CN103576238B - A kind of mode multiplexing/demodulation multiplexer of the N based on asymmetrical Y bifurcation structure - Google Patents
A kind of mode multiplexing/demodulation multiplexer of the N based on asymmetrical Y bifurcation structure Download PDFInfo
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Abstract
The invention discloses a kind of N based on asymmetrical Y bifurcation structure mode multiplexing/demodulation multiplexer, formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide is equal with the width of trunk waveguide, the angle of wide branch-waveguide and thin branch-waveguide intersection is less than 1 degree, the adjacent trunk waveguide of two-stage asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of asymmetrical Y bifurcated, the width of the trunk waveguide of adjacent two-stage asymmetrical Y bifurcated is not identical, advantage realizes multiple data channel transmission, and have the features such as large bandwidth, low-loss and low crosstalk.
Description
Technical field
The present invention relates to a kind of multiplexing demultiplexing device, especially relate to a kind of N based on asymmetrical Y bifurcation structure mode multiplexing/demodulation multiplexer.
Background technology
Along with the quick growth of Internet data traffic, optical link capacity is badly in need of amplification.The mode of current expansion optical link capacity comprises space division multiplexing technology, wavelength-division multiplex technique, polarization multiplexing and mode multiplexing technology.Wherein, in mode multiplexing technology each optical mode can be used as one independently channel carry out data transmission, possess the advantage of sweetly disposition eigenmodes, become the important solution route of the message capacity improving single link in light network at present.
As the Primary Component of mode multiplexing transmission system, mode multiplexing/demodulation multiplexer causes increasing concern in recent years.The structure that traditional mode multiplexing/demodulation multiplexer adopts mainly contains Y bifurcated shunt, multi-mode interference coupler, the asymmetric directional coupler of cascade and cascade multimode grating auxiliary coupler.Traditional mode multiplexing demultiplexing device based on Y bifurcated shunt and multi-mode interference coupler only can realize two data transmission channels, limited to the amplification of optical link capacity.Can realize multiple (two and two or more) data channel transmission based on the traditional mode multiplexing demultiplexing device of the asymmetric directional coupler of cascade and the traditional mode multiplexing demultiplexing device of cascade multimode grating auxiliary coupler, be current existing mode multiplexing/demodulation multiplexer.But, traditional mode multiplexing demultiplexing device based on the asymmetric directional coupler of cascade needs the coupling length of the accurately asymmetric directional coupler of control and intensity could realize multiple data channel transmission, traditional mode multiplexing demultiplexing device based on cascade multimode grating auxiliary coupler is limited to the bandwidth of grating auxiliary coupler self, although can realize multiple data channel transmission, the amplification of optical link capacity is limited.Therefore, although increase to optical link capacity by multiple data channel transmission based on the traditional mode multiplexing demultiplexing device of the asymmetric directional coupler of cascade and the traditional mode multiplexing demultiplexing device of cascade multimode grating auxiliary coupler, but be all limited to self device performance to the amplification of optical link capacity, the amplification of optical link capacity is more limited.
In optical fiber transmission technique, asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, and wherein the width of wide branch-waveguide is greater than the width of thin branch-waveguide, and both have different effective refractive indexs.Current asymmetrical Y bifurcated has been utilized and has been designed to the function elements such as wavelength multiplexer, polarization splitter and pattern sorter.When utilizing asymmetrical Y bifurcated to realize the pattern sorter of two patterns, when the basic mode in the thin branch-waveguide of asymmetrical Y bifurcated is transferred through bifurcated, the single order pattern in the trunk waveguide of asymmetrical Y bifurcated can be encouraged.Therefore, utilize asymmetrical Y bifurcated to realize basic mode in thin branch-waveguide and excite the higher order mode in trunk waveguide, asymmetrical Y bifurcated is applied in mode multiplexing/demodulation multiplexer and realizes multiple data channel transmission there is realistic meaning.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of N based on asymmetrical Y bifurcation structure mode multiplexing/demodulation multiplexer, and this N mode multiplexing/demodulation multiplexer can realize multiple data channel transmission, and has the features such as large bandwidth, low-loss and low crosstalk.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide is equal with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the wide branch-waveguide of trunk waveguide and kth+1 grade of asymmetrical Y bifurcated of kth level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the wide branch-waveguide of kth+1 grade of asymmetrical Y bifurcated is greater than the width of the trunk waveguide of kth level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
A kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise waveguide body and substrate respectively, described waveguide body comprises sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
A kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide is equal with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of kth level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of kth level asymmetrical Y bifurcated, the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the wide branch-waveguide of N-1 level asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
A kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise waveguide body and substrate respectively, described waveguide body comprises sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
Compared with prior art, the advantage of N pattern multiplexer of the present invention is the cascade of N-1 asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, in N pattern multiplexer, the width of the wide branch-waveguide of kth+1 grade of asymmetrical Y bifurcated is greater than the width of the trunk waveguide of kth level asymmetrical Y bifurcated, the wide branch-waveguide of trunk waveguide and kth+1 grade of asymmetrical Y bifurcated of kth level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line, ensure that the width of the wide branch-waveguide of each asymmetrical Y bifurcated supports multimode transmissions thus, the multimode transmissions that the width of the wide branch-waveguide of n-th grade of asymmetrical Y bifurcated is supported comprises the n-th rank pattern and the (n+1)th rank pattern, the effective index of fundamental mode of the thin branch-waveguide support of every grade of asymmetrical Y bifurcated is between the effective refractive index and the effective refractive index of the (n+1)th rank pattern of the n-th rank pattern, n=1, 2, N-1.Thus when the basic mode of the thin branch-waveguide of asymmetrical Y bifurcated is transferred through its bifurcated, according to pattern effective refractive index matching principle, the trunk waveguide higher order mode of asymmetrical Y bifurcated can be evoked, angle between the wide branch-waveguide of asymmetrical Y bifurcated and thin branch-waveguide is less than the thermal insulation transmission of 1 degree of Assured Mode, obtain the N pattern multiplexer of large bandwidth, low-loss and low crosstalk thus, realize multiple data channel transmission, expand optical link message capacity.
Compared with prior art, the advantage of N pattern demultiplexer of the present invention is the cascade of N-1 asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, in N pattern demultiplexer, the width of the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of kth level asymmetrical Y bifurcated, the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of kth level asymmetrical Y bifurcated, ensure that the width of the wide branch-waveguide of each asymmetrical Y bifurcated supports multimode transmissions thus, the multimode transmissions that the width of the wide branch-waveguide of n-th grade of asymmetrical Y bifurcated is supported comprises the n-th rank pattern and the (n+1)th rank pattern, the effective index of fundamental mode of the thin branch-waveguide support of every grade of asymmetrical Y bifurcated is between the effective refractive index and the effective refractive index of the (n+1)th rank pattern of the n-th rank pattern, n=1, 2, N-1.Thus when the higher order mode of the trunk waveguide of asymmetrical Y bifurcated is transferred through its bifurcated, according to pattern effective refractive index matching principle, the basic mode of the thin branch-waveguide of asymmetrical Y bifurcated can be developed into, the residue low step mode of the trunk waveguide of asymmetrical Y bifurcated will continue onwards transmission, angle between the wide branch-waveguide of asymmetrical Y bifurcated and thin branch-waveguide is less than the thermal insulation transmission of 1 degree of Assured Mode, obtain the N pattern demultiplexer of large bandwidth, low-loss and low crosstalk thus, realize multiple data channel transmission, expand optical link message capacity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the N pattern multiplexer based on asymmetrical Y bifurcation structure of the present invention;
Fig. 2 is the structural representation of the N pattern demultiplexer based on asymmetrical Y bifurcation structure of the present invention;
Fig. 3 is the structural representation of the structural representation of the asymmetrical Y bifurcated of N pattern multiplexer the 1st grade or the asymmetrical Y bifurcated of N pattern demultiplexer 3rd level;
Fig. 4 is the structural representation of the structural representation of the asymmetrical Y bifurcated of N pattern multiplexer the 1st grade and the 2nd grade or the asymmetrical Y bifurcated of N pattern demultiplexer the 2nd grade and 3rd level;
Fig. 5 is the structural representation of asymmetrical Y bifurcated of N pattern multiplexer or N pattern demultiplexer the 1st grade, the 2nd grade and 3rd level;
Fig. 6 be the trunk waveguide of asymmetrical Y bifurcated, wide branch-waveguide or thin branch-waveguide along A-A ˊ to cut-open view;
Fig. 7 is the structural representation of pattern multiplexer cascade mode demodulation multiplexer.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
The invention discloses a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide is equal with the width of trunk waveguide, angle between wide branch-waveguide and thin branch-waveguide is less than 1 degree, the wide branch-waveguide of trunk waveguide and kth+1 grade of asymmetrical Y bifurcated of kth level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the wide branch-waveguide of kth+1 grade of asymmetrical Y bifurcated is greater than the width of the trunk waveguide of kth level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
Embodiment: as shown in Figure 1, a kind of 4 pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of 3 asymmetrical Y bifurcateds, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide is equal with the width of trunk waveguide, angle α between the wide branch-waveguide of every grade of asymmetrical Y bifurcated and thin branch-waveguide is 0.8 degree, the port of the wide branch-waveguide of the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure 1, 1st grade of asymmetrical Y bifurcated is by trunk waveguide 4, wide branch-waveguide 2 and thin branch-waveguide 3 form, 2nd grade of asymmetrical Y bifurcated is by trunk waveguide 8, wide branch-waveguide 6 and thin branch-waveguide 7 form, 3rd level asymmetrical Y bifurcated is by trunk waveguide 11, wide branch-waveguide 9 and thin branch-waveguide 10 form, the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5 with the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated, the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5 with the wide branch-waveguide 9 of 3rd level asymmetrical Y bifurcated.As shown in Fig. 3 ~ Fig. 5, the width W of the thin branch-waveguide of every grade of asymmetrical Y bifurcated
0be 5 microns, the width W of the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated
1be 13 microns, the width of the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated is W
1-W
0=8 microns, the width W of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated
2be 22 microns, the width of the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated is W
2-W
0=17 microns, the width W of the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated
3be 30 microns, the width of the wide branch-waveguide 9 of 3rd level asymmetrical Y bifurcated is W
3-W
0=25 microns, the length L of the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated
0, the 2nd grade of asymmetrical Y bifurcated the length L of wide branch-waveguide 6
1with the length L of the wide branch-waveguide 9 of 3rd level asymmetrical Y bifurcated
2be 5000 microns.As shown in Figure 6, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide are SiO
2channel waveguide, comprise waveguide body and substrate 14 respectively, the covering 12 that waveguide body comprises sandwich layer 13 and is coated on outside sandwich layer 13, substrate 14 is fixed on the bottom of covering 12, and the material of sandwich layer 13 is doping silicon dioxide, and the material of covering 12 is pure silicon dioxide, the material of substrate 14 is silicon, the refractive index of covering 12 is 1.45, and sandwich layer 13 is 0.01 with the refringence of covering 12, and the refractive index of substrate 14 is 3.45.
The present embodiment based in 4 pattern multiplexer of asymmetrical Y bifurcation structure, the mould spot transformational structure 1 that the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is arranged is as the input end of pattern multiplexer, and the port of the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated is as the output terminal of pattern multiplexer.
The invention also discloses a kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide is equal with the width of trunk waveguide, angle between wide branch-waveguide and thin branch-waveguide is less than 1 degree, the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of kth level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of kth level asymmetrical Y bifurcated, the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
Embodiment: as shown in Figure 2, a kind of 4 pattern demultiplexer based on asymmetrical Y bifurcation structure, a kind of 4 pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of 3 asymmetrical Y bifurcateds, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide is equal with the width of trunk waveguide, angle α between the wide branch-waveguide of every grade of asymmetrical Y bifurcated and thin branch-waveguide is 0.8 degree, the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and and the port of wide branch-waveguide of 3rd level asymmetrical Y bifurcated be provided with mould spot transformational structure 1, 3rd level asymmetrical Y bifurcated is by trunk waveguide 4, wide branch-waveguide 2 and thin branch-waveguide 3 form, 2nd grade of asymmetrical Y bifurcated is by trunk waveguide 8, wide branch-waveguide 6 and thin branch-waveguide 7 form, 1st grade of asymmetrical Y bifurcated is by trunk waveguide 11, wide branch-waveguide 9 and thin branch-waveguide 10 form, the trunk waveguide 4 of 3rd level asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5 with the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated, the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5 with the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated.As shown in Fig. 3 ~ Fig. 5, the width W of the thin branch-waveguide of every grade of asymmetrical Y bifurcated
0be 5 microns, the width W of the trunk waveguide 4 of 3rd level asymmetrical Y bifurcated
1be 13 microns, the width of the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated is W
1-W
0=8 microns, the width W of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated
2be 22 microns, the width of the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated is W
2-W
0=17 microns, the width W of the trunk waveguide 11 of the 1st grade of asymmetrical Y bifurcated
3be 30 microns, the width of the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated is W
3-W
0=25 microns, the length L of the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated
0, the 2nd grade of asymmetrical Y bifurcated the length L of wide branch-waveguide 6
1with the length L of the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated
2be 5000 microns.As shown in Figure 6, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide are SiO
2channel waveguide, comprise waveguide body and substrate 14 respectively, the covering 12 that waveguide body comprises sandwich layer 13 and is coated on outside sandwich layer 13, substrate 14 is fixed on the bottom of covering 12, and the material of sandwich layer 13 is doping silicon dioxide, and the material of covering 12 is pure silicon dioxide, the material of substrate 14 is silicon, the refractive index of covering 12 is 1.45, and sandwich layer 13 is 0.01 with the refringence of covering 12, and the refractive index of substrate 14 is 3.45.
The present embodiment based in 4 pattern demultiplexer of asymmetrical Y bifurcation structure, the mould spot transformational structure 1 that the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is arranged is as the output terminal of pattern multiplexer, and the port of the trunk waveguide 11 of the 1st grade of asymmetrical Y bifurcated is as the input end of pattern multiplexer.
As shown in Figure 7, the output terminal of 4 pattern multiplexer based on asymmetrical Y bifurcation structure of above-described embodiment is docked with the input end of 4 pattern demultiplexer based on asymmetrical Y bifurcated, obtains a kind of mode multiplexing transmission system.The principle of work of this mode multiplexing transmission system is: after basic mode inputs from the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, exported by the output terminal corresponding from pattern demultiplexer, omnidistance maintenance single mode transport; When basic mode inputs from the thin branch-waveguide 3 of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, First-Order Mode in the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated will have been encouraged, this pattern onwards transmission, after the bifurcated of 3rd level asymmetrical Y bifurcated corresponding to pattern demultiplexer, First-Order Mode will develop into basic mode, and export from the output terminal that pattern demultiplexer is corresponding; When basic mode inputs from the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern multiplexer, second order mode in the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated will have been encouraged, this pattern onwards transmission, until after meeting the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern demultiplexer, second order mode will develop into basic mode, and export from the output terminal that pattern demultiplexer is corresponding; When basic mode inputs from the thin branch-waveguide 10 of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, three rank moulds in the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated will have been encouraged, this pattern onwards transmission, after the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, three rank moulds will develop into basic mode, and export from the output terminal that pattern demultiplexer is corresponding.When basic mode inputs from the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer and thin branch-waveguide 3, the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated and the thin branch-waveguide 10 of 3rd level asymmetrical Y bifurcated simultaneously, after the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, realize the mode multiplexing of basic mode, First-Order Mode, second order mode and three rank moulds.Pattern after multiplexing is after the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation realizing three rank moulds is separated, and develop into basic mode, leave from the thin branch-waveguide 10 of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, pattern of surplus is along wide branch-waveguide 9 onwards transmission of the 1st grade of asymmetrical Y bifurcated, after the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation realizing second order mode is separated, and develop into basic mode, leave from the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated; Pattern of surplus is along wide branch-waveguide 6 onwards transmission of asymmetric 2nd grade of asymmetrical Y bifurcated, after the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation realizing First-Order Mode is separated, and develop into basic mode, leave from the thin branch-waveguide 3 of 3rd level asymmetrical Y bifurcated, remaining basic mode leaves from the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated, thus the demultiplexing of implementation pattern.
Claims (4)
1. the N pattern multiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, it is characterized in that every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide is equal with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the wide branch-waveguide of trunk waveguide and kth+1 grade of asymmetrical Y bifurcated of kth level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the wide branch-waveguide of kth+1 grade of asymmetrical Y bifurcated is greater than the width of the trunk waveguide of kth level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
2. a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure according to claim 1, it is characterized in that being formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise waveguide body and substrate respectively, described waveguide body comprises sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
3. the N pattern demultiplexer based on asymmetrical Y bifurcation structure, formed by the cascade of N-1 asymmetrical Y bifurcated, it is characterized in that every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide is equal with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of kth level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated is all equal and its width only supports that basic mode transmits, the width of the trunk waveguide of kth+1 grade of asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of kth level asymmetrical Y bifurcated, the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the wide branch-waveguide of N-1 level asymmetrical Y bifurcated is provided with mould spot transformational structure, wherein N >=3, k=1,2 ..., N-2.
4. a kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure according to claim 3, it is characterized in that being formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise waveguide body and substrate respectively, described waveguide body comprises sandwich layer and is coated on the covering outside described sandwich layer, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5375178A (en) * | 1993-02-02 | 1994-12-20 | Koninklijke Ptt Nederland N.V. | Integrated optical polarization manipulating device |
| US5539850A (en) * | 1994-12-30 | 1996-07-23 | At&T Corp. | Polarization and wavelength independent optical waveguide tap |
| CN1952708A (en) * | 2005-10-18 | 2007-04-25 | 日立电线株式会社 | Waveguide type optical branching device |
-
2013
- 2013-10-12 CN CN201310477421.9A patent/CN103576238B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5375178A (en) * | 1993-02-02 | 1994-12-20 | Koninklijke Ptt Nederland N.V. | Integrated optical polarization manipulating device |
| US5539850A (en) * | 1994-12-30 | 1996-07-23 | At&T Corp. | Polarization and wavelength independent optical waveguide tap |
| CN1952708A (en) * | 2005-10-18 | 2007-04-25 | 日立电线株式会社 | Waveguide type optical branching device |
Non-Patent Citations (1)
| Title |
|---|
| Mode division multiplexed（MDM）waveguide link scheme with cascaded Y-junctions;Alexander M. Bratkovsky等;《Optics Communications》;20130711;第309卷;85-89 * |
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