CN109738987A - 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate - Google Patents
4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate Download PDFInfo
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Abstract
The invention discloses a kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chips of silicon substrate.A kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention, comprising: planar lightwave circuit substrate；Transmitting terminal component on the planar lightwave circuit substrate is set, and the transmitting terminal component includes: four lasers, and four lasers issue the light of four kinds of different wave lengths；The light that four lasers issue is divided into the second road of transmitting terminal light of the transmitting terminal first via light and 5% power that account for 95% power by four 95/5 optical splitters of transmitting terminal, four transmitting terminals, 95/5 optical splitter respectively；Four transmitting terminal monitor photo-diodes, four transmitting terminal monitor photo-diodes receive the second road of the transmitting terminal light issued in four lasers respectively.Beneficial effects of the present invention: silicon-base plane optical path (PLC) Highgrade integration realizes the integrated chip of optical path transmitting terminal and receiving end one, simplifies light module package process flow.
Description
Technical field
The present invention relates to silicon photon fields, and in particular to a kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate.
Background technique
Silicon photon technology is currently a big hot topic of entire optical communications industry, is the next-generation optic communication mould being generally expected
The solution of block chip mainly solves conventional laser in the bottleneck of High Speed Modulation, is known as next-generation single channel 100G
And the solution of the above communication plan；Silicon photon technology is compatible with CMOS technology, by light source, modulator, detector, multiplex/
A series of optical elements such as wave-dividing device, waveguide are integrated in single silicon-based substrate, and the raw material for substantially reducing photon chip are raw
Produce the packaging and testing cost of cost and optical module.Silicon photon technology is significantly promoting device integration, reduces the same of power consumption
When, it is also able to ascend the bandwidth of signal transmission, especially has more advantage than traditional scheme in the optical system of multichannel.
Currently, realizing that the scheme of CWDM4 is broadly divided into the camp Liang great in industry；First big camp is traditional free space optical
Learn the mode that eyeglass realizes wavelength-division multiplex and demultiplexing.It is broadly divided into 3 kinds of major programmes again；The first scheme such as Fig. 1 tradition AWG
Free space multiplex scheme schematic diagram, mainly will by way of geometric optics by the optical path after collimation by most traditional mode
Light is integrated into optical path, and the form of multiplex has AWG chip, plated film waveguide etc. and array grating etc.；
Second scheme uses the coaxial light splitting piece multiplexing and demultiplexing scheme schematic diagram of TO38, as shown in Figure 2；By adjusting point
The angle of mating plate couples to realize；
The third scheme external MUX and DEMUX scheme coaxial using TO38, TO38 is directly poly- unlike second
Coke is coupled to optical fiber, and optical fiber realizes the purpose of multiplexing and demultiplexing in the MUX and DEMUX of AWG；As shown in Figure 3；
The second largest camp is using PLC silicon light hybrid integrated scheme；PSM4 scheme (Paralell is realized at present
Single Mode 4lanes；I.e. parallel 4 channel of single mode), such as Fig. 4 silicon light PSM4 hybrid integrated scheme schematic diagram；But CWDM4 (4
Channel coarse wavelength division multiplexing) it is still that optical signal is compressed to by silicon waveguide using the method for the relevant light multiplexing of traditional free space；
And silicon waveguide uses the scheme of 220nm；
There are following technical problems for traditional technology:
Traditional Free Space Optics eyeglass that CWDM4 is used realizes the mode of wavelength-division multiplex and demultiplexing, there are the problem of
It is that complex process yield lower cost is high, advantage is that the small coupling efficiency of optical path Insertion Loss is higher；Second of use TO38 coaxially divides
Mating plate multiplexing and demultiplexing scheme, compares the index request of light splitting piece that high technology is relative complex, and cost and yield compare the first
It is relatively higher, mainly evade the patent problem of the first scheme；The third TO38 coaxial external MUX and DEMUX scheme,
It is that cost is cheaper in traditional scheme, but the problem of occupied space is big and poor reliability causes yield bottleneck；PLC silicon light
PSM4 hybrid integrated scheme is relatively much higher to the cost of optical distribution network.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate,
Application of the present invention combination COMS technique in SOI substrate, hybrid integrated germanium silicon detector, MZI (Mach-Zehnder
Interferometer) Mach-Cen Deer interferometer, DEMUX and optical splitter in CWDM AWG, the present invention are also to be solved
Problem is exactly the temperature characterisitic of AWG.The AWG chip of silica, wavelength can be increased with temperature in silicon substrate, to long wave direction
It drifts about (expanding with heat and contract with cold, add the synthesis result of refraction index changing), temperature is every to increase 1 DEG C, and wavelength increases 11pm.Correspondingly, also
Temperature dependent loss (TDL) this index: ITU passband be it is fixed, wavelength (curve of spectrum) is with temperature drift, each
Insertion Loss in temperature spot ITU passband is also just different.Chip of the invention finally uses on TEC chip thus, passes through TEC's
Control realizes that chip works under isothermal condition, reaches stable wavelength and Insertion Loss etc.；Due to using integrated germanium silicon detection
Device reduces chip manufacturing process difficulty and process, reduces chip manufacturing cost；By using hybrid integrated scheme greatly
The quantity for reducing the eyeglass discrete component of light pulse chain road simplifies optical module device packaging technology, manufacture is greatly improved
Yield simultaneously realizes that high-volume reduces cost.
In order to solve the above-mentioned technical problems, the present invention provides a kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrateds of silicon substrate
Chip, comprising:
Planar lightwave circuit substrate；
Transmitting terminal component on the planar lightwave circuit substrate is set, and the transmitting terminal component includes:
Four lasers, four lasers issue the light of four kinds of different wave lengths；
Four 95/5 optical splitters of transmitting terminal, four transmitting terminals, 95/5 optical splitter respectively issue four lasers
Light be divided into the second road of transmitting terminal light of the transmitting terminal first via light and 5% power that account for 95% power；
Four transmitting terminal monitor photo-diodes, four transmitting terminal monitor photo-diodes are received respectively described in four
The second road of the transmitting terminal light issued in laser；
Two first order bundling devices, the transmitting that described two first order bundling devices will issue in laser described in four beams
Hold the first via is photosynthetic to become two-beam；And
Second level bundling device, the two-beam that described two first order bundling devices are finally synthesizing by the second level bundling device is again
Secondary synthesis；And
Receiving end component on the planar lightwave circuit substrate is set, and the receiving end component includes:
95/5 optical splitter of receiving end, component received light in receiving end is divided by 95/5 optical splitter of receiving end accounts for 95%
The receiving end first via light of power and the second road of receiving end light of 5% power；
Receiving end monitor photo-diode, the receiving end monitor photo-diode receive second road of receiving end light；
Wave decomposing multiplexer, the Wave decomposing multiplexer receive the receiving end first via light；And
Four photodiodes, four photodiodes receive four beams that the Wave decomposing multiplexer issues respectively
Light.
Beneficial effects of the present invention:
Silicon-base plane optical path (PLC) Highgrade integration realizes the integrated chip of optical path transmitting terminal and receiving end one,
Simplify light module package process flow；
The no longer external optical lens of hybrid integrated scheme, improves bulk, reduces the number of silver epoxy adhesive curing；Drop
The requirement of the low precision to chip mounter；
Germanium silicon detector silicon substrate PLC's is integrated, is reduced costs using COMS technique, reduces technique；Improve product
Reliability；
Using directly modulation laser (DML) back bonding technology；To realize Distributed Feedback Laser ridge waveguide and SOI silicon substrate
The bonding of filter with low insertion loss is realized in the coupling of class optical planar circuit (PLC) under the limitation of angle of scattering and optical waveguide numerical aperture NA；And 3 μ
The application of m thickness silicon waveguide；
The application of germanium silicon detector PD and monitoring detector MPD realize Highgrade integration and silicon-base plane optical path PLC
The fusion of COMS technique, improve can yield production type and effectively simplify technique reduce cost；
Intersect the use of 95/5 optical splitter, closed-loop control provides interface on circuit to realize, reaches final light module product
Constant optical power output accurately control；
The application of cascading Mach Zeng Deer interferometer MZI bundling device, solves the modulation of different wave length phase；
For AWG DEMUX in the fusion of the COMS technique of silicon-base plane optical path PLC, improving can yield production type and effectively simplified work
Skill reduces cost；
Application of the structure of V-groove on this chip is coupled as shown in figure 9, cost is produced in solution in enormous quantities and yield is asked
Topic；
The application of optical planar circuit (PLC) hybrid integrated technology of the light transmit-receive integrated chip of SOI silicon substrate.
The laser is distributed feedback laser in one of the embodiments,.
The laser is mounted in the planar lightwave circuit base by the method for back bonding in one of the embodiments,
On plate.
The first order bundling device is realized by Mach-Zehnder interferometers in one of the embodiments,.
The second level bundling device is realized by Mach-Zehnder interferometers in one of the embodiments,.
In one of the embodiments, further include: the semiconductor refrigerating core on the planar lightwave circuit substrate is set
Piece.
In one of the embodiments, it is characterized in that, the planar lightwave circuit substrate is equipped with several cross target spots.
Detailed description of the invention
Fig. 1 is traditional AWG free space multiplex scheme schematic diagram in background of invention.
Fig. 2 is the coaxial light splitting piece multiplexing and demultiplexing scheme schematic diagram of TO38 in background of invention.
Fig. 3 is the coaxial external MUX and DEMUX scheme schematic diagram of the TO38 in background of invention.
Fig. 4 is the silicon light PSM4 hybrid integrated scheme schematic diagram in background of invention.
Fig. 5 is the structural schematic diagram in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention.
Fig. 6 is the laser upside-down mounting gold tin welding in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention
Schematic diagram.
Fig. 7 is the transmitting terminal monitoring detector MPD in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention
Waveguide cross knot composition.
Fig. 8 is the transmitting terminal monitoring detector MPD in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention
Waveguide cross knot composition.
Fig. 9 is technique cross target spot and coupling in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention
With V-groove structure chart (transmitting-receiving segment structure is consistent).
Figure 10 is the reception end structure and AWG in 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate of the present invention
DEMUX structural schematic diagram.
Specific embodiment
The present invention will be further explained below with reference to the attached drawings and specific examples, so that those skilled in the art can be with
It more fully understands the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
A kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate, comprising:
Planar lightwave circuit substrate；
Transmitting terminal component on the planar lightwave circuit substrate is set, and the transmitting terminal component includes:
Four lasers, four lasers issue the light of four kinds of different wave lengths；
Four 95/5 optical splitters of transmitting terminal, four transmitting terminals, 95/5 optical splitter respectively issue four lasers
Light be divided into the second road of transmitting terminal light of the transmitting terminal first via light and 5% power that account for 95% power；
Four transmitting terminal monitor photo-diodes, four transmitting terminal monitor photo-diodes are received respectively described in four
The second road of the transmitting terminal light issued in laser；
Two first order bundling devices, the transmitting that described two first order bundling devices will issue in laser described in four beams
Hold the first via is photosynthetic to become two-beam；And
Second level bundling device, the two-beam that described two first order bundling devices are finally synthesizing by the second level bundling device is again
Secondary synthesis；And
Receiving end component on the planar lightwave circuit substrate is set, and the receiving end component includes:
95/5 optical splitter of receiving end, component received light in receiving end is divided by 95/5 optical splitter of receiving end accounts for 95% function
The receiving end first via light of rate and the second road of receiving end light of 5% power；
Receiving end monitor photo-diode, the receiving end monitor photo-diode receive second road of receiving end light；
Wave decomposing multiplexer, the Wave decomposing multiplexer receive the receiving end first via light；And
Four photodiodes, four photodiodes receive four beams that the Wave decomposing multiplexer issues respectively
Light.
Beneficial effects of the present invention:
Silicon-base plane optical path (PLC) Highgrade integration realizes the integrated chip of optical path transmitting terminal and receiving end one,
Simplify light module package process flow；
The no longer external optical lens of hybrid integrated scheme, improves bulk, reduces the number of silver epoxy adhesive curing；Drop
The requirement of the low precision to chip mounter；
Germanium silicon detector silicon substrate PLC's is integrated, is reduced costs using COMS technique, reduces technique；Improve product
Reliability；
Using directly modulation laser (DML) back bonding technology；To realize Distributed Feedback Laser ridge waveguide and SOI silicon substrate
The bonding of filter with low insertion loss is realized in the coupling of class optical planar circuit (PLC) under the limitation of angle of scattering and optical waveguide numerical aperture NA；And 3 μ
The application of m thickness silicon waveguide；
The application of germanium silicon detector PD and monitoring detector MPD realize Highgrade integration and silicon-base plane optical path PLC
The fusion of COMS technique, improve can yield production type and effectively simplify technique reduce cost；
Intersect the use of 95/5 optical splitter, closed-loop control provides interface on circuit to realize, reaches final light module product
Constant optical power output accurately control；
The application of cascading Mach Zeng Deer interferometer MZI bundling device, solves the modulation of different wave length phase；
For AWG DEMUX in the fusion of the COMS technique of silicon-base plane optical path PLC, improving can yield production type and effectively simplified work
Skill reduces cost；
Application of the structure of V-groove on this chip is coupled as shown in figure 9, cost is produced in solution in enormous quantities and yield is asked
Topic；
The application of optical planar circuit (PLC) hybrid integrated technology of the light transmit-receive integrated chip of SOI silicon substrate.
A concrete application scene of the invention is described below:
The invention belongs to the CWDM4 based on SOI silicon substrate PLC (Planar Light wave Circuit) substrate to mix collection
At scheme；CWDM4 chip operation four wavelength 1271/ as defined in IEEE802.3clause 87.6 (ITU-T is G.694.2)
1291/1311/1331nm, passband ± 6.5nm.It can be used for 40GE-LR4 and 100GE-CWDM4/CLR4 optical module.Such as Fig. 5 institute
Show, CWDM4 silicon light hybrid integrated transceiving chip structure chart；All devices integrate on the substrate of SOI silicon substrate；Main includes two
It is most of；First part's transmitting terminal chip composition；A. the Distributed Feedback Laser chip of four different wave lengths；B. transmitting terminal optical splitter；c.
Transmitting terminal germanium silicon monitor photo-diode (MPD), can be made of germanium silicon material；；D. with cascade bundling device；E. technique cross
Target spot；F. transmitting terminal V-groove；G. especially to illustrate that main optical path waveguide uses 3 μ m-thick silicon technologies；Second part receiving end
Chip composition；(1) photodiode can be made of germanium silicon material；(2) Wave decomposing multiplexer (DEMUX)；(3) receiver section coupling
The MPD shared is mainly used for the Insertion Loss of coupling and process test waveguide；(4) receiving end couples V-groove；
Primary structure and description of the process are as follows:
The main technique of the Distributed Feedback Laser chip of 5.1 4 kinds of wavelength is to use back bonding, as shown in fig. 6, DFB upside-down mounting
Method of the golden tin welding in PLC；Laser upside-down mounting is welded to planar lightguide circuit PLC (Planar Light wave
Circuit) the structure and method of substrate (note: PLC is the general designation of this patent silicon substrate semi-finished product chip)；It is characterized in that, improvement
Laser keeps its P/N extremely coplanar convenient for flip chip bonding, and setting positioning stops on laser and planar lightguide circuit PLC substrate respectively
Only platform structure, technique require eutectic machine precision at ± 0.5 μm.Maturation no longer illustrates for such equipment and technique.
5.2 germanium silicon (GeSi) monitoring detectors and 95/5 optical splitter, Si-based photodetectors (PD) are cheap and compatible because of it
CMOS technology becomes domestic and international opto-electronics research and gradually volume production convenient for the advantage that photoelectricity integrates；Started to 2009
Foreign countries start to study germanium silicon PIN.A kind of small size (1.3 μm * 4 μm) is made to Sandia National Labs in 2011
COMS process compatible waveguiding structure germanium silicon detector, has reached ultralow dark current 3nA and responsiveness 0.8A/W and possesses 45GHz
Bandwidth；Germanium silicon MPD and receiving end germanium silicon detector either of the invention has enough technical supports；As shown in fig. 7, sending out
Penetrating end has 4 MPD to constitute waveguide intersection；Since lower principle (loss of each intersection is probably 0.1dB or so) is lost,
Effectively 4 monitoring detector MPD are put together, is put convenient for array TIA trans-impedance amplifier when subsequent package of optical device.
5.3 cascading Mach Zeng Deer interferometer MZI bundling devices, as shown in Figure 8；Transmitting terminal is real using cascade MZI bundling device
The multiplex of existing different wave length, the asymmetric brachium of mode main three kinds: a. that single MZI is realized are realized；B. doping changes folding in arm
Penetrate rate adjustment phase place；C. single armed injection circuit mode is realized；Because silicon substrate and MZI are to the sensibility of temperature, illustrate we again
Case is that whole ensured using TEC refrigerator temperature control is worked under isoperibol；
The structure of 5.4 cross target spots and V-groove, as shown in Figure 9；Technique cross target spot is mainly used for chip manufacturing process
Reference point location when needing to etch with waveguide while being carried out to ensure overall precision, especially face-down bonding Distributed Feedback Laser core
Piece；Practical structures are 10 ± 3 μm of cross etching depth clear-cut, and the CCD for chip flow or welding equipment is quick
Identification；Light end face avoiding hollow groove mainly solves the problems, such as, if bare fibre end face processing technology will using laser cutting
Coaxial problem can not be cannot achieve with light end face hot spot by causing mushroom head to be placed in V-groove, be mass produced convenient for mass；
The structure of V-groove is mainly inscribed circle having a size of 125 ± 0.3 μm of bare fibre of largest contours size；Reach the smallest coupling to insert
Damage is to improve coupling efficiency；This structure is all consistent in the transmitting terminal and reception end structure of entire chip.
5.5 receiving end overall structures, wherein cross target spot and a section on coupling V-groove have described；Receiving end MPD is also
Using 95/5 optical splitter, monitoring detector as transmitting terminal, using germanium silicon PD the purpose of be the integrated of COMS silicon substrate,
Simplify manufacturing process and reduces chip cost；This programme uses AWG DEMUX to manufacture with optical planar circuit (PLC) technology
Device；As shown in Figure 10；Working principle is mainly to use the structure and principle of concave reflective grating and Rowland circle；Therefore structure
It has been widely applied and has no longer illustrated herein；High frequency germanium silicon detector is explained in 5.2 sections and monitoring detector is using same
The technique of sample is only variant in parameter；
Embodiment described above is only to absolutely prove preferred embodiment that is of the invention and being lifted, protection model of the invention
It encloses without being limited thereto.Those skilled in the art's made equivalent substitute or transformation on the basis of the present invention, in the present invention
Protection scope within.Protection scope of the present invention is subject to claims.
Claims (7)
1. a kind of 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate characterized by comprising
Planar lightwave circuit substrate；
Transmitting terminal component on the planar lightwave circuit substrate is set, and the transmitting terminal component includes:
Four lasers, four lasers issue the light of four kinds of different wave lengths；
Four 95/5 optical splitters of transmitting terminal, the light that four transmitting terminals, 95/5 optical splitter respectively issues four lasers
It is divided into the second road of transmitting terminal light of the transmitting terminal first via light and 5% power that account for 95% power；
Four transmitting terminal monitor photo-diodes, four transmitting terminal monitor photo-diodes receive four laser respectively
The second road of the transmitting terminal light issued in device；
Two first order bundling devices, described two first order bundling devices are by the transmitting terminal issued in laser described in four beams
It is photosynthetic all the way to become two-beam；And
Second level bundling device, the second level bundling device close the two-beam that described two first order bundling devices are finally synthesizing again
At；And
Receiving end component on the planar lightwave circuit substrate is set, and the receiving end component includes:
95/5 optical splitter of receiving end, component received light in receiving end is divided by 95/5 optical splitter of receiving end accounts for 95% power
The second road of receiving end light of receiving end first via light and 5% power；
Receiving end monitor photo-diode, the receiving end monitor photo-diode receive second road of receiving end light；
Wave decomposing multiplexer, the Wave decomposing multiplexer receive the receiving end first via light；And
Four photodiodes, four photodiodes receive the four bundles light that the Wave decomposing multiplexer issues respectively.
2. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that described to swash
Light device is distributed feedback laser.
3. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that described to swash
Light device is by the method for back bonding on the planar lightwave circuit substrate.
4. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that described
Level-one bundling device is realized by Mach-Zehnder interferometers.
5. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that described
Second level bundling device is realized by Mach-Zehnder interferometers.
6. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that further include:
Semiconductor refrigeration chip on the planar lightwave circuit substrate is set.
7. 4 channel wavelength-division multiplexing and demultiplexing hybrid integrated chip of silicon substrate as described in claim 1, which is characterized in that described flat
Face lightwave circuit substrate is equipped with several cross target spots.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110806624A (en) * | 2019-11-26 | 2020-02-18 | 杭州芯耘光电科技有限公司 | Multichannel high-speed communication optical device |
| CN110989102A (en) * | 2019-12-10 | 2020-04-10 | 天津工业大学 | Silicon-based WDM optical transmission device based on VCSEL array hybrid integration and optical fiber vertical packaging |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| WO2021179312A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Optical receiving assembly and optical module |
| CN115343809A (en) * | 2022-02-10 | 2022-11-15 | 讯芸电子科技(中山)有限公司 | Light emitting device and light receiving device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583888Y (en) * | 2002-11-14 | 2003-10-29 | 武汉光迅科技有限责任公司 | Dynamic passage energy equalizer based on waveguide array grating block |
| WO2004102254A1 (en) * | 2003-05-15 | 2004-11-25 | Fujitsu Limited | Optical device |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN206848526U (en) * | 2017-02-14 | 2018-01-05 | 上海新微科技服务有限公司 | Silicon substrate WDM optical transceiver modules |
-
2019
- 2019-03-20 CN CN201910212599.8A patent/CN109738987B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2583888Y (en) * | 2002-11-14 | 2003-10-29 | 武汉光迅科技有限责任公司 | Dynamic passage energy equalizer based on waveguide array grating block |
| WO2004102254A1 (en) * | 2003-05-15 | 2004-11-25 | Fujitsu Limited | Optical device |
| CN102243340A (en) * | 2011-07-05 | 2011-11-16 | 武汉电信器件有限公司 | Hybrid integrated planar waveguide detector chip based on coarse wave decomposing and multiplexing |
| CN102882601A (en) * | 2012-09-10 | 2013-01-16 | 胡朝阳 | Silicon photonic integrated high-speed optical communication transceiver module |
| CN206848526U (en) * | 2017-02-14 | 2018-01-05 | 上海新微科技服务有限公司 | Silicon substrate WDM optical transceiver modules |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110806624A (en) * | 2019-11-26 | 2020-02-18 | 杭州芯耘光电科技有限公司 | Multichannel high-speed communication optical device |
| CN110989102A (en) * | 2019-12-10 | 2020-04-10 | 天津工业大学 | Silicon-based WDM optical transmission device based on VCSEL array hybrid integration and optical fiber vertical packaging |
| WO2021179312A1 (en) * | 2020-03-13 | 2021-09-16 | 华为技术有限公司 | Optical receiving assembly and optical module |
| CN112904496A (en) * | 2021-01-14 | 2021-06-04 | 众瑞速联（武汉）科技有限公司 | Silicon optical integrated module |
| CN115343809A (en) * | 2022-02-10 | 2022-11-15 | 讯芸电子科技(中山)有限公司 | Light emitting device and light receiving device |
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| CN109738987B (en) | 2020-05-22 |
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