CN110673279A - Edge-coupled photoelectric device packaging structure and preparation method thereof - Google Patents
Edge-coupled photoelectric device packaging structure and preparation method thereof Download PDFInfo
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- CN110673279A CN110673279A CN201911136977.5A CN201911136977A CN110673279A CN 110673279 A CN110673279 A CN 110673279A CN 201911136977 A CN201911136977 A CN 201911136977A CN 110673279 A CN110673279 A CN 110673279A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4284—Electrical aspects of optical modules with disconnectable electrical connectors
Abstract
The invention relates to the field of photoelectric devices, in particular to an edge coupling photoelectric device packaging structure which comprises an optical chip, wherein an edge coupling structure is arranged on the optical chip; the optical coupling structure block is abutted with the side coupling structure and is provided with a through hole for fixing the optical fiber; a transparent resin protective structure block arranged between the optical chip and the optical coupling structure block for covering the coupling surface of the optical chip to ensure normal light transmission; the optical chip, the coupling structure block and the transparent protective resin are all positioned in the packaging layer. When the edge-coupled optoelectronic device packaging structure is used, high-precision alignment between the optical fiber and the optical chip can be realized only by directly inserting the optical fiber into the through hole for fixing, and the edge-coupled optoelectronic device packaging structure has the advantages of passive alignment, simple structure, high precision and the like, and is convenient for developing assembly process and mass production.
Description
Technical Field
The invention relates to the field of photoelectric devices, in particular to an edge-coupled photoelectric device packaging structure and a preparation method thereof.
Background
With the rapid development of various mobile consumer electronics, the mobile consumer electronics have higher and higher quality requirements for network communication speed, delay and the like, and the optical communication technology well meets the corresponding requirements, wherein in a silicon optical-electrical integrated system, in order to meet the requirements for long-distance, high-bandwidth and high-quality signal transmission, a single-mode laser transmission technology is generally required.
The single-mode laser transmission technology has the advantages of long distance, high bandwidth and high-quality signal transmission, but the single-mode laser has a small mode spot, and the radius of the single-mode laser is only within 10 μm, so that the requirement on alignment tolerance between an optical chip and an optical fiber is high and is only about 5 μm during assembly. In the prior art, an active alignment method is usually adopted to solve the problem, that is, when an optical chip is turned on, the position of an optical fiber is adjusted and the magnitude of the optical power is detected, and the position of the optical fiber is fixed when the optical power is maximum.
The active coupling alignment mode has high equipment input cost, low efficiency and low yield, and is not suitable for batch production of photoelectric devices.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects of high equipment investment cost, low efficiency, low yield and unsuitability for batch production of optoelectronic devices in the active coupling alignment mode in the prior art, so as to provide a side coupling optoelectronic device packaging structure and a manufacturing method thereof.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
an edge-coupled optoelectronic device package structure comprises
The optical chip is provided with an edge coupling structure;
the optical coupling structure block is abutted against the side coupling structure and is provided with a through hole for fixing the optical fiber so as to couple the optical fiber with the optical chip;
the transparent resin protection structure block is arranged between the optical chip and the optical coupling structure block and is used for covering the coupling surface of the optical chip so as to ensure normal light transmission;
and the optical chip, the coupling structure block and the transparent protective resin are all positioned in the packaging layer.
Furthermore, the edge-coupled optoelectronic device packaging structure further comprises a rewiring layer and an electric chip, wherein a first bonding pad is arranged on the optical chip, the rewiring layer is abutted to the first bonding pad and is electrically connected with the optical chip, the electric chip is also arranged in the packaging layer, a second bonding pad is arranged on the electric chip, the second bonding pad is abutted to the rewiring layer, and the electric chip is also electrically connected with the rewiring layer.
Further, the transparent resin protective structure block is an ultraviolet light curing transparent resin protective structure block.
Further, the transparent resin protection structure blocks are epoxy resin protection structure blocks or benzocyclobutene protection structure blocks.
Further, the optical chip is a laser, a modulator, a detector or an integrated chip with an optical waveguide.
Further, the optical chip is any one of an indium compound semiconductor chip, a gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorus compound semiconductor chip, a silicon carbide chip, or a silicon nitride chip.
Further, the side coupling structure is a spot size converter or a waveguide structure.
Further, the optical coupling structure block is a silicon-based optical coupling structure block, a glass-based optical coupling structure block, or a ceramic-based optical coupling structure block.
The present invention also provides a method for preparing an edge-coupled optoelectronic device package structure according to any one of the above aspects, comprising the following steps:
mounting an optical chip, an electrical chip and a primary optical coupling structure block on a temporary bonding support plate, wherein a blind hole with an opening at one end is formed in the primary optical coupling structure block, and one end of the opening of the blind hole is abutted to the optical chip;
forming a transparent resin protective structure block between the optical chip and the primary optical coupling structure block;
carrying out plastic package on the whole structure to form a packaging layer;
stripping the temporary bonding carrier plate from the packaging layer, and manufacturing a rewiring layer at the position of the original temporary bonding carrier plate to form a primary packaging structure;
and cutting the primary packaging structure to enable the blind holes to become through holes, and converting the primary optical coupling structure blocks into optical coupling structure blocks to obtain the edge coupling optoelectronic device packaging structure.
Further, the stripping step adopts a debonding process.
The technical scheme of the invention has the following advantages:
1. according to the edge-coupled photoelectric device packaging structure provided by the invention, the optical coupling structure block is abutted with the edge coupling structure on the optical chip, the through hole for fixing the optical fiber is formed in the optical coupling structure block, and in the using process, the optical fiber is directly inserted into the through hole for fixing, so that the high-precision alignment between the optical fiber and the optical chip can be realized. The transparent resin protection structure block is arranged so that when the optical chip and the optical coupling structure block are packaged, the packaging material cannot penetrate into the coupling surface of the optical chip to pollute the coupling surface of the optical chip, thereby causing the condition that light cannot pass.
2. Compared with the mode that the optical chip and the electric chip are bonded through the lead in the prior art, the edge-coupled photoelectric device packaging structure can reduce the interconnection length between the optical chip and the electric chip, thereby reducing the transmission loss and improving the high-frequency characteristic.
3. According to the preparation method of the edge-coupled optoelectronic device packaging structure, the edge-coupled optoelectronic device packaging structure is prepared by adopting a wafer-level process, and the preparation method has the advantages of being accurate in positioning, small in assembly error and high in yield.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of an edge-coupled optoelectronic device package structure and an optical fiber in a coupled state according to embodiment 1 of the present invention;
FIG. 2 is an assembly view of a temporary bonding plate, an optical chip, an electrical chip, a primary optical coupling structure block, and a transparent resin protective structure block in example 1 of the present invention;
FIG. 3 is a schematic view showing the assembly of a temporary bonding plate, an optical chip, an electrical chip, a primary optical coupling structure block, a transparent resin protective structure block, and an encapsulation layer in example 1 of the present invention;
FIG. 4 is an assembly diagram of an optical chip, an electrical chip, a primary optical coupling structure block, a transparent resin protective structure block, an encapsulation layer, and a rewiring layer in embodiment 1 of the present invention;
fig. 5 is a schematic structural diagram of an edge-coupled optoelectronic device package structure in embodiment 1 of the present invention.
Reference numerals:
1. an optical chip; 11. a first pad; 2. an optical coupling structure block; 21. a primary optical coupling structure block; 211. blind holes; 3. a transparent resin protective structure block; 4. a packaging layer; 5. a wiring layer is arranged; 6. an electrical chip; 61. a second pad; 7. a temporary bonding plate; 8. an optical fiber; 9. and (4) a bump structure.
Detailed Description
The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the following embodiments are provided for better understanding of the present invention, are not limited to the best mode and do not limit the content and the scope of the present invention, and any product similar or similar to the present invention, which is obtained by combining the present invention with other prior art features or by teaching of the present invention, falls within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The examples do not show the specific experimental steps or conditions, and can be performed according to the conventional experimental steps described in the literature in the field. The reagents or instruments used are not indicated by manufacturers, and are all conventional reagent products which can be obtained commercially.
Example 1
As shown in fig. 1, the present embodiment relates to an edge-coupled optoelectronic device package structure, which includes an optical chip 1, an optical coupling structure block 2, a transparent resin protection structure block 3, and an encapsulation layer 4.
The optical chip 1, the optical coupling structure block 2 and the transparent resin protection structure block 3 are plastically packaged together by the packaging layer 4, the optical chip 1, the optical coupling structure block 2 and the transparent resin protection structure block 3 are located in the packaging layer 4, the optical coupling structure block 2 is used for fixing the optical fiber 8 so that the optical fiber 8 is coupled with the optical chip 1, the transparent resin protection structure block 3 is arranged between the optical chip 1 and the optical coupling structure block 2, and the transparent resin protection structure block 3 is used for protecting the coupling surface of the optical chip 1.
In the present embodiment, the optical chip 1 is a laser, the optical chip 1 is made of a silicon nitride material, that is, the optical chip 1 is a silicon nitride chip, in other embodiments, the optical chip 1 may also be configured as a modulator, a detector, or other optoelectronic devices with passive structures, or may also be an optoelectronic integrated chip with multiple structures, where the optoelectronic integrated chip is an integrated chip with an optical waveguide, and the type of the optical chip 1 is not limited, in other embodiments, the optical chip 1 may also be one of an indium compound semiconductor chip, a gallium-gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorus compound semiconductor chip, a silicon chip, or a silicon carbide chip, and the material selection of the optical chip 1 is also not limited.
The optical chip 1 is provided with a side coupling structure, which is also called an end-face coupling structure, and the side coupling structure is used for converting a mode field so as to match the mode field of the optical chip 1 with the mode field of the optical fiber 8, thereby reducing the coupling loss between the optical chip 1 and the optical fiber 8.
Optical coupling structure piece 2 and optical chip 1 butt, and the limit coupling structure butt on optical coupling structure piece 2 and the optical chip 1, offer on the optical coupling structure piece 2 and be used for fixed optic fibre 8 in order to realize the through-hole of optic fibre 8 with the optical chip 1 coupling, carry out optic fibre 8's fixed through inserting optic fibre 8 in the through-hole. In this embodiment, the optical coupling structure block 2 is a silicon-based optical coupling structure block, and the through hole is a square hole, in other embodiments, the optical coupling structure block 2 may also be a glass-based optical coupling structure block or a ceramic-based optical coupling structure block, and the through hole may also be a triangular hole or a V-shaped hole.
Transparent resin protection structure piece 3 sets up between optical chip 1 and optical coupling structure piece 2, and transparent resin protection structure piece 3 is arranged in filling the coupling terminal surface in order to protect optical chip 1 to the clearance between optical chip 1 and the through-hole, prevents at the encapsulation in-process, and the packaging material infiltrates in the clearance between optical chip 1 and the optical coupling structure and causes the pollution, shelter from to optical chip 1's coupling surface for optical chip 1 can't lead to the fact the condition of light to take place. In this embodiment, the transparent resin protection structure block 3 is an epoxy resin protection structure block, in other embodiments, the transparent resin protection structure block 3 may also be a benzocyclobutene (BCB) protection structure block, and the material of the transparent resin protection structure block 3 is not limited thereto, but is preferably an ultraviolet-cured transparent resin.
In addition, the edge-coupled optoelectronic device package structure in this embodiment further includes a redistribution layer 5 and an electrical chip 6, the optical chip 1 has a first pad 11 thereon, the redistribution layer 5 abuts against the first pad 11 of the optical chip 1 and is electrically connected to the optical chip 1, the electrical chip 6 is also located in the package layer 4, the electrical chip 6 is provided with a second pad 61 thereon, the second pad 61 abuts against the redistribution layer 5, the electrical chip 6 is electrically connected to the redistribution layer 5, and the electrical chip 6 is electrically connected to the optical chip 1 through the redistribution layer 5. The optical chip 1 and the electric chip 6 are electrically connected through the rewiring layer 5, and compared with a wire bonding mode in the prior art, the interconnection length between the optical chip 1 and the electric chip 6 can be shortened, so that the transmission loss between the optical chip 1 and the electric chip 6 is effectively reduced, and the high-frequency characteristic is improved.
It should be noted that, in order to enable the edge-coupled optoelectronic device to be integrated with other devices, a bump structure 9 for electrically connecting the edge-coupled optoelectronic device package structure with other devices is further disposed on the redistribution layer 5. The bump structures 9 are solder balls.
As shown in fig. 2 to 5, the edge-coupled optoelectronic device of the present embodiment is prepared by the following steps:
s1, mounting the optical chip 1 on the temporary bonding plate 7 by using a fan-out process;
s2, mounting the primary optical coupling structure block 21 on the temporary bonding plate 7 through a fan-out process, wherein the primary optical coupling structure block 21 is provided with a blind hole 211 with one open end, and one open end of the blind hole 211 is abutted to the optical chip 1;
s3, coating and curing a transparent resin between the optical chip 1 and the primary optical coupling structure block 21 to form a transparent resin protective structure block 3;
s4, carrying out plastic package on the structure obtained in the S3 by using plastic package glue to form a package layer 4;
s5, stripping the temporary bonding carrier plate and the packaging layer 4 through a de-bonding process, manufacturing a rewiring layer 5 at the position of the original temporary bonding carrier plate, and forming a bump structure 9 on the rewiring layer 5 to form a primary packaging structure;
and S6, cutting the primary packaging structure to enable the blind holes 211 to be through holes, and converting the primary optical coupling structure block 21 into an optical coupling structure block 2 to obtain the edge coupling optoelectronic device packaging structure.
The edge coupling photoelectric device packaging structure is prepared by adopting a wafer-level process, and the edge coupling photoelectric device packaging structure has the advantages of being accurate in positioning, small in assembly error and high in yield. The blind holes 211 are firstly prepared on the primary optical coupling structure block 21, and finally the blind holes 211 form through holes through cutting, so that the primary optical coupling structure block 21 is converted into the optical coupling structure block 2, and the situation that the through holes are completely filled by plastic packaging glue in the plastic packaging process can be avoided.
The limit coupling optoelectronic device packaging structure of this embodiment only needs in the use with 8 disect insertions through-holes of optic fibre and fixed, can realize that the high accuracy between optic fibre 8 and the optical chip 1 is aimed at, the limit coupling optoelectronic device packaging structure that this embodiment provided carries out the optical coupling under the condition that the laser instrument can not light, for active coupling, has advantages such as passive alignment, simple structure, precision height, is convenient for develop assembly process and volume production.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. An edge-coupled optoelectronic device package structure, comprising
The optical chip (1) is provided with an edge coupling structure;
the optical coupling structure block (2) is abutted to the side coupling structure, and a through hole for fixing the optical fiber (8) so as to couple the optical fiber (8) with the optical chip (1) is formed in the optical coupling structure block (2);
a transparent resin protective structure block (3) arranged between the optical chip (1) and the optical coupling structure block (2) for covering the coupling surface of the optical chip (1) to ensure normal light transmission;
and the packaging layer (4), the optical chip (1), the coupling structure block and the transparent protective resin are all positioned in the packaging layer (4).
2. The edge-coupled optoelectronic device package structure of claim 1, further comprising a redistribution layer (5) and an electrical chip (6), wherein the optical chip (1) has a first pad (11) thereon, the redistribution layer (5) abuts the first pad (11) and is electrically connected to the optical chip (1), the electrical chip (6) is also located in the encapsulation layer (4), the electrical chip (6) has a second pad (61) thereon, the second pad (61) abuts the redistribution layer (5), and the electrical chip (6) is also electrically connected to the redistribution layer (5).
3. An edge-coupled optoelectronic device package according to claim 1 or 2, wherein the transparent resin protective structure block (3) is an ultraviolet light curing transparent resin protective structure block.
4. An edge-coupled optoelectronic device package structure according to claim 3, wherein the transparent resin protective structure blocks (3) are epoxy protective structure blocks or benzocyclobutene protective structure blocks.
5. An edge-coupled optoelectronic device package structure according to claim 1 or 2, wherein the optical chip (1) is a laser, a modulator, a detector or an integrated chip with an optical waveguide.
6. An edge-coupled optoelectronic device package structure according to claim 1 or 2, wherein the optical chip (1) is any one of an indium compound semiconductor chip, a gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorus compound semiconductor chip, a silicon carbide chip, or a silicon nitride chip.
7. The edge-coupled optoelectronic device package of claim 1, wherein the edge-coupled structure is a spot-size converter or a waveguide structure.
8. The edge-coupled optoelectronic device package structure of claim 1, wherein the optical coupling structure block (2) is a silicon-based optical coupling structure block, a glass-based optical coupling structure block, or a ceramic-based optical coupling structure block.
9. A method of making the edge-coupled optoelectronic device package structure of any one of claims 1-8, comprising the steps of:
an optical chip (1), an electric chip (6) and a primary optical coupling structure block (21) are pasted on a temporary bonding carrier plate, a blind hole (211) with an opening at one end is formed in the primary optical coupling structure block (21), and one opening end of the blind hole (211) is abutted to the optical chip (1);
forming a transparent resin protective structure block (3) between the optical chip (1) and the primary optical coupling structure block (21);
carrying out plastic package on the whole structure to form a packaging layer (4);
stripping the temporary bonding carrier plate from the packaging layer (4), and manufacturing a rewiring layer (5) at the position of the original temporary bonding carrier plate to form a primary packaging structure;
and cutting the primary packaging structure to enable the blind holes (211) to be through holes, and converting the primary optical coupling structure blocks (21) into optical coupling structure blocks (2) to obtain the edge coupling optoelectronic device packaging structure.
10. The method of claim 9, wherein the step of peeling employs a debonding process.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911136977.5A CN110673279A (en) | 2019-11-19 | 2019-11-19 | Edge-coupled photoelectric device packaging structure and preparation method thereof |
| PCT/CN2020/103968 WO2021098266A1 (en) | 2019-11-19 | 2020-07-24 | Edge-coupling optoelectronic device package structure, and manufacturing method therefor |
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| CN201911136977.5A CN110673279A (en) | 2019-11-19 | 2019-11-19 | Edge-coupled photoelectric device packaging structure and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021098266A1 (en) * | 2019-11-19 | 2021-05-27 | 华进半导体封装先导技术研发中心有限公司 | Edge-coupling optoelectronic device package structure, and manufacturing method therefor |
| CN113421877A (en) * | 2021-06-16 | 2021-09-21 | 杭州光智元科技有限公司 | Semiconductor packaging structure |
| CN114325965A (en) * | 2021-12-28 | 2022-04-12 | 华进半导体封装先导技术研发中心有限公司 | Optical chip and electric chip packaging structure and preparation method thereof |
| CN114578497A (en) * | 2022-03-02 | 2022-06-03 | Nano科技(北京)有限公司 | Packaging structure and packaging method based on silicon-based optoelectronic integrated chip |
| CN115084046A (en) * | 2022-07-20 | 2022-09-20 | 威海市泓淋电力技术股份有限公司 | Hybrid integrated semiconductor package and manufacturing method thereof |
| CN115149394A (en) * | 2022-09-05 | 2022-10-04 | 山东中清智能科技股份有限公司 | Photoelectric device integrated packaging structure and manufacturing method thereof |
| CN115542458A (en) * | 2022-11-30 | 2022-12-30 | 中国电子科技集团公司信息科学研究院 | Heterogeneous integrated photoelectric micro-system and manufacturing method thereof |
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| CN115542458A (en) * | 2022-11-30 | 2022-12-30 | 中国电子科技集团公司信息科学研究院 | Heterogeneous integrated photoelectric micro-system and manufacturing method thereof |
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| WO2021098266A1 (en) | 2021-05-27 |
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