CN109738987B - Silicon-based 4-channel wavelength division multiplexing and demultiplexing hybrid integrated chip - Google Patents
Silicon-based 4-channel wavelength division multiplexing and demultiplexing hybrid integrated chip Download PDFInfo
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Abstract
The invention discloses a silicon-based 4-channel wavelength division multiplexing and demultiplexing hybrid integrated chip. The invention relates to a silicon-based 4-channel wavelength division multiplexing demultiplexing hybrid integrated chip, which comprises: a planar lightwave circuit substrate; a transmitting end assembly disposed on the planar lightwave circuit substrate, the transmitting end assembly comprising: four lasers emitting light of four different wavelengths; the four emission ends 95/5 optical splitters, the four emission ends 95/5 optical splitters respectively split the light emitted by the four lasers into 95% power emission end first path light and 5% power emission end second path light; and the four transmitting end monitoring photodiodes receive the transmitting end second path light emitted by the four lasers respectively. The invention has the beneficial effects that: the silicon-based planar optical Path (PLC) is highly integrated, so that an integrated chip integrating an optical path transmitting end and a receiving end is realized, and the optical module packaging process flow is simplified.
Description
Technical Field
The invention relates to the field of silicon photons, in particular to a silicon-based 4-channel wavelength division multiplexing and demultiplexing hybrid integrated chip.
Background
The silicon photonic technology is a great heat in the whole optical communication industry at present, is a widely regarded solution for next-generation optical communication module chips, mainly solves the bottleneck of high-speed modulation of the traditional laser, and is known as a solution for next-generation single-channel 100G and above communication schemes; the silicon photon technology is compatible with the CMOS technology, and a series of optical elements such as a light source, a modulator, a detector, a wave combining/splitting device, a waveguide and the like are integrated on a single silicon-based substrate, so that the raw material production cost of a photon chip and the packaging and testing cost of an optical module are greatly reduced. The silicon photonic technology can greatly improve the integration level of devices, reduce power consumption and simultaneously improve the bandwidth of signal transmission, and particularly has more advantages than the traditional scheme in a multi-channel optical system.
At present, the scheme for realizing the CWDM4 in the industry is mainly divided into two major marketing groups; the first major array is a mode of realizing wavelength division multiplexing and demultiplexing for the traditional free space optical lens. But also mainly comprises 3 main schemes; the first scheme is as shown in fig. 1, a schematic diagram of a traditional AWG free space wave-combining scheme, mainly integrates light into a light path in a most traditional way by means of geometric optics from a collimated light path, and the wave-combining form includes an AWG chip, a coated waveguide, and an array grating;
the second scheme adopts a schematic diagram of a TO38 coaxial beam splitter multiplexing and demultiplexing scheme, as shown in FIG. 2; coupling is realized by adjusting the angle of the light splitting piece;
the third scheme adopts TO38 coaxial external MUX and DEMUX scheme, and is different from the second scheme in that TO38 is directly focused and coupled TO optical fiber, and the optical fiber realizes the purpose of multiplexing and demultiplexing in the MUX and DEMUX of AWG; as shown in fig. 3;
the second large array adopts a PLC silicon-optical hybrid integration scheme; currently, a PSM4 scheme (ParallelSingle Mode 4 lanes) is realized, as shown in a schematic diagram of a silicon optical PSM4 hybrid integration scheme in FIG. 4; however, the CWDM4 (4-channel coarse wavelength division multiplexing) still adopts the traditional method of free space coherent optical multiplexing to compress the optical signal into the silicon waveguide; and the silicon waveguide adopts a scheme of 220 nm;
the traditional technology has the following technical problems:
the mode that the traditional free space optical lens used by the CWDM4 realizes wavelength division multiplexing and demultiplexing has the problems of complex process, low yield, high cost and high coupling efficiency due to small optical path insertion loss; the second scheme adopts the TO38 coaxial light-splitting sheet multiplexing and demultiplexing scheme, the index requirements on the light-splitting sheet are higher, the process is relatively complex, the cost and the yield are higher than those of the first scheme, and the patent problem of the first scheme is mainly solved; the third TO38 coaxial external MUX and DEMUX scheme is cheaper in cost in the traditional scheme, but the problems of large occupied space and poor reliability cause a yield bottleneck; the cost of the PLC silicon light PSM4 hybrid integration scheme to the optical wiring network is relatively high.
Disclosure of Invention
The invention provides a silicon-based 4-channel wavelength division multiplexing demultiplexing hybrid integrated chip, which combines the application of a COMS process on an SOI substrate, and hybrid integration of a germanium-silicon detector, an MZI (Mach-Zehnder interferometer), a DEMUX (digital demultiplexer) and a beam splitter in a CWDM (wavelength division multiplexing) AWG, and the invention also solves the problem that the temperature characteristic of the AWG is required to be solved. The wavelength of the AWG chip with silicon dioxide on silicon substrate can drift to the long wave direction along with the temperature rise (the comprehensive result of thermal expansion and cold contraction and the change of refractive index), and the wavelength is increased by 11pm when the temperature rises by 1 ℃. Accordingly, there is also an index of Temperature Dependent Loss (TDL): the ITU passband is fixed, the wavelength (spectral curve) shifts with temperature, and the insertion loss in the ITU passband varies at each temperature point. Therefore, the chip is finally used on a TEC chip, and the chip works under the condition of constant temperature through the control of the TEC, so that stable wavelength, insertion loss and the like are achieved; the difficulty and the working procedure of the chip manufacturing process are reduced by adopting the integrated germanium-silicon detector, so that the chip manufacturing cost is reduced; the hybrid integration scheme is used, so that the number of discrete lens elements on the optical pulse link is greatly reduced, the packaging process of an optical module device is simplified, the manufacturing yield is greatly improved, and the cost is greatly reduced in a large scale.
In order to solve the above technical problem, the present invention provides a silicon-based 4-channel wdm-demux hybrid integrated chip, which comprises:
a planar lightwave circuit substrate;
a transmitting end assembly disposed on the planar lightwave circuit substrate, the transmitting end assembly comprising:
four lasers emitting light of four different wavelengths;
the four emission ends 95/5 optical splitters, the four emission ends 95/5 optical splitters respectively split the light emitted by the four lasers into 95% power emission end first path light and 5% power emission end second path light;
the four transmitting end monitoring photodiodes receive the transmitting end second light emitted by the four lasers respectively;
the two first-stage beam combiners combine the first path of light of the transmitting end emitted by the four beams of lasers into two beams of light; and
the second-stage beam combiner combines the two beams of light finally combined by the two first-stage beam combiners again; and
a receiving end assembly disposed on the planar lightwave circuit substrate, the receiving end assembly comprising:
a receiving end 95/5 optical splitter, where the receiving end 95/5 optical splitter splits light received by the receiving end component into a first receiving end path light occupying 95% of power and a second receiving end path light occupying 5% of power;
the receiving end monitoring photodiode receives the second path of light of the receiving end;
the wavelength division demultiplexer receives the first path of light of the receiving end; and
and the four photodiodes receive the four beams of light emitted by the wavelength division demultiplexer respectively.
The invention has the beneficial effects that:
the silicon-based planar optical Path (PLC) is highly integrated, so that an integrated chip integrating an optical path transmitting end and a receiving end is realized, and the optical module packaging process flow is simplified;
the hybrid integration scheme does not have an external optical lens, so that the batch performance is improved, and the curing times of the epoxy silver adhesive are reduced; the requirement on the precision of the chip mounter is reduced;
the integration of silicon-based PLC of the germanium-silicon detector reduces the cost and the process by using the COMS process; the reliability of the product is improved;
a Direct Modulation Laser (DML) flip-chip bonding technology is adopted; the method is used for realizing coupling of the ridge waveguide of the DFB laser and the SOI silicon-based plane optical Path (PLC), and realizing low-insertion-loss bonding under the limitation of a scattering angle and the numerical aperture NA of the optical waveguide; and the application of 3 μm thick silicon waveguides;
the application of the germanium-silicon detector PD and the monitoring detector MPD realizes the fusion of the COMS process of the highly integrated and silicon-based planar optical path PLC, improves the mass production type, effectively simplifies the process and reduces the cost;
the cross 95/5 optical splitter is used to provide an interface for realizing closed-loop control on the circuit, so as to achieve accurate control of the constant optical power output of the final optical module product;
the application of the cascade Mach-Zehnder interferometer MZI beam combiner solves the problem of modulation of different wavelength phases;
the integration of the AWG DEMUX in the COMS process of the silicon-based planar optical path PLC improves the mass production type, effectively simplifies the process and reduces the cost;
the application of the structure of the coupling V-shaped groove on the chip is shown in FIG. 9, so that the problems of mass production cost and yield are solved;
the application of the planar optical circuit (PLC) hybrid integration technology of the SOI silicon-based optical transceiver integrated chip.
In one embodiment, the laser is a distributed feedback laser.
In one embodiment, the laser is mounted on the planar lightwave circuit substrate by flip-chip bonding.
In one embodiment, the first stage combiner is implemented by a mach-zehnder interferometer.
In one embodiment, the second stage combiner is implemented by a mach-zehnder interferometer.
In one embodiment, the method further comprises the following steps: and the semiconductor refrigeration chip is arranged on the plane optical wave light path substrate.
In one embodiment, the planar lightwave circuit substrate is provided with a plurality of cross target points.
Drawings
Fig. 1 is a schematic diagram of a conventional AWG free space multiplexing scheme in the background of the present invention.
Fig. 2 is a schematic diagram of TO38 coaxial splitter multiplexing and demultiplexing scheme in the background of the invention.
Fig. 3 is a schematic diagram of TO38 coaxial external MUX and DEMUX schemes in the background of the invention.
Fig. 4 is a schematic diagram of a hybrid integration scheme of a silicon light PSM4 in the background of the invention.
Fig. 5 is a schematic structural diagram of a silicon-based 4-channel wdm-demux hybrid integrated chip according to the present invention.
FIG. 6 is a schematic diagram of laser flip-chip Au-Sn soldering in a silicon-based 4-channel WDM-WDM hybrid integrated chip according to the present invention.
Fig. 7 is a cross structure diagram of MPD waveguides of a monitoring detector at a transmitting end in a silicon-based 4-channel wdm-demux hybrid integrated chip according to the present invention.
Fig. 8 is a cross structure diagram of MPD waveguides of a monitoring detector at a transmitting end in a silicon-based 4-channel wdm-demux hybrid integrated chip according to the present invention.
Fig. 9 is a structural diagram of a process cross target point and a coupling V-shaped groove in the silicon-based 4-channel wdm-demux hybrid integrated chip according to the present invention (the structures of the transceiver sections are the same).
Fig. 10 is a schematic diagram of a receiving end structure and an AWGDEMUX structure in a silicon-based 4-channel wdm-demux hybrid ic chip according to the present invention.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
A silicon-based 4-channel wdm-demux hybrid integrated chip comprising:
a planar lightwave circuit substrate;
a transmitting end assembly disposed on the planar lightwave circuit substrate, the transmitting end assembly comprising:
four lasers emitting light of four different wavelengths;
the four emission ends 95/5 optical splitters, the four emission ends 95/5 optical splitters respectively split the light emitted by the four lasers into 95% power emission end first path light and 5% power emission end second path light;
the four transmitting end monitoring photodiodes receive the transmitting end second light emitted by the four lasers respectively;
the two first-stage beam combiners combine the first path of light of the transmitting end emitted by the four beams of lasers into two beams of light; and
the second-stage beam combiner combines the two beams of light finally combined by the two first-stage beam combiners again; and
a receiving end assembly disposed on the planar lightwave circuit substrate, the receiving end assembly comprising:
a receiving end 95/5 optical splitter, where the receiving end 95/5 optical splitter splits light received by the receiving end component into a first receiving end path light occupying 95% of power and a second receiving end path light occupying 5% of power;
the receiving end monitoring photodiode receives the second path of light of the receiving end;
the wavelength division demultiplexer receives the first path of light of the receiving end; and
and the four photodiodes receive the four beams of light emitted by the wavelength division demultiplexer respectively.
The invention has the beneficial effects that:
the silicon-based planar optical Path (PLC) is highly integrated, so that an integrated chip integrating an optical path transmitting end and a receiving end is realized, and the optical module packaging process flow is simplified;
the hybrid integration scheme does not have an external optical lens, so that the batch performance is improved, and the curing times of the epoxy silver adhesive are reduced; the requirement on the precision of the chip mounter is reduced;
the integration of silicon-based PLC of the germanium-silicon detector reduces the cost and the process by using the COMS process; the reliability of the product is improved;
a Direct Modulation Laser (DML) flip-chip bonding technology is adopted; the method is used for realizing coupling of the ridge waveguide of the DFB laser and the SOI silicon-based plane optical Path (PLC), and realizing low-insertion-loss bonding under the limitation of a scattering angle and the numerical aperture NA of the optical waveguide; and the application of 3 μm thick silicon waveguides;
the application of the germanium-silicon detector PD and the monitoring detector MPD realizes the fusion of the COMS process of the highly integrated and silicon-based planar optical path PLC, improves the mass production type, effectively simplifies the process and reduces the cost;
the cross 95/5 optical splitter is used to provide an interface for realizing closed-loop control on the circuit, so as to achieve accurate control of the constant optical power output of the final optical module product;
the application of the cascade Mach-Zehnder interferometer MZI beam combiner solves the problem of modulation of different wavelength phases;
the integration of the AWG DEMUX in the COMS process of the silicon-based planar optical path PLC improves the mass production type, effectively simplifies the process and reduces the cost;
the application of the structure of the coupling V-shaped groove on the chip is shown in FIG. 9, so that the problems of mass production cost and yield are solved;
the application of the planar optical circuit (PLC) hybrid integration technology of the SOI silicon-based optical transceiver integrated chip.
A specific application scenario of the present invention is described below:
the invention belongs to a CWDM4 hybrid integration scheme based on an SOI silicon-based PLC (planar Light wave Circuit) substrate; the CWDM4 chip operates at four wavelengths 1271/1291/1311/1331nm and a passband + -6.5 nm as specified by IEEE802.3clause 87.6(ITU-T G.694.2). Can be used for 40GE-LR4 and 100GE-CWDM4/CLR4 optical modules. As shown in fig. 5, a structure diagram of a CWDM4 silicon optical hybrid integrated transceiver chip; all devices are integrated on an SOI silicon-based substrate; mainly comprises two major parts; the first part of transmitting end chip; a. four DFB laser chips with different wavelengths; b. a transmitting end optical splitter; c. an emitter germanium-silicon Monitoring Photodiode (MPD), which may be made of a germanium-silicon material; (ii) a d. A combiner with cascade; e. a technological cross target point; f. a transmitting end V-shaped groove; g. particularly, the main optical path waveguide adopts a 3-micron thick silicon process; a second part of receiving end chip; (1) a photodiode, which may be made of a silicon germanium material; (2) a wavelength division Demultiplexer (DEMUX); (3) MPD for coupling of a receiving section is mainly used for coupling and insertion loss of a process test waveguide; (4) the receiving end is coupled with the V-shaped groove;
the main structure and process are explained as follows:
5.1 the main process of the DFB laser chip with four wavelengths is to adopt flip bonding, as shown in FIG. 6, a method of flip gold tin soldering DFB on PLC; a structure and a method for flip-chip bonding a laser to a Planar Lightwave Circuit (PLC) substrate (note: PLC is a general name of the silicon-based semi-finished chip of the patent); the method is characterized in that a laser is improved to enable P/N poles of the laser to be coplanar, flip-chip bonding is facilitated, a positioning stop platform structure is respectively arranged on the laser and a PLC substrate of a planar optical waveguide circuit, and the precision of the eutectic machine is required to be +/-0.5 mu m by the process. Such equipment and processes have been mature and are not described.
5.2 germanium-silicon (GeSi) monitoring detector and 95/5 optical splitter, silicon-based Photoelectric Detector (PD) is easy to integrate photoelectricity because of its cheap price and compatible with CMOS process, it becomes the research of home and abroad optoelectronics field and produces in volume step by step; research on silicon germanium PINs began abroad by 2009. By 2011, a small-size (1.3 mu m by 4 mu m) COMS process compatible waveguide structure germanium-silicon detector is manufactured by a national laboratory of Sondiya, and the detector achieves the ultra-low dark current of 3nA and the responsivity of 0.8A/W and has the bandwidth of 45 GHz; both the germanium-silicon MPD and the germanium-silicon detector at the receiving end have enough technical support; as shown in fig. 7, there are 4 MPDs at the transmitting end that form the waveguide cross; due to the principle of low loss (the loss of each cross is about 0.1 dB), the MPDs of the 4 monitoring detectors are effectively put together, so that the arrangement of the array TIA trans-impedance amplifiers is convenient during the subsequent optical device packaging.
5.3 cascading Mach-Zehnder interferometer MZI beam combiner, as shown in FIG. 8; the transmitting end adopts a cascade MZI combiner to realize the wave combination of different wavelengths, and the realization mode of a single MZI is mainly three: a. realizing asymmetric arm length; b. the arm is doped to change the refractive index and adjust the phase; c. the single-arm injection circuit mode is realized; because the silicon substrate and the MZI are sensitive to the temperature, the scheme is explained again that the TEC refrigerator is adopted to control the temperature to ensure the work in the constant temperature environment;
5.4 the structure of the cross target point and the V-shaped groove, as shown in FIG. 9; the process cross target point is mainly used for the position of a reference point of a chip manufacturing process, and is required to be simultaneously performed with waveguide etching so as to ensure the overall precision, particularly for flip-chip welding of a DFB laser chip; the actual structure is that the cross-shaped etching depth is 10 +/-3 mu m, the outline is clear, and the method is used for rapidly identifying a chip flow sheet or a CCD of welding equipment; the optical end face clearance groove mainly solves the problems that if a bare optical fiber end face machining process adopts laser cutting, a mushroom head can not be placed in a V-shaped groove and cannot realize coaxiality with an optical end face light spot, and batch large-scale production is facilitated; the structure of the V-shaped groove is mainly that the size of an inscribed circle is the maximum outline size of the bare fiber with the size of 125 +/-0.3 mu m; the minimum coupling insertion loss is achieved to improve the coupling efficiency; the structure is consistent at the transmitting end and the receiving end of the whole chip.
5.5, the whole structure of the receiving end is described, wherein the cross target point and the section on the coupling V-shaped groove are already described; an 95/5 optical splitter is also adopted in MPD of a receiving end, the monitoring detector and the transmitting end are the same, and the PD adopting germanium silicon aims at integration of COMS silicon base, so that the manufacturing process is simplified and the chip cost is reduced; the proposal uses a device manufactured by AWG DEMUX in a planar optical Path (PLC) technology; as shown in fig. 10; the working principle mainly adopts the structure and principle of a concave reflective grating and a Rowland circle; therefore, the structure is widely applied and is not explained; the high-frequency germanium-silicon detector is already described in section 5.2, and the monitoring detector adopts the same process and only has difference in parameters;
the above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (7)
1. A silicon-based 4-channel WDM hybrid integrated chip, comprising:
a planar lightwave circuit substrate;
a transmitting end assembly disposed on the planar lightwave circuit substrate, the transmitting end assembly comprising:
four lasers emitting light of four different wavelengths;
the four emission ends 95/5 optical splitters, the four emission ends 95/5 optical splitters respectively split the light emitted by the four lasers into 95% power emission end first path light and 5% power emission end second path light;
the four transmitting end germanium-silicon monitoring photodiodes receive the transmitting end second light emitted by the four lasers respectively;
the two first-stage beam combiners combine the first path of light of the transmitting end emitted by the four beams of lasers into two beams of light; and
the second-stage beam combiner combines the two beams of light finally combined by the two first-stage beam combiners again; and
a receiving end assembly disposed on the planar lightwave circuit substrate, the receiving end assembly comprising:
a receiving end 95/5 optical splitter, where the receiving end 95/5 optical splitter splits light received by the receiving end component into a first receiving end path light occupying 95% of power and a second receiving end path light occupying 5% of power;
the receiving end germanium-silicon monitoring photodiode receives the second path of light of the receiving end;
the wavelength division demultiplexer receives the first path of light of the receiving end; and
and the four photodiodes receive the four beams of light emitted by the wavelength division demultiplexer respectively.
2. The silicon-based 4-channel wdm-demux hybrid ic of claim 1 wherein the laser is a distributed feedback laser.
3. The silicon-based 4-channel wdm-demux hybrid ic of claim 1 wherein the laser is flip-chip bonded to the planar lightwave circuit substrate.
4. The silicon-based 4-channel wdm-demux hybrid ic of claim 1, wherein the first-stage combiner is implemented with a mach-zehnder interferometer.
5. The silicon-based 4-channel wdm-demux hybrid ic of claim 1, wherein the second-stage combiner is implemented with a mach-zehnder interferometer.
6. The silicon-based 4-channel wdm-demux hybrid ic of claim 1 further comprising: and the semiconductor refrigeration chip is arranged on the plane optical wave light path substrate.
7. The silicon-based 4-channel wdm-demux hybrid ic of claim 1, wherein the planar lightwave circuit substrate has a plurality of cross targets.
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| WO2021179312A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Optical receiving assembly and optical module |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583888Y (en) * | 2002-11-14 | 2003-10-29 | 武汉光迅科技有限责任公司 | Dynamic passage energy equalizer based on waveguide array grating block |
| WO2004102254A1 (en) * | 2003-05-15 | 2004-11-25 | Fujitsu Limited | Optical device |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583888Y (en) * | 2002-11-14 | 2003-10-29 | 武汉光迅科技有限责任公司 | Dynamic passage energy equalizer based on waveguide array grating block |
| WO2004102254A1 (en) * | 2003-05-15 | 2004-11-25 | Fujitsu Limited | Optical device |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
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