CN106980159A - Photoelectric module packaging structure based on photoelectric hybrid integration - Google Patents

Abstract

The invention provides a photoelectric module packaging structure based on photoelectric hybrid integration, including a substrate; a planar photonic circuit carrier bonded on the substrate; an optical fiber connector connected to the planar photonic circuit carrier; located in the planar photonic circuit carrier and A first optical waveguide parallel to the surface of the substrate; a vertical interconnection structure and pads thereof located in the substrate; a lens, a photonic device and an electronic device integrated on the substrate; and a heat dissipation device located above the photonic device; wherein the photonic device and the first an optical waveguide coupling. The invention is suitable for board-mounted optical modules and optical transceiver components, can reduce interconnection loss, carry out high-bandwidth optical interconnection signal propagation, and can realize wavelength division multiplexing function, and expand the channel number and wavelength of the photoelectric hybrid integrated module.

Description

Photoelectric module packaging structure based on photoelectric hybrid integration

technical field

The invention relates to the technical field of optoelectronics, in particular to an optoelectronic module packaging structure based on optoelectronic hybrid integration.

Background technique

With the advancement of science and technology, the limitations of traditional electrical interconnection in terms of physical performance are gradually highlighted, and the transmission rate and electrical bandwidth requirements of next-generation interconnection are gradually increasing, and electrical interconnection is greatly limited. In the direction of high density and low power consumption, the application prospect of optical interconnection is broad. As the IC feature size is getting smaller and smaller, the cross-section and line spacing of the interconnection leads are reduced, and the parasitic effects caused by resistance, capacitance, and inductance are increasingly affecting the performance of the circuit, and the interconnection RC delay becomes the factor that limits the overall signal propagation rate. important reason. Overcoming the loss and reflection caused by electrical interconnection and reducing the length of interconnection wires in photonic devices and electronic device packaging has become an important issue in optoelectronic packaging.

In the existing technology, the silicon-based technology is basically mature, and the inter-chip communication technology based on CMOS integrated modulators, lasers, optical waveguides and photodetectors is being commercialized. It is already feasible to use VLSI technology to integrate optical modules such as modulators, optical waveguides, detectors, and optical switches on single crystal silicon. The optical module is usually integrated on the edge of the board. Due to the physical location of this optical module, the distance from the chip is longer, the loss is larger, and the interconnection density is lower. In addition, silicon optical devices and EAM devices are usually used in off-chip optical modules. Although the end face coupling is not sensitive to polarization and can support high-bandwidth optical emitting devices, the coupling redundancy is large. In addition, in the prior art, resins or ceramics are usually used as packaging materials, which have high loss, and it is difficult to form a gain for the channel and wavelength of the optoelectronic module.

On-board optical modules usually use lenses or active methods to couple various electronic and photonic devices, and use pluggable optical interfaces to connect to the PCB, which can reduce the space occupied by the PCB substrate, reduce signal loss, ensure high transmission capacity of the channel, and fast Flexible assembly and disassembly, convenient use and replacement. In recent years, in order to meet the production technical requirements of low power, light and small packaging for VLSI integrated circuits, 3D packaging technology has been produced, which has made great improvements in the miniaturization of optoelectronic hybrid integrated circuits. At the same time, due to the 3D packaging technology The total interconnect length is shorter and the system power consumption can be reduced by about 30%. On-board optical modules and 3D packaging have become the future development direction of optoelectronic integrated circuits.

Contents of the invention

The optoelectronic module packaging structure based on optoelectronic hybrid integration provided by the invention can perform optical interconnection signal propagation with high bandwidth and low loss.

In the first aspect, the present invention provides a photoelectric module packaging structure based on photoelectric hybrid integration, including a substrate; a planar photonic circuit carrier bonded on the substrate; an optical fiber connector connected to the planar photonic circuit carrier; A first optical waveguide located in the planar photonic circuit carrier and parallel to the surface of the substrate; a vertical interconnect structure and its pads located in the substrate; lenses, photonic devices and electronic components integrated on the substrate a device; and a heat sink positioned above the photonic device; wherein the photonic device is coupled to the first optical waveguide.

Optionally, the lens is located between the photonic device and the first optical waveguide, and the photonic device is coupled to the first optical waveguide through a lens.

Optionally, the photoelectric module packaging structure above further includes sealing devices between the heat sink and the planar photonic circuit carrier, and between the heat sink and the substrate, for sealing the photonic device and the The lens is sealed.

Optionally, the above photonic device further includes a second optical waveguide located inside the photonic device and parallel to the surface of the substrate, and the photonic device is coupled to the first optical waveguide through an evanescent wave.

Optionally, the above photoelectric module packaging structure only packages the photonic device and flexibly integrates the electronic device.

Optionally, the optoelectronic module packaging structure performs three-dimensional packaging on the photonic device and the electronic device.

Optionally, the above-mentioned photonic device and the electronic device are stacked in the vertical direction of the substrate by using a through-glass via technology or a through-silicon via technology.

Optionally, the above photoelectric module packaging structure is integrated on a flexible printed circuit board in the form of a transistor housing can package.

Optionally, the above photoelectric module packaging structure is combined with the substrate and motherboard packaging to form an on-board optical transceiver module.

Optionally, the above-mentioned planar photonic circuit carrier board is bonded on the substrate by glue.

Optionally, the above substrate material is glass.

Optionally, the above optical fiber connector is an FC type optical fiber connector, an SC type optical fiber connector, an ST type optical fiber connector, an LC type optical fiber connector or an MT-RJ type connector.

Optionally, the above heat dissipation device is a metal or silicon heat conducting plate or heat sink, or a thermoelectric cooling device.

Optionally, the aforementioned photonic device is an electroabsorption modulator, an MZM modulator, a directly modulated laser, or a light emitting and receiving device.

Optionally, the above-mentioned electronic device is a driving or amplifying circuit of the photonic device.

Optionally, the above-mentioned photonic device and the electronic device are bonded to the substrate by a flip-chip process, and are interconnected through interconnection lines on the surface of the planar photonic circuit carrier.

The photoelectric module packaging structure based on photoelectric hybrid integration provided by the embodiment of the present invention is suitable for on-board optical modules and optical transceiver components. The packaging structure supports optical sealing packaging, uses low-loss materials as packaging materials, and supports high-frequency signal transmission. At the same time, the packaging structure assembles the electronic chip and the photonic chip close to each other, which reduces the interconnection loss. The packaging structure integrates planar optical waveguide materials, such as glass, which can realize wavelength division multiplexing (WDM) function, and expand the channel number and wavelength of the photoelectric hybrid integrated module.

Description of drawings

Figure 1 shows a schematic diagram of an optoelectronic hybrid integrated structure;

Figure 2 shows a schematic diagram of an optoelectronic hybrid integrated structure in which only photonic chips are packaged;

Figure 3 shows a schematic diagram of a photoelectric hybrid integrated structure for three-dimensional packaging of photonic devices and electronic devices;

FIG. 4 shows a schematic diagram of an optoelectronic hybrid integrated structure applied to a transistor outer can package;

5 shows a schematic diagram of an optoelectronic hybrid integrated structure forming an on-board optical transceiver module;

Figure 6 shows a schematic diagram of an optoelectronic hybrid integrated structure with a photonic device waveguide;

Fig. 7 shows a schematic diagram of an optoelectronic hybrid integrated structure with photonic device waveguides for three-dimensional packaging of photonic devices and electronic devices;

Fig. 8 shows a schematic diagram of an optoelectronic hybrid integrated structure with a photonic device waveguide applied to a transistor outline can package;

FIG. 9 shows a schematic diagram of an optoelectronic hybrid integrated structure with photonic device waveguides forming an on-board optical transceiver module.

detailed description

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Figure 1 shows a schematic diagram of an optoelectronic hybrid integrated structure. Among them, 1 is an optical fiber coupling connector, or an optical fiber connector, that is, an optical fiber connector connected to an optical module, and FC type optical fiber connector, SC type optical fiber connector, ST type optical fiber connector, LC type optical fiber connector or MT type are optional. - RJ type connector. 2 is a sealing material, which is used to protect the more sensitive photonic devices in the module, and can be selected according to the usage of the photonic devices. The sealing material has good adhesion to the upper and lower materials, excellent flexibility and excellent durability, and can use ultraviolet curing or heat curing ethylene-vinyl acetate copolymer with high vinyl acetate content, or Formed from materials such as thermosetting epoxy resin and glass paste. 302 is a planar photonic circuit (PLC) carrier, and 301 is an optical waveguide in a planar photonic circuit carrier, such as a planar dielectric optical waveguide, a thin film or a strip waveguide, and a waveguide based on substrates such as silicon, gallium arsenide, and glass. Waveguide devices such as arrays, arrayed waveguide gratings (AWGs), or sparse wavelength division multiplexers (CWDMs). 4 is a heat dissipation device, such as a metal or silicon heat conduction plate or heat sink, or a thermoelectric cooling (TEC) device, etc., which enhance the effect by adding a copper foil layer or a heat dissipation through hole. 5 is the lens, especially the integrated lens formed by the semiconductor device itself, which is used for lens collimation, focusing and mode field matching, so as to obtain the maximum coupling between the photoelectric module and the optical fiber. 6 is a photonic device, such as an electroabsorption modulator (EAM), a MZM modulator, a directly modulated laser (DML) or a light emitting and receiving device. In the photoelectric hybrid integrated structure, the waveguide end face of the photonic device 6 is coupled with the PLC optical waveguide device through the lens 5, and the PLC optical waveguide device whose size matches the optical fiber mode field can integrate the function of optical wavelength division multiplexing/demultiplexing, or can be The parallel waveguide array is coupled with the outside world through the coupling joint and the optical fiber. 7 is an electronic device, such as a driving or receiving amplifying circuit of a photonic device. The photonic device 6 and the electronic device 7 can be bonded to the glass substrate by a flip-chip process, and can be interconnected through interconnection lines on the upper surface of the glass substrate. 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through a bonding layer 801, 801 may be glue, and 9 is a vertical interconnection structure and connected pads.

Further, as shown in FIG. 2 , the optoelectronic hybrid integrated structure can only package the photonic chip for flexible integration with electronic devices. 2 is a sealing material, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in the planar photonic circuit carrier, 4 is a heat dissipation device, 5 is a lens, 6 is a photonic device, 8 is a glass substrate, and a planar photonic circuit (PLC) carrier board 302 and glass substrate 8 are bonded through glue layer 801 , and 9 is a vertical interconnection structure and connected pads.

Further, as shown in FIG. 3 , the optoelectronic hybrid integrated circuit can perform 3D packaging on photonic devices and electronic devices, and 3D packaging can make the optoelectronic hybrid integrated circuit miniaturized. 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in the planar photonic circuit carrier, 4 is a cooling device, 5 is a lens, 6 is a photonic device, 7 is an electronic device, and 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and glass substrate 8 are bonded through glue layer 801 , and 9 is a vertical interconnection structure and connected pads. Preferably, the electronic device 7 and the photonic device 6 are packaged in the z-axis direction of the glass substrate, and the electronic device is packaged above the photonic device in the z-axis direction. In addition, it may be determined whether the photonic device 6 and the electronic device 7 need to be sealed according to the functional requirements of the integrated structure. Preferably, the stacking of photonic devices and electronic devices in the vertical direction can be realized through glass via technology (TGV) or through silicon via technology (TSV).

Further, as shown in Figure 4, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in the planar photonic circuit carrier, 4 is a heat sink, 5 is a lens, 6 is a photonic device, and 7 is an electronic device , 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through the glue layer 801, and 9 is a vertical interconnection structure and connected pads. The optoelectronic hybrid integrated structure can be applied in TO-CAN packaging, and needs to be integrated with a flexible printed circuit board (FPCB) 10 . The FPCB can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC, etc.

Further, as shown in Figure 5, 2 is a sealing material, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in a planar photonic circuit carrier, 4 is a heat sink, 5 is a lens, and 6 is a photonic device , 7 is an electronic device, 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through the glue layer 801, and 9 is a vertical interconnection structure and connected pads. The electronic device 7 and the photonic device 6 in the optoelectronic hybrid integrated module can integrate receiving and transmitting functions, and the optoelectronic hybrid integrated module can combine the grid array (LGA) package of the substrate and the socket package of the motherboard 11 to form an on-board optical transceiver module.

As shown in Figure 6, 1 is an optical fiber coupling connector, or an optical fiber connector, that is, an optical fiber connector connected to an optical module. FC type optical fiber connector, SC type optical fiber connector, ST type optical fiber connector, and LC type optical fiber connection are optional. Connector or MT-RJ type connector. 20 is a photonic device waveguide; 302 is a planar photonic circuit (PLC) carrier, and 301 is an optical waveguide in a planar photonic circuit carrier, such as a planar dielectric optical waveguide and film made based on substrates such as silicon, gallium arsenide, and glass. Or waveguide devices such as strip waveguides, waveguide arrays, arrayed waveguide gratings (AWG) or sparse wavelength division multiplexers (CWDM). 4 is a heat dissipation device, such as a metal or silicon heat conduction plate or heat sink, or a thermoelectric cooling (TEC) device, etc., which enhance the effect by adding a copper foil layer or a heat dissipation through hole. 5 is a lens, especially an integrated lens formed by the semiconductor device itself, which is used for mode field matching, so as to obtain the maximum coupling between the photoelectric module and the optical fiber. 6 is a photonic device, such as an electroabsorption modulator (EAM), a MZM modulator, a directly modulated laser (DML) or a light emitting and receiving device. In the optoelectronic hybrid integrated structure, the waveguide end face of the photonic device 6 is coupled to the optical waveguide 301 in the planar photonic circuit (PLC) carrier 302 through the evanescent wave. The PLC optical waveguide 301 can integrate the function of optical wavelength division multiplexing/demultiplexing, or can be a parallel waveguide array, which is coupled with the outside world through a coupling joint and an optical fiber. According to the characteristics of the photonic device 6 or the subsequent use requirements, the photonic device 6 can be sealed or unsealed, and the sealing material should have good adhesion to the upper and lower materials, excellent flexibility and excellent durability , UV curing or heat curing ethylene-vinyl acetate copolymer with higher vinyl acetate content can be used, or it can be formed from thermosetting epoxy resin, glass paste and other materials. 7 is an electronic device, such as a driving or receiving amplifying circuit of a photonic device. The photonic device 6 and the electronic device 7 can be bonded to the glass substrate by a flip-chip process, and can be interconnected through interconnection lines on the upper surface of the glass substrate. 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through a bonding layer 801, 801 may be glue, and 9 is a vertical interconnection structure and connected pads.

Further, as shown in FIG. 7 , photonic devices and electronic devices can be packaged in 3D, and 3D packaging can make the optoelectronic hybrid integrated circuit miniaturized. 20 is a photonic device waveguide, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in a planar photonic circuit carrier, 4 is a cooling device, 5 is a lens, 6 is a photonic device, 7 is an electronic device, and 8 is a The glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through a bonding layer 801, 801 may be glue, and 9 is a vertical interconnection structure and connected pads. Preferably, the electronic device 7 and the photonic device 6 are packaged in the z-axis direction of the glass substrate, and the electronic device 7 is packaged under the photonic device 6 in the z-axis direction. In addition, it may be determined whether the photonic device 6 and the electronic device 7 need to be sealed according to the functional requirements of the integrated structure. Preferably, the stacking of photonic devices and electronic devices in the vertical direction can be realized through glass via technology (TGV) or through silicon via technology (TSV).

Further, as shown in Figure 8, 20 is a photonic device waveguide, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in a planar photonic circuit carrier, 4 is a heat sink, 5 is a lens, and 6 is a photon Device, 7 is an electronic device, 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through a bonding layer 801, 801 can be glue, and 9 is a vertically interconnected structure and connected pad. The optoelectronic hybrid integrated structure can be applied in TO-CAN packaging, and needs to be integrated with a flexible printed circuit board (FPCB) 10 . The FPCB can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC, etc.

Further, as shown in Figure 9, 20 is a photonic device waveguide, 302 is a planar photonic circuit (PLC) carrier, 301 is an optical waveguide in a planar photonic circuit carrier, 4 is a heat sink, 5 is a lens, and 6 is a photon Device, 7 is an electronic device, 8 is a glass substrate, the planar photonic circuit (PLC) carrier 302 and the glass substrate 8 are bonded through a bonding layer 801, 801 can be glue, and 9 is a vertically interconnected structure and connected pad. The electronic device 7 and the photonic device 6 in the optoelectronic hybrid integrated module can integrate receiving and transmitting functions, and the optoelectronic hybrid integrated module can combine the grid array (LGA) package of the substrate and the socket package of the motherboard 11 to form an on-board optical transceiver module.

The photoelectric module packaging structure based on photoelectric hybrid integration provided by the embodiments of the present invention is suitable for on-board optical modules and optical transceiver components. The packaging structure supports optical sealing packaging, uses low-loss materials as packaging materials, and supports high-frequency signal transmission. . At the same time, the packaging structure assembles the electronic chip and the photonic chip close to each other, which reduces the interconnection loss. The packaging structure integrates planar optical waveguide materials, such as glass, which can realize wavelength division multiplexing (WDM) function, and expand the channel number and wavelength of the photoelectric hybrid integrated module.

The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

Claims (16)

1. a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；The plane of bonding on the substrate Photon circuit support plate；It is connected to the joints of optical fibre of planar photonic loop support plate；Positioned at planar photonic loop support plate The first interior and parallel with substrate surface fiber waveguide；Vertical interconnecting structure and its pad in the substrate；It is integrated Lens, photonic device and electronic device on the substrate；And the heat abstractor above the photonic device；It is special Levy and be：

The photonic device and described first optical waveguide coupled.

2. optical-electric module encapsulating structure according to claim 1, it is characterised in that the lens are located at the photonic device Between first fiber waveguide, the photonic device is optical waveguide coupled by lens and described first.

3. optical-electric module encapsulating structure according to claim 2, it is characterised in that the optical-electric module encapsulating structure is also wrapped Include between the heat abstractor and planar photonic loop support plate, the sealing dress between the heat abstractor and the substrate Put, for being sealed to the photonic device and the lens.

4. optical-electric module encapsulating structure according to claim 1, it is characterised in that the photonic device also includes being located at institute State inside photonic device and second fiber waveguide parallel with the substrate surface, the photonic device passes through evanescent waves and described the One is optical waveguide coupled.

5. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure Only the photonic device is packaged, and the flexibly integrated electronic device.

6. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure Three-dimension packaging is carried out to the photonic device and the electronic device.

7. optical-electric module encapsulating structure according to claim 6, it is characterised in that the photonic device and the electronics device Part is stacked by glass through hole technology or silicon hole technology in the vertical direction of the substrate.

8. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure It is integrated in transistor package pot type packing forms on flexible print wiring board.

9. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the optical-electric module encapsulating structure Encapsulated with reference to the substrate and motherboard, form optical transceiver module on plate.

10. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that planar photonic loop support plate By glue bonding on the substrate.

11. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the baseplate material is glass.

12. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the joints of optical fibre are FC types The joints of optical fibre, the SC types joints of optical fibre, the ST types joints of optical fibre, the LC types joints of optical fibre or MT-RJ type connectors.

13. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the heat abstractor be metal or Silicon heat-conducting plate or fin, or thermoelectric cooling unit.

14. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the photonic device is electric absorption Modulator, directly MZM modulator, modulation laser or light transceiver part.

15. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the electronic device is the light The driving of sub- device or amplifying circuit.

16. the optical-electric module encapsulating structure according to claim 3 or 4, it is characterised in that the photonic device and the electricity Sub- device is bonded on the substrate by upside-down mounting welding core technique, and passes through the interconnection on the planar photonic loop support plate surface Line is interconnected.