CN103513333B - A kind of silica-based nanowire mixing right-angled intersection device - Google Patents
A kind of silica-based nanowire mixing right-angled intersection device Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 12
- 239000000377 silicon dioxide Substances 0.000 title description 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 abstract description 41
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 238000010586 diagram Methods 0.000 description 15
- 238000009826 distribution Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 230000010354 integration Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000012792 core layer Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
本发明公开了一种硅基纳米线混合十字交叉器,该交叉器包括两个槽波导模式转换单元、两个条形波导模式转换单元、正弦型转换波导和十字交叉多模波导,两个槽波导模式转换单元和两个条形波导模式转换单元分别通过正弦型转换波导与十字交叉多模波导连接;每个槽波导模式转换单元与一个条形波导模式转换单元相对;每个槽波导模式转换单元包括用于光信号输入的槽波导和模式转换器,模式转换器连接在槽波导和正弦型转换波导之间;每个条形波导模式转换单元包括用于光信号输出的条形波导和单模波导,单模波导连接在条形波导和正弦型转换波导之间。该十字交叉器具有传输效率高、结构紧凑、损耗低、制造难度低、价格相对低廉等优点。
The invention discloses a silicon-based nanowire hybrid cross interposer, which comprises two slot waveguide mode conversion units, two strip waveguide mode conversion units, a sinusoidal conversion waveguide and a cross multimode waveguide, two slots The waveguide mode conversion unit and the two strip waveguide mode conversion units are respectively connected to the cross multimode waveguide through the sinusoidal conversion waveguide; each groove waveguide mode conversion unit is opposite to a strip waveguide mode conversion unit; each groove waveguide mode conversion The unit includes a slot waveguide for optical signal input and a mode converter, and the mode converter is connected between the slot waveguide and the sinusoidal conversion waveguide; each strip waveguide mode conversion unit includes a strip waveguide for optical signal output and a single mode waveguide, the single mode waveguide is connected between the strip waveguide and the sinusoidal type conversion waveguide. The crossover device has the advantages of high transmission efficiency, compact structure, low loss, low manufacturing difficulty, relatively low price and the like.
Description
技术领域technical field
本发明属于集成光子学技术领域,具体来说,涉及一种硅基纳米线混合十字交叉器。The invention belongs to the technical field of integrated photonics, and in particular relates to a silicon-based nanowire hybrid crosser.
背景技术Background technique
波导交叉器作为光子集成回路中的一类功能器件,在信号路由和提高器件的集成度方面具有重要的作用。直接的平面波导交叉,由于光场在波导交叉中心处明显的衍射作用,使得损耗和串扰大为增加。尤其是对于高折射率差的材料如绝缘体上硅,损耗和串扰非常严重,这极大地影响了波导交叉器的性能,制约了它在集成光器件领域的应用。因此,研制出满足应用需求的波导交叉器,具有非常重要的意思。近年来,研究学者针对低损耗、低串扰的波导交叉器,进行了大量的研究。例如采用模式扩展型的交叉方案,将波导交叉处的模场限制在一个较大的范围内以减小损耗和串扰,但是双刻蚀的制造工艺增加了器件的制造成本。此外,运用垂直制造工艺来制造波导交叉器可获得较好的器件性能,不过相对于平面工艺,这种制造方法明显要复杂的多,制造成本也相对较高。目前这些方案虽然能不同程度的降低波导交叉器的损耗和串扰,提高器件的性能,但制造难度都较高,不适合大规模的应用,而且交叉设计方法都只针对单一类型的条形结构波导,这极大地限制了波导交叉器的应用范围。As a kind of functional device in photonic integrated circuits, waveguide interleavers play an important role in signal routing and improving the integration of devices. Direct planar waveguide crossing, due to the obvious diffraction effect of the optical field at the center of the waveguide crossing, the loss and crosstalk are greatly increased. Especially for materials with high refractive index difference such as silicon-on-insulator, the loss and crosstalk are very serious, which greatly affects the performance of waveguide interleavers and restricts its application in the field of integrated optical devices. Therefore, it is very important to develop a waveguide crossover that meets the application requirements. In recent years, researchers have conducted a lot of research on waveguide interleavers with low loss and low crosstalk. For example, the mode-extended crossover scheme is used to limit the mode field at the waveguide crossover to a larger range to reduce loss and crosstalk, but the double-etching manufacturing process increases the manufacturing cost of the device. In addition, using the vertical manufacturing process to manufacture the waveguide interleavers can obtain better device performance, but compared with the planar process, this manufacturing method is obviously much more complicated and the manufacturing cost is relatively high. Although these solutions can reduce the loss and crosstalk of the waveguide crossover to varying degrees and improve the performance of the device, they are difficult to manufacture and are not suitable for large-scale applications, and the crossover design methods are only for a single type of strip structure waveguide. , which greatly limits the application range of waveguide interleavers.
目前槽波导作为一类结构新颖的波导,自从2004年被康奈尔大学的MichalLipson教授团队首先提出来后,很快受到了许多研究人员的关注。这种波导的模场分布与条形波导的模场分布明显不同,条形波导的模场主要分布于波导的芯层,而对于槽波导,根据电磁场的边值关系,在垂直于高折射率差分布的材料分界面上,电场分量将出现不连续性,由于槽的宽度远小于槽两侧条形波导的特征衰减长度,使得电场在低折射率的槽中大大增强,相应的模场也将集中于微槽区域。基于这种独特的场增强效应,许多光子器件相继被提出或者制造出来,例如:光调制器、偏振分束器、微环谐振器、定向耦合器、波分复用器、生物/化学传感器等。这些器件表现出与条形波导器件明显不同的传输特性,为了实现这两种不同类型波导器件的优势互补,单片集成将是一个很好的解决方案,其中高效波导交叉器的应用将有利于单片集成密度的提高。因此,设计出结构简单、传输效率高、制造方便、价格相对低廉的硅基纳米线混合十字交叉器将很有意义。At present, slot waveguide is a kind of waveguide with novel structure. Since it was first proposed by the team of Professor Michal Lipson of Cornell University in 2004, it has quickly attracted the attention of many researchers. The mode field distribution of this kind of waveguide is obviously different from that of the strip waveguide. The mode field of the strip waveguide is mainly distributed in the core layer of the waveguide, while for the slot waveguide, according to the boundary value relationship of the electromagnetic field, it is perpendicular to the high refractive index On the material interface with differential distribution, the electric field component will appear discontinuous. Since the width of the groove is much smaller than the characteristic attenuation length of the strip waveguide on both sides of the groove, the electric field is greatly enhanced in the groove with low refractive index, and the corresponding mode field is also will focus on the microgroove area. Based on this unique field enhancement effect, many photonic devices have been proposed or manufactured, such as: optical modulators, polarization beam splitters, microring resonators, directional couplers, wavelength division multiplexers, biological/chemical sensors, etc. . These devices exhibit significantly different transmission characteristics from strip waveguide devices. In order to realize the complementary advantages of these two different types of waveguide devices, monolithic integration will be a good solution, among which the application of high-efficiency waveguide interleavers will be beneficial Increased monolithic integration density. Therefore, it will be meaningful to design silicon-based nanowire hybrid crossers with simple structure, high transmission efficiency, convenient fabrication, and relatively low price.
发明内容Contents of the invention
技术问题:本发明所要解决的技术问题是:提供一种硅基纳米线混合十字交叉器,该十字交叉器具有传输效率高、结构紧凑、损耗低、制造难度低、价格相对低廉等优点。Technical problem: The technical problem to be solved by the present invention is to provide a silicon-based nanowire hybrid crisscrosser, which has the advantages of high transmission efficiency, compact structure, low loss, low manufacturing difficulty, and relatively low price.
技术方案:为解决上述技术问题,本发明采用如下的技术方案:Technical solution: In order to solve the above technical problems, the present invention adopts the following technical solutions:
一种硅基纳米线混合十字交叉器,该交叉器包括两个槽波导模式转换单元、两个条形波导模式转换单元、正弦型转换波导和十字交叉多模波导,两个槽波导模式转换单元和两个条形波导模式转换单元分别通过正弦型转换波导与十字交叉多模波导连接;每个槽波导模式转换单元与一个条形波导模式转换单元相对;每个槽波导模式转换单元包括用于光信号输入的槽波导和模式转换器,模式转换器连接在槽波导和正弦型转换波导之间;每个条形波导模式转换单元包括用于光信号输出的条形波导和单模波导,单模波导连接在条形波导和正弦型转换波导之间。A silicon-based nanowire hybrid cross crossover device, the crossover device includes two groove waveguide mode conversion units, two strip waveguide mode conversion units, a sinusoidal conversion waveguide and a cross multimode waveguide, two groove waveguide mode conversion units and two strip waveguide mode conversion units are respectively connected to the cross multimode waveguide through a sinusoidal conversion waveguide; each slot waveguide mode conversion unit is opposite to a strip waveguide mode conversion unit; each slot waveguide mode conversion unit includes a A slot waveguide and a mode converter for optical signal input, the mode converter is connected between the slot waveguide and the sinusoidal conversion waveguide; each strip waveguide mode conversion unit includes a strip waveguide and a single-mode waveguide for optical signal output, and a single The mode waveguide is connected between the strip waveguide and the sinusoidal type conversion waveguide.
有益效果:与现有技术相比,本发明的技术方案具有以下有益效果:Beneficial effects: Compared with the prior art, the technical solution of the present invention has the following beneficial effects:
1、传输效率高、损耗低。由于在波导交叉处引入了十字交叉多模波导结构,相对于现有的直接波导交叉而言,该结构可使得入射光场在波导交叉中心处加以汇聚以减小多模波导中入射光场的宽度,相应的降低由于波导交叉所带来的串扰和衍射损耗,传输效率也将明显提高,此外在输入波导、输出波导和十字交叉多模波导之间加入了相应的模式转换结构用于高效转换不同波导的模式,可进一步提高传输和耦合效率。1. High transmission efficiency and low loss. Compared with the existing direct waveguide intersection, the crossover multimode waveguide structure is introduced at the waveguide intersection, the structure can make the incident light field converge at the center of the waveguide intersection to reduce the intensity of the incident light field in the multimode waveguide. Width, the corresponding reduction of crosstalk and diffraction loss due to waveguide crossing, the transmission efficiency will also be significantly improved, in addition, a corresponding mode conversion structure is added between the input waveguide, output waveguide and cross multimode waveguide for efficient conversion The modes of different waveguides can further improve the transmission and coupling efficiency.
2、制造难度低、可靠性高。本发明中所采用到的波导结构,如十字交叉多模波导、正弦型转换波导、对数型的模式转换器、单模波导等的特征尺寸都比较大(都在微米或亚微米量级),这将放宽对实际光子器件制造设备特征尺寸的要求,降低制造难度,相应的器件可靠性也可以得到保证。2. Low manufacturing difficulty and high reliability. The waveguide structures adopted in the present invention, such as cross multimode waveguides, sinusoidal conversion waveguides, logarithmic mode converters, single-mode waveguides, etc., have relatively large feature sizes (all on the order of microns or submicrons) , which will relax the requirements on the feature size of the actual photonic device manufacturing equipment, reduce the difficulty of manufacturing, and the corresponding device reliability can also be guaranteed.
3、可以实现不同波导模式的高效转换。由于输入波导模式和输出波导模式不同,在本发明中加入了两种模式转换单元,分别是槽波导模式转换单元和条形波导模式转换单元,以及正弦型转换波导结构用以减小由于不同波导直接耦合所带来的反射损耗和端面耦合损耗,提高模式转换效率。3. Efficient conversion of different waveguide modes can be realized. Because the input waveguide mode is different from the output waveguide mode, two kinds of mode conversion units are added in the present invention, which are respectively slot waveguide mode conversion unit and strip waveguide mode conversion unit, and the sinusoidal conversion waveguide structure is used to reduce the The reflection loss and end-face coupling loss caused by direct coupling improve the mode conversion efficiency.
4、结构紧凑、制作方便、成本低廉。本发明由于采用了高折射率差的绝缘体上硅材料,使得器件整体结构具有较高的紧凑性。硅基纳米线波导结构材料便宜,并且与成熟的CMOS加工工艺兼容,制作方便,能够实现硅基单片集成,在集成光子学领域有着巨大的发展潜力。4. Compact structure, convenient manufacture and low cost. Because the present invention adopts the silicon-on-insulator material with high refractive index difference, the overall structure of the device has higher compactness. Silicon-based nanowire waveguide structure materials are cheap, compatible with mature CMOS processing technology, easy to manufacture, capable of silicon-based monolithic integration, and have great development potential in the field of integrated photonics.
附图说明Description of drawings
图1为本发明的结构示意图。Fig. 1 is a structural schematic diagram of the present invention.
图2为本发明中条形波导结构准横电模的主分量模场分布图。Fig. 2 is a principal component mode field distribution diagram of the quasi-transverse electric mode of the strip waveguide structure in the present invention.
图3为本发明中槽波导结构准横电模的主分量模场分布图。Fig. 3 is a distribution diagram of the principal component mode field of the quasi-transverse electric mode of the slot waveguide structure in the present invention.
图4为本发明中模式转换器的结构示意图。FIG. 4 is a schematic structural diagram of a mode converter in the present invention.
图5为本发明中模式转换器传输效率与其第一长度的变化关系。FIG. 5 shows the relationship between the transmission efficiency of the mode converter and its first length in the present invention.
图6为本发明中模式转换器传输效率与其第二长度的变化关系。FIG. 6 shows the variation relationship between the transmission efficiency of the mode converter and its second length in the present invention.
图7为本发明中模式转换器传输效率与工作波长的变化关系。Fig. 7 shows the relationship between the transmission efficiency of the mode converter and the working wavelength in the present invention.
图8为本发明中模式转换器的传输模场分布图。Fig. 8 is a distribution diagram of the transmission mode field of the mode converter in the present invention.
图9为本发明的传输模场分布图,其中,横坐标表示器件横向的尺寸,单位:微米(μm);纵坐标表示器件传输方向的尺寸,单位:微米(μm)。Fig. 9 is a transmission mode field distribution diagram of the present invention, wherein the abscissa represents the lateral dimension of the device, unit: micron (μm); the ordinate represents the size of the device in the transmission direction, unit: micron (μm).
图10给出了第一种条形波导结构的传输模场分布图,其中,横坐标表示器件横向的尺寸,单位:微米(μm);纵坐标表示器件传输方向的尺寸,单位:微米(μm)。Figure 10 shows the transmission mode field distribution diagram of the first strip waveguide structure, where the abscissa indicates the lateral dimension of the device, unit: micron (μm); the ordinate indicates the size of the device transmission direction, unit: micron (μm ).
图11给出了第二种条形波导结构的传输模场分布图,其中,横坐标表示器件横向的尺寸,单位:微米(μm);纵坐标表示器件传输方向的尺寸,单位:微米(μm)。Figure 11 shows the transmission mode field distribution diagram of the second strip waveguide structure, where the abscissa indicates the lateral dimension of the device, unit: micron (μm); the ordinate indicates the size of the device transmission direction, unit: micron (μm ).
图中有:槽波导1、条形波导2、十字交叉多模波导3、单模波导4、模式转换器5、正弦型转换波导6。In the figure, there are: slot waveguide 1, strip waveguide 2, cross multimode waveguide 3, single-mode waveguide 4, mode converter 5, and sinusoidal conversion waveguide 6.
具体实施方式detailed description
下面结合附图,对本发明的原理和特征进行描述,所举实例只用于解释本发明,并非用于限定本发明的范围。The principles and features of the present invention will be described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention and are not intended to limit the scope of the present invention.
如图1所示,本发明的一种硅基纳米线混合十字交叉器,包括两个槽波导模式转换单元、两个条形波导模式转换单元、正弦型转换波导6和十字交叉多模波导3。两个槽波导模式转换单元和两个条形波导模式转换单元分别通过正弦型转换波导6与十字交叉多模波导3连接。每个槽波导模式转换单元与一个条形波导模式转换单元相对。每个槽波导模式转换单元包括用于光信号输入的槽波导1和模式转换器5,模式转换器5连接在槽波导1和正弦型转换波导6之间。每个条形波导模式转换单元包括用于光信号输出的条形波导2和单模波导4。单模波导4连接在条形波导2和正弦型转换波导6之间。As shown in Figure 1, a silicon-based nanowire hybrid crossover device of the present invention includes two groove waveguide mode conversion units, two strip waveguide mode conversion units, a sinusoidal conversion waveguide 6 and a cross multimode waveguide 3 . The two slot waveguide mode conversion units and the two strip waveguide mode conversion units are respectively connected to the cross multimode waveguide 3 through the sinusoidal conversion waveguide 6 . Each groove waveguide mode conversion unit is opposed to one strip waveguide mode conversion unit. Each slot waveguide mode conversion unit includes a slot waveguide 1 for optical signal input and a mode converter 5 connected between the slot waveguide 1 and the sinusoidal conversion waveguide 6 . Each strip waveguide mode conversion unit includes a strip waveguide 2 and a single-mode waveguide 4 for optical signal output. The single-mode waveguide 4 is connected between the strip waveguide 2 and the sinusoidal conversion waveguide 6 .
光信号在上述结构的混合十字交叉器中的传输特征如下:入射光信号从槽波导1输入,经过模式转换器5绝热地转变为条形波导的模式,进入正弦型转换波导6及十字交叉多模波导3并激励出多个模式产生多模干涉现象。基于多模干涉的自镜像效应,入射信号的光场将在自镜像长度处重新汇聚,选择十字交叉多模波导3的长度为自镜像长度的两倍,使得光场恰好在十字交叉多模波导3的交叉中心处汇聚以减小交叉所带来的串扰和衍射损耗。当光场从十字交叉多模波导3输出时,进入正弦型转换波导6及单模波导4,并最终从直通条形波导2端输出。本发明的交叉器,从输入波导进入的光信号通过混合十字交叉器后能够高效的从输出波导输出,产生较低的插入损耗、串扰和衍射损耗,从而实现不同波导信号的混合交叉传输。本发明具有结构紧凑、损耗低、制造难度低、价格相对低廉等优点。The transmission characteristics of the optical signal in the hybrid crossover device with the above structure are as follows: the incident optical signal is input from the slot waveguide 1, is adiabatically transformed into the mode of the strip waveguide through the mode converter 5, and then enters the sinusoidal conversion waveguide 6 and the crossover waveguide. The mode waveguide 3 excites multiple modes to generate multi-mode interference phenomenon. Based on the self-image effect of multimode interference, the light field of the incident signal will converge again at the length of the self-image, and the length of the crossed multimode waveguide 3 is selected to be twice the length of the self-image, so that the light field is exactly in the crossed multimode waveguide 3 converge at the center of the intersection to reduce crosstalk and diffraction loss caused by the intersection. When the light field is output from the cross multi-mode waveguide 3, it enters the sinusoidal conversion waveguide 6 and the single-mode waveguide 4, and finally outputs from the end of the straight-through strip waveguide 2. In the interleaver of the present invention, the optical signal entering from the input waveguide can be efficiently output from the output waveguide after passing through the hybrid cross interleaver, resulting in lower insertion loss, crosstalk and diffraction loss, thereby realizing hybrid cross transmission of different waveguide signals. The invention has the advantages of compact structure, low loss, low manufacturing difficulty, relatively low price and the like.
上述结构的混合十字交叉器中,每个槽波导模式转换单元与一个条形波导模式转换单元相对。也就是说,两个槽波导模式转换单元相邻设置,两个条形波导模式转换单元相邻设置,每个槽波导模式转换单元与一个条形波导模式转换单元相对。该种结构设置,主要用于解决不同波导输入输出的交叉传输问题,区别于目前输入输出波导相同的情况。在实际的硅基单片集成设计过程中往往会遇到不同波导输入输出的情形,因此本发明主要用于解决不同输入输出波导的混合交叉传输问题。In the hybrid crossover device with the above structure, each slot waveguide mode conversion unit is opposite to a strip waveguide mode conversion unit. That is to say, two groove waveguide mode conversion units are arranged adjacently, two strip waveguide mode conversion units are adjacently arranged, and each groove waveguide mode conversion unit is opposite to one strip waveguide mode conversion unit. This structural setting is mainly used to solve the problem of cross transmission between input and output of different waveguides, which is different from the current situation where the input and output waveguides are the same. In the actual silicon-based monolithic integration design process, different waveguide input and output situations are often encountered, so the present invention is mainly used to solve the mixed cross transmission problem of different input and output waveguides.
上述器件的制作材料均采用绝缘体上硅材料,即槽波导1、条形波导2、模式转换器5、正弦型转换波导6、十字交叉多模波导3、单模波导4的材料均为硅,衬底和包层的材料为二氧化硅。槽波导1的微槽区域填充低折射率材料,例如填充二氧化硅、硅纳米晶、或者聚合物等材料。这些材料的折射率都比硅的折射率小,差值在2左右。The above-mentioned devices are all made of silicon-on-insulator material, that is, the materials of the slot waveguide 1, the strip waveguide 2, the mode converter 5, the sinusoidal conversion waveguide 6, the cross multimode waveguide 3, and the single-mode waveguide 4 are all silicon. The material of substrate and cladding is silicon dioxide. The micro-groove region of the groove waveguide 1 is filled with low-refractive-index materials, such as silicon dioxide, silicon nanocrystals, or polymers. The refractive index of these materials is smaller than that of silicon, and the difference is about 2.
进一步,所述的两个槽波导模式转换单元和两个条形波导模式转换单元的长度均相等。四个单元的长度相同,可降低串扰、提高交叉传输效率及方便实际器件的制造。Further, the lengths of the two slot waveguide mode conversion units and the two strip waveguide mode conversion units are equal. The four units have the same length, which can reduce crosstalk, improve cross transmission efficiency and facilitate the manufacture of actual devices.
进一步,所述的模式转换器5包括与槽波导1相连的第一波导区域及与正弦型转换波导6相连的第二波导区域,第一波导区域和第二波导区域根据波导对应关系直接相连。在第一波导区域中,连接槽波导1一侧的波导宽度采用对数型曲线设置,另一侧的波导及对应微槽的宽度保持不变。在第二波导区域中,连接第一波导区域的一侧波导宽度保持不变,另一侧波导宽度采用对数型曲线设置,微槽的宽度采用反方向的对数关系变化。Further, the mode converter 5 includes a first waveguide region connected to the slot waveguide 1 and a second waveguide region connected to the sinusoidal conversion waveguide 6, and the first waveguide region and the second waveguide region are directly connected according to the waveguide correspondence. In the first waveguide region, the waveguide width on one side of the connecting slot waveguide 1 is set using a logarithmic curve, and the width of the waveguide and corresponding microgrooves on the other side remains unchanged. In the second waveguide region, the width of the waveguide on one side connected to the first waveguide region remains unchanged, the width of the waveguide on the other side is set by a logarithmic curve, and the width of the microgroove is changed by a logarithmic relationship in the opposite direction.
图4为模式转换器的结构示意图。模式转换器5中的波导宽度采用对数型曲线结构设计,以使得槽波导和条形波导之间的模式接近于绝热转换,从而实现高效的模式转换。从槽波导到条形波导进行转换的模式转换器的长度依次定义为第一长度l1和第二长度l2,第一长度l1是模式转换器5中与槽波导相连的第一波导区域的长度;第二长度是模式转换器5中与正弦型转换波导6相连的第二波导区域的长度。FIG. 4 is a schematic structural diagram of a mode converter. The waveguide width in the mode converter 5 is designed with a logarithmic curve structure, so that the mode between the slot waveguide and the strip waveguide is close to adiabatic conversion, thereby realizing efficient mode conversion. The length of the mode converter converting from the slot waveguide to the strip waveguide is defined as the first length l 1 and the second length l 2 in turn, the first length l 1 is the first waveguide region connected to the slot waveguide in the mode converter 5 The second length is the length of the second waveguide region connected to the sinusoidal conversion waveguide 6 in the mode converter 5 .
图5为模式转换器传输效率与其第一长度的变化关系,其中传输效率定义为模式转换器输出端的功率与其输入端功率的比值。开始时随着模式转换器第一长度的增加传输效率增加较快,但在第一长度大于3μm时传输效率逐渐趋于饱和。结合传输效率的变化关系,优选设置第一长度为4μm。图6为模式转换器传输效率与其第二长度的变化关系,随着模式转换器第二长度的增加传输效率出现了两个峰值,分别位于2.4μm和3.6μm处,考虑到器件结构的紧凑性,选择第二长度为2.4μm。图7为模式转换器传输效率与工作波长的变化关系,在1.45μm到1.65μm的波长范围内模式转换器的传输效率都高于98%,在1.55μm的通信波长处传输效率更是接近99%,因此该种模式转换器在混合十字交叉器中的运用将有利于器件整体性能的提升。图8为模式转换器中的传输模场分布图,能够明显看到槽波导和条形波导的光信号模式通过该转换器实现了高效的传输及转换。FIG. 5 shows the relationship between the transmission efficiency of the mode converter and its first length, wherein the transmission efficiency is defined as the ratio of the power at the output end of the mode converter to the power at the input end. At the beginning, the transmission efficiency increases rapidly with the increase of the first length of the mode converter, but the transmission efficiency gradually tends to saturation when the first length is greater than 3 μm. In consideration of the variation relationship of the transmission efficiency, it is preferable to set the first length to be 4 μm. Figure 6 shows the relationship between the transmission efficiency of the mode converter and its second length. With the increase of the second length of the mode converter, the transmission efficiency has two peaks, which are located at 2.4 μm and 3.6 μm respectively. Considering the compactness of the device structure , choose the second length to be 2.4 μm. Figure 7 shows the relationship between the transmission efficiency of the mode converter and the operating wavelength. The transmission efficiency of the mode converter is higher than 98% in the wavelength range of 1.45 μm to 1.65 μm, and the transmission efficiency is close to 99% at the communication wavelength of 1.55 μm. %, so the application of this kind of mode converter in the hybrid crossover device will be beneficial to the improvement of the overall performance of the device. Figure 8 is a distribution diagram of the transmission mode field in the mode converter. It can be clearly seen that the optical signal modes of the slot waveguide and the strip waveguide achieve efficient transmission and conversion through the converter.
进一步,所述的正弦型转换波导6采用宽度按照正弦规律变化的波导结构,用于实现单模波导4和十字交叉多模波导3之间的模式转换。模式转换器5采用对数型曲线结构设计,用于实现槽波导1和条形波导2之间高效的模式转换。Further, the sinusoidal conversion waveguide 6 adopts a waveguide structure whose width changes according to the sinusoidal law, and is used to realize the mode conversion between the single-mode waveguide 4 and the cross multi-mode waveguide 3 . The mode converter 5 adopts a logarithmic curve structure design for realizing efficient mode conversion between the slot waveguide 1 and the strip waveguide 2 .
本发明公开了一种硅基纳米线混合十字交叉器,旨在提供一种结构紧凑、性能优越、制造工艺简单、易于集成的混合波导交叉设计,可用于光通信和集成光子学等领域。光从槽波导1输入,并在同方向的条形波导2输出,在槽波导1输出端引入模式转换器5,用以实现槽波导1和条形波导2之间模式的高效转换,及用于实现单模波导4和十字交叉多模波导3之间模式转换的正弦型转换波导6。同时在波导交叉处加入了十字交叉多模波导3,使得器件的整体结构变得简单紧凑,相应的损耗变得很小。The invention discloses a silicon-based nanowire hybrid cross, aiming to provide a hybrid waveguide cross design with compact structure, superior performance, simple manufacturing process and easy integration, which can be used in the fields of optical communication, integrated photonics and the like. The light is input from the slot waveguide 1 and output from the strip waveguide 2 in the same direction, and the mode converter 5 is introduced at the output end of the slot waveguide 1 to realize the efficient mode conversion between the slot waveguide 1 and the strip waveguide 2, and use The sinusoidal conversion waveguide 6 is used to realize the mode conversion between the single-mode waveguide 4 and the cross multi-mode waveguide 3 . At the same time, a cross multimode waveguide 3 is added at the waveguide intersection, so that the overall structure of the device becomes simple and compact, and the corresponding loss becomes very small.
条形波导的芯层为硅,包层采用二氧化硅材料,槽波导的包层为二氧化硅,槽区域填充低折射率的材料(如:二氧化硅等),槽区域两侧的纳米线波导均为硅材料。The core layer of the strip waveguide is silicon, the cladding is made of silica material, the cladding of the slot waveguide is silicon dioxide, and the slot area is filled with low refractive index materials (such as: silicon dioxide, etc.). The linear waveguides are all silicon materials.
图2为条形波导准横电模的主分量模场分布图,条形波导的模场主要分布于波导芯层。图3为槽波导结构准横电模的主分量模场分布图,槽波导的模场则在微槽区域出现了明显的增强。通过使用模式转换器5可以实现两者之间模式的相互转换。图9示出了本发明的传输模场分布图,输入的光场能够高效的通过十字交叉器,传输到相应的输出端口。作为对比,图10给出了第一种条形波导结构的传输模场分布图。该条形波导结构采用条形波导直接十字交叉的结构形式。从图10中明显看到由于波导交叉使得入射光场在交叉处损耗严重。图11给出了第二种条形波导结构的传输模场分布图。该条形波导结构采用在条形波导交叉中心处加入了多模波导,四周的条形波导采用锥形过渡结构与多模波导进行连接的结构形式。与第一种条形波导结构相比较,第二种条形波导结构可以较好的改善波导交叉的传输特性,但位于中心处的多模波导与周围条形波导的连接方式还有待改进,例如,在波导连接端,条形波导与多模波导的宽度不匹配,由此会带来部分的耦合损耗和反射损耗;同时输入输出波导的种类也不应该局限于单一条形波导结构。对比图9和图11可以看到,图11中所示器件的横向端口有部分能量输出,对应于串扰,同时在传输方向上也有部分能量在交叉中心发生了衍射并沿着传输方向散射出去,对应于衍射损耗。而本发明的结构,从图9中可见明显减小了这两种主要损耗,提高了传输效率。因此,本发明的技术方案及所获得的光信号传输特性明显优于现有的条形波导交叉器。Figure 2 is the principal component mode field distribution diagram of the quasi-transverse electric mode of the strip waveguide. The mode field of the strip waveguide is mainly distributed in the core layer of the waveguide. Figure 3 shows the principal component mode field distribution diagram of the quasi-transverse electric mode of the slot waveguide structure, and the mode field of the slot waveguide is significantly enhanced in the micro-groove region. The mutual conversion between the two modes can be realized by using the mode converter 5 . FIG. 9 shows the transmission mode field distribution diagram of the present invention, and the input light field can efficiently pass through the crossbar and be transmitted to the corresponding output port. For comparison, Fig. 10 shows the transmission mode field distribution diagram of the first strip waveguide structure. The strip waveguide structure adopts a structure form in which the strip waveguides directly cross each other. It is obvious from Fig. 10 that the loss of the incident light field at the intersection is serious due to the intersection of waveguides. Fig. 11 shows the transmission mode field distribution diagram of the second strip waveguide structure. The strip waveguide structure adopts a structural form in which a multimode waveguide is added at the intersection center of the strip waveguide, and the surrounding strip waveguides adopt a tapered transition structure to connect with the multimode waveguide. Compared with the first strip waveguide structure, the second strip waveguide structure can better improve the transmission characteristics of the waveguide intersection, but the connection between the multimode waveguide at the center and the surrounding strip waveguides needs to be improved, for example , at the waveguide connection end, the strip waveguide does not match the width of the multimode waveguide, which will cause some coupling loss and reflection loss; at the same time, the types of input and output waveguides should not be limited to a single strip waveguide structure. Comparing Figure 9 and Figure 11, it can be seen that the lateral port of the device shown in Figure 11 has part of the energy output, corresponding to crosstalk, and at the same time, part of the energy in the transmission direction is diffracted at the cross center and scattered along the transmission direction. Corresponds to the diffraction loss. However, the structure of the present invention can be seen from Fig. 9 to significantly reduce the two main losses and improve the transmission efficiency. Therefore, the technical solution and the obtained optical signal transmission characteristics of the present invention are obviously better than the existing strip waveguide interleavers.
本说明书实施例所述的内容仅仅是对发明构思的实现形式的列举,本发明的保护范围不应当被视为仅限于实施例所陈述的具体形式,本发明的保护范围也及于本领域技术人员根据发明构思所能够想到的等同技术手段。The content described in the embodiments of this specification is only an enumeration of the implementation forms of the inventive concept. The protection scope of the present invention should not be regarded as limited to the specific forms stated in the embodiments. Equivalent technical means that a person can think of based on the inventive concept.
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