CN103513333B - A kind of silica-based nanowire mixing right-angled intersection device - Google Patents
A kind of silica-based nanowire mixing right-angled intersection device Download PDFInfo
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- CN103513333B CN103513333B CN201310512245.8A CN201310512245A CN103513333B CN 103513333 B CN103513333 B CN 103513333B CN 201310512245 A CN201310512245 A CN 201310512245A CN 103513333 B CN103513333 B CN 103513333B
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Abstract
The invention discloses a kind of silica-based nanowire mixing right-angled intersection device, this interleaver comprises two groove waveguides mode switching units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide and right-angled intersection multimode waveguides, and two groove waveguides mode switching units are connected with right-angled intersection multimode waveguide respectively by sinusoidal pattern conversion waveguide with two slab waveguide mode switching units; Each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit; Each groove waveguides mode switching unit comprises the groove waveguides and mode converter that input for light signal, and mode converter is connected between groove waveguides and sinusoidal pattern conversion waveguide; Each slab waveguide mode switching unit comprises the slab waveguide and single mode waveguide that export for light signal, and single mode waveguide is connected between slab waveguide and sinusoidal pattern conversion waveguide.This right-angled intersection utensil has the advantages such as transfer efficiency is high, compact conformation, loss is low, manufacture difficulty is low, relative low price.
Description
Technical field
The invention belongs to integrated photonics technical field, specifically, relate to a kind of silica-based nanowire mixing right-angled intersection device.
Background technology
Waveguide interleaver, as the class function element in integreted phontonics loop, has important effect in signal route with the integrated level of raising device.Direct slab guide intersects, and because light field is in the obvious diffraction in waveguide crossing center place, loss and crosstalk is greatly increased.Especially for the material of high index-contrast as silicon-on-insulator, loss and crosstalk are very serious, and this greatly have impact on the performance of waveguide interleaver, constrain its application in integrated optical device field.Therefore, develop the waveguide interleaver meeting application demand, there is the very important meaning.In recent years, researcher, for the waveguide interleaver of low-loss, low crosstalk, has carried out large quantifier elimination.Such as adopt the interleaved scheme of mode expansion type, the mould field of waveguide infall is limited in reduce loss and crosstalk in a larger scope, but the manufacturing process of two etching adds the manufacturing cost of device.In addition, use vertical manufacturing process can obtain good device performance to manufacture waveguide interleaver, but relative to planar technology, this manufacture method obviously want complicated many, and manufacturing cost is also relatively high.Although at present these schemes can the loss of reduction waveguide interleaver in various degree and crosstalk, improve the performance of device, but manufacture difficulty is all higher, be not suitable for large-scale application, and cross-over design method is all only for the strip structure waveguide of single type, this greatly limits the range of application of waveguide interleaver.
Current groove waveguides, as the waveguide of a class formation novelty, after first being put forward, receives the concern of many researchists since 2004 very soon by the MichalLipson of Cornell University professor team.The mode distributions of this waveguide is obviously different from the mode distributions of slab waveguide, the mould field of slab waveguide is mainly distributed in the sandwich layer of waveguide, and for groove waveguides, according to the boundary relation of electromagnetic field, in the material interface distributed perpendicular to high index-contrast, will there is uncontinuity in electric field component, because the width of groove is much smaller than the characteristic decay length of groove both sides slab waveguide, electric field is greatly strengthened in the groove of low-refraction, and corresponding mould field also will concentrate on microflute region.Based on the field enhancement effect of this uniqueness, many photonic devices are in succession suggested or create, such as: photomodulator, polarization beam apparatus, micro-ring resonator, directional coupler, wavelength division multiplexer, biological/chemical sensor etc.These devices show transport property visibly different with slab waveguide device, in order to realize the mutual supplement with each other's advantages of these two kinds of dissimilar waveguide devices, single-chip integration will be a good solution, and wherein the application of efficient waveguide interleaver will be conducive to the raising of single-chip integration density.Therefore, design that structure is simple, transfer efficiency is high, silica-based nanowire mixing right-angled intersection device that is easily manufactured, relative low price will highly significant.
Summary of the invention
Technical matters: technical matters to be solved by this invention is: provide a kind of silica-based nanowire mixing right-angled intersection device, this right-angled intersection utensil has the advantages such as transfer efficiency is high, compact conformation, loss is low, manufacture difficulty is low, relative low price.
Technical scheme: for solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of silica-based nanowire mixing right-angled intersection device, this interleaver comprises two groove waveguides mode switching units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide and right-angled intersection multimode waveguides, and two groove waveguides mode switching units are connected with right-angled intersection multimode waveguide respectively by sinusoidal pattern conversion waveguide with two slab waveguide mode switching units; Each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit; Each groove waveguides mode switching unit comprises the groove waveguides and mode converter that input for light signal, and mode converter is connected between groove waveguides and sinusoidal pattern conversion waveguide; Each slab waveguide mode switching unit comprises the slab waveguide and single mode waveguide that export for light signal, and single mode waveguide is connected between slab waveguide and sinusoidal pattern conversion waveguide.
Beneficial effect: compared with prior art, technical scheme of the present invention has following beneficial effect:
1, transfer efficiency is high, loss is low.Owing to introducing right-angled intersection multi-mode wave guiding structure at waveguide infall, for existing direct waveguide intersects, this structure can make incident field be converged to reduce the width of incident field in multimode waveguide at waveguide crossing center place, crosstalk and diffraction loss that corresponding reduction brings because waveguide intersects, transfer efficiency also will significantly improve, this external input waveguide, adding corresponding mode transition structure between output waveguide and right-angled intersection multimode waveguide for efficiently changing the pattern of different waveguide, can further improve transmission and coupling efficiency.
2, manufacture difficulty is low, reliability is high.The waveguiding structure used in the present invention, as the characteristic dimension all larger (all in micron or sub-micrometer scale) of the mode converter, single mode waveguide etc. of right-angled intersection multimode waveguide, sinusoidal pattern conversion waveguide, logarithmic, this requirement of will relax actual photon device fabrication equipment characteristic dimension, reduce manufacture difficulty, corresponding device reliability also can be guaranteed.
3, the efficient conversion of different waveguide pattern can be realized.Because input waveguide pattern is different with output waveguide pattern, add two kinds of mode switching units in the present invention, groove waveguides mode switching unit and slab waveguide mode switching unit respectively, and sinusoidal pattern transformed wave guide structure is in order to reduce the reflection loss that brings due to different waveguide direct-coupling and end coupling loss, improves mode conversion efficiency.
4, compact conformation, easy to make, with low cost.The present invention, owing to have employed the silicon-on-insulator material of high index-contrast, makes overall device structure have higher compactedness.Silica-based nanowire waveguiding structure material is cheap, and compatible, easy to make with the CMOS processing technology of maturation, can realize silicon-based monolithic integrated, have huge development potentiality in integrated photonics field.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is the principal component mode distributions figure of the accurate transverse electric mode of bar shaped waveguiding structure in the present invention.
Fig. 3 is the principal component mode distributions figure of the accurate transverse electric mode of middle slot waveguiding structure of the present invention.
Fig. 4 is the structural representation of mode converter in the present invention.
Fig. 5 is the variation relation of mode converter transfer efficiency and its first length in the present invention.
Fig. 6 is the variation relation of mode converter transfer efficiency and its second length in the present invention.
Fig. 7 is the variation relation of mode converter transfer efficiency and operation wavelength in the present invention.
Fig. 8 is the transmission mode field pattern of mode converter in the present invention.
Fig. 9 is transmission mode field pattern of the present invention, and wherein, horizontal ordinate represents the size of device transverse direction, unit: micron (μm); Ordinate represents the size of device transmission direction, unit: micron (μm).
Figure 10 gives the transmission mode field pattern of the first slab waveguide structure, and wherein, horizontal ordinate represents the size of device transverse direction, unit: micron (μm); Ordinate represents the size of device transmission direction, unit: micron (μm).
Figure 11 gives the transmission mode field pattern of the second slab waveguide structure, and wherein, horizontal ordinate represents the size of device transverse direction, unit: micron (μm); Ordinate represents the size of device transmission direction, unit: micron (μm).
Have in figure: groove waveguides 1, slab waveguide 2, right-angled intersection multimode waveguide 3, single mode waveguide 4, mode converter 5, sinusoidal pattern conversion waveguide 6.
Embodiment
Below in conjunction with accompanying drawing, be described principle of the present invention and feature, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of silica-based nanowire mixing right-angled intersection device of the present invention, comprises two groove waveguides mode switching units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide 6 and right-angled intersection multimode waveguides 3.Two groove waveguides mode switching units are connected with right-angled intersection multimode waveguide 3 respectively by sinusoidal pattern conversion waveguide 6 with two slab waveguide mode switching units.Each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit.Each groove waveguides mode switching unit comprises the groove waveguides 1 and mode converter 5 that input for light signal, and mode converter 5 is connected between groove waveguides 1 and sinusoidal pattern conversion waveguide 6.Each slab waveguide mode switching unit comprises the slab waveguide 2 and single mode waveguide 4 that export for light signal.Single mode waveguide 4 is connected between slab waveguide 2 and sinusoidal pattern conversion waveguide 6.
The transmission feature of light signal in the mixing right-angled intersection device of said structure is as follows: incident optical signal inputs from groove waveguides 1, adiabatically change the pattern of slab waveguide through mode converter 5 into, enter sinusoidal pattern conversion waveguide 6 and right-angled intersection multimode waveguide 3 and motivate multiple pattern and produce multiple-mode interfence phenomenon.Based on the Self imaging effect of multiple-mode interfence, the light field of incoming signal will converge again from image length place, select the length of right-angled intersection multimode waveguide 3 to be twice from image length, make light field just converge reduces crosstalk that intersection brings and diffraction loss at the crossing center place of right-angled intersection multimode waveguide 3.When light field exports from right-angled intersection multimode waveguide 3, enter sinusoidal pattern conversion waveguide 6 and single mode waveguide 4, and finally export from straight-through slab waveguide 2 end.Interleaver of the present invention, the light signal entered from input waveguide can export from output waveguide efficiently after mixing right-angled intersection device, produces lower insertion loss, crosstalk and diffraction loss, thus realizes the mixing Cross transfer of different waveguide signal.The advantages such as the present invention has compact conformation, loss is low, manufacture difficulty is low, relative low price.
In the mixing right-angled intersection device of said structure, each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit.That is, two groove waveguides mode switching units are disposed adjacent, and two slab waveguide mode switching units are disposed adjacent, and each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit.This kind of vibrational power flow, is mainly used in the Cross transfer problem solving different waveguide input and output, is different from the situation that current input and output waveguide is identical.In the silicon-based monolithic Integrated design process of reality, often run into the situation of different waveguide input and output, therefore the present invention is mainly used in the mixing Cross transfer problem solving different input and output waveguide.
The making material of above-mentioned device all adopts silicon-on-insulator material, namely the material of groove waveguides 1, slab waveguide 2, mode converter 5, sinusoidal pattern conversion waveguide 6, right-angled intersection multimode waveguide 3, single mode waveguide 4 is silicon, and the material of substrate and covering is silicon dioxide.The microflute area filling low-index material of groove waveguides 1, such as, fill the materials such as silicon dioxide, silicon nanocrystal or polymkeric substance.The refractive index of these materials is all little than the refractive index of silicon, and difference is about 2.
Further, two described groove waveguides mode switching units and the identical length etc. of two slab waveguide mode switching units.The length of four unit is identical, can reduce crosstalk, improves Cross transfer efficiency and facilitate the manufacture of practical devices.
Further, described mode converter 5 comprises the first wave guide region that is connected with groove waveguides 1 and changes with sinusoidal pattern the second waveguide region that waveguide 6 is connected, and first wave guide region is directly connected according to waveguide corresponding relation with the second waveguide region.In first wave guide region, the duct width of link slot waveguide 1 side adopts logarithmic curve to arrange, and the waveguide of opposite side and the width of corresponding microflute remain unchanged.In the second waveguide region, the side duct width connecting first wave guide region remains unchanged, and opposite side duct width adopts logarithmic curve to arrange, and the width of microflute adopts reciprocal logarithmic relationship to change.
Fig. 4 is the structural representation of mode converter.Duct width in mode converter 5 adopts the design of logarithmic curvilinear structures, to make pattern between groove waveguides and slab waveguide close to adiabatic conversion, thus realizes efficient patten transformation.The length of carrying out the mode converter changed from groove waveguides to slab waveguide is defined as the first length l successively
1with the second length l
2, the first length l
1the length in the first wave guide region be connected with groove waveguides in mode converter 5; Second length changes the length of the second waveguide region that waveguide 6 is connected in mode converter 5.
Fig. 5 is the variation relation of mode converter transfer efficiency and its first length, and wherein transfer efficiency is defined as the power of mode converter output terminal and the ratio of its input end power.Along with the increase transfer efficiency of mode converter first length increases very fast during beginning, but transfer efficiency is tending towards saturated gradually when the first length is greater than 3 μm.In conjunction with the variation relation of transfer efficiency, preferably arranging the first length is 4 μm.Fig. 6 is the variation relation of mode converter transfer efficiency and its second length, there are two peak values in the increase transfer efficiency along with mode converter second length, lay respectively at 2.4 μm and 3.6 μm of places, consider the compactedness of device architecture, select the second length to be 2.4 μm.Fig. 7 is the variation relation of mode converter transfer efficiency and operation wavelength, in the transfer efficiency of the wavelength coverage internal schema converters of 1.45 μm to 1.65 μm all higher than 98%, the communication wavelengths place transfer efficiency of 1.55 μm especially close to 99%, therefore this kind of utilization of mode converter in mixing right-angled intersection device will be conducive to the lifting of overall device performance.Fig. 8 is the transmission mode field pattern in mode converter, obviously can see that the light patterns of groove waveguides and slab waveguide achieves transmission efficiently and conversion by this converter.
Further, the waveguiding structure that described sinusoidal pattern conversion waveguide 6 adopts width to change sinusoidally, for realizing the patten transformation between single mode waveguide 4 and right-angled intersection multimode waveguide 3.Mode converter 5 adopts logarithmic curvilinear structures to design, for realizing efficient patten transformation between groove waveguides 1 and slab waveguide 2.
The invention discloses a kind of silica-based nanowire mixing right-angled intersection device, aim to provide a kind of compact conformation, superior performance, manufacturing process simple, be easy to integrated hybrid waveguide cross-over design, can be used for the field such as optical communication and integrated photonics.Light inputs from groove waveguides 1, and export at equidirectional slab waveguide 2, mode converter 5 is introduced at groove waveguides 1 output terminal, in order to realize the efficient conversion of the inter mode of groove waveguides 1 and slab waveguide 2, and the sinusoidal pattern conversion waveguide 6 for realizing patten transformation between single mode waveguide 4 and right-angled intersection multimode waveguide 3.Add right-angled intersection multimode waveguide 3 at waveguide infall, make the one-piece construction of device become simply compact, corresponding loss becomes very little simultaneously.
The sandwich layer of slab waveguide is silicon, and covering adopts earth silicon material, and the covering of groove waveguides is silicon dioxide, and the material (as: silicon dioxide etc.) of groove area filling low-refraction, the Nanowire Waveguides of both sides, groove region is silicon materials.
Fig. 2 is the principal component mode distributions figure of the accurate transverse electric mode of slab waveguide, and the mould field of slab waveguide is mainly distributed in waveguide core layer.Fig. 3 is the principal component mode distributions figure of groove waveguides Structure Quasi transverse electric mode, and the mould field of groove waveguides has then occurred obvious enhancing in microflute region.The mutual conversion of pattern between the two can be realized by using forestland converter 5.Fig. 9 shows transmission mode field pattern of the present invention, and the light field of input can pass through right-angled intersection device efficiently, is transferred to corresponding output port.As a comparison, Figure 10 gives the transmission mode field pattern of the first slab waveguide structure.This slab waveguide structure adopts the version of the direct right-angled intersection of slab waveguide.As can be seen clearly from figure 10 make incident field serious in infall loss because waveguide intersects.Figure 11 gives the transmission mode field pattern of the second slab waveguide structure.This slab waveguide structure adopts and adds multimode waveguide at slab waveguide crossing center place, and the slab waveguide of surrounding adopts tapering transition structure and multimode waveguide to carry out the version be connected.Compared with the first slab waveguide structure, the second slab waveguide structure can improve the transport property that waveguide intersects preferably, but the connected mode of the multimode waveguide and surrounding slab waveguide that are positioned at center need to improve, such as, at waveguide link, slab waveguide does not mate with the width of multimode waveguide, can bring coupling loss and the reflection loss of part thus; The kind of the waveguide of input and output simultaneously should not be confined to single slab waveguide structure yet.Comparison diagram 9 and Figure 11 can see, the transverse port of device shown in Figure 11 has portion of energy to export, and corresponding to crosstalk, also have portion of energy there occurs diffraction at crossing center and scatter out along transmission direction, corresponding to diffraction loss in the transmit direction simultaneously.And structure of the present invention, substantially reduce this two kinds of dominant loss as can be seen from Fig. 9, improve transfer efficiency.Therefore, technical scheme of the present invention and the optical signal transmission characteristics that obtains obviously are better than existing slab waveguide interleaver.
Content described in this instructions embodiment is only enumerating the way of realization of inventive concept; protection scope of the present invention should not be regarded as being only limitted to the concrete form that embodiment is stated, protection scope of the present invention also and the equivalent technologies means can expected according to inventive concept in those skilled in the art.
Claims (4)
1. a silica-based nanowire mixing right-angled intersection device, it is characterized in that, this interleaver comprises two groove waveguides mode switching units, two slab waveguide mode switching units, sinusoidal pattern conversion waveguide (6) and right-angled intersection multimode waveguides (3), and two groove waveguides mode switching units are changed waveguide (6) with two slab waveguide mode switching units respectively by sinusoidal pattern and are connected with right-angled intersection multimode waveguide (3); Each groove waveguides mode switching unit is relative with a slab waveguide mode switching unit; Each groove waveguides mode switching unit comprises the groove waveguides (1) and mode converter (5) that input for light signal, and mode converter (5) is connected between groove waveguides (1) and sinusoidal pattern conversion waveguide (6); Each slab waveguide mode switching unit comprises the slab waveguide (2) and single mode waveguide (4) that export for light signal, and single mode waveguide (4) is connected between slab waveguide (2) and sinusoidal pattern conversion waveguide (6).
2. according to silica-based nanowire mixing right-angled intersection device according to claim 1, it is characterized in that, two described groove waveguides mode switching units and the identical length etc. of two slab waveguide mode switching units.
3. according to silica-based nanowire mixing right-angled intersection device according to claim 1, it is characterized in that, described mode converter (5) comprises the first wave guide region that is connected with groove waveguides (1) and changes with sinusoidal pattern the second waveguide region that waveguide (6) is connected, and first wave guide region is directly connected with the second waveguide region; In first wave guide region, the duct width of link slot waveguide (1) side adopts logarithmic curve to arrange, and the waveguide of opposite side and the width of corresponding microflute remain unchanged; In the second waveguide region, the side duct width connecting first wave guide region remains unchanged, and opposite side duct width adopts logarithmic curve to arrange, and the width of microflute adopts reciprocal logarithmic relationship to change.
4. according to silica-based nanowire mixing right-angled intersection device according to claim 1, it is characterized in that, the waveguiding structure that described sinusoidal pattern conversion waveguide (6) adopts width to change sinusoidally, for realizing the patten transformation between single mode waveguide (4) and right-angled intersection multimode waveguide (3).
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| CN103760637B (en) * | 2014-02-10 | 2017-02-22 | 南京大学 | Minitype high-performance orthogonal silicon waveguide structure |
| CN104090331B (en) * | 2014-06-30 | 2017-01-11 | 北京工业大学 | Efficient compact rectangular ring resonant cavity waveguide type optical filter |
| WO2016008116A1 (en) * | 2014-07-16 | 2016-01-21 | 华为技术有限公司 | Crossed waveguide |
| CN104166182A (en) * | 2014-08-25 | 2014-11-26 | 北京大学 | Waveguide mode converter |
| CN105842788B (en) * | 2016-05-30 | 2018-10-30 | 东南大学 | A kind of twin-core layer polarization rotator |
| CN106980154A (en) * | 2017-04-19 | 2017-07-25 | 浙江工业大学 | Oval right-angled intersection waveguide based on multimode interference principle |
| CN106980153B (en) * | 2017-04-19 | 2019-05-31 | 浙江工业大学 | A kind of production method of the oval right-angled intersection waveguide based on multimode interference principle |
| US10234627B1 (en) * | 2018-03-09 | 2019-03-19 | Mitsubishi Electric Research Laboratories, Inc. | Compact photonic devices |
| CN112649918B (en) * | 2021-01-22 | 2023-02-28 | 杭州芯耘光电科技有限公司 | Edge coupler |
| EP4350403A4 (en) * | 2021-05-24 | 2024-10-16 | Nanjing Lycore Tech Co Ltd | Photonic device, crossed waveguide, waveguide layer and manufacturing method therefor |
| CN114047578B (en) * | 2022-01-12 | 2022-04-01 | 季华实验室 | Waveguide layer and cross waveguide |
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| US6621792B1 (en) * | 1999-02-23 | 2003-09-16 | Avaya Technology Corp. | Computationally-efficient traffic shaper |
| CN2896310Y (en) * | 2006-05-24 | 2007-05-02 | 北京航空航天大学 | Multi-way light power distributer |
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