CN103576238A - N-mode multiplexer/demultiplexer based on asymmetric Y-furcate structure - Google Patents
N-mode multiplexer/demultiplexer based on asymmetric Y-furcate structure Download PDFInfo
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Abstract
The invention discloses an N-mode multiplexer/demultiplexer based on an asymmetric Y-furcate structure. The N-mode multiplexer/demultiplexer is formed by cascade connection of N-1 asymmetric Y furcates. Each asymmetric Y furcate comprises a main waveguide, a wide branching waveguide and a thin branching waveguide. The wide branching waveguides are larger than the thin branching waveguides in width. The sum of the widths of the wide branching waveguides and the widths of the thin branching waveguides is equal to the widths of the main waveguides. The included angles of the positions where the wide branching waveguides are intersected with the thin branching waveguides are smaller than 1 degree. The main waveguides and the wide branching waveguides of two adjacent asymmetric Y furcates are connected through tapered heat insulation waveguides. The widths of the main waveguides of the two adjacent asymmetric Y furcates are different. The N-mode multiplexer/demultiplexer has the advantages of achieving transmission of a plurality of data channels, being large in bandwidth and low in loss and crosstalk, and the like.
Description
Technical field
The present invention relates to a kind of multiplexing demultiplexing device, especially relate to a kind of N mode multiplexing/demodulation multiplexer based on asymmetrical Y bifurcation structure.
Background technology
Along with the rapid growth of internet data flow, optical link capacity is badly in need of amplification.The mode that expands at present optical link capacity comprises space division multiplexing technology, wavelength-division multiplex technique, polarization multiplexing and mode multiplexing technology.Wherein, in mode multiplexing technology each optical mode can be used as one independently channel carry out data transmission, possess the advantage of flexible processing eigenmodes, become at present the important solution route that improves the message capacity of single link in light interconnection.
As the Primary Component of mode multiplexing transmission system, mode multiplexing/demodulation multiplexer causes increasing concern in recent years.The structure that traditional mode multiplexing/demodulation multiplexer adopts mainly contains Y bifurcated shunt, multi-mode interference coupler, the asymmetric directional coupler of cascade and cascade multimode grating auxiliary coupler.Traditional mode multiplexing demultiplexing device based on Y bifurcated shunt and multi-mode interference coupler only can be realized two data transmission channels, limited to the amplification of optical link capacity.The traditional mode multiplexing demultiplexing device of the traditional mode multiplexing demultiplexing device based on the asymmetric directional coupler of cascade and cascade multimode grating auxiliary coupler can be realized a plurality of (more than two and two) data channel transmission, is current existing mode multiplexing/demodulation multiplexer.But, traditional mode multiplexing demultiplexing device based on the asymmetric directional coupler of cascade needs coupling length and the intensity of accurately controlling asymmetric directional coupler could realize a plurality of data channel transmission, traditional mode multiplexing demultiplexing device based on cascade multimode grating auxiliary coupler is limited to the bandwidth of grating auxiliary coupler self, although can realize a plurality of data channel transmission, the amplification of optical link capacity is limited.Therefore, although the traditional mode multiplexing demultiplexing device of the traditional mode multiplexing demultiplexing device based on the asymmetric directional coupler of cascade and cascade multimode grating auxiliary coupler can increase to optical link capacity by a plurality of data channel transmission, but the amplification of optical link capacity is all limited to self device performance, and the amplification of optical link capacity is more limited.
In optical fiber transmission technique, asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, and wherein the width of wide branch-waveguide is greater than the width of thin branch-waveguide, and both have different effective refractive indexs.Asymmetrical Y bifurcated has been utilized and has been designed to the function elements such as wavelength multiplexer, polarization splitter and pattern sorter at present.When utilizing asymmetrical Y bifurcated to realize the pattern sorter of two patterns, the transmission of basic mode in the thin branch-waveguide of asymmetrical Y bifurcated is during through bifurcated, can encourage the single order pattern in the trunk waveguide of asymmetrical Y bifurcated.Therefore, utilize asymmetrical Y bifurcated to realize basic mode in thin branch-waveguide and excite the higher order mode in trunk waveguide, asymmetrical Y bifurcated is applied to and in mode multiplexing/demodulation multiplexer, realizes a plurality of data channel transmission and have realistic meaning.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of N mode multiplexing/demodulation multiplexer based on asymmetrical Y bifurcation structure, and this N mode multiplexing/demodulation multiplexer can be realized a plurality of data channel transmission, and has large bandwidth, low-loss and the low feature such as crosstalk.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, by the cascade of N-1 asymmetrical Y bifurcated, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide equates with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of k level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k+1 level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the wide branch-waveguide of k+1 level asymmetrical Y bifurcated is greater than the width of the trunk waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
A kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, by the cascade of 3 asymmetrical Y bifurcateds, formed, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise respectively waveguide body and substrate, described waveguide body comprises sandwich layer and is coated on the covering in described sandwich layer outside, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the wide branch-waveguide of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
A kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, by the cascade of N-1 asymmetrical Y bifurcated, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide equates with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of k+1 level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the trunk waveguide of k+1 level asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and N-1 level asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
A kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, by the cascade of 3 asymmetrical Y bifurcateds, formed, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise respectively waveguide body and substrate, described waveguide body comprises sandwich layer and is coated on the covering in described sandwich layer outside, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the wide branch-waveguide of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
Compared with prior art, the advantage of N pattern multiplexer of the present invention is the cascade of N-1 asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, in N pattern multiplexer, the width of the wide branch-waveguide of k+1 level asymmetrical Y bifurcated is greater than the width of the trunk waveguide of k level asymmetrical Y bifurcated, the trunk waveguide of k level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k+1 level asymmetrical Y bifurcated, the width that guarantees thus the wide branch-waveguide of each asymmetrical Y bifurcated is supported multimode transmission, the multimode transmission that the width of the wide branch-waveguide of n level asymmetrical Y bifurcated is supported comprises n rank pattern and n+1 rank pattern, the effective index of fundamental mode that the thin branch-waveguide of every grade of asymmetrical Y bifurcated is supported is between the effective refractive index of n rank pattern and the effective refractive index of n+1 rank pattern, n=1, 2, N-1.Thereby when the basic mode transmission of the thin branch-waveguide of asymmetrical Y bifurcated is during through its bifurcated, according to pattern effective refractive index matching principle, can evoke the trunk waveguide higher order mode of asymmetrical Y bifurcated, angle between the wide branch-waveguide of asymmetrical Y bifurcated and thin branch-waveguide is less than the thermal insulation transmission of 1 degree Assured Mode, obtain thus large bandwidth, low-loss and low N pattern multiplexer of crosstalking, realize a plurality of data channel transmission, expand optical link message capacity.
Compared with prior art, the advantage of N pattern demultiplexer of the present invention is the cascade of N-1 asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, in N pattern demultiplexer, the width of the trunk waveguide of k+1 level asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of k level asymmetrical Y bifurcated, the trunk waveguide of k+1 level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k level asymmetrical Y bifurcated, the width that guarantees thus the wide branch-waveguide of each asymmetrical Y bifurcated is supported multimode transmission, the multimode transmission that the width of the wide branch-waveguide of n level asymmetrical Y bifurcated is supported comprises n rank pattern and n+1 rank pattern, the effective index of fundamental mode that the thin branch-waveguide of every grade of asymmetrical Y bifurcated is supported is between the effective refractive index of n rank pattern and the effective refractive index of n+1 rank pattern, n=1, 2, N-1.Thereby when the higher order mode transmission of the trunk waveguide of asymmetrical Y bifurcated is during through its bifurcated, according to pattern effective refractive index matching principle, can develop into the basic mode of the thin branch-waveguide of asymmetrical Y bifurcated, the residue low step mode of the trunk waveguide of asymmetrical Y bifurcated will continue transmission forward, angle between the wide branch-waveguide of asymmetrical Y bifurcated and thin branch-waveguide is less than the thermal insulation transmission of 1 degree Assured Mode, obtain thus large bandwidth, low-loss and low N pattern demultiplexer of crosstalking, realize a plurality of data channel transmission, expand optical link message capacity.
Accompanying drawing explanation
Fig. 1 is the structural representation of the N pattern multiplexer based on asymmetrical Y bifurcation structure of the present invention;
Fig. 2 is the structural representation of the N pattern demultiplexer based on asymmetrical Y bifurcation structure of the present invention;
Fig. 3 is the structural representation of asymmetrical Y bifurcated of the 1st grade of N pattern multiplexer or the structural representation of the asymmetrical Y bifurcated of N pattern demultiplexer 3rd level;
Fig. 4 is the 1st grade of N pattern multiplexer and the structural representation of asymmetrical Y bifurcated of the 2nd grade or the structural representation of the asymmetrical Y bifurcated of the 2nd grade of N pattern demultiplexer and 3rd level;
Fig. 5 is the structural representation of the asymmetrical Y bifurcated of N pattern multiplexer or the 1st grade, the 2nd grade of N pattern demultiplexer and 3rd level;
Fig. 6 be the trunk waveguide of asymmetrical Y bifurcated, wide branch-waveguide or thin branch-waveguide along A-A ˊ to cut-open view;
Fig. 7 is the structural representation of pattern multiplexer cascade pattern demultiplexer.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
The invention discloses a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure, by the cascade of N-1 asymmetrical Y bifurcated, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide equates with the width of trunk waveguide, angle between wide branch-waveguide and thin branch-waveguide is less than 1 degree, the trunk waveguide of k level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k+1 level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the wide branch-waveguide of k+1 level asymmetrical Y bifurcated is greater than the width of the trunk waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
Embodiment: as shown in Figure 1, a kind of 4 pattern multiplexer based on asymmetrical Y bifurcation structure, by the cascade of 3 asymmetrical Y bifurcateds, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide equates with the width of trunk waveguide, angle α between the wide branch-waveguide of every grade of asymmetrical Y bifurcated and thin branch-waveguide is 0.8 degree, the port of the wide branch-waveguide of the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure 1, the 1st grade of asymmetrical Y bifurcated is by trunk waveguide 4, wide branch-waveguide 2 and thin branch-waveguide 3 form, the 2nd grade of asymmetrical Y bifurcated is by trunk waveguide 8, wide branch-waveguide 6 and thin branch-waveguide 7 form, 3rd level asymmetrical Y bifurcated is by trunk waveguide 11, wide branch-waveguide 9 and thin branch-waveguide 10 form, the wide branch-waveguide 6 of the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated and the 2nd grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5, the wide branch-waveguide 9 of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5.As shown in Fig. 3～Fig. 5, the width W of the thin branch-waveguide of every grade of asymmetrical Y bifurcated
0be 5 microns, the width W of the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated
1be 13 microns, the width of the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated is W
1-W
0=8 microns, the width W of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated
2be 22 microns, the width of the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated is W
2-W
0=17 microns, the width W of the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated
3be 30 microns, the width of the wide branch-waveguide 9 of 3rd level asymmetrical Y bifurcated is W
3-W
0=25 microns, the length L of the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated
0, the 2nd grade of asymmetrical Y bifurcated the length L of wide branch-waveguide 6
1length L with the wide branch-waveguide 9 of 3rd level asymmetrical Y bifurcated
2be 5000 microns.As shown in Figure 6, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide are SiO
2channel waveguide, comprise respectively waveguide body and substrate 14, waveguide body comprises sandwich layer 13 and is coated on the covering 12 in sandwich layer 13 outsides, substrate 14 is fixed on the bottom of covering 12, and the material of sandwich layer 13 is doping silicon dioxide, and the material of covering 12 is pure silicon dioxide, the material of substrate 14 is silicon, the refractive index of covering 12 is 1.45, and sandwich layer 13 is 0.01 with the refringence of covering 12, and the refractive index of substrate 14 is 3.45.
In 4 pattern multiplexer based on asymmetrical Y bifurcation structure of the present embodiment, the mould spot transformational structure 1 that the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated arranges is as the input end of pattern multiplexer, and the port of the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated is as the output terminal of pattern multiplexer.
The invention also discloses a kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure, by the cascade of N-1 asymmetrical Y bifurcated, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide equates with the width of trunk waveguide, angle between wide branch-waveguide and thin branch-waveguide is less than 1 degree, the trunk waveguide of k+1 level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the trunk waveguide of k+1 level asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
Embodiment: as shown in Figure 2, a kind of 4 pattern demultiplexer based on asymmetrical Y bifurcation structure, a kind of 4 pattern multiplexer based on asymmetrical Y bifurcation structure, by the cascade of 3 asymmetrical Y bifurcateds, formed, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of wide branch-waveguide is greater than the width of thin branch-waveguide, the width sum of wide branch-waveguide and thin branch-waveguide equates with the width of trunk waveguide, angle α between the wide branch-waveguide of every grade of asymmetrical Y bifurcated and thin branch-waveguide is 0.8 degree, the port of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and and the port of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated be provided with mould spot transformational structure 1, 3rd level asymmetrical Y bifurcated is by trunk waveguide 4, wide branch-waveguide 2 and thin branch-waveguide 3 form, the 2nd grade of asymmetrical Y bifurcated is by trunk waveguide 8, wide branch-waveguide 6 and thin branch-waveguide 7 form, the 1st grade of asymmetrical Y bifurcated is by trunk waveguide 11, wide branch-waveguide 9 and thin branch-waveguide 10 form, the wide branch-waveguide 6 of the trunk waveguide 4 of 3rd level asymmetrical Y bifurcated and the 2nd grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5, the wide branch-waveguide 9 of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is connected by an adiabatic tapered transmission line 5.As shown in Fig. 3～Fig. 5, the width W of the thin branch-waveguide of every grade of asymmetrical Y bifurcated
0be 5 microns, the width W of the trunk waveguide 4 of 3rd level asymmetrical Y bifurcated
1be 13 microns, the width of the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated is W
1-W
0=8 microns, the width W of the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated
2be 22 microns, the width of the wide branch-waveguide 6 of the 2nd grade of asymmetrical Y bifurcated is W
2-W
0=17 microns, the width W of the trunk waveguide 11 of the 1st grade of asymmetrical Y bifurcated
3be 30 microns, the width of the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated is W
3-W
0=25 microns, the length L of the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated
0, the 2nd grade of asymmetrical Y bifurcated the length L of wide branch-waveguide 6
1length L with the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated
2be 5000 microns.As shown in Figure 6, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide are SiO
2channel waveguide, comprise respectively waveguide body and substrate 14, waveguide body comprises sandwich layer 13 and is coated on the covering 12 in sandwich layer 13 outsides, substrate 14 is fixed on the bottom of covering 12, and the material of sandwich layer 13 is doping silicon dioxide, and the material of covering 12 is pure silicon dioxide, the material of substrate 14 is silicon, the refractive index of covering 12 is 1.45, and sandwich layer 13 is 0.01 with the refringence of covering 12, and the refractive index of substrate 14 is 3.45.
In 4 pattern demultiplexer based on asymmetrical Y bifurcation structure of the present embodiment, the mould spot transformational structure 1 that the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated arranges is as the output terminal of pattern multiplexer, and the port of the trunk waveguide 11 of the 1st grade of asymmetrical Y bifurcated is as the input end of pattern multiplexer.
As shown in Figure 7, the output terminal of 4 pattern multiplexer based on asymmetrical Y bifurcation structure of above-described embodiment is docked with the input end of 4 pattern demultiplexer based on asymmetrical Y bifurcated, obtain a kind of mode multiplexing transmission system.The principle of work of this mode multiplexing transmission system is: when basic mode is from wide branch-waveguide 2 inputs of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, will export from output terminal corresponding to pattern demultiplexer, whole process maintains single mode transport; When basic mode is inputted from the thin branch-waveguide 3 of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer, by the First-Order Mode having encouraged in the trunk waveguide 4 of the 1st grade of asymmetrical Y bifurcated, this pattern is transmitted forward, after the bifurcated of 3rd level asymmetrical Y bifurcated corresponding to pattern demultiplexer, First-Order Mode will develop into basic mode, and from output terminal output corresponding to pattern demultiplexer; When basic mode is inputted from the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern multiplexer, by the second order mode having encouraged in the trunk waveguide 8 of the 2nd grade of asymmetrical Y bifurcated, this pattern is transmitted forward, until meet after the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern demultiplexer, second order mode will develop into basic mode, and from output terminal output corresponding to pattern demultiplexer; When basic mode is inputted from the thin branch-waveguide 10 of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, when the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, by the three rank moulds that encouraged in the trunk waveguide 11 of 3rd level asymmetrical Y bifurcated, this pattern is transmitted forward, after the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, three rank moulds will develop into basic mode, and from output terminal output corresponding to pattern demultiplexer.When basic mode is inputted with thin branch-waveguide 3, the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated and the thin branch-waveguide 10 of 3rd level asymmetrical Y bifurcated from the wide branch-waveguide 2 of the 1st grade of asymmetrical Y bifurcated of pattern multiplexer simultaneously, after the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern multiplexer, realize the mode multiplexing of basic mode, First-Order Mode, second order mode and three rank moulds.Pattern after multiplexing is after the bifurcated of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation that realizes three rank moulds is separated, and develop into basic mode, from the thin branch-waveguide 10 of the 1st grade of asymmetrical Y bifurcated of pattern demultiplexer, leave, pattern of surplus transmits forward along the wide branch-waveguide 9 of the 1st grade of asymmetrical Y bifurcated, after the bifurcated of the 2nd grade of asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation that realizes second order mode is separated, and develop into basic mode, from the thin branch-waveguide 7 of the 2nd grade of asymmetrical Y bifurcated, leave; Pattern of surplus transmits forward along the wide branch-waveguide 6 of asymmetric the 2nd grade of asymmetrical Y bifurcated, after the bifurcated of the 3rd level asymmetrical Y bifurcated of pattern demultiplexer, the thermal insulation that realizes First-Order Mode is separated, and develop into basic mode, from the thin branch-waveguide 3 of 3rd level asymmetrical Y bifurcated, leave, remaining basic mode leaves from the wide branch-waveguide 2 of 3rd level asymmetrical Y bifurcated, thus the demultiplexing of implementation pattern.
Claims (4)
1. the N pattern multiplexer based on asymmetrical Y bifurcation structure, it is characterized in that being formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide equates with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of k level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k+1 level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the wide branch-waveguide of k+1 level asymmetrical Y bifurcated is greater than the width of the trunk waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and the 1st grade of asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
2. a kind of N pattern multiplexer based on asymmetrical Y bifurcation structure according to claim 1, it is characterized in that being formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise respectively waveguide body and substrate, described waveguide body comprises sandwich layer and is coated on the covering in described sandwich layer outside, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the wide branch-waveguide of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
3. the N pattern demultiplexer based on asymmetrical Y bifurcation structure, it is characterized in that being formed by the cascade of N-1 asymmetrical Y bifurcated, every grade of asymmetrical Y bifurcated comprises trunk waveguide, wide branch-waveguide and thin branch-waveguide, the width of described wide branch-waveguide is greater than the width of described thin branch-waveguide, the width sum of described wide branch-waveguide and described thin branch-waveguide equates with the width of described trunk waveguide, the angle of described wide branch-waveguide and described thin branch-waveguide intersection is less than 1 degree, the trunk waveguide of k+1 level asymmetrical Y bifurcated is connected by adiabatic tapered transmission line with the wide branch-waveguide of k level asymmetrical Y bifurcated, the width of the thin branch-waveguide of each asymmetrical Y bifurcated all equates and its width is only supported basic mode transmission, the width of the trunk waveguide of k+1 level asymmetrical Y bifurcated is less than the width of the wide branch-waveguide of k level asymmetrical Y bifurcated, the port of the wide branch-waveguide of the thin branch-waveguide of every grade of asymmetrical Y bifurcated and N-1 level asymmetrical Y bifurcated is provided with mould spot transformational structure, N >=3 wherein, k=1,2 ..., N-2.
4. a kind of N pattern demultiplexer based on asymmetrical Y bifurcation structure according to claim 3, it is characterized in that being formed by the cascade of 3 asymmetrical Y bifurcateds, the trunk waveguide of every grade of asymmetrical Y bifurcated, wide branch-waveguide and thin branch-waveguide comprise respectively waveguide body and substrate, described waveguide body comprises sandwich layer and is coated on the covering in described sandwich layer outside, described substrate is fixed on the bottom of described covering, the material of described sandwich layer is doping silicon dioxide, the material of described covering is pure silicon dioxide, the material of described substrate is silicon, the width of the thin branch-waveguide of every grade of asymmetrical Y bifurcated is 5 microns, the width of the wide branch-waveguide of 3rd level asymmetrical Y bifurcated is 8 microns, the width of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated is 17 microns, the width of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated is 25 microns, the length of the wide branch-waveguide of the 1st grade of asymmetrical Y bifurcated, the length of the wide branch-waveguide of the length of the wide branch-waveguide of the 2nd grade of asymmetrical Y bifurcated and 3rd level asymmetrical Y bifurcated is all not less than 5000 microns.
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Cited By (6)
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| CN104503022A (en) * | 2014-12-10 | 2015-04-08 | 宁波大学 | Full-optical encoder based on Y-branch |
| CN104503022B (en) * | 2014-12-10 | 2017-05-03 | 宁波大学 | Full-optical encoder based on Y-branch |
| CN105676352A (en) * | 2016-01-15 | 2016-06-15 | 宁波大学 | Three-port mode interval separator |
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| CN111679385A (en) * | 2020-06-04 | 2020-09-18 | 无锡市芯飞通光电科技有限公司 | Method for realizing wavelength insensitive uneven light splitting splitter |
| CN113612539A (en) * | 2021-08-27 | 2021-11-05 | 中国地质大学（武汉） | Silicon optical transmitter chip structure integrating multiplexing and modulating functions |
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