CN108365303A - A kind of single polarization temperature control Terahertz switch - Google Patents
A kind of single polarization temperature control Terahertz switch Download PDFInfo
- Publication number
- CN108365303A CN108365303A CN201810064731.0A CN201810064731A CN108365303A CN 108365303 A CN108365303 A CN 108365303A CN 201810064731 A CN201810064731 A CN 201810064731A CN 108365303 A CN108365303 A CN 108365303A
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- CN
- China
- Prior art keywords
- waveguide
- temperature control
- single polarization
- vanadium dioxide
- terahertz
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of single polarization temperature control Terahertz switches.It includes signal input part, signal output end, input waveguide, output waveguide, intermediate waveguide；Wherein, by the vanadium dioxide thin slice and silicon sheet of identical quantity, cross arrangement forms successively for intermediate waveguide；When THz wave is inputted from input waveguide, by adjusting temperature level, change the effective dielectric constant of vanadium dioxide, function of temperature control that realization switch the THz wave adjustable into trip temperature to the resonant frequency of the switch to realize.The present invention has the features such as simple and compact for structure, easily to realize, has huge application value in Terahertz communication system, sensing, imaging side face.
Description
Technical field
The present invention relates to a kind of switch more particularly to a kind of single polarization temperature control Terahertz switches.
Background technology
THz wave between microwave and far red light, is led in electronics to the transition of photonic propulsion in electromagnetic spectrum
The advantages of domain, it is integrated with microwave communication and optic communication, at the same it is relatively more existing there are two types of means of communication, and THz wave shows one
A little distinctive advantageous properties, for example transmission capacity is big, good directionality, strong antijamming capability, photon energy are low etc..Terahertz switchs
It is one of the critical function device of Terahertz communication and imaging system, the further investigation of Terahertz switch is to the wide of Terahertz Technology
General application has far reaching significance.
Vanadium dioxide has important application in Terahertz function element.In the low oxide of vanadium, vanadium dioxide
With phase time-varying amplitude, big, phase transition temperature receives much attention closest to room temperature.When critical-temperature is 340K (68 DEG C), vanadium dioxide hair
Raw semiconductor --- metal phase change, metallic state when semiconductor form when by less than 68 DEG C is changed into higher than 68 DEG C, with phase
Invertibity mutation can also occur for variation, physical property.Therefore, the characteristic of vanadium dioxide carries out active control with regard to usable temp
System.The present invention is switched using vanadium dioxide to make THz wave, and the temperature control characteristic of vanadium dioxide dielectric constant is utilized, passes through
Change temperature level to change vanadium dioxide relative permittivity value, realize the translation phenomenon of resonant frequency, to realize switch
Adjustable function.
Invention content
It is an object of the invention to solve problems of the prior art, and a kind of single polarization temperature control Terahertz is provided and is opened
It closes, this is a kind of novel ultra-compact high-performance Terahertz switch, be can be placed on chip for Terahertz communication system, sensing
System etc..
In order to achieve the above object, technical scheme is as follows：
Single polarization temperature control Terahertz switch, it include signal input part, signal output end, input waveguide, output waveguide, in
Between waveguide, vanadium dioxide thin slice, silicon sheet, be intermediate waveguide on the right of input waveguide, intermediate waveguide is the dioxy of identical quantity
Change vanadium thin slice and silicon sheet intersect successively to be close to arrange, and is output waveguide, a left side for input waveguide on the right of intermediate waveguide
End is equipped with signal input part, and the right end of output waveguide is equipped with signal output end, and terahertz polarization signal is inputted from signal input part,
From signal output end export, comprising signal input part, signal output end, input waveguide, output waveguide and centre waveguide it is entire
Structure is placed in one piece of substrate of glass.When THz wave is inputted from input waveguide, by adjusting temperature level, change dioxy
The effective dielectric constant for changing vanadium, adjustable into trip temperature to the resonant frequency of the switch to realize, the THz wave is opened in realization
The function of temperature control of pass.
Based on said program, following preferred embodiment can be further used：
The material of the input waveguide is silicon materials, and length 1mm, width is 400 μm, a height of 220 μm.Described is defeated
The material for going out waveguide is silicon materials, and length 1mm, width is 400 μm, a height of 220 μm.Vanadium dioxide in the intermediate waveguide
Thin slice is identical with the shape size of silicon sheet.The length of the vanadium dioxide thin slice and silicon sheet is 5 μm, and width is 400 μm,
A height of 220 μm, quantity is all 20.
In the present invention, it is the direction in Fig. 2 from left to right to define length direction；Width direction be plane on length direction
Vertical direction, the i.e. direction of vertical paper in Fig. 2；Short transverse is the direction in Fig. 2 from top to bottom.
The present invention is switched using vanadium dioxide to make THz wave, and the temperature control that vanadium dioxide dielectric constant is utilized is special
Property, change vanadium dioxide relative permittivity value by changing temperature level, realize the translation phenomenon of resonant frequency, to real
Now switch adjustable function.The present invention has the features such as simple and compact for structure, easily to realize, in Terahertz communication system, sensing, imaging
Aspect has huge application value.
Description of the drawings：
Fig. 1 is single polarization temperature control Terahertz switch three dimensional structure diagram；
Fig. 2 is single polarization temperature control Terahertz switch side view；
Fig. 3 is the "On" state schematic diagram of single polarization temperature control Terahertz switch；
Fig. 4 is the "Off" state schematic diagram of single polarization temperature control Terahertz switch；
Fig. 5 is single polarization temperature control Terahertz switch TM polarizer transmission curve graphs；
Fig. 6 is single polarization temperature control Terahertz switch TE polarizer transmission curve graphs；
Specific implementation mode
As shown in Fig. 1~2, a kind of single polarization temperature control Terahertz switch, it include signal input part 1, signal output end 2,
Input waveguide 3, output waveguide 4, intermediate waveguide 5, vanadium dioxide thin slice 6, silicon sheet 7, the right of input waveguide 3 is intermediate waveguide
5, intermediate waveguide 5 is vanadium dioxide thin slice 6 by shape size and quantity all same and silicon sheet 7 intersect successively be close to arrangement and
At being output waveguide 4 on the right of intermediate waveguide 5, the left end of input waveguide 3 is equipped with signal input part 1, the right side of output waveguide 4
End is equipped with signal output end 2, and terahertz polarization signal is inputted from signal input part 1, is exported from signal output end 2.Including signal
Total including input terminal 1, signal output end 2, input waveguide 3, output waveguide 4, intermediate waveguide 5 is placed on one block of glass
In substrate.When THz wave is inputted from input waveguide, by adjusting temperature level, the effective dielectric for changing vanadium dioxide is normal
Number, it is adjustable into trip temperature to the resonant frequency of the switch to realize, realize the function of temperature control switched to the THz wave.
Embodiment 1
In the present embodiment, single temperature control Terahertz that polarizes switchs each component shape as described above (Fig. 1~2), therefore no longer superfluous
It states.But the design parameter of each component is as follows：Input waveguide material is silicon materials, and length 1mm, width is 400 μm, is highly
220μm.Output waveguide material is silicon materials, and length 1mm, width is 400 μm, is highly 220 μm.Intermediate waveguide is by 20
Vanadium dioxide thin slice and 20 silicon sheets intersect close-packed arrays and form successively, and two kinds of chip shape sizes are identical, a length of 5 μm, width
For 400 μm, be highly 220 μm.The property indices of single polarization temperature control Terahertz switch use COMSOL Multiphy softwares
It is tested.Fig. 3 and Fig. 4 is respectively the "On" state schematic diagram and "Off" shape in the case where temperature is 220K of temperature control Terahertz switch
State schematic diagram, as seen from the figure, after inputting THz wave, which can realize the control to THz wave break-make.Fig. 5 is terahertz
It hereby switchs in TM polarizer transmission schematic diagrames；As seen from the figure, TM moulds cannot with this configuration, so transmitance is maintained at -40dB.
Fig. 6 is Terahertz switch TE polarizer transmission schematic diagrames increases to 350K in temperature from 220K as seen from the figure, TE polarized waves
It all corresponds to single frequency point transmitance and is more than 5dB, realize adjustable function.
Claims (5)
1. a kind of single polarization temperature control Terahertz switch, it is characterised in that it includes signal input part (1), signal output end (2), defeated
Enter waveguide (3), output waveguide (4), intermediate waveguide (5), vanadium dioxide thin slice (6), silicon sheet (7), the right of input waveguide (3)
It is intermediate waveguide (5), intermediate waveguide (5) is the vanadium dioxide thin slice (6) of identical quantity and silicon sheet (7) intersects be close to arrange successively
It arranges, is output waveguide (4) on the right of intermediate waveguide (5), the left end of input waveguide (3) is equipped with signal input part (1), defeated
The right end for going out waveguide (4) is equipped with signal output end (2), and terahertz polarization signal is inputted from signal input part (1), is exported from signal
(2) output is held, including signal input part (1), signal output end (2), input waveguide (3), output waveguide (4) and intermediate waveguide
(5) total is placed in one piece of substrate of glass.
2. a kind of single polarization temperature control Terahertz switch according to claim 1, it is characterised in that the input waveguide (3)
Material be silicon materials, length 1mm, width be 400 μm, a height of 220 μm.
3. a kind of single polarization temperature control Terahertz switch according to claim 1, it is characterised in that the output waveguide (4)
Material be silicon materials, length 1mm, width be 400 μm, a height of 220 μm.
4. a kind of single polarization temperature control Terahertz switch according to claim 1, it is characterised in that the intermediate waveguide (5)
Middle vanadium dioxide thin slice (6) is identical with the shape size of silicon sheet (7).
5. a kind of single polarization temperature control Terahertz switch according to claim 1, it is characterised in that the vanadium dioxide is thin
The length of piece (6) and silicon sheet (7) is 5 μm, and width is 400 μm, and a height of 220 μm, quantity is all 20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810064731.0A CN108365303B (en) | 2018-01-23 | 2018-01-23 | Single-polarization temperature control terahertz switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810064731.0A CN108365303B (en) | 2018-01-23 | 2018-01-23 | Single-polarization temperature control terahertz switch |
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| Publication Number | Publication Date |
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| CN108365303A true CN108365303A (en) | 2018-08-03 |
| CN108365303B CN108365303B (en) | 2020-08-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810064731.0A Active CN108365303B (en) | 2018-01-23 | 2018-01-23 | Single-polarization temperature control terahertz switch |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115167014A (en) * | 2022-09-02 | 2022-10-11 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105629623A (en) * | 2015-06-24 | 2016-06-01 | 上海大学 | Tunable temperature bistable optical switch |
| CN106569350A (en) * | 2016-10-26 | 2017-04-19 | 上海交通大学 | Electro-optic modulator based on Si-VO2 composite waveguide |
-
2018
- 2018-01-23 CN CN201810064731.0A patent/CN108365303B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105629623A (en) * | 2015-06-24 | 2016-06-01 | 上海大学 | Tunable temperature bistable optical switch |
| CN106569350A (en) * | 2016-10-26 | 2017-04-19 | 上海交通大学 | Electro-optic modulator based on Si-VO2 composite waveguide |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115167014A (en) * | 2022-09-02 | 2022-10-11 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
| CN115167014B (en) * | 2022-09-02 | 2022-11-22 | 之江实验室 | C-waveband silicon-based modulator based on vanadium dioxide metamaterial structure |
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| Publication number | Publication date |
|---|---|
| CN108365303B (en) | 2020-08-07 |
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