CN115840322A - Photon analog-to-digital conversion system and chip based on wavelength multiplexing and optical capture - Google Patents

Abstract

A photon analog-digital conversion system and a chip thereof based on wavelength multiplexing and optical capturing utilize a wavelength division multiplexer to compound N paths of continuous light with different wavelengths into one path, a sampled analog signal is loaded on the N paths of light paths, analog signals on the different wavelength light paths obtain different delay amounts through a delay regulation module, the delay amount difference of two adjacent paths is equal, and the time domain discretization of the N paths of analog signals with equal time intervals is realized by utilizing an optical capturing module. The invention greatly reduces the number of active devices such as an electro-optical modulator by utilizing passive devices such as a wavelength division multiplexer and the like, and can effectively reduce the complexity of a chip and the link loss, thereby improving the performance of a photon analog-to-digital conversion chip. The passive device is used for replacing the active device, so that the power consumption of the chip can be effectively reduced, and the stability is improved. The chip can increase the number of continuous laser light sources and the number of channels of a wavelength division multiplexer/demultiplexer through simple configuration, improve the sampling rate of the photon analog-to-digital conversion chip in multiples, and has the capability of large-scale expansion.

Description

Photon analog-to-digital conversion system and chip based on wavelength multiplexing and optical capturing

Technical Field

The invention relates to a photoelectron integration technology, in particular to a photon analog-to-digital conversion system and a chip based on wavelength multiplexing and optical capture.

Background

The information in the nature is a continuously changing analog signal, the analog signal is prone to distortion, poor in anti-interference capability, difficult to store and difficult to process in transmission and processing, and discretized digitization of the analog signal can solve the problems, so that the digitization era and the big data era are promoted. The analog-to-digital converter is a core device for connecting an analog signal and a digital signal. With the development and progress of the information society, the human needs for information amount and information rate are higher and higher, and the analog-to-digital conversion performance is continuously upgraded.

Conventional analog-to-digital converters are implemented based on electronic technology designs, i.e. electronic analog-to-digital converters. The electronic analog-to-digital converter is limited by factors such as aperture jitter and fuzzy, and is difficult to realize high-effective digit sampling quantification of high-frequency analog signals, and meanwhile, due to a high-speed electric clock generation technology, the sampling rate of the electronic analog-to-digital converter is difficult to further increase, and the traditional electronic analog-to-digital converter has encountered an electronic bottleneck. The photon analog-digital conversion technology born by combining the microwave photon technology has the advantages of large bandwidth, interference resistance, low jitter and the like, widens the input bandwidth of the analog-digital converter, improves the sampling rate and the effective digit, and becomes an important direction for the future development of the analog-digital converter.

Integration is an important means for improving the practicability of the photon analog-to-digital converter, the high-precision integration process can improve the channel consistency and the effective digit of the analog-to-digital converter, the miniaturization and the lightweight can widen the application scene, and the reliability and the stability of the photon analog-to-digital converter are enhanced. Researchers have proposed many schemes for the integration method of the photon analog-to-digital converter, however, most of the schemes only move the microwave photonic device to the chip, and the monolithic integration of the photon analog-to-digital conversion system is difficult to realize. On the other hand, there have been reported photon analog-to-digital conversion chips that still use a discrete large-volume mode-locked laser as a photon sampling pulse [ Mehta, N., et al., "An optical Sampled ADC in 3D Integrated Silicon-Photonics/65nm CMOS."2020IEEE Symposium on VLSI technology,2020,1-2 ]. In addition, the performance of the photonic analog-to-digital conversion chip is also affected by the loss of on-chip optical power, and as the insertion loss of the modulator is large, the optical link loss of the photonic analog-to-digital conversion system for cascading a plurality of modulators is increased accordingly [ an optical analog-to-digital conversion device based on multi-channel demultiplexing of the modulator, CN106990642B ], so that the optical power received by the photodetector is small and only low effective digits can be realized. Therefore, the monolithic integrated photon analog-to-digital converter is really realized, a mode-locked laser with huge volume is eliminated, the on-chip optical power loss is reduced, the conversion precision of the photon analog-to-digital conversion system is improved, and the practicability of the photon analog-to-digital converter can be improved to the maximum extent.

Disclosure of Invention

The invention aims to provide a solution of monolithic integration for high precision, miniaturization, light weight, high stability and low power consumption of a photon analog-to-digital conversion technology. The invention provides a photon analog-to-digital conversion system based on wavelength multiplexing and optical capture and a chip thereof. The photon analog-digital conversion chip utilizes a wavelength division multiplexer to compound N paths of continuous light with different wavelengths into one path, simultaneously loads sampled analog signals on the N paths of light paths, then enables the analog signals on the light paths with different wavelengths to obtain different delay amounts through a delay regulation module, the delay amount difference of two adjacent paths is equal, and utilizes an optical capture module to realize the time domain discretization of the analog signals with equal time intervals of the N paths. The photon analog-to-digital conversion chip flexibly utilizes passive devices such as a wavelength division multiplexer, the number of active devices such as an electro-optical modulator is greatly reduced, the complexity of the chip and the link loss can be effectively reduced, and therefore the performance of the photon analog-to-digital conversion chip is improved. Meanwhile, the passive device is used for replacing the active device, so that the power consumption of the chip can be effectively reduced, and the stability is improved. The chip can increase the number of continuous laser light sources and the number of channels of a wavelength division multiplexer/demultiplexer through simple configuration, improve the sampling rate of the photon analog-to-digital conversion chip in multiples, and has the capability of large-scale expansion. The invention replaces a mode-locked laser with continuous laser, combines a heterogeneous integration process, and is a solution for truly realizing a monolithic integration high-speed high-precision photon analog-to-digital conversion chip.

The technical scheme of the invention is as follows:

on one hand, the invention provides a photon analog-to-digital conversion system based on wavelength multiplexing and optical capturing, which comprises a light source array, a wavelength division multiplexer, a modulator, a delay regulation and control module, an optical capturing module, a wavelength division demultiplexer, a photoelectric detector array and an electronic analog-to-digital converter array which are connected in sequence;

the light source array generates N paths of continuous lasers with different wavelengths, the N paths of continuous lasers are compounded into one path through the wavelength division multiplexer, a sampled analog signal is modulated to one path of continuous lasers with N wavelengths through the modulator, the continuous lasers loaded with the sampled analog signal pass through the delay regulation module, so that the analog signals on the light paths with different wavelengths obtain different delay amounts, the delay amount difference of the two adjacent paths is equal, and an optical sampling pulse sequence with amplitude modulated by the sampled signal is generated at fs frequency through the optical capturing module, so that time domain discretization processing of the sampled signal loaded with different wavelengths is realized;

the wavelength division demultiplexer is a wavelength division multiplexer used reversely, N signals with different wavelengths subjected to synchronous optical capture and time domain dispersion are divided into N paths according to the wavelengths, photoelectric signals are converted into N paths of electric signals by the photoelectric detector array and then converted into N paths of electric digital signals by the electronic analog-to-digital converter array, and the N paths of electric digital signals are reconstructed and interleaved to obtain the information of the original electric analog signals.

The optical capturing module consists of a double parallel modulator, a cascade intensity modulator phase modulator or an optical microcavity, the light source array consists of N continuous laser light sources with different wavelengths, the delay regulation and control module consists of a delay wavelength division demultiplexer, a delay line array and a delay wavelength division multiplexer, the delay line array consists of N delay line units, the delay wavelength division multiplexer is a delay wavelength division demultiplexer used reversely, the photoelectric detector array consists of N photoelectric detectors, and the electronic analog-to-digital converter array consists of N electronic analog-to-digital converters.

The connection mode of each part is as follows: n output ends of the light source array are respectively connected with N channel ports of the wavelength division multiplexer, a wave combination output end of the wavelength division multiplexer is connected with an optical input end of the modulator, a sampled signal is input into a radio frequency input end of the modulator, an output end of the modulator is connected with an input end of the time delay wavelength division demultiplexer in the time delay regulation module, N output ends of the time delay wavelength division demultiplexer are connected with input ends of N time delay line units in the time delay line array, output ends of the N time delay line units are connected with N input ends of the time delay wavelength division multiplexer, an output end of the time delay wavelength division multiplexer is connected with an input end of the optical capture module, an output end of the optical capture module is connected with an input end of the wavelength division demultiplexer, N output ends of the wave delay line demultiplexer are connected with N input ends of the photoelectric detector array, N output ends of the photoelectric detector array are respectively connected with input ends of N electronic analog-to-digital converters, and N is a positive integer greater than or equal to 2.

On the other hand, the invention also provides a chip which comprises the photon analog-to-digital conversion system based on wavelength multiplexing and optical capturing and is characterized in that the light source array, the wavelength division multiplexer, the modulator, the delay regulation and control module, the optical capturing module, the wavelength division demultiplexer, the photoelectric detector array and the electronic analog-to-digital converter array are sequentially integrated on a single chip by using a heterogeneous integration process.

The light source array is realized by III-V family luminescent materials on a silicon platform by using a heterogeneous integration process.

The modulator is an electro-optical intensity modulator, the transmittance of the modulator is changed by changing the optical path difference of the upper arm and the lower arm of the Mach-Zehnder interferometer by using a plasma dispersion effect or an electro-optical effect, and the intensity modulation is carried out on the continuous laser, so that the sampled signal is modulated onto the continuous laser.

The wavelength division multiplexer and the wavelength division demultiplexer can be realized by using a cascade Mach-Zehnder interferometer, an array waveguide grating or a cascade micro-ring resonator.

The time delay wavelength division demultiplexer and the time delay wavelength division multiplexer can be realized by using a cascade Mach-Zehnder interferometer, an array waveguide grating or a cascade micro-ring resonator.

The optical delay line array is composed of optical delay lines with different physical lengths, and is used for delaying and adjusting optical signals with different channels and different wavelengths to generate different delay amounts.

The optical capture module is used for generating an optical sampling pulse sequence with the amplitude modulated by the sampled signal, and can adopt but not limited to a double parallel modulator, a cascade phase modulator and intensity modulator, a cascade intensity modulator, an optical microcavity and other schemes.

The photoelectric detector array is composed of N photoelectric detectors and used for converting optical signals into electric signals, and the photoelectric detectors are realized by epitaxially growing germanium or germanium-silicon materials on silicon and manufacturing longitudinal or transverse PIN junctions.

Compared with the prior art, the invention has the following advantages:

the method comprises the following steps of 1, replacing a mode-locked laser with continuous laser to serve as a light source of a photon analog-to-digital conversion chip, and combining a heterogeneous integration process to truly realize all photonic analog-to-digital conversion chips integrated by photoelectric devices in a single chip mode, so that the integration level of the photonic analog-to-digital conversion chip is remarkably improved, the size of the chip is reduced, and the practicability and stability of the photonic analog-to-digital conversion chip are improved.

2, the photon analog-to-digital conversion method provided by the invention greatly reduces the number of active devices such as an electro-optical modulator and the like in the traditional photon analog-to-digital conversion system by combining the continuous laser light source array, the wavelength division multiplexer and other passive devices, and can effectively reduce the complexity and the link loss of a chip, thereby improving the performance of the photon analog-to-digital conversion chip. In addition, the passive device is used for replacing an active device, so that the heat productivity of the photon analog-to-digital conversion chip can be greatly reduced, the power consumption of the chip is effectively reduced, and the stability of the chip is improved.

3, the optical capture module simultaneously realizes time domain discretization on a plurality of channels of sampled signals, thereby improving the sampling rate of the chip, greatly improving the time domain discretization synchronism of each channel and improving the conversion precision of the photon analog-to-digital conversion chip.

And 4, by utilizing the high-precision characteristic of the integration process, the optical path between each channel of the photon analog-to-digital conversion system can be strictly controlled, the channel mismatch caused by the inconsistency of the optical paths between the channels is greatly reduced, and the conversion precision of the photon analog-to-digital conversion chip is improved.

5, the photon analog-digital conversion system provided by the invention is based on the continuous laser light source array and the wavelength multiplexing method, can increase the number of the continuous laser light sources in the light source array and the number of the channels of the wavelength division multiplexer/demultiplexer through simple configuration, can increase the sampling rate of the photon analog-digital conversion chip by times under the condition that the single-channel sampling rate of the back-end electronic analog-digital converter is fixed, and has the capability of easy large-scale expansion.

Drawings

Fig. 1 is a schematic structural diagram of a photonic analog-to-digital conversion chip based on wavelength multiplexing and optical trapping, wherein (a) is an overall architecture diagram, and (b) is an architecture diagram of a delay regulation module.

Fig. 2 is a schematic illustration of direct bonding of group iii-v materials to silicon wafers using a heterogeneous integration process.

FIG. 3 is a diagram of three WDM architectures with WDM's in reverse use; wherein, (a) is based on wavelength division multiplexer and wavelength division demultiplexer of the cascade Mach-Zehnder interferometer; (b) The wavelength division multiplexer and the wavelength division demultiplexer are based on any waveguide grating; (c) The wavelength division multiplexer and the wavelength division demultiplexer are based on the cascade connection of the microring resonators.

Fig. 4 is a schematic diagram of an embodiment of a modulator, where (a) is a mach-zehnder intensity modulator architecture diagram, (b) is a phase modulation architecture diagram of upper and lower arms of the mach-zehnder intensity modulator, and (c) is a schematic diagram of doping a ridge waveguide to form a PN junction.

Fig. 5 is a schematic diagram of an embodiment of an optical trapping module, wherein (a) is an embodiment of an optical trapping module with cascaded intensity and phase modulators, and (b) is an embodiment of an optical trapping module with dual parallel modulators.

Detailed Description

The following provides a specific embodiment of the invention with reference to the attached drawings. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a process are given, but the scope of the present invention is not limited to the following embodiments.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a photon analog-to-digital conversion chip based on wavelength multiplexing and optical capturing according to the present invention, and it can be seen from the figure that an architecture thereof is sequentially composed of a light source array 1, a wavelength division multiplexer 2, a modulator 3, a delay regulation module 4, an optical capturing module 5, a wavelength division demultiplexer 6, a photodetector array 7, and an electronic analog-to-digital converter array 8. The light source array 1 consists of N continuous laser light sources 1-1 with different wavelengths, the wavelength division multiplexer 2 consists of a cascade Mach-Zehnder interferometer, an arrayed waveguide grating or a cascade micro-ring resonator, the wavelength division demultiplexer 6 is the wavelength division multiplexer 2 used reversely, as shown in figure 1 (b), the delay regulation and control module 4 consists of a delay wavelength division demultiplexer 4-1, a delay line array 4-2 and a delay wavelength division multiplexer 4-3, the delay line array 4-2 consists of N delay line units 4-2-1, the delay wavelength division demultiplexer 4-1 consists of a cascade Mach-Zehnder interferometer, an arrayed waveguide grating or a cascade micro-ring resonator, the delay wavelength division multiplexer 4-3 is the delay wavelength division demultiplexer 4-1 used reversely, the optical capture module 5 consists of a double parallel modulator, or a cascade intensity modulator phase modulator or an optical microcavity, the photoelectric detector array 7 consists of N analog-digital converters formed by doping PIN growth on silicon, and forming a PIN analog-digital converter through a silicon, and digital converter 8 consists of N electronic diodes. The connection mode of each part is as follows: n output ends of the light source array 1 are respectively connected with N channel ports of the wavelength division multiplexer 2, a wave combination output end of the wavelength division multiplexer 2 is connected with an optical input end of the modulator 3, a sampled signal is input into a radio frequency input end of the modulator 3, an output end of the modulator 3 is connected with an input end of a delay wavelength division demultiplexer 4-1 in the delay regulation and control module 4, N output ends of the delay wavelength division demultiplexer 4-1 are connected with input ends of N delay line units 4-2-1 in the delay line array 4-2, output ends of the N delay line units 4-2-1 are connected with N input ends of the delay wavelength division multiplexer 4-3, an output end of the delay wavelength division multiplexer 4-3 is connected with an input end of the optical capture module 5, an output end of the optical capture module 5 is connected with an input end of the wavelength division demultiplexer 6, N output ends of the wavelength division demultiplexer 6 are connected with N input ends of the photoelectric detector array 7, N output ends of the photoelectric detector array 7 are respectively connected with input ends of N electronic analog-to-digital converters 8 in the electronic analog-to-digital converter array, wherein N is a positive integer greater than or equal to 2.

N paths of continuous laser with different wavelengths generated by a light source array 1 are combined into one path through a wavelength division multiplexer 2 and input into a modulator 3, a sampled signal is modulated onto one path of continuous laser with N wavelengths through the modulator 3, the continuous laser loaded with the sampled signal enters a delay regulation module 4, the continuous laser is decomposed into N paths of optical signals through a delay wavelength division demultiplexer 4-1, the N paths of optical signals are controlled by N delay line units 4-2-1 to delay different delay amounts respectively, the relative delay between adjacent channels is 1/Nfs, each path of optical signal after delay is output into an optical capturing module 5 through a delay wavelength division multiplexer 4-3 in a combined mode, the optical capturing module 5 generates an optical sampling pulse sequence with the amplitude modulated by the sampled signal at the frequency of fs, and therefore time domain discretization processing of the sampled signal loaded by different wavelengths is achieved. The optical signal after time domain discretization is divided into N paths according to the wavelength again through the wavelength division demultiplexer 6, N signals with different wavelengths sampled by synchronous pulses are divided into N paths again, photoelectric conversion is realized by the photoelectric detector array 7 respectively to obtain N paths of electric signals, N paths of electric digital signals are obtained through N electronic analog-to-digital converters, and the N paths of electric digital signals are reconstructed and interleaved to obtain the information of the original electric analog signals.

The light source array 1 bonds III-V group materials on a silicon wafer through a heterogeneous integration method to perform monolithic integration of a photon analog-to-digital conversion chip, the bonding technology includes but is not limited to direct bonding, eutectic bonding, anodic bonding, thermocompression bonding and ultrasonic bonding, and the following provides a specific implementation method of the direct bonding technology: as shown in fig. 2, after cleaning, oxygen plasma treatment, wet wafer surface treatment for direct bonding, annealing at 250-300 ℃ under 1MPa, etching to remove InP substrate, etc., silicon and III-V form strong covalent bonds, and bond together by van der waals force or hydrogen bond, thereby monolithically integrating the light source array 1 and other photonic analog-to-digital conversion chip microwave photonic devices.

The wavelength division multiplexer 2, the delay wavelength division multiplexer 4-3, the wavelength division demultiplexer 6 and the delay wavelength division demultiplexer 4-1 are used for combining and dividing laser with different wavelengths, the wavelength division multiplexer 2 and the delay wavelength division multiplexer 4-3 are the wavelength division demultiplexer 6 and the delay wavelength division demultiplexer 4-1 which are used reversely, and the structure of the wavelength division multiplexer includes but is not limited to a wavelength division multiplexer (fig. 3 (a)) of a cascade Mach-Zehnder interferometer, a wavelength division multiplexer (fig. 3 (b)) of any waveguide grating and a wavelength division multiplexer (fig. 3 (c)) based on cascade of micro-ring resonators.

The modulator 3 is composed of a silicon-based mach-zehnder intensity modulator (fig. 4 (a)), phase modulators (fig. 4 (b)) are added to the upper and lower arms of the mach-zehnder interferometer, a PIN junction (fig. 4 (c)) is formed by doping the ridge waveguide, the refractive index of the upper and lower arms is adjusted by applying a carrier dispersion effect to affect an optical path difference, the transmittance of the modulator is changed, and the intensity of light is modulated.

The delay line array 4-2 is composed of delay line lines with different physical lengths, and is used for carrying out delay adjustment on different delay quantities generated by optical signals with different channels and different wavelengths.

The optical capture module 5 is used to generate an optical sampling pulse sequence whose amplitude is modulated by the sampled signal, and its scheme can adopt, but is not limited to, a cascade phase modulator and an intensity modulator (fig. 5 (a)), or a dual-parallel modulator (fig. 5 (b)), etc.

The photodetector array 7 is composed of N photodetectors, and is configured to convert an optical signal into an electrical signal, and the photodetectors are implemented by epitaxially growing a germanium or germanium-silicon material on silicon and fabricating a longitudinal or transverse PIN junction.

Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.

Claims (11)

1. A photon analog-to-digital conversion system based on wavelength multiplexing and optical capturing is characterized by comprising a light source array (1), a wavelength division multiplexer (2), a modulator (3), a delay regulation and control module (4), an optical capturing module (5), a wavelength division demultiplexer (6), a photoelectric detector array (7) and an electronic analog-to-digital converter array (8) which are sequentially connected;

the light source array (1) generates N paths of continuous laser with different wavelengths, the N paths of continuous laser are compounded into one path through the wavelength division multiplexer (2), a sampled analog signal is modulated to one path of continuous laser with N wavelengths through the modulator (3), the continuous laser loaded with the sampled analog signal passes through the delay regulation module (4), so that the analog signals on different wavelength light paths obtain different delay amounts, the delay amount difference of the two adjacent paths is equal, and an optical sampling pulse sequence with amplitude modulated by the sampled signal is generated at fs frequency through the optical capturing module (5), so that time domain discretization processing of the sampled signal loaded with different wavelengths is realized;

the wavelength division demultiplexer (6) is a wavelength division multiplexer (2) used reversely, N signals with different wavelengths which are subjected to synchronous optical capture and time domain dispersion are divided into N paths according to the wavelength, the photoelectric detector array (7) converts photoelectric signals into N paths of electric signals, the electric signals are converted into N paths of electric signals through the electronic analog-to-digital converter array (8), and the N paths of electric signals are reconstructed and interleaved to obtain information of original electric analog signals;

the optical capturing module (5) consists of a double parallel modulator, a cascade intensity modulator phase modulator or an optical microcavity, the light source array (1) consists of N continuous laser light sources with different wavelengths, the delay regulating and controlling module (4) consists of a delay wavelength division demultiplexer (4-1), a delay line array (4-2) and a delay wavelength division multiplexer (4-3), the delay line array consists of N delay line units (4-2-1), the delay wavelength division multiplexer (4-3) is a delay wavelength division demultiplexer (4-1) used reversely, the photoelectric array detector (7) consists of N photoelectric detectors, and the electronic analog-to-digital converter array consists of N electronic analog-to-digital converters;

the connection mode of each part is as follows: n output ends of the light source array (1) are respectively connected with N channel ports of the wavelength division multiplexer (2), a wave combination output end of the wavelength division multiplexer (2) is connected with an optical input end of the modulator (3), a sampled signal is input into a radio frequency input end of the modulator (3), an output end of the modulator (3) is connected with an input end of a delay wavelength division demultiplexer (4-1) in the delay regulation module (4), N output ends of the delay wavelength division demultiplexer (4-1) are connected with input ends of N delay line units (4-2-1) in the delay line array (4-2), output ends of the N delay line units (4-2-1) are connected with N input ends of the delay wavelength division demultiplexer (4-3), an output end of the delay wavelength division multiplexer (4-3) is connected with an input end of the optical capture module (5), an output end of the optical capture module (5) is connected with an input end of the wavelength division demultiplexer (6), N output ends of the wavelength division demultiplexer (6) are connected with input ends of the photoelectric detector array (7), N output ends of the photoelectric detector array (7) are respectively connected with an input end of the N analog-to an integer number of the N electronic analog-to-digital converter, and the N analog-digital converter is equal to an integer number of the N, wherein the analog-digital converter is equal to 8.

2. A photon analog-to-digital conversion chip containing the photon analog-to-digital conversion coefficient based on wavelength multiplexing and optical capturing of claim 1, wherein the light source array (1), the wavelength division multiplexer (2), the modulator (3), the delay regulation module (4), the optical capturing module (5), the wavelength division demultiplexer (6), the photodetector array (7) and the electronic analog-to-digital converter array (8) are sequentially integrated on a single chip by using a heterogeneous integration process.

3. The photonic analog-to-digital conversion chip of claim 2, wherein the light source array (1) is monolithically integrated by bonding a iii-v material to a silicon wafer by a heterogeneous integration method.

4. The photon analog-to-digital conversion chip according to claim 2, characterized in that the modulator (3) is an electro-optical intensity modulator, and the sampled signal is modulated on continuous laser by changing the optical path difference between the upper arm and the lower arm of the Mach-Zehnder interferometer by using a plasma dispersion effect or an electro-optical effect and changing the transmittance of the modulator.

5. The photon analog-to-digital conversion chip according to claim 2, wherein the wavelength division multiplexer (2) and the wavelength division demultiplexer (6) are a wavelength division multiplexer and a wavelength division demultiplexer based on a cascaded Mach-Zehnder interferometer, a wavelength division multiplexer and a wavelength division demultiplexer based on an arbitrary waveguide grating, or a wavelength division multiplexer and a wavelength division demultiplexer based on a cascaded micro-ring resonator.

6. The photon analog-to-digital conversion chip according to claim 2, wherein the delayed wavelength division demultiplexer (4-1) and the delayed wavelength division multiplexer (4-3) are a wavelength division multiplexer and a wavelength division demultiplexer based on a cascaded mach-zehnder interferometer, a wavelength division multiplexer and a wavelength division demultiplexer based on an arbitrary waveguide grating, or a wavelength division multiplexer and a wavelength division demultiplexer based on a cascade of micro-ring resonators.

7. The photonic analog-to-digital conversion chip of claim 2, wherein the delay line array (4-2) is composed of N optical delay lines (4-2-1) with different physical lengths, and delay adjustment is performed on different delay amounts generated by optical signals with different channels and different wavelengths.

8. The photonic analog-to-digital conversion chip of claim 2, wherein the optical capture module (5) is configured to generate a sequence of optical sampling pulses whose amplitudes are modulated by the sampled signal, using a dual-parallel modulator, a cascaded phase modulator and intensity modulator, a cascaded intensity modulator, or an optical microcavity.

9. The photonic analog-to-digital conversion chip according to claim 2, characterized in that the photodetector array (7) is composed of N PIN diodes formed by growing germanium or silicon germanium on silicon and doping.

10. The photonic analog-to-digital conversion chip of any of claims 2 to 9, wherein the light source array bonds the group iii-v material to the silicon wafer for heterogeneous integration by a bonding technique, the bonding method including direct bonding, eutectic bonding, anodic bonding, thermocompression bonding, or ultrasonic bonding.

11. The wavelength multiplexing and optical trapping based photonic analog-to-digital conversion system according to any one of claims 1 to 10, wherein optical paths of other optical links in the photonic analog-to-digital conversion chip are the same except for the N-channel channels and the delay line.

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