CN116009284A - Micro optical switch unit based on double-hole GST phase change material and design method - Google Patents
Micro optical switch unit based on double-hole GST phase change material and design method Download PDFInfo
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- CN116009284A CN116009284A CN202211638784.1A CN202211638784A CN116009284A CN 116009284 A CN116009284 A CN 116009284A CN 202211638784 A CN202211638784 A CN 202211638784A CN 116009284 A CN116009284 A CN 116009284A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 73
- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 14
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- 239000010410 layer Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 7
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Abstract
The invention discloses a micro optical switch unit based on a double-hole GST phase change material and a design method thereof, the micro optical switch unit comprises a substrate layer, wherein the upper surface of the substrate layer is provided with a guided wave layer and a phase change material structure, the guided wave layer is a straight slab waveguide, the phase change material structure is a double-hole structure and is positioned in the middle of the straight slab waveguide structure, a cylindrical GST phase change material is inlaid in the double-hole structure, and the outer surfaces of the substrate layer, the guided wave layer and the GST phase change material are wrapped with a protective layer. Through designing the mixed integration of the straight slab slot waveguide and the GST phase change material, the GST phase change material is inlaid in the straight slab slot waveguide, and the functions of dual-channel selection input, dual-channel gating and mode switching can be completed for the transverse electric fundamental mode through the phase state of the GST phase change material, so that the dual-channel switching device has the characteristics of high extinction ratio, small size and high switching speed.
Description
Technical Field
The invention relates to the technical field of silicon-based optical chips, in particular to a micro optical switch unit based on a double-hole GST phase change material and a design method thereof.
Background
Electro-optic modulators are core electro-optic conversion devices in the field of communications and have been an international research hotspot for many years. Traditional LiNbO material 3 The modulator is most mature in development, but generally has high half-wave voltage, large volume and large insertion loss; inP-based modulationThe device has better performance and is easy to integrate, but the materials and the process are complex, and the cost is higher; the silicon-based modulator has small volume, is favorable for large-scale integration, but has relatively poor linearity; the polymer modulator bandwidth is wide but the stability is poor. The hybrid integrated modulator of the silicon-based substrate can realize the advantage combination of different material systems through the optimal design, so that the overall performance of the modulator is improved.
The miniaturization of photon integration is a necessary trend, the modulator unit is a photon integrated core device, the current MZI modulator is based on the thermo-optic and electro-optic effects, the electro-optic thermo-optic coefficient is lower, the size of a phase shift arm is larger, the whole size of the device can reach millimeter level, compared with an electronic device, the current photon device is oversized, if the size of the optical device-modulator is shrunk to 100nm, the chip manufacturing material is still based on silicon, and when the chip technology is developed to below 5nm, the material is eliminated and other materials can be searched for to replace the technology.
Disclosure of Invention
The invention aims to provide a design method of a miniature optical switch unit based on a double-hole GST phase change material, which aims to overcome the defects in the prior art.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the invention discloses a miniature optical switch unit based on a double-hole GST phase change material, which comprises a substrate layer, wherein the upper surface of the substrate layer is provided with a guided wave layer and a phase change material structure, the guided wave layer is a straight flat plate slot waveguide, the phase change material structure is a double-hole structure and is positioned in the middle of the straight flat plate slot waveguide structure, a cylindrical GST phase change material is inlaid in the double-hole structure, and the substrate layer, the guided wave layer and the outer surface of the GST phase change material are wrapped with protective layers.
Preferably, the substrate layer material is silicon or silicon dioxide, and the guided wave layer material is silicon nitride.
Preferably, the slit depth of the straight slab slot waveguide, the depth of the phase change material structure, the thickness of the GST phase change material and the thickness of the straight slab slot waveguide are all the same.
Preferably, the double-hole structure is symmetrically arranged on the straight slab slot waveguide by taking the slit of the straight slab slot waveguide as an axis.
Preferably, the GST phase change material is Ge 2 Sb 2 Te 5 Or Ge (Ge) 2 Sb 2 Se 4 Te。
Preferably, the substrate layer, the guided wave layer and the protective layer material wrapped on the outer surface of the GST phase change material are silicon dioxide.
The invention discloses a design method of a miniature optical switch unit based on double-hole GST phase change material, which comprises the following steps:
step 2, symmetrically etching a double-hole structure on the straight slab slot waveguide, embedding a cylindrical GST phase change material into the double-hole structure, and realizing switching of a switching state through the transition of crystalline state and amorphous state of the GST material;
and step 3, designing a layer of silicon dioxide serving as a protective layer on the surface of the whole micro optical switch unit.
Preferably, in the step 1, a layer of silicon dioxide is designed on the silicon-based surface of the substrate layer, and then a guided wave layer of a planar waveguide structure is designed on the silicon dioxide surface.
The invention has the beneficial effects that: the invention relates to a micro optical switch unit based on double-hole GST phase change materials and a design method thereof, wherein the GST phase change materials are embedded in a straight slab slot waveguide by designing the mixed integration of the straight slab slot waveguide and the GST phase change materials, and the functions of double-channel selection input, double-channel gating and mode switching can be completed for a transverse electric fundamental mode by the phase state of the GST phase change materials.
Drawings
FIG. 1 is an overall schematic of an embodiment of the present invention;
FIG. 2 is a schematic top plan view of an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an embodiment of the present invention;
FIG. 4 is a schematic diagram of switching TE mode propagation in "on" state of a micro-optical switch unit according to the present invention;
FIG. 5 is a schematic diagram of switching TE mode propagation in the "off" state of the micro-optical switch unit according to the present invention;
FIG. 6 is a simulation result of the switching plug loss of the micro optical switch unit in the "on" and "off" states;
in the figure: a 1-substrate layer, a 2-guided wave layer, a 3-phase change material structure and a 4-GST phase change material.
Detailed Description
The present invention will be further described in detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the detailed description and specific examples, while indicating the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
According to the invention, through designing the mixed integration of the straight slab waveguide and the GST phase change material, the GST phase change material is inlaid in the straight slab waveguide, compared with a silicon-based modulator of a traditional electronic device, the silicon-based modulator is beneficial to realizing the miniaturization trend of integration, reducing the size, reducing the power consumption of the device and being beneficial to large-scale integration of the silicon-based optoelectronic device.
As shown in fig. 1-3, the embodiment of the invention provides a micro optical switch unit based on a double-hole GST phase-change material, which comprises a substrate layer 1, wherein a guided wave layer 2 and a phase-change material structure 3 are arranged on the upper surface of the substrate layer 1, the guided wave layer 2 is a straight slab waveguide, the phase-change material structure 3 is a double-hole structure and is positioned in the middle of the straight slab waveguide structure, a cylindrical GST phase-change material 4 is inlaid in the double-hole structure, and protective layers are wrapped on the outer surfaces of the substrate layer 1, the guided wave layer 2 and the phase-change material.
The substrate layer 1 is made of silicon or silicon dioxide, and the guided wave layer 2 is made of silicon nitride.
The slit depth of the straight slab slot waveguide, the depth of the phase change material structure 3, the thickness of the GST phase change material 4 and the thickness of the straight slab slot waveguide are all the same.
The double-hole structure is symmetrically arranged on the straight slab slot waveguide by taking the slit of the straight slab slot waveguide as an axis.
The GST phase change material 4 is Ge 2 Sb 2 Te 5 Or Ge (Ge) 2 Sb 2 Se 4 Te。
The protective layer material wrapped on the outer surfaces of the substrate layer 1, the guided wave layer 2 and the GST phase change material 4 is silicon dioxide.
The embodiment of the invention provides a design method of a micro optical switch unit based on a double-hole GST phase change material, which comprises the following steps:
step 2, symmetrically etching a double-hole structure on the straight slab slot waveguide, embedding a cylindrical GST phase change material into the double-hole structure, and realizing switching of a switching state through the transition of crystalline state and amorphous state of the GST material;
and step 3, designing a layer of silicon dioxide serving as a protective layer on the surface of the whole micro optical switch unit.
Specifically, a layer of silicon dioxide with the thickness of 3um is designed on the silicon-based surface of the substrate layer, then a guided wave layer is designed on the silicon-based surface, the guided wave layer is silicon nitride with the thickness of 200nm, then a groove structure with the depth of 200nm is etched in the middle of the guided wave layer, the conventional waveguide mode is converted into a groove waveguide mode, the GST phase change material is cylindrical in structure, the height dimension is about 200nm, the GST phase change material is embedded in the silicon nitride waveguide, the switching of a switching state is realized through the conversion of the crystalline state to the amorphous state of the GST material, and the simulation result shows that the low loss of the GST on state and the high extinction ratio of the GST on state are realized.
The invention provides a miniature optical switch unit based on a double-hole GST phase change material, which has small size, low insertion loss and small extinction ratio, realizes an active device on a silicon nitride platform, and realizes miniaturization and photoelectric integration of a photon device.
The silicon nitride platform waveguide has low loss and high thermal stability, but is difficult to be used as an active device. The transformation of phase change materials in the crystalline amorphous state can lead to a significant refractive index change to achieve miniaturization of the modulator cell. The slot waveguide is designed, the optical field is mainly localized in the slot, and the action strength of the optical field and the phase change material can be further increased.
The micro optical switch unit based on the double-hole GST phase change material is provided, a conventional waveguide mode is converted into a slot waveguide mode, the main energy of an optical field is concentrated in a slot, the phase change material is added on the basis of the slot waveguide, the action intensity is improved, and the switching of a switch state can be realized through the crystalline amorphous state conversion. The invention also has the characteristic of low energy consumption, and the state can be maintained in the original state through the phase change material without external energy stimulation, so that the energy consumption can be greatly reduced in the switching process.
Fig. 2 is a schematic top view of a micro optical switch unit based on a dual-hole phase change material with a silicon nitride platform, wherein the left end is an input port and the right end is an output port.
FIG. 3 shows a schematic plane view of a micro optical switch unit based on a dual-hole phase-change material on a silicon nitride platform, wherein a layer of 3um silicon dioxide is grown on the silicon substrate surface by adopting GST phase-change material; the thickness of the silicon nitride waveguide is 200nm, the height of the GST structure is 200nm, the GST structure is embedded between the silicon nitride waveguides, and the depth of the etching groove in the middle is 200nm.
Fig. 4 and 5 are schematic diagrams showing simulation of the effect of light passing through the GST phase change material in amorphous and crystalline states, respectively, according to the present embodiment. As shown in fig. 6, an optical power of 0 dB was inputted from the left end of the slot waveguide in the form of a fundamental mode, the GST material was set to an amorphous state, and the light outputted from the right end of the slot waveguide was measured using an optical power meter, and the insertion loss was 1dB.
Fig. 6 shows that the extinction ratio was 5 dB by inputting optical power of 0 dB in the form of a fundamental mode from the left end of the slot waveguide, setting the GST material in a crystalline state, and measuring the light output from the right end of the slot waveguide using an optical power meter. Comparing fig. 6, it is proved that the invention can realize low power consumption and high extinction ratio of the GST phase change material micro optical switch unit device, and has practical significance for realizing large-scale integration of silicon-based optical devices and miniaturization of optical modulators.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, or alternatives falling within the spirit and principles of the invention.
Claims (8)
1. A miniature optical switch unit based on double-hole GST phase change material is characterized in that: the high-efficiency phase change material comprises a substrate layer, wherein a guided wave layer and a phase change material structure are arranged on the upper surface of the substrate layer, the guided wave layer is a straight flat slot waveguide, the phase change material structure is of a double-hole structure and is positioned in the middle of the straight flat slot waveguide structure, cylindrical GST phase change materials are inlaid in the double-hole structure, and protective layers are wrapped on the outer surfaces of the substrate layer, the guided wave layer and the GST phase change materials.
2. A dual hole GST phase change material based micro optical switch unit as claimed in claim 1, wherein: the substrate layer material is silicon or silicon dioxide, and the guided wave layer material is silicon nitride.
3. A dual hole GST phase change material based micro optical switch unit as claimed in claim 1, wherein: the slit depth of the straight slab slot waveguide, the depth of the phase change material structure, the thickness of the GST phase change material and the thickness of the straight slab slot waveguide are all the same.
4. A dual hole GST phase change material based micro optical switch unit as claimed in claim 1, wherein: the double-hole structure is symmetrically arranged on the straight slab slot waveguide by taking the slit of the straight slab slot waveguide as an axis.
5. A dual hole GST phase change material based micro optical switch unit as claimed in claim 1, wherein: the GST phase change material is Ge 2 Sb 2 Te 5 Or Ge (Ge) 2 Sb 2 Se 4 Te。
6. A dual hole GST phase change material based micro optical switch unit as claimed in claim 1, wherein: and the substrate layer, the guided wave layer and the protective layer wrapped on the outer surface of the GST phase change material are made of silicon dioxide.
7. A design method of a miniature optical switch unit based on double-hole GST phase change material is characterized in that: the method comprises the following steps:
step 1, designing a guided wave layer of a planar waveguide structure on the silicon-based surface of a substrate layer, and etching a groove structure with the depth consistent with the thickness of the guided wave layer on the central line of the length direction of the guided wave layer, so that the guided wave layer is a straight flat slab waveguide and is used for modulating the optical transmission phase;
step 2, symmetrically etching a double-hole structure on the straight slab slot waveguide, embedding a cylindrical GST phase change material into the double-hole structure, and realizing switching of a switching state through the transition of crystalline state and amorphous state of the GST material;
and step 3, designing a layer of silicon dioxide serving as a protective layer on the surface of the whole micro optical switch unit.
8. The method for designing a micro optical switch unit based on dual-hole GST phase change material as claimed in claim 7, wherein: in the step 1, a layer of silicon dioxide is designed on the silicon-based surface of the substrate layer, and then a guided wave layer of a planar waveguide structure is designed on the silicon dioxide surface.
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| CN202211638784.1A CN116009284A (en) | 2022-12-20 | 2022-12-20 | Micro optical switch unit based on double-hole GST phase change material and design method |
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| CN202211638784.1A CN116009284A (en) | 2022-12-20 | 2022-12-20 | Micro optical switch unit based on double-hole GST phase change material and design method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210141152A1 (en) * | 2019-11-11 | 2021-05-13 | Oregon State University | Hybrid Silicon-Transparent Conductive Oxide Devices |
| CN115032819A (en) * | 2022-08-15 | 2022-09-09 | 之江实验室 | Co-packaged light engine system and silicon-based modulator for phase change material array thereof |
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115421246A (en) * | 2022-11-03 | 2022-12-02 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
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- 2022-12-20 CN CN202211638784.1A patent/CN116009284A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210141152A1 (en) * | 2019-11-11 | 2021-05-13 | Oregon State University | Hybrid Silicon-Transparent Conductive Oxide Devices |
| CN115308847A (en) * | 2022-07-11 | 2022-11-08 | 宁波大学 | Dual-mode interference 2X 2 optical waveguide switch based on phase change material |
| CN115032819A (en) * | 2022-08-15 | 2022-09-09 | 之江实验室 | Co-packaged light engine system and silicon-based modulator for phase change material array thereof |
| CN115421246A (en) * | 2022-11-03 | 2022-12-02 | 之江实验室 | Intensity modulator based on GST nanodots on SOI |
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