CN115657341B - Sub-band grating structure GST phase change material micro switch unit based on silicon nitride platform - Google Patents
Sub-band grating structure GST phase change material micro switch unit based on silicon nitride platform Download PDFInfo
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- CN115657341B CN115657341B CN202211576771.6A CN202211576771A CN115657341B CN 115657341 B CN115657341 B CN 115657341B CN 202211576771 A CN202211576771 A CN 202211576771A CN 115657341 B CN115657341 B CN 115657341B
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Abstract
The invention discloses a silicon nitride platform-based sub-band grating structure GST phase change material micro switch unit, which comprises a basal layer, an oxygen burying layer and a planar straight waveguide layer from bottom to top, wherein a waveguide groove with a groove-shaped structure is formed on the planar straight waveguide layer, the GST phase change material forms a grating structure and is inlaid on the planar straight waveguide, the transmittance of light is modulated by adjusting the state of the GST phase change material, and the GST phase change material micro switch unit is used for controlling the switch unit, and deep grooves are etched in the middle of the conventional straight planar waveguide to form a slot waveguide structure; etching or corrosion in the waveguide structure to form a group of strip grating structures, and embedding GST phase change materials into the strip grating structures to form phase change material optical switch units of the grating structures; the optical switch unit structure can effectively improve the sensitivity of the structure, reduce the length and the loss, and the state is maintained without the need of externally applied voltage, thereby having the characteristic of non-volatile.
Description
Technical Field
The invention relates to the field of silicon-based optical switches, in particular to a silicon nitride platform-based GST phase change material micro switch unit with a sub-band grating structure.
Background
The silicon-based optical switch unit is a photon integrated core device, and the silicon photon switch has high switch performances such as high modulation, picosecond switch time and the like, and is a great demand for realizing a silicon-based photon integrated circuit. The current MZI modulator is based on the thermo-optic effect and the electro-optic effect, and the electro-optic thermo-optic coefficient is lower, so that the size of a phase shift arm is larger, and the whole size of the device can reach millimeter level.
Silicon photonics platform is an important platform for inter-chip and intra-chip communication, which can utilize silicon (silicon) microelectronics industry processes used in mature CMOS processes due to the important availability of low cost and high yield manufacturing. Silicon oxide platforms are the most common platform, but they are more lossy and less stable; silicon nitride platforms have the advantages of low waveguide loss and high thermal stability, but are difficult to make active devices.
GST(Ge 2 Sb 2 Te 5 ) Phase change materials have unique advantages such as optical modulation characteristics and resistivity differences, being very stable in both states, crystalline and amorphous, and not requiring additional energy to maintain; the ns-level rapid conversion is realized between the crystalline state and the amorphous state; the stable and repeated phase change for many times can be realized; the transition in the crystalline state and the amorphous state can bring about great refractive index change to realizeMiniaturization of the modulator unit; the advantages of these GST materials are widely used in integrated circuit opto-electronic switching; the prior related reports are based on phase change material modulators, which have large performance difference, high loss, large structure and poor extinction ratio.
Disclosure of Invention
The invention aims to provide a silicon nitride platform-based sub-band grating structure GST phase change material micro switch unit so as to solve the technical problems in the background technology.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a silicon nitride platform based sub-band grating structure GST phase change material micro-switch unit comprising: the GST phase change material is embedded on the planar straight waveguide, and the transmittance of light is modulated by adjusting the state of the GST phase change material to control the switch unit.
Preferably, the substrate layer is a silicon substrate.
Preferably, the oxygen-buried layer is a silicon dioxide layer.
Preferably, the planar straight waveguide layer is a silicon nitride waveguide.
Preferably, the thickness or depth of the planar straight waveguide layer, the waveguide groove and the GST phase change material are the same.
Preferably, the width of the waveguide slot is 30-150nm.
Preferably, the GST phase-change material is divided into five blocks, wherein four blocks of the GST phase-change material are inlaid at two sides of the waveguide slot, and the remaining block of the GST phase-change material is located at the four blocks of the GST phase-change material and penetrates through the waveguide slot.
Preferably, the GST phase change materials are each in the form of strips and perpendicular to the waveguide slot.
Preferably, the GST phase change material is symmetrically distributed about the waveguide slot.
The invention has the beneficial effects that:
etching a deep groove in the middle of a conventional straight plane waveguide to form a slot waveguide structure; etching or corrosion in the waveguide structure to form a group of strip grating structures, and embedding GST phase change materials into the strip grating structures to form phase change material optical switch units of the grating structures; the optical switch unit structure can effectively improve the sensitivity of the structure, reduce the length and the loss, and the state is maintained without the need of externally applied voltage, thereby having the characteristic of non-volatile.
Drawings
FIG. 1 is a schematic three-dimensional structure of an embodiment of the present invention;
FIG. 2 is a schematic top plan view of an embodiment of the present invention;
FIG. 3 is a schematic view of a plane perpendicular to the light transmission direction according to an embodiment of the present invention;
FIG. 4 is an "off" state diagram of an embodiment of the present invention;
FIG. 5 is an "on" schematic diagram of an embodiment of the present invention;
FIG. 6 is a schematic diagram of a simulation result of the switch state performance according to an embodiment of the present invention;
in the figure: 1. a base layer; 2. an oxygen burying layer; 3. a planar straight waveguide layer; 4. GST phase change material; 5. a waveguide slot.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-6, an embodiment of the present invention provides a silicon nitride platform-based sub-band grating structure GST phase change material micro switch unit, which includes a substrate layer 1, an oxygen burying layer 2 and a planar straight waveguide layer 3 from bottom to top, wherein the substrate layer 1 is a silicon substrate, the oxygen burying layer 2 uses a silicon dioxide material as an insulating layer, the planar straight waveguide layer 3 uses a silicon nitride waveguide, a deep groove is etched in the middle of the planar straight waveguide layer 3 as a waveguide groove 5 to form a slot groove type waveguide structure, and grating-like structures are etched at two sides of the waveguide groove 5, and GST phase change materials 4 are filled in the corresponding grating-like structures, so that the GST phase change materials 4 are embedded in the planar straight waveguide layer 3 and serve as modulation materials of an optical switch.
The GST phase-change material 4 is divided into five strip-shaped structures and symmetrically distributed about the waveguide slot 5, wherein four of the four strip-shaped structures are symmetrically distributed and embedded on two sides of the waveguide slot 5, the remaining one GST phase-change material 4 is positioned between the four GST phase-change materials and penetrates through the waveguide slot 5, and the strip-shaped structures of the GST phase-change material 4 are perpendicular to the waveguide slot 5.
Further illustrated by simulation experiments, the experimental parameters include, in addition to the above structures in the examples: the structure of the planar straight waveguide layer 3 is formed by one-time etching, the planar straight waveguide 3 is designed into a slot-type waveguide structure, the thickness of the buried oxide layer 2 is 3um, the thickness dimension of the planar straight waveguide layer 3 is 200nm, the depth of the waveguide slot 5 is 200nm, the width is 150nm, referring to fig. 1-2, the length, width and height dimensions of the 4 GST phase change materials 4 inlaid on two sides of the waveguide slot 5 are the same as each other: 140 The intermediate GST phase change material 4 has a structural dimension of 140 nm x 450nm x 200nm, the relevant parameter dimension of which is an estimate in the example, and which is also the optimal parameter in the example.
The optical switch of the embodiment of the invention works in the O band, the refractive indexes corresponding to the crystalline state and the amorphous state of the GST phase change material 4 in the working band are 2.7 and 5+0.4 respectively, and the rapid switching between the crystalline state and the amorphous state of the GST phase change material 4 is carried out by externally connecting a control signal, so that the distribution of a local optical field is controlled, and the switching of the optical switch state is realized. The external control signal can be a voltage signal, an optical pulse signal, a thermal signal and the like.
Referring to fig. 4, which is a schematic diagram of an "on" state of an embodiment of the present invention, the advantage of the GST phase change material of the embodiment of the present invention combined with a silicon nitride platform can be seen from the left side of the figure, which has the characteristics of wide light transmission spectrum and low transmission loss.
Referring to FIG. 5, which is a schematic illustration of an "off" state of an embodiment of the present invention, the advantage of the GST phase change material of the embodiment of the present invention combined with a silicon nitride platform, which has the characteristic of high extinction ratio, can be seen from the left side of the figure.
Referring to fig. 6, specific experimental data results show that the optical loss in the "on" state is less than 1dB, and the extinction ratio in the "off" state is better than 17dB in the embodiment of the invention.
The slot waveguide mode designed by the embodiment of the invention can play a role in increasing the intensity of an optical field when light passes through a sol structure in the transmission process; according to the structure of the grating GST phase change material, ns-level rapid conversion can be realized between crystalline and amorphous GST, so that the sensitivity of the structure is effectively improved, the rapid switching of the optical switch state is realized, meanwhile, the grating GST phase change material is obtained through a simulation experiment in a figure 6, and the grating GST phase change material has the advantages of low loss in an on state and high extinction ratio in an off state.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, or alternatives falling within the spirit and principles of the invention.
Claims (8)
1. The utility model provides a sub-band grating structure GST phase change material micro switch unit based on silicon nitride platform which characterized in that: the switch unit comprises a basal layer, an oxygen burying layer and a planar straight waveguide layer from bottom to top, a waveguide groove with a groove-shaped structure is formed in the planar straight waveguide layer, the GST phase change material is embedded on the planar straight waveguide, the state of the GST phase change material is adjusted to modulate the light transmittance and used for controlling the switch unit, the GST phase change material is divided into five blocks, four blocks of GST phase change materials are embedded on two sides of the waveguide groove, and the rest of GST phase change materials are positioned in the middle of the four GST phase change materials and penetrate through the waveguide groove.
2. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the substrate layer is a silicon substrate.
3. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the oxygen-buried layer is a silicon dioxide layer.
4. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the planar straight waveguide layer is a silicon nitride waveguide.
5. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the thickness or depth of the planar straight waveguide layer, the waveguide groove and the GST phase change material are the same.
6. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the width of the wave guide groove is 30-150nm.
7. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the GST phase change materials are all strip-shaped and perpendicular to the waveguide groove.
8. The silicon nitride platform-based sub-band grating structure GST phase change material micro-switch unit of claim 1, wherein: the GST phase change material is symmetrically distributed about the waveguide slot.
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| CN112649999A (en) * | 2020-12-28 | 2021-04-13 | 上海交大平湖智能光电研究院 | Switch type optical waveguide device based on phase change material and manufacturing method |
| CN113724756B (en) * | 2021-08-27 | 2023-10-13 | 北京工业大学 | Nonvolatile decimal photoelectric memory based on waveguide grating structure |
| CN113866878A (en) * | 2021-09-14 | 2021-12-31 | 上海交大平湖智能光电研究院 | Multi-parameter tunable filter based on phase-change Bragg grating and regulating and controlling method thereof |
| CN115097569B (en) * | 2022-07-11 | 2024-04-12 | 深圳大学 | Micro-ring-sub-wavelength grating tunable filter based on silicon nitride |
| CN115327703B (en) * | 2022-07-26 | 2024-03-19 | 华中科技大学 | Nonvolatile multistage adjustable photonic synapse device based on phase change material |
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