CN102243340B - Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing - Google Patents
Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing Download PDFInfo
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Abstract
The invention discloses a hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing, which comprises an input port region and a detector array region, wherein a waveguide region is arranged between the input port region and the detector array region of the chip; the waveguide region comprises an input waveguide, three Mach-Zehnder interferometers and four output waveguides; the input port region is positioned at the input end of the chip and comprise an input optical fiber arranged in a V-shaped groove, a groove is arranged behind the V-shaped groove and connected with the input waveguide of the waveguide region; and the output waveguides of the waveguide region are connected with the detector array region. According to the invention, a hybrid integrated technology and a plane integration technology are combined, and multi-channel single fiber transmission and miniaturization of a CWDM (Coarse Wavelength Division Multiplexing) demultiplexing device are realized.
Description
Technical field
The present invention relates to the wavelength division multiplex device of optical communication field, relate in particular to a kind of mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing (CWDM has another name called coarse wavelength division multiplexer).
Background technology
Adopt mixing integrated technology and slab guide technology to realize that the miniaturization active device is one of trend of optical active component development now.Mixing integrated technology can be integrated in active optical element (as semiconductor laser chip, detector chip, TIA, modulator etc.), passive optical waveguide components and parts (as PLC waveguide chip, film filter plate and diffraction grating etc.), electric transmission line, groove and the V-type groove etc. with fixation on the chip with common substrate, thereby realizes miniaturization of devices.The utilization of slab guide technology has the function element of multiplex/demultiplex effect, as Mach-Zehnder interferometer, multimode waveguide photoswitch, directional coupler, optical interleaver, array waveguide grating etc., can realize the multi-wavelength transmission of laser, multiplexing, demultiplexing.Waveguide itself has the characteristic of filtering.The slab guide technology can be removed the application of film filter plate in the conventional active device from, can simplified structure, reduce production process, and the development to device simultaneously has promote significance.
The active device of existing optical communication dual wavelength, multi-wavelength, adopt the form of the encapsulation of TO type, film filter plate multiplex/demultiplex such as single fiber bi-directional device, single fiber three-way device more, can only realize the separation of the multi-wavelength of wide wavelength interval, then can't separate for the Coarse Wavelength Division Multiplexing (CWDM) of narrow wavelength interval, the multi-wavelength signals of dense wave division multipurpose (DWDM).The slab guide technology can realize having the multiplex/demultiplex of the multi-wavelength of narrow wavelength interval.Array waveguide grating can be realized the separation of multi channel signals, but the cost height, and volume is bigger; Optical interleaver can be realized the separation of multi channel signals, and the spectral characteristic excellence, but its structure adopts the multiple-stage filtering structure, and volume is big, and technology and imperfection; Utilize the filtering characteristic of Mach-Zehnder interferometer, select suitable structure and parameter, cooperate directional coupler or multi-mode coupler, can realize having the demultiplexing of the multi-wavelength of narrow wavelength interval, its volume is moderate, filtering characteristic is better, is appropriate to the less multiplex/demultiplex occasion of port number.
In the hyperchannel demultiplexing panel detector structure of having reported, mainly contain two kinds of structures, a kind of is to utilize the bigger multiplexing demultiplexing device of volume to realize multichannel demultiplexing in the optical fiber communication main line, active devices itself such as the demodulation multiplexer of this structure and detector are separated, it is integrated to be unrealized, another kind of structure be demux architecture to be mixed integrated with active device, but detector of an input optical fibre correspondence fails to realize that single fiber transmits.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing, utilize the mixing integrated technology to combine with the plane integrated technology, to realize the transmission of hyperchannel single fiber and the miniaturization of CWDM demultiplexing device.
For achieving the above object, technical scheme of the present invention is achieved in that
Be used for the mixing integrated planar waveguide photodetector chip of thick wavelength-division demultiplexing, comprise input end oral region and detector array district; Also be provided with wave guide zone between the input end oral region of this chip and the detector array district; Described wave guide zone comprises an input waveguide, three Mach-Zehnder interferometers and four output waveguides; Described input port district is positioned at the input end of this chip, comprises an input optical fibre that places the V-type groove, is provided with groove behind the described V-type groove, and groove links to each other with the input waveguide of described wave guide zone; The output waveguide of described wave guide zone and described detector array district join; Described three Mach-Zehnder interferometers are respectively four wavelength (de) multiplexing Mach-Zehnder interferometers and two dual wavelength demultiplexing Mach-Zehnder interferometers, wherein, the input end of described four wavelength (de) multiplexing Mach-Zehnder interferometers links to each other with described input waveguide, its output terminal links to each other with the input end of described two dual wavelength demultiplexing Mach-Zehnder interferometers respectively, the output terminal of described two dual wavelength demultiplexing Mach-Zehnder interferometers is connected with described four output waveguides respectively, thereby realizes the ripple demultiplexing of four wavelength.
Wherein, described three Mach-Zehnder interferometers are respectively four wavelength (de) multiplexing Mach-Zehnder interferometers and two dual wavelength demultiplexing Mach-Zehnder interferometers; Wherein, the input end of described four wavelength (de) multiplexing Mach-Zehnder interferometers links to each other with described input waveguide, and its output terminal joins with the input end of described two dual wavelength demultiplexing Mach-Zehnder interferometers respectively, to realize the transmission of light wave.
Described each Mach-Zehnder interferometer includes an input port, interferes arm and an output port; Wherein, the structure of described input port any in the following way: 1 * 2 coupling mechanism of 3 * 3 straight wave guide coupling mechanisms of 3 * 3 coupling mechanisms of 50:0:50,50:0:50,2 * 2 coupling mechanisms of 50:50,50:50,1 * 2 straight wave guide coupling mechanism of 50:50; Described interference arm be positioned at after the input coupler and output coupler before; The output port of described Mach-Zehnder interferometer adopts 2 * 2 directional couplers of 50:50.
This chip core material is GeSi/Si, GaAs/GaAlAs, SOI or LiNbO
3
Described wave guide zone is growth silicon dioxide SiO on silica-based
2Under-clad layer, growth has the sandwich layer of doping on it, plates SiO on the described sandwich layer
2Top covering, the core district is embedded structure.
The refractive index of described sandwich layer is 0.75% or 1.5%.
A kind of at least in the following way of the interference arm configuration of described Mach-Zehnder interferometer: (a) two arc waveguide types, (b) single arc waveguide type, (c) symmetrical waveguide type.
The detector array in described detector array district is positioned on the silicon optical bench.
Mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing provided by the present invention has the following advantages:
This chip adopts ripe mixing integrated technology and plane wave waveguide technology, at the silica-based SiO that plates
2The waveguide covering, and in covering the SiO of grow doping Ge
2Sandwich layer, whole wave guide is embedded structure; Chip comprises input end oral region, optical planar circuit (PLC) wave guide zone and detector array; Four wavelength with narrow wavelength interval of single fiber input independently can also be separated, chip itself has the characteristic of branch wavelength, filtering, the transfer efficiency height, isolation is higher, volume is little, material is simple, easily make, and can satisfy the demand of CWDM four wavelength (de) multiplexings.
Description of drawings
Fig. 1 is 1 * 4 demultiplexing planar waveguide chip front view of the embodiment of the invention;
Fig. 2 is 1 * 4 demultiplexing planar waveguide chip side view of the embodiment of the invention;
Fig. 3 is the wave guide zone front view after chip shown in the present adds the SCC element;
Fig. 4 is Mach-Zehnder interferometer (MZI-1) structural representation;
Fig. 5 is the various frame mode synoptic diagram of directional coupler;
Fig. 6 is the structural representation that passive Mach-Zehnder interferometer is interfered arm;
Fig. 7 is dual wavelength filter structure synoptic diagram;
Fig. 8 is dual wavelength Mach-Zehnder interferometer demultiplexing synoptic diagram;
Fig. 9 is chip structure example one synoptic diagram;
Figure 10 is chip structure example two synoptic diagram.
Embodiment
Below in conjunction with accompanying drawing and embodiments of the invention product of the present invention is described in further detail.
As shown in Figure 1,1 * 4 planar waveguide chip mainly is made up of three parts shown in: input end oral region 1, wave guide zone 2 and detector array district 3.This chip structure is distributed as: input end oral region 1, be positioned at the input end of chip, and comprise a V-type groove 4, input optical fibre 5, described input optical fibre 5 places in the V-type groove 4, is provided with groove 6 behind the V-type groove 4, and groove 6 backs are wave guide zone 2.Described wave guide zone 2 comprises an input waveguide 7, three Mach-Zehnder interferometers 9,13,14 and 4 output waveguides.Connect detector array 17 after described 4 output waveguides, detector array 17 is positioned on the silicon optical bench 18.Three Mach-Zehnder interferometers are respectively four wavelength (de) multiplexing Mach-Zehnder interferometers 9 and two dual wavelength demultiplexing Mach-Zehnder interferometers 13,14, described dual wavelength Mach-Zehnder interferometer 13,14 joins with an output port of four wavelength (de) multiplexing Mach-Zehnder interferometers 9 respectively, to realize the transmission of light wave.The Mach-Zehnder interferometer comprises 3 * 3 straight wave guide coupling mechanisms 8,11,12 of a 50:0:50, interferes 2 * 2 directional couplers 10,15 and 16 of arm and 50:50.
The material of the sandwich layer of chip as shown in Figure 2, can adopt silicon (SOI), the lithium niobate (LiNbO on germanium silicon (GeSi)/silicon (Si), gallium arsenide (GaAs)/arsenic gallium aluminium (GaAlAs), the dielectric substrate
3) wait preparation, be example with the GeSi/Si material, silica-based 18 is substrate, according to three zoness of different, the production method difference of silica-based upper area.
Input optical fibre ports zone 1 etching V-type groove 4 on silica-based, the input waveguide 7 of the position of described V-type groove 4 and wave guide zone 1 is complementary.This zone manufacture craft and wave guide zone SiO
2Growth manufacture craft difference, for ease of making, the boundary etched recesses 6 in two zones is used for separating two zones, makes when making and does not disturb mutually.
The wave guide zone SiO that grows on silica-based
2Under-clad layer 19, growth has the sandwich layer 20 of doping (as Ge) on it, plates SiO on the sandwich layer 20
2Top covering 21, the core district is embedded structure, as shown in Figure 2.The refractive index of sandwich layer is decided according to different needs, and its scheme of joining choosing mainly contains two kinds: 1. refractive index contrast △ is 0.75%, and waveguide is rectangular waveguide, and the cross section lateral dimension is 6um * 6um, is used for the demand of conventional waveguide chip; 2. refractive index contrast △ is 1.5%, and waveguide is rectangular waveguide, and the cross section lateral dimension is 4um * 4um, is used for the demand than miniature chip.
According to the difference of refractive index, there are two kinds of optional structures in wave guide zone and detector array district:
1. refractive index contrast △ is 0.75% o'clock, in order to mate the spot size of input optical fibre 5 and wave guide zone rectangular waveguide 7, need make spot size conversion (SSC, Spot size conversion) element 22 at the input port of waveguide region.The thickness of SSC is identical with duct thickness, laterally is " loudspeaker " shape and distributes.△ is 0.75% o'clock, transmits SiO in order to limit light wave preferably in sandwich layer
2The thickness of covering need be made thicker relatively.
2. refractive index contrast △ is 1.5% o'clock, and sandwich layer is stronger to the constraint ability of light wave, can deduct the making of spot size conversion element, and SiO
2The thickness of covering can be made thinner, and its structure can be with reference to figure 1～3.
District as shown in Figure 4 is used for that CWDM is had four wavelength separated of narrow wavelength interval Δ λ, and its structure comprises four fens wavelength Mach-Zehnder interferometer 9 and two two wavelength Mach- Zehnder interferometers 13,14 that divide.
Mach-Zehnder interferometer 9 can be with four signal λ of transmission
1, λ
2, λ
3, λ
4From two ports, export, wherein λ
1, λ
3From port 23 outputs, λ
2, λ
4From port 24 outputs, also can make λ
1, λ
3From port 24 outputs, λ
2, λ
4From port 23 outputs, as shown in Figure 4.
Four wavelength satisfy following relation:
λ
4＝λ
3+Δλ＝λ
2+2Δλ＝λ
1+3Δλ.
The structure of Mach-Zehnder interferometer 9 comprises coupling mechanism 8, interference arm 25 and the directional coupler 10 of input waveguide 7,50:50, wherein interfere arm two branch- waveguides 26,27 length difference, its geometrical length difference is Δ L, directional coupler 10 essence are a 50:50 coupling mechanism, suitable interference region length is set, two light waves can be closed ripple, and the light wave after will interfering is from different ports 23,24 outputs.
The basic functional principle of described Mach-Zehnder interferometer 9 is: each wavelength X
iEnter 50:50 coupling mechanism 8 by input end, form the light wave that two bundles wait amplitude, have optical path difference n after the transmission of light wave through interference arm 25
iΔ L interferes λ after process directional coupler 10 closes ripple again
1, λ
3Long mutually in port 23 interference, disappear mutually in port 24 interference, thereby from port 23 outputs, λ
2, λ
4Long mutually in port 24 interference, disappear mutually in port 23 interference, thereby from port 24 outputs.Because λ
1, λ
3And λ
2, λ
4Two groups wavelength difference is 2 Δ λ, is 2 times of two wavelength intervals, for the design of follow-up dual wavelength Mach-Zehnder interferometer 13,14 facilitates.
As shown in Figure 5, the input port of Mach-Zehnder interferometer adopts the 50:50 coupling mechanism, and its structure can adopt at least five kinds of modes, and it is respectively: (a) 3 * 3 coupling mechanisms, (b) 3 * 3 straight wave guide coupling mechanisms; (c) 2 * 2 coupling mechanisms; (d) 1 * 2 coupling mechanism; (e) 1 * 2 straight wave guide coupling mechanism.Wherein:
3 * 3 coupling mechanisms, especially 3 * 3 straight wave guide coupling mechanisms are made of three straight wave guides, set the splitting ratio that suitable coupling length can satisfy each wavelength and satisfy 50:0:50 substantially, and this structure is conducive to the etching of coupling mechanism simultaneously, is convenient to make.
2 * 2 coupling mechanisms, especially 1 * 2 coupling mechanism, its structural symmetry distributes, and can satisfy the splitting ratio of 50:50, and it is shorter that it makes length, is beneficial to miniaturization of devices.1 * 2 straight wave guide coupling mechanism is made of two straight wave guides, and this structure is conducive to the etching of coupling mechanism, be convenient to make, but coupling length is greater than 3 * 3 straight wave guide coupling mechanisms.
Four kinds of coupling mechanisms are compared, 3 * 3 straight wave guide coupling mechanism coupling lengths moderate (about 1mm), and spectrophotometric result is good, no bending loss, simultaneously simple in structure, the light wave characteristic is better than 1 * 2 coupling mechanism, for joining of the best selected scheme.
As shown in Figure 6, the interference arm configuration of Mach-Zehnder interferometer can adopt at least three kinds of modes.It is respectively (a) two arc waveguide types; (b) single arc waveguide type; (c) symmetrical waveguide type.Wherein:
It is that two S types waveguide 28,29 is formed that two arc waveguide types are interfered arm, and the waveguide of single S type is by two tangent forming of identical circular arc, and this structure can reduce width and the length of its follow-up directional coupler 10.Single arc waveguide type interferes arm to be made up of a S waveguide 30 and a straight wave guide 31, and this structure can reduce the length of interfering arm, interferes arm but the width of follow-up directional coupler 10 is greater than two arc waveguide types.The symmetry waveguide type interferes arm to be made up of 32,33 and straight wave guides 34 of two S types waveguide, and two S waveguides are tangent, and along the center line symmetry of interfering arm, the width minimum of the directional coupler 10 that this structure is follow-up, but interfere arm lengths longer.In above-mentioned three kinds of structures, the geometrical length difference of two branch-waveguides is equal to Δ L, vertically has identical length simultaneously, is convenient to the making of follow-up directional coupler 10.Through comparing, single arc waveguide type interference arm lengths and width are all moderate, make simply, for joining of the best selected scheme.
What in sum, the optimum structure of Mach-Zehnder interferometer 9 adopted is combined as: 3 * 3 straight wave guide coupling mechanisms, single arc waveguide type are interfered arm and 2 * 2 coupling mechanisms.
As shown in Figure 7, for the λ that has separated
1, λ
3And λ
2, λ
4, adopt filter structure to separate respectively, can adopt at least three kinds of structures, it is respectively (a) MZI; (b) directional coupler; (c) multi-mode coupler; Wherein:
The Mach-Zehnder interferometer can be realized the filtering of dual wavelength, its moderate dimensions preferably.
Directional coupler can separate the dual wavelength of wide wavelength interval preferably, but when being used for the filtering of dual wavelength of narrow wavelength interval, length is longer.
Multi-mode coupler can be realized the separation of dual wavelength, but when being used for the filtering of dual wavelength of narrow wavelength interval, length is longer.
Therefore bestly join that to select scheme be the Mach-Zehnder interferometer structure, its directional coupler 11,12 adopts 3 * 3 straight wave guide coupling mechanisms, interferes arm to adopt single arc waveguide type to interfere arm configuration, and directional coupler 15,16 adopts 2 * 2 coupling mechanisms, as shown in Figure 4.
As seen, the demultiplexing process of dual wavelength Mach- Zehnder interferometer 13,14, as shown in Figure 8.
Fig. 9 is the described chip most preferred embodiment one of the embodiment of the invention, as shown in Figure 9, chip wave guide zone wherein comprises 9,13 and 14 3 interferometers, two output waveguides 23 of interferometer 9,24 length is identical, lengthwise position is identical, connects the input waveguide of interferometer 13 and 14 after 23,24 respectively.In 13 and 14 the interference arm arc waveguide respectively towards the upper and lower of chip to, thereby reduce volume, also be convenient to design.Because 13,14 interference arm lengths difference, need behind output waveguide 35-38, dock the straight wave guide of suitable length, can guarantee that each passage has identical longitudinal length.
Four wavelength X
1(1270nm), λ
2(1290nm), λ
3(1310nm), λ
4Signal (1330nm) enters chip from input waveguide, pass through the partial wave of interferometer 9 afterwards after, λ
1, λ
3From upper port 23 outputs, and enter in the interferometer 13; λ
2, λ
4From lower port 24 outputs, and enter in the interferometer 14.λ
1, λ
3Through after the separation of interferometer 14, export from 35,36 passages; λ
2, λ
4Through after the separation of interferometer 14, export from 37,38 passages.
Two interfere arms 26,27 geometrical length difference Δ L to satisfy:
n
1ΔL=(m-0.25)λ
1、n
3ΔL=(m+q-0.25)λ
3、
n
2ΔL=(m+p
1+0.25)λ
2、n
4ΔL=(m+p
2+0.25)λ
4。
Wherein: m, q are integer, p
1, p
2Be even number, n
iBe λ
iRefractive index.
Two geometrical length difference Δ L that interfere arm in the interferometer 13
2Satisfy:
n
1ΔL
2=(m-0.25)λ
1、n
3ΔL
2=(m+p
3+0.25)λ
3.
Wherein: m is integer, p
3Be even number, n
iBe λ
iRefractive index.
Two geometrical length difference Δ L that interfere arm in the interferometer 14
3Satisfy:
n
2ΔL
3=(m-0.25)λ
2n
4、n
4ΔL
3=(m+p
4+0.25)λ
4.
Wherein m is integer, p
4Be even number, n
iBe λ
iRefractive index.
Figure 10 is the described chip most preferred embodiment two of the embodiment of the invention, as shown in figure 10, another most preferred embodiment of chip wave guide zone wherein, be 3 * 3 straight wave guide coupling mechanisms are changed with the difference of example one and make 2 * 2 straight wave guide 50:50 coupling mechanism, like this, can reduce the etching of coupling mechanism waveguide.
Because the coupling mechanism difference, following variation can take place in the optical path difference of associated interference arm:
Two interfere arms 26,27 geometrical length difference Δ L to satisfy:
n
1ΔL=mλ
1、n
3、ΔL=(m+q)λ
3、
n
2ΔL=(m+p
1+0.5)λ
2、n
4ΔL=(m+p
2+0.5)λ
4。
Wherein: m, q are integer, p
1, p
2Be even number, n
iBe λ
iRefractive index.
Two geometrical length difference Δ L that interfere arm in the interferometer 13
2Satisfy:
n
1ΔL
2=mλ
1、n
3ΔL
2＝(m+p
3+0.5)λ
3。
Wherein: m is integer, p
3Be even number, n
iBe λ
iRefractive index.
Two geometrical length difference Δ L that interfere arm in the interferometer 14
3Satisfy:
n
2ΔL
3=mλ
2、n
4ΔL
3=(m+p
4+0.5)λ
4。
Wherein: m is integer, p
4Be even number, n
iBe λ
iRefractive index.
SiO is adopted in waveguide
2The preparation of/Si material, the refractive index contrast of waveguide is 0.75%, sectional dimension is 6um * 6um.50:0:50 coupling mechanism 8,11,12 the about 1mm of coupling length, straight wave guide is spaced apart 2um, and the curvature of curved waveguide is all greater than 5mm, the about 15mm of the length in whole wave guide district, wide 5mm.The maximum 2dB of the insertion loss of each channel is more than the channel isolation 25dB.
The above is preferred embodiment of the present invention only, is not for limiting protection scope of the present invention.
Claims (1)
1. be used for the mixing integrated planar waveguide photodetector chip of thick wavelength-division demultiplexing, comprise input end oral region and detector array district; It is characterized in that, also be provided with wave guide zone between the input end oral region of this chip and the detector array district; Described wave guide zone comprises an input waveguide, three Mach-Zehnder interferometers and four output waveguides; Described input port district is positioned at the input end of this chip, comprises an input optical fibre that places the V-type groove, is provided with groove behind the described V-type groove, and groove links to each other with the input waveguide of described wave guide zone; The output waveguide of described wave guide zone and described detector array district join; Described three Mach-Zehnder interferometers are respectively four wavelength (de) multiplexing Mach-Zehnder interferometers and two dual wavelength demultiplexing Mach-Zehnder interferometers, wherein, the input end of described four wavelength (de) multiplexing Mach-Zehnder interferometers links to each other with described input waveguide, its output terminal links to each other with the input end of described two dual wavelength demultiplexing Mach-Zehnder interferometers respectively, the output terminal of described two dual wavelength demultiplexing Mach-Zehnder interferometers is connected with described four output waveguides respectively, thereby realizes the ripple demultiplexing of four wavelength.
2. the mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing according to claim 1 is characterized in that, described each Mach-Zehnder interferometer includes an input port, interferes arm and an output port; Wherein, the structure of described input port any in the following way: 1 * 2 coupling mechanism of 3 * 3 coupling mechanisms of 50:0:50,2 * 2 coupling mechanisms of 50:50,50:50; Described interference arm be positioned at after the input coupler and output coupler before; The output port of described Mach-Zehnder interferometer adopts 2 * 2 directional couplers of 50:50.
3. according to each described mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing of claim 1 to 2, it is characterized in that this chip core material is silicon or the lithium niobate on germanium silicon/silicon, gallium arsenide/arsenic gallium aluminium, the dielectric substrate.
4. according to each described mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing of claim 1 to 2, it is characterized in that described wave guide zone growth silicon dioxide SiO on silica-based
2Under-clad layer, growth has the sandwich layer of doping on it, plates SiO on the described sandwich layer
2Top covering, the core district is embedded structure.
5. the mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing according to claim 4 is characterized in that the refractive index of described sandwich layer is 0.75% or 1.5%.
6. the mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing according to claim 2, it is characterized in that, a kind of at least in the following way of the interference arm configuration of described Mach-Zehnder interferometer: two arc waveguide types, single arc waveguide type, symmetrical waveguide type.
7. the mixing integrated planar waveguide photodetector chip for thick wavelength-division demultiplexing according to claim 1 is characterized in that the detector array in described detector array district is positioned on the silicon optical bench.
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| CN201732181U (en) * | 2010-07-08 | 2011-02-02 | 武汉驿路通光讯有限公司 | V-groove type waveguide demultiplexer |
| CN101980460A (en) * | 2010-10-29 | 2011-02-23 | 武汉光迅科技股份有限公司 | Monolithically integrated multi-wavelength differential quadrature phase shift keying (DQPSK) demodulator and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1754337A (en) * | 2001-05-10 | 2006-03-29 | 富士通株式会社 | Receive the receiver and the method for multiple tracks light signal |
| CN101405974A (en) * | 2005-11-29 | 2009-04-08 | 俄罗斯司法部所辖之俄罗斯联邦军事特殊两用知识产权事务法律保护委员会 | Controllable optical multiplexer |
| CN201732181U (en) * | 2010-07-08 | 2011-02-02 | 武汉驿路通光讯有限公司 | V-groove type waveguide demultiplexer |
| CN101980460A (en) * | 2010-10-29 | 2011-02-23 | 武汉光迅科技股份有限公司 | Monolithically integrated multi-wavelength differential quadrature phase shift keying (DQPSK) demodulator and manufacturing method thereof |
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