CN104914506B - InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler - Google Patents
InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler Download PDFInfo
- Publication number
- CN104914506B CN104914506B CN201510348841.6A CN201510348841A CN104914506B CN 104914506 B CN104914506 B CN 104914506B CN 201510348841 A CN201510348841 A CN 201510348841A CN 104914506 B CN104914506 B CN 104914506B
- Authority
- CN
- China
- Prior art keywords
- port
- mode
- coupler
- interference coupler
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
- G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
- G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
Abstract
The present invention relates to a kind of InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler, the structure mainly includes three parts：Patten transformation isolating construction, pi/2 phase shift structure based on multi-mode interference coupler and the three-dB coupler structure based on multi-mode interference coupler.In described pi/2 phase shift structure, by tuning waveguide core layer thickness, the phase shift of transmission mode in the waveguide is set to change, when the length of waveguide is a certain particular value, its phase shift variations reaches pi/2.The mode multiplexing/demultiplexer structure has the advantage that compact-sized, device size is small, channel width is larger, insertion loss is relatively low, channels crosstalk is relatively low, and its technique makes simply, it is larger to make tolerance, it is very suitable for the single-chip integration with the device such as semiconductor laser, modulator, amplifier, detector, is the Primary Component for studying the few mould optic communication transceiver module of the single-chip integration based on mode division multiplexing technology.
Description
Technical field
The invention belongs to few mould technical field of photo communication, and in particular to a kind of based on multi-mode interference coupler block copolymer
Mode division multiplexing/demultiplexer structure, be it is a kind of can implementation pattern conversion and mode division multiplexing/demultiplexing InP-base waveguide device.
Background technology
Because in Networks of Fiber Communications, the Internet network fast development, people are to system data rates, data capacity demand
Sharply increase higher requirement proposed to communication bandwidth and transmission rate, expanding the transmission capacity of single optical fiber turns into weight
Weight.In order to improve the signal transmission capacity of Networks of Fiber Communications, there has been proposed wavelength-division multiplex technique, time-division multiplex technology,
The technologies such as polarization multiplexing are simultaneously experimentally verified.In addition, new optical modulation formats, such as OFDM, M-QAM etc. are carried
The high spectrum efficiency of system.However, because fiber amplifier holds to the limitation and nonlinear fiber, optical fiber power of amplifying bandwidth
The limitation to launching source power is limited, for realizing that bigger optical fiber transmission capacity is highly difficult.Therefore, it is eager to need one newly
Technological break-through further improve the transmission capacity of single optical fiber, to meet the growing high-speed communicating network need of people
Ask.
There has been proposed being transmitted to improve the method for the transmission capacity of single optical fiber using the various modes in optical fiber,
That is mode division multiplexing technology, information transfer is carried out using carrier of the multiple patterns in less fundamental mode optical fibre as signal, especially and ripple
The technologies such as multiplexing technology, time-division multiplex technology, polarization multiplexing are divided to be combined, the transmission that can greatly promote communication system is held
Amount.In mode division multiplexing system, mode multiplexing/demultiplexing device is a very crucial device, thus has obtained people's
Extensive concern.
Being presently used for the device of making pattern multiplexing demultiplexing device structure mainly includes asymmetrical directional coupler, cascade
Asymmetric Y waveguide, adiabatic coupler etc., most of device are all based on SOI waveguides.However, because these structures are present inherently
Defect itself cause mode multiplexing/demultiplexing device using these structure fabrications intrinsic deficiency to be present, such as based on non-right
Claim mode multiplexing/demultiplexing device of directional coupler not only to wavelength sensitive, and manufacture craft tolerance is smaller, most of device
Part all makes on soi structure.Then had based on the mode multiplexing/demultiplexing device for cascading asymmetric Y waveguide very big
Device size.Due to the mode multiplexing based on multi-mode interference coupler/demultiplexer structure have relatively low insertion loss and compared with
Wide channel width and cause the extensive interest of people in recent years.Mode multiplexing based on multi-mode interference coupler/demultiplex
See Fig. 1 with the operation principle of device：Basic mode is input in the patten transformation isolating construction 1 based on multi-mode interference coupler, this device
The length of part structure is 3L π/4, therefore is coupled in the output channel 3 of centre.And First-Order Mode is input to based on multiple-mode interfence coupling
When in the patten transformation isolating construction 1 of clutch, First-Order Mode is converted to two basic modes, and its power output is equal, phase by pi, point
Do not exported from the output channel 2 and passage 4 at both ends.The effect in pi/2 phase shift area is so that is exported respectively from passage 2 and passage 4
The π of the phase difference of the equal basic mode of two power outputs from the beginning is changed into pi/2.So exported from passage 2, passage 3, passage 4
Basic mode, when being input to length as in three-dB coupler structure of the 3L pi/2s based on multi-mode interference coupler structure, positioned at passage 3
Output port 6 of the basic mode still from centre exports.And due to basic mode phase by pi/2 of passage 2 and passage 4, the two basic modes
It is coupled to the output waveguide output (port 5 or port 7) of side, and opposite side output port does not have light output then.Therefore, should
Device not only realizes the function of pattern demultiplexing, and First-Order Mode is converted into basic mode, and its conversion efficiency is 100%.If
Device is inverted, then can implementation pattern multiplexing function.Mode multiplexing based on multi-mode interference coupler/demultiplexer structure
Key is to design the pi/2 phase shift area that one compact-sized, manufacture craft is simple, insertion loss is small and making tolerance is big.Realize
The pi/2 phase shift difference of mode multiplexing/demultiplexer structure mainly has two methods, and a kind of is the length for changing phase-shifted region, another
It is the effective refractive index for changing phase-shifted region.Changing the method for the length of phase-shifted region mainly has based on the phase-shifted region knot for tilting connection knot
Structure.But the structure inevitably introduces extra loss, and because output waveguide is inclined, it is impossible to directly with optical fiber,
Other devices are coupled.
Because the mode multiplexing based on InP/demultiplexing device has and the active device single-chip integration such as semiconductor laser
Advantage, therefore propose and on InP materials make one have small device size, big bandwidth chahnel, low insertion loss, low pass
The mode multiplexing of road crosstalk/demultiplexing device shows particularly important.
The content of the invention
It is an object of the invention to propose a kind of mode multiplexing based on InP materials/demultiplexer structure, its pi/2 phase
Difference is moved to realize by changing the thickness of waveguide core layer.The device can be applied to the application field of less fundamental mode optical fibre communication system, be
Primary Component therein.The device can not only realize the function of basic mode and First-Order Mode mode multiplexing/demultiplexing, and First-Order Mode can
Basic mode is thought, compared to 50% based on multi-mode interference coupler, 66% mode converter structure, the patten transformation of the device
It is more efficient, it is 100%, almost without modal loss.The mode multiplexing/demultiplexer structure has compact-sized, device chi
Very little advantage small, channel width is larger, insertion loss is relatively low, channels crosstalk is relatively low, and its technique make it is simple, make tolerance compared with
Greatly, it is very suitable for the single-chip integration with the device such as semiconductor laser, modulator, amplifier, detector.It is that research is based on mould
Divide the Primary Component of the few mould optic communication transceiver module of single-chip integration of multiplexing technology.
Brief description of the drawings
To further illustrate the particular technique feature of the present invention, below in conjunction with specific embodiment, and referring to the drawings, to this hair
It is bright to be described in further details, wherein：
Fig. 1 is the mode division multiplexing based on multi-mode interference coupler/demultiplexer structural representation；
Fig. 2 is the material structure profile of device；
Fig. 3 is the diagrammatic cross-section of the A-A ' lines of embodiment one in Fig. 1；
Fig. 4 is the diagrammatic cross-section of the A-A ' lines of embodiment two in Fig. 1.
Description of reference numerals：
1 is the patten transformation isolating construction based on multi-mode interference coupler；2 be the 3dB couplings based on multi-mode interference coupler
Clutch structure；3 be pi/2 phase shift structure；
1. it is N-type InP substrate；
2. it is the N-type InP cushions that thickness is 500nm；
3. be InGaAsP waveguide core layers (its band gap wavelength be 1.3 μm, and with InP Lattice Matchings)；
4. it is the undoped InP waveguides cap rock of 1.7 μ m-thicks,
Embodiment
Be based on increasing and reduce separately below phase-shifted region effective refractive index realize pi/2 phase shift difference method based on more
The mode division multiplexing of Mode interference coupler/demultiplexer structure is described.
Embodiment 1
Effective refractive index by increasing phase-shifted region realizes that the mould based on multi-mode interference coupler point of pi/2 phase shift difference is multiple
With/demultiplexer structure.
As shown in Figures 2 and 3, the epitaxial material structure of device is described as follows：First N-type InP substrate 1. on it is once outer
Prolong N-type InP cushions 2. (thickness 500nm), InGaAsP waveguide core layers thick 300nm 3. (its band gap wavelength is 1.3 μm, and
With InP Lattice Matchings), undoped InP etching stop layers thick 20nm, and the thick InGaAsP waveguide core layers of 100nm 3. (its band
Gap wavelength is 1.3 μm, and itself and InP Lattice Matchings).Will be except phase shift followed by photoetching and wet selective etching process
InGaAsP the waveguide core layers thick 100nm in other regions outside area erode.Then the μ m-thick of secondary epitaxy 1.7 is undoped
InP waveguides cap rock is 4..
The various pieces size of mode division multiplexing/demultiplexing device is in Fig. 1：The width of input waveguide port 1 is 3.4 μm,
The width of port 3 is 3.4 μm, and the width of output waveguide port 5 and port 7 is 1.7 μm, and the width of output waveguide port 6 is 3.4 μ
M, the width of port 2 and 4 is 1.7 μm.Multiple-mode interfence coupling regime width in patten transformation isolating construction (1) is 9 μm, length
For 178 μm.Multiple-mode interfence coupling regime width in three-dB coupler structure (2) is 9 μm, and length is 356 μm.Port 2, port 3
Length with port 4 is 14.7 μm, and because phase-shifted region is on port 4 or port 2, the length of phase-shifted region is 14.7 μm.Device
Part uses deep etching ridge waveguide structure, first then uses electricity by the pattern transfer on mask plate to substrate using photoetching process
Feel the etched InGaAsP waveguide core layers of coupled plasma dry etching technology.Complete the making work of whole mode division multiplexing/demultiplexer
Skill.
Simulation analysis have been carried out to the device using three-dimensional beamfoil spectrum.When fundamental signal is inputted into mode division multiplexing/demultiplex
During with device structure, almost all of pattern all exports from the output waveguide port 6 of centre.The insertion loss of its pattern only has
0.02dB, almost it can be ignored.It is almost all of when First-Order Mode signal is inputted into mode division multiplexing/demultiplexer structure
Pattern all exports from output port 7, and First-Order Mode is changed in order to which basic mode, its modal loss only have 0.21dB, can almost reach
To 100% mode conversion efficiency.According to the simulation result of above-mentioned device, the device successfully realizes basic mode and First-Order Mode
Pattern demultiplexes function, and due to the invertibity of light path, the device is inverted, you can implementation pattern is multiplexed function.Therefore, the device
Not only 100% First-Order Mode is converted to basic mode, and successfully realizes mode division multiplexing/demultiplexing function.And the device system
It is simple to make technique, making tolerance is larger, is very suitable for and active device carries out single-chip integration.
Embodiment 2：
Effective refractive index by reducing phase-shifted region realizes that the mould based on multi-mode interference coupler point of pi/2 phase shift difference is multiple
With/demultiplexer structure；
As shown in Figure 2 and Figure 4, the epitaxial material structure of device is described as follows：First N-type InP substrate 1. on it is once outer
Prolong N-type InP cushions 2. (thickness 500nm), InGaAsP waveguide core layers thick 300nm 3. (its band gap wavelength is 1.3 μm, and
Itself and InP Lattice Matchings), undoped InP etching stop layers thick 20nm, and the thick InGaAsP waveguide core layers of 100nm 3. (its
Band gap wavelength is 1.3 μm, and itself and InP Lattice Matchings).Followed by photoetching and wet selective etching process by phase-shifted region
InGaAsP waveguide core layers thick 100nm erode.Then the undoped InP waveguides cap rock of the μ m-thick of secondary epitaxy 1.7 is 4..
The various pieces size of mode division multiplexing/demultiplexing device is in Fig. 1：The width of input waveguide port 1 is 3.4 μm,
The width of port 3 is 3.4 μm, and the width of output waveguide port 5 and port 7 is 1.7 μm, and the width of output waveguide port 6 is 3.4 μ
M, the width of port 2 and 4 is 1.7 μm, and the multiple-mode interfence coupling regime width in patten transformation isolating construction (1) is 9 μm, length
For 178 μm.Multiple-mode interfence coupling regime width in three-dB coupler structure (2) is 9 μm, and length is 356 μm.Port 2, port 3
Length with port 4 is 14.7 μm, and because phase-shifted region is on port 4 or port 2, the length of phase-shifted region is 14.7 μm.Device
Part uses deep etching ridge waveguide structure, and its manufacture craft is same as Example 1.
Simulation analysis have been carried out to the device using three-dimensional beamfoil spectrum.When fundamental signal is inputted into mode division multiplexing/demultiplex
During with device structure, almost all of pattern all exports from the output waveguide port 6 of centre.
When First-Order Mode signal is inputted into mode division multiplexing/demultiplexer structure, almost all of pattern is all from output port 5
Output, and First-Order Mode is changed for basic mode, successfully realize mode conversion function.Therefore the device can realize basic mode and
The mode multiplexing of First-Order Mode/demultiplexing function, and First-Order Mode can be converted to basic mode, its mode conversion efficiency is almost
100%.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, should be understood that the specific embodiment that the foregoing is only the present invention, be not intended to limit the present invention, it is all at this
Within the spirit and principle of invention, any modification, equivalent substitution and improvements done etc., protection scope of the present invention is all contained in
Within.
Claims (10)
1. a kind of InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler, including：
The one patten transformation isolating construction (1) based on multi-mode interference coupler；
The one three-dB coupler structure (2) based on multi-mode interference coupler；
One pi/2 phase shift structure (3), the output of its input and the patten transformation isolating construction (1) based on multi-mode interference coupler
End connection, its output end are connected with the input of the three-dB coupler structure (2) based on multi-mode interference coupler；Phase-shift structure leads to
Change waveguide core layer thickness is crossed to realize by changing the effective refractive index of waveguiding structure.
2. InP-base mode division multiplexing/demultiplexer structure according to claim 1 based on multi-mode interference coupler, wherein
The described patten transformation isolating construction (1) based on multi-mode interference coupler includes：One input port 1, multiple-mode interfence coupling
Region and three output ends：Port 2, port 3 and port 4, the effect of the structure are that fundamental signal slave pattern is changed into separation knot
The intermediate output mouth 3 of structure (1) exports, and First-Order Mode signal is then converted to that two amplitudes are identical, the basic mode of phase by pi, point
The port 2 and port 4 of other slave pattern conversion isolating construction (1) both sides export.
3. InP-base mode division multiplexing/demultiplexer structure according to claim 1 based on multi-mode interference coupler, wherein
The described three-dB coupler structure (2) based on multi-mode interference coupler includes：Port 2, port 3, the input port of port 4 three,
Multiple-mode interfence coupling regime and port 5, port 6, the output port of port 7 three, the effect of the structure are so that slave pattern is changed
The basic mode that the output port 3 of isolating construction (1) exports exports from the middle output waveguide port 6 of three-dB coupler structure (2), makes
Obtain the basic mode that the port 2 of slave pattern conversion isolating construction (1) and port 4 export and close beam, the output from three-dB coupler structure (2)
Port 5 or port 7 export, and reach the purpose of modal cutoff.
4. InP-base mode division multiplexing/demultiplexer structure according to claim 1 based on multi-mode interference coupler, wherein
Described pi/2 phase shift structure (3) includes three waveguiding structures：Port 2, port 3 and port 4, the effect of the structure are such that in
The waveguide mode that port 2 and port 4 are transmitted produces the phase difference of pi/2.
5. according to the mode division multiplexing of the InP-base based on multi-mode interference coupler/demultiplexer described in any one of claim 1 or 2
Structure, the wherein width of the input port 1 of patten transformation isolating construction (1) are identical with the width of output port 3, output port 2
Width it is identical with the width of output port 4, the width of wherein input port 1 is twice of the width of output port 2.
6. according to the mode division multiplexing of the InP-base based on multi-mode interference coupler/demultiplexer described in any one of claim 1 or 3
Structure, the wherein width of the input port 2 of three-dB coupler structure (2) are identical with the width of output port 5, the width of input port 4
Degree is identical with the width of output port 7, and the width of input port 3 is identical with the width of output port 6.
7. InP-base mode division multiplexing/demultiplexer structure according to claim 1 based on multi-mode interference coupler, it is special
Sign is that material structure includes：
One substrate；
One cushion, the cushion are produced in substrate；
One waveguide core layer, the waveguide core layer make on the buffer layer；
One waveguide cap rock, the waveguide cap rock are produced in waveguide core layer.
8. InP-base mode division multiplexing/demultiplexer structure according to claim 7 based on multi-mode interference coupler, wherein
The material of waveguide core layer is the quaternary compound InGaAsP structures that band gap wavelength is 1.3 μm.
9. InP-base mode division multiplexing/demultiplexer structure according to claim 7 based on multi-mode interference coupler, wherein
The waveguide core layer thickness of described patten transformation isolating construction (1) is identical with the waveguide core layer thickness of three-dB coupler structure (2).
10. InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler according to claim 7, wherein π/
The port 2 of 2 phase-shift structures (3) and the waveguide core layer thickness of port 4 differ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510348841.6A CN104914506B (en) | 2015-06-23 | 2015-06-23 | InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510348841.6A CN104914506B (en) | 2015-06-23 | 2015-06-23 | InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104914506A CN104914506A (en) | 2015-09-16 |
| CN104914506B true CN104914506B (en) | 2017-12-19 |
Family
ID=54083729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510348841.6A Active CN104914506B (en) | 2015-06-23 | 2015-06-23 | InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104914506B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388564B (en) * | 2015-12-03 | 2018-03-23 | 中国科学院半导体研究所 | The few mould integreted phontonics transmitting chip of InP-base based on MMI couplers |
| CN106933001B (en) * | 2017-05-04 | 2019-04-19 | 上海交通大学 | The photon modulus conversion chip integrated based on silicon light |
| CN108196340B (en) * | 2018-01-10 | 2019-11-12 | 南京邮电大学 | A kind of three dimensional pattern conversion beam splitter based on multiple-mode interfence coupling |
| CN110455405A (en) * | 2018-05-08 | 2019-11-15 | 华为技术有限公司 | Beam splitter, optical power monitoring device and chip of laser |
| CN109186582B (en) * | 2018-09-27 | 2020-08-04 | 华中科技大学 | On-chip optical interference type angular velocity sensing module |
| CN111244751B (en) * | 2020-01-19 | 2021-08-03 | 中国科学院半导体研究所 | Optical communication transceiving structure integrating laser and photoelectric detector |
| CN111273404B (en) * | 2020-04-08 | 2021-11-02 | 上海交通大学 | Two-mode end face coupler |
| CN112630889A (en) * | 2021-03-05 | 2021-04-09 | 苏州海光芯创光电科技股份有限公司 | Photon integrated chip for processing multimode optical signal |
| CN115276804A (en) * | 2021-04-30 | 2022-11-01 | 华为技术有限公司 | Optical power adjusting system and optical power adjusting device |
| CN115032743A (en) * | 2022-07-26 | 2022-09-09 | 上海安湃芯研科技有限公司 | Multi-mode interference coupler type polarizer based on thin-film lithium niobate |
| CN116520494A (en) * | 2023-06-28 | 2023-08-01 | 之江实验室 | Silicon nitride waveguide TE0/TE1 broadband mode converter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5862288A (en) * | 1997-04-21 | 1999-01-19 | The United States Of America As Represented By The Secretary Of The Army | Self-imaging waveguide devices for wavelength division multiplexing applications |
| CN104503039A (en) * | 2014-12-30 | 2015-04-08 | 中国科学院半导体研究所 | Direct-dimming-type InP-based monolithic integration few-mode optical communication transmitter chip |
| CN104503023A (en) * | 2014-12-23 | 2015-04-08 | 中国科学院半导体研究所 | Outer modulation type less-mode optical communication emitting chip based on multi-mode interference device structure |
-
2015
- 2015-06-23 CN CN201510348841.6A patent/CN104914506B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5862288A (en) * | 1997-04-21 | 1999-01-19 | The United States Of America As Represented By The Secretary Of The Army | Self-imaging waveguide devices for wavelength division multiplexing applications |
| CN104503023A (en) * | 2014-12-23 | 2015-04-08 | 中国科学院半导体研究所 | Outer modulation type less-mode optical communication emitting chip based on multi-mode interference device structure |
| CN104503039A (en) * | 2014-12-30 | 2015-04-08 | 中国科学院半导体研究所 | Direct-dimming-type InP-based monolithic integration few-mode optical communication transmitter chip |
Non-Patent Citations (2)
| Title |
|---|
| "Design of a compact two-mode multi/demultiplexer consisting of multimode interference waveguides and a wavelength-insensitive phase shifter for mode-division multiplexing transmission";Takui Uematsu, et al.;《JOURNAL OF LIGHTWAVE TECHNOLOGY》;20120801;第30卷(第15期);2421-2426 * |
| "Multimode interference couplers for the conversion and combining of zero- and first-order modes";Juerg Leuthold, et al.;《JOURNAL OF LIGHTWAVE TECHNOLOGY》;19980731;第16卷(第7期);1228-1238 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104914506A (en) | 2015-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104914506B (en) | InP-base mode division multiplexing/demultiplexer structure based on multi-mode interference coupler | |
| CN102243340B (en) | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing | |
| CN105068189B (en) | InP-base wavelength-division mode division multiplexing lacks mould optic communication integreted phontonics transmitting chip | |
| WO2016061826A1 (en) | Mode multiplexer-demultiplexer and switching node | |
| Nakamura et al. | Compact and low-loss 8× 8 silicon photonic switch module for transponder aggregators in CDC-ROADM application | |
| CN109407209B (en) | Optical wavelength division-mode division hybrid multiplexing demultiplexer based on mode converter and Bragg waveguide grating | |
| CN103412367A (en) | On-chip polarization independent system of integrated optical waveguide chip | |
| CN107976738B (en) | Wavelength-division mould based on photonic crystal and Nanowire Waveguides divides hybrid multiplex device | |
| CN106125201B (en) | A kind of design method of mixed mode multiplexing device | |
| CN105388564B (en) | The few mould integreted phontonics transmitting chip of InP-base based on MMI couplers | |
| JP2013037017A (en) | Mode multiplexer/demultiplexer, optical transmitting and receiving device, and optical communication system | |
| CN104918145B (en) | Single-chip integration formula multi-wavelength palarization multiplexing/demultiplexer | |
| CN105278041B (en) | Optical element, light emitting devices and optical receiver apparatus | |
| JP3651876B2 (en) | Wavelength multiplexed optical signal multiplexing / demultiplexing method | |
| CN105911646B (en) | A kind of wavelength-division mould based on photonic crystal divides hybrid multiplex demultiplexer and method | |
| CN105988162A (en) | An optical manipulator | |
| CN101526648B (en) | Triplexer wave splitter based on planar lightguide integration | |
| CN111239895A (en) | Waveguide coupling structure and light emitter system | |
| CN104503023A (en) | Outer modulation type less-mode optical communication emitting chip based on multi-mode interference device structure | |
| CN104503039B (en) | A kind of few mould optical communication transmission device chip of straight mode InP-base single-chip integration | |
| CN104393926B (en) | Transmitter module for mode multiplexing-wavelength division multiplexing | |
| CN103576238B (en) | A kind of mode multiplexing/demodulation multiplexer of the N based on asymmetrical Y bifurcation structure | |
| CN104393925A (en) | Transmitter module based on mode-wavelength hybrid multiplexing | |
| CN108061927B (en) | Photonic crystal wavelength division mode division hybrid multiplexing demultiplexer and method | |
| JP6631848B2 (en) | Mode multiplexer / demultiplexer and mode multiplex transmission system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |