CN110286540A - A kind of 1 × 4 lithium niobate waveguides photoswitch increasing Dare interference structure based on Mach - Google Patents
A kind of 1 × 4 lithium niobate waveguides photoswitch increasing Dare interference structure based on Mach Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/35—Optical coupling means having switching means
- G02B6/354—Switching arrangements, i.e. number of input/output ports and interconnection types
- G02B6/3544—2D constellations, i.e. with switching elements and switched beams located in a plane
- G02B6/3548—1xN switch, i.e. one input and a selectable single output of N possible outputs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/225—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure
- G02F1/2252—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference in an optical waveguide structure in optical fibres
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12145—Switch
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
- G02F1/212—Mach-Zehnder type
Abstract
The invention discloses a kind of 1 × 4 lithium niobate waveguides photoswitches for increasing Dare interference structure based on Mach, can be applied to optic communication, light network, optical oomputing etc., belong to photoelectron technical field.The present invention has a lightwave entry end mouth, four Lightwave exit end mouths.The present invention is composed of the switch unit array of two-stage 31 × 2 MZI structures.There is one 1 × 2 MZI in first order optical switch element, light respectively enters two interfere arms up and down by Y type waveguide beam splitter, then interferes output by 2 × 2 directional coupler.The input terminal of Y type waveguide beam splitter is parallel with two output ports of first order directional coupler respectively in two parallel MZI optical switch elements of the second level connects.In MZI when interfere arm phase difference reaches pi/2, switching of the optical path between two output ports may be implemented, for two-stage MZI, can realize the function of four roads gating, provide greater flexibility to make extensive array of photoswitch.
Description
Technical field
The present invention relates to optical components, more particularly, to a kind of 1 × 4 lithium niobate for increasing Dare interference structure based on Mach
Waveguide optical switch can be applied to optic communication, light network, optical oomputing etc., belong to photoelectron technical field.
Background technique
Photoswitch is the core devices of light exchange, and influences one of the principal element of optical-fiber network performance.Photoswitch conduct
The Primary Component of all-optical networking network of new generation is mainly used to realize that the Route Selection on photosphere face, wavelength selection, light intersect and connects
It connects and the functions such as self-healed protection.In all optical network, OADM device (OADM) and optical cross connect (OXC) are indispensable
Apparatus for network node, and photoswitch and array of photoswitch are then the core devices in these equipment.As information-intensive society is to logical
Believe the growing continuous demand of capacity, the transmission bandwidth of fiber optic communication network rapidly increases.Correspondingly, high-speed communication network opens light
The switching rate of pass also proposed increasingly higher demands.The switching rate of MEMS (MEMS) photoswitch is millisecond amount
Grade, thermal-optical type optical waveguide switch switching rate after Optimal Structure Designing can achieve tens microseconds, but still not be able to satisfy
The requirement of ultra high-speed optical exchange.Electrooptical switching can quickly change the state of switch in nanosecond order.LiNbO3With very big
Electro-optic coefficient (30.8 × 10-12V/m) and electro-optic response is exceedingly fast (t=10-19s), by LiNbO3Manufactured fiber waveguide device is
Composition modern ultrahigh speed, large capacity, long-distance optical fiber communicate and the Primary Component of optical switching system.
Photoswitch using Mach Zehnder interference structure (Mach-Zehnder-Interferometer, MZI) has
High Extinction Ratio, low crosstalk, the good characteristic of low-loss etc. attract wide attention.By the length difference for increasing by two interfere arms
It can reduce switch power, but be unfavorable for the miniaturization of device and integrated again in this way.Therefore reasonable waveguiding structure is designed
It is of great significance for reducing switch power, improving switching speed.In addition, to meet the optical computing of big data quantity, communication
And the needs of optical-fiber network, the number for increasing single switch element are also necessary.Commercial lithium niobate waveguides photoswitch at present
Volume is larger, and integrated level is not high, is applied to 1 × 2,2 × 2 low port switching system more, light can only be realized in two exit ends
The utilization rate of optical path switching between mouthful, integrated level and chip is not high.Therefore, it is necessary to develop new device architecture to mention
Its high integrated level, light cutting between port as much as possible is realized in the case where not increasing chip size and technology difficulty
It changes.
Summary of the invention
A kind of 1 × 4 lithium niobate waveguides photoswitch increasing Dare interference structure based on Mach, by input optical fibre all the way (1), niobium
Sour lithium waveguide chip (3), four road output optical fibres (12) are constituted, it is characterised in that: wherein lithium niobate waveguides chip (3) includes by one
The first order optical switch element (I) that a 1 × 2 MZI is constituted and the second level photoswitch being made of two 1 × 2 parallel MZI
Unit (II), described 1 × 2 MZI include lithium niobate base bottom (13) and buffer layer (14), the traveling wave electrode for being formed in its surface
(4) it is made of with optical waveguide (5), the traveling wave electrode (4) the ground electrode (10) of central electrode (9) and its two sides, the light wave
It leads (5) and successively constitutes Y type waveguide beam splitter (6), up and down parallel Waveguide interference arm (7), 3dB directional coupler (8)；It is described
The light all the way that the Y type waveguide beam splitter (6) of 1 × 2 MZI in first order optical switch element (I) will be inputted by input optical fibre (1)
It is divided into two-way, respectively enters two arms up and down of Waveguide interference arm (7), the output end and 3dB of Waveguide interference arm (7) orient coupling
Clutch (8) connection, two-way generate phase under the action of the light of two arms up and down of Waveguide interference arm (7) is in traveling wave electrode (4)
Difference, when phase difference reaches pi/2, from output port interference output under 3dB directional coupler (8), when phase difference reaches-pi/2 when,
From output port interference output on 3dB directional coupler (8), optical path is just realized between two output ports of 1 × 2 MZI
Switching, i.e. two roads gating function；The Y type waveguide of two 1 × 2 MZI in the second level optical switch element (II) point
Beam device (6) is parallel with the output port of upper level 3dB directional coupler (8) to be connected, from upper level 3dB directional coupler (8)
The light of a certain output port output enters the Y type of a certain 1 × 2 MZI optical switch element in second level optical switch element (II)
In waveguide beam splitter (6), equally under the action of traveling wave electrode (4), from 3dB directional coupler (8) one of output port
Interference output；By controlling the traveling wave electrode (4) in three 1 × 2 MZI respectively, the function of four roads gating is just realized；
Four output ports are separately connected four road output optical fibres (12).
In order to solve the above technical problems, the present invention provides a kind of 1 × 4 lithium niobates for increasing Dare interference structure based on Mach
Waveguide optical switch, by input optical fibre all the way, lithium niobate waveguides chip, four road output optical fibres are constituted, wherein lithium niobate waveguides chip
Including the first order optical switch element being made of one 1 × 2 MZI and the second level being made of two 1 × 2 parallel MZI
Optical switch element, described 1 × 2 MZI include lithium niobate base bottom and the buffer layer, traveling wave electrode and light wave for being formed in its surface
It leads, the traveling wave electrode is made of the ground electrode of central electrode and its two sides, and the optical waveguide successively constitutes Y type waveguide beam splitting
Device, up and down parallel Waveguide interference arm, 3dB directional coupler；The Y type of 1 × 2 MZI in the first order optical switch element
The light all the way inputted by input optical fibre is divided into two-way by waveguide beam splitter, respectively enters two arms up and down of Waveguide interference arm,
The output end of Waveguide interference arm is connect with 3dB directional coupler, two-way two arms up and down of Waveguide interference arm light in traveling wave
Phase difference is generated under the action of electrode, when phase difference reaches pi/2, is exported from output port interference under 3dB directional coupler, when
Phase difference reaches-pi/2 when, from output port interference output on 3dB directional coupler, just realize MZI of the optical path 1 × 2
The function of switching between two output ports, i.e. two roads gating；Two 1 × 2 MZI's in the second level optical switch element
Y type waveguide beam splitter is parallel with the output port of upper level 3dB directional coupler to be connected, from upper level 3dB directional coupler
The light of a certain output port output enters the Y type waveguide of a certain 1 × 2 MZI optical switch element in the optical switch element of the second level
In beam splitter, equally under the action of traveling wave electrode, from the one of output port interference output of 3dB directional coupler；Pass through
The traveling wave electrode in three 1 × 2 MZI is controlled respectively, for entire light shutter device, just realizes four roads gating
Function；Four output ports are separately connected four road output optical fibres (12).
The lithium niobate base bottom Y biography type is cut using X.
The Y type waveguide beam splitter, up and down parallel Waveguide interference arm, 3dB directional coupler are all made of optical waveguide, institute
It is of same size to state optical waveguide, using annealed proton exchange lithium niobate single mode waveguide, through over cleaning substrate slice, prepare mask, photoetching,
Proton exchange, annealing, end face polishing, waveguide adjustment and checking step are made.
The waveguide bend part of the Y type waveguide beam splitter and 3dB directional coupler uses rised cosine curved.
The input optical fibre is aligned using U-type groove, and the output optical fibre is using the V-groove array alignment equidistantly arranged.
The invention has the benefit that (1) present invention is 1 × 4 photoswitch, that is, there are a lightwave entry end mouth and four
Lightwave exit end mouth is able to achieve four road gating functions of photoswitch, and the configuration of the present invention is simple, small volume are extensive to make
Array of photoswitch provides greater flexibility；(2) the excellent electro-optical characteristic of niobic acid lithium material is utilized, uses annealed proton in technique
Lithium niobate fiber waveguide is exchanged, manufacture craft is mature, and cost is smaller, has potential economy and application value, can lead in optic communication
It is widely used in domain.
Detailed description of the invention
Fig. 1 is the structural representation for increasing novel 1 × 4 lithium niobate waveguides photoswitch of Dare interference structure the present invention is based on Mach
Figure；
Fig. 2 is lithium niobate waveguides chip profile structural schematic diagram of the present invention；
Fig. 3 is novel 1 × 4 lithium niobate waveguides photoswitch, the four road gating for increasing Dare interference structure the present invention is based on Mach
Simulation results figure.
In figure: 1. input optical fibres, 2.U type groove optic fibre fixing device, 3. lithium niobate waveguides chips, 4. traveling wave electrodes, 5. light
Waveguide, 6.Y type waveguide beam splitter, 7. Waveguide interference arms, 8.3dB directional coupler, 9. central electrodes, 10. ground electrodes, 11.V type
Slot optic fibre fixing device, 12. output optical fibres, 13. lithium niobate base bottoms, 14. buffer layers, I, first order optical switch element, II, second
Grade optical switch element.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, however, the present invention is not limited thereto embodiment.
A kind of 1 × 4 lithium niobate waveguides optical switch construction schematic diagram increasing Dare interference structure based on Mach of the present embodiment
As shown in Figure 1.
The present embodiment includes the input optical fibre 1 being arranged successively along beam Propagation direction, U-type groove optic fibre fixing device 2, by one
The first order optical switch element I that a 1 × 2 MZI is constituted and the second level photoswitch list being made of two 1 × 2 parallel MZI
Member II, V-groove optic fibre fixing device 11, output optical fibre 12.In input optical fibre 1 and I butt coupling of first order optical switch element,
In view of input optical fibre only has one, therefore it is aligned using U-type groove；Output optical fibre is four optical fiber equidistantly arranged, using V
The alignment of type groove array.1 × 2 MZI include lithium niobate base bottom 13 as shown in Figure 2 and the buffer layer 14 for being formed in its surface,
Traveling wave electrode 4 and optical waveguide 5, the traveling wave electrode 4 include central electrode 9 and ground electrode 10, and optical waveguide 5 includes a Y type wave
Lead beam splitter 6, Waveguide interference arm 7,3dB directional coupler 8.The waveguide bends of Y type waveguide beam splitter and 3dB directional coupler
Divide the bending loss that can reduce waveguide using rised cosine curved.The light all the way inputted by input optical fibre 1 is through Y type waveguide
Beam splitter 6 is divided into two-way, respectively enters two interfere arm up and down of Waveguide interference arm 7, two-way light is under the action of traveling wave electrode 4
Phase difference is generated, to determine optical path can be realized in first order light from which output port interference output of directional coupler
Switching, that is, light switch function between I two output ports of switch unit.The two-way output of first order optical switch element I respectively enters
Two 1 × 2 MZI of second level optical switch element II, after second level optical switch element II, to entire light shutter device
Speech can realize the function of four roads gating.
Manufacture craft of the invention is simple, and Y biography type is cut using X in the lithium niobate base bottom 13, and the optical waveguide 5 is using annealing
Proton exchange lithium niobate single mode waveguide, the total length of 1 × 4 lithium niobate waveguides light shutter device is 3.7cm in this example.Y type wave
Lead beam splitter, up and down parallel Waveguide interference arm, 3dB directional coupler duct width be mutually all 6.5 μm.Using push-pull
Electrode structure, this structure can in two interfere arms of MZI photoswitch simultaneously powered up field, realize phase-modulation.Push-pull electricity
Pole structure can obtain smaller switching voltage compared to single armed modulation, improve the job stability of switching device, in this example
Thickness of electrode is 15 μm, and electrode width is 8 μm, and electrode spacing is 12 μm, guarantees that device has again to reduce the length of device
Interference arm lengths need to be rationally arranged in lower switching voltage, and interference arm lengths are 1cm in this example.The MZI light of the first order 1 × 2
In switch unit the coupling spacing of 3dB directional coupler be 10 μm, 261.5 μm of coupling length, second level 3dB directional coupler
Coupling spacing is 10 μm, and coupling length is set as 432.5 μm.In view of the light of output port is by optical fiber output, four in this example
A lithium niobate waveguides output port equidistantly arranges, and spacing is 127 μm.
Fig. 3 is novel 1 × 4 lithium niobate waveguides photoswitch, the four road gating for increasing Dare interference structure the present invention is based on Mach
Simulation results figure, for the input light of 1550nm wavelength, maximum extinction ratio can realize four Lu Xuan up to 48dB well
Logical function.
In conclusion the invention proposes novel 1 × 4 lithium niobate waveguides light for increasing Dare interference structure based on Mach to open
It closes, can realize that optical path in the arbitrary switch of four output ports, has potential economy and application value, is expected in light well
It is widely used in the communications field.
Claims (5)
1. a kind of 1 × 4 lithium niobate waveguides photoswitch for increasing Dare interference structure based on Mach, by input optical fibre all the way (1), niobic acid
Lithium waveguide chip (3), four road output optical fibres (12) are constituted, it is characterised in that: wherein lithium niobate waveguides chip (3) includes by one
The first order optical switch element (I) that 1 × 2 MZI is constituted and the second level photoswitch list being made of two 1 × 2 parallel MZI
First (II), described 1 × 2 MZI includes lithium niobate base bottom (13) and buffer layer (14), the traveling wave electrode for being formed in its surface
(4) it is made of with optical waveguide (5), the traveling wave electrode (4) the ground electrode (10) of central electrode (9) and its two sides, the light wave
It leads (5) and successively constitutes Y type waveguide beam splitter (6), up and down parallel Waveguide interference arm (7), 3dB directional coupler (8)；It is described
The light all the way that the Y type waveguide beam splitter (6) of 1 × 2 MZI in first order optical switch element (I) will be inputted by input optical fibre (1)
It is divided into two-way, respectively enters two arms up and down of Waveguide interference arm (7), the output end and 3dB of Waveguide interference arm (7) orient coupling
Clutch (8) connection, two-way generate phase under the action of the light of two arms up and down of Waveguide interference arm (7) is in traveling wave electrode (4)
Difference, when phase difference reaches pi/2, from output port interference output under 3dB directional coupler (8), when phase difference reaches-pi/2 when,
From output port interference output on 3dB directional coupler (8), optical path is just realized between two output ports of 1 × 2 MZI
Switching, i.e. two roads gating function；The Y type waveguide of two 1 × 2 MZI in the second level optical switch element (II) point
Beam device (6) is parallel with the output port of upper level 3dB directional coupler (8) to be connected, from upper level 3dB directional coupler (8)
The light of a certain output port output enters the Y type of a certain 1 × 2 MZI optical switch element in second level optical switch element (II)
In waveguide beam splitter (6), equally under the action of traveling wave electrode (4), from 3dB directional coupler (8) one of output port
Interference output；By controlling the traveling wave electrode (4) in three 1 × 2 MZI respectively, the function of four roads gating is just realized；
Four output ports are separately connected four road output optical fibres (12).
2. a kind of 1 × 4 lithium niobate waveguides photoswitch for increasing Dare interference structure based on Mach as described in claim 1, special
Sign is: the lithium niobate base bottom (13) cuts Y biography type using X.
3. a kind of 1 × 4 lithium niobate waveguides photoswitch for increasing Dare interference structure based on Mach as claimed in claim 1 or 2,
Be characterized in that: the Y type waveguide beam splitter (6), up and down parallel Waveguide interference arm (7), 3dB directional coupler (8) are all by light
Waveguide (5) is constituted, and the optical waveguide (5) is of same size, lithium niobate single mode waveguide is exchanged using annealed proton, through over cleaning substrate
Piece, prepare mask, photoetching, proton exchange, annealing, end face polishing, waveguide adjustment and checking step are made.
4. a kind of 1 × 4 lithium niobate waveguides photoswitch for increasing Dare interference structure based on Mach as claimed in claim 3, special
Sign is: the waveguide bend part of the Y type waveguide beam splitter (6) and 3dB directional coupler (8) is curved using rised cosine curve
It is bent.
5. a kind of 1 × 4 lithium niobate waveguides photoswitch for increasing Dare interference structure based on Mach as described in claim 1 or 4,
Be characterized in that: the input optical fibre (1) is aligned using U-type groove, and four road output optical fibre (12) is using the V-type equidistantly arranged
The alignment of slot array.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111290191A (en) * | 2020-02-19 | 2020-06-16 | 联合微电子中心有限责任公司 | Directional coupler and optical switch based on silicon nitride platform |
| CN111897173A (en) * | 2020-08-03 | 2020-11-06 | 浙江大学 | Low-loss low-random phase error 2 x 2 optical switch and N x N optical switch array |
| CN112130352A (en) * | 2020-09-28 | 2020-12-25 | 联合微电子中心有限责任公司 | Optical switch |
| CN113009637A (en) * | 2021-02-04 | 2021-06-22 | 中国科学院长春光学精密机械与物理研究所 | NXN type silicon-based waveguide optical switch based on tree-shaped branch |
| CN113238324A (en) * | 2021-04-30 | 2021-08-10 | 吉林大学 | Low-crosstalk optical switch with double MZ structures and optical switch array |
| CN113625392A (en) * | 2021-08-09 | 2021-11-09 | 吉林大学 | 4X 4 optical switch array based on organic-inorganic hybrid integration |
| CN114089551A (en) * | 2021-11-24 | 2022-02-25 | 上海安湃芯研科技有限公司 | Working point self-stabilizing type thin film lithium niobate Mach-Zehnder electro-optic modulator |
| CN114895502A (en) * | 2022-04-26 | 2022-08-12 | 东南大学 | Repetition frequency large-range adjustable silicon nitride micro-optical comb array based on optical switch switching network |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1157687A (en) * | 1994-09-14 | 1997-08-20 | 西门子公司 | Tree-structured optical 1XN and NXN switch matrices |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN104849878A (en) * | 2015-06-03 | 2015-08-19 | 东南大学 | Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof |
| CN109143621A (en) * | 2018-10-16 | 2019-01-04 | 中山大学 | Quadrature quadrature modulator and preparation method thereof based on LiNbO_3 film |
| US20190072833A1 (en) * | 2017-09-07 | 2019-03-07 | The George Washington University | All optical fast fourier transform on chip with heating tunability design, simulation, fabrication, and performance analysis |
-
2019
- 2019-06-25 CN CN201910551839.7A patent/CN110286540A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1157687A (en) * | 1994-09-14 | 1997-08-20 | 西门子公司 | Tree-structured optical 1XN and NXN switch matrices |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN104849878A (en) * | 2015-06-03 | 2015-08-19 | 东南大学 | Silicon nitride waveguide calorescence switch array chip based on Mach-Zahnder structure and production method thereof |
| US20190072833A1 (en) * | 2017-09-07 | 2019-03-07 | The George Washington University | All optical fast fourier transform on chip with heating tunability design, simulation, fabrication, and performance analysis |
| CN109143621A (en) * | 2018-10-16 | 2019-01-04 | 中山大学 | Quadrature quadrature modulator and preparation method thereof based on LiNbO_3 film |
Non-Patent Citations (2)
| Title |
|---|
| 孙光春等: "新型S形光波导低弯曲损耗路径设计", 《激光技术》 * |
| 张颖等: "余弦形波导弯曲损耗模型分析", 《激光与光电子学进展》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111290191A (en) * | 2020-02-19 | 2020-06-16 | 联合微电子中心有限责任公司 | Directional coupler and optical switch based on silicon nitride platform |
| CN111897173A (en) * | 2020-08-03 | 2020-11-06 | 浙江大学 | Low-loss low-random phase error 2 x 2 optical switch and N x N optical switch array |
| CN112130352A (en) * | 2020-09-28 | 2020-12-25 | 联合微电子中心有限责任公司 | Optical switch |
| CN113009637A (en) * | 2021-02-04 | 2021-06-22 | 中国科学院长春光学精密机械与物理研究所 | NXN type silicon-based waveguide optical switch based on tree-shaped branch |
| CN113238324A (en) * | 2021-04-30 | 2021-08-10 | 吉林大学 | Low-crosstalk optical switch with double MZ structures and optical switch array |
| CN113625392A (en) * | 2021-08-09 | 2021-11-09 | 吉林大学 | 4X 4 optical switch array based on organic-inorganic hybrid integration |
| CN113625392B (en) * | 2021-08-09 | 2022-08-12 | 吉林大学 | 4X 4 optical switch array based on organic-inorganic hybrid integration |
| CN114089551A (en) * | 2021-11-24 | 2022-02-25 | 上海安湃芯研科技有限公司 | Working point self-stabilizing type thin film lithium niobate Mach-Zehnder electro-optic modulator |
| CN114089551B (en) * | 2021-11-24 | 2024-03-12 | 上海安湃芯研科技有限公司 | Working point self-stabilization type thin film lithium niobate Mach-Zehnder electro-optic modulator |
| CN114895502A (en) * | 2022-04-26 | 2022-08-12 | 东南大学 | Repetition frequency large-range adjustable silicon nitride micro-optical comb array based on optical switch switching network |
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