CN111273464B - Lithium niobate-silicon wafer-based photoelectric monolithic integration system - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/011—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour in optical waveguides, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
Abstract
A lithium niobate-silicon wafer-based photoelectric monolithic integration system comprises an integrated optical circuit module, a photoelectric conversion module and an integrated circuit module which are integrated on the same substrate through a semiconductor CMOS process, so that the packaging among the modules is avoided. The method realizes the real monolithic integration, and respectively performs the transmission and processing of optical signals, the conversion of the optical signals into electric signals and the transmission and processing of the electric signals. The invention gives play to the excellent electro-optic property of the lithium niobate material and the advantages of the silicon-based material, thereby leading the photoelectric system to have more excellent performance.
Description
Technical Field
The invention belongs to the technical field of photoelectric heterogeneous integration, and particularly relates to a photoelectric monolithic integration system and an interconnection method of functional devices in the system.
Technical Field
By using the electronic integration technology, a complex electronic circuit system can be realized on an integrated chip, high-precision signal processing is carried out, and signal storage is realized. However, electronic processing systems suffer from clock, cross talk and loss due to capacitance, inductance and resistance distribution parameters of the electronic circuitry. By utilizing the photonic integration technology, the photonic system which takes light as an information carrier can effectively overcome the defects of an electronic processing system, and realize low power consumption and high-speed signal transmission and processing. The optoelectronic integration technology combining the electronic integration technology and the photonic integration technology can realize higher system processing performance.
The integrated chip using the on-chip electrical interconnection and optical interconnection technology can realize various functions of discrete electronic or photonic devices on the nanometer and micrometer scales, and overcomes the defects of discrete systems in volume, power consumption and stability. The electronic integrated system can realize high-precision processing and storage functions of analog signals and digital signals. The photonic integrated system can realize low power consumption and high-speed signal transmission and processing. Document 1 (see Atabaki, am h., et al, "Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip." Nature 556.7701(2018):349.) utilizes silicon-based integration techniques to implement optoelectronic monolithic integration systems. Document 2 (method of three-dimensional photoelectric integration using backend cmos process, https:// pages. storage. googleapis. com/ce/d1/3b/fb3313e4b8067 a/cn10395634040a. pdf) realizes three-dimensional photoelectric integration using backend process. In a photonic integrated system, a modulator plays an important role, but a silicon-based modulator has the defects of large loss and large power consumption. The lithium niobate material has good linear electro-optic effect and can overcome the defects of large power consumption and large loss of the silicon-based modulator. Therefore, the lithium niobate-silicon wafer is combined with the lithium niobate material and the silicon material to realize a photoelectric monolithic integrated system with more excellent performance.
Disclosure of Invention
The invention provides a lithium niobate-silicon wafer-based photoelectric monolithic integration system, which can exert the excellent electro-optic performance of a lithium niobate material and the advantages of a silicon-based material, integrate a multifunctional photoelectric system, avoid the encapsulation between modules and realize the integration of a monolithic photoelectric system with excellent performance.
The technical solution of the invention is as follows:
a lithium niobate-silicon wafer-based photoelectric monolithic integration system is characterized in that: the silicon substrate comprises a silicon substrate, a silicon dioxide insulating layer, a lithium niobate wafer layer, a silicon wafer layer, a germanium film layer, a silicon dioxide insulating layer and a silicon layer from bottom to top, wherein the germanium film layer and the silicon layer are electrically interconnected through a metal through hole. The integrated system comprises an integrated optical circuit module, a photoelectric converter module and an integrated circuit module, wherein the integrated optical circuit module comprises a wavelength division multiplexer, a thermo-optical modulator and an electro-optical modulator, the wavelength division multiplexer, the thermo-optical modulator and the electro-optical modulator are connected through optical waveguides, the photoelectric conversion module comprises a detector, the integrated circuit module comprises a transimpedance amplifier, an analog-to-digital converter, a digital processor and a digital-to-analog converter, the transimpedance amplifier, the analog-to-digital converter, the digital processor and the digital-to-analog converter are connected through circuits, the output end of the digital-to-analog converter is connected with an electrode of the integrated optical circuit module through a metal lead, the wavelength division multiplexer inputs light waves with various different wavelengths from an external laser source to be coupled into the optical waveguide, and then enters the thermo-optical modulator and the electro-optical modulator through the optical waveguide, respectively carrying out low-speed modulation and high-speed modulation; the modulated optical signal enters the detector through the optical waveguide to realize photoelectric conversion, and a high-speed electrical signal is output; the electric signal is processed by the transimpedance amplifier, the analog-to-digital converter, the digital signal processor and the analog-to-digital converter, and is transmitted to the electrode of the integrated optical circuit module through the metal lead to be respectively input into the thermo-optic modulator and the electro-optic modulator to be respectively subjected to thermo-optic modulation and electro-optic modulator.
Preparing a photonic device on the lithium niobate wafer layer and the silicon wafer layer to form an integrated optical path module; depositing a germanium film layer on the silicon wafer layer to prepare the detector and form the photoelectric conversion module; and realizing a silicon-based CMOS integrated circuit on the silicon wafer layer, wherein the silicon-based CMOS integrated circuit forms the photoelectric conversion module.
The integrated optical circuit module comprises an optical waveguide, a coupler, a passive photonic device of a (de) wavelength division multiplexer, a thermo-optic modulator, an electro-optic modulator and a detector, wherein the coupler is a tapered coupler which is positioned between the thermo-optic modulator, the detector and the electro-optic modulator and is used for transmitting optical signals in the lithium niobate wafer layer and the silicon wafer layer; the photoelectric conversion module converts the optical signal into an electric signal; the integrated circuit module processes the electric signal.
The photoelectric integrated system chip input light source of the lithium niobate-silicon wafer is provided by an external laser source, and the light output of the external laser source is connected with the light input port of the integrated optical circuit module; the optical output port of the integrated optical circuit module is connected with the optical input port of the photoelectric conversion module; the electrical output port of the photoelectric conversion module is connected with the electrical input port of the integrated circuit module; the electrical output port of the integrated circuit module is connected with the electrical input port of the integrated optical circuit module; the final signal processing result is output by an electrical output port of the integrated circuit module.
The invention has the following technical effects:
the lithium niobate-silicon wafer-based photoelectric monolithic integration system comprises an integrated optical circuit module, a photoelectric conversion module and an integrated circuit module which are integrated on the same substrate through a semiconductor CMOS (complementary metal oxide semiconductor) process, so that the packaging among the modules is avoided. The method realizes the real monolithic integration, and respectively performs the transmission and processing of optical signals, the conversion of the optical signals into electric signals and the transmission and processing of the electric signals. The invention gives play to the excellent electro-optic property of the lithium niobate material and the advantages of the silicon-based material, thereby leading the photoelectric system to have more excellent performance.
Drawings
FIG. 1 is a schematic diagram of the architecture of a lithium niobate-silicon wafer-based optoelectronic monolithic integrated system according to the present invention
FIG. 2 is a cross-sectional view of a lithium niobate-silicon wafer-based optoelectronic monolithic integrated system of the present invention
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples, and specific embodiments and structures will be given, but the scope of the present invention is not limited to the examples described below.
Fig. 1 is a lithium niobate-silicon wafer-based optoelectronic monolithic integration system, and fig. 2 is a cross-sectional view of the lithium niobate-silicon wafer-based optoelectronic monolithic integration system of the present invention, as can be seen from the figure, the lithium niobate-silicon wafer-based optoelectronic monolithic integration system of the present invention is characterized in that: the silicon substrate 13, the silicon dioxide insulating layer 14, the lithium niobate wafer layer 15, the silicon wafer layer 16, the germanium thin film layer 17, the silicon dioxide insulating layer 14 and the silicon layer 18 are arranged from bottom to top, and the germanium thin film layer 17 is electrically interconnected with the silicon layer 18 through a metal through hole 19. The integrated system comprises an integrated optical circuit module 2, an optical-to-electrical converter module 3 and an integrated circuit module 4, wherein the integrated optical circuit module 2 comprises a wavelength division multiplexer 5, a thermo-optical modulator 6 and an electro-optical modulator 7, the wavelength division multiplexer 5, the thermo-optical modulator 6 and the electro-optical modulator 7 are connected through optical waveguides, the electro-optical converter module 3 comprises a detector 8, the integrated circuit module 4 comprises a transimpedance amplifier 9, an analog-to-digital converter 10, a digital processor 11 and a digital-to-analog converter 12, the transimpedance amplifier 9, the analog-to-digital converter 10, the digital processor 11 and the digital-to-analog converter 12 are connected through circuits, an output end of the digital-to-analog converter 12 is connected with an electrode of the integrated optical circuit 2 through a metal wire, the wavelength division multiplexer 5 inputs a plurality of optical waves with different wavelengths from an external laser source 1 to be coupled into the optical waveguides, the light enters the thermo-optic modulator 6 and the electro-optic modulator 7 through the optical waveguide, and low-speed modulation and high-speed modulation are respectively carried out; the modulated optical signal enters the detector 8 through the optical waveguide to realize photoelectric conversion, and a high-speed electrical signal is output; the electric signal is processed by the transimpedance amplifier 9, the analog-to-digital converter 10, the digital signal processor 11 and the analog-to-digital converter 12, and then is transmitted to the electrode of the integrated optical circuit 2 through the metal wire to be respectively input into the thermo-optic modulator 6 and the electro-optic modulator 7 to be respectively subjected to thermo-optic modulation and electro-optic modulation;
preparing a photonic device on the lithium niobate wafer layer 15 and the silicon wafer layer 16 to form an integrated optical circuit module 2; preparing the detector 8 by depositing a germanium thin film layer 17 on the silicon wafer layer 16 to form the photoelectric conversion module 3; a silicon-based CMOS integrated circuit is implemented on the silicon layer 18, which forms the integrated circuit module 4.
The integrated optical circuit module comprises an optical waveguide, a coupler, a passive photonic device of a (de) wavelength division multiplexer 5, a thermo-optic modulator 6, an electro-optic modulator 7 and a detector 8, wherein the coupler is a tapered coupler which is positioned between the thermo-optic modulator 6, the detector 8 and the electro-optic modulator 7 and is used for transmitting optical signals in the lithium niobate wafer layer 15 and the silicon wafer layer 16; the photoelectric conversion module 3 converts the optical signal into an electrical signal; the integrated circuit module 4 processes the electrical signals.
An input light source of a lithium niobate-silicon wafer photoelectric integrated system chip is provided by an external laser source 1, and the light output of the external laser source 1 is connected with the light input port of the integrated optical circuit module 2; the optical output port of the integrated optical circuit module 2 is connected with the optical input port of the photoelectric conversion module 3; the electrical output port of the photoelectric conversion module 3 is connected with the electrical input port of the integrated circuit module 4; the electrical output port of the integrated circuit module 4 is connected with the electrical input port of the integrated optical circuit module 2; the final signal processing result is output by an electrical output port of the integrated circuit module 4.
Preparing a silicon waveguide with the height of 220 nanometers and the width of 450-500 nanometers by etching the silicon wafer layer, and forming a lithium niobate-silicon waveguide with high refractive index difference with the lithium niobate wafer layer; when a silicon waveguide with the height of 70 nanometers and the width of 300 nanometers is prepared by etching the silicon wafer layer, the lithium niobate-silicon waveguide with the low refractive index difference is formed with the lithium niobate wafer. For the lithium niobate-silicon waveguide with high refractive index difference, most of light waves are bound in the silicon waveguide, and the lithium niobate-silicon waveguide can be used for preparing passive photonic devices such as couplers, (de) wavelength division multiplexers, thermo-optic modulators and the like; for the lithium niobate-silicon waveguide with low refractive index difference, the lithium niobate wafer with most of the light waves bound can be used for preparing the electro-optical modulator 7 due to the good electro-optical effect of the lithium niobate material.
Claims (3)
1. A lithium niobate-silicon wafer-based photoelectric monolithic integration system is characterized in that: include silicon substrate layer (13), first silica insulating layer, lithium niobate wafer layer (15), silicon wafer layer (16), germanium thin film layer (17), second silica insulating layer and silicon layer (18) from bottom to top, germanium thin film layer (17) link to each other with silicon layer (18) through metal through-hole (19), integrated system include integrated optical circuit module (2), photoelectric conversion module (3) and integrated circuit module (4), integrated optical circuit module (2) including wavelength division multiplexer (5), thermo-optic modulator (6) and electro-optic modulator (7), wavelength division multiplexer (5), thermo-optic modulator (6) and electro-optic modulator (7) between pass through optical waveguide connection, photoelectric conversion module (3) including detector (8), integrated circuit module (4) including trans-impedance amplifier (9), The optical fiber laser comprises an analog-to-digital converter (10), a digital processor (11) and a digital-to-analog converter (12), wherein the transimpedance amplifier (9), the analog-to-digital converter (10), the digital processor (11) and the digital-to-analog converter (12) are connected through a circuit, the output end of the digital-to-analog converter (12) is connected with the electrode of the integrated optical circuit module (2) through a metal wire, the wavelength division multiplexer (5) inputs multiple light waves with different wavelengths from an external laser source (1) and couples the light waves into the optical waveguide, and the light waves enter the thermo-optical modulator (6) and the electro-optical modulator (7) through the optical waveguide to perform low-speed modulation and high-speed modulation respectively; the modulated optical signal enters the detector (8) through the optical waveguide to realize photoelectric conversion, and a high-speed electric signal is output; the electric signal is processed by the trans-impedance amplifier (9), the analog-to-digital converter (10), the digital processor (11) and the digital-to-analog converter (12), and is transmitted to the electrode of the integrated optical circuit module (2) through the metal wire to be respectively input into the thermo-optical modulator (6) and the electro-optical modulator (7) to be respectively subjected to thermo-optical modulation and electro-optical modulation.
2. The lithium niobate-silicon wafer based optoelectronic monolithic integrated system of claim 1, wherein: preparing a photonic device on the lithium niobate wafer layer (15) and the silicon wafer layer (16) to form an integrated optical circuit module (2); preparing said detector (8) by depositing a germanium thin film layer (17) on said silicon wafer layer (16), forming said photoelectric conversion module (3), implementing a silicon-based CMOS integrated circuit on said silicon layer (18), said silicon-based CMOS integrated circuit forming said integrated circuit module (4);
the integrated optical circuit module (2) comprises an optical waveguide, a coupler, a (de) wavelength division multiplexer (5), a thermo-optic modulator (6), an electro-optic modulator (7) and a detector (8), wherein the coupler is a tapered coupler which is positioned between the thermo-optic modulator (6), the detector (8) and the electro-optic modulator (7) and is used for transmitting optical signals in the lithium niobate wafer layer (15) and the silicon wafer layer (16); the photoelectric conversion module (3) converts the optical signal into an electric signal; the integrated circuit module (4) processes the electric signals.
3. The lithium niobate-silicon wafer based optoelectronic monolithic integration system of claim 1 or 2, wherein: an input light source of a lithium niobate-silicon wafer photoelectric integrated system chip is provided by an external laser source (1), and the light output of the external laser source (1) is connected with the light input port of the integrated optical circuit module (2); the optical output port of the integrated optical circuit module (2) is connected with the optical input port of the photoelectric conversion module (3); the electrical output port of the photoelectric conversion module (3) is connected with the electrical input port of the integrated circuit module (4); the electrical output port of the integrated circuit module (4) is connected with the electrical input port of the integrated optical circuit module (2); the final signal processing result is output by an electrical output port of the integrated circuit module (4).
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