CN102117820B - Silica-based photoelectric foreign substance integrating method and silica-based photoelectric foreign substance integrating chip - Google Patents
Silica-based photoelectric foreign substance integrating method and silica-based photoelectric foreign substance integrating chip Download PDFInfo
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Abstract
The invention discloses a silica-based photoelectric foreign substance integrating method and a silica-based photoelectric foreign substance integrating chip, which pertain to the technical field of photoelectric foreign substance integration. The silica-based photoelectric foreign substance integrating method comprises the steps of: arranging a silica-based passive photonic device on a silicon chip to be used as an optical information transmission channel; arranging a CMOS (Complementary Metal Oxide Semicondutor) microelectronic integrated circuit in an III-V group chip; realizing an active area multi-layer quantum well structure of an active photonic device and the CMOS microelectronic integrated circuit on the III-V group chip through one-step extension; bonding an III-V group chip on the silicon chip by adopting a whole chip bonding process; and arranging an optical coupler in the III-V group chip. According to the silica-based photoelectric foreign substance integrating method, the micro-electronic circuit and the active photonic device are integrated in the same III-V group material layer, and enables the development and the application of the silica-based photoelectric foreign substance integrated chip are feasible; and the silica-based photoelectric foreign substance integrating method can be widely applied for development of next-generation high-density, large-capacity and multifunctional single integrated photoelectric chip.
Description
Technical field
The present invention relates to the heterogeneous integrated technology of novel photoelectric field, be specifically related to heterogeneous integrated approach of a kind of silicon based opto-electronics and the heterogeneous integrated chip of silicon based opto-electronics based on silicon and III-V family semi-conducting material.
Background technology
In recent decades, along with the raising of electronic circuit development of integration technology and micro-processing technology, the integrated quantity of the size of electronic device and primary element is all in continuous increase.Especially the silicon chip of standard and be the employing of the Standard Thin membrane process of representative with CMOS has quickened the development of rapid, the Highgrade integration of information processing device greatly.Along with increasing substantially of information processing rate, amount of information exchange sharply increases between device, and traditional electrical interconnection mode is owing to receive the influence of dead resistance, electric capacity, inductance, causes crosstalking, a series of serious problems such as noise, power consumption, time delay.Aspect the big volume transport of data in high speed, the light interconnection technique that constitutes with various photonic devices has huge advantage, as the light wave of information carrier; Its frequency is very high; The enormous bandwidth advantage is arranged, and single channel can be realized the high speed transmission of signals that 10Gb/s is above, utilizes wavelength-division multiplex technique; Up to a hundred passages can be accomplished easily, vast capacity, superfast data information transfer can be realized.Can avoid in the electrical interconnection problem such as signal cross-talk and external electromagnetic radiated interference between different channels owing to adopt optical signal transmission; So; In the high-speed high capacity field of data transmission, the photon technology that is interconnected as representative with light is to be the desirable replacer of the microelectric technique of representative with the electrical interconnection.
But in the field of information processing of integrated chip, photon technology is still full-fledged far away, optical logic operation field and light buffer memory, optical storage field, still ripe without comparison commercialization technology.And be the various microelectronic elements of representative with microprocessor and RAM etc., show very excellent performance in field of information processing such as high speed logic computing, buffer memorys, and have commercialization, standardized industrial chain to support, have huge cost advantage.In order to bring into play the advantage separately of microelectric technique and photon technology; Further continue Moore's Law; Research has higher information processing rate, bigger information capacity, the integrated chip of new generation of high density of integration more; International research development trend is in the last few years more and more tended to the mutual supplement with each other's advantages Zhao " optoelectronic integrated technology " of two big technology; Promptly adopt various technology to realize the functional integrated of microelectronic circuit and photon integrated circuit, realize the main information processing capacity, realize the message transmission of photoelectricity-electric light conversion and high-speed high capacity with the plane photon technology with microelectronic circuit.
The development of semiconductor microactuator process technology has promoted the development of optoelectronic integrated technology greatly.Make a general survey of its development trend, may be summarized to be: scale nanometer miniaturization, the heterogeneous diversification of material, Highgrade integration and functional module systematization.Development in future more and more needs many based semiconductors material platform, realizes the multi-functional photoelectricity single slice integration technique of multiple heterogeneous semiconductor photon, electronic device.
The heterogeneous integrated technology of silicon based opto-electronics is the desirable technique platform that addresses this problem, realizes that high density photoelectricity is integrated; It makes silicon and III-V family semi-conducting material be combined into " new material ", realizes the multi-functional integration module of heterogeneous semiconductor photon and electronic device on this basis.The heterogeneous integrated technology of silicon based opto-electronics is that following silicon based photon technology provides new approach with the further fusion that microelectric technique develops.It has combined III-V family semiconductor excellent photoelectric performance, and the high density of silicon photon technology is integrated, low cost, the industrialization advantage of the advantage of miniaturization and silica-based microelectric technique, makes silica-basedly to have realized mutual supplement with each other's advantages with III-V family two big material systems.Realize that silica-based heterogeneous integrated major technique has: back-off weldering, heteroepitaxy and wafer bonding.Wherein wafer bonding techniques has and can realize high-quality III-V family epitaxial loayer, and integrated efficient is high, the high outstanding advantage of integration density, is developing rapidly in recent years.Wafer bonding techniques can be divided into full wafer bonding and unit module bonding, and the full wafer bonding techniques has that cost is low, integrated level is high, be suitable for large-scale advantages of application, obtains domestic and international researcher's favor.
At present, domestic and international research for silica-based heterogeneous integrated technology mainly realizes the integrated of silicon base CMOS electronic circuit, silica-based passive photonic device and III-V family active photonic device round employing unit module bonding on the silicon materials platform.There is following difficult point: at first, low, the poor bonding strength of the integrated efficient of unit module bonding techniques, it is integrated to be difficult to be fit to extensive, highdensity commercialization; Secondly, with respect to III-V family material, the carrier mobility of silicon materials is not high, has restricted its application aspect the CMOS electronic circuit of making high frequency, low-power consumption.
Summary of the invention
The objective of the invention is to overcome above-mentioned existing in prior technology microelectronic integrated circuit and photonic device and be difficult to single chip integrated defective, proposed a kind of wafer bonding technology and technological heterogeneous integrated approach of silicon based opto-electronics and heterogeneous integrated chip of silicon based opto-electronics of the CMOS of III-V family based on full wafer.
The heterogeneous integrated approach of silicon based opto-electronics that the present invention proposes comprises: silica-based passive photonic device is set as the optical information transmission channel on silicon wafer; In III-V family wafer, the CMOS microelectronic integrated circuit is set, is used for high speed information and handles; In said III-V family wafer, active photonic device is set, is used for the high-speed transitions between light, electrical information; On said III-V family wafer, realize the active area multi-layer quantum well structure of said active photonic device and CMOS microelectronic integrated circuit through extension; Adopt the wafer bonding technology said III-V of bonding family wafer on said silicon wafer of full wafer; In said III-V family wafer, optical coupler is set, is used for the efficiency light coupling between said active photonic device and silica-based passive photonic device.
Said silica-based passive photonic device adopts the silica-based micro-nano optical waveguide structure of high index-contrast.
In same III-V family material layer, said CMOS microelectronic integrated circuit and active photonic device are set, utilize the MQW technology through extension integrated said active photonic device and CMOS microelectronic integrated circuit simultaneously on said III-V family wafer.
The step of the wafer bonding technology of the said employing full wafer said III-V of bonding family wafer on said silicon wafer specifically comprises: said III-V family wafer is carried out cleaning surfaces and oxidation processes; Adopt the full wafer low-temperature bonding that said III-V family's wafer and silicon wafer are combined, bonding temperature is set to below 300 ℃; Said III-V family wafer to after combining carries out thinning back side and chemical corrosion processing.
The integral body of the active photonic device of said III-V family wafer adopts the ridge waveguide structure, and its active area adopts multi-layer quantum well structure.
Said CMOS microelectronic integrated circuit adopts and the III-V family semiconductor CMOS technology that has the si-substrate integrated circuit technological incorporation now.
Said optical coupler adopts double-deck conical gradual change coupler structure; Specifically comprise: the planar linear gradual change tapered transmission line structure of said III-V family wafer is set to the coupler on upper strata, is used for the active photonic device of said III-V family wafer and the efficiency light coupling of silica-based passive photonic device; The planar linear gradual change tapered transmission line structure of said silicon wafer is set to the coupler of lower floor, is used for the silica-based wide waveguide of coupled end and the efficiency light coupling of silica-based micro-nano fiber waveguide.
The heterogeneous integrated chip of silicon based opto-electronics that the present invention proposes comprises silicon wafer and III-V family wafer; Said silicon wafer is provided with silica-based passive photonic device, as the optical information transmission channel; Be provided with the CMOS microelectronic integrated circuit in the said III-V family wafer, be used for high speed information and handle; Be provided with the active photonic device in the said III-V family wafer, be used for the high-speed transitions between light, electrical information; Realize the active area multi-layer quantum well structure of said active photonic device and CMOS microelectronic integrated circuit on the said III-V family wafer through extension; Said III-V family wafer is bonded on the said silicon wafer through the wafer bonding technology of full wafer; Be provided with optical coupler in the said III-V family wafer, be used for the efficiency light coupling between said active photonic device and silica-based passive photonic device.
Said silica-based passive photonic device adopts the silica-based micro-nano optical waveguide structure of high index-contrast.
Said CMOS microelectronic integrated circuit and active photonic device are integrated in the same III-V family material layer; The integral body of the active photonic device of said III-V family wafer adopts the ridge waveguide structure, and its active area adopts multi-layer quantum well structure; Said optical coupler is set to double-deck conical gradual change coupler structure; The planar linear gradual change tapered transmission line structure of said III-V family wafer is set to the coupler on upper strata, is used for the active photonic device of said III-V family wafer and the efficiency light coupling of silica-based passive photonic device; The planar linear gradual change tapered transmission line structure of said silicon wafer is set to the coupler of lower floor, is used for the silica-based wide waveguide of coupled end and the efficiency light coupling of silica-based micro-nano fiber waveguide.
The present invention can be widely used in developing high density of future generation, big capacity, multi-functional monolithic integrated electro chip.Compared with prior art, the present invention has following tangible advantage:
1, the employing of the low-temperature wafer bonding of full wafer technology, for low-cost, make the heterogeneous integration module of photoelectricity on a large scale feasibility be provided.It and CMOS technology can be compatible, and this makes the heterogeneous integrated technology of silicon based opto-electronics be suitable for commercial applications more.
2, employing is technological with the III-V family semiconductor CMOS that existing si-substrate integrated circuit technology merges mutually; Make high speed, high power microelectronic circuit cheaply; In conjunction with III-V family active photonic device and silica-based passive photonic device; Realize the heterogeneous integrated chip of silicon based opto-electronics of monolithic, represented the development trend of contemporary information technology high speed, big capacity and " photoelectricity fusion " more.
3, adopt the passive device of the silica-based micro-nano optical waveguide structure of high index-contrast as the light connection, low-loss optically transmission and small bending radius are that the microminiaturization and the integrated realization of high density of the heterogeneous integrated chip of silicon based opto-electronics provides possibility.
4, the employing of bi-level coupler has improved the coupling efficiency of passive optical waveguide device and active optical component, has reduced the integrated difficulty of extensive photoelectricity.
Description of drawings
Fig. 1 is the structural representation of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics;
Fig. 2 is the appearance figure of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics;
Fig. 3 is III-V family high-speed driving circuit and the structural representation of microelectronic circuit of the active photonic device of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics;
Fig. 4 is the structural representation of the III-V family laser light source of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics, silica-based passive photonic device and double layered cone gradual change coupler.
Embodiment
Below in conjunction with description of drawings and embodiment the present invention is made further detailed description.
The embodiment of the invention has proposed a kind of wafer bonding technology and technological heterogeneous integrated approach of silicon based opto-electronics of the CMOS of III-V family based on full wafer, specifically comprises: silica-based passive photonic device at first is set on silicon wafer; On III-V family wafer, realize the active area multi-layer quantum well structure of active photonic device and CMOS microelectronic integrated circuit then through extension; Adopt wafer bonding technology bonding III-V family wafer on silicon wafer of full wafer, realize the high performance heterogeneous bonding of material; Adopt the III-V family semiconductor CMOS technology that merges mutually with existing si-substrate integrated circuit technology, make the drive circuit of CMOS microelectronic integrated circuit and active photonic device; Utilize semiconductor processing technology to make III-V family laser, modulator, photo-detector and optical coupler, they become the photon integrated circuit with silica-based passive photon set of devices, the conversion between responsible light, electrical information and the transmission of optical information.The active area of active photonic device adopts the multi-layer quantum well structure, has improved its quantum efficiency.The integral body of active photonic device adopts the ridge waveguide structure to realize the light field restriction of side direction.
Shown in Figure 1 is the structural representation of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics, and it is to be matrix with SOI (silicon-on-insulator) material 101, adopts the wafer bonding technology of full wafer, monolithic is integrated CMOS microelectronic integrated circuit and photon integrated circuit.The CMOS of III-V family microelectronic integrated circuit 106 functions are that electronic information is at a high speed handled, and the signal of telecommunication of high-speed transfer is transferred to the drive circuit 105 of III-V family electrooptic modulator 104 through plain conductor; III-V family electrooptic modulator 104 links to each other with photodetector 108 with III-V family laser light source 102 through silica-based passive photonic device 110; Its function is to be loaded into the signal of telecommunication at a high speed from the light wave of laser light source 102 emissions, and laser light source drives through dc drive circuit 103; Light wave through ovennodulation is transferred to photodetector 108 through silica-based passive photonic device 110; The function of photodetector 108 is to convert light signal into the signal of telecommunication; Resistance is amplified and the signal of telecommunication of filter circuit 107 is handled through striding, and is transferred to the other end (perhaps another piece microelectronic integrated circuit) of the CMOS of III-V family microelectronic integrated circuit 106 through plain conductor.
Shown in Figure 2 is the appearance figure of the heterogeneous integrated chip of embodiment of the invention silicon based opto-electronics; Its manufacture craft process is: at first on SOI material 101, make silica-based passive photonic device, the active area structure and the etching stop layer of extension active photonic device and microelectronic component on III-V family material then; Material surface to needing bonding cleans, and uses O
2Plasma is handled the surface that needs bonding; Then, use NH
4OH carries out Passivation Treatment to the surface; In the compression of 3MPa, carry out two hours bonding processs under 300 ℃; After bonding is accomplished, erode the above III-V family material of etching stop layer.
Shown in Figure 3 is the III-V family high-speed driving circuit of active photonic device and the structural representation of microelectronic circuit 106; Employing and the hyperfrequency of the fusion III-V family semiconductor CMOS fabrication techniques of existing si-substrate integrated circuit technology, the III-V family microelectronic circuit of low-power consumption; It links to each other with the drive circuit 105 of laser dc drive circuit 103 and electrooptic modulator 104 through plain conductor, and carries out message transmission.
Shown in Figure 4 is the structural representation of III-V family laser light source 102, silica-based passive photonic device 110 and double layered cone gradual change coupler.Adopt cmos compatible semiconductor technology to make III-V family active photonic device; The coupling of active photonic device and silica-based passive wave guide adopts the bi-level coupler structure; Light gradually is coupled to silica-based passive wave guide from active layer through evanescent wave through upper strata coupler 109; For improving coupling efficiency; The coupled section passive wave guide can be wide waveguide, and linear transitions is to the silica-based micro-nano fiber waveguide of submicron-scale gradually through the lower floor's coupler 111 on the silicon materials for it, and realization device high density is integrated microminiaturized with size.
The embodiment of the invention is combined into a kind of new material through adopting the low-temperature wafer bonding technology of full wafer with making silicon wafer and III-V family wafer high strength, is fit to very much the large-scale commercial applications application.Simultaneously; In the multi-layer quantum well structure of an extension formation; Through comprehensive Design, layout, make active photonic device and microelectronic circuit integrated in same III-V family material layer, owing to adopted the CMOS of III-V family microelectronic circuit; Make the embodiment of the invention future at a high speed, have stronger competitiveness in the research of the photoelectric chip of low energy consumption, represented the development trend of the high speed low energy consumption of contemporary information technology, big capacity and " photoelectricity fusion " more.
The above; Be merely a part of embodiment of the present invention, protection scope of the present invention is not limited thereto, and any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.The protection range of the embodiment of the invention should be as the criterion with the protection range of claim.
Claims (10)
1. heterogeneous integrated approach of silicon based opto-electronics is characterized in that said method comprises:
Silica-based passive photonic device is set as the optical information transmission channel on silicon wafer;
In III-V family wafer, the CMOS microelectronic integrated circuit is set, is used for high speed information and handles;
In said III-V family wafer, active photonic device is set, is used for the high-speed transitions between light, electrical information;
On said III-V family wafer, realize the active area multi-layer quantum well structure and the etching stop layer of said active photonic device and CMOS microelectronic integrated circuit through extension;
Adopt the wafer bonding technology said III-V of bonding family wafer on said silicon wafer of full wafer;
In said III-V family wafer, optical coupler is set, is used for the efficiency light coupling between said active photonic device and silica-based passive photonic device.
2. the heterogeneous integrated approach of silicon based opto-electronics according to claim 1 is characterized in that, said silica-based passive photonic device adopts the silica-based micro-nano optical waveguide structure of high index-contrast.
3. the heterogeneous integrated approach of silicon based opto-electronics according to claim 1; It is characterized in that; In same III-V family material layer, said CMOS microelectronic integrated circuit and active photonic device are set, utilize the MQW technology through extension integrated said active photonic device and CMOS microelectronic integrated circuit simultaneously on said III-V family wafer.
4. according to the heterogeneous integrated approach of each described silicon based opto-electronics in the claim 1 to 3, it is characterized in that the step of the wafer bonding technology of the said employing full wafer said III-V of bonding family wafer on said silicon wafer specifically comprises:
Said III-V family wafer is carried out cleaning surfaces and oxidation processes;
Adopt the full wafer low-temperature bonding that said III-V family's wafer and silicon wafer are combined, bonding temperature is set to below 300 ℃;
Said III-V family wafer to after combining carries out thinning back side and chemical corrosion processing.
5. the heterogeneous integrated approach of silicon based opto-electronics according to claim 4 is characterized in that, the integral body of the active photonic device of said III-V family wafer adopts the ridge waveguide structure, and its active area adopts multi-layer quantum well structure.
6. the heterogeneous integrated approach of silicon based opto-electronics according to claim 4 is characterized in that, said CMOS microelectronic integrated circuit adopts and the III-V family semiconductor CMOS technology that has the si-substrate integrated circuit technological incorporation now.
7. the heterogeneous integrated approach of silicon based opto-electronics according to claim 4; It is characterized in that; Said optical coupler adopts double-deck conical gradual change coupler structure; Specifically comprise: the planar linear gradual change tapered transmission line structure of said III-V family wafer is set to the coupler on upper strata, is used for the active photonic device of said III-V family wafer and the efficiency light coupling of silica-based passive photonic device; The planar linear gradual change tapered transmission line structure of said silicon wafer is set to the coupler of lower floor, is used for the silica-based wide waveguide of coupled end and the efficiency light coupling of silica-based micro-nano fiber waveguide.
8. the heterogeneous integrated chip of silicon based opto-electronics is characterized in that, said chip comprises silicon wafer and III-V family wafer; Said silicon wafer is provided with silica-based passive photonic device, as the optical information transmission channel; Be provided with the CMOS microelectronic integrated circuit in the said III-V family wafer, be used for high speed information and handle; Be provided with the active photonic device in the said III-V family wafer, be used for the high-speed transitions between light, electrical information; Realize the active area multi-layer quantum well structure of said active photonic device and CMOS microelectronic integrated circuit on the said III-V family wafer through extension; Said III-V family wafer is bonded on the said silicon wafer through the wafer bonding technology of full wafer; Be provided with optical coupler in the said III-V family wafer, be used for the efficiency light coupling between said active photonic device and silica-based passive photonic device.
9. the heterogeneous integrated chip of silicon based opto-electronics according to claim 8 is characterized in that, said silica-based passive photonic device adopts the silica-based micro-nano optical waveguide structure of high index-contrast.
10. according to Claim 8 or the heterogeneous integrated chip of 9 described silicon based opto-electronicses, it is characterized in that said CMOS microelectronic integrated circuit and active photonic device are integrated in the same III-V family material layer; The integral body of the active photonic device of said III-V family wafer adopts the ridge waveguide structure, and its active area adopts multi-layer quantum well structure; Said optical coupler is set to double-deck conical gradual change coupler structure; The planar linear gradual change tapered transmission line structure of said III-V family wafer is set to the coupler on upper strata, is used for the active photonic device of said III-V family wafer and the efficiency light coupling of silica-based passive photonic device; The planar linear gradual change tapered transmission line structure of said silicon wafer is set to the coupler of lower floor, is used for the silica-based wide waveguide of coupled end and the efficiency light coupling of silica-based micro-nano fiber waveguide.
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| GB2513531A (en) | 2012-11-30 | 2014-11-05 | Ibm | Semiconductor structure and method for manufacturing a semiconductor structure |
| US9989703B2 (en) | 2012-11-30 | 2018-06-05 | International Business Machines Corporation | Semiconductor structure and method for manufacturing a semiconductor structure |
| US9360623B2 (en) * | 2013-12-20 | 2016-06-07 | The Regents Of The University Of California | Bonding of heterogeneous material grown on silicon to a silicon photonic circuit |
| CN105807367B (en) * | 2016-05-27 | 2019-06-14 | 湖南大学 | A kind of integrated optoelectronic circuit based on graphene photoelectric device |
| CN110595619A (en) * | 2018-06-13 | 2019-12-20 | 浙江澍源智能技术有限公司 | Manufacturing method of photoelectric integrated composite chip |
| CN112284370B (en) * | 2020-12-18 | 2021-05-25 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Photonic integrated on-chip laser gyroscope and preparation method thereof |
| CN112764158B (en) * | 2020-12-31 | 2022-09-23 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Silicon-based photoelectron monolithic heterogeneous integration method |
| CN113687530B (en) * | 2021-08-31 | 2023-12-08 | 中国科学院半导体研究所 | Silicon-based electro-optic modulator and preparation method thereof |
| CN115166913A (en) * | 2022-06-29 | 2022-10-11 | 中国科学院西安光学精密机械研究所 | Wavelength division multiplexing common-package optical interconnection architecture based on microring |
| CN117254345A (en) * | 2023-11-16 | 2023-12-19 | 湖北九峰山实验室 | Modularized silicon-based heterogeneous photoelectric integrated architecture and method |
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