CN102540365B - Optical integrated structure and manufacturing method thereof - Google Patents
Optical integrated structure and manufacturing method thereof Download PDFInfo
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- CN102540365B CN102540365B CN201210040365.8A CN201210040365A CN102540365B CN 102540365 B CN102540365 B CN 102540365B CN 201210040365 A CN201210040365 A CN 201210040365A CN 102540365 B CN102540365 B CN 102540365B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004806 packaging method and process Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004606 Fillers/Extenders Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 11
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention discloses a new optical integrated structure which can effectively reduce the manufacturing cost, simplify the process steps and improve the yield, comprising: the invention relates to a laser, an optical passive device and a detector, wherein the optical passive device is connected with the laser or the detector, the optical passive device is connected with the outside through an optical waveguide, the bottom metal of the optical passive device is connected with the outside through a metal hole, and the back electrode of the laser or the detector is connected with the bottom metal of the optical passive device through a metal wire.
Description
Technical field
The present invention relates to photoelectron, microelectronic packaging technology field, be specifically related to a kind of optical integrated structure and preparation method thereof.
Background technology
Photoelectron subassembly has two kinds of integration modes at present, and monolithic is integrated and mixing monolithic is integrated.Monolithic is integrated is that photonic device and electronic package are integrated on same substrate, mostly is the system integration.But the limitation that it is certain can not produce laser instrument in silicon chip.Another one is to mix integrated technology, allows different classes of device to select respectively most suitable material and best technique separately, then through envelope, turns technology and assembles, to obtain best performance.In present stage, due to silicon substrate laser restriction, mix and integrated application widely.At present based on hybrid planar light path (PLC) having integrated significant progress and widely application, a transitional solution is provided for monolithic is integrated, the silica-based hybrid planar light path technology maturation of one side, with low cost, the progress of encapsulation technology has promoted to mix the development of integrated technology on the other hand.At present upside-down mounting (Flip-chip) technology is widely used, by means of surface label technology, WDM optical filter, isolator etc. also can upside-down mounting on identical platform.Most optical transceiver is to fit together with discrete optical element, such as present BOSA structure.Therefore aligning, adjustment and integrity problem will greatly increase production cost and reduce output.
Summary of the invention
The problems such as the cost of manufacture existing in prior art is high in order to solve, complex process, the invention provides a kind of new optical integrated structure that can effectively reduce cost of manufacture, simplification processing step and raising yield and preparation method thereof.
Concrete technical scheme is realized by following steps:
A kind of optical integrated structure, it is characterized in that, comprise: a laser instrument, an optical passive component and a detector, described optical passive component is connected with described laser instrument, described optical passive component is connected by optical waveguide with outside, the bottom of described optical passive component is provided with metal level, described metal level is connected to outside by metal aperture, the back electrode of described laser instrument is connected by metal wire with the metal level of described optical passive component bottom, described detector is connected with integrated circuit, and plastic packaging is encapsulated on substrate.
Preferably, described optical integrated structure comprises: a laser instrument, an optical passive component and a detector, described optical passive component is connected with described detector, and described optical passive component is connected by optical waveguide with outside, and the bottom of described optical passive component is provided with metal level, described metal level is connected to outside by metal aperture, the back electrode of described detector is connected by metal wire with the metal level of described optical passive component bottom, and described laser instrument is connected with integrated circuit, and plastic packaging is encapsulated on substrate.
Preferably, described optical passive component adopts passive coupling mode to be connected with described laser instrument or described detector.
Preferably, the passive coupling of described optical passive component and described laser instrument or described detector adopts catoptron or grating.
Preferably, the back electrode of described laser instrument or described detector is connected by Bonding with the metal level of described optical passive component bottom.
Preferably, described optical passive component is any of two-way device, two-way above, array waveguide grating or passive wavelength division multiplexer.
Preferably, the substrate of described optical passive component is silicon, glass or SOI.
Preferably, described optical passive component is silicon waveguide or organic waveguide with the outside waveguide being connected.
Preferably, described laser instrument is edge-emitting laser, and described detector is face pick-up probe.
Preferably, described laser instrument is surface-emitting laser, and described detector is limit pick-up probe.
Preferably, described metal level and outside are connected to open-porous metal interconnection or conducting resinl interconnection.
A method for making for optics integrated mechanism, comprises the steps:
A makes optical passive component, and optical passive component is connected with laser instrument, aims at and is fixed on card extender;
B is connected with the metal level of described optical passive component bottom the back electrode of described laser instrument by metal wire, and plastic packaging is encapsulated on substrate;
C is in the punching of described optical passive component bottom surface metal, and the metal level of described optical passive component bottom is connected to outside by metal aperture, fills interconnecting metal, extraction electrode, and form metal routing and pad at encapsulation end face;
D forms optical waveguide fixed sturcture at packaging body, and described optical passive component and outside are connected by optical waveguide, detector is connected with integrated circuit, and plastic packaging is encapsulated on substrate scribing forming unit encapsulating structure;
The waveguide of E alignment light and optical passive component.
Preferably, a kind of method for making of optical integrated structure, also comprises the steps:
A makes optical passive component, and optical passive component is connected with detector, aims at and is fixed on card extender;
B is connected with the metal level of described optical passive component bottom the back electrode of described detector by metal wire, and plastic packaging is encapsulated on substrate;
C is in the punching of described optical passive component bottom surface metal, and the metal level of described optical passive component bottom is connected to outside by metal aperture, fills interconnecting metal, extraction electrode, and form metal routing and pad at encapsulation end face;
D forms optical waveguide fixed sturcture at packaging body, and described optical passive component and outside are connected by optical waveguide, laser instrument is connected with integrated circuit, and plastic packaging is encapsulated on substrate scribing forming unit encapsulating structure;
The waveguide of E alignment light and optical passive component.
Preferably, the metal level of described optical passive component bottom is made by sputter or electric plating method.
Preferably, the metal level of described optical passive component bottom and outside intercommunicated any in three kinds of dry etching, wet etching or laser drill crossed.
Preferably, described metal aperture is annular or cylindricality.
Integrated morphology of the present invention has laser instrument, detector, optical passive component, driving/receiving circuit and integrates, and laser instrument, detector and optical passive component adopt the feature of passive coupling.This structure integrates various devices by plastic package method.Can be for optical transceiver, photoelectricity integration module, can also be integrated for three-dimensional photoelectricity, realize a kind of photoelectricity integrated morphology, by technology such as location, transfer, plastic packagings, reach photoelectric device and mix integrated, reduce required operation to boost productivity, reduce costs, production cycle and cost decline to a great extent, simultaneously, simple for realizing the method technique of this structure, with low cost, convenient operation, efficiency is high.
Accompanying drawing explanation
Fig. 1: be a kind of optical integrated structure that the embodiment of the present invention provides.
Fig. 2: be a kind of optical integrated structure that another embodiment of the present invention provides.
101, integrated circuit 102, laser instrument 103, detector 104, optical waveguide
105, optical passive component 106, optical fiber 107, metal wire
108, metal level 109, metal aperture.
Embodiment
Below in conjunction with embodiment, the present invention is further described in detail, the embodiment providing is only in order to illustrate the present invention, rather than in order to limit the scope of the invention.
embodiment 1:
As shown in Figure 1, in the optical integrated structure that the present embodiment provides, laser instrument 102 and optical passive component 105 integrate, 103 minutes other employing upside-down mounting modes of integrated circuit 101 and detector are installed, also can select the mode of Bonding, two kinds of modes all need to have pad and cabling with ducting layer upper surface on plastic-sealed body.Optical passive component 105 is connected with outside by optical fiber 106 with outside.The bottom metal 108 of laser instrument 102 back electrodes and optical passive component 105 is connected by metal wire 107; The bottom metal layers 108 of optical passive component 105 is connected with outside by metal aperture 109.
embodiment 2:
As shown in Figure 2, in the optical integrated structure that the present embodiment provides, detector 103 and optical passive component 105 integrate, 102 minutes other employing upside-down mounting modes of integrated circuit 101 and laser instrument are installed, also can select the mode of Bonding, two kinds of modes all need to have pad and cabling with ducting layer upper surface on plastic-sealed body.Optical passive component 105 is connected with outside by optical fiber 106 with outside.The bottom metal layers 108 of detector 103 back electrodes and optical passive component 105 is connected by metal wire 107; The bottom metal 108 of optical passive component 105 is connected with outside by metal aperture 109.
embodiment 3:
The present embodiment is introduced the method for making of optical integrated structure with reference to Fig. 1.
Step 1, makes optical passive component, comprises coupled waveguide, steering structure, optically functional device, coupled structure, and forms cabling and pad at end face and bottom surface.
Step 2, in structure as shown in Figure 1, laser instrument 102 and optical passive component 105 are fixed on card extender by aligning, when with laser instrument 102 launching sites and optical passive component 105 received fields unmatched time, or the deviation of Z direction is larger, can adopts at card extender increase step and adjust.By back electrode and the optical passive component 105 bottom surface metal levels 108 of metal wire 107 connecting lasers 102, after plastic packaging, optical passive component 105 bottom surface metal level 108 punchings, then fill interconnecting metal, extraction electrode.And form metal routing and pad at plastic packaging end face.At plastic-sealed body, form optical waveguide fixed sturcture.
Step 3, the detector that upside-down mounting integrated circuit and face receive, scribing forming unit encapsulating structure.
Step 4, alignment light waveguide 106 and optical passive component.
embodiment 4:
The present embodiment is introduced the method for making of optical integrated structure with reference to Fig. 2.
Step 1, makes optical passive component, comprises coupled waveguide, steering structure, optically functional device, coupled structure, and forms cabling and pad at end face and bottom surface.
Step 2, in structure as shown in Figure 2, detector 103 and optical passive component 105 are fixed on card extender by aligning, when with detector 103 launching sites and optical passive component 105 received fields unmatched time, or the deviation of Z direction is larger, can adopts at card extender increase step and adjust.The back electrode and the optical passive component 105 bottom surface metal levels 108 that by metal wire 107, connect detector 103, after plastic packaging, optical passive component 105 bottom surface metal level 108 punchings, then fill interconnecting metal, extraction electrode.And form metal routing and pad at plastic packaging end face.At plastic-sealed body, form optical waveguide fixed sturcture.
Step 3, the laser instrument 102 that upside-down mounting integrated circuit and face receive, scribing forming unit encapsulating structure.
Step 4, alignment light waveguide 106 and optical passive component.
The all integrated circuit of the present invention once encapsulate, directly on wafer, carry out, testing of equipment once completes, utilize plastic packaging encapsulation technology, realize a kind of photoelectricity integrated morphology, by technology such as location, transfer, plastic packagings, reach photoelectric device mixing integrated, reduce required operation to boost productivity, reduce costs, production cycle and cost decline to a great extent.
The above is only preferred embodiment of the present invention, and the equivalence of doing according to structure, feature and principle described in patent claim of the present invention therefore all changes or modifies, and is included in patent claim of the present invention.
Claims (16)
1. an optical integrated structure, it is characterized in that, comprise: a laser instrument, one optical passive component and a detector, described optical passive component is connected with described laser instrument, described optical passive component is connected by optical waveguide with outside, the bottom of described optical passive component is provided with metal level, described metal level is connected to outside by metal aperture, the back electrode of described laser instrument is connected by metal wire with the metal level of described optical passive component bottom, described detector is connected with integrated circuit, and plastic packaging is encapsulated on substrate, described optical passive component adopts passive coupling mode to be connected with described laser instrument.
2. an optical integrated structure, it is characterized in that, comprise: a laser instrument, one optical passive component and a detector, described optical passive component is connected with described detector, described optical passive component is connected by optical waveguide with outside, the bottom of described optical passive component is provided with metal level, described metal level is connected to outside by metal aperture, the back electrode of described detector is connected by metal wire with the metal level of described optical passive component bottom, described laser instrument is connected with integrated circuit, and plastic packaging is encapsulated on substrate, described optical passive component adopts passive coupling mode to be connected with described detector.
3. optical integrated structure according to claim 1 and 2, is characterized in that, the passive coupling of described optical passive component and described laser instrument or described detector adopts catoptron or grating.
4. optical integrated structure according to claim 1 and 2, is characterized in that, described integrated circuit is connected by upside-down mounting or Bonding mode with described laser instrument or described detector.
5. optical integrated structure according to claim 1 and 2, is characterized in that, the back electrode of described laser instrument or described detector is connected by Bonding with the metal level of described optical passive component bottom.
6. optical integrated structure according to claim 1 and 2, is characterized in that, described optical passive component is any of two-way device, two-way above, array waveguide grating or passive wavelength division multiplexer.
7. optical integrated structure according to claim 1 and 2, is characterized in that, the substrate of described optical passive component is silicon, glass or SOI.
8. optical integrated structure according to claim 1 and 2, is characterized in that, described optical passive component is silicon waveguide or organic waveguide with the outside waveguide being connected.
9. optical integrated structure according to claim 1 and 2, is characterized in that, described laser instrument is edge-emitting laser, and described detector is face pick-up probe.
10. optical integrated structure according to claim 1 and 2, is characterized in that, described laser instrument is surface-emitting laser, and described detector is limit pick-up probe.
11. optical integrated structures according to claim 1 and 2, is characterized in that, described metal level and outside are connected to open-porous metal interconnection or conducting resinl interconnection.
The method for making of 12. 1 kinds of optics integrated mechanisms, is characterized in that, comprises the steps:
A makes optical passive component, and optical passive component is connected with laser instrument, aims at and is fixed on card extender;
B is connected with the metal level of described optical passive component bottom the back electrode of described laser instrument by metal wire, and plastic packaging is encapsulated on substrate;
C is in the punching of described optical passive component bottom surface metal, and the metal level of described optical passive component bottom is connected to outside by metal aperture, fills interconnecting metal, extraction electrode, and form metal routing and pad at encapsulation end face;
D forms optical waveguide fixed sturcture at packaging body, and described optical passive component and outside are connected by optical waveguide, detector is connected with integrated circuit, and plastic packaging is encapsulated on substrate scribing forming unit encapsulating structure;
The waveguide of E alignment light and optical passive component.
The method for making of 13. 1 kinds of optics integrated mechanisms, is characterized in that, comprises the steps:
A makes optical passive component, and optical passive component is connected with detector, aims at and is fixed on card extender;
B is connected with the metal level of described optical passive component bottom the back electrode of described detector by metal wire, and plastic packaging is encapsulated on substrate;
C is in the punching of described optical passive component bottom surface metal, and the metal level of described optical passive component bottom is connected to outside by metal aperture, fills interconnecting metal, extraction electrode, and form metal routing and pad at encapsulation end face;
D forms optical waveguide fixed sturcture at packaging body, and described optical passive component and outside are connected by optical waveguide, laser instrument is connected with integrated circuit, and plastic packaging is encapsulated on substrate scribing forming unit encapsulating structure;
The waveguide of E alignment light and optical passive component.
14. according to the method for making described in claim 12 or 13, it is characterized in that, the metal level of described optical passive component bottom is made by sputter or electric plating method.
15. according to the method for making described in claim 12 or 13, it is characterized in that, the metal level of described optical passive component bottom and outside intercommunicated any in three kinds of dry etching, wet etching or laser drill crossed.
16. according to the method for making described in claim 12 or 13, it is characterized in that, described metal aperture is annular or cylindricality.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210040365.8A CN102540365B (en) | 2011-12-14 | 2012-02-20 | Optical integrated structure and manufacturing method thereof |
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| CN201110418105.5 | 2011-12-14 | ||
| CN201110418105 | 2011-12-14 | ||
| CN201210040365.8A CN102540365B (en) | 2011-12-14 | 2012-02-20 | Optical integrated structure and manufacturing method thereof |
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| CN102540365A CN102540365A (en) | 2012-07-04 |
| CN102540365B true CN102540365B (en) | 2014-01-29 |
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| CN106158998B (en) * | 2016-06-30 | 2017-08-04 | 浙江大学 | A kind of visible ray and near infrared band silicon substrate fiber waveguide integrated photodetector |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101153939A (en) * | 2006-09-28 | 2008-04-02 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101180562A (en) * | 2004-12-07 | 2008-05-14 | 里夫莱克斯光子公司 | Optically enabled hybrid semiconductor package |
| CN101464540A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5977567A (en) * | 1998-01-06 | 1999-11-02 | Lightlogic, Inc. | Optoelectronic assembly and method of making the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101180562A (en) * | 2004-12-07 | 2008-05-14 | 里夫莱克斯光子公司 | Optically enabled hybrid semiconductor package |
| CN101153939A (en) * | 2006-09-28 | 2008-04-02 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
| CN101464540A (en) * | 2007-12-19 | 2009-06-24 | 中国科学院半导体研究所 | Mixed integral single fibre three-way device |
Non-Patent Citations (2)
| Title |
|---|
| 光发射模块中激光器与光纤的无源耦合;杨存永等;《半导体技术》;20050131;第30卷(第1期);第66-68页 * |
| 杨存永等.光发射模块中激光器与光纤的无源耦合.《半导体技术》.2005,第30卷(第1期),第66页. |
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Effective date of registration: 20210220 Address after: 214028 building D1, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, New District, Wuxi City, Jiangsu Province Patentee after: National Center for Advanced Packaging Co.,Ltd. Address before: 2 / F, no.188-6, Zirui Avenue, Chengdu hi tech Development Zone, Sichuan 610041 Patentee before: CHENGDU RUIHUA OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |