CN117406337A - Heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding - Google Patents

Heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding Download PDF

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CN117406337A
CN117406337A CN202210781446.7A CN202210781446A CN117406337A CN 117406337 A CN117406337 A CN 117406337A CN 202210781446 A CN202210781446 A CN 202210781446A CN 117406337 A CN117406337 A CN 117406337A
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silicon
wafer
layer
silicon nitride
film layer
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邹卫文
张慕言
王静
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Shanghai Jiaotong University
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Shanghai Jiaotong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
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  • Optical Integrated Circuits (AREA)

Abstract

The invention provides a heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding, wherein electronic devices are integrated on a silicon substrate layer or a silicon film layer and are used for forming an electronic circuit to process high-speed electric signals; the silicon passive photon device is integrated on the silicon film layer and used for transmitting optical information; the silicon nitride passive photon device is integrated on the silicon nitride film layer and is used for transmitting optical information; the silicon-germanium photodetector is integrated on the silicon film layer-germanium film layer and is used for converting optical signals into electric signals; the laser is integrated on the III-V wafer layer and is used for generating optical signals; the silicon nitride-lithium niobate electro-optical modulator is integrated on the lithium niobate wafer layer-silicon nitride film layer and is used for modulating the optical signals. The invention adopts a wafer bonding method, has smaller integrated area, can reduce the material cost and simultaneously improves the utilization rate of the area of the photoelectric chip; and the back-end process is adopted to avoid the failure caused by thermal mismatch between wafers, and the reliability, flexibility and integration level of the chip are improved.

Description

Heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding
Technical Field
The invention relates to the technical field of monolithic photoelectric fusion heterogeneous integration, in particular to a heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding.
Background
With the development of information technology and the continuous improvement of the demand for data transmission speed, the electric transmission mode gradually encounters the bottleneck, the problems of low speed, high energy consumption and the like exist, photons have the advantages of high bandwidth, low jitter and the like, and the optical and electric fusion becomes a great technical development trend in combination with the advantages of technology maturity and the like of an electronic circuit, and the core technology focuses on chip-level photoelectric integration and simultaneously exerts the advantages of electricity and light through an integration technology. The photoelectric fusion chip comprises a photoelectric device and an electronic circuit, wherein the photoelectric device comprises a laser, a modulator, a photoelectric detector and the like, and the electronic circuit comprises a driving circuit and an amplifier circuit which are formed by field effect transistors. The integrated implementation mode of the photoelectric fusion chip comprises single-chip integration and hybrid integration, so that the hybrid photoelectric integration research is the greatest at home and abroad at present, each chip module can be independently manufactured, the process is relatively simple, the implementation is easy, the integration level is relatively low, the integrated chip is contrary to the development trend of the integrated photoelectric system, and meanwhile, the problems of high process cost, parasitic effect and the like are also caused.
The optoelectronic device and the electronic circuit are integrated on the same substrate by utilizing the monolithic photoelectric integration technology, so that the electric and optical interconnection distance can be reduced, the adverse effect of parasitic parameters on an integrated system is greatly reduced, and the stability and reliability of the integrated system are improved. Meanwhile, the integration level can be improved through the on-chip integrated laser, and low-power consumption and high-speed signal transmission and processing are realized. The adoption of the monolithic integration technology accords with the trend of the integration of the photoelectric chip and has a plurality of advantages.
At present, the most mature of the monolithic photoelectric integration technology is silicon-based monolithic integration technology and indium phosphide monolithic integration technology. The two material platforms are characterized in that: indium phosphide belongs to a second-generation semiconductor material, and has the advantages of high saturated electron drift velocity, strong radiation resistance, good thermal conductivity and high photoelectric conversion efficiency, but has the advantages of higher cost, large loss and difficulty in large-scale integration. The silicon-based material has the advantages of compatibility of Complementary Metal Oxide Semiconductor (CMOS) process, low cost, high compactness, mature process and the like, is favorable for realizing large-scale integration of the photoelectric chip, and is the most widely applied material of the single-chip integrated photoelectric fusion chip at present. Advantages of various materials such as excellent electro-optical performance of lithium niobate, low loss, low polarization sensitivity, high process tolerance, high refractive index of silicon material and the like can be exerted by monolithically integrating various materials such as silicon nitride, lithium niobate, silicon oxide, III-V, and the like. Currently, the monolithically integrated multi-material system photoelectric fusion chip system is mostly based on wafer bonding, for example, the Chinese patent application with the publication number of CN111474745B is a multi-material system based photoelectric monolithic integration system, the wafer bonding belongs to a front-end process, and high-temperature processes such as oxidation, PECVD, LPCVD and the like exist in a heterogeneous integration process, so that thermal mismatch between interfaces of lithium niobate and other materials is easy to occur, thereby causing reliability problems. The wafer bonding integrated area is large, and the high temperature process tolerance is small, so that the bonding position and the process sequence are fixed, and the photoelectric fusion chips with different functions are difficult to flexibly realize.
No description or report of similar technology is found at present, and similar data at home and abroad are not collected.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding, which organically combines a plurality of materials by utilizing wafer bonding and other integrated methods, plays the advantages of flexible wafer bonding, high Wen Rongren degrees and high integration level, and realizes the full integration of a high-linearity and large-bandwidth modulator, a laser, a high-compactness passive photon device and an electronic device. Meanwhile, the photoelectric fusion chip with excellent performance, stable process and flexible design is realized by effectively combining a multi-material system and a multi-integration method system.
The invention provides a heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding, which comprises: a wafer substrate and devices integrated on the wafer substrate;
the wafer substrate includes: the silicon substrate layer, the first silicon oxide layer, the silicon film layer and the second silicon oxide layer are sequentially arranged from bottom to top, a silicon nitride film layer and a germanium film layer which are arranged up and down are embedded in the second silicon oxide layer, the positions of the silicon nitride film layer and the germanium film layer are staggered and provided with distances, a III-V wafer layer and a lithium niobate wafer layer are arranged on the upper surface of the second silicon oxide layer, and the III-V wafer layer and the lithium niobate wafer layer are arranged in parallel and provided with distances;
the device comprises: electronic devices, silicon passive photonic devices, silicon nitride passive photonic devices, silicon-germanium photodetectors, lasers, and silicon nitride-lithium niobate electro-optical modulators; wherein:
the electronic device is integrated on the silicon substrate layer or the silicon film layer and is used for forming an electronic circuit to process high-speed electric signals;
the silicon passive photonic device is integrated on the silicon film layer and is used for transmitting optical information;
the silicon nitride passive photonic device is integrated on the silicon nitride film layer and is used for transmitting optical information;
the silicon-germanium photoelectric detector is integrated on the silicon film layer-germanium film layer and is used for converting optical signals into electric signals;
the laser is integrated on the III-V wafer layer and is used for generating optical signals;
the silicon nitride-lithium niobate electro-optical modulator is integrated on a lithium niobate wafer layer-silicon nitride film layer and is used for modulating optical signals.
Optionally, the electronic device is formed on a Metal Oxide Semiconductor (MOS) basis.
Optionally, the silicon passive photonic devices are interconnected by a silicon waveguide; the silicon nitride passive photonic device and the silicon passive photonic device are subjected to high-efficiency optical coupling through an interlayer coupler arranged between the silicon thin film layer and the silicon nitride thin film layer; the silicon passive photon device is connected with the silicon-germanium photoelectric detector through a silicon waveguide to realize optical interconnection; the silicon nitride passive photonic devices are interconnected through silicon nitride waveguides; the silicon nitride passive photonic device and the silicon nitride-lithium niobate electro-optical modulator are optically interconnected through an interlayer coupler arranged between the silicon nitride film layer and the lithium niobate wafer layer; the silicon nitride-lithium niobate electro-optical modulator is in high-efficiency optical coupling with the laser through an interlayer coupler arranged between the silicon nitride film layer and the III-V wafer layer; the silicon nitride-lithium niobate electro-optical modulator and the silicon-germanium photodetector are respectively connected with an electronic circuit through an internal interconnection wire for realizing internal electrical interconnection.
Optionally, the first silicon oxide layer and the second silicon oxide layer are prepared by an oxidation technique.
Optionally, the silicon thin film layer is prepared by a polysilicon deposition technique.
Optionally, the electronic device is fabricated on the silicon substrate layer or the silicon thin film layer by doping and waveguide etching techniques.
Optionally, the silicon passive photonic device is fabricated on the silicon thin film layer by waveguide etching technology.
Optionally, the silicon-germanium photodetector is formed by epitaxially growing, thin film deposition, and doping techniques to produce a doped germanium film on the silicon thin film layer.
Optionally, the silicon nitride film layer is generated by film deposition above the silicon film layer and is coated inside the second silicon dioxide layer.
Optionally, the silicon nitride passive photonic device is prepared on the silicon nitride film layer by a waveguide etching technology.
Optionally, the internal interconnection line is a copper interconnection line, the interconnection line groove is reserved in the first silicon oxide layer and the second silicon oxide layer by photoetching through a damascene wiring process, then metal is electroplated and inlaid, and finally the metal outside the groove is removed by polishing.
Optionally, the III-V wafer layer and the lithium niobate wafer layer are bonded to the second silicon dioxide layer by wafer bonding techniques, respectively.
Optionally, the silicon nitride-lithium niobate electro-optic modulator is prepared by a waveguide etching technology.
Optionally, the silicon nitride passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and delay line; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
the directional coupler or the multimode interferometer is connected with a delay line.
Optionally, the silicon passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and microring; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
the directional coupler or multimode interferometer is connected to the micro-ring.
Optionally, the electronic circuit includes: an amplifier circuit, a driving circuit, an analog-to-digital converter circuit, a digital-to-analog converter circuit, and a digital processing circuit; wherein:
the amplifier circuit is interconnected with the analog-to-digital converter circuit through a metal wire;
the analog-to-digital converter circuit is interconnected with the digital processing circuit through a metal wire;
the digital processing circuit is interconnected with the digital-to-analog converter circuit through a metal wire;
the digital-to-analog converter circuit is interconnected with the driving circuit by metal lines.
Optionally, the silicon nitride-lithium niobate electro-optic modulator is interconnected with a driving circuit through an internal interconnection line; the silicon-germanium photodetector is interconnected with the amplifier circuit by an internal interconnect line.
Optionally, the system further comprises a metal electrode disposed on the second silicon dioxide layer and interconnected with the electronic circuit.
Optionally, etching the second silicon dioxide layer by using a windowing technology, so that the metal electrode is in a bare state, and internal and external electrical interconnection is realized.
Optionally, the first silicon oxide layer and the second silicon oxide layer serve as isolation layers, and the size of the isolation layers is 0-1 micrometers.
The heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding provided by the invention is a monolithically integrated photoelectric fusion chip realized by a plurality of integration methods, and has at least one of the following beneficial effects compared with the prior art:
compared with the wafer bonding method, the wafer bonding method has smaller integrated area, can reduce the material cost, and simultaneously improves the utilization rate of the area of the photoelectric chip, thereby providing possibility for improving the integration level of devices.
The invention adopts the lithium niobate wafer and the III-V wafer, the bonding position is more flexible, and the requirements of different photoelectric chips can be more effectively met.
The wafer bonding in the invention belongs to the back-end process, can effectively avoid thermal mismatch generated in the chip manufacturing process, increases the product stability and yield, simultaneously ensures more flexible processing process and wider selection space, and supports high-temperature processes such as PECVD, LPCVD and the like.
The invention supports the formation of electronic devices by adopting the traditional bulk silicon process, can effectively reduce the cost, and can be compatible with the mature silicon photo-process.
The invention adopts the insulating layer windowing technology, and can expose the metal electrode to realize electrical interconnection.
The Damascus wiring technology in the invention can realize metal copper interconnection wiring in the photoelectric chip, replace metal aluminum wiring in the traditional photoelectric chip, effectively reduce interconnection delay and electromigration effect and improve stability and speed of electric signal transmission.
The invention adopts the wafer bonding integration technology to realize heterogeneous monolithic photoelectric fusion chips, the wafer bonding belongs to the back-end process, and the back-end process can avoid the failure caused by the thermal mismatch between wafers, thereby effectively improving the reliability, the flexibility and the integration level of the chips.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, given with reference to the accompanying drawings in which:
FIG. 1 is a cross-sectional view of a wafer substrate in accordance with a preferred embodiment of the present invention.
Fig. 2 is a cross-sectional view of a wafer substrate and devices thereon in accordance with a preferred embodiment of the present invention, wherein (a) is a thin film silicon transistor hetero-photofusion chip and (b) is a bulk silicon transistor hetero-photofusion chip.
In the figure, 1 is a silicon substrate layer, 2 is a silicon oxide layer, 2-1 is a first silicon oxide layer, 2-2 is a second silicon oxide layer, 3 is a silicon thin film layer, 4 is a germanium thin film layer, 5 is a silicon nitride thin film layer, 6 is a III-V wafer layer, 7 is a lithium niobate wafer layer, 8 is a silicon-germanium detector, 9 is a silicon passive photonic device, 10 is a silicon nitride passive photonic device, 11 is a lithium niobate-silicon nitride electro-optic modulator, 12 is a III-V laser, 13 is a thin film silicon metal oxide semiconductor transistor (MOS), 14 is a silicon nitride-silicon nitride interlayer coupler, 15 is a silicon nitride-silicon interlayer coupler, 16 is a III-V nitride interlayer coupler, 17 is a bulk silicon P-type metal oxide semiconductor transistor (MOS), 18 is a bulk silicon N-type metal oxide semiconductor transistor (MOS), and 19 is a bulk silicon N-channel metal oxide semiconductor field effect transistor.
Detailed Description
The following describes embodiments of the present invention in detail: the embodiment is implemented on the premise of the technical scheme of the invention, and detailed implementation modes and specific operation processes are given. It should be noted that variations and modifications can be made by those skilled in the art without departing from the spirit of the invention, which falls within the scope of the invention.
The embodiment of the invention provides a heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding, which organically combines a plurality of materials by utilizing wafer bonding and other integrated methods, plays the advantages of flexible wafer bonding, high Wen Rongren degrees and high integration level, and realizes the full integration of a high-linearity and large-bandwidth modulator, a laser, a high-compactness passive photon device and an electronic device. Meanwhile, the photoelectric fusion chip with excellent performance, stable process and flexible design is realized by effectively combining a multi-material system and a multi-integration method system.
As shown in fig. 1, the heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding provided in this embodiment may include: a wafer substrate and devices integrated on the wafer substrate; further:
the wafer substrate includes: the silicon substrate layer 1, the first silicon oxide layer, the silicon film layer 3 and the second silicon dioxide layer are sequentially arranged from bottom to top, a silicon nitride film layer 5 and a germanium film layer 4 which are arranged up and down are embedded in the second silicon dioxide layer, the positions of the silicon nitride film layer 5 and the germanium film layer 4 are staggered and provided with distances, a III-V wafer layer 6 and a lithium niobate wafer layer 7 are arranged on the upper surface of the second silicon dioxide layer, and the III-V wafer layer 6 and the lithium niobate wafer layer 7 are arranged in parallel and provided with distances;
the device comprises: electronic devices, silicon passive photonic devices, silicon nitride passive photonic devices, silicon-germanium photodetectors, lasers, and silicon nitride-lithium niobate electro-optical modulators; wherein:
the electronic device is integrated on the silicon substrate layer 1 or the silicon thin film layer 3 and is used for forming an electronic circuit to process high-speed electric signals;
the silicon passive photon device is integrated on the silicon film layer 3 and used for transmitting optical information;
the silicon nitride passive photonic device is integrated on the silicon nitride film layer 5 and is used for transmitting optical information;
the silicon-germanium photodetector is integrated on the silicon film layer-germanium film layer and is used for converting optical signals into electric signals;
the laser is integrated on the III-V wafer layer 6 and is used for generating optical signals;
the silicon nitride-lithium niobate electro-optical modulator is integrated on the lithium niobate wafer layer-silicon nitride film layer and is used for modulating the optical signals.
In this embodiment, the silicon passive photonic devices are interconnected by silicon waveguides; the silicon nitride passive photonic device and the silicon passive photonic device are subjected to high-efficiency optical coupling through an interlayer coupler arranged between the silicon thin film layers; the silicon passive photon device is connected with the silicon-germanium photoelectric detector through a silicon waveguide to realize optical interconnection; the silicon nitride passive photonic devices are interconnected through silicon nitride waveguides; the silicon nitride passive photon device and the silicon nitride-lithium niobate electro-optical modulator are connected by an interlayer coupler arranged between the silicon nitride film layer and the lithium niobate wafer layer; the silicon nitride-lithium niobate electro-optical modulator is in high-efficiency optical coupling with the laser through an interlayer coupler arranged between the silicon nitride film layer and the III-V wafer layer; the silicon nitride-lithium niobate electro-optical modulator and the silicon-germanium photodetector are respectively connected with the electronic circuit through internal interconnection wires for realizing internal electrical interconnection.
In one embodiment, the electronic device is formed on the basis of metal oxide semiconductor transistors (MOS) and further comprises portions of an electronic circuit.
In a preferred embodiment, the first silicon oxide layer and the second silicon oxide layer are prepared by an oxidation technique.
In a preferred embodiment, the silicon thin film layer is prepared by a polysilicon deposition technique.
In a preferred embodiment, the electronic device is fabricated on a silicon substrate layer or a silicon thin film layer by doping and waveguide etching techniques.
In a preferred embodiment, the silicon passive photonic device is fabricated in a silicon thin film layer by waveguide etching techniques.
In a preferred embodiment, the silicon-germanium photodetector is formed by epitaxially growing, thin film deposition, and doping techniques to produce a doped germanium film on the silicon film layer.
In a preferred embodiment, a silicon nitride film layer is formed over the silicon film layer by a film deposition technique and is encapsulated within the second silicon oxide layer.
In a preferred embodiment, the silicon nitride passive photonic device is fabricated on a silicon nitride film layer by waveguide etching techniques.
In a preferred embodiment, the internal interconnection line is a copper interconnection line, and the interconnection line groove is reserved in the first silicon oxide layer and the second silicon oxide layer by photoetching through a Damascus wiring process, then the metal is electroplated and inlaid, and finally the metal outside the groove is removed by polishing.
In a preferred embodiment, the III-V wafer layer and the lithium niobate wafer layer are bonded to the second silicon dioxide layer by wafer bonding techniques, respectively.
In a preferred embodiment, the silicon nitride-lithium niobate electro-optic modulator is fabricated by waveguide etching techniques.
In a preferred embodiment, a silicon nitride passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and delay line; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
a directional coupler or multimode interferometer is connected to the delay line.
In a preferred embodiment, a silicon passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and microring; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
a directional coupler or multimode interferometer is connected to the micro-ring.
In a preferred embodiment, the electronic circuit comprises: an amplifier circuit, a driving circuit, an analog-to-digital converter circuit, a digital-to-analog converter circuit, and a digital processing circuit; wherein:
the amplifier circuit is interconnected with the analog-to-digital converter circuit through a metal wire;
the analog-to-digital converter circuit is interconnected with the digital processing circuit through a metal wire;
the digital processing circuit is interconnected with the digital-to-analog converter circuit through a metal wire;
the digital-to-analog converter circuit is interconnected with the driving circuit by metal lines.
In a preferred embodiment, the silicon nitride-lithium niobate electro-optic modulator is interconnected with the drive circuit by an internal interconnect line; the silicon-germanium photodetector is interconnected with the amplifier circuit by an interconnect line.
In a preferred embodiment, the system further comprises a metal electrode disposed on the second silicon dioxide layer and interconnected with the electronic circuit.
In a preferred embodiment, the second silicon dioxide layer is etched by a windowing technique, so that the metal electrode is exposed, and internal and external electrical interconnection is realized.
In a preferred embodiment, the first silicon oxide layer and the second silicon oxide layer act as spacers, having a size of 0 to 1 μm.
The heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding provided by the embodiment of the invention is characterized in that a silicon oxide layer is arranged between a silicon substrate layer and a silicon film layer and outside a germanium film layer 4 and a silicon nitride film layer 5 to serve as isolation layers; a silicon substrate layer or a silicon thin film layer integrating metal oxide semiconductor transistors (MOS) to constitute an electronic device for high-speed information processing; the silicon thin film layer integrates a silicon passive photon device and is used for transmitting optical information; the silicon thin film layer-germanium thin film layer integrated silicon-germanium photoelectric detector is used for converting optical signals into electric signals; the silicon nitride film layer integrates a silicon nitride passive photon device and is used for transmitting optical information; the III-V wafer layer integrated laser is used for generating optical signals; the lithium niobate wafer layer-silicon nitride layer integrates a silicon nitride-lithium niobate electro-optical modulator to realize modulation of optical signals.
The silicon passive photonic devices are interconnected through silicon waveguides; a silicon-silicon nitride interlayer coupler is arranged between the silicon thin film layer and the silicon nitride layer and is used for high-efficiency optical coupling between the silicon nitride passive photonic device and the silicon passive photonic device; the silicon passive photon device is connected with the silicon-germanium photoelectric detector through a silicon waveguide to realize optical interconnection; the silicon nitride passive photonic devices are interconnected through silicon nitride waveguides; the silicon nitride passive photon device and the lithium niobate-silicon nitride electro-optical modulator realize optical interconnection through a silicon nitride-silicon nitride interlayer coupler; the lithium niobate-silicon nitride electro-optical modulator realizes high-efficiency optical coupling with a laser through a silicon nitride-III-V interlayer coupler; the lithium niobate-silicon nitride electro-optic modulator is connected with a metal oxide semiconductor transistor (MOS) transistor through an internal (copper) interconnection wire; the silicon-germanium photodetector is connected with a metal oxide semiconductor transistor (MOS) through an internal (copper) interconnection wire; the top of the chip is electrically interconnected with the inside and the outside of the chip through etching windowing.
The modulator, laser and detector form an active photonic device.
The heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding provided by the embodiment of the invention adopts technologies such as oxidation, polysilicon deposition, doping, waveguide etching, epitaxial growth, film deposition (including inductively coupled plasma chemical vapor deposition, plasma enhanced chemical vapor deposition and low-pressure chemical vapor deposition), plasma Enhanced Chemical Vapor Deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), metal through holes, metal deposition, damascus wiring technology, wafer bonding, windowing and the like to prepare the wafer substrate and devices on the wafer substrate.
Generating a silicon oxide layer by adopting an oxidation technology; producing a silicon film layer by adopting a polysilicon deposition technology; manufacturing metal oxide semiconductor transistors (MOS) on the silicon thin film layer by adopting doping, waveguide etching and other technologies so as to form electronic circuits such as driving circuits, amplifying circuits and the like; manufacturing a silicon-based passive device on the silicon film layer by adopting a waveguide etching technology; generating a germanium-doped film on the silicon film layer by adopting epitaxial growth, film deposition and doping technologies, and forming a silicon-germanium photoelectric detector; producing a silicon nitride film layer on the silicon film layer by film deposition including LPCVD, PECVD and the like; integrating a silicon nitride passive photon device on the silicon nitride film layer by a waveguide etching technology; forming a metal electrode inside and outside the chip by adopting a metal through hole and metal deposition; adopting a Damascus wiring process, carrying out photoetching on a silicon oxide layer to reserve an interconnection groove, then electroplating inlaid metal, and finally polishing to remove metal outside the groove to form a copper interconnection line; bonding the III-V group wafer and the lithium niobate wafer to the silicon oxide layer by adopting a wafer bonding technology; the silicon nitride-lithium niobate electro-optical modulator is prepared by adopting a waveguide etching technology. And etching the silicon oxide layer by adopting a windowing technology to expose the metal electrode so as to realize internal and external electrical interconnection. The heterogeneous photoelectric fusion integrated system is prepared through the process steps and the integration method.
The heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding provided by the embodiment of the invention can exert the advantages of excellent electro-optical performance of lithium niobate materials, low loss, low polarization sensitivity, high process tolerance and high refractive index of silicon materials and the advantages of direct gaps of III-V materials, and can integrate optoelectronic devices such as lasers, electro-optical modulators, passive photon devices, detectors and the like, and electronic circuits such as driving circuits and amplifier circuits. The wafer bonding lithium niobate wafer and the III-V wafer are used, and the back-end process of wafer bonding can avoid thermal mismatch between lithium niobate and silicon oxide caused by a high-temperature process and simultaneously lead the bonding position to be more flexible; the metal electrode may be exposed using a silicon oxide window technique to achieve a stable electrical interconnection; growing thin film silicon by using a silicon oxide slotting technology to realize a photonic device; in addition, the compatibility with the traditional bulk silicon process has the advantage of reducing the cost. The photoelectric monolithic heterogeneous integrated fusion chip with excellent performance and stable process can be realized through organic fusion of a junction multi-material system and various integration modes.
The following detailed description of the invention and the two specific examples of application will provide detailed embodiments and constructions, but the scope of the invention is not limited to the following examples.
Fig. 1 is a cross-sectional view of an initial wafer substrate (silicon-silicon oxide-lithium niobate) structure in two specific examples of application, including, from bottom to top, a silicon substrate layer 1, a silicon thin film layer 3, a germanium thin film layer 4, a silicon nitride thin film layer 5, a group iii-v die layer 6, and a lithium niobate die layer 7, as shown in fig. 1. The silicon oxide layer 2 is arranged between the silicon substrate layer 1 and the silicon film layer 3 and coated outside the silicon nitride film layer 5 and the germanium film layer 7 and is used as an isolation buffer layer, wherein the characteristic size of the isolation buffer layer is 0-1 micrometers; the lithium niobate wafer layer 7-silicon nitride film layer 5 integrates a modulator; the silicon substrate layer 1 integrates electronic devices; the silicon thin film layer 2 integrates a silicon passive photonic device; the silicon nitride thin film layer 5 integrates a silicon nitride passive photonic device.
In one embodiment, a thin film silicon transistor hetero-photo-fusion chip structure is described as an example.
The cross-sectional view of the thin film silicon transistor photo-fusion hetero-chip structure shown in fig. 2 (a) includes a silicon-germanium photodetector 8, a silicon passive photonic device 9, a silicon nitride passive photonic device 10, a lithium niobate-silicon nitride electro-optic modulator 11, a group iii-v laser 12, a thin film silicon Metal Oxide Semiconductor (MOS) transistor 13, a silicon nitride-silicon nitride interlayer coupler 14, a silicon nitride-silicon interlayer coupler 15, and a group iii-silicon nitride interlayer coupler.
The silicon passive photonic devices 9 are interconnected by silicon waveguides; the silicon nitride passive photonic device 10 is connected with the silicon passive photonic device 9 through a silicon nitride-silicon interlayer coupler 15; the silicon passive photon device 9 is connected with the silicon-germanium photoelectric detector 8 through a silicon waveguide to realize optical interconnection; the silicon nitride passive photonic device 10 is interconnected by a silicon nitride waveguide; the silicon nitride passive photon device 10 and the lithium niobate-silicon nitride electro-optical modulator 11 realize optical interconnection through a silicon nitride-silicon nitride interlayer coupler 14; the lithium niobate-silicon nitride electro-optical modulator 11 realizes high-efficiency optical coupling between the laser and the active photonic device through the silicon nitride-III-V interlayer coupler 16; the lithium niobate-silicon nitride electro-optic modulator 11 is connected to a thin film silicon metal oxide semiconductor transistor (MOS) 13 by internal copper interconnect lines; the silicon-germanium photodetector 8 is connected to a thin film silicon metal oxide semiconductor transistor (MOS) 13 by internal copper interconnect lines; the top of the chip is electrically interconnected with the inside and the outside of the chip through etching windowing.
In another specific application example, a bulk silicon transistor heterogeneous photo-fusion chip structure is described as an example.
The cross-sectional view of the bulk silicon transistor photo-fusion hetero-chip shown in fig. 2 (b) includes a silicon-germanium photodetector 8, a silicon passive photonic device 9, a silicon nitride passive photonic device 10, a lithium niobate-silicon nitride electro-optic modulator 11, a group iii-v laser 12, a silicon nitride-silicon nitride interlayer coupler 14, a silicon nitride-silicon interlayer coupler 15, a group iii-silicon nitride interlayer coupler silicon 16, a bulk silicon P-type metal oxide semiconductor transistor (MOS) 17, and a bulk silicon N-type metal oxide semiconductor transistor (MOS) 18. The chip is etched with substrate silicon to form a groove, and silicon oxide filling and polysilicon deposition are carried out to form film silicon. The silicon passive photonic devices 9 are interconnected by silicon waveguides; the silicon passive photon device 9 is connected with the silicon-germanium photoelectric detector 8 through a silicon waveguide to realize optical interconnection; the silicon nitride passive photonic device 10 is connected with the silicon passive photonic device 9 through a silicon nitride-silicon interlayer coupler 15 to realize optical interconnection; the silicon nitride passive photonic device 10 realizes optical interconnection with the lithium niobate-silicon nitride electro-optical modulator 11 through the silicon nitride-silicon nitride interlayer coupler 14; the silicon nitride passive photonic device 10 is interconnected by a silicon nitride waveguide; the laser 12 is optically interconnected with the lithium niobate-silicon nitride electro-optic modulator 11 through a group III-V nitride interlayer coupler 16; the lithium niobate-silicon nitride electro-optic modulator 11 is connected to a bulk silicon P-type metal oxide semiconductor transistor (MOS) 17 or a bulk silicon N-type metal oxide semiconductor transistor (MOS) 18 by internal copper interconnect lines; the silicon-germanium photodetector 8 is connected to a bulk silicon P-type metal oxide semiconductor transistor (MOS) 17 or a bulk silicon N-type metal oxide semiconductor transistor (MOS) 18 by internal copper interconnect lines;
according to the heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding, which is provided by the embodiment of the invention, the wafer bonding method is adopted, compared with the wafer bonding method, the integrated area is smaller, the material cost can be reduced, the utilization rate of the area of the photoelectric chip is improved, and the possibility is provided for improving the integration level of devices; the bonding positions of the lithium niobate wafer and the III-V wafer are more flexible, so that the requirements of different photoelectric chips can be met more effectively; wafer bonding belongs to a back-end process, can effectively avoid thermal mismatch generated in the chip manufacturing process, increases product stability and yield, simultaneously enables the processing process to be more flexible, enables the selection space to be wider, and supports CMOS high-temperature processes such as PECVD, LPCVD and the like; the electronic device is supported to be formed by adopting the traditional bulk silicon process, so that the cost can be effectively reduced; the insulating layer windowing technology is adopted, so that the metal electrode can be exposed to realize electrical interconnection; the Damascus wiring technology can realize metal copper interconnection wiring in the photoelectric chip, replace metal aluminum wiring in the traditional photoelectric chip, effectively reduce interconnection delay and electromigration effect and improve stability and speed of electric signal transmission; the wafer bonding integration technology is adopted to realize heterogeneous monolithic photoelectric fusion chips, and the reliability, flexibility and integration level of the chips are effectively improved.
The foregoing embodiments of the present invention are not all well known in the art.
The foregoing describes specific embodiments of the present invention. It is to be understood that the invention is not limited to the particular embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the claims without affecting the spirit of the invention.

Claims (10)

1. A wafer-to-wafer bond-based heterogeneous photofusion integrated system, comprising: a wafer substrate and devices integrated on the wafer substrate; the method is characterized in that:
the wafer substrate includes: the silicon substrate layer (1), the first silicon oxide layer (2-1), the silicon film layer (3) and the second silicon oxide layer (2-2) are sequentially arranged from bottom to top, the silicon nitride film layer (5) and the germanium film layer (4) which are arranged up and down are embedded in the second silicon oxide layer (2-2), the positions of the silicon nitride film layer (5) and the germanium film layer (4) are staggered and provided with distances, a III-V wafer layer (6) and a lithium niobate wafer layer (7) are arranged on the upper surface of the second silicon oxide layer (2-2), and the III-V wafer layer (6) and the lithium niobate wafer layer (7) are arranged in parallel and provided with distances;
the device comprises: electronic devices, silicon passive photonic devices, silicon nitride passive photonic devices, silicon-germanium photodetectors, lasers, and silicon nitride-lithium niobate electro-optical modulators; wherein:
the electronic device is integrated on the silicon substrate layer (1) or the silicon film layer (3) and is used for forming an electronic circuit to process high-speed electric signals;
the silicon passive photonic device is integrated on the silicon thin film layer (3) and is used for optical information transmission;
the silicon nitride passive photonic device is integrated on the silicon nitride film layer (5) and is used for optical information transmission;
the silicon-germanium photoelectric detector is integrated on the silicon film layer-germanium film layer and is used for converting optical signals into electric signals;
the laser is integrated on the III-V wafer layer (6) and is used for generating optical signals;
the silicon nitride-lithium niobate electro-optical modulator is integrated on a lithium niobate wafer layer-silicon nitride film layer and is used for modulating optical signals.
2. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 1, wherein:
the silicon passive photonic devices are interconnected through silicon waveguides;
the silicon nitride passive photonic device and the silicon passive photonic device are subjected to high-efficiency optical coupling through an interlayer coupler arranged between the silicon thin film layer (3) and the silicon nitride thin film layer (5);
the silicon passive photon device is connected with the silicon-germanium photoelectric detector through a silicon waveguide to realize optical interconnection;
the silicon nitride passive photonic devices are interconnected through silicon nitride waveguides;
the silicon nitride passive photonic device and the silicon nitride-lithium niobate electro-optical modulator are optically interconnected through an interlayer coupler arranged between the silicon nitride film layer (5) and the lithium niobate wafer layer (7);
the silicon nitride-lithium niobate electro-optical modulator is in high-efficiency optical coupling with the laser through an interlayer coupler arranged between the silicon nitride film layer (5) and the III-V wafer layer (6);
the silicon nitride-lithium niobate electro-optical modulator and the silicon-germanium photodetector are respectively connected with the electronic circuit through internal interconnection wires for realizing internal electrical interconnection.
3. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 2, wherein:
the first silicon oxide layer and the second silicon oxide layer are prepared by an oxidation technology;
the silicon film layer (3) is prepared by a polysilicon deposition technology;
the electronic device is manufactured on the silicon substrate layer (1) or the silicon thin film layer (3) by doping and waveguide etching technology;
the silicon passive photonic device is manufactured on the silicon film layer (3) through a waveguide etching technology;
the silicon-germanium photodetector is formed by generating a doped germanium film on the silicon film layer (3) through epitaxial growth, film deposition and doping technology;
the silicon nitride film layer (5) is generated above the silicon film layer (3) through film deposition and is coated inside the second silicon dioxide layer;
the silicon nitride passive photonic device is prepared on the silicon nitride film layer (5) through a waveguide etching technology;
the internal interconnection line is made of copper interconnection line, interconnection line grooves are reserved in the first silicon oxide layer and the second silicon oxide layer by photoetching through a Damascus wiring process, metal is electroplated and inlaid, and finally metal outside the grooves is removed by polishing;
the III-V wafer layer (6) and the lithium niobate wafer layer (7) are bonded to the second silicon dioxide layer by wafer bonding techniques, respectively;
the silicon nitride-lithium niobate electro-optical modulator is prepared by a waveguide etching technology;
4. the wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 1, wherein: the silicon nitride passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and delay line; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
the directional coupler or the multimode interferometer is connected with a delay line.
5. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 1, wherein: the silicon passive photonic device includes: directional coupler or multimode interferometer, wavelength division multiplexer, mach-Zehnder interferometer, and microring; wherein:
the Mach-Zehnder interferometer is connected with the wavelength division multiplexer;
the wavelength division multiplexer is connected with the directional coupler or the multimode interferometer;
the directional coupler or multimode interferometer is connected to the micro-ring.
6. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 1, wherein: the electronic circuit includes: an amplifier circuit, a driving circuit, an analog-to-digital converter circuit, a digital-to-analog converter circuit, and a digital processing circuit; wherein:
the amplifier circuit is interconnected with the analog-to-digital converter circuit through a metal wire;
the analog-to-digital converter circuit is interconnected with the digital processing circuit through a metal wire;
the digital processing circuit is interconnected with the digital-to-analog converter circuit through a metal wire;
the digital-to-analog converter circuit is interconnected with the driving circuit by metal lines.
7. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 6, wherein: the silicon nitride-lithium niobate electro-optical modulator is interconnected with the driving circuit through an internal interconnection line;
the silicon-germanium photodetector is interconnected with the amplifier circuit by an internal interconnect line.
8. The wafer-to-wafer bonding-based heterogeneous photofusion integrated system of any one of claims 1-7, wherein: and a metal electrode disposed on the second silicon dioxide layer and interconnected with the electronic circuit.
9. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 8, wherein: and etching the second silicon dioxide layer by adopting a windowing technology, so that the metal electrode is in a bare state, and internal and external electrical interconnection is realized.
10. The wafer-to-wafer bond-based heterogeneous photofusion integrated system of claim 9, wherein: the first silicon oxide layer and the second silicon oxide layer are used as isolation layers, and the size of the isolation layers is 0-1 micrometer.
CN202210781446.7A 2022-07-04 2022-07-04 Heterogeneous photoelectric fusion integrated system based on wafer-to-wafer bonding Pending CN117406337A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117872544A (en) * 2024-03-12 2024-04-12 中国科学院半导体研究所 Silicon-lead zirconate titanate heterogeneous photoelectric fusion monolithic integrated system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117872544A (en) * 2024-03-12 2024-04-12 中国科学院半导体研究所 Silicon-lead zirconate titanate heterogeneous photoelectric fusion monolithic integrated system
CN117872544B (en) * 2024-03-12 2024-05-14 中国科学院半导体研究所 Silicon-lead zirconate titanate heterogeneous photoelectric fusion monolithic integrated system

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