CN111290191B - Directional coupler and optical switch based on silicon nitride platform - Google Patents
Directional coupler and optical switch based on silicon nitride platform Download PDFInfo
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- CN111290191B CN111290191B CN202010102717.2A CN202010102717A CN111290191B CN 111290191 B CN111290191 B CN 111290191B CN 202010102717 A CN202010102717 A CN 202010102717A CN 111290191 B CN111290191 B CN 111290191B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3132—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
- G02F1/3133—Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type the optical waveguides being made of semiconducting materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/31—Digital deflection, i.e. optical switching
- G02F1/313—Digital deflection, i.e. optical switching in an optical waveguide structure
- G02F1/3137—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
- G02F1/3138—Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions the optical waveguides being made of semiconducting materials
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a directional coupler and an optical switch based on a silicon nitride platform, wherein the directional coupler comprises a coupler body and at least two silicon nitride waveguides arranged on the coupler body, the coupler body comprises an adjustable waveguide formed by electro-optic materials and an electrode group for providing an electric field environment for the adjustable waveguide, and the at least two silicon nitride waveguides are arranged on the same side of the coupler body at intervals by the adjustable waveguide; the optical switch comprises at least one input waveguide, at least two output waveguides and a directional coupler, wherein the at least one input waveguide is connected with the input end of one silicon nitride waveguide, and each output waveguide is correspondingly connected with the output end of one silicon nitride waveguide. The directional coupler structure adopted by the optical switch based on the silicon nitride platform has the advantages of high switching speed, stable performance, small size, simple process and compatibility with the COMS process, and is beneficial to realizing a large-scale optical switch array.
Description
Technical Field
The invention relates to the field of optical communication and integrated optics, in particular to a directional coupler and an optical switch based on a silicon nitride platform.
Background
The basic function of an optical switch is to implement the function of switching an input optical signal to a different output port, the simplest optical switches being 1*2 and 2 x 2 optical switches, which are also the basic units of other more complex optical switch arrays. Optical switching technology, i.e. optical switching technology, is one of the core technologies in all-optical networks, and is widely used in optical transport networks, technologies based on various switching principles and implementing switching. In addition to this, in the field of integrated optics, there is a great need for optical path selection, and optical switches are key devices to achieve this function.
The key performance indexes of the optical switch are switching speed, insertion loss and extinction ratio among ports, and the basic principle of the conventional thermo-optic effect optical switch is based on a Mach-Zehnder interferometer, MZI, wherein a thermo-optic based phase shifter is arranged in one or two arms of the MZI, and directional couplers or multimode interference couplers (Multimode interference coupler) are arranged at two ends of the MZI, so that a beam splitter and a beam combiner are formed by MMIs. The optical switch technology has the advantages of integration, simple process, high stability, high extinction ratio and the like, is widely used in the field of integrated optics, but the phase shift change generated by the thermo-optic effect is relatively slow, is sensitive to the temperature of a device, and can only be suitable for application scenes of low-speed optical switches. In addition, the optical switch based on the MZI structure needs to generate half-wavelength phase shift, so that a waveguide arm for modulating the phase shift is long, the whole device structure is large, and the occupied area is large when the large-scale optical switch is integrated.
In addition to thermo-optic modulation, common optical switching techniques include MEMS mechanical optical switches and carrier dispersion effect optical switches. The MEMS mechanical optical switch mainly comprises a miniature movable reflecting mirror manufactured on a silicon substrate, wherein the size of the miniature movable reflecting mirror is hundreds of micrometers to millimeters, and finally, a large number of reflecting mirrors are integrally packaged on a single silicon wafer to realize an optical switch array; these mirrors are usually regulated by electromagnetic, electrostatic, piezoelectric, etc., but such modulation has the disadvantages of large loss, slow modulation, poor stability, limited deflection range of the output port, etc. Whereas optical switches based on carrier dispersion effects have the disadvantage of large insertion loss.
In recent years, since the optical waveguide implemented on the silicon nitride platform has significant advantages of small transmission loss, low process requirements, etc., a large number of integrated systems based on silicon nitride have been studied, but the silicon nitride platform only has outstanding performances in terms of passive devices, but the advantages in terms of active devices are not obvious, such as optical switching devices. At present, a thermo-optical effect optical switch based on a silicon nitride platform is realized, but has the defect of extremely low bandwidth. Therefore, the bottleneck of the silicon nitride high-speed optical switch is a main factor limiting the application of the silicon nitride integration process in the high-speed optical device, in order to solve the problem, chips of different process platforms are integrated together in an end-face coupling mode by adopting an end-face butt joint mode, for example, a high-speed active device and a low-loss silicon nitride passive device are coupled in an end-face alignment mode, so that the complementary effect of the process advantages of the two platforms is realized, but the process is troublesome, the brought insertion loss is relatively large, and the large-scale integration is not facilitated, and particularly, the optical switch array with relatively sensitive insertion loss is realized.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a directional coupler and an optical switch based on a silicon nitride platform, which are used for solving the problems of low modulation speed, large size, large insertion loss, poor stability and inapplicability to large-scale integration of the conventional optical switch.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a directional coupler comprising a coupler body and at least two silicon nitride waveguides disposed on the coupler body, the coupler body comprising an adjustable waveguide of electro-optic material and an electrode set providing an electric field environment for the adjustable waveguide, the at least two silicon nitride waveguides being disposed on the same side of the coupler body at intervals by the adjustable waveguide.
On the other hand, the invention also provides an optical switch based on the silicon nitride platform, which comprises the directional coupler, at least one input waveguide and at least two output waveguides, wherein the at least one input waveguide is connected with the input end of one silicon nitride waveguide, and each output waveguide is correspondingly connected with the output end of one silicon nitride waveguide.
The working principle of the invention is as follows: by changing the bias voltage between the electrode groups of the directional coupler so as to change the effective refractive index of the adjustable waveguide formed by the electro-optic material, according to the principle of directional coupling, after an optical signal input from a first input waveguide enters the directional coupler through a first silicon nitride waveguide connected with the first input waveguide, when the effective refractive index of the first silicon nitride waveguide is matched with that of the adjustable waveguide, light in the first silicon nitride waveguide can be completely coupled into the adjustable waveguide, then coupled into a second silicon nitride waveguide connected with a second output waveguide through the adjustable waveguide, and then light is output from the second output waveguide, so that the function of transmitting light from the first input waveguide to the second output waveguide is realized; if the voltage between the electrode groups is properly changed, the effective refractive index of the adjustable waveguide is changed, so that the effective refractive index matching between the first silicon nitride waveguide and the adjustable waveguide is not satisfied, then the light in the first silicon nitride waveguide cannot be coupled into the adjustable waveguide, and cannot be coupled into the second silicon nitride waveguide, at the moment, the light only continues to be transmitted along the first silicon nitride waveguide and is output from the first output waveguide connected with the first silicon nitride waveguide, and the function of transmitting the light from the first input waveguide to the first output waveguide is realized. Based on the principle, the invention realizes an integrated 1*2 high-speed optical switch function and can be expanded into an optical switch array of 2 x 2 or N x M.
Compared with the prior art, the invention has the following beneficial effects:
1. the directional coupler provided by the invention has the advantages of high speed, small device size, low energy consumption, good stability and compatibility with a COMS (complementary metal oxide semiconductor) process by utilizing the electro-optical effect of the material, and is beneficial to realizing a large-scale high-speed optical switch array.
2. The optical switch based on the silicon nitride platform realizes the integration of the passive optical waveguide device of the silicon nitride platform and the electro-optic effect waveguide, avoids the alignment coupling problem between different platform chips, reduces the insertion loss of the optical switch and is beneficial to large-scale integration application.
Drawings
FIG. 1 is a schematic diagram of an overall structure of an optical switch according to an embodiment of the present invention;
FIG. 2 is a schematic top view of an optical switch according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a directional coupler according to one embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a directional coupler according to another embodiment of the present invention.
In the figure: 1. a first input waveguide; 2. a second input waveguide; 3. a first output waveguide; 4. a second output waveguide; 5. an adjustable waveguide; 51. a narrow ridge; 52. a wide ridge; 6. an isolation layer; 7. a first electrode; 8. a second electrode; 9. a first silicon nitride waveguide; 10. and a second silicon nitride waveguide.
Detailed Description
The invention is described in further detail below with reference to the drawings in the specification and the detailed description is given.
Referring to fig. 1 to 3, according to an embodiment of the present invention, a directional coupler includes a coupler body including an adjustable waveguide 5 composed of an electro-optic material and first and second electrodes 7 and 8 providing an electric field environment for the adjustable waveguide 5, and first and second silicon nitride waveguides 9 and 10 are disposed at the same side of the coupler body by the adjustable waveguide 5 at intervals, and first and second silicon nitride waveguides 9 and 10 are disposed at the lower surface of the coupler body. Notably, the tunable waveguide 5 has a characteristic that its refractive index changes with a change in an electric field applied thereto due to the particularity of the electro-optic material.
According to another embodiment of the present invention, the coupler body further includes an isolation layer 6, the isolation layer 6 is disposed between the tunable waveguide 5 and the first electrode 7 and the second electrode 8, the isolation layer 6 is silica or other cladding material with a certain thickness and low refractive index, and the isolation layer 6 is disposed to avoid absorption loss of the optical signals in the waveguide by the first electrode 7 and the second electrode 8.
According to another embodiment of the invention, the electro-optic material constituting the tunable waveguide 5 is a lithium niobate material or other high-speed electro-optic material.
According to another embodiment of the present invention, the tunable waveguide 5 is an inverted ridge waveguide, and includes a wide ridge 52 and a narrow ridge 51, and the narrow ridge 51 is disposed on the same side as the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10 and is spaced apart from the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10.
According to another embodiment of the present invention, a certain coupling distance is provided between the narrow ridge 51 and the first silicon nitride waveguide 9, a certain coupling distance is also provided between the narrow ridge 51 and the second silicon nitride waveguide 10, and air, silicon dioxide or other low refractive index materials are provided between the narrow ridge 51 and the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10; the narrow ridge 51 is separated from the first electrode 7 and the second electrode 8 by a wide ridge 52, or the narrow ridge 51 is separated from the first electrode 7 and the second electrode 8 by a wide ridge 52 and the isolating layer 6.
Referring to fig. 4, according to another embodiment of the present invention, the tunable waveguide 5 is a rectangular waveguide without the wide ridge 52 and with only the narrow ridge 51, and the rectangular waveguide is disposed on the same side of the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10 with the isolation layer 6 as a support and is spaced apart from the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10.
According to another embodiment of the present invention, air, silicon dioxide or other low refractive index materials are between the rectangular waveguide and the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10; the rectangular waveguide is interposed between the first electrode 7 and the second electrode 8 at a position below the first electrode 7 and the second electrode 8 and is separated from the first electrode 7 and the second electrode 8 by an isolation layer 6.
According to another embodiment of the present invention, the longitudinal cross-sectional shape of the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10 may be rectangular, ridge-shaped or other shapes.
According to another embodiment of the invention, the first electrode 7, the second electrode 8 are gold, silver, titanium or other conductive metal material.
Referring to fig. 1-4, the present invention further provides an optical switch based on a silicon nitride platform, which includes the directional coupler, the first input waveguide 1, the second input waveguide 2, the first output waveguide 3 and the second output waveguide 4, wherein two ends of the first silicon nitride waveguide 9 are respectively connected with the first input waveguide 1 and the first output waveguide 3, and two ends of the second silicon nitride waveguide 10 are respectively connected with the second input waveguide 2 and the second output waveguide 4.
The first input waveguide 1, the second input waveguide 2, the first output waveguide 3 and the second output waveguide 4 all comprise a bending section and a straight section, the first input waveguide 1 and the first output waveguide 3 are respectively connected with the input end and the output end of the first silicon nitride waveguide 9 through respective bending sections, and the second input waveguide 2 and the second output waveguide 4 are respectively connected with the input end and the output end of the second silicon nitride waveguide 10 through respective bending sections; the first input waveguide 1, the second input waveguide 2, the first output waveguide 3 and the second output waveguide 4 are respectively connected with an external optical path through corresponding straight sections.
According to one embodiment of the present invention, the silicon nitride material used for the first silicon nitride waveguide 9 and the second silicon nitride waveguide 10 has a refractive index similar to that of the lithium niobate material used for the tunable waveguide 5. When a voltage is applied to the first electrode 7 and the second electrode 8, an electric field is formed between the first electrode 7 and the second electrode 8, part of the electric field overlaps with the region of the adjustable waveguide 5, the effective refractive index of the adjustable waveguide 5 is changed by changing the bias voltage between the first electrode 7 and the second electrode 8, according to the principle of directional coupling, when the effective refractive index of the first silicon nitride waveguide 9 is matched with that of the adjustable waveguide 5, an optical signal transmitted from the first input waveguide 1 to the first silicon nitride waveguide 9 can be completely coupled into the adjustable waveguide 5, then coupled into the second silicon nitride waveguide 10 through the adjustable waveguide 5 and then output from the second output waveguide 4, so that the function of transmitting the optical signal from the first input waveguide 1 to the second output waveguide 4 is realized; when the effective refractive index matching between the first silicon nitride waveguide 9 and the tunable waveguide 5 is not satisfied, the optical signal in the first silicon nitride waveguide 9 cannot be coupled into the tunable waveguide 5, and thus cannot be coupled into the second silicon nitride waveguide 10, and at this time, the optical signal can continue to be transmitted to the first output waveguide 3 along the first silicon nitride waveguide 9, thereby realizing the function of transmitting the optical signal from the first input waveguide 1 to the first output waveguide 3. The same principle is that when the second silicon nitride waveguide 10 is matched to the effective refractive index of the tunable waveguide 5, the optical signal transmitted from the second input waveguide 2 will be output from the first output waveguide 3; when the effective refractive index matching between the second silicon nitride waveguide 10 and the tunable waveguide 5 is not satisfied, a function of transmitting an optical signal from the second input waveguide 2 to the second output waveguide 4 is realized. Thus, this embodiment realizes an integrated 2 x 2 high speed optical switch. It should be noted that, when there are only one or more input waveguides and multiple output waveguides, those skilled in the art can design multiple silicon nitride waveguides and the number of adjustable waveguides 5 and electrodes with corresponding structures by applying the concepts of the present invention, an integrated n×m optical switch array can be implemented, where the number of input ports N and output ports M of the optical switch may be equal or unequal, and the number of ports M is at least two.
The optical switch based on the silicon nitride platform constructed by the directional coupler utilizes the strong electro-optic effect of the lithium niobate material, and has the advantages of higher speed, small energy consumption and insensitivity to temperature compared with a thermo-optic effect optical switch; compared with an MEMS optical switch, the MEMS optical switch has the advantages of simpler process, better COMS compatibility and more stable performance; compared with an optical switch based on an MZI, the optical switch adopts the principle of directional coupling, has obviously reduced device size, and is beneficial to realizing a large-scale optical switch array. In addition, the invention realizes the integration of the silicon nitride platform passive optical waveguide device and the lithium niobate waveguide, avoids the alignment coupling problem between different platform chips, reduces the insertion loss of the optical switch, and is beneficial to large-scale integration application.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention.
Claims (10)
1. The directional coupler is characterized by comprising a coupler body and at least two silicon nitride waveguides arranged on the coupler body, wherein the coupler body comprises an adjustable waveguide formed by an electro-optic material and an electrode group for providing an electric field environment for the adjustable waveguide, the at least two silicon nitride waveguides are arranged on the same side of the coupler body at intervals by the adjustable waveguide, and the adjustable waveguide comprises a narrow ridge waveguide or a rectangular waveguide which is arranged on the same side of the silicon nitride waveguide and is distributed with the silicon nitride waveguide at intervals.
2. The directional coupler of claim 1, wherein the coupler body further comprises an isolation layer disposed between the tunable waveguide and the electrode set.
3. A directional coupler according to claim 2, wherein the electro-optic material comprising the tunable waveguide comprises a lithium niobate material.
4. A directional coupler according to claim 1, 2 or 3, wherein the tunable waveguide is an inverted ridge waveguide and comprises a wide ridge and a narrow ridge, the narrow ridge being disposed on the same side of and spaced apart from the silicon nitride waveguide.
5. A directional coupler according to claim 4, wherein air or silicon dioxide is between the narrow ridge and any silicon nitride waveguide.
6. A directional coupler according to claim 2 or 3, wherein the tunable waveguide is a rectangular waveguide, and the rectangular waveguide is disposed on the same side of the silicon nitride waveguide with the isolation layer as a support and is spaced apart from the silicon nitride waveguide.
7. A directional coupler according to claim 6, wherein air or silicon dioxide is between the rectangular waveguide and any silicon nitride waveguide.
8. A directional coupler according to claim 1, wherein the silicon nitride waveguide is a rectangular waveguide or a ridge waveguide.
9. A directional coupler according to claim 1, wherein the electrode set comprises at least two electrodes, the electrode set comprising one or a combination of gold, silver, titanium.
10. An optical switch based on a silicon nitride platform, comprising at least one input waveguide and at least two output waveguides, characterized in that it further comprises a directional coupler according to any of claims 1-9, said at least one input waveguide being connected to an input end of one silicon nitride waveguide, each of said output waveguides being correspondingly connected to an output end of one silicon nitride waveguide.
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| CN202010102717.2A CN111290191B (en) | 2020-02-19 | 2020-02-19 | Directional coupler and optical switch based on silicon nitride platform |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112130352A (en) * | 2020-09-28 | 2020-12-25 | 联合微电子中心有限责任公司 | Optical switch |
| CN114647034B (en) * | 2020-12-18 | 2023-03-24 | 联合微电子中心有限责任公司 | Optical switch, optical network and optical chip |
| CN112904483B (en) * | 2021-01-18 | 2022-11-04 | 联合微电子中心有限责任公司 | Optical waveguide directional coupler and forming method thereof, optical network and control method thereof |
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