CN106980159B - Optical-electric module encapsulating structure based on photoelectricity hybrid integrated - Google Patents
Optical-electric module encapsulating structure based on photoelectricity hybrid integrated Download PDFInfo
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- CN106980159B CN106980159B CN201710131509.3A CN201710131509A CN106980159B CN 106980159 B CN106980159 B CN 106980159B CN 201710131509 A CN201710131509 A CN 201710131509A CN 106980159 B CN106980159 B CN 106980159B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4251—Sealed packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The present invention provides a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；The planar photonic circuit support plate being bonded on substrate；It is connected to the optical fiber connector of planar photonic circuit support plate；In the support plate of planar photonic circuit and first optical waveguide parallel with substrate surface；Vertical interconnecting structure and its pad in substrate；Lens, photonic device and the electronic device being integrated on substrate；And the radiator above photonic device；Wherein photonic device and first optical waveguide coupled.The present invention is suitable for onboard optical module and optical transceiver module, can reduce interconnection loss, carry out the propagation of high bandwidth light network signal, and can be realized wavelength-division multiplex function, expand the port number and wavelength of photoelectricity hybrid integrated module.
Description
Technical field
The present invention relates to photoelectronics technical field more particularly to a kind of optical-electric module encapsulation based on photoelectricity hybrid integrated
Structure.
Background technique
With scientific and technological progress, limitation of traditional electricity interlinkage in physical property is gradually highlighted, next generation's interconnection
Transmission rate and electricity bandwidth requirement are gradually increased, and electricity interlinkage is extremely restricted.High density, low-power consumption direction on,
Optical interconnection has a extensive future.Since IC characteristic size is smaller and smaller, lead to the reduction of interconnecting line cross section and line spacing,
Ghost effect caused by resistance, capacitor, inductance increasingly influences the performance of circuit, and interconnection RC delay becomes limitation overall signal and passes
Broadcast the major reason of rate.Overcome electricity interlinkage bring to be lost and reflection, reduces photonic device and electron device package
Interconnection length has become the major issue of optoelectronic package.
In the prior art, silicon-based technologies tend to be mature substantially, based on CMOS integrated modulator, laser, optical waveguide with
And the interchip communication technology of photodetector is just commercialized.On the monosilicon with VLSI Integration ofTechnology modulator, optical waveguide,
The optical modules such as detector, photoswitch are feasible.Optical module usually is integrated at the edge of plate, this optical module is due to physical location
Reason, the distance apart from chip is longer, and loss is larger, and interconnection density is lower.Also, outside piece in optical module, usually using silicon
The devices such as optical device and EAM, although its end coupling can support the light emitting devices of high bandwidth to polarization insensitive,
It is that coupling redundancy is big.In addition, in the prior art, usual encapsulating material is lost higher using resin or ceramics etc., it is difficult to
Form the gain to optical-electric module channel and wavelength.
Onboard optical module, which is generallyd use, couples each electron-like and photonic device based on eyeglass or active mode, and use can
Plug optical interface is connect with PCB, can be reduced PCB substrate face occupied space, be reduced the loss of signal, guarantees channel high-transmission energy
Power, fast and flexible assembly and disassembly, convenient to use and replacement.In recent years, to meet to the low-power of VLSI integrated circuit, light
The manufacturing requirements of type and compact package produces 3D encapsulation technology, obtains in terms of photoelectric hybrid integrated circuit miniaturization
It is extremely improved, simultaneously as the total interconnection length of 3D encapsulation technology is shorter, system power dissipation can reduce about 30%.Onboard optical mode
Block and 3D encapsulation have become the developing direction in integrated optoelectronic circuit future at present.
Summary of the invention
Optical-electric module encapsulating structure provided by the invention based on photoelectricity hybrid integrated, is able to carry out high bandwidth, low-loss
Light network signal propagate.
In a first aspect, the present invention provides a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；Key
Close planar photonic circuit support plate on the substrate；It is connected to the optical fiber connector of planar photonic circuit support plate；It is located at
In the support plate of the planar photonic circuit and first optical waveguide parallel with the substrate surface；It is vertical mutual in the substrate
Link structure and its pad；Integrated lens, photonic device and electronic device on the substrate；And it is located at the photonic device
The radiator of top；The wherein photonic device and described first optical waveguide coupled.
Optionally, between the photonic device and first optical waveguide, the photonic device passes through said lens
Lens and described first optical waveguide coupled.
Optionally, above-mentioned optical-electric module encapsulating structure further include the radiator and planar photonic circuit support plate it
Between, the sealing device between the radiator and the substrate, for being sealed to the photonic device and the lens.
Optionally, above-mentioned photonic device further includes inside the photonic device and parallel with the substrate surface the
Two optical waveguides, the photonic device are optical waveguide coupled by evanescent waves and described first.
Optionally, above-mentioned optical-electric module encapsulating structure is only packaged the photonic device, and flexibly integrates the electricity
Sub- device.
Optionally, above-mentioned optical-electric module encapsulating structure carries out three-dimension packaging to the photonic device and the electronic device.
Optionally, above-mentioned photonic device and the electronic device pass through glass through-hole technology or through silicon via technology described
It is stacked in the vertical direction of substrate.
Optionally, above-mentioned optical-electric module encapsulating structure is integrated in flexible print wiring with transistor package pot type packing forms
On plate.
Optionally, above-mentioned optical-electric module encapsulating structure is encapsulated in conjunction with the substrate and motherboard, is formed plate glazing and is received and dispatched mould
Block.
Optionally, above-mentioned planar photonic circuit support plate is bonded on the substrate by glue.
Optionally, aforesaid substrate material is glass.
Optionally, above-mentioned optical fiber connector be FC type optical fiber connector, SC type optical fiber connector, ST type optical fiber connector,
LC type optical fiber connector or MT-RJ type connector.
Optionally, above-mentioned radiator is metal or silicon heat-conducting plate or cooling fin or thermoelectric cooling unit.
Optionally, above-mentioned photonic device is electroabsorption modulator, MZM modulator, directly modulates laser or light emitting
Receiving device.
Optionally, above-mentioned electronic device is driving or the amplifying circuit of the photonic device.
Optionally, above-mentioned photonic device and the electronic device are bonded on the substrate by upside-down mounting welding core technique,
And it is interconnected by the interconnection line on the planar photonic circuit support plate surface.
Optical-electric module encapsulating structure provided in an embodiment of the present invention based on photoelectricity hybrid integrated, is suitable for onboard optical module
And optical transceiver module, the encapsulating structure support optical encapsulant encapsulation, using low-loss material as encapsulating material, support high frequency
Signal transmission.The encapsulating structure reduces interconnection loss by electronic chip and photon chip close to assembling simultaneously.The encapsulating structure
Integrated planar optical waveguide material, such as glass can be realized wavelength-division multiplex (WDM) function, expand photoelectricity hybrid integrated module
Port number and wavelength.
Detailed description of the invention
Fig. 1 shows the schematic diagram of photoelectricity hybrid integrated structure；
Fig. 2 shows the schematic diagrames for the photoelectricity hybrid integrated structure being only packaged to photon chip；
Fig. 3 shows the photoelectricity hybrid integrated structural schematic diagram that three-dimension packaging is carried out to photonic device and electronic device；
Fig. 4 shows the schematic diagram of the photoelectricity hybrid integrated structure applied to the encapsulation of transistor outline pot type；
Fig. 5 shows the schematic diagram to form the photoelectricity hybrid integrated structure of optical transceiver module on plate；
Fig. 6 shows the schematic diagram of the photoelectricity hybrid integrated structure with photonic device waveguide；
Fig. 7 shows the photoelectricity mixing with photonic device waveguide that three-dimension packaging is carried out to photonic device and electronic device
The schematic diagram of integrated morphology；
Fig. 8 shows the photoelectricity hybrid integrated structure with photonic device waveguide applied to the encapsulation of transistor outline pot type
Schematic diagram；
Fig. 9 shows the signal to form the photoelectricity hybrid integrated structure with photonic device waveguide of optical transceiver module on plate
Figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 1 shows the schematic diagram of photoelectricity hybrid integrated structure.Wherein, it 1 is connected for fiber coupling connector or optical fiber
Device accesses the fibre-optical splice of optical module, optional to be connected using FC type optical fiber connector, SC type optical fiber connector, ST type optical fiber
Device, LC type optical fiber connector or MT-RJ type connector.2 be sealing material, for photon device more sensitive in protective module
Part can select to use according to the service condition of photonic device.The sealing material has preferably good to upper and lower part material
Adhesiveness well, excellent flexible and excellent durability, can be used ultraviolet curing or heat cure vinyl acetate contain
Higher vinyl-vinyl acetate copolymer is measured, or is formed by materials such as thermosetting epoxy resin, glass pastes.302 are
Planar photonic circuit (PLC) support plate, 301 be the optical waveguide in the support plate of planar photonic circuit, such as based on silicon, GaAs, glass
Planar medium optical waveguide, film or flat waveguide made of equal substrates, waveguide array, array waveguide grating (AWG) or rarefaction wave
The waveguide devices such as division multiplexer (CWDM).4 be radiator, such as by increasing copper foil layer or thermal vias come reinforcing effect
Metal or silicon heat-conducting plate or cooling fin or thermoelectric cooling (TEC) device etc..5 be lens, in particular with semiconductor devices
The integral lens that itself is formed, for eyeglass collimation, focusing and mould field matching, to be obtained most between optical-electric module and optical fiber
Big coupling.6 be photonic device, such as electroabsorption modulator (EAM), MZM modulator, directly modulation laser (DML) or light
Transceiver part.In photoelectricity hybrid integrated structure, the Waveguide end face of photonic device 6 passes through lens 5 and PLC fiber waveguide device
Coupling, size and the matched PLC fiber waveguide device of optical fiber mode fields can integrate optical wavelength division multiplexing/demultiplexing function, can also be with
It is parallel waveguide array, is coupled by coupling with optical fiber with the external world.7 be electronic device, such as the drive of photonic device
Dynamic or received amplifying circuit.Photonic device 6 and electronic device 7 can be bonded to glass substrate by upside-down mounting welding core technique
On, and can be interconnected by the interconnection line of glass substrate upper surface.8 be glass substrate, planar photonic circuit (PLC) support plate
302 and glass substrate 8 be bonded by the layer 801 of bonding, 801 can be glue, and 9 be vertical interconnecting structure and the weldering that is connected
Disk.
Further, it as shown in Fig. 2, photoelectricity hybrid integrated structure can only be packaged photon chip, is used for and electric
Sub- device flexibly integrates.2 be sealing material, and 302 be planar photonic circuit (PLC) support plate, and 301 is in the support plates of planar photonic circuit
Optical waveguide, 4 be radiator, and 5 be lens, and 6 be photonic device, and 8 be glass substrate, planar photonic circuit (PLC) support plate 302
It is bonded with glass substrate 8 by glue layer 801,9 be vertical interconnecting structure and the pad being connected.
Further, as shown in figure 3, photoelectricity hybrid integrated structure can carry out 3D envelope to photonic device and electronic device
Dress, 3D encapsulation enable to the photoelectric hybrid integrated circuit to minimize.302 be planar photonic circuit (PLC) support plate, and 301 be flat
Optical waveguide in the photon circuit support plate of face, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Substrate, planar photonic circuit (PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801,9 for perpendicular interconnection structure with
And the pad being connected.Preferably, electronic device 7 and photonic device 6 are packaged in the z-axis direction of glass substrate, and in z-axis direction
Electron device package is above photonic device.Furthermore it is possible to be decided whether to carry out light according to the functional requirement of integrated morphology
Sub- device 6 and electronic device 7 are sealed operation.Preferably, glass through-hole technology (TGV) or through silicon via technology can be passed through
(TSV) stacking of photonic device and electronic device in vertical direction is realized.
Further, as shown in figure 4,302 be planar photonic circuit (PLC) support plate, 301 is in the support plates of planar photonic circuit
Optical waveguide, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass substrate, planar photonic circuit
(PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801,9 structure and the pad that is connected for perpendicular interconnection.It should
Photoelectricity hybrid integrated structure can be applied in TO-CAN encapsulation, need integrated with flexible print wiring board (FPCB) 10.FPCB
It can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC etc..
Further, as shown in figure 5,2 be sealing material, 302 be planar photonic circuit (PLC) support plate, and 301 be planar light
Optical waveguide in sub-loop support plate, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass substrate,
Planar photonic circuit (PLC) support plate 302 and glass substrate 8 are bonded by glue layer 801, and 9 be the structure and phase of perpendicular interconnection
The pad of connection.Electronic device 7 and photonic device 6 in the photoelectricity hybrid integrated module can integrate reception and sending function, should
Photoelectricity hybrid integrated module can form plate in conjunction with grid array (LGA) encapsulation of substrate and the socket encapsulation of motherboard 11
Upper optical transceiver module.
Shown in Fig. 6,1 is fiber coupling connector or optical fiber connector, that is, accesses the fibre-optical splice of optical module, optional to make
It is connected with FC type optical fiber connector, SC type optical fiber connector, ST type optical fiber connector, LC type optical fiber connector or MT-RJ type
Device.20 be photonic device waveguide；302 be planar photonic circuit (PLC) support plate, and 301 be the light wave in the support plate of planar photonic circuit
Lead, based on planar medium optical waveguide, film or flat waveguide, waveguide array made of the substrates such as silicon, GaAs, glass,
The waveguide devices such as array waveguide grating (AWG) or coarse wavelength division multiplexer device (CWDM).4 be radiator, such as by increasing copper
Layers of foil or thermal vias carry out the metal or silicon heat-conducting plate or cooling fin or thermoelectric cooling (TEC) device etc. of reinforcing effect.5
For lens, the integral lens formed in particular with semiconductor devices itself are matched for mould field, thus in optical-electric module and light
Maximum coupling is obtained between fibre.6 be photonic device, such as electroabsorption modulator (EAM), MZM modulator, directly modulation laser
(DML) or light emitting receiving device.In photoelectricity hybrid integrated structure, the Waveguide end face of photonic device 6 passes through evanescent waves coupling
Close the optical waveguide 301 in planar photonic circuit (PLC) support plate 302.PLC optical waveguide 301 can integrate optical wavelength division multiplexing/demultiplex
Function is also possible to parallel waveguide array, is coupled by coupling with optical fiber with the external world.According to photonic device
Perhaps subsequent use demand can choose and is sealed to photonic device 6 or non-tight, sealing material should have 6 characteristic
Preferably to the good adhesiveness of upper and lower part material, excellent flexible and excellent durability, it is solid that ultraviolet light can be used
Change the perhaps higher vinyl-vinyl acetate copolymer of heat cure vinyl acetate content or by thermosetting epoxy resin, glass
The materials such as glass slurry and formed.7 be electronic device, driving or received amplifying circuit such as photonic device.6 He of photonic device
Electronic device 7 can be bonded on glass substrate by upside-down mounting welding core technique, and can pass through glass substrate upper surface
Interconnection line interconnection.8 be 801 key of layer of glass substrate, planar photonic circuit (PLC) support plate 302 and glass substrate 8 by bonding
It closes, 801 can be glue, 9 structure and the pad that is connected for perpendicular interconnection.
Further, as shown in fig. 7, can carry out 3D encapsulation to photonic device and electronic device, 3D encapsulation is enabled to
Photoelectric hybrid integrated circuit miniaturization.20 be photonic device waveguide, and 302 be planar photonic circuit (PLC) support plate, and 301 be flat
Optical waveguide in the photon circuit support plate of face, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Substrate, planar photonic circuit (PLC) support plate 302 and glass substrate 8 are bonded by the layer 801 of bonding, and 801 can be glue, and 9 are
The structure of perpendicular interconnection and the pad being connected.Preferably, electronic device 7 and photonic device 6 are packaged in the z-axis of glass substrate
Direction, and be packaged in below photonic device 6 in z-axis direction electronic device 7.Furthermore it is possible to according to the functional requirement of integrated morphology
Decide whether that carrying out photonic device 6 and electronic device 7 is sealed operation.Preferably, glass through-hole technology can be passed through
(TGV) or through silicon via technology (TSV) realizes the stacking of photonic device and electronic device in vertical direction.
Further, as shown in figure 8,20 be photonic device waveguide, 302 be planar photonic circuit (PLC) support plate, and 301 are
Optical waveguide in the support plate of planar photonic circuit, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Glass substrate, planar photonic circuit (PLC) support plate 302 and glass substrate 8 by bonding layer 801 be bonded, 801 can be glue, 9
Structure for perpendicular interconnection and the pad that is connected.The photoelectricity hybrid integrated structure can be applied in TO-CAN encapsulation, need
It is integrated with flexible print wiring board (FPCB) 10.FPCB can be S/sFPCB, D/sFPCB, MLFPCB, RIGID-FPC etc..
Further, as shown in figure 9,20 be photonic device waveguide, 302 be planar photonic circuit (PLC) support plate, and 301 are
Optical waveguide in the support plate of planar photonic circuit, 4 be radiator, and 5 be lens, and 6 be photonic device, and 7 be electronic device, and 8 be glass
Glass substrate, planar photonic circuit (PLC) support plate 302 and glass substrate 8 by bonding layer 801 be bonded, 801 can be glue, 9
Structure for perpendicular interconnection and the pad that is connected.Electronic device 7 and photonic device 6 in the photoelectricity hybrid integrated module can
Integrated reception and sending function, which can encapsulate in conjunction with the grid array (LGA) of substrate and motherboard
11 socket encapsulation, forms optical transceiver module on plate.
Optical-electric module encapsulating structure based on photoelectricity hybrid integrated provided by the embodiment of the present invention, is suitable for onboard light
Module and optical transceiver module, the encapsulating structure support optical encapsulant encapsulation, using low-loss material as encapsulating material, support
High frequency signal transmission.The encapsulating structure reduces interconnection loss by electronic chip and photon chip close to assembling simultaneously.The encapsulation
Structure integrated planar optical waveguide material, such as glass can be realized wavelength-division multiplex (WDM) function, expand photoelectricity hybrid integrated mould
The port number and wavelength of block.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by those familiar with the art, all answers
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (13)
1. a kind of optical-electric module encapsulating structure based on photoelectricity hybrid integrated, including substrate；The plane of bonding on the substrate
Photon circuit support plate；It is connected to the optical fiber connector of planar photonic circuit support plate；Positioned at planar photonic circuit support plate
The first interior and parallel with substrate surface optical waveguide；Vertical interconnecting structure and its pad in the substrate；It is integrated
Lens, photonic device and electronic device on the substrate；And the radiator above the photonic device；It is special
Sign is:
The photonic device and described first optical waveguide coupled；
The electronic device is driving or the amplifying circuit of the photonic device；
For the lens between the photonic device and first optical waveguide, the photonic device passes through lens and described the
One is optical waveguide coupled；
The optical-electric module encapsulating structure further includes between the radiator and planar photonic circuit support plate, the heat dissipation
Sealing device between device and the substrate, for being sealed to the photonic device and the lens.
2. optical-electric module encapsulating structure according to claim 1, which is characterized in that the photonic device further includes being located at institute
It states inside photonic device and second optical waveguide parallel with the substrate surface, the photonic device passes through evanescent waves and described the
One is optical waveguide coupled.
3. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the optical-electric module encapsulating structure
Only the photonic device is packaged, and flexibly integrates the electronic device.
4. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the optical-electric module encapsulating structure
Three-dimension packaging is carried out to the photonic device and the electronic device.
5. optical-electric module encapsulating structure according to claim 4, which is characterized in that the photonic device and the electronics device
Part is stacked in the vertical direction of the substrate by glass through-hole technology or through silicon via technology.
6. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the optical-electric module encapsulating structure
It is integrated on flexible print wiring board with transistor package pot type packing forms.
7. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the optical-electric module encapsulating structure
It is encapsulated in conjunction with the substrate and motherboard, forms optical transceiver module on plate.
8. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that planar photonic circuit support plate
On the substrate by glue bonding.
9. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the baseplate material is glass.
10. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the optical fiber connector is FC type
Optical fiber connector, SC type optical fiber connector, ST type optical fiber connector, LC type optical fiber connector or MT-RJ type connector.
11. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the radiator be metal or
Silicon heat-conducting plate or cooling fin or thermoelectric cooling unit.
12. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the photonic device is electric absorption
Modulator, directly modulates laser or light emitting receiving device at MZM modulator.
13. optical-electric module encapsulating structure according to claim 1 or 2, which is characterized in that the photonic device and the electricity
Sub- device is bonded on the substrate by upside-down mounting welding core technique, and passes through the interconnection on the planar photonic circuit support plate surface
Line interconnection.
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| CN111129941B (en) * | 2019-11-21 | 2021-06-01 | 东南大学 | Silicon-based integrated laser chip flip-chip coupling structure |
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| CN113241329B (en) | 2021-04-30 | 2022-06-17 | 杭州光智元科技有限公司 | Three-dimensional packaging method and packaging structure of photoelectric chip |
| CN116299902B (en) * | 2021-07-01 | 2024-05-28 | 上海曦智科技有限公司 | Packaging structure and packaging method thereof |
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| KR100753818B1 (en) * | 2005-12-09 | 2007-08-31 | 한국전자통신연구원 | High power planar lightwave circuit optical Tx module and Tx/Rx module |
| JP5050548B2 (en) * | 2007-02-07 | 2012-10-17 | 日本電気株式会社 | Optical module |
| JP5313983B2 (en) * | 2010-09-07 | 2013-10-09 | 日本電信電話株式会社 | Optical module |
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