WO2021098266A1

WO2021098266A1 - Edge-coupling optoelectronic device package structure, and manufacturing method therefor

Info

Publication number: WO2021098266A1
Application number: PCT/CN2020/103968
Authority: WO
Inventors: 曹立强; 孙瑜; 刘丰满
Original assignee: 华进半导体封装先导技术研发中心有限公司
Priority date: 2019-11-19
Filing date: 2020-07-24
Publication date: 2021-05-27
Also published as: CN110673279A

Abstract

An edge-coupling optoelectronic device package structure comprises: an optical chip (1) provided with an edge-coupling structure; an optical coupling structural block (2) abutting the edge-coupling structure and provided with a through hole for retaining an optical fiber (8); and a transparent resin protective structural block (3) provided between the optical chip (1) and the optical coupling structural block (2) and used to cover a coupling surface of the optical chip (1) to ensure normal light transmission, wherein the optical chip (1), the optical coupling structural block (2), and the transparent resin protective structural block (3) are all located within a packaging layer (4). Using the edge-coupling optoelectronic device package structure simply requires inserting and retaining an optical fiber (8) in the through hole to achieve high precision alignment between the optical fiber (8) and the optical chip (1). The invention has advantages of passive alignment, structural simplicity, high precision, and the like, thereby facilitating assembly processes and mass production.

Description

Side-coupling photoelectric device packaging structure and preparation method thereof

Technical field

This application relates to the field of optoelectronic devices, in particular to an edge-coupled optoelectronic device packaging structure and a preparation method thereof.

Background technique

With the rapid development of various mobile consumer electronic products, mobile consumer electronic products have higher and higher requirements for the quality of network communication speed and delay, and optical communication technology satisfies the corresponding needs. Among them, in silicon In photosynthetic optoelectronic integrated systems, in order to meet the long-distance, high-bandwidth, and high-quality signal transmission requirements, single-mode laser transmission technology is usually required.

Single-mode laser transmission technology has the advantages of long-distance, high-bandwidth, and high-quality signal transmission. However, the mode spot of single-mode laser is small, and its radius is only within 10μm. Therefore, when assembling, the gap between the optical chip and the optical fiber The alignment tolerance is relatively high, only about 5μm. In the prior art, an active alignment method is usually used to solve this problem, that is, when the optical chip is lit, the position of the optical fiber is adjusted and the size of the optical power is detected, and the position of the optical fiber is fixed when the optical power is maximum.

The equipment of the active coupling alignment method has high investment cost, low efficiency, and low yield, and is not suitable for mass production of optoelectronic devices.

Summary of the invention

Therefore, the technical problem to be solved by this application is to overcome the disadvantages of the prior art active coupling alignment method of high equipment investment cost, low efficiency, low yield, and unsuitable for mass production of optoelectronic devices, thereby providing an edge Coupling optoelectronic device packaging structure and preparation method thereof.

In order to solve the above technical problems, the technical solutions adopted in this application are:

An edge-coupled optoelectronic device packaging structure, including

An optical chip with an edge coupling structure provided on the optical chip;

An optical coupling structure block, which abuts against the side coupling structure, the optical coupling structure block is provided with a through hole for fixing the optical fiber to couple the optical fiber with the optical chip;

A transparent resin protective structure block, which is arranged between the optical chip and the optical coupling structure block, and is used to cover the coupling surface of the optical chip to ensure normal light transmission;

And, the encapsulation layer, the optical chip, the coupling structure block and the transparent protective resin are all located in the encapsulation layer.

Further, the edge-coupled optoelectronic device packaging structure further includes a rewiring layer and an electrical chip. The optical chip has a first pad, and the rewiring layer is in contact with the first pad and is in contact with the The optical chip is electrically connected, the electric chip is also located in the encapsulation layer, the electric chip has a second pad, the second pad is in contact with the rewiring layer, and the electric chip is in contact with the rewiring layer. The rewiring layer is also electrically connected.

Further, the transparent resin protection structure block is an ultraviolet-curable transparent resin protection structure block.

Further, the transparent resin protection structure block is an epoxy resin protection structure block or a benzocyclobutene protection structure block.

Further, the optical chip is a laser, a modulator, a detector or an integrated chip with an optical waveguide.

Further, the optical chip is any one of an indium compound semiconductor chip, a gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorous compound semiconductor chip, a silicon chip, a silicon carbide chip, or a silicon nitride chip.

Further, the edge coupling structure is a mode spot converter or a waveguide structure.

Further, the optical coupling structure block is a silicon-based optical coupling structure block, a glass-based optical coupling structure block or a ceramic-based optical coupling structure block.

This application also provides a method for preparing the edge-coupled optoelectronic device packaging structure according to any one of the above solutions, including the following steps:

Mounting an optical chip, an electrical chip and a primary light coupling structure block on the temporary bonding carrier board, the primary light coupling structure block is provided with a blind hole with one end open, and one end of the blind hole opening abuts the optical chip;

A transparent resin protective structure block is formed between the optical chip and the primary light coupling structure block;

Plastic encapsulation of the entire structure to form an encapsulation layer;

The temporary bonding carrier is peeled off from the packaging layer, and a rewiring layer is made at the position of the original temporary bonding carrier to form a primary packaging structure;

The primary packaging structure is cut so that the blind holes become through holes, and the primary light coupling structure block is transformed into a light coupling structure block to obtain a side-coupled optoelectronic device packaging structure.

Further, the peeling step adopts a debonding process.

The technical solution of this application has the following advantages:

1. In the side-coupling optoelectronic device packaging structure provided by this application, the light-coupling structure block is in contact with the side-coupling structure on the optical chip, and the light-coupling structure block is provided with a through hole for fixing the optical fiber. The optical fiber is directly inserted into the through hole for fixing to achieve high-precision alignment between the optical fiber and the optical chip. The edge-coupled optoelectronic device packaging structure provided in this application can perform optical coupling without igniting the laser, which is relatively Coupling has the advantages of passive alignment, simple structure, high precision, etc., which facilitates the development of assembly processes and mass production. The arrangement of the transparent resin protective structure block makes it possible that when the optical chip and the optical coupling structure block are packaged, the encapsulating material will not penetrate to the coupling surface of the optical chip and pollute the coupling surface of the optical chip, resulting in a situation where light cannot pass through.

2. The edge-coupled optoelectronic device packaging structure provided by this application combines the optical chip and the electric chip into an assembly unit, and the optical chip and the electric chip are electrically connected through the rewiring layer, and are connected to the optical chip and the electric chip in the prior art. Compared with the wire bonding method of the electric chip, the edge-coupled optoelectronic device packaging structure of the present application can reduce the interconnection length between the optical chip and the electric chip, thereby reducing transmission loss and improving high-frequency characteristics.

3. The method for manufacturing the side-coupled optoelectronic device packaging structure provided by the present application uses a wafer-level process to prepare the side-coupled optoelectronic device packaging structure, which has the advantages of precise positioning, small assembly errors, and high yield.

Description of the drawings

In order to more clearly illustrate the specific embodiments of this application or the technical solutions in the prior art, the following will briefly introduce the drawings that need to be used in the specific embodiments or the description of the prior art. Obviously, the appendix in the following description The drawings are some embodiments of the application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work.

FIG. 1 is a schematic structural diagram of an edge-coupled optoelectronic device packaging structure and an optical fiber in a coupled state in Embodiment 1 of the present application;

2 is an assembly schematic diagram of the temporary bonding board, the optical chip, the electric chip, the primary optical coupling structure block, and the transparent resin protection structure block in the embodiment 1 of the present application;

3 is a schematic diagram of the assembly of the temporary bonding board, the optical chip, the electric chip, the primary optical coupling structure block, the transparent resin protective structure block, and the packaging layer in Embodiment 1 of the present application;

4 is a schematic diagram of the assembly of the optical chip, the electric chip, the primary light coupling structure block, the transparent resin protective structure block, the encapsulation layer, and the rewiring layer in Embodiment 1 of the present application;

FIG. 5 is a schematic structural diagram of the edge-coupled optoelectronic device packaging structure in Embodiment 1 of the present application.

Reference signs:

1. Optical chip; 11. First bonding pad; 2. Optical coupling structure block; 21. Primary optical coupling structure block; 211. Blind hole; 3. Transparent resin protective structure block; 4. Encapsulation layer; 5. Rewiring layer 6. Electric chip; 61. Second bonding pad; 7. Temporary bonding board; 8. Optical fiber; 9. Bump structure.

Detailed ways

The technical solutions of this application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the following embodiments are provided for a better understanding of this application, and are not limited to the best embodiments, and do not affect the content of this application. And the scope of protection constitutes a limitation. Any product that is the same as or similar to the present application under the enlightenment of this application or by combining the features of this application with other prior art shall fall under the protection of this application. Within range.

In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the pointed device or element must have a specific orientation or a specific orientation The structure and operation cannot therefore be understood as a limitation of this application. In addition, the terms "first", "second", and "third" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.

In the description of this application, it should be noted that the terms "installation", "connection", and "connection" should be understood in a broad sense, unless otherwise clearly specified and limited. For example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two components. For those of ordinary skill in the art, the specific meanings of the above-mentioned terms in this application can be understood under specific circumstances.

In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.

If the specific experimental steps or conditions are not indicated in the examples, it can be carried out according to the operations or conditions of the conventional experimental steps described in the literature in the field. The reagents or instruments used without the manufacturer's indication are all conventional reagent products that can be purchased commercially.

Example 1

As shown in FIG. 1, this embodiment relates to an edge-coupled optoelectronic device packaging structure, which includes an optical chip 1, an optical coupling structure block 2, a transparent resin protective structure block 3, and an encapsulation layer 4.

The optical chip 1, the optical coupling structure block 2, and the transparent resin protection structure block 3 are plastically sealed together by the encapsulation layer 4. The optical chip 1, the optical coupling structure block 2 and the transparent resin protection structure block 3 are located in the encapsulation layer 4, and the optical coupling structure block 2 is used to fix the optical fiber 8 to couple the optical fiber 8 with the optical chip 1, the transparent resin protective structure block 3 is arranged between the optical chip 1 and the optical coupling structure block 2, and the transparent resin protective structure block 3 is used to protect the coupling of the optical chip 1 surface.

Among them, in this embodiment, the optical chip 1 is a laser, and the optical chip 1 is made of silicon nitride material, that is, the optical chip 1 is a silicon nitride chip. In other embodiments, the optical chip 1 may also be configured as a modulator. , Detectors or other optoelectronic devices with passive structures, or optoelectronic integrated chips with multiple structures. The optoelectronic integrated chips are integrated chips with optical waveguides. The types of optical chips 1 are not limited. In the embodiment, the optical chip 1 can also be one of an indium compound semiconductor chip, a gallium gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorous compound semiconductor chip, a silicon chip, or a silicon carbide chip. The material of the optical chip 1 is also selected. Unrestricted.

The optical chip 1 is provided with an edge coupling structure. The edge coupling structure is also called an end coupling structure. The edge coupling structure is used to convert the mode field to match the mode field of the optical chip 1 with the mode field of the optical fiber 8, thereby reducing the optical chip. The coupling loss between 1 and the optical fiber 8. In this embodiment, the side-coupling structure uses a mode spot converter. In other embodiments, the side-coupling structure can also be a waveguide structure. The specific structure of the side-coupling structure is similar to the prior art. They are consistent, so I won’t repeat them here.

The optical coupling structure block 2 is in contact with the optical chip 1, and the optical coupling structure block 2 is in contact with the edge coupling structure on the optical chip 1. The optical coupling structure block 2 is provided with a fixing optical fiber 8 to realize the optical fiber 8 and the optical chip 1. In the coupled through hole, the optical fiber 8 is fixed by inserting the optical fiber 8 into the through hole. In this embodiment, the optical coupling structure block 2 is a silicon-based optical coupling structure block, and the through hole is a square hole. In other embodiments, the optical coupling structure block 2 may also be a glass-based optical coupling structure block or a ceramic-based optical coupling structure block. The structure block, the through hole can also be set as a triangular hole or a V-shaped hole.

The transparent resin protective structure block 3 is arranged between the optical chip 1 and the optical coupling structure block 2, and the transparent resin protective structure block 3 is used to fill the gap between the optical chip 1 and the through hole to protect the coupling end surface of the optical chip 1. During the packaging process, the packaging material is prevented from penetrating into the gap between the optical chip 1 and the optical coupling structure to pollute and block the coupling surface of the optical chip 1 so that the optical chip 1 cannot pass light. In this embodiment, the transparent resin protection structure block 3 is an epoxy resin protection structure block. In other embodiments, the transparent resin protection structure block 3 may also be a benzocyclobutene (BCB) protection structure block. The material of the structural block 3 is not restricted by this, but the first choice is a transparent ultraviolet curing resin.

In addition, the edge-coupled optoelectronic device packaging structure in this embodiment further includes a rewiring layer 5 and an electrical chip 6. The optical chip 1 has a first pad 11, and the rewiring layer 5 is in contact with the first pad 11 of the optical chip 1. Is connected to and electrically connected to the optical chip 1, the electric chip 6 is also located in the encapsulation layer 4, the electric chip 6 is provided with a second pad 61, the second pad 61 abuts the rewiring layer 5, the electric chip 6 and the rewiring The layer 5 is electrically connected, and the electrical chip 6 is electrically connected to the optical chip 1 through the rewiring layer 5. The optical chip 1 and the electric chip 6 are electrically connected through the rewiring layer 5. Compared with the wire bonding method in the prior art, the interconnection length between the optical chip 1 and the electric chip 6 can be shortened, thereby effectively reducing the light The transmission loss between the chip 1 and the electric chip 6 improves the high frequency characteristics.

It should be noted that, in order to enable the side-coupled optoelectronic device to be integrated with other devices, a bump structure 9 for electrically connecting the side-coupled optoelectronic device packaging structure with other devices is also provided on the rewiring layer 5. The bump structure 9 is a solder ball.

As shown in Figure 2-5, the edge-coupled optoelectronic device of this embodiment is prepared according to the following steps:

S1. Mount the optical chip 1 on the temporary bonding board 7 by using a fan-out process;

S2. Mount the primary light coupling structure block 21 on the temporary bonding board 7 through a fan-out process. The primary light coupling structure block 21 is provided with a blind hole 211 with one end open, and one end of the blind hole 211 abuts the optical chip 1;

S3. Coating and curing a transparent resin between the optical chip 1 and the primary light coupling structure block 21 to form a transparent resin protection structure block 3;

S4. Plastic seal the structure obtained in S3 with a plastic sealant to form an encapsulation layer 4;

S5. The temporary bonding carrier is stripped from the packaging layer 4 by a debonding process, and a rewiring layer 5 is made at the position of the original temporary bonding carrier, and a bump structure 9 is formed on the rewiring layer 5 to form a primary package structure;

S6. Cutting the primary packaging structure so that the blind holes 211 become through holes, and the primary light coupling structure block 21 is transformed into the light coupling structure block 2 to obtain an edge-coupled optoelectronic device packaging structure.

The edge-coupled optoelectronic device packaging structure is prepared by using a wafer-level process, which has the advantages of precise positioning, small assembly error, and high yield. By first preparing the blind holes 211 on the primary light coupling structure block 21, and finally by cutting the blind holes 211 to form through holes, the primary light coupling structure block 21 is transformed into the light coupling structure block 2, which can avoid the plastic molding process. It happens that all the through holes are filled.

In the edge-coupled optoelectronic device packaging structure of this embodiment, only the optical fiber 8 needs to be directly inserted into the through hole and fixed during use, so that high-precision alignment between the optical fiber 8 and the optical chip 1 can be achieved. The edge-coupled optoelectronic device packaging structure can perform optical coupling without igniting the laser. Compared with active coupling, it has the advantages of passive alignment, simple structure, and high precision, which is convenient for assembly process and mass production.

Obviously, the foregoing embodiments are merely examples for clear description, and are not intended to limit the implementation manner. For those of ordinary skill in the art, other changes or modifications in different forms can be made on the basis of the above description. It is unnecessary and impossible to list all the implementation methods here. The obvious changes or changes derived from this are still within the scope of protection created by this application.

Claims

An edge-coupled optoelectronic device packaging structure, which is characterized in that it comprises

An optical chip (1), the optical chip (1) is provided with an edge coupling structure;

The optical coupling structure block (2) is in contact with the side coupling structure, and the optical coupling structure block (2) is provided with an optical fiber (8) for fixing the optical fiber (8) to couple the optical fiber (8) with the optical chip (1) Through hole

A transparent resin protective structure block (3), which is arranged between the optical chip (1) and the optical coupling structure block (2), and is used to cover the coupling surface of the optical chip (1) to ensure normal light transmission ；

And, the encapsulation layer (4), the optical chip (1), the coupling structure block and the transparent protective resin are all located in the encapsulation layer (4).
The edge-coupled optoelectronic device packaging structure according to claim 1, wherein the edge-coupled optoelectronic device packaging structure further comprises a rewiring layer (5) and an electrical chip (6), and the optical chip (1) has The first pad (11), the rewiring layer (5) abuts the first pad (11) and is electrically connected to the optical chip (1), and the electrical chip (6) is also located In the packaging layer (4), the electrical chip (6) has a second pad (61), the second pad (61) abuts the rewiring layer (5), and the The electric chip (6) and the rewiring layer (5) are also electrically connected.
The edge-coupled optoelectronic device packaging structure according to claim 1 or 2, wherein the transparent resin protection structure block (3) is an ultraviolet curing transparent resin protection structure block.
The edge-coupled optoelectronic device packaging structure according to claim 3, wherein the transparent resin protection structure block (3) is an epoxy resin protection structure block or a benzocyclobutene protection structure block.
The edge-coupled optoelectronic device packaging structure according to claim 1 or 2, wherein the optical chip (1) is a laser, a modulator, a detector, or an integrated chip with an optical waveguide.
The edge-coupled optoelectronic device packaging structure according to claim 1 or 2, wherein the optical chip (1) is an indium compound semiconductor chip, a gallium compound semiconductor chip, an arsenic compound semiconductor chip, a phosphorus compound semiconductor chip, a silicon chip , Either silicon carbide chip or silicon nitride chip.
The edge-coupled optoelectronic device packaging structure according to claim 1, wherein the edge-coupled structure is a mode spot converter or a waveguide structure.
The edge-coupled optoelectronic device packaging structure according to claim 1, wherein the optical coupling structure block (2) is a silicon-based optical coupling structure block, a glass-based optical coupling structure block or a ceramic-based optical coupling structure block.
A method for preparing the edge-coupled optoelectronic device packaging structure according to any one of claims 1-8, characterized in that it comprises the following steps:

Mount the optical chip (1), the electric chip (6) and the primary optical coupling structure block (21) on the temporary bonding carrier board, and the primary optical coupling structure block (21) is provided with a blind hole (211) with an opening at one end ), the open end of the blind hole (211) abuts against the optical chip (1);

A transparent resin protective structure block (3) is formed between the optical chip (1) and the primary light coupling structure block (21);

Plastic encapsulation of the entire structure to form an encapsulation layer (4);

Peel off the temporary bonding carrier board and the packaging layer (4), and fabricate a rewiring layer (5) at the position of the original temporary bonding carrier board to form a primary packaging structure;

The primary packaging structure is cut so that the blind holes (211) become through holes, and the primary light coupling structure block (21) is transformed into the light coupling structure block (2) to obtain an edge-coupled optoelectronic device packaging structure.
The preparation method according to claim 9, wherein the peeling step adopts a debonding process.