred to substrate and is less than 1dB/cm.
4. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 1, wherein a plurality of slab waveguide structures in silicon nitride material mode multiplexing-wavelength multiplexing integrated device layer, comprise a bus waveguide, a plurality of single mode input waveguide and a plurality of single-mode output waveguide.
5. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 4, wherein bus waveguide is connected by the tapered waveguide of different in width.
6. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 4, wherein the waveguide number of a plurality of single mode input waveguides equals multiplex system channel number, the input signal of same pattern different wave length utilizes the waveguide of Y type to close ripple, utilize the direct-coupling device of wave vector coupling to realize the coupling of AD HOC in single mode input waveguide and bus waveguide, its stiffness of coupling is controlled by gap and coupling length.
7. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 4, a plurality of micro-ring resonant cavity configurations wherein, resonator cavity number equals multiplex system channel number, micro-ring is single transverse mode racetrack resonator cavity of same size or many transverse modes racetrack resonator cavity of different size, stiffness of coupling between a plurality of micro-ring resonant cavity configurations and a plurality of output waveguide and a bus waveguide is controlled by wave vector coupling, coupling gap and length, is wider than the requirement of data transmission on 40GHz sheet to meet band.
8. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 4, wherein the number of waveguides of a plurality of single-mode output waveguides equals multiplex system channel number, by the coupling implementation pattern with a plurality of micro-ring resonant cavity configurations and wavelength selectivity, downloads filtering.
9. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 1, wherein the thickness of upper restriction silicon dioxide layer meets mode field and is distributed in upper bound Orly tail and is less than 1% of maximum value.
10. the preparation method of the pattern-wavelength multiplexing device based on silicon nitride waveguides and micro-ring according to claim 1, wherein a plurality of micro-ring structures are positioned at the top of a plurality of micro-ring resonant cavity configurations, measure-alike.
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| CN106842634A (en) * | 2016-12-14 | 2017-06-13 | 上海理工大学 | Automatically controlled tunable optic filter and preparation method based on three-dimensional micro-ring resonant cavity |
| CN110261958A (en) * | 2019-06-17 | 2019-09-20 | 上海理工大学 | The unrelated silicon nitride micro-loop filtering chip of environment temperature based on vertical slits structure |
| CN110648974A (en) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | Photonic device and method of forming a photonic device |
| CN111371500A (en) * | 2020-03-12 | 2020-07-03 | 西北工业大学 | PDM-MZM-based high-linearity radio-over-optical link device and method |
| CN113612539A (en) * | 2021-08-27 | 2021-11-05 | 中国地质大学（武汉） | Silicon optical transmitter chip structure integrating multiplexing and modulating functions |
| CN113820902A (en) * | 2021-09-09 | 2021-12-21 | 深圳大学 | On-chip light source modulation system |
| CN114609729A (en) * | 2022-03-11 | 2022-06-10 | 中国科学院西安光学精密机械研究所 | Temperature control adjusting system and debugging method of micro-ring modulator wavelength division multiplexing optical transmitter |
| CN115498505A (en) * | 2022-11-14 | 2022-12-20 | 苏州熹联光芯微电子科技有限公司 | Wavelength-adjustable laser and laser external cavity |
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| CN106842634A (en) * | 2016-12-14 | 2017-06-13 | 上海理工大学 | Automatically controlled tunable optic filter and preparation method based on three-dimensional micro-ring resonant cavity |
| CN106842634B (en) * | 2016-12-14 | 2019-06-28 | 上海理工大学 | Automatically controlled tunable optic filter and preparation method based on three-dimensional micro-ring resonant cavity |
| US11156772B2 (en) | 2018-06-27 | 2021-10-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photonic semiconductor device and method |
| CN110648974A (en) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | Photonic device and method of forming a photonic device |
| CN110648974B (en) * | 2018-06-27 | 2021-04-27 | 台湾积体电路制造股份有限公司 | Photonic device and method of forming a photonic device |
| CN110261958A (en) * | 2019-06-17 | 2019-09-20 | 上海理工大学 | The unrelated silicon nitride micro-loop filtering chip of environment temperature based on vertical slits structure |
| CN111371500A (en) * | 2020-03-12 | 2020-07-03 | 西北工业大学 | PDM-MZM-based high-linearity radio-over-optical link device and method |
| CN113612539A (en) * | 2021-08-27 | 2021-11-05 | 中国地质大学（武汉） | Silicon optical transmitter chip structure integrating multiplexing and modulating functions |
| CN113820902A (en) * | 2021-09-09 | 2021-12-21 | 深圳大学 | On-chip light source modulation system |
| CN113820902B (en) * | 2021-09-09 | 2024-04-05 | 深圳大学 | On-chip light source modulation system |
| CN114609729A (en) * | 2022-03-11 | 2022-06-10 | 中国科学院西安光学精密机械研究所 | Temperature control adjusting system and debugging method of micro-ring modulator wavelength division multiplexing optical transmitter |
| CN115498505A (en) * | 2022-11-14 | 2022-12-20 | 苏州熹联光芯微电子科技有限公司 | Wavelength-adjustable laser and laser external cavity |
| CN115498505B (en) * | 2022-11-14 | 2023-08-22 | 苏州熹联光芯微电子科技有限公司 | Wavelength-adjustable laser and laser external cavity |
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Application publication date: 20141022 |