CN104393926A - Transmitter module for mode multiplexing-wavelength division multiplexing - Google Patents

Transmitter module for mode multiplexing-wavelength division multiplexing Download PDF

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CN104393926A
CN104393926A CN201410632695.5A CN201410632695A CN104393926A CN 104393926 A CN104393926 A CN 104393926A CN 201410632695 A CN201410632695 A CN 201410632695A CN 104393926 A CN104393926 A CN 104393926A
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waveguide
port
node unit
power splitter
output
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CN104393926B (en
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戴道锌
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

The invention discloses a transmitter module for mode multiplexing-wavelength division multiplexing. Each node cell of a node cell array is provided with four ports, which are a first port, a second port, a third port and a fourth port that are used for receiving unmodulated light, adjacent node cells are connected by corresponding ports so as to form an N*M array, the first ports of the row of node cells at the edge of the node cell array are respectively connected with output ends of N laser cells of a laser array, the fourth ports of the row of node cells at the edge of the node cell array are respectively connected with M input ends of an M channel mode multiplexer, and the output end of the M channel mode multiplexer is connected with output multimode waveguide. The transmitter module has the advantages of being concise and compact in structure and convenient in design, having little waveguide cross, and being beneficial to lowering insertion loss and channel crosstalk, and realizes two-dimension multiplexing of mode and wavelength.

Description

A kind of for mode multiplexing-wavelength division multiplexing transmitter module
Technical field
The present invention relates to a kind of planar optical waveguide integrated device, especially relate to a kind of for mode multiplexing-wavelength division multiplexing transmitter module.
Background technology
As everyone knows, long-distance optical communication obtains immense success.Similarly, light network, as a kind of new mutual contact mode, can overcome the bottleneck problem of the interconnected existence of traditional electrical, attract wide attention.Since J.W.Goodman in 1984 proposes to adopt light network scheme in VLSI, light network research has achieved huge progress.Current light network is constantly to the interconnected propelling of very-short-reach, and its traffic capacity demands is growing.For the feature that optical interconnection system volume of transmitted data is large, the most direct method uses wavelength division multiplexing (WDM) technology conventional in long-distance optical fiber communication system.But due to the restriction of the factors such as laser array cost and system complexity, the available channel a few days of dense wavelength division multiplexing system hastens towards saturation.Therefore, need the multiplex technique that development is new badly, thus increase signal channel further.Mode multiplexing technology is the multiplex technique again come into one's own recent years, its general principle utilizes the multiple orthogonal modess in multimode fiber or multimode waveguide to carry signal respectively to carry out multi-channel data transmission, and its core devices is pattern (solution) multiplexer.Some emerging mode multiplexing-demultiplexing devices are have developed in the past few years.Such as, document [Maxim Greenberg etc., " Simultaneous dual mode add/drop multiplexers for optical interconnectsbuses, " Optics Communications 266 (2006) 527 – 531] devise a kind of bimodulus add/drop multiplexer based on single polarization of power gradual change (adiabatic power transfer) principle, but it designs complexity, be not easy to expand, document [S.Bagheri, and William M.J.Green " Silicon-on-insulatormode-selective add-drop unit for on-chip mode-division multiplexing, " 6th IEEEInternational Conference on Group IV Photonics, 2009 (GFP'09), Page (s): 166-168, 9-11 Sept.2009] give a kind of bimodulus add/drop multiplexer based on multilevel mode coupling, but only achieve the multiplexing of basic mode and the first high-rder mode, its complex structure, design inconvenience, device size is large, and be not easy to expansion, document [Daoxin Dai, Jian Wang, and Yaocheng Shi, " Silicon mode (de) multiplexerenabling high capacity photonic networks-on-chip with a single-wavelength-carrierlight, " Opt.Lett.38,1422-1424 (2013)] provide a kind of multi-channel mode multiplexing device based on cascade asymmetric coupler structure, document [J.Wang, S.He, and D.Dai.On-chip silicon 8-channelhybrid (de) multiplexer enabling simultaneous mode-and polarization-division-multiplexing.Laser & Photonics Reviews.8 (2): L18 – L22,2014] a kind of dual-polarization mode multiplexing device of 8 passages is provided.
It should be noted that mode multiplexing-demultiplexing device itself is also just paid close attention in these researchs.In order to obtain more multichannel thus really promote message capacity, mode multiplexing should be combined with wavelength division multiplexing, its Primary Component is then novel hybrid multiplex-demodulation multiplexer.More direct mode is directly combined with multiple wavelength division multiplex device (as array waveguide grating) by mode multiplexing device, but during by integrated to this hybrid multiplex device and laser array, light modulator arrays formation transmitter module, there is crossing many, the problem that device size is excessive of waveguide.
Summary of the invention
In order to solve Problems existing in background technology, the object of the invention is to provide a kind of for mode multiplexing-wavelength division multiplexing transmitter module.
The technical solution used in the present invention is:
The present invention includes laser array, the node unit array ading up to N × M in N × M array arrangement, the M channel pattern multiplexer with M input and the output multimode waveguide with N number of laser element of linearly arranging; Each node unit in node unit array all has four ports, four ports be respectively the first port for receiving unmodulated light, for receive one or more multiplexing modulated light signal the second port, for exporting the 3rd port of unmodulated light and the 4th port for exporting one or more multiplexing modulated light signal; N × M array arrangement is connected to form by port corresponding separately, altogether the capable N row of M between adjacent node unit; The first port being positioned at a line node unit of node unit array edges is connected separately with the output of N number of laser element of laser array respectively, and this row node unit the first port be not connected with other node units; The 4th port being positioned at a row node unit of node unit array edges is connected separately with M input of M channel pattern multiplexer respectively, and this row node unit the 4th port be not connected with other node units; The output of M channel pattern multiplexer is connected with output multimode waveguide.
Four ports of described node unit lay respectively at the direction, four sides of upper and lower, left and right, and four ports of node unit are respectively lower port, left port, upper port, right output port; Port by facing separately between adjacent node unit is connected to form N × M array arrangement; The lower port being positioned at N number of node unit of bottom row or top line is connected separately with the output of N number of laser element of laser array respectively, the right output port being positioned at N number of node unit of right column or left column is connected separately with M input of M channel pattern multiplexer respectively, and the output of M channel pattern multiplexer is connected with output multimode waveguide.
Described each node unit all comprises 1 × 2 power splitter, the one 2 × 2 power splitter, the 22 × 2 power splitter, the first connection waveguide, second connects waveguide, the 3rd connection waveguide, the 4th connection waveguide, the 5th connects waveguide, the 6th connection waveguide, the 7th connects waveguide, optical modulator is connected waveguide with the 8th; The input of 1 × 2 power splitter is connected with the 8th one end being connected waveguide, and the 8th connects the other end of waveguide as lower port; An output of 1 × 2 power splitter is connected waveguide and is connected with first, another output of 1 × 2 power splitter connects waveguide through the 4th and is connected with one end of optical modulator, the other end of optical modulator connects waveguide by the 7th and is connected with an input of the one 2 × 2 power splitter, another input of one 2 × 2 power splitter connects waveguide by the 6th and is connected with an output of the 22 × 2 power splitter, and another output of the 22 × 2 power splitter is connected waveguide and is connected with the 3rd; Input of the 22 × 2 power splitter is connected waveguide with second and connects, and another input of the 22 × 2 power splitter connects waveguide by the 5th and is connected with an output of the one 2 × 2 power splitter; First connects waveguide and second is connected waveguide and intersects, and the other end of the first connection waveguide, the second connection waveguide extends and separately respectively as upper port, left port; 3rd other end connecting waveguide extends as lower port.
1 × 2 described power splitter has non-uniform power allocation proportion, be arranged in node unit array and have same power sharing ratio with 1 × 2 power splitter of all node units of a line, 1 × 2 power splitter being arranged in each node unit of same column has different power sharing ratio separately; For each node unit of same column in node unit array, the power output of another output of each 1 × 2 power splitter is 1/ (M+1-m) of the incident gross power of 1 × 2 power splitter input, m is the ordinal number of same row interior joint unit, M is the sum of a row interior joint unit, m=1,, M.
The one 2 × 2 power splitter in described node unit, the 5th connects waveguide, the 22 × 2 power splitter is connected waveguide connected looping chamber successively with the 6th, and the annular chamber that the node unit being arranged in same column is formed has identical resonance wavelength; The annular chamber that the node unit being arranged in colleague is formed has different resonance wavelength separately, and each resonance wavelength constitutes the wavelength sequence that uniform intervals increases progressively or successively decreases.
Described output multimode waveguide supports at least M pattern.
Described optical modulator utilizes the signal of telecommunication to modulate its optical field amplitude or position phase.
Described optical modulator is have the structure of carrier concentration controllable PN junction area waveguide or have the structure of graphene coated waveguide; The regulatable PN junction area waveguide of carrier concentration is carrier injection type, carrier depletion type or carrier electric charge accumulation type.
1 × 2 described power splitter, the one 2 × 2 power splitter or the 22 × 2 power splitter are directional coupler, multi-mode interference coupler or Liriodendron chinese type coupler.
Described first connects waveguide is connected waveguide infall and contains and reduce the wastage and the waveguide chi structure of crosstalk with second.
The beneficial effect that the present invention has is:
The present invention have simple for structure compact, design is convenient and waveguide intersects few, be conducive to the advantage reducing insertion loss and channels crosstalk, and achieve the hybrid multiplex of pattern, wavelength two dimensions, thus super multichannel number can be obtained.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the schematic diagram of node unit structure of the present invention.
Fig. 3 is the fiber waveguide schematic cross-section of optical modulation region in carrier injection type optical modulator.
Fig. 4 is the fiber waveguide schematic cross-section of optical modulation region in carrier depletion type optical modulator.
Fig. 5 is the fiber waveguide schematic cross-section of optical modulation region in carrier accumulation type optical modulator.
Fig. 6 is the fiber waveguide schematic cross-section of optical modulation region in the optical modulator based on Graphene.
Fig. 7 is the structural representation of 1 × 2 power splitter adopting directional coupler:
Fig. 8 is the structural representation of 1 × 2 power splitter adopting multi-mode interference coupler:
Fig. 9 is the structural representation of 1 × 2 power splitter adopting Mach-Zehnder interferometer:
Figure 10 is the example structure schematic diagram of node unit of the present invention.
Figure 11 is for being the final microstructural schematic diagram of the embodiment of the present invention.
In figure: 1, laser array, 3, node unit array, 4, M channel pattern multiplexer, 5, multimode waveguide, 1n, laser element, 3mn, node unit, 3mn1, lower port, 3mn2, left port, 3mn3, upper port, 3mn4, right output port, 3mn5, 1 × 2 power splitter, 3mn6, one 2 × 2 power splitter, 3mn7, 22 × 2 power splitter, 3mn8, first connects waveguide, 3mn9, second connects waveguide, 3mn10, 3rd connects waveguide, 3mn11, 4th connects waveguide, 3mn12, 5th connects waveguide, 3mn13, 6th connects waveguide, 3mn14, 7th connects waveguide, 3mn15, optical modulator, 3mn16, 8th connects waveguide, 11, 12, 13, 1N represents each laser element, 21, waveguide core district, 22, P+ type doped region, 23, N+ type doped region, 24, P type doped region, 25, N-type doped region, 26, SiO2 barrier layer, 27, separator, 28, Graphene, 29, metal electrode, 61, input, 62, output, 63, coupled zone, 64, multiple-mode interfence district, 65,1 × 2 coupler, 66,2 × 2 couplers, the 67, first Liriodendron chinese arm, the 68, second Liriodendron chinese arm.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, the present invention includes have N number of linearly arrange laser element 11,12,13 ..., 1N laser array 1, the node unit array 311 ading up to N × M in N × M array arrangement, 312 ..., 31N, 321,322 ..., 32N ..., 3M1,3M2 ..., 3MN, have M input M channel pattern multiplexer 4 and export multimode waveguide 5; M is the line number of node unit array, and N is the columns of node unit array.
Each node unit 311 in node unit array, 312, 31N, 321, 322, 32N, 3M1, 3M2, 3MN all has four ports, for the node unit 3mn in Fig. 1, four ports are respectively the first port 3mn1 for receiving unmodulated light, for receiving the second port 3mn2 of one or more multiplexing modulated light signal, for exporting the 3rd port 3mn3 of unmodulated light and the 4th port 3mn4 for exporting one or more multiplexing modulated light signal, m is the ordinal number of same column lower node unit, n is the ordinal number of colleague's lower node unit, m=1, M, n=1, N, N × M array arrangement is connected to form by port corresponding separately, altogether the capable N row of M between adjacent node unit, the first port being positioned at a line node unit of node unit array edges is connected separately with the output of N number of laser element of laser array 1 respectively, and this row node unit the first port be not connected with other node units, the 4th port being positioned at a row node unit of node unit array edges is connected separately with M input of M channel pattern multiplexer 4 respectively, and this row node unit the 4th port be not connected with other node units, the output of M channel pattern multiplexer 4 is connected with output multimode waveguide 5.
As shown in Figure 2, four ports of preferred node unit lay respectively at the direction, four sides of upper and lower, left and right, four ports of node unit 3mn, first port, the second port, the 3rd port and the 4th port are respectively lower port 3mn1, left port 3mn2, upper port 3mn3 and right output port 3mn4, m=1 ..., M, n=1,, N; Port by facing separately between adjacent node unit is connected to form N × M array arrangement; The lower port being positioned at N number of node unit of bottom row or top line is connected separately with the output of N number of laser element of laser array 1 respectively, the right output port being positioned at N number of node unit of right column or left column is connected separately with M input of M channel pattern multiplexer 4 respectively, and the output of M channel pattern multiplexer 4 is connected with output multimode waveguide 5.
Be connected for upper port 3 (m+1) n3 of the lower port 3mn1 of m capable n-th row node unit 3mn, node unit 3mn node unit 3 (m-1) n adjacent with below; Lower port 3 (m+1) n1 of node unit 3 (m+1) n that the upper port 3mn3 of node unit 3mn is adjacent with top is connected; The right output port 3n (n-1) 4 of the node unit 3m (n-1) that the left port 3mn2 of node unit 3mn is adjacent with left is connected; The left port 3n (n+1) 2 of the node unit 3m (n+1) that the right output port 3mn4 of node unit 3mn is adjacent with right is connected; 1<m<M-1,1<n<N-1.
As shown in Figure 2, all comprise 1 × 2 power splitter 3mn5 for the capable n-th row node unit 3mn of m, each node unit 3mn, the one 2 × 2 power splitter 3mn6, the 22 × 2 power splitter 3mn7, first connect waveguide 3mn8, the second connection waveguide 3mn9, the 3rd connects waveguide 3mn10, the 4th connection waveguide 3mn11, the 5th connection waveguide 3mn12, the 6th connect waveguide 3mn13, the 7th connection waveguide 3mn14, optical modulator 3mn15 are connected waveguide 3mn16 with the 8th, the input of 1 × 2 power splitter 3mn5 is connected with the 8th one end being connected waveguide 3mn16, and the 8th connects the other end of waveguide 3mn16 as lower port 3mn1, an output of 1 × 2 power splitter 3mn5 is connected waveguide 3mn8 and is connected with first, 1 × 2 another output of power splitter 3mn5 connects waveguide 3mn11 through the 4th and is connected with one end of optical modulator 3mn15, the other end of optical modulator 3mn15 connects waveguide 3mn14 by the 7th and is connected with an input of the one 2 × 2 power splitter 3mn6, another input of one 2 × 2 power splitter 3mn6 connects waveguide 3mn13 by the 6th and is connected with an output of the 22 × 2 power splitter 3mn7, another output of 22 × 2 power splitter 3mn7 is connected waveguide 3mn10 and is connected with the 3rd, an input of the 22 × 2 power splitter 3mn7 is connected waveguide 3mn9 with second and connects, and another input of the 22 × 2 power splitter 3mn7 connects waveguide 3mn12 by the 5th and is connected with an output of the one 2 × 2 power splitter 3mn6, first connects waveguide 3mn8 is connected waveguide 3mn9 with second and intersects, and the other end of the first connection waveguide 3mn8, the second connection waveguide 3mn9 extends and separately respectively as upper port 3mn3, left port 3mn2, 3rd other end connecting waveguide 3mn10 extends as lower port 3mn4.
For the capable n-th row node unit 3mn of m, 1 × 2 power splitter 3mn5 has non-uniform power allocation proportion, be arranged in node unit array and have same power sharing ratio with 1 × 2 power splitter 3mn5 of all node units of a line, 1 × 2 power splitter 3mn5 being arranged in each node unit of same column has different power sharing ratio separately; For each node unit of same column in node unit array, the power output of another output of each 1 × 2 power splitter 3mn5 is 1/ (M+1-m) of the incident gross power of 1 × 2 power splitter 3mn5 input, m is the ordinal number of same column lower node unit, m is the ordinal number of same row interior joint unit, M is the sum of a row interior joint unit, m=1 ..., M.
For the capable n-th row node unit 3mn of m, the one 2 × 2 power splitter 3mn6 in node unit, the 5th connects waveguide 3mn12, the 22 × 2 power splitter 3mn7 is connected waveguide 3mn13 connected looping chamber successively with the 6th, and the annular chamber that the node unit being arranged in same column is formed has identical resonance wavelength; The annular chamber that the node unit being arranged in colleague is formed has different resonance wavelength separately, and each resonance wavelength constitutes the wavelength sequence that uniform intervals increases progressively or successively decreases.Such as uniform intervals increases progressively or the wavelength sequence of successively decreasing is λ a ~ λ b, and the resonance wavelength being positioned at the node unit looping chamber of colleague is λ n, n=1 ..., N, the resonance wavelength of each annular chamber can with wavelength sequence λ a~ λ bin each wavelength corresponding arbitrarily, order is arbitrarily.
Export multimode waveguide 5 and support at least M pattern, be respectively M the guided modes such as basic mode, the first high-rder mode, the second high-rder mode, these patterns are orthogonal, have different propagation constants.
Optical modulator 3mn15 is the device utilizing the signal of telecommunication to modulate optical field amplitude or position phase, the straight wave guide structure of the optical modulation region with electroluminescent sink effect can be adopted, also by regulating and controlling the position phase of its optical modulation region and adopting Mach-Zehnder interferometer structure or micro-ring resonant cavity configuration is to realize light modulation.In optical modulator optical modulation region can be the regulatable PN junction area waveguide of carrier concentration or be coated with the waveguide of Graphene of preferred version, as shown in Fig. 3 ~ Fig. 5, the regulatable PN junction area waveguide of carrier concentration can be carrier injection type, carrier depletion type or carrier electric charge accumulation type.
In carrier injection type optical modulator, the lightguide cross section of optical modulation region as shown in Figure 3, and P+ type doped region 22 and the two poles of the earth, N+ type doped region 23 lay respectively at the both sides in waveguide core district 21.
In carrier depletion type optical modulator, the lightguide cross section of optical modulation region as shown in Figure 4, and waveguide core district is made up of P type doped region 24 and N-type doped region 25, P +type doped region 22 and N +the two poles of the earth, type doped region 23 lay respectively at the left side of P type doped region 24, the right side of N-type doped region 25.
In carrier electric charge accumulation type optical modulator, the lightguide cross section of optical modulation region as shown in Figure 5, and waveguide core district is by P type doped region 24, N-type doped region 25 and the SiO that is positioned between the two 2barrier layer forms, P +type doped region 22 and N +the two poles of the earth, type doped region 23 lay respectively at the left side of P type doped region 24, the right side of N-type doped region 25.
Be coated with the lightguide cross section of optical modulation region in the optical modulator of Graphene as shown in Figure 6, comprise waveguide core district 21, its surface coverage has separator 27, the upper part of separator 27 is coated with Graphene 28, respectively there is metal electrode 29 both sides in waveguide core district 21, contact respectively with waveguide core district 21, Graphene 28.
Preferred 1 × 2 power splitter, the one 2 × 2 power splitter or the 22 × 2 power splitter all can be directional coupler, multi-mode interference coupler or Liriodendron chinese type coupler.
Be example for the one 2 × 2 power splitter or the 22 × 2 power splitter, as shown in Figure 7, two connect waveguides and are positioned at coupled zone, therefrom draw as four ports respectively, two outputs, 62, two inputs 61 structure of directional coupler.The coupled modes of 1 × 2 power splitter are identical, namely choose one of two inputs 61 as its input.
As shown in Figure 8, coupled zone is one section of multimode waveguide to the structure of multi-mode interference coupler, therefrom draws four ports respectively, two outputs, 62, two inputs 61.The coupled modes of 1 × 2 power splitter are identical, namely choose one of two inputs 61 as its input.
Liriodendron chinese type coupler as shown in Figure 9, comprise two inputs 61, input the different interference arm of 65, two, coupled zone length, i.e. the first Liriodendron chinese arm 67 and the second Liriodendron chinese arm 68, input coupled zone 66 and two outputs 62, change two and interfere arm lengths difference can obtain different splitting ratios.The coupled modes of 1 × 2 power splitter are identical, namely choose one of two inputs 61 as its input.
First connects waveguide 3mn8 is connected waveguide 3mn9 infall and contains and reduce the wastage and the waveguide chi structure of crosstalk with second, as shown in Figure 10, i.e. the mode transition structure of duct width broadening, to reduce loss and the crosstalk of waveguide.
The course of work of the present invention and principle as follows:
One, the function realized for node unit 3mn is:
Two parts are divided into from the continuous light of lower port 3mn1 input.Wherein a part of power proportion is (M-m)/(M-m+1), and this part light non-modulated exports from upper port; Another part luminous power proportion is 1/ (M-m+1), through ovennodulation to export from right output port after load signal.
In node unit 3mn, modulated process has wavelength selectivity, is only λ to wavelength nwavelength can produce modulation; The wavelength inputting light from left port 3mn2 all departs from this wavelength X n, can not export from right output port with being maintained the original state by secondary modulation after thus entering node unit 3mn.
Two, overall work process:
Each laser element in laser array 1 11,12,13 ..., to send centre wavelength be separately λ to 1N 1, λ 2, λ 3, λ 4..., λ n..., λ nlight.
Be described for M=4 i.e. four patterns, and consider first via wavelength X 1, the wavelength that laser sends is λ 1light enter the lower port 3111 of node unit 311, be then divided into two-way with the power ratio of 25%:75%, export from right output port 3114, upper port 3113 two parts respectively:
The light exported from right output port 3114 is light modulated, and its power proportion is be input to node unit 311 gross power 25%.This light modulated to enter from left port, mode that right output port goes out from left to right successively through node unit 312,313 ..., 31N, in the process can not by secondary modulation.Finally enter into the input of pattern multiplexer 4 first passage, and export from output multimode waveguide 5.
The light exported from upper port 3113 is non-modulation light, and its power proportion is be input to node unit 311 gross power 75%.This part light enters into the lower port of node unit 321 after upper port 3113 output, and be divided into two-way with the power ratio of 33.3%:66.7%, respectively from right output port 3214, the output of upper port 3213 two parts of node unit 321, the light exported from right output port 3214 is light modulated, and its power proportion is be input to node unit 321 gross power 33.3%.This light modulated to enter from left port, mode that right output port goes out from left to right successively through node unit 322,323 ..., 32N, in the process can not by secondary modulation.Finally enter into the input of pattern multiplexer 4 second channel, and export from output multimode waveguide 5.
The light exported from upper port 3213 is non-modulation light, and its power proportion is be input to node unit 321 gross power 66.7%.This part light enters into the lower port of node unit 331 after upper port 3213 output, and be divided into two-way with the power ratio of 50%:50%, respectively from right output port 3314, the output of upper port 3313 two parts of node unit 331, the light exported from right output port 3314 is light modulated, and its power proportion is be input to node unit 331 gross power 50%.This light modulated to enter from left port, mode that right output port goes out from left to right successively through node unit 332,333 ..., 33N, in the process can not by secondary modulation.Finally enter into the input of pattern multiplexer 4 third channel, and export from output multimode waveguide 5.
The light exported from upper port 3313 is non-modulation light, and its power proportion is be input to node unit 331 gross power 50%.This part light enters into the lower port of node unit 341 after upper port 3313 output, and be divided into two-way with the power ratio of 100%:0%, respectively from right output port 3414, the output of upper port 3413 two parts of node unit 341, the light exported from right output port 3414 is light modulated, and its power proportion is be input to node unit 341 gross power 100%.This light modulated to enter from left port, mode that right output port goes out from left to right successively through node unit 342,343 ..., 34N, in the process can not by secondary modulation.Finally enter into the input of pattern multiplexer 4 four-way, and export from output multimode waveguide 5.
Other laser sends light through similar process, and final situation is: it is λ by wavelength respectively that any one in four input channels of pattern multiplexer 4 all contains 1, λ 2, λ 3, λ 4..., λ n..., λ nthe modulation signal of 16 passages entrained by light, and pattern multiplexer 4 the most all passages of four inputs be all coupled to same waveguide and namely export multimode waveguide 5.
Three, the optical transmission process in node unit 3mn:
Be described for M=4 i.e. four patterns, and consider node unit 3mn.
As shown in Figure 2, wavelength is λ ncontinuous light enter the lower port 3mn1 of node unit 3mn, after 1 × 2 power splitter 3mn5, a point successful proportion by subtraction is the two-beam of 1:4, wherein 75% light via connecting, waveguide 3mn8 exports from upper port 3mn3, the light of 25% enters into optical modulator 3mn15 via connection waveguide 3mn11, modulated light connects waveguide 3mn14 via the 7th and enters into and connect waveguide 3mn12, the 22 × 2 power splitter 3mn7, the 6th by the one 2 × 2 power splitter 3mn6, the 5th and connect waveguide 3mn13 and to be connected successively the annular chamber formed.By relating to long initial resonant wavelength and the input optical wavelength λ making this annular chamber in chamber 1consistent.Modulated light is connected the light intensity that port that waveguide 3mn10 is connected exports and is modulated and export from right output port 3mn4 by this annular chamber from the 22 × 2 power splitter 3mn7 with the 3rd.The wavelength X of this light modulated 1with node unit 3m2 afterwards, 3m3 ..., the resonance wavelength of annular chamber is all different in 3mN, thus this light modulated to enter from left port, mode that right output port goes out from left to right successively through node unit 3m2,3m3 ..., 3mN, and enter into the input of pattern multiplexer 4 first passage, finally export from output multimode waveguide 5.
Specific embodiments of the invention are as follows:
Embodiment 1
For M=4, N=16, wherein comprise 64 node units, 4 channel pattern multiplexers.
Laser array comprises 16 laser elements, and the channel spacing of each laser element emission wavelength is Δ λ ch=1.6nm, the wavelength that wherein laser element 1n launches is λ n=1525.6nm+n Δ λ ch, n=1 ..., N.
At this, the silicon nanowires fiber waveguide based on silicon-on-insulator SOI material is selected in each connection waveguide: its sandwich layer is silicon materials, and thickness is 220nm, refractive index is 3.4744; Its under-clad layer material is SiO 2, thickness is 2 μm, refractive index is 1.4404; Its covering is air, and refractive index is 1.0.
Consider the situation of M=4, N=16,1 × 2 power splitter in node unit 3mn adopts directional coupler structure, connect waveguide 3mn12, the 22 × 2 power splitter 3mn7, the 6th by the one 2 × 2 power splitter 3mn6, the 5th and connect the waveguide 3mn13 connected annular chamber formed successively, as shown in Figure 2, required splitting ratio is obtained by choosing different coupled zones straight wave guide length.Getting duct width is w sgap between=500nm, two Luciola substriata is w g1=200nm.The S curved waveguide lateral shift chosen wherein is X sB=4 μm, length is L sB=15 μm, and choose coupled zone straight wave guide length L in 1 × 2 power splitter of node unit 31n, 32n, 33n, 34n cbe respectively 0,0.45,1.25,4.5 μm, make its merit be followed successively by 25%:75%, 33.3%:66.7%, 50%:50%, 100%:0% respectively.
It is R that the one 2 × 2 power splitter 3mn6 in node unit 3mn, the 22 × 2 power splitter 3mn7 also adopt by straight wave guide and bending radius bcircular arc waveguide form directional coupler structure, cut-off duct width w s=500nm, curved waveguide width w ringminimum gap between=800nm, two Luciola substriata is w g2=250nm.
5th connection waveguide 3mn12, the 6th connection waveguide 3mn13, the 7th connection waveguide 3mn14, optical modulator 3mn15 are all bending radius is R bcircular arc waveguide, forming a radius with the circular arc waveguide in the one 2 × 2 power splitter 3mn6, the 22 × 2 power splitter 3mn7 is R b, girth is 2 π R bannular chamber, wherein optical modulator length elects π R as b, optical modulator adopts the carrier depletion type fiber waveguide cross section structure shown in Fig. 4, adopts the mechanism of carrier depletion type to realize High Speed Modulation.Annular chamber resonance wavelength is corresponding with the laser wavelength of this passage, therefore resonance wavelength is λ n=1525.6nm+n Δ λ ch, Δ λ in formula chfor channel spacing, get Δ λ ch=1.6nm, n=1,2 ..., 16.According to resonance wavelength calculate get node unit 3m1,3m2 ..., 3mn ..., the radius of curvature R of annular chamber in 3mN bbe followed successively by 4.097 μm, 4.088 μm, 4.080 μm, 4.071 μm, 4.062 μm, 4.053 μm, 4.045 μm, 4.036 μm, 4.027 μm, 4.018 μm, 4.010 μm, 4.001 μm, 3.992 μm, 3.984 μm, 3.975 μm, 3.966 μm, m=1,, M.Designed cell node as shown in Figure 10.
In optical modulator, the waveguide of optical modulation region adopts the fiber waveguide cross section structure shown in Fig. 3 thus realizes High Speed Modulation by the mechanism of carrier injection type.The pattern multiplexer 4 that the present embodiment adopts adopts the structure based on cascade asymmetric coupler, has 4 passages.The transmitter module of final formation as shown in figure 11.
Embodiment 2
For M=8, N=16, wherein comprise 128 node units, 8 channel pattern multiplexers.
Laser array comprises 16 laser elements, and the channel spacing of each laser element emission wavelength is Δ λ ch=1.6nm.Node unit adopts unit mechanisms as shown in Figure 2, the silicon nanowires fiber waveguide based on silicon-on-insulator SOI material is selected in each connection waveguide, and 1 × 2 power splitter 3mn5 and the one 2 × 2 power splitter 3mn6, the 22 × 2 power splitter 3mn7 adopt multi-mode interference coupler structure as shown in Figure 8.In optical modulator, the waveguide of optical modulation region adopts the structure shown in Fig. 4, realizes High Speed Modulation by the mechanism of carrier depletion type.First connects waveguide 3mn8 is connected waveguide 3mn9 infall broadening duct width to reduce the wastage and crosstalk with second.
Embodiment 3
For M=2, N=8, wherein comprise 16 node units, 2 channel pattern multiplexers.
Laser array comprises 8 laser elements, and the channel spacing of each laser element emission wavelength is Δ λ ch=1.6nm.Node unit adopts unit mechanisms as shown in Figure 2, the silicon nanowires fiber waveguide based on silicon-on-insulator SOI material is selected in each connection waveguide, and 1 × 2 power splitter 3mn5 and the one 2 × 2 power splitter 3mn6, the 22 × 2 power splitter 3mn7 adopt Liriodendron chinese type coupler structure as shown in Figure 9.In optical modulator, the waveguide of optical modulation region adopts the structure shown in Fig. 5, realizes High Speed Modulation by the mechanism of carrier accumulation type.First connects waveguide 3mn8 is connected waveguide 3mn9 infall broadening duct width to reduce the wastage and crosstalk with second.
Embodiment 4
For M=4, N=64, wherein comprise 256 node units, 4 channel pattern multiplexers.
Laser array comprises 64 laser elements, and the channel spacing of each laser element emission wavelength is Δ λ ch=0.8nm.Node unit adopts unit mechanisms as shown in Figure 2, the silicon nanowires fiber waveguide based on silicon-on-insulator SOI material is selected in each connection waveguide, 1 × 2 power splitter 3mn5 adopts the directional coupler structure shown in Fig. 7, and the one 2 × 2 power splitter 3mn6, the 22 × 2 power splitter 3mn7 all adopt Liriodendron chinese type coupler structure as shown in Figure 9.In optical modulator, the waveguide of optical modulation region adopts the structure shown in Fig. 6, realizes High Speed Modulation by the mechanism regulated and controled based on Graphene.First connects waveguide 3mn8 is connected waveguide 3mn9 infall broadening duct width to reduce the wastage and crosstalk with second.
Above-described embodiment is used for explaining and the present invention is described, instead of limits the invention, and in the protection range of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention.

Claims (10)

1., for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: comprise there is N number of laser element of linearly arranging laser array (1), the node unit array (3) ading up to N × M in N × M array arrangement, the M channel pattern multiplexer (4) with M input and output multimode waveguide (5);
Each node unit in node unit array all has four ports, four ports be respectively the first port for receiving unmodulated light, for receive one or more multiplexing modulated light signal the second port, for exporting the 3rd port of unmodulated light and the 4th port for exporting one or more multiplexing modulated light signal; N × M array arrangement is connected to form by port corresponding separately, altogether the capable N row of M between adjacent node unit; The first port being positioned at a line node unit of node unit array edges is connected separately with the output of N number of laser element of laser array (1) respectively, and this row node unit the first port be not connected with other node units; The 4th port being positioned at a row node unit of node unit array edges is connected separately with M input of M channel pattern multiplexer (4) respectively, and this row node unit the 4th port be not connected with other node units; The output of M channel pattern multiplexer (4) is connected with output multimode waveguide (5).
2. one according to claim 1 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: four ports of described node unit lay respectively at the direction, four sides of upper and lower, left and right, four ports of node unit are respectively lower port, left port, upper port, right output port; Port by facing separately between adjacent node unit is connected to form N × M array arrangement; The lower port being positioned at N number of node unit of bottom row or top line is connected separately with the output of N number of laser element of laser array (1) respectively, the right output port being positioned at N number of node unit of right column or left column is connected separately with M input of M channel pattern multiplexer (4) respectively, and the output of M channel pattern multiplexer (4) is connected with output multimode waveguide (5).
3. be used for mode multiplexing-wavelength division multiplexing transmitter module according to the arbitrary described one of claim 1 or 2, it is characterized in that: described each node unit all comprises 1 × 2 power splitter, the one 2 × 2 power splitter, the 22 × 2 power splitter, first connect waveguide, second and connect waveguide, the 3rd and connect waveguide, the 4th and connect waveguide, the 5th and connect waveguide, the 6th and connect that waveguide, the 7th connects waveguide, optical modulator is connected waveguide with the 8th;
The input of 1 × 2 power splitter is connected with the 8th one end being connected waveguide, and the 8th connects the other end of waveguide as lower port; An output of 1 × 2 power splitter is connected waveguide and is connected with first, another output of 1 × 2 power splitter connects waveguide through the 4th and is connected with one end of optical modulator, the other end of optical modulator connects waveguide by the 7th and is connected with an input of the one 2 × 2 power splitter, another input of one 2 × 2 power splitter connects waveguide by the 6th and is connected with an output of the 22 × 2 power splitter, and another output of the 22 × 2 power splitter is connected waveguide and is connected with the 3rd; Input of the 22 × 2 power splitter is connected waveguide with second and connects, and another input of the 22 × 2 power splitter connects waveguide by the 5th and is connected with an output of the one 2 × 2 power splitter; First connects waveguide and second is connected waveguide and intersects, and the other end of the first connection waveguide, the second connection waveguide extends and separately respectively as upper port, left port; 3rd other end connecting waveguide extends as lower port.
4. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: 1 × 2 described power splitter has non-uniform power allocation proportion, be arranged in node unit array and have same power sharing ratio with 1 × 2 power splitter of all node units of a line, 1 × 2 power splitter being arranged in each node unit of same column has different power sharing ratio separately; For each node unit of same column in node unit array, the power output of another output of each 1 × 2 power splitter is the 1/(M+1-m of the incident gross power of 1 × 2 power splitter input), m is the ordinal number of same row interior joint unit, M is the sum of a row interior joint unit, m=1 ..., M.
5. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: the one 2 × 2 power splitter in described node unit, the 5th connects waveguide, the 22 × 2 power splitter is connected waveguide connected looping chamber successively with the 6th, and the annular chamber that the node unit being arranged in same column is formed has identical resonance wavelength; The annular chamber that the node unit being arranged in colleague is formed has different resonance wavelength separately, and each resonance wavelength constitutes the wavelength sequence that uniform intervals increases progressively or successively decreases.
6. one according to claim 1 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: described output multimode waveguide (5) supports at least M pattern.
7. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: described optical modulator utilizes the signal of telecommunication to modulate its optical field amplitude or position phase.
8. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: described optical modulator is have the structure of carrier concentration controllable PN junction area waveguide or have the structure of graphene coated waveguide; The regulatable PN junction area waveguide of carrier concentration is carrier injection type, carrier depletion type or carrier electric charge accumulation type.
9. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: 1 × 2 described power splitter, the one 2 × 2 power splitter or the 22 × 2 power splitter are directional coupler, multi-mode interference coupler or Liriodendron chinese type coupler.
10. one according to claim 3 is used for mode multiplexing-wavelength division multiplexing transmitter module, it is characterized in that: described first connects waveguide is connected waveguide infall and contains and reduce the wastage and the waveguide chi structure of crosstalk with second.
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