CN104393926B - Transmitter module for mode multiplexing-wavelength division multiplexing - Google Patents

Transmitter module for mode multiplexing-wavelength division multiplexing Download PDF

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CN104393926B
CN104393926B CN201410632695.5A CN201410632695A CN104393926B CN 104393926 B CN104393926 B CN 104393926B CN 201410632695 A CN201410632695 A CN 201410632695A CN 104393926 B CN104393926 B CN 104393926B
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waveguide
power splitter
port
node unit
wavelength
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CN104393926A (en
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戴道锌
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Zhejiang University ZJU
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Zhejiang University ZJU
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Abstract

The invention discloses a transmitter module for mode multiplexing-wavelength division multiplexing. Each node cell of a node cell array is provided with four ports, which are a first port, a second port, a third port and a fourth port that are used for receiving unmodulated light, adjacent node cells are connected by corresponding ports so as to form an N*M array, the first ports of the row of node cells at the edge of the node cell array are respectively connected with output ends of N laser cells of a laser array, the fourth ports of the row of node cells at the edge of the node cell array are respectively connected with M input ends of an M channel mode multiplexer, and the output end of the M channel mode multiplexer is connected with output multimode waveguide. The transmitter module has the advantages of being concise and compact in structure and convenient in design, having little waveguide cross, and being beneficial to lowering insertion loss and channel crosstalk, and realizes two-dimension multiplexing of mode and wavelength.

Description

A kind of transmitter module for mode multiplexing-wavelength-division multiplex
Technical field
The present invention relates to a kind of planar optical waveguide integrated device, mode multiplexing-wavelength-division multiplex to be used for more particularly, to one kind Transmitter module.
Background technology
It is well known that long-distance optical communication has been achieved with immense success.Similarly, light network is used as a kind of new interconnection side Formula, the bottleneck problem that traditional electricity interconnection can be overcome to exist, attracts wide attention.Proposed from J.W.Goodman in 1984 Using since light network scheme in VLSI, light network research has achieved huge progress.Current light network is constantly to very-short-reach Interconnection propulsion, its traffic capacity demands are growing.For optical interconnection system volume of transmitted data it is big the characteristics of, most straightforward approach It is to borrow wavelength-division multiplex (WDM) technology commonly used in long-distance optical fiber communication system.However, due to laser array cost and being The limitation of the factors such as system complexity, the available channel a few days of dense wavelength division multiplexing system hastens towards saturation.Therefore, need badly and develop new answering With technology, so as to further increase signal channel.Mode multiplexing technology is the multiplexing skill being taken seriously again recent years Art, its general principle is to carry signal respectively using the multiple orthogonal modes in multimode fibre or multimode waveguide to carry out multichannel number According to transmission, its core devices is pattern (solution) multiplexer.Some emerging mode multiplexing-demultiplexings have been have developed in the past few years Device.For example, document【Maxim Greenberg etc., " Simultaneous dual mode add/drop Multiplexers for optical interconnects buses, " Optics Communications 266 (2006) 527–531】A kind of bimodulus of the single polarization based on power gradual change (adiabatic power transfer) principle is devised to insert Division multiplexer, but its design is complicated, is not easy to expand;Document【S.Bagheri,and William M.J.Green “Silicon-on-insulator mode-selective add-drop unit for on-chip mode-division multiplexing,”6th IEEE International Conference on Group IV Photonics,2009 (GFP'09),Page(s):166-168,9-11Sept.2009】Give a kind of bimodulus based on multilevel mode coupling and insert and divide multiple With device, but the multiplexing of basic mode and the first high-order mode is only realized, its complex structure, design inconvenience, device size is big and is not easy to Extension;Document【Daoxin Dai,Jian Wang,and Yaocheng Shi,"Silicon mode(de)multiplexer enabling high capacity photonic networks-on-chip with a single-wavelength- carrier light,"Opt.Lett.38,1422-1424(2013)】Provide a kind of based on cascade asymmetric coupler structure Multi-channel mode multiplexing device;Document【J.Wang,S.He,and D.Dai.On-chip silicon 8-channel hybrid(de)multiplexer enabling simultaneous mode-and polarization-division- multiplexing.Laser&Photonics Reviews.8(2):L18–L22,2014】Provide a kind of dual-polarization of 8 passage Mode multiplexing device.
It is worth noting that, these researchs also simply pay close attention to mode multiplexing-demultiplexing device in itself.It is more logical in order to obtain With wavelength-division multiplex should be combined mode multiplexing so as to really lift message capacity by road, and its Primary Component is then new mixing Close multiplexing-demultiplexer.It is directly by mode multiplexing device and multiple wavelength division multiplex devices (such as array ripple than relatively straightforward mode Guide grating) it is combined, but during composition transmitter module that this hybrid multiplex device and laser array, light modulator arrays are integrated, There is a problem of that the crossing many, device size of waveguide is excessive.
The content of the invention
It is a kind of for mode multiplexing-wavelength-division present invention aim at providing in order to solve problem present in background technology Multiplexing transmitter module.
The technical solution adopted by the present invention is:
The present invention include with N number of linear arrangement laser element laser array, in N M array arrange Node unit array of the sum for N × M, the M channel patterns multiplexer with M input and export multimode waveguide;Section Each node unit in dot element array is respectively provided with four ports, four ports be respectively for receive unmodulated light first Port, second port, the 3rd port for exporting unmodulated light for receiving one or more modulated optical signal being multiplexed With the 4th port of the modulated optical signal for exporting one or more multiplexing;By each relative between adjacent node unit The port answered connects to form N M array arrangement, common M rows N row;Positioned at the of a line node unit of node unit array edges Output end of the Single port respectively with N number of laser element of laser array is each connected, and the row node unit first Port is not connected with other node units;Positioned at node unit array edges a row node unit the 4th port respectively with M M input of channel pattern multiplexer is each connected, and the row node unit the 4th port not with other node units It is connected;The output end of M channel pattern multiplexers is connected with output multimode waveguide.
Four ports of described node unit are respectively positioned at the four sides direction of upper and lower, left and right, four of node unit Port is respectively lower port, left port, upper port, right output port;Port between adjacent node unit by each facing Connection forms N M array arrangement;Positioned at bottom row or top row N number of node unit lower port respectively with the N of laser array The output end of individual laser element is each connected, positioned at right column or N number of node unit of left column right output port respectively with M M input of channel pattern multiplexer is each connected, and the output end of M channel pattern multiplexers is connected with output multimode waveguide.
Each described node unit comprising 1 × 2 power splitter, the one 2 × 2nd power splitter, the 22 × 2nd power splitter, First connection waveguide, the second connection waveguide, the 3rd connection waveguide, the 4th connection waveguide, the 5th connection waveguide, the 6th connection ripple Lead, the 7th connects waveguide, optical modulator and the 8th connection waveguide;One end that the input of 1 × 2 power splitter is connected waveguide with the 8th It is connected, the other end of the 8th connection waveguide is used as lower port;One output end of 1 × 2 power splitter is connected waveguide with first and is connected, Another output end of 1 × 2 power splitter is connected through the 4th connection waveguide with one end of optical modulator, and the other end of optical modulator passes through 7th connection waveguide is connected with an input of the one 2 × 2nd power splitter, and another input of the one 2 × 2nd power splitter passes through 6th connection waveguide is connected with an output end of the 22 × 2nd power splitter, another output end of the 22 × 2nd power splitter and the Three connection waveguides are connected;One input of the 22 × 2nd power splitter is connected waveguide connection with second, the 22 × 2nd power splitter Another input is connected by the 5th connection waveguide with an output end of the one 2 × 2nd power splitter;First connection waveguide and the Two connection waveguides intersect, and the first connection waveguide, the other end of the second connection waveguide each extend and respectively as upper port, left end Mouthful;The other end of the 3rd connection waveguide extends as lower port.
1 × 2 described power splitter has non-uniform power allocation proportion, with all of a line in node unit array 1 × 2 power splitter of node unit has same power sharing ratio, 1 × 2 work(in each node unit of same column point Device each has different power sharing ratios;For each node unit of same column in node unit array, each 1 × 2 work( The power output for dividing another output end of device is 1/ (M+1-m) of the incident general power of 1 × 2 power splitter input, and m is same The ordinal number of row interior joint unit, M is the sum of a row interior joint unit, m=1 ..., M.
The one 2 × 2nd power splitter, the 5th connection waveguide in described node unit, the 22 × 2nd power splitter and the 6th connect Connect waveguide and be sequentially connected composition annular chamber, the annular chamber constituted in the node unit of same column has identical resonance wavelength; The annular chamber constituted in the node unit of colleague each has different resonance wavelength, and each resonance wavelength is constituted uniformly Increments or the wavelength sequence successively decreased.
Described output multimode waveguide supports at least M pattern.
Described optical modulator is that its optical field amplitude or position phase are modulated using electric signal.
The optical modulator is structure with carrier concentration controllable PN junction area waveguide or with Graphene bag Cover the structure of waveguide;The regulatable PN junction area waveguide of carrier concentration is carrier injection type, carrier depletion type or current-carrying Charge of the electron accumulation type.
Described 1 × 2 power splitter, the one 2 × 2nd power splitter or the 22 × 2nd power splitter are that directional coupler, multimode are done Relate to coupler or Liriodendron chinese type coupler.
The first described connection waveguide is connected the waveguide cross knot that waveguide infall contains reduce loss and crosstalk with second Structure.
The invention has the advantages that:
The present invention has compact, design simple for structure conveniently and waveguide intersection is few, advantageously reduces insertion loss, Yi Jitong The advantage of road crosstalk, and pattern, two hybrid multiplexs of dimension of wavelength are realized, so as to super multichannel number can be obtained.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Fig. 2 is the schematic diagram of node unit structure of the present invention.
Fig. 3 is the fiber waveguide schematic cross-section of optical modulation region in carrier injection type optical modulator.
Fig. 4 is the fiber waveguide schematic cross-section of optical modulation region in carrier depletion type optical modulator.
Fig. 5 is the fiber waveguide schematic cross-section of optical modulation region in carrier accumulation type optical modulator.
Fig. 6 is the fiber waveguide schematic cross-section of optical modulation region in the optical modulator based on Graphene.
Fig. 7 is the structural representation using 1 × 2 power splitter of directional coupler:
Fig. 8 is the structural representation using 1 × 2 power splitter of multi-mode interference coupler:
Fig. 9 is the structural representation using 1 × 2 power splitter of Mach-Zehnder interferometer:
Figure 10 is the example structure schematic diagram of node unit of the present invention.
It is the final microstructural schematic diagram of the embodiment of the present invention that Figure 11 is.
In figure:1st, laser array, 3, node unit array, 4, M channel pattern multiplexers, 5, multimode waveguide, 1n, laser Device unit, 3mn, node unit, 3mn1, lower port, 3mn2, left port, 3mn3, upper port, 3mn4, right output port, 3mn5,1 × 2 Power splitter, 3mn6, the one 2 × 2nd power splitter, 3mn7, the 22 × 2nd power splitter, 3mn8, the first connection waveguide, 3mn9, second connect Connect waveguide, 3mn10, the 3rd connection waveguide, 3mn11, the 4th connection waveguide, 3mn12, the 5th connection waveguide, 3mn13, the 6th company Connect waveguide, 3mn14, the 7th connection waveguide, 3mn15, optical modulator, 3mn16, the 8th connection waveguide, 11,12,13 ..., 1N tables Show each laser element;21st, waveguide core region, 22, P+ type doped region, 23, N+ type doped regions, 24, p-type doped region, 25, N-type Doped region, 26, SiO2 barrier layers, 27, separation layer, 28, Graphene, 29, metal electrode;61st, input, 62, output end, 63, Coupled zone, 64, multiple-mode interfence area, 65,1 × 2 coupler, 66,2 × 2 couplers, the 67, first Liriodendron chinese arm, 68, Two Liriodendron chinese arms.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
As shown in figure 1, the present invention include with N number of linear arrangement laser element 11,12,13 ..., the laser of 1N Device array 1, the sum arranged in N M array for N × M node unit array 311,312 ..., 31N, 321,322 ..., 32N ..., 3M1,3M2 ..., 3MN, M channel patterns multiplexer 4 and output multimode waveguide 5 with M input;M is section The line number of dot element array, N is the columns of node unit array.
Each node unit 311 in node unit array, 312 ..., 31N, 321,322 ..., 32N ..., 3M1, 3M2 ..., 3MN be respectively provided with four ports, by taking the node unit 3mn in Fig. 1 as an example, four ports are respectively and does not adjust for receiving The first port 3mn1 of light processed, for receive one or more multiplexing modulated optical signal second port 3mn2, for exporting 3rd port 3mn3 of unmodulated light and the 4th port 3mn4 for exporting the modulated optical signal of one or more multiplexing, m are The ordinal number of same column lower node unit, n is the ordinal number of colleague's lower node unit, m=1 ..., M, n=1 ..., N;Adjacent node list Connect to form N M array arrangement by each corresponding port between unit, common M rows N row;Positioned at node unit array edges The output end of the first port respectively with N number of laser element of laser array 1 of a line node unit be each connected, and should The first port of row node unit is not connected with other node units;Positioned at a row node unit of node unit array edges M input of the 4th port respectively with M channel patterns multiplexer 4 be each connected, and the row node unit the 4th end Mouth is not connected with other node units;The output end of M channel patterns multiplexer 4 is connected with output multimode waveguide 5.
As shown in Fig. 2 four ports of preferred node unit are respectively positioned at the four sides direction of upper and lower, left and right, node Four ports of unit 3mn, first port, second port, the 3rd port and the 4th port are respectively lower port 3mn1, left port 3mn2, upper port 3mn3 and right output port 3mn4, m=1 ..., M, n=1 ..., N;By respective phase between adjacent node unit Just to port connect to be formed N M array arrangement;Positioned at bottom row or top row N number of node unit lower port respectively with swash The output end of N number of laser element of light device array 1 is each connected, positioned at N number of node unit of right column or left column M input of the right output port respectively with M channel patterns multiplexer 4 is each connected, the output end of M channel patterns multiplexer 4 with it is defeated Go out multimode waveguide 5 to be connected.
By taking m rows the n-th row node unit 3mn as an example, the node list lower port 3mn1 of node unit 3mn adjacent with lower section Upper port 3 (m-1) n3 of 3 (m-1) n of unit is connected;(the m+ of the node unit 3 upper port 3mn3 of node unit 3mn adjacent with top 1) lower port 3 (m+1) n1 of n is connected;Node unit 3m's (n-1) the left port 3mn2 of node unit 3mn adjacent with left Right output port 3m (n-1) 4 is connected;The left port of node unit 3m (n+1) the right output port 3mn4 of node unit 3mn adjacent with right 3m (n+1) 2 is connected;1<m<M-1,1<n<N-1.
As shown in Fig. 2 by taking m rows the n-th row node unit 3mn as an example, each node unit 3mn includes 1 × 2 work( Divide device 3mn5, the one 2 × 2nd power splitter 3mn6, the 22 × 2nd power splitter 3mn7, the first connection waveguide 3mn8, the second connection waveguide 3mn9, the 3rd connection waveguide 3mn10, the 4th connection waveguide 3mn11, the 5th connection waveguide 3mn12, the 6th connection waveguide 3mn13, 7th connection waveguide 3mn14, the connection waveguides of optical modulator 3mn15 and the 8th 3mn16;The input of 1 × 2 power splitter 3mn5 and One end of eight connection waveguide 3mn16 is connected, and the other end of the 8th connection waveguide 3mn16 is used as lower port 3mn1;1 × 2 power splitter One output end of 3mn5 is connected waveguide 3mn8 with first and is connected, and 1 × 2 another output end of power splitter 3mn5 is through the 4th connection ripple 3mn11 is led to be connected with one end of optical modulator 3mn15, the other end of optical modulator 3mn15 by the 7th connection waveguide 3mn14 with One input of the one 2 × 2nd power splitter 3mn6 is connected, and another input of the one 2 × 2nd power splitter 3mn6 connects by the 6th Meet waveguide 3mn13 to be connected with an output end of the 22 × 2nd power splitter 3mn7, another of the 22 × 2nd power splitter 3mn7 is defeated Going out end, that waveguide 3mn10 is connected with the 3rd is connected;One input of the 22 × 2nd power splitter 3mn7 is connected waveguide 3mn9 with second Connection, another input of the 22 × 2nd power splitter 3mn7 is by the 5th connection waveguide 3mn12 and the one 2 × 2nd power splitter One output end of 3mn6 is connected;First connection waveguide 3mn8 is connected waveguide 3mn9 and intersects with second, the first connection waveguide 3mn8, The other end of the second connection waveguide 3mn9 each extends and respectively as upper port 3mn3, left port 3mn2;3rd connection waveguide The other end of 3mn10 extends as right output port 3mn4.
By taking m rows the n-th row node unit 3mn as an example, 1 × 2 power splitter 3mn5 has non-uniform power allocation proportion, is located at 1 × 2 power splitter 3mn5 of all node units in node unit array with a line has same power sharing ratio, is located at 1 × 2 power splitter 3mn5 in each node unit of same column each has different power sharing ratios;For node unit battle array Each node unit of same column in row, the power output of another output end of each 1 × 2 power splitter 3mn5 is 1 × 2 power splitter 1/ (M+1-m) of the incident general power of 3mn5 inputs, m are the ordinal number of same column lower node unit, and m is same row interior joint unit Ordinal number, M is the sum of a row interior joint unit, m=1 ..., M.
By taking m rows the n-th row node unit 3mn as an example, the one 2 × 2nd power splitter 3mn6, the 5th connection ripple in node unit Lead 3mn12, the 22 × 2nd power splitter 3mn7 and the 6th connection waveguide 3mn13 is sequentially connected composition annular chamber, positioned at the section of same column The annular chamber constituted in dot element has identical resonance wavelength;The annular chamber constituted in the node unit of colleague each has There are different resonance wavelengths, each resonance wavelength constitutes the wavelength sequence that uniform intervals are incremented by or successively decrease.For example between uniform Every being incremented by or the wavelength sequence successively decreased is λab, the resonance wavelength for constituting annular chamber positioned at the node unit of colleague is λn, n =1 ..., N, the resonance wavelength of each annular chamber can be with wavelength sequence λabIn each wavelength arbitrarily correspond to, order is any.
Output multimode waveguide 5 supports at least M pattern, and the respectively M such as basic mode, the first high-order mode, second high-order mode is led Mould, these patterns are orthogonal, with different propagation constants.
Optical modulator 3mn15 is the device that optical field amplitude or position phase are modulated using electric signal, can be using with electroluminescent absorption The straight wave guide structure of the optical modulation region of effect, also can be by regulating and controlling the position phase of its optical modulation region and using Mach-Zehnder interferometer Structure or micro-ring resonant cavity configuration realize light modulation.Wei the current-carrying of the preferred scheme of optical modulation region in optical modulator The sub- regulatable PN junction area waveguide of concentration is covered with the waveguide of Graphene, and as shown in Fig. 3~Fig. 5, carrier concentration can The PN junction area waveguide of regulation and control can be carrier injection type, carrier depletion type or carrier electric charge accumulation type.
The lightguide cross section of optical modulation region is as shown in figure 3, P+ type doped region 22 and N in carrier injection type optical modulator The two poles of the earth of+type doped region 23 are respectively positioned at the both sides of waveguide core region 21.
The lightguide cross section of optical modulation region is as shown in figure 4, waveguide core region is mixed by p-type in carrier depletion type optical modulator Miscellaneous area 24 and n-type doping area 25 constitute, P+Type doped region 22 and N+The two poles of the earth of type doped region 23 are respectively positioned at a left side for p-type doped region 24 Side, the right side in n-type doping area 25.
The lightguide cross section of optical modulation region is as shown in figure 5, waveguide core region is by P in carrier electric charge accumulation type optical modulator Type doped region 24, n-type doping area 25 and positioned at SiO between the two2Barrier layer constitutes, P+Type doped region 22 and N+Type adulterates The two poles of the earth of area 23 are respectively positioned at left side, the right side in n-type doping area 25 of p-type doped region 24.
The lightguide cross section of optical modulation region in the optical modulator of Graphene is coated with as shown in fig. 6, comprising waveguide core region 21, its surface is coated with and Graphene 28 is partially covered with separation layer 27, separation layer 27, and respectively there is gold the both sides of waveguide core region 21 Category electrode 29, is in contact with waveguide core region 21, Graphene 28 respectively.
Preferred 1 × 2 power splitter, the one 2 × 2nd power splitter or the 22 × 2nd power splitter can be directional coupler, many Mode interference coupler or Liriodendron chinese type coupler.
For as a example by the one 2 × 2nd power splitter or the 22 × 2nd power splitter, structure such as Fig. 7 institutes of directional coupler Show, two connection waveguides are located at coupled zone, therefrom draw respectively as four ports, two output ends 62, two inputs 61. The coupled modes of 1 × 2 power splitter are identical, that is, choose one of two inputs 61 as its input.
The structure of multi-mode interference coupler therefrom draws four ends as shown in figure 8, coupled zone is one section of multimode waveguide respectively Mouthful, two output ends 62, two inputs 61.The coupled modes of 1 × 2 power splitter are identical, that is, choose one of two inputs 61 As its input.
Liriodendron chinese type coupler is as shown in figure 9, comprising two inputs 61,65, two, input coupling area length Different interfere arms, i.e. the first Liriodendron chinese arm 67 and the second Liriodendron chinese arm 68, input coupling area 66 and Two output ends 62, changing two interfere arm length differences can obtain different splitting ratios.The coupled modes phase of 1 × 2 power splitter Together, that is, one of two inputs 61 are chosen as its input.
First connection waveguide 3mn8 is connected the waveguide that waveguide 3mn9 infalls contain reduce loss and crosstalk with second and intersects Structure, as shown in Figure 10, i.e. the mode transition structure of duct width broadening, to reduce the loss and crosstalk of waveguide transmission.
Working process and principle of the invention are as follows:
First, the function of being realized by taking node unit 3mn as an example is:
It is divided into two parts from the continuous light of lower port 3mn1 inputs.A portion power proportion be (M-m)/ (M-m+1), the part light is non-modulated from upper port output;Another part luminous power proportion is 1/ (M-m+1), through toning System exported from right output port after signal with being loaded.
Modulated process has wavelength selectivity in node unit 3mn, is λ only to wavelengthnWavelength can produce modulation;From a left side The wavelength of port 3mn2 input lights deviates the wavelength Xn, thus into will not be kept by secondary modulation after node unit 3mn Original state ground is exported from right output port.
2nd, overall work process:
Each laser element 11 in laser array 1,12,13 ..., 1N each send centre wavelength for λ1、λ2、λ3、 λ4、…、λn、…、λNLight.
Illustrated so that M=4 is four patterns as an example, and consider first via wavelength X1, the wavelength that laser sends is λ1's Light enters the lower port 3111 of node unit 311, then with 25%:75% power ratio is divided into two-way, respectively from right output port 3114th, the two parts of upper port 3113 output:
It is modulation light from the light of the output of right output port 3114, its power proportion is to be input to the general power of node unit 311 25%.The modulation light from left port to enter, right output port from left to right sequentially passes through node unit 312 in the way of going out, 313 ..., 31N, in the process will not be by secondary modulation.Enter finally into the input of first passage in pattern multiplexer 4, and from output Multimode waveguide 5 is exported.
Light from the output of upper port 3113 is non-modulation light, and its power proportion is to be input to the total work of node unit 311 The 75% of rate.This part light enters into the lower port of node unit 321 from after the output of upper port 3113, and with 33.3%: 66.7% power ratio is divided into two-way, right output port 3214 respectively from node unit 321, the output of the two parts of upper port 3213, from The light of the output of right output port 3214 is modulation light, and its power proportion is be input to the general power of node unit 321 33.3%.Should Modulation light to enter from left port, right output port from left to right sequentially passed through in the way of going out node unit 322,323 ..., 32N, herein During will not be by secondary modulation.Enter finally into the input of second channel in pattern multiplexer 4, and from output multimode waveguide 5 outputs.
Light from the output of upper port 3213 is non-modulation light, and its power proportion is to be input to the total work of node unit 321 The 66.7% of rate.This part light enters into the lower port of node unit 331 from after the output of upper port 3213, and with 50%:50% Power ratio be divided into two-way, right output port 3314 respectively from node unit 331, the output of the two parts of upper port 3313, from right output port The light of 3314 outputs is modulation light, and its power proportion is be input to the general power of node unit 331 50%.The modulation light with Enter from left port, the mode that right output port goes out from left to right sequentially passes through node unit 332,333 ..., 33N, in the process not Can be by secondary modulation.The input of third channel in pattern multiplexer 4 is entered finally into, and is exported from output multimode waveguide 5.
Light from the output of upper port 3313 is non-modulation light, and its power proportion is to be input to the total work of node unit 331 The 50% of rate.This part light enters into the lower port of node unit 341 from after the output of upper port 3313, and with 100%:0% Power ratio is divided into two-way, right output port 3414 respectively from node unit 341, the output of the two parts of upper port 3413, from right output port The light of 3414 outputs is modulation light, and its power proportion is be input to the general power of node unit 341 100%.The modulation light To enter from left port, right output port from left to right sequentially passed through in the way of going out node unit 342,343 ..., 34N, in the process Will not be by secondary modulation.The input of fourth lane in pattern multiplexer 4 is entered finally into, and is exported from output multimode waveguide 5.
Other lasers send light by similar process, and final situation is:Four input channels of pattern multiplexer 4 In either of which contain respectively by wavelength be λ1、λ2、λ3、λ4、…、λn、…、λNLight entrained by 16 passages modulation Signal, and pattern multiplexer 4 most all passages of four inputs are all coupled to same waveguide and export multimode ripple at last Lead 5.
3rd, the optical transmission process in node unit 3mn:
Illustrated so that M=4 is four patterns as an example, and consider node unit 3mn.
As shown in Fig. 2 wavelength is λnContinuous light enter node unit 3mn lower port 3mn1, by 1 × 2 power splitter It is divided into work(point after 3mn5 than being 1:4 two-beam, wherein 75% light via connection waveguide 3mn8 from upper port 3mn3 output, 25% light enters into optical modulator 3mn15 via connection waveguide 3mn11, and the light modulated is via the 7th connection waveguide 3mn14 Enter into by the one 2 × 2nd power splitter 3mn6, the 5th connection waveguide 3mn12, the 22 × 2nd power splitter 3mn7, the 6th connection waveguide 3mn13 is sequentially connected constituted annular chamber.By being related to the chamber initial resonant wavelength for causing the annular chamber long and input light wave λ long1It is consistent.The light that the annular chamber will be modulated is connected waveguide 3mn10 with the 3rd from the 22 × 2nd power splitter 3mn7 and is connected Port output light intensity modulated and from right output port 3mn4 output.The wavelength X of the modulation light1With node unit afterwards 3m2,3m3 ..., the resonance wavelength of annular chamber is all different in 3mN, thus the side that modulation light enters with from left port, right output port goes out Formula from left to right sequentially pass through node unit 3m2,3m3 ..., 3mN, and enter into the input of first passage in pattern multiplexer 4 End, finally exports from output multimode waveguide 5.
Specific embodiment of the invention is as follows:
Embodiment 1
By taking M=4, N=16 as an example, wherein comprising 64 node units, a 4 channel pattern multiplexers.
Laser array includes 16 laser elements, and the channel spacing of each laser element launch wavelength is Δ λch= The wavelength of 1.6nm, wherein laser element 1n transmitting is λn=1525.6nm+n Δs λch, n=1 ..., N.
Here, each connection waveguide is from the silicon nanowires fiber waveguide based on silicon-on-insulator SOI materials:Its sandwich layer is silicon material Material, thickness is 220nm, refractive index is 3.4744;Its under-clad layer material is SiO2, thickness is 2 μm, refractive index is 1.4404;Its Covering is air, and refractive index is 1.0.
The situation of M=4, N=16 is considered, 1 × 2 power splitter in node unit 3mn uses directional coupler structure, by the One 2 × 2 power splitter 3mn6, the 5th connection waveguide 3mn12, the 22 × 2nd power splitter 3mn7, the 6th connect waveguide 3mn13 phases successively Connect constituted annular chamber, as shown in Fig. 2 obtaining required splitting ratio by choosing different coupled zone straight wave guide length.Take Duct width is wSGap between=500nm, two Luciola substriatas is wG1=200nm.Choose S curved waveguides lateral shift therein It is XSB=4 μm, length be LSB=15 μm, and coupled zone is straight in choosing 1 × 2 power splitter of node unit 31n, 32n, 33n, 34n Waveguide length LcRespectively 0,0.45,1.25,4.5 μm so that its work(is followed successively by 25% respectively:75%th, 33.3%:66.7%th, 50%:50%th, 100%:0%.
The one 2 × 2nd power splitter 3mn6 in node unit 3mn, the 22 × 2nd power splitter 3mn7 be also adopted by by straight wave guide with Bending radius is RBCircular arc waveguide constitute directional coupler structure, cut-off duct width wS=500nm, curved waveguide width wringMinimum gap between=800nm, two Luciola substriatas is wG2=250nm.
5th connection waveguide 3mn12, the 6th connection waveguide 3mn13, the 7th connection waveguide 3mn14, optical modulator 3mn15 are equal It is that bending radius is RBCircular arc waveguide, with the circular arc waveguide in the one 2 × 2nd power splitter 3mn6, the 22 × 2nd power splitter 3mn7 It is R to constitute a radiusB, the π R of Zhou Changwei 2BAnnular chamber, wherein optical modulator length elects π R asB, optical modulator is using Fig. 4 institutes The carrier depletion type fiber waveguide cross section structure for showing, High Speed Modulation is realized using the mechanism of carrier depletion type.Annular chamber resonance Wavelength is corresponding with the laser wavelength of the passage, therefore resonance wavelength is λn=1525.6nm+n Δs λch, Δ λ in formulachIt is interchannel Every taking Δ λch=1.6nm, n=1,2 ..., 16.According to resonance wavelength calculate take node unit 3m1,3m2 ..., 3mn ..., 3mN The radius of curvature R of middle annular chamberBBe followed successively by 4.097 μm, 4.088 μm, 4.080 μm, 4.071 μm, 4.062 μm, 4.053 μm, 4.045μm、4.036μm、4.027μm、4.018μm、4.010μm、4.001μm、3.992μm、3.984μm、3.975μm、3.966 μm, m=1 ..., M.Designed cell node is as shown in Figure 10.
The waveguide of optical modulation region uses the fiber waveguide cross section structure shown in Fig. 3 so as to be injected by carrier in optical modulator The mechanism of type realizes High Speed Modulation.The pattern multiplexer 4 that the present embodiment is used uses the structure based on cascade asymmetric coupler, Have 4 passages.The transmitter module for ultimately forming is as shown in figure 11.
Embodiment 2
By taking M=8, N=16 as an example, wherein comprising 128 node units, a 8 channel pattern multiplexers.
Laser array includes 16 laser elements, and the channel spacing of each laser element launch wavelength is Δ λch= 1.6nm.Node unit uses unit mechanisms as shown in Figure 2, and each connection waveguide is from the silicon based on silicon-on-insulator SOI materials Nano-wire optical waveguide, 1 × 2 power splitter 3mn5 and the one 2 × 2nd power splitter 3mn6, the 22 × 2nd power splitter 3mn7 are used such as Fig. 8 institutes The multi-mode interference coupler structure shown.The waveguide of optical modulation region is consumed using the structure shown in Fig. 4 by carrier in optical modulator The mechanism of type to the greatest extent realizes High Speed Modulation.First connection waveguide 3mn8 be connected with second waveguide 3mn9 infall broadening duct widths with Reduce loss and crosstalk.
Embodiment 3
By taking M=2, N=8 as an example, wherein comprising 16 node units, a 2 channel pattern multiplexers.
Laser array includes 8 laser elements, and the channel spacing of each laser element launch wavelength is Δ λch= 1.6nm.Node unit uses unit mechanisms as shown in Figure 2, and each connection waveguide is from the silicon based on silicon-on-insulator SOI materials Nano-wire optical waveguide, 1 × 2 power splitter 3mn5 and the one 2 × 2nd power splitter 3mn6, the 22 × 2nd power splitter 3mn7 are used such as Fig. 9 institutes The Liriodendron chinese type coupler structure for showing.The waveguide of optical modulation region is passed through using the structure shown in Fig. 5 in optical modulator The mechanism of carrier accumulation type realizes High Speed Modulation.First connection waveguide 3mn8 is connected waveguide 3mn9 infall broadening ripples with second Width is led with reduce loss and crosstalk.
Embodiment 4
By taking M=4, N=64 as an example, wherein comprising 256 node units, a 4 channel pattern multiplexers.
Laser array includes 64 laser elements, and the channel spacing of each laser element launch wavelength is Δ λch= 0.8nm.Node unit uses unit mechanisms as shown in Figure 2, and each connection waveguide is from the silicon based on silicon-on-insulator SOI materials Nano-wire optical waveguide, 1 × 2 power splitter 3mn5 using the directional coupler structure shown in Fig. 7, the one 2 × 2nd power splitter 3mn6, the 22 × 2 power splitter 3mn7 use Liriodendron chinese type coupler structure as shown in Figure 9.Optical modulation region in optical modulator Waveguide using the structure shown in Fig. 6, High Speed Modulation is realized by the mechanism regulated and controled based on Graphene.First connection waveguide 3mn8 Waveguide 3mn9 infall broadening duct widths are connected with second with reduce loss and crosstalk.
Above-described embodiment is used for illustrating the present invention, rather than limiting the invention, in spirit of the invention and In scope of the claims, any modifications and changes made to the present invention both fall within protection scope of the present invention.

Claims (8)

1. a kind of transmitter module for mode multiplexing-wavelength-division multiplex, it is characterised in that:Including with N number of linear arrangement The laser array of laser element(1), the node list that is made up of for N × M node unit the sum arranged in N M array Element array(3), with the M M channel pattern multiplexer of input(4)And output multimode waveguide(5);
Each node unit in node unit array is respectively provided with four ports, and four ports are respectively for receiving unmodulated light First port, the second port of modulated optical signal for receiving one or more multiplexing, for export unmodulated light the Three ports and the 4th port for exporting the modulated optical signal of one or more multiplexing;
Four ports of described node unit are respectively positioned at the four sides direction of upper and lower, left and right, four ports of node unit Respectively lower port, left port, upper port, right output port;Port between adjacent node unit by each facing connects Form N M array arrangement, common M rows N row;Positioned at bottom row N number of node unit lower port respectively with laser array(1)N The output end of individual laser element is each connected, and the lower port of N number of node unit of bottom row is not connected with other node units; Positioned at right column M node unit right output port respectively with M channel pattern multiplexers(4)M input be each connected, and The right output port of M node unit of right column is not connected with other node units, M channel pattern multiplexers(4)Output end with Output multimode waveguide(5)It is connected;
Each described node unit includes 1 × 2 power splitter, the one 2 × 2nd power splitter, the 22 × 2nd power splitter, first Connection waveguide, the second connection waveguide, the 3rd connection waveguide, the 4th connection waveguide, the 5th connection waveguide, the 6th connection waveguide, the Seven connection waveguides, optical modulator and the 8th connection waveguide;
One end that the input of 1 × 2 power splitter is connected waveguide with the 8th is connected, and the other end of the 8th connection waveguide is used as lower end Mouthful;One output end of 1 × 2 power splitter is connected waveguide with first and is connected, and another output end of 1 × 2 power splitter is through the 4th connection Waveguide is connected with one end of optical modulator, and the other end of optical modulator is by the 7th connection waveguide and the one of the one 2 × 2nd power splitter Individual input is connected, and another input of the one 2 × 2nd power splitter is by the 6th connection waveguide and the one of the 22 × 2nd power splitter Individual output end is connected, and another output end of the 22 × 2nd power splitter is connected waveguide with the 3rd and is connected;22 × 2nd power splitter One input is connected waveguide connection with second, and another input of the 22 × 2nd power splitter is by the 5th connection waveguide and the One output end of one 2 × 2 power splitters is connected;First connection waveguide is connected waveguide and intersects with second, the first connection waveguide, second The other end for connecting waveguide each extends and respectively as upper port, left port;The other end of the 3rd connection waveguide extends conduct Right output port.
2. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described 1 × 2 power splitter there is non-uniform power allocation proportion, in node unit array with a line all node units 1 × 2 power splitters have same power sharing ratio, and 1 × 2 power splitter in each node unit of same column each has Different power sharing ratios;For each node unit of same column in node unit array, each 1 × 2 power splitter it is another The power output of individual output end is the 1/ of the incident general power of 1 × 2 power splitter input(M+1-m), m is same row interior joint list The ordinal number of unit, M is the sum of a row interior joint unit, m=1 ..., M.
3. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described Node unit in the one 2 × 2nd power splitter, the 5th connection waveguide, the 22 × 2nd power splitter and the 6th connection waveguide phase successively Annular chamber is even constituted, the annular chamber constituted in the node unit of same column has identical resonance wavelength;Positioned at the section of colleague In dot element constitute annular chamber each have different resonance wavelength, each resonance wavelength constitute uniform intervals be incremented by or The wavelength sequence successively decreased.
4. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described Output multimode waveguide(5)Support at least M pattern.
5. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described Optical modulator be that its optical field amplitude or position phase are modulated using electric signal.
6. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described Optical modulator is the structure with carrier concentration controllable PN junction area waveguide or the structure with graphene coated waveguide; The regulatable PN junction area waveguide of carrier concentration is carrier injection type, carrier depletion type or carrier electric charge accumulation type.
7. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described 1 × 2 power splitter, the one 2 × 2nd power splitter or the 22 × 2nd power splitter be directional coupler, multi-mode interference coupler or horse He-Ze De interference-type couplers.
8. a kind of transmitter module for mode multiplexing-wavelength-division multiplex according to claim 1, it is characterised in that:It is described First connection waveguide the waveguide chi structure that waveguide infall contains reduce loss and crosstalk is connected with second.
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