CN106980159A - Photoelectric module packaging structure based on photoelectric hybrid integration - Google Patents
Photoelectric module packaging structure based on photoelectric hybrid integration Download PDFInfo
- Publication number
- CN106980159A CN106980159A CN201710131509.3A CN201710131509A CN106980159A CN 106980159 A CN106980159 A CN 106980159A CN 201710131509 A CN201710131509 A CN 201710131509A CN 106980159 A CN106980159 A CN 106980159A
- Authority
- CN
- China
- Prior art keywords
- optical
- encapsulating structure
- electric module
- photonic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 6
- 230000010354 integration Effects 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 239000000835 fiber Substances 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims description 39
- 230000005622 photoelectricity Effects 0.000 claims description 29
- 239000013307 optical fiber Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 description 15
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 239000003292 glue Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 7
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a photoelectric module packaging structure based on photoelectric hybrid integration, which comprises a substrate; a planar photon loop carrier plate bonded on the substrate; a fiber optic connector connected to the planar photonic circuit carrier; the first optical waveguide is positioned in the planar photon circuit carrier plate and is parallel to the surface of the substrate; a vertical interconnect structure and its pads within the substrate; a lens, a photonic device and an electronic device integrated on a substrate; and a heat sink located above the photonic device; wherein the photonic device is coupled to the first optical waveguide. The invention is suitable for an onboard optical module and an optical transceiver module, can reduce interconnection loss, carry out high-bandwidth optical interconnection signal propagation, realize the wavelength division multiplexing function and expand the channel number and wavelength of the photoelectric hybrid integrated module.
Description
Technical field
The present invention relates to photoelectronics technical field, more particularly to a kind of optical-electric module encapsulation based on photoelectricity hybrid integrated
Structure.
Background technology
With scientific and technological progress, the limitation of traditional electricity interlinkage in physical property is gradually highlighted, next generation's interconnection
Transmission rate and electricity bandwidth requirement are gradually stepped up, and electricity interlinkage is extremely restricted.On high density, the direction of low-power consumption,
Optical interconnection has a extensive future.Because IC characteristic sizes are less and less, cause the reduction of interconnecting line cross section and line spacing,
Resistance, electric capacity, ghost effect caused by inductance increasingly influence the performance of circuit, and interconnection RC delay turns into limitation overall signal and passed
Broadcast the major reason of speed.Overcome loss and reflection that electricity interlinkage is brought, reduce photonic device and electron device package
Interconnection length has become the major issue of optoelectronic package.
In the prior art, silicon-based technologies tend to be ripe substantially, based on CMOS integrated modulators, laser, fiber waveguide with
And the interchip communication technology of photodetector is just commercially used.On the monosilicon with VLSI Integration ofTechnologies modulator, fiber waveguide,
The optical modules such as detector, photoswitch are feasible.Generally in the integrated optical module in edge of plate, this optical module is due to physical location
Reason, the distance apart from chip is longer, and loss is larger, and interconnection density is relatively low.Also, outside piece in optical module, usually using silicon
The device such as optical device and EAM, although its end coupling is to polarization insensitive, it would be preferable to support the light emitting devices of high bandwidth, but
It is that coupling redundancy is big.In addition, in the prior art, usual encapsulating material is using resin or ceramics etc., and its loss is higher, it is difficult to
Form the gain to optical-electric module passage and wavelength.
Onboard optical module generally couples each electron-like and photonic device using based on eyeglass or active mode, and using can
Plug optical interface is connected with PCB, can be reduced PCB substrate face space-consuming, be reduced the loss of signal, ensures passage high-transmission energy
Power, fast and flexible assembly and disassembly, convenient use and replacing.In recent years, to meet low-power to VLSI integrated circuits, it is light
The manufacturing requirements of type and compact package, generates 3D encapsulation technologies, is obtained in terms of photoelectric hybrid integrated circuit miniaturization
It is extremely improved, simultaneously as the total interconnection length of 3D encapsulation technologies is shorter, system power dissipation can reduce about 30%.Onboard optical mode
Block and 3D encapsulation have become following developing direction of integrated optoelectronic circuit at present.
The content of the invention
The optical-electric module encapsulating structure based on photoelectricity hybrid integrated that the present invention is provided, can carry out high bandwidth, low-loss
Light network signal propagate.
In a first aspect, the present invention provides a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；Key
Close planar photonic loop support plate on the substrate；It is connected to the joints of optical fibre of planar photonic loop support plate；It is located at
In the support plate of the planar photonic loop and first fiber waveguide parallel with the substrate surface；It is vertical mutual in the substrate
Link structure and its pad；Integrated lens, photonic device and electronic device on the substrate；And positioned at the photonic device
The heat abstractor of top；Wherein described photonic device and described first optical waveguide coupled.
Alternatively, said lens are located between the photonic device and first fiber waveguide, and the photonic device passes through
Lens and described first optical waveguide coupled.
Alternatively, above-mentioned optical-electric module encapsulating structure also include the heat abstractor and planar photonic loop support plate it
Between, the sealing device between the heat abstractor and the substrate, for being sealed to the photonic device and the lens.
Alternatively, above-mentioned photonic device also includes being located inside the photonic device and parallel with the substrate surface the
Two fiber waveguides, the photonic device is optical waveguide coupled by evanescent waves and described first.
Alternatively, above-mentioned optical-electric module encapsulating structure is only packaged to the photonic device, and the flexibly integrated electricity
Sub- device.
Alternatively, above-mentioned optical-electric module encapsulating structure carries out three-dimension packaging to the photonic device and the electronic device.
Alternatively, above-mentioned photonic device and the electronic device by glass through hole technology or silicon hole technology described
Stacked in the vertical direction of substrate.
Alternatively, above-mentioned optical-electric module encapsulating structure is integrated in flexible print wiring with transistor package pot type packing forms
On plate.
Alternatively, above-mentioned optical-electric module encapsulating structure is encapsulated with reference to the substrate and motherboard, forms plate glazing transmitting-receiving mould
Block.
Alternatively, above-mentioned planar photonic loop support plate is bonded on the substrate by glue.
Alternatively, aforesaid substrate material is glass.
Alternatively, the above-mentioned joints of optical fibre be the FC types joints of optical fibre, the SC types joints of optical fibre, the ST types joints of optical fibre,
The LC types joints of optical fibre or MT-RJ type connectors.
Alternatively, above-mentioned heat abstractor is metal or silicon heat-conducting plate or fin, or thermoelectric cooling unit.
Alternatively, above-mentioned photonic device is electroabsorption modulator, directly MZM modulator, modulation laser or light transmitting
Receiving device.
Alternatively, driving or amplifying circuit of the above-mentioned electronic device for the photonic device.
Alternatively, above-mentioned photonic device and the electronic device are bonded on the substrate by upside-down mounting welding core technique,
And interconnected by the interconnection line on the planar photonic loop support plate surface.
Optical-electric module encapsulating structure provided in an embodiment of the present invention based on photoelectricity hybrid integrated, is suitable for onboard optical module
And optical transceiver module, the encapsulating structure supports optical encapsulant to encapsulate, encapsulating material is used as using low-loss material, supports high frequency
Signal is transmitted.The encapsulating structure reduces interconnection loss by electronic chip and photon chip close to assembling simultaneously.The encapsulating structure
Integrated planar optical waveguide material, such as glass, can realize wavelength-division multiplex (WDM) function, expand photoelectricity hybrid integrated module
Port number and wavelength.
Brief description of the drawings
Fig. 1 shows the schematic diagram of photoelectricity hybrid integrated structure；
Fig. 2 shows the schematic diagram for the photoelectricity hybrid integrated structure being only packaged to photon chip；
Fig. 3 shows the photoelectricity hybrid integrated structural representation that three-dimension packaging is carried out to photonic device and electronic device；
Fig. 4 shows the schematic diagram of the photoelectricity hybrid integrated structure encapsulated applied to transistor outline pot type；
Fig. 5 shows the schematic diagram for the photoelectricity hybrid integrated structure to form optical transceiver module on plate；
Fig. 6 shows the schematic diagram of the photoelectricity hybrid integrated structure with photonic device waveguide；
Fig. 7 shows the mixing of the photoelectricity with photonic device waveguide that three-dimension packaging is carried out to photonic device and electronic device
The schematic diagram of integrated morphology；
Fig. 8 shows the photoelectricity hybrid integrated structure with photonic device waveguide encapsulated applied to transistor outline pot type
Schematic diagram；
Fig. 9 shows the signal to form the photoelectricity hybrid integrated structure with photonic device waveguide of optical transceiver module on plate
Figure.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only
Only it is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 1 shows the schematic diagram of photoelectricity hybrid integrated structure.Wherein, 1 be fiber coupling joint, or optical fiber connect
Device, that is, access the fibre-optical splice of optical module, the optional use FC types joints of optical fibre, the SC types joints of optical fibre, the connection of ST types optical fiber
Device, the LC types joints of optical fibre or MT-RJ type connectors.2 be encapsulant, for photon device more sensitive in protection module
Part, can be used according to the selection of the service condition of photonic device.The encapsulant has preferably good to upper and lower part material
Cohesive well, excellent flexible and excellent durability, can use ultraviolet curing or heat cure vinyl acetate to contain
The higher vinyl-vinyl acetate copolymer of amount, or formed by materials such as thermosetting epoxy resin, glass pastes.302 are
Planar photonic loop (PLC) support plate, 301 be the fiber waveguide in the support plate of planar photonic loop, such as based on silicon, GaAs, glass
Planar medium fiber waveguide, film or flat waveguide, waveguide array, array waveguide grating (AWG) or the rarefaction wave being made Deng substrate
The waveguide devices such as division multiplexer (CWDM).4 be heat abstractor, such as by increasing copper foil layer or thermal vias come enhancing effect
Metal or silicon heat-conducting plate or fin, or thermoelectric cooling (TEC) device etc..5 be lens, in particular with semiconductor devices
The integral lens that itself is formed, for eyeglass collimation, are focused on and mould field matching, so as to be obtained most between optical-electric module and optical fiber
Big coupling.6 be photonic device, for example electroabsorption modulator (EAM), directly MZM modulator, modulation laser (DML) or light
Transceiver part.In photoelectricity hybrid integrated structure, the Waveguide end face of photonic device 6 passes through lens 5 and PLC fiber waveguide devices
The PLC fiber waveguide devices of coupling, size and optical fiber mode fields matching can be with the function of integrated OWDM/demultiplexing, can also
It is parallel waveguide array, is coupled with the external world by coupling with optical fiber.7 be electronic device, the drive of such as photonic device
Amplifying circuit that is dynamic or receiving.Photonic device 6 and electronic device 7 can be bonded to glass substrate by upside-down mounting welding core technique
On, and can be interconnected by the interconnection line of glass substrate upper surface.8 be glass substrate, planar photonic loop (PLC) support plate
302 and glass substrate 8 be bonded by the layer 801 of bonding, 801 can be glue, and 9 be vertical interconnecting structure and the weldering that is connected
Disk.
Further, as shown in Fig. 2 photoelectricity hybrid integrated structure only can be packaged to photon chip, it is used for and electricity
Sub- device is flexibly integrated.2 be encapsulant, and 302 be planar photonic loop (PLC) support plate, and 301 be in the support plate of planar photonic loop
Fiber waveguide, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 8 be glass substrate, planar photonic loop (PLC) support plate 302
It is bonded with glass substrate 8 by glue layer 801,9 be vertical interconnecting structure and the pad being connected.
Further, as shown in figure 3, photoelectricity hybrid integrated structure can carry out 3D envelopes to photonic device and electronic device
Dress, 3D encapsulation enables to the photoelectric hybrid integrated circuit to minimize.302 be planar photonic loop (PLC) support plate, and 301 be flat
Fiber waveguide in the photon circuit support plate of face, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Substrate, planar photonic loop (PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801,9 for perpendicular interconnection structure with
And the pad being connected.It is preferred that, electronic device 7 and photonic device 6 are packaged in the z-axis direction of glass substrate, and in z-axis direction
Electron device package is above photonic device.Furthermore it is possible to be decided whether to carry out light according to the functional requirement of integrated morphology
Sub- device 6 and electronic device 7 carry out seal operation.It is preferred that, glass through hole technology (TGV) or silicon hole technology can be passed through
(TSV) stacking of photonic device and electronic device in vertical direction is realized.
Further, as shown in figure 4,302 be planar photonic loop (PLC) support plate, 301 be in the support plate of planar photonic loop
Fiber waveguide, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass substrate, planar photonic loop
(PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801, and 9 be the structure of perpendicular interconnection and the pad being connected.Should
Photoelectricity hybrid integrated structure can be applied in TO-CAN encapsulation, it is necessary to integrated with flexible print wiring board (FPCB) 10.FPCB
Can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC etc..
Further, as shown in figure 5,2 be encapsulant, 302 be planar photonic loop (PLC) support plate, and 301 be planar light
Fiber waveguide in sub-loop support plate, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass substrate,
Planar photonic loop (PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801, and 9 be the structure and phase of perpendicular interconnection
The pad of connection.Electronic device 7 and photonic device 6 in the photoelectricity hybrid integrated module can integrated reception and sending function, should
Photoelectricity hybrid integrated module can combine grid array (LGA) encapsulation of substrate and the socket encapsulation of motherboard 11, form plate
Upper optical transceiver module.
Shown in Fig. 6,1 is fiber coupling joint, and the or joints of optical fibre access the fibre-optical splice of optical module, optional to make
Connected with the FC types joints of optical fibre, the SC types joints of optical fibre, the ST types joints of optical fibre, the LC types joints of optical fibre or MT-RJ types
Device.20 be photonic device waveguide；302 be planar photonic loop (PLC) support plate, and 301 be the light wave in the support plate of planar photonic loop
Lead, the planar medium fiber waveguide, film or the flat waveguide that are made based on substrates such as silicon, GaAs, glass, waveguide array,
The waveguide device such as array waveguide grating (AWG) or coarse wavelength division multiplexer device (CWDM).4 be heat abstractor, such as by increasing copper
Layers of foil or thermal vias come the metal or silicon heat-conducting plate or fin of enhancing effect, or thermoelectric cooling (TEC) device etc..5
For lens, the integral lens formed in itself in particular with semiconductor devices, for mould field matching, so that in optical-electric module and light
Maximum coupling is obtained between fibre.6 be photonic device, such as electroabsorption modulator (EAM), MZM modulator, directly modulates laser
Or light transceiver part (DML).In photoelectricity hybrid integrated structure, the Waveguide end face of photonic device 6 passes through evanescent waves coupling
Close the fiber waveguide 301 in planar photonic loop (PLC) support plate 302.PLC fiber waveguides 301 can be with integrated OWDM/demultiplex
Function or parallel waveguide array, are coupled with the external world by coupling with optical fiber.According to photonic device
6 characteristic, or follow-up use demand, can select to seal photonic device 6 or non-tight, encapsulant should have
Preferably the cohesive good to upper and lower part material, excellent flexible and excellent durability, can use ultraviolet to consolidate
Change the either higher vinyl-vinyl acetate copolymer of heat cure vinyl acetate content or by thermosetting epoxy resin, glass
The materials such as glass slurry and formed.7 be electronic device, the amplifying circuit of driving or the reception of such as photonic device.The He of photonic device 6
Electronic device 7 can be bonded on glass substrate by upside-down mounting welding core technique, and can pass through glass substrate upper surface
Interconnection line is interconnected.8 be glass substrate, the key of layer 801 that planar photonic loop (PLC) support plate 302 and glass substrate 8 pass through bonding
Close, 801 can be glue, and 9 be the structure of perpendicular interconnection and the pad being connected.
Further, as shown in fig. 7,3D encapsulation can be carried out to photonic device and electronic device, 3D encapsulation is enabled to
The photoelectric hybrid integrated circuit is minimized.20 be photonic device waveguide, and 302 be planar photonic loop (PLC) support plate, and 301 be flat
Fiber waveguide in the photon circuit support plate of face, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Substrate, planar photonic loop (PLC) support plate 302 and glass substrate 8 are bonded by the layer 801 of bonding, and 801 can be glue, and 9 are
The structure of perpendicular interconnection and the pad being connected.It is preferred that, electronic device 7 and photonic device 6 are packaged in the z-axis of glass substrate
Direction, and be packaged in z-axis direction electronic device 7 below photonic device 6.Furthermore it is possible to according to the functional requirement of integrated morphology
Decide whether that carrying out photonic device 6 and electronic device 7 carries out seal operation.It is preferred that, glass through hole technology can be passed through
Or silicon hole technology (TSV) realizes the stacking of photonic device and electronic device in vertical direction (TGV).
Further, as shown in figure 8,20 be photonic device waveguide, 302 be planar photonic loop (PLC) support plate, and 301 are
Fiber waveguide in the support plate of planar photonic loop, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Glass substrate, planar photonic loop (PLC) support plate 302 and glass substrate 8 are bonded by the layer 801 of bonding, and 801 can be glue, 9
Structure for perpendicular interconnection and the pad being connected.The photoelectricity hybrid integrated structure can be applied in TO-CAN encapsulation, needed
It is integrated with flexible print wiring board (FPCB) 10.FPCB can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC etc..
Further, as shown in figure 9,20 be photonic device waveguide, 302 be planar photonic loop (PLC) support plate, and 301 are
Fiber waveguide in the support plate of planar photonic loop, 4 be heat abstractor, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Glass substrate, planar photonic loop (PLC) support plate 302 and glass substrate 8 are bonded by the layer 801 of bonding, and 801 can be glue, 9
Structure for perpendicular interconnection and the pad being connected.Electronic device 7 and photonic device 6 in the photoelectricity hybrid integrated module can
Integrated reception and sending function, the photoelectricity hybrid integrated module can combine grid array (LGA) encapsulation and the motherboard of substrate
11 socket encapsulation, forms optical transceiver module on plate.
The optical-electric module encapsulating structure based on photoelectricity hybrid integrated that embodiments of the invention are provided, is suitable for onboard light
Module and optical transceiver module, the encapsulating structure support optical encapsulant encapsulation, using low-loss material as encapsulating material, support
High frequency signal transmission.The encapsulating structure reduces interconnection loss by electronic chip and photon chip close to assembling simultaneously.The encapsulation
Structure assembly planar optical waveguide material, such as glass can realize wavelength-division multiplex (WDM) function, expand photoelectricity hybrid integrated mould
The port number and wavelength of block.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, the change or replacement that can be readily occurred in, all should
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (16)
1. a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；The plane of bonding on the substrate
Photon circuit support plate；It is connected to the joints of optical fibre of planar photonic loop support plate；Positioned at planar photonic loop support plate
The first interior and parallel with substrate surface fiber waveguide；Vertical interconnecting structure and its pad in the substrate；It is integrated
Lens, photonic device and electronic device on the substrate；And the heat abstractor above the photonic device；It is special
Levy and be：
The photonic device and described first optical waveguide coupled.
2. optical-electric module encapsulating structure according to claim 1, it is characterised in that the lens are located at the photonic device
Between first fiber waveguide, the photonic device is optical waveguide coupled by lens and described first.
3. optical-electric module encapsulating structure according to claim 2, it is characterised in that the optical-electric module encapsulating structure is also wrapped
Include between the heat abstractor and planar photonic loop support plate, the sealing dress between the heat abstractor and the substrate
Put, for being sealed to the photonic device and the lens.
4. optical-electric module encapsulating structure according to claim 1, it is characterised in that the photonic device also includes being located at institute
State inside photonic device and second fiber waveguide parallel with the substrate surface, the photonic device passes through evanescent waves and described the
One is optical waveguide coupled.
5. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure
Only the photonic device is packaged, and the flexibly integrated electronic device.
6. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure
Three-dimension packaging is carried out to the photonic device and the electronic device.
7. optical-electric module encapsulating structure according to claim 6, it is characterised in that the photonic device and the electronics device
Part is stacked by glass through hole technology or silicon hole technology in the vertical direction of the substrate.
8. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure
It is integrated in transistor package pot type packing forms on flexible print wiring board.
9. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure
Encapsulated with reference to the substrate and motherboard, form optical transceiver module on plate.
10. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that planar photonic loop support plate
By glue bonding on the substrate.
11. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the baseplate material is glass.
12. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the joints of optical fibre are FC types
The joints of optical fibre, the SC types joints of optical fibre, the ST types joints of optical fibre, the LC types joints of optical fibre or MT-RJ type connectors.
13. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the heat abstractor be metal or
Silicon heat-conducting plate or fin, or thermoelectric cooling unit.
14. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the photonic device is electric absorption
Modulator, directly MZM modulator, modulation laser or light transceiver part.
15. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the electronic device is the light
The driving of sub- device or amplifying circuit.
16. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the photonic device and the electricity
Sub- device is bonded on the substrate by upside-down mounting welding core technique, and passes through the interconnection on the planar photonic loop support plate surface
Line is interconnected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710131509.3A CN106980159B (en) | 2017-03-07 | 2017-03-07 | Photoelectric module packaging structure based on photoelectric hybrid integration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710131509.3A CN106980159B (en) | 2017-03-07 | 2017-03-07 | Photoelectric module packaging structure based on photoelectric hybrid integration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106980159A true CN106980159A (en) | 2017-07-25 |
| CN106980159B CN106980159B (en) | 2019-01-22 |
Family
ID=59338767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710131509.3A Active CN106980159B (en) | 2017-03-07 | 2017-03-07 | Photoelectric module packaging structure based on photoelectric hybrid integration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106980159B (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091629A (en) * | 2017-12-08 | 2018-05-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of photoelectric chip integrated morphology |
| CN108693598A (en) * | 2017-03-30 | 2018-10-23 | 三菱电机株式会社 | Photonic integrated circuits and method for adjusting maximum transmission rate wavelength |
| JP2018189697A (en) * | 2017-04-28 | 2018-11-29 | 日本電信電話株式会社 | Optical transmitter |
| CN110718593A (en) * | 2018-06-27 | 2020-01-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure and forming method thereof |
| CN110799874A (en) * | 2017-08-01 | 2020-02-14 | 洛克利光子有限公司 | Module with transmitting and receiving optical subassemblies |
| CN111129941A (en) * | 2019-11-21 | 2020-05-08 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
| CN111123431A (en) * | 2018-10-30 | 2020-05-08 | 国科光芯(海宁)科技股份有限公司 | Packaging method of laser waveguide chip |
| CN111142197A (en) * | 2018-11-05 | 2020-05-12 | 华为机器有限公司 | Optical device, optical module and optical communication equipment |
| CN111929780A (en) * | 2019-09-11 | 2020-11-13 | 谷歌有限责任公司 | ASIC package with photonic and vertical power delivery |
| CN112368621A (en) * | 2018-04-12 | 2021-02-12 | 洛克利光子有限公司 | Electro-optic package and method of manufacture |
| CN112748504A (en) * | 2021-04-06 | 2021-05-04 | 苏州海光芯创光电科技股份有限公司 | Method for coupling silicon optical chip and planar optical waveguide chip |
| WO2021098266A1 (en) * | 2019-11-19 | 2021-05-27 | 华进半导体封装先导技术研发中心有限公司 | Edge-coupling optoelectronic device package structure, and manufacturing method therefor |
| CN113241329A (en) * | 2021-04-30 | 2021-08-10 | 杭州光智元科技有限公司 | Three-dimensional packaging method and packaging structure of photoelectric chip |
| CN113514923A (en) * | 2021-07-01 | 2021-10-19 | 上海曦智科技有限公司 | Packaging structure and packaging method thereof |
| US11276668B2 (en) | 2020-02-12 | 2022-03-15 | Google Llc | Backside integrated voltage regulator for integrated circuits |
| CN115144975A (en) * | 2021-03-30 | 2022-10-04 | 讯芸电子科技(中山)有限公司 | With heat-dissipating structure optical communication module |
| CN116960003A (en) * | 2023-09-21 | 2023-10-27 | 盛合晶微半导体(江阴)有限公司 | Photoelectric integrated semiconductor packaging structure and preparation method thereof |
| WO2024007945A1 (en) * | 2022-07-06 | 2024-01-11 | 南京光智元科技有限公司 | Photoelectric encapsulation structure and photon computing system |
| TWI832546B (en) * | 2022-11-03 | 2024-02-11 | 新煒科技有限公司 | Chip package module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1299471A (en) * | 1998-03-06 | 2001-06-13 | 艾利森电话股份有限公司 | Optoelectric multichip module |
| US6451622B1 (en) * | 1999-10-06 | 2002-09-17 | Mitsubishi Denki Kabushiki Kaisha | Optical device |
| US20070133923A1 (en) * | 2005-12-09 | 2007-06-14 | Park Sung W | High power planar lightwave circuit optical TX module and TX/RX module |
| CN101286619A (en) * | 2007-02-07 | 2008-10-15 | 日本电气株式会社 | Optical module |
| CN103109219A (en) * | 2010-09-07 | 2013-05-15 | 日本电信电话株式会社 | Optical module |
-
2017
- 2017-03-07 CN CN201710131509.3A patent/CN106980159B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1299471A (en) * | 1998-03-06 | 2001-06-13 | 艾利森电话股份有限公司 | Optoelectric multichip module |
| US6451622B1 (en) * | 1999-10-06 | 2002-09-17 | Mitsubishi Denki Kabushiki Kaisha | Optical device |
| US20070133923A1 (en) * | 2005-12-09 | 2007-06-14 | Park Sung W | High power planar lightwave circuit optical TX module and TX/RX module |
| CN101286619A (en) * | 2007-02-07 | 2008-10-15 | 日本电气株式会社 | Optical module |
| CN103109219A (en) * | 2010-09-07 | 2013-05-15 | 日本电信电话株式会社 | Optical module |
Cited By (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108693598A (en) * | 2017-03-30 | 2018-10-23 | 三菱电机株式会社 | Photonic integrated circuits and method for adjusting maximum transmission rate wavelength |
| CN108693598B (en) * | 2017-03-30 | 2020-06-19 | 三菱电机株式会社 | Photonic integrated circuit and method for adjusting maximum transmittance wavelength |
| JP2018189697A (en) * | 2017-04-28 | 2018-11-29 | 日本電信電話株式会社 | Optical transmitter |
| CN110799874A (en) * | 2017-08-01 | 2020-02-14 | 洛克利光子有限公司 | Module with transmitting and receiving optical subassemblies |
| US11262498B2 (en) | 2017-08-01 | 2022-03-01 | Rockley Photonics Limited | Module with transmit optical subassembly and receive optical subassembly |
| CN108091629B (en) * | 2017-12-08 | 2020-01-10 | 华进半导体封装先导技术研发中心有限公司 | Photoelectric chip integrated structure |
| CN108091629A (en) * | 2017-12-08 | 2018-05-29 | 华进半导体封装先导技术研发中心有限公司 | A kind of photoelectric chip integrated morphology |
| CN112368621A (en) * | 2018-04-12 | 2021-02-12 | 洛克利光子有限公司 | Electro-optic package and method of manufacture |
| CN110718593B (en) * | 2018-06-27 | 2021-10-15 | 台湾积体电路制造股份有限公司 | Semiconductor structure and forming method thereof |
| CN110718593A (en) * | 2018-06-27 | 2020-01-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure and forming method thereof |
| US11454773B2 (en) | 2018-06-27 | 2022-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical transceiver and manufacturing method thereof |
| CN111123431A (en) * | 2018-10-30 | 2020-05-08 | 国科光芯(海宁)科技股份有限公司 | Packaging method of laser waveguide chip |
| CN111142197A (en) * | 2018-11-05 | 2020-05-12 | 华为机器有限公司 | Optical device, optical module and optical communication equipment |
| US11978721B2 (en) | 2019-09-11 | 2024-05-07 | Google Llc | ASIC package with photonics and vertical power delivery |
| CN111929780B (en) * | 2019-09-11 | 2022-11-11 | 谷歌有限责任公司 | ASIC package with photonic and vertical power delivery |
| CN111929780A (en) * | 2019-09-11 | 2020-11-13 | 谷歌有限责任公司 | ASIC package with photonic and vertical power delivery |
| US11264358B2 (en) | 2019-09-11 | 2022-03-01 | Google Llc | ASIC package with photonics and vertical power delivery |
| WO2021098266A1 (en) * | 2019-11-19 | 2021-05-27 | 华进半导体封装先导技术研发中心有限公司 | Edge-coupling optoelectronic device package structure, and manufacturing method therefor |
| CN111129941A (en) * | 2019-11-21 | 2020-05-08 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
| CN111129941B (en) * | 2019-11-21 | 2021-06-01 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
| US11830855B2 (en) | 2020-02-12 | 2023-11-28 | Google Llc | Backside integrated voltage regulator for integrated circuits |
| US11276668B2 (en) | 2020-02-12 | 2022-03-15 | Google Llc | Backside integrated voltage regulator for integrated circuits |
| CN115144975A (en) * | 2021-03-30 | 2022-10-04 | 讯芸电子科技(中山)有限公司 | With heat-dissipating structure optical communication module |
| CN112748504A (en) * | 2021-04-06 | 2021-05-04 | 苏州海光芯创光电科技股份有限公司 | Method for coupling silicon optical chip and planar optical waveguide chip |
| CN113241329B (en) * | 2021-04-30 | 2022-06-17 | 杭州光智元科技有限公司 | Three-dimensional packaging method and packaging structure of photoelectric chip |
| US11789218B2 (en) | 2021-04-30 | 2023-10-17 | Hangzhou Guangzhiyuan Technology Co., Ltd. | Three-dimentional packaging method and package structure of photonic-electronic chip |
| CN113241329A (en) * | 2021-04-30 | 2021-08-10 | 杭州光智元科技有限公司 | Three-dimensional packaging method and packaging structure of photoelectric chip |
| CN113514923A (en) * | 2021-07-01 | 2021-10-19 | 上海曦智科技有限公司 | Packaging structure and packaging method thereof |
| WO2023273862A1 (en) * | 2021-07-01 | 2023-01-05 | 上海曦智科技有限公司 | Packaging structure and packaging method therefor |
| CN113514923B (en) * | 2021-07-01 | 2023-04-25 | 上海曦智科技有限公司 | Packaging structure and packaging method thereof |
| WO2024007945A1 (en) * | 2022-07-06 | 2024-01-11 | 南京光智元科技有限公司 | Photoelectric encapsulation structure and photon computing system |
| TWI832546B (en) * | 2022-11-03 | 2024-02-11 | 新煒科技有限公司 | Chip package module |
| CN116960003A (en) * | 2023-09-21 | 2023-10-27 | 盛合晶微半导体(江阴)有限公司 | Photoelectric integrated semiconductor packaging structure and preparation method thereof |
| CN116960003B (en) * | 2023-09-21 | 2023-11-24 | 盛合晶微半导体(江阴)有限公司 | Photoelectric integrated semiconductor packaging structure and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106980159B (en) | 2019-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106980159B (en) | Photoelectric module packaging structure based on photoelectric hybrid integration | |
| US11791899B2 (en) | Integrated optical transceiver | |
| US11424837B2 (en) | Method and system for large silicon photonic interposers by stitching | |
| CN113759475B (en) | Inner packaging type photoelectric module | |
| EP1723456B1 (en) | System and method for the fabrication of an electro-optical module | |
| TWI695198B (en) | Method and system for a chip-on-wafer-on-substrate assembly | |
| US6955481B2 (en) | Method and apparatus for providing parallel optoelectronic communication with an electronic device | |
| KR102515663B1 (en) | optical integrated circuit package | |
| WO2013101184A1 (en) | Optical i/o system using planar light-wave integrated circuit | |
| US11728894B2 (en) | Optically-enhanced multichip packaging | |
| US9939596B2 (en) | Optical integrated circuit package | |
| KR102619650B1 (en) | Ultra-small Transmitter Optical Sub-Assembly | |
| US20030038297A1 (en) | Apparatus,system, and method for transmission of information between microelectronic devices | |
| CN1977199A (en) | System and method for the fabrication of an electro-optical module | |
| US12128729B2 (en) | Integrated optical transceiver | |
| US20240149632A1 (en) | Integrated Optical Transceiver | |
| JP7548413B2 (en) | Optical connection structure, package structure, optical module, and method for manufacturing package structure | |
| CN214540151U (en) | Optical module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |