CN104914506A - InP-based mode division multiplexer/demultiplexer structure based on multimode interference coupler - Google Patents
InP-based mode division multiplexer/demultiplexer structure based on multimode interference coupler Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
- G02B6/2808—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs
- G02B6/2813—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using a mixing element which evenly distributes an input signal over a number of outputs based on multimode interference effect, i.e. self-imaging
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Abstract
The invention relates to an InP-based mode division multiplexer/demultiplexer structure based on a multimode interference coupler. The structure mainly comprises three parts which are a multimode interference coupler based mode conversion and separation structure, Pi/2 phase shift structure and a multimode interference coupler based 3dB coupler structure. In the Pi/2 phase shift structure, a transmission mode in a waveguide is enabled to be changed in phase shift through tuning the thickness of a waveguide core layer, and the phase shift change reaches Pi/2 when the length of the waveguide is a certain specific value. The mode multiplexer/demultiplexer structure has the advantages of compact structure, small device size, large channel bandwidth, low insertion loss and low channel crosstalk, and is simple in production process and high in production tolerance, thereby being very suitable for monolithic integration with devices such as a semiconductor laser, a modulator, an amplifier, a detector and the like, and being a key device for studying a mode division multiplexing technology based monolithic integration few-mode optical communication transmitting and receiving module.
Description
Technical field
The invention belongs to few mould technical field of photo communication, be specifically related to a kind of mould based on multi-mode interference coupler block copolymer and divide multiplexing demultiplexing device structure, be a kind of can implementation pattern conversion and the InP-base waveguide device of mould point multiplex/demultiplex.
Background technology
Due in Networks of Fiber Communications, internet network fast development, the sharply increase of people to system data rates, data capacity demand is had higher requirement to communication bandwidth and transfer rate, and the transmission capacity expanding single optical fiber becomes the most important thing.In order to improve the Signal transmissions capacity of Networks of Fiber Communications, there has been proposed the technology such as wavelength-division multiplex technique, time-division multiplex technology, polarization multiplexing and obtaining checking experimentally.In addition, novel optical modulation formats, as OFDM, M-QAM etc. improve the spectrum efficiency of system.But, because fiber amplifier is to amplifying the restriction of bandwidth and nonlinear fiber, optical fiber power tolerance limit to the restriction of emissive source power, be very difficult for the larger Optical Fiber Transmission capacity of realization.Therefore, the technological breakthrough that eager needs one are new improves the transmission capacity of single optical fiber further, to meet the growing high-speed communicating network demand of people.
There has been proposed the method utilizing the various modes in optical fiber to carry out transmitting the transmission capacity improving single optical fiber, namely mould divides multiplex technique, the signal carrier of multiple patterns in less fundamental mode optical fibre is utilized to carry out information transmission, especially combine with technology such as wavelength-division multiplex technique, time-division multiplex technology, polarization multiplexings, greatly can promote the transmission capacity of communication system.In mould division multiplexing system, mode multiplexing/demultiplexing device is a very crucial device, thus obtains the extensive concern of people.
At present, the device for making pattern multiplexing demultiplexing device structure mainly comprises asymmetrical directional coupler, the asymmetric Y waveguide of cascade, adiabatic coupler etc., and most of device is all based on SOI waveguide.But, make to adopt the mode multiplexing of these structure fabrications/demultiplexing device to there is intrinsic deficiency because these structures exist intrinsic defect own, if the mode multiplexing/demultiplexing device based on asymmetrical directional coupler is not only to wavelength sensitive, and manufacture craft tolerance is less, most of device all makes on soi structure.Mode multiplexing/demultiplexing device based on the asymmetric Y waveguide of cascade then has very large device size.Owing to there is based on the mode multiplexing/demodulation multiplexer structure of multi-mode interference coupler lower insertion loss and wider channel width and causing people's interest widely in recent years.Principle of work based on the mode multiplexing/demodulation multiplexer of multi-mode interference coupler is shown in Fig. 1: basic mode is input in the patten transformation isolating construction 1 based on multi-mode interference coupler, the length of this device architecture is 3L π/4, is therefore coupled in middle output channel 3.And First-Order Mode is when being input in the patten transformation isolating construction 1 based on multi-mode interference coupler, First-Order Mode is converted to two basic modes, and its output power is equal, phase by pi, exports respectively from the output channel 2 at two ends and passage 4.The effect in pi/2 phase shift district is, the phase differential π from the beginning of the basic mode making two output powers exporting from passage 2 and passage 4 respectively equal becomes pi/2.Like this from the basic mode that passage 2, passage 3, passage 4 export, to be input to length be 3L pi/2 based in the three-dB coupler structure of multi-mode interference coupler structure time, the basic mode being positioned at passage 3 still exports from the output port 6 of centre.And due to the basic mode phase pi/2 of passage 2 and passage 4, the output waveguide that these two basic modes are coupled to side exports (port 5 or port 7), and opposite side output port does not then have light output.Therefore, this device not only achieves the function of pattern demultiplexing, and First-Order Mode is converted to basic mode, and its conversion efficiency is 100%.If device is inverted, then can the multiplexing function of implementation pattern.Key based on the mode multiplexing/demodulation multiplexer structure of multi-mode interference coupler is design compact conformation, manufacture craft is simple, insertion loss is little and the pi/2 phase shift district that making tolerance is large.The pi/2 phase shift difference of implementation pattern multiplexing demultiplexing device structure mainly contains two kinds of methods, and a kind of is the length changing phase-shifted region, and another kind is the effective refractive index changing phase-shifted region.The method of the length of change phase-shifted region mainly contains the phase-shifted region structure based on inclination johning knot.But this structure inevitably introduces extra loss, and due to output waveguide be tilt, can not directly be coupled with optical fiber, other devices.
Owing to having based on the mode multiplexing/demultiplexing device of InP and the single chip integrated advantage of active device such as semiconductor laser, therefore propose and on InP material, make aobvious particularly important of mode multiplexing/demultiplexing device that has small device size, major path bandwidth, low insertion loss, low channels crosstalk.
Summary of the invention
The object of the invention is to propose a kind of mode multiplexing based on InP material/demodulation multiplexer structure, its pi/2 phase shift difference is realized by the thickness changing waveguide core layer.This device can be applicable to the application of less fundamental mode optical fibre communication system, is Primary Component wherein.This device not only can realize the function of basic mode and First-Order Mode mode multiplexing/demultiplexing, and First-Order Mode can be basic mode, compared to based on multi-mode interference coupler 50%, 66% mode converter structure, the mode conversion efficiency of this device is higher, be 100%, almost there is no modal loss.This mode multiplexing/demodulation multiplexer structure has the advantage that compact conformation, device size are little, channel width is comparatively large, insertion loss is lower, channels crosstalk is lower, and its technique makes simple, make tolerance comparatively large, be very suitable for the single-chip integration with the device such as semiconductor laser, modulator, amplifier, detector.That research divides the Primary Component of the few mould optical communication transceiver module of the single-chip integration of multiplex technique based on mould.
Accompanying drawing explanation
For further illustrating concrete technical characteristic of the present invention, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further details, wherein:
Fig. 1 divides multiplexing demultiplexing device structural representation based on the mould of multi-mode interference coupler;
Fig. 2 is the material structure sectional view of device;
Fig. 3 is the diagrammatic cross-section of embodiment one A-A ' line in Fig. 1;
Fig. 4 is the diagrammatic cross-section of embodiment two A-A ' line in Fig. 1.
Description of reference numerals:
A is the patten transformation isolating construction based on multi-mode interference coupler; B is the three-dB coupler structure based on multi-mode interference coupler; C is pi/2 phase shift structure;
1. be N-type InP substrate;
2. be N-type InP cushion that thickness is 500nm;
3. be InGaAsP waveguide core layer (its band gap wavelength is 1.3 μm, and with InP Lattice Matching);
4. be 1.7 μm of thick undoped InP waveguide cap rocks,
Embodiment
Just multiplexing demultiplexing device structure is divided to be described based on the mould based on multi-mode interference coupler increasing and reduce the effective refractive index of phase-shifted region and realize the method for pi/2 phase shift difference respectively below.
Embodiment 1
The mould based on multi-mode interference coupler being realized pi/2 phase shift difference by the effective refractive index increasing phase-shifted region divides multiplexing demultiplexing device structure.
As shown in Figures 2 and 3, the epitaxial material structure of device is described below: first 1. go up once extension N-type InP cushion 2. (thickness is 500nm) in N-type InP substrate, 3. (its band gap wavelength is 1.3 μm to the thick InGaAsP waveguide core layer of 300nm, and with InP Lattice Matching), the undoped InP etching stop layer that 20nm is thick, with the thick InGaAsP waveguide core layer of 100nm 3. (its band gap wavelength is 1.3 μm, and itself and InP Lattice Matching).Next by photoetching and wet selective etching process, InGaAsP waveguide core layer thick for the 100nm in other regions except phase-shifted region is eroded.Then the undoped InP waveguide cap rock that secondary epitaxy 1.7 μm is thick 4..
In Fig. 1, mould divides the various piece of multiplexing demultiplexing device part to be of a size of: the width of input waveguide port one is 3.4 μm, the width of port 3 is 3.4 μm, the width of output waveguide port 5 and port 7 is 1.7 μm, and output waveguide port 6 width is 3.4 μm, and the width of port 2 and 4 is 1.7 μm.Multiple-mode interfence coupling regime width in patten transformation isolating construction (1) is 9 μm, and length is 178 μm.Multiple-mode interfence coupling regime width in three-dB coupler structure (2) is 9 μm, and length is 356 μm.The length of port 2, port 3 and port 4 is 14.7 μm, and because phase-shifted region is on port 4 or port 2, the length of phase-shifted region is 14.7 μm.Device adopts deep etching ridge waveguide structure, first adopts photoetching process by the Graphic transitions on mask plate on substrate, then the etched InGaAsP waveguide core layer of the employing dry lithography of inductively coupled plasma.Complete the manufacture craft that whole mould divides multiplexing demultiplexing device.
Three-dimensional beamfoil spectrum is adopted to carry out simulation analysis to this device.When fundamental signal being inputted mould and dividing multiplexing demultiplexing device structure, nearly all pattern all exports from the output waveguide port 6 of centre.The insertion loss of its pattern only has 0.02dB, almost negligible.When First-Order Mode signal input mould being divided multiplexing demultiplexing device structure, nearly all pattern all exports from output port 7, and by First-Order Mode conversion in order to basic mode, its modal loss only has 0.21dB, almost can reach the mode conversion efficiency of 100%.According to the simulation result of above-mentioned device, this device successfully achieves the pattern demultiplexing function of basic mode and First-Order Mode, due to the reversibility of light path, is inverted by this device, can the multiplexing function of implementation pattern.Therefore, this device not only 100% First-Order Mode is converted to basic mode, and successfully achieve mould point multiplex/demultiplex function.And this device making technics is simple, makes tolerance comparatively large, be very suitable for carrying out single-chip integration with active device.
Embodiment 2:
The mould based on multi-mode interference coupler being realized pi/2 phase shift difference by the effective refractive index reducing phase-shifted region divides multiplexing demultiplexing device structure;
As shown in Figure 2 and Figure 4, the epitaxial material structure of device is described below: first 1. go up once extension N-type InP cushion 2. (thickness is 500nm) in N-type InP substrate, 3. (its band gap wavelength is 1.3 μm to the thick InGaAsP waveguide core layer of 300nm, and itself and InP Lattice Matching), the undoped InP etching stop layer that 20nm is thick, with the thick InGaAsP waveguide core layer of 100nm 3. (its band gap wavelength is 1.3 μm, and itself and InP Lattice Matching).Next by photoetching and wet selective etching process, InGaAsP waveguide core layer thick for phase-shifted region 100nm is eroded.Then the undoped InP waveguide cap rock that secondary epitaxy 1.7 μm is thick 4..
In Fig. 1, mould divides the various piece of multiplexing demultiplexing device part to be of a size of: the width of input waveguide port one is 3.4 μm, the width of port 3 is 3.4 μm, the width of output waveguide port 5 and port 7 is 1.7 μm, output waveguide port 6 width is 3.4 μm, the width of port 2 and 4 is 1.7 μm, multiple-mode interfence coupling regime width in patten transformation isolating construction (1) is 9 μm, and length is 178 μm.Multiple-mode interfence coupling regime width in three-dB coupler structure (2) is 9 μm, and length is 356 μm.The length of port 2, port 3 and port 4 is 14.7 μm, and because phase-shifted region is on port 4 or port 2, the length of phase-shifted region is 14.7 μm.Device adopts deep etching ridge waveguide structure, and its manufacture craft is identical with embodiment 1.
Three-dimensional beamfoil spectrum is used to carry out simulation analysis to this device.When fundamental signal being inputted mould and dividing multiplexing demultiplexing device structure, nearly all pattern all exports from the output waveguide port 6 of centre.
When First-Order Mode signal input mould being divided multiplexing demultiplexing device structure, nearly all pattern all exports from output port 5, and by First-Order Mode conversion in order to basic mode, successfully achieves mode conversion function.Therefore this device can realize the mode multiplexing/demultiplexing function of basic mode and First-Order Mode, and First-Order Mode can be converted to basic mode, and its mode conversion efficiency is almost 100%.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; do not limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., be all included within protection scope of the present invention.
Claims (10)
1. the InP-base mould based on multi-mode interference coupler divides a multiplexing demultiplexing device structure, comprising:
One based on patten transformation isolating construction (a) of multi-mode interference coupler;
One based on three-dB coupler structure (b) of multi-mode interference coupler;
One pi/2 phase shift structure (c), its input end is connected with the output terminal of patten transformation isolating construction (a) based on multi-mode interference coupler, and its output terminal is connected with the input end of three-dB coupler structure (b) based on multi-mode interference coupler structure.
2. the InP-base mould based on multi-mode interference coupler according to claim 1 divides multiplexing demultiplexing device structure, wherein said patten transformation isolating construction (a) based on multi-mode interference coupler comprising: an input port (1), multiple-mode interfence coupling regime and three output terminals: port (2), port (3) and port (4), the effect of this structure is exported by the intermediate output mouth (3) of fundamental signal from patten transformation isolating construction (a), it is identical that First-Order Mode signal is then converted to two amplitudes, the basic mode of phase by pi, respectively from both sides port (2) and port (4) output of patten transformation isolating construction (a).
3. the InP-base mould based on multi-mode interference coupler according to claim 1 divides multiplexing demultiplexing device structure, wherein said three-dB coupler structure (b) based on multi-mode interference coupler comprising: port (2), port (3), port (4) three input ends, multiple-mode interfence coupling regime and port (5), port (6), port (7) three output ports, the effect of this structure is that the basic mode making to export from patten transformation isolating construction (1) output port (3) exports from the middle output waveguide port (6) of three-dB coupler structure (b), the basic mode exported from patten transformation isolating construction (1) port (2) and port (4) is made to close bundle, from output port (5) or port (7) output of three-dB coupler structure (2), reach the object of modal cutoff.
4. divide multiplexing demultiplexing device structure according to claim 1 based on the InP-base mould of multi-mode interference coupler, wherein said pi/2 phase shift structure (c) comprises three waveguiding structures: port (2), port (3) and port (4), and the effect of this structure is the phase differential that the waveguide mode making to transmit at port (2) and port (4) produces pi/2.
5. the InP-base mould based on multi-mode interference coupler according to any one of claim 1 or 2 divides multiplexing demultiplexing device structure, wherein the width of the input port (1) of patten transformation isolating construction (a) is identical with the width of output port (3), the width of output port (2) is identical with the width of output port (4), and wherein the width of input port (1) is the twice of the width of output port (2).
6. the InP-base mould based on multi-mode interference coupler according to any one of claim 1 or 3 divides multiplexing demultiplexing device structure, wherein the width of the input port (2) of three-dB coupler structure (b) is identical with the width of output port (5), the width of input port (4) is identical with the width of output port (7), and the width of input port (3) is identical with the width of output port (6).
7. the InP-base mould based on multi-mode interference coupler according to claim 1 divides multiplexing demultiplexing device structure, and it is characterized in that, material structure comprises:
One substrate;
One cushion, this cushion is produced in substrate;
One waveguide core layer, this waveguide core layer makes on the buffer layer;
One waveguide cap rock, this waveguide cap rock is produced in waveguide core layer.
8. the InP-base mould based on multi-mode interference coupler according to claim 7 divides multiplexing demultiplexing device structure, wherein the material of waveguide core layer to be band gap wavelength the be quaternary compound InGaAsP structure of 1.3 μm.
9. the InP-base mould based on multi-mode interference coupler according to claim 7 divides multiplexing demultiplexing device structure, and the waveguide core layer thickness of wherein said patten transformation isolating construction (a) is identical with the waveguide core layer thickness of three-dB coupler structure (b).
10. divide multiplexing demultiplexing device structure based on the InP-base mould of multi-mode interference coupler according to claim 7, wherein the port (2) of pi/2 phase shift structure (c) is not identical with the waveguide core layer thickness of port (4).
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388564A (en) * | 2015-12-03 | 2016-03-09 | 中国科学院半导体研究所 | InP-base few-mode photo integrated emission chip based on MMI coupler |
| CN106933001A (en) * | 2017-05-04 | 2017-07-07 | 上海交通大学 | Based on the photon modulus conversion chip that silicon light is integrated |
| CN108196340A (en) * | 2018-01-10 | 2018-06-22 | 南京邮电大学 | A kind of three dimensional pattern based on multiple-mode interfence coupling converts beam splitter |
| CN109186582A (en) * | 2018-09-27 | 2019-01-11 | 华中科技大学 | A kind of on piece optical interference formula angular speed sensing module |
| WO2019214244A1 (en) * | 2018-05-08 | 2019-11-14 | 华为技术有限公司 | Optical beam splitter, optical power monitoring device, and laser chip |
| CN111244751A (en) * | 2020-01-19 | 2020-06-05 | 中国科学院半导体研究所 | Optical communication transceiving structure integrating laser and photoelectric detector |
| CN111273404A (en) * | 2020-04-08 | 2020-06-12 | 上海交通大学 | Two-mode end face coupler |
| CN112630889A (en) * | 2021-03-05 | 2021-04-09 | 苏州海光芯创光电科技股份有限公司 | Photon integrated chip for processing multimode optical signal |
| CN115032743A (en) * | 2022-07-26 | 2022-09-09 | 上海安湃芯研科技有限公司 | Multi-mode interference coupler type polarizer based on thin-film lithium niobate |
| WO2022228136A1 (en) * | 2021-04-30 | 2022-11-03 | 华为技术有限公司 | Optical power adjustment system and optical power adjustment device |
| CN116520494A (en) * | 2023-06-28 | 2023-08-01 | 之江实验室 | Silicon nitride waveguide TE0/TE1 broadband mode converter |
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| CN105388564A (en) * | 2015-12-03 | 2016-03-09 | 中国科学院半导体研究所 | InP-base few-mode photo integrated emission chip based on MMI coupler |
| CN105388564B (en) * | 2015-12-03 | 2018-03-23 | 中国科学院半导体研究所 | The few mould integreted phontonics transmitting chip of InP-base based on MMI couplers |
| CN106933001A (en) * | 2017-05-04 | 2017-07-07 | 上海交通大学 | Based on the photon modulus conversion chip that silicon light is integrated |
| CN106933001B (en) * | 2017-05-04 | 2019-04-19 | 上海交通大学 | The photon modulus conversion chip integrated based on silicon light |
| CN108196340A (en) * | 2018-01-10 | 2018-06-22 | 南京邮电大学 | A kind of three dimensional pattern based on multiple-mode interfence coupling converts beam splitter |
| WO2019214244A1 (en) * | 2018-05-08 | 2019-11-14 | 华为技术有限公司 | Optical beam splitter, optical power monitoring device, and laser chip |
| CN110455405A (en) * | 2018-05-08 | 2019-11-15 | 华为技术有限公司 | Beam splitter, optical power monitoring device and chip of laser |
| CN109186582A (en) * | 2018-09-27 | 2019-01-11 | 华中科技大学 | A kind of on piece optical interference formula angular speed sensing module |
| CN111244751A (en) * | 2020-01-19 | 2020-06-05 | 中国科学院半导体研究所 | Optical communication transceiving structure integrating laser and photoelectric detector |
| CN111244751B (en) * | 2020-01-19 | 2021-08-03 | 中国科学院半导体研究所 | Optical communication transceiving structure integrating laser and photoelectric detector |
| CN111273404A (en) * | 2020-04-08 | 2020-06-12 | 上海交通大学 | Two-mode end face coupler |
| CN111273404B (en) * | 2020-04-08 | 2021-11-02 | 上海交通大学 | Two-mode end face coupler |
| CN112630889A (en) * | 2021-03-05 | 2021-04-09 | 苏州海光芯创光电科技股份有限公司 | Photon integrated chip for processing multimode optical signal |
| WO2022228136A1 (en) * | 2021-04-30 | 2022-11-03 | 华为技术有限公司 | Optical power adjustment system and optical power adjustment device |
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| CN116520494A (en) * | 2023-06-28 | 2023-08-01 | 之江实验室 | Silicon nitride waveguide TE0/TE1 broadband mode converter |
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