CN106933001A - Based on the photon modulus conversion chip that silicon light is integrated - Google Patents
Based on the photon modulus conversion chip that silicon light is integrated Download PDFInfo
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- CN106933001A CN106933001A CN201710309474.8A CN201710309474A CN106933001A CN 106933001 A CN106933001 A CN 106933001A CN 201710309474 A CN201710309474 A CN 201710309474A CN 106933001 A CN106933001 A CN 106933001A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F7/00—Optical analogue/digital converters
Abstract
A kind of photon modulus conversion chip integrated based on silicon light, comprising time-division multiplexing unit, wavelength-division multiplex unit, mode division multiplexing unit, multi-mode modulator, pattern demultiplexing unit, wavelength (de) multiplexing unit and photodetector unit, each element can be monolithically integrated on same silicon base chip.The present invention allows the light wave input optical pulse repetition rate is further improved by different polarization and different waveguide pattern, so as to be easier to realize the optical analog to digital conversion of high sampling rate.
Description
Technical field
The present invention relates to the time division multiplex (OTDM) in optic communication, wavelength-division multiplex (WDM), palarization multiplexing (PDM) and mould point
The technologies such as multiplexing (MDM), are a kind of photonic analogy data signal converting system chips integrated based on silicon light.
Background technology
With the continuous expansion of scientific research field, the bandwidth more and more higher of analog signal to be processed is needed in scientific research.Mould
Intend signal in transmission and processing procedure, be readily incorporated noise, cause the distortion of signal.Analog signal digital can be brought
Lot of advantages, particularly data signal will not introduce extra noise in transmission and processing procedure, can keep the standard of signal
True property.Between broadband analog signal and good digital treatment technology, it is necessary to high performance analog-digital converter as both it
Between bridge, broadband analog signal is converted to data signal.It is essential that high-performance analog-digital converter turns into modern technologies
A part.
The development of existing analog-digital converter is limited by electronic device bottleneck, Single Electron analog-digital converter (EADC)
Performance be difficult improve.The performance of electronic analogue-to-digital converter constantly declines with the increase of sample frequency：Sample frequency from
When 2MHz increases to 4GHz, sample frequency is often doubled, and resolution ratio declines 1 bit；Sample rate is higher, shakes bigger, and precision is got over
It is low.
With the development of Fibre Optical Communication Technology, light sub-adc converter (Photonic Analog to are occurred in that
Digital Converter, hereinafter referred to as PADC).Electronic analogue-to-digital converter reality can be substituted using light sub-adc converter
Now to the direct sampling and quantization of ultra wide band analog electrical signal.The Optical Time Division Multiplexing Technology and wavelength-division multiplex skill of fiber optic communication field
Art can realize the multiplexing and demultiplexing to light pulse signal of sampling, and be advantageously implemented ultra-high speed sampling.Based on fiber optic communication skill
The optical analog-to-digital converter of art effectively overcomes the bottleneck of electronic analogue-to-digital converter, with bandwidth it is high, be lost small, stability it is high
The advantages of.
The content of the invention
The present invention is theoretical based on existing optical fiber telecommunications system and fiber waveguide integrated technology proposes one kind based on silicon substrate light
The integrated photon modulus conversion chip of electronics.The photon modulus conversion chip improves sample rate in tradition by time wavelength-interleaved
On the basis of, using orthogonality of the light on different mode (comprising polarization), sample rate is further improved by being multiplexed, so that
Realize ultra-high speed sampling.Light pulse after sampling is changed into electric signal, by electricity again by pattern, wavelength (de) multiplexing through detector
Analog-digital converter carries out rear end quantification treatment.The photon modulus conversion chip make use of time, three dimensions of wavelength and pattern, more
It is easily achieved the high-speed sampling to broadband analog signal.
To reach above-mentioned purpose, technical solution of the invention is as follows：
A kind of photon modulus conversion chip based on Si-based OEIC, its structure is followed successively by time division multiplex by left-to-right
Unit, wavelength-division multiplex unit, mode division multiplexing unit, multi-mode modulator unit, mould decomposition multiplex unit, wavelength (de) multiplexing unit and
Photoelectric detection unit.Time-division multiplexing unit is cascaded or in series by delay waveguide, wavelength-division multiplex unit by multi-stage cascade Mach-
Once moral interferometer or array waveguide grating were constituted, and mode division multiplexing unit is made up of directional coupler, and multi-mode modulator is by multimode ripple
Lead Mach-Zehnder interferometer and multimode phase-modulator composition is embedded on both arms, pattern and wavelength (de) multiplexing unit are therewith
Preceding pattern and wavelength multiplexing unit is identical, simply enters with output port conversely, photoelectric detection unit grows germanium simultaneously by silicon
PIN diode is formed by doping to constitute.Above-mentioned each unit is sequentially connected, and constitutes chip system in a complete slice.
Each unit is integrated on same chip.The input of the chip is using mode-locked laser as light source, input light
It is divided into behind N roads by postponing at equal intervals, is afterwards again combined into all the way N roads, the repetition rate increase for so allowing for pulse is
Originally N times, this is time-division multiplexing unit function.Then, then to light pulse signal carry out wavelength-division multiplex by be input into each
Light pulse is divided into the M pulse of different wave length, by different delays, then is combined into all the way so that pulse recurrence frequency increases
M times during for input.Finally recycling polarization and patten transformation input light all the way is divided into T roads has different polarization and pattern special
The output light of property, in being coupled to multimode waveguide after different delays, thus the repetition rate of pulse increases again in multimode waveguide
T times is added.By after three-level time-division above, wavelength-division and mode division multiplexing unit, compared with chip input optical pulse, repetition rate
M × N × T times is improve, thus ultrahigh speed can be obtained and use pulse.The light pulse of multimode waveguide is entered into through multi-mode modulator
Input microwave signal is sampled after modulation, be reduced to for repetition rate after mould decomposition multiplex unit by the pulse signal after modulation
1/T before, then by after wavelength (de) multiplexing unit again by its repetition rate be 1/M, enter into photodetector array afterwards
Row opto-electronic conversion, subsequent treatment is carried out by electric AD conversion unit.
Preferably, whole system include time-division multiplexing unit, wavelength-division multiplex unit, mode division multiplexing unit, multi-mode modulator,
Mould decomposition multiplex unit, wavelength-division demultiplexing unit, time-division demultiplexing unit and photo detecting unit can all be integrated into one piece of core
On piece.
Preferably, the system uses plural serial stage or the true delay line of two-stage parallel connection light when Optical Time Division Multiplexing is carried out.
Preferably, wavelength-division Multiplexing Unit includes wavelength multiplexer, delay line and wavelength demultiplexer in the system.Its medium wave
Multiplexing demultiplexing device long can be by knots such as array waveguide grating, cascading Mach-increasing Dare interferometer or cascade micro-ring resonators
Structure is realized.
Preferably, mode division multiplexing unit includes shunt, polarization converter, delay line and multi-mode coupler in the system.
Previous stage wavelength-division multiplex unit output light is divided into two-way, wherein light polarization is constant all the way, and another road light passes through polarization converter
It is changed into orthogonal polarization mode, this two-way light is divided into multichannel by shunt respectively again, by after different delays line length, then with
Multimode waveguide is coupled, and excites the different mode in multimode waveguide.
Preferably, the effect of polarization converter is to realize wave-guide polarization pattern from transverse electric field mode to vertical electric field in the system
The conversion of pattern (or in turn).The polarization converter can be made up of the ridge waveguide coupling of two different in width, when a ripple
When a certain polarization mode effective refractive index led is equal with another polarization mode effective refractive index of an other waveguide, i.e.,
Output light polarization mode there occurs transformation after coupling of the light between two waveguides, and coupling can be realized.
Preferably, multi-mode coupler is that multichannel different polarization light is different from an each several part width respectively in the system
Straight wave guide is coupled, and because straight wave guide each several part width is different, therefore can excite the pattern of different rank.Different in width waveguide
Transition by tapered transmission line realize, to ensure light low-loss propagation in the waveguide.
Preferably, multi-mode modulator is based on Mach-Zehnder interference structure in the system, and friendship is integrated with each interfere arm
Type PN junction is knitted, the depletion region of PN has overlapping with multiple patterns, so as to realize efficient modulation while to multiple patterns.
Preferably, pattern/wavelength (de) multiplexing unit in the system, respectively by a T roads pattern demultiplexer and T M road
The realization of parallel wavelength demultiplexer, low-repetition-frequency light pulse is demultiplexing as by high repetition frequency light pulse.
Preferably, photo detecting unit is made up of T × M parallel optoelectronic detector in the system, is converted optical signals to low
Fast electric signal.Photodetector makes vertical or horizontal PIN junction and comes real by silicon Epitaxial growth germanium or germanium silicon material
It is existing.
Compared with prior art, the beneficial effects of the invention are as follows：
1) time-division multiplexing unit, wavelength-division multiplex unit, mode division multiplexing unit, the multi-mode modulator that the present invention will be sequentially connected
Unit, mould decomposition multiplex unit, wavelength (de) multiplexing unit and photoelectric detection unit it is integrated on the same chip, chip size
Small, low in energy consumption, stability is high.
2) mode division multiplexing is increased on the basis of traditional time wavelength interlacing system, by three-level time division multiplex list
After unit, wavelength-division multiplex unit and mode division multiplexing unit, compared with chip input optical pulse, repetition rate improves M × N × T times,
Thus ultrahigh speed can be obtained uses pulse.The light pulse of multimode waveguide is entered into after the modulation of multi-mode modulator to input microwave
Signal is sampled, the pulse signal after modulation repetition rate is reduced to after mould decomposition multiplex unit before 1/T, then pass through
After wavelength (de) multiplexing unit again by its repetition rate be 1/M, opto-electronic conversion is carried out into photodetector array afterwards, by electric mould
Number converting unit carries out subsequent treatment.Greatly increase the repetition rate of sampling pulse.
Brief description of the drawings
Fig. 1 is the structural representation of the one embodiment of the present invention based on the integrated PADC systems of silicon substrate light.
Fig. 2 is the signal of the embodiment of parallel time-division multiplexing unit of the present invention based on the integrated PADC systems of silicon substrate light
Figure.
Fig. 3 is the signal of the embodiment of serial time-division multiplexing unit of the present invention based on the integrated PADC systems of silicon substrate light
Figure.
Fig. 4 is the schematic diagram of wavelength-division multiplex unit embodiment of the present invention based on the integrated PADC systems of silicon substrate light.
Fig. 5 is the signal of one embodiment of mode division multiplexing unit of the present invention based on the integrated PADC systems of silicon substrate light
Figure.
Fig. 6 is the signal of one embodiment of Multiple modes coupling unit of the present invention based on the integrated PADC systems of silicon substrate light
Figure.
Fig. 7 is one embodiment of intertexture type PN junction multi-mode modulator of the present invention based on the integrated PADC systems of silicon substrate light
Schematic diagram.
Specific embodiment
Embodiments of the invention are elaborated with reference to the accompanying drawings and examples, the present embodiment is with skill of the invention
Implemented premised on art scheme, given detailed implementation method and operating process, but protection scope of the present invention is not limited to
Following embodiments.
Fig. 1 is the structural representation of the one embodiment of the present invention based on the integrated PADC systems of silicon substrate light.As seen from the figure,
Photon modulus conversion chip of the present invention based on Si-based OEIC unit from left to right is followed successively by：Time-division multiplexing unit,
Wavelength-division multiplex unit, mode division multiplexing unit, multi-mode modulator, mould decomposition multiplex unit, wavelength-division demultiplexing unit, photoelectric detector
And electric AD conversion unit.Described time-division multiplexing unit is cascaded or in series by delay waveguide, described wavelength-division multiplex
Unit is made up of array waveguide grating, and described mode division multiplexing unit is made up of directional coupler, described multi-mode modulator by
Multimode waveguide Mach-Zehnder interferometer simultaneously embedded in multimode phase-modulator composition on both arms, and described pattern demultiplexing is single
It is first identical with described mode multiplexing unit, simply enter with output port conversely, described wavelength (de) multiplexing unit with it is described
Wavelength multiplexing unit it is identical, simply enter with output port conversely, described photoelectric detection unit germanium and is led to by being grown on silicon
Overdoping forms PIN diode and constitutes.Above-mentioned each unit is sequentially connected, and constitutes chip system in a complete slice.Chip is input into
Using mode-locked laser as light-pulse generator, repetition rate is 250MHz.First by concurrently or sequentially time-division multiplexing unit (such as
Shown in Fig. 2 and Fig. 3), input light is divided into behind 4 tunnels respectively through 0,1ns, 2ns and 3ns relative time-delay, then 4 tunnels are merged
To export all the way, the repetition rate for exporting pulse increases to 1GHz.Carry out wavelength-division multiplex (as shown in Figure 4) to signal again afterwards,
Input light is divided into 4 wavelength on frequency domain, respectively through after 0,0.25ns, 0.5ns and 0.75ns relative time-delay again
It is combined into and exports all the way, the repetition rate for exporting pulse increases to 4GHz.It is last to pass through mode division multiplexing unit (as shown in Figure 5) again,
The road light of input 1 is become 4 road light using polarization conversion and shunt, prolong by 0,1/16ns, 1/8ns and 3/16ns relative time
Lag, be coupled in multimode waveguide, excite 4 kinds of orthogonal modes (as shown in Figure 6), it is 16GHz that the repetition rate of pulse increases.Enter
The light pulse entered to multimode waveguide is sampled (as shown in Figure 7) after being modulated through multi-mode modulator to input microwave signal, is modulated
Frequency is reduced to 4GHz by signal afterwards after pattern demultiplexing unit, then by being reduced to its frequency after wavelength (de) multiplexing unit
1GHz, carries out opto-electronic conversion into photodetector array afterwards, and subsequent treatment is carried out by electric AD conversion unit.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although ginseng
The present invention has been described in detail according to preferred embodiment, it will be understood by those within the art that, can be to invention
Technical scheme is modified or equivalent, and without deviating from the spirit and scope of technical solution of the present invention, it all should cover
In the middle of scope of the presently claimed invention.
Claims (7)
1. a kind of photon modulus conversion chip integrated based on silicon light, it is characterised in that the chip includes time-division multiplexing unit, ripple
Divide Multiplexing Unit, mode division multiplexing unit, multi-mode modulator, pattern demultiplexing unit, wavelength (de) multiplexing unit and photodetection list
Unit, using CMOS integrated circuits compatible technology by described time-division multiplexing unit, wavelength-division multiplex unit, mode division multiplexing unit, many
Mould modulator, pattern demultiplexing unit, wavelength (de) multiplexing unit and photoelectric detection unit are integrated in same chip with being sequentially connected
On, constitute chip system in a complete slice.
2. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described time-division
Multiplexing Unit is cascaded or in series by delay waveguide, and input optical pulse is divided into N roads, carries out time delay at equal intervals per road, then
Again by when the N roads delayed merge into and export all the way, be original N times so as to light pulse repetition rate be increased；The described time-division
The parallel waveguides structure of Multiplexing Unit is made up of N bars length successively increased waveguide parallel connection, and described serial waveguiding structure is by more
The delay line cascade of level twin-guide is constituted.
3. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described wavelength-division
Multiplexing Unit is made up of multi-stage cascade Mach-Zehnder interferometer or array waveguide grating, and light pulse is divided into M wavelength, each
Wavelength by equal intervals when delay and be combined into again all the way, be original M times, described wavelength-division so as to light pulse repetition rate be increased
Multiplexing Unit is made up of cascade micro-ring resonator.
4. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described mould point
Multiplexing Unit, is made up of directional coupler, and input optical pulse is divided into T roads, per road by time delay at equal intervals, with multimode waveguide coupling
Close, excite T pattern in multimode waveguide, be original T times so as to light pulse repetition rate be increased.
5. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described multimode
Modulator is realized that the light pulse in input waveguide is divided equally the two of Mach-increasing Dare interferometer by Mach-increasing Dare interferometer
On individual arm, microwave signal is loaded on modulator, changes two phase differences of arm by PN junction, so as to realize to impulse amplitude
Modulation, the multiple pattern mould field regions of PN junction covering, realizes the homogeneous modulation to multiple patterns.
6. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described pattern
Demultiplexing unit and wavelength (de) multiplexing unit, respectively by a T roads pattern demultiplexer and T M roads parallel wavelength demultiplexer
Realize, high repetition frequency light pulse is demultiplexing as low-repetition-frequency light pulse；Described pattern demultiplexing unit and pattern are multiple
Structure with unit is identical, simply enters opposite with output port；Described wavelength (de) multiplexing unit and described wavelength multiplexing
Cellular construction is identical, simply enters opposite with output port.
7. the photon modulus conversion chip integrated based on silicon light according to claim 1, it is characterised in that described light is visited
Unit is surveyed, is made up of T × M parallel photodetector, the photodetector converts optical signals to low speed telecommunication number, described
Photodetector by silicon Epitaxial growth germanium or germanium silicon material, and make vertical or horizontal PIN junction and realize.
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| CN110012368A (en) * | 2019-03-27 | 2019-07-12 | 兰州大学 | A kind of silicon-based integrated on piece multimode optical switching system of compatible wavelength-division multiplex signals |
| CN110221387A (en) * | 2019-07-17 | 2019-09-10 | 中国科学院半导体研究所 | A kind of photon chip and preparation method thereof |
| CN110247728A (en) * | 2019-07-01 | 2019-09-17 | 光子算数(北京)科技有限责任公司 | A kind of photon neural network chip |
| CN110333638A (en) * | 2019-06-05 | 2019-10-15 | 上海交通大学 | The cascaded modulator chip of photon analog-to-digital conversion |
| CN111176053A (en) * | 2020-02-19 | 2020-05-19 | 上海交通大学 | Monolithic integrated optical analog-digital conversion system based on lithium niobate-silicon wafer and preparation method |
| CN111431659A (en) * | 2020-03-30 | 2020-07-17 | 南京信息工程大学 | Multi-granularity mixed optical orthogonal mode division multiplexing access system |
| CN114114534A (en) * | 2022-01-29 | 2022-03-01 | 中科鑫通微电子技术(北京)有限公司 | Optical pulse time delay device |
| CN114646941A (en) * | 2022-05-13 | 2022-06-21 | 武汉镭晟科技有限公司 | Electrically-controlled pulse laser for coherent laser radar |
| CN114815959A (en) * | 2022-06-27 | 2022-07-29 | 之江实验室 | Photon tensor calculation acceleration method and device based on wavelength division multiplexing |
| US11874497B2 (en) | 2019-07-17 | 2024-01-16 | Institute Of Semiconductors, Chinese Academy Of Sciences | Photonic chip and preparation method thereof |
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| CN110221387A (en) * | 2019-07-17 | 2019-09-10 | 中国科学院半导体研究所 | A kind of photon chip and preparation method thereof |
| CN110221387B (en) * | 2019-07-17 | 2020-08-04 | 中国科学院半导体研究所 | Photon chip and preparation method thereof |
| US11874497B2 (en) | 2019-07-17 | 2024-01-16 | Institute Of Semiconductors, Chinese Academy Of Sciences | Photonic chip and preparation method thereof |
| CN111176053A (en) * | 2020-02-19 | 2020-05-19 | 上海交通大学 | Monolithic integrated optical analog-digital conversion system based on lithium niobate-silicon wafer and preparation method |
| CN111431659A (en) * | 2020-03-30 | 2020-07-17 | 南京信息工程大学 | Multi-granularity mixed optical orthogonal mode division multiplexing access system |
| CN114114534A (en) * | 2022-01-29 | 2022-03-01 | 中科鑫通微电子技术(北京)有限公司 | Optical pulse time delay device |
| CN114646941A (en) * | 2022-05-13 | 2022-06-21 | 武汉镭晟科技有限公司 | Electrically-controlled pulse laser for coherent laser radar |
| CN114815959A (en) * | 2022-06-27 | 2022-07-29 | 之江实验室 | Photon tensor calculation acceleration method and device based on wavelength division multiplexing |
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