CN109188730A - A kind of broadband terahertz wave modulator, preparation method and modulating system - Google Patents
A kind of broadband terahertz wave modulator, preparation method and modulating system Download PDFInfo
- Publication number
- CN109188730A CN109188730A CN201811178507.0A CN201811178507A CN109188730A CN 109188730 A CN109188730 A CN 109188730A CN 201811178507 A CN201811178507 A CN 201811178507A CN 109188730 A CN109188730 A CN 109188730A
- Authority
- CN
- China
- Prior art keywords
- modulator
- hot spot
- thz wave
- laser
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
Abstract
The present invention proposes that a kind of broadband Terahertz modulating system, including first laser transmitter, second laser transmitter, THz wave transmitter and modulator, first laser transmitter issue first laser beam and be irradiated to the one side of modulator and form the first hot spot；Second laser transmitter issues second laser beam and is irradiated to the another side of modulator and forms the second hot spot；THz wave transmitter issues THz wave and is incident on the wherein one side of modulator and forms third hot spot；Third hot spot and first hot spot or the second hot spot are least partially overlapped.The present invention irradiates two surfaces of print with two beam laser respectively, and photo-thermal effect changes phase-change material vanadium dioxide from insulation state to metallic state, to realize the big depth modulation to THz wave intensity in transmission.Wideband, big depth and fast modulation can be achieved in the present invention under lower optical power, and the Terahertz modulator of this method production has important application value in the Terahertz communication of the following quickly full photocontrol.
Description
Technical field
The present invention relates to Terahertz Technology field, in particular to a kind of broadband terahertz wave modulator, preparation method and tune
System processed.
Background technique
Terahertz (Terahertz:THz) wave typically refers to electromagnetic wave of the frequency within the scope of 0.1THz-10THz.Due to
THz wave have penetrability is strong, photon energy is low, bandwidth and substance finger print spectrum etc. characteristics, make it in airport security, biology
The fields such as medicine, broadband connections have huge application potential.THz wave intensity modulated is must not in Terahertz Technology application
Link can be lacked, and current THz wave intensity modulating method is unfavorable for the popularization and application of Terahertz Technology.
THz wave intensity modulating method is generally divided into automatically controlled modulation, light-operated modulation, temperature control modulation, magnetic modulation and mechanical tune
System etc..Automatically controlled modulator approach and ic process compatibility are big, easy of integration, but technics comparing is cumbersome.Temperature control modulator approach
Response speed is slow, and is influenced by working environment bigger.The modulating speed of machinery modulation method and magnetic modulator approach also compares
Slowly, device size is big, and not easy to operate.
The modulating speed of light-operated modulator approach is fast, easy to operate, becomes a kind of ideal scheme of fast modulation THz wave.
Currently, the Terahertz modulator based on light modulation mostly uses greatly graphene and vanadium oxide material, since the light modulation of graphene is deep
Spend it is low, be not able to satisfy it is many to modulation the higher application field of depth requirements.Vanadium oxide in 68 degrees centigrades because have very
Good insulator-metal phase transition characteristic, becomes a kind of ideal material of light-operated Terahertz modulator.But currently based on oxidation
There are the following problems for the terahertz light control modulator of vanadium:
(1) general modulation depth is generally no more than 80%.
(2) although also there is a small amount of more than 80%, the very high pumping light power of needs (greater than 2W), and high pump light
Power is easy to bring thermal damage to device.
(3) this kind of device surface all has a metal structure and pattern, and due to THz wave be to metal it is impervious,
Very big insertion loss can be introduced in this way.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of modulation of broadband THz wave
Device, preparation method and modulating system.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation side of broadband terahertz wave modulator
Method, the preparation method include: respectively in one layer of vanadium dioxide film layer of substrate two sides spin coating.
Optionally, the vanadium dioxide film layer is formed by the spin coating vanadium dioxide solution in substrate.
Optionally, the substrate is High Resistivity Si, the High Resistivity Si with a thickness of 300 μm -700 μm, resistance value is greater than 3000 Europe
Centimetres of nurse.
Optionally, the vanadium dioxide film layer with a thickness of 50nm-2000nm.
Optionally, the vanadium dioxide film layer is to anneal 5-30 minutes to be formed in substrate under 80-300 degrees Celsius.
In order to achieve the above objects and other related objects, the present invention also provides a kind of broadband terahertz wave modulators, by institute
The method stated is prepared.
In order to achieve the above objects and other related objects, the present invention also provides a kind of broadband THz wave modulating systems, should
System includes first laser transmitter, second laser transmitter, THz wave transmitter and the modulator,
The first laser transmitter issues first laser beam and is irradiated to the one side of the modulator and forms the first hot spot；
The second laser transmitter issues second laser beam and is irradiated to the another side of the modulator and forms the second light
Spot；
The THz wave transmitter issues THz wave and is incident on the wherein one side of the modulator and forms third light
Spot；
The third hot spot and first hot spot or the second hot spot are least partially overlapped.
Optionally, the first laser beam and second laser beam are respectively with oblique two tables for being mapped to modulator of 10-75 degree
Face；The wave-length coverage of the first laser beam and second laser speed is 350nm-950nm.
Optionally, the region of the third hot spot is located in first spot area or the second spot area.
Optionally, the center of first hot spot, the second hot spot center be overlapped respectively with the center of the third hot spot.
As described above, a kind of broadband terahertz wave modulator, preparation method and modulating system of the invention, have the advantages that
(1) preparation process is simple, at low cost.The conventional device for carrying out THz wave modulation based on vanadium oxide phase transformation is most
Vanadium oxide, complex process, preparation cost height are prepared using magnetron sputtering technique.The present invention prepares vanadium oxide using spin coating proceeding,
Preparation process is simple, at low cost.
(2) modulation depth is big.It is compared with conventional light modulating method (light modulating method for being based particularly on vanadium oxide),
The Terahertz modulator that the present invention makes is modulated due to using two-sided vanadium oxide and double light path, can be in lower optical power
It is lower to obtain big modulation depth.
(3) modulating speed is fast.Due to using light modulating method, the present invention can achieve a picosecond amount the theoretic response time
Grade, therefore can be used for the field high to modulation rate request such as THz wave communication.
Detailed description of the invention
In order to which the present invention is further explained, described content, with reference to the accompanying drawing makees a specific embodiment of the invention
Further details of explanation.It should be appreciated that these attached drawings are only used as typical case, and it is not to be taken as to the scope of the present invention
It limits.
Fig. 1 light path schematic diagram of the invention that THz wave modulation in broadband is carried out using modulator；
Fig. 2 is print to THz wave intensity modulated effect diagram (optical maser wavelength 650nm)；
Wherein, 1, the THz wave before modulation, 2, first laser beam, 3, vanadium dioxide film, 4, vanadium dioxide film, 5,
Substrate, 6, modulated THz wave, 7, second laser beam.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that in the absence of conflict, following embodiment and implementation
Feature in example can be combined with each other.
It should be noted that illustrating the basic structure that only the invention is illustrated in a schematic way provided in following embodiment
Think, only shown in schema then with related component in the present invention rather than component count, shape and size when according to actual implementation
Draw, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel
It is likely more complexity.
Embodiment one
The present invention provides a kind of preparation method of broadband terahertz wave modulator, which includes: using sol evenning machine
It is specific that spin coating one layer of phase-change material vanadium dioxide film, preparation process are distinguished in the front and back sides of the high resistant silicon base of twin polishing
The following steps are included:
1, select it is a piece of with a thickness of 300 μm -700 μm, resistance value be greater than 3000 ohm of cm sizes be the two-sided of 1cm*1cm
High resistant silicon wafer is polished as substrate.
2, twin polishing high resistant silicon wafer is put into supersonic wave cleaning machine to clean be 5-10 minutes.
3, cleaned high resistant silicon wafer is put into drying box and is heated 15-20 minutes, dry print.
4, the high resistant silicon wafer of drying is placed on sol evenning machine, opens vacuum pump and print is sucked, and in the upper drop two of surface drop
Vanadium oxide solution is rotated 2 minutes, the vanadium dioxide for forming one layer of 50nm-2000nm or so is thin with 1000-4000 revs/min of revolving speed
Film layer 3.
5, the print of vanadium dioxide film is put into anneal station single side spin coating, with 80-300 degrees Celsius of annealing 5-30 points
Clock.
6, the print after annealing is placed again into sol evenning machine, opens vacuum pump and be sucked, is existed with the method as step 4
The vanadium dioxide film layer of high resistant silicon wafer another side spin coating same thickness.
7, the good high resistant silicon wafer of spin coating is annealed again with the same method of step 5, annealing time is constant.
In an embodiment, substrate with a thickness of 500 μm.
In an embodiment, vanadium dioxide film layer with a thickness of 100nm, the revolving speed of sol evenning machine is 1000 revs/min, annealing
Temperature be 150 degrees Celsius, time of annealing is 10min.
Embodiment two
The present invention also provides a kind of broadband terahertz wave modulator, the method described in embodiment one is prepared.
Embodiment three
In order to achieve the above objects and other related objects, the present invention also provides a kind of broadband THz wave modulating systems, should
System includes first laser transmitter, second laser transmitter, THz wave transmitter and modulator above-mentioned,
The first laser transmitter issues first laser beam and is irradiated to the one side of the modulator and forms the first hot spot；
The second laser transmitter issues second laser beam and is irradiated to the another side of the modulator and forms the second light
Spot；
The THz wave transmitter issues THz wave and is incident on the wherein one side of the modulator and forms third light
Spot；
The third hot spot and first hot spot or the second hot spot are least partially overlapped.
Wherein, modulator is vertically put into THz wave transmission optical path as shown in Figure 1.
In an embodiment, the first laser beam and second laser beam are respectively with the oblique modulator that is mapped to of 10-75 degree
Two surfaces；The wave-length coverage of the first laser beam and second laser speed is 350nm-950nm.
In an embodiment, the region of the third hot spot is located in first spot area or the second spot area.
The face of first laser beam irradiation and the face of THz wave incidence belong to the same face, then the region of third hot spot is located at first light
In spot region；Or second laser beam irradiation face and the face of THz wave incidence belong to the same face, then the region of third hot spot
In in second spot area.It can guarantee that THz wave various pieces can be by the modulation of pump light in this way.
In an embodiment, the center of first hot spot, the second hot spot center respectively and in the third hot spot
The heart is overlapped.
In an embodiment, the wavelength of the first laser beam and second laser speed is 650nm, first laser transmitting
The peak power output of device and second laser transmitter is 120mW, and first laser transmitter and second laser transmitter are with 45 degree
It is oblique to be mapped to print (i.e. modulator) former and later two surfaces.
The photo-thermal effect of laser causes vanadium dioxide film that the phase transformation of insulator-metal occurs, to realize to transmission too
The modulation of hertz intensity of wave.The Output optical power for adjusting the included adjustable pump laser of attenuator of pump laser, can
To change the phase transformation effect that insulator-metal occurs for vanadium dioxide film, finally changeable light modulation Terahertz wave modulation is deep
Degree.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of preparation method of broadband terahertz wave modulator, which is characterized in that the preparation method includes:
Respectively in one layer of vanadium dioxide film layer of substrate two sides spin coating.
2. a kind of preparation method of broadband terahertz wave modulator according to claim 1, which is characterized in that the dioxy
It changes vanadium film layer, is formed by the spin coating vanadium dioxide solution in substrate.
3. a kind of preparation method of broadband terahertz wave modulator according to claim 1, which is characterized in that the substrate
For High Resistivity Si, the High Resistivity Si with a thickness of 300 μm -700 μm, resistance value is greater than 3000 ohm centimetres.
4. a kind of preparation method of broadband terahertz wave modulator according to claim 2, which is characterized in that the dioxy
Change vanadium film layer with a thickness of 50nm-2000nm.
5. a kind of preparation method of broadband terahertz wave modulator according to claim 3, which is characterized in that the dioxy
Changing vanadium film layer is to anneal 5-30 minutes to be formed in substrate under 80-300 degrees Celsius.
6. a kind of broadband terahertz wave modulator, which is characterized in that the preparation of the method as described in Claims 1 to 5 any one
It forms.
7. a kind of broadband THz wave modulating system, which is characterized in that the system includes first laser transmitter, second laser hair
Emitter, THz wave transmitter and the modulator as described in claims 6,
The first laser transmitter issues first laser beam and is irradiated to the one side of the modulator and forms the first hot spot；
The second laser transmitter issues second laser beam and is irradiated to the another side of the modulator and forms the second hot spot；
The THz wave transmitter issues THz wave and is incident on the wherein one side of the modulator and forms third hot spot；
The third hot spot and first hot spot or the second hot spot are least partially overlapped.
8. a kind of broadband THz wave modulating system according to claim 7, which is characterized in that the first laser beam with
Second laser beam is respectively with oblique two surfaces for being mapped to modulator of 10-75 degree；The first laser beam and the second laser
The wave-length coverage of speed is 350nm-950nm.
9. a kind of broadband THz wave modulating system according to claim 8, which is characterized in that the area of the third hot spot
Domain is located in first spot area or the second spot area.
10. a kind of broadband THz wave modulating system according to claim 9, which is characterized in that first hot spot
Center, the second hot spot center be overlapped respectively with the center of the third hot spot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811178507.0A CN109188730A (en) | 2018-10-10 | 2018-10-10 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811178507.0A CN109188730A (en) | 2018-10-10 | 2018-10-10 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109188730A true CN109188730A (en) | 2019-01-11 |
Family
ID=64947486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811178507.0A Pending CN109188730A (en) | 2018-10-10 | 2018-10-10 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109188730A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110247289A (en) * | 2019-07-25 | 2019-09-17 | 桂林航天工业学院 | A kind of Terahertz modulator convenient for frequency modulation |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361614A (en) * | 2013-06-29 | 2013-10-23 | 天津大学 | Method for preparing Terahertz modulator film material based on flexible substrate |
| CN104030357A (en) * | 2014-06-27 | 2014-09-10 | 武汉工程大学 | Method for preparing vanadium dioxide thin films by using organic sol-gel |
| CN104407453A (en) * | 2014-12-17 | 2015-03-11 | 中国电子科技集团公司第三十八研究所 | Light-control type adjustable terahertz wave attenuator and application method thereof |
| WO2016013898A1 (en) * | 2014-07-25 | 2016-01-28 | 한국해양대학교 산학협력단 | High-efficiency terahertz transceiver enabling frequency modulation |
| CN105824138A (en) * | 2016-04-13 | 2016-08-03 | 电子科技大学 | Light-operated terahertz modulator based on graphene/silicon-doped compound double-layer structure |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
| CN207799303U (en) * | 2017-04-12 | 2018-08-31 | 中国计量大学 | A kind of high-performance double-layer graphene THz wave transmission-type modulator |
-
2018
- 2018-10-10 CN CN201811178507.0A patent/CN109188730A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103361614A (en) * | 2013-06-29 | 2013-10-23 | 天津大学 | Method for preparing Terahertz modulator film material based on flexible substrate |
| CN104030357A (en) * | 2014-06-27 | 2014-09-10 | 武汉工程大学 | Method for preparing vanadium dioxide thin films by using organic sol-gel |
| WO2016013898A1 (en) * | 2014-07-25 | 2016-01-28 | 한국해양대학교 산학협력단 | High-efficiency terahertz transceiver enabling frequency modulation |
| CN104407453A (en) * | 2014-12-17 | 2015-03-11 | 中国电子科技集团公司第三十八研究所 | Light-control type adjustable terahertz wave attenuator and application method thereof |
| CN105824138A (en) * | 2016-04-13 | 2016-08-03 | 电子科技大学 | Light-operated terahertz modulator based on graphene/silicon-doped compound double-layer structure |
| CN207799303U (en) * | 2017-04-12 | 2018-08-31 | 中国计量大学 | A kind of high-performance double-layer graphene THz wave transmission-type modulator |
| CN108227243A (en) * | 2018-01-19 | 2018-06-29 | 电子科技大学 | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 刘元忠等: "基于石墨烯超材料深度可调的调制器", 《光学学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110247289A (en) * | 2019-07-25 | 2019-09-17 | 桂林航天工业学院 | A kind of Terahertz modulator convenient for frequency modulation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104678598B (en) | Terahertz modulator, the preparation method of Terahertz modulator and tuning methods | |
| CN110515223A (en) | A kind of Terahertz dynamic phase modulation device based on vanadium dioxide | |
| Shi et al. | Terahertz modulators based on silicon nanotip array | |
| CN108287418B (en) | A kind of automatically controlled modulator of THz wave | |
| CN102081274A (en) | Vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and method | |
| CN102393571B (en) | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed | |
| CN103984124A (en) | Multi-frequency response TeraHertz wave modulator | |
| CN102303429A (en) | Tunable flat absorbing material for electromagnetic waves | |
| CN106935946A (en) | A kind of tunable terahertz filter based on Meta Materials | |
| CN109814283A (en) | The super surface modulation device of the open type Terahertz of low voltage drive and preparation method | |
| CN105824138A (en) | Light-operated terahertz modulator based on graphene/silicon-doped compound double-layer structure | |
| Wun et al. | Photonic high-power continuous wave THz-wave generation by using flip-chip packaged uni-traveling carrier photodiodes and a femtosecond optical pulse generator | |
| Jin et al. | Double periodic composite right/left handed transmission line and its applications to compact leaky-wave antennas | |
| CN108254944A (en) | Light-operated terahertz wave modulator of the micro-nano mixed structure of silicon substrate and preparation method thereof | |
| CN109188730A (en) | A kind of broadband terahertz wave modulator, preparation method and modulating system | |
| CN103021821B (en) | The method for annealing of the semiconductor structure being positioned in flexible substrate | |
| CN110531540A (en) | MoTe2With the full light Terahertz modulator of Si composite construction and preparation method thereof | |
| Wun et al. | Type-II GaAs0. 5Sb0. 5/InP uni-traveling carrier photodiodes with sub-terahertz bandwidth and high-power performance under zero-bias operation | |
| Wun et al. | Photonic high-power 160-GHz signal generation by using ultrafast photodiode and a high-repetition-rate femtosecond optical pulse train generator | |
| CN108227243A (en) | Automatically controlled THz wave regulation and control device of silicon substrate all dielectric type and preparation method thereof | |
| CN106646930A (en) | Multi-stage terahertz modulator based on flexible graphene field effect transistor structure | |
| CN203444187U (en) | Full-light-controlled terahertz intensity modulator and terahertz intensity modulator | |
| CN103361614A (en) | Method for preparing Terahertz modulator film material based on flexible substrate | |
| CN106840420A (en) | A kind of infrared single photon detectorses equipment | |
| CN105093406A (en) | Lithium niobate optical waveguide and method for preparing near-stoichiometric lithium niobate optical waveguide by means of titanium diffusion and vapor transport equilibration (VTE) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190111 |
|
| RJ01 | Rejection of invention patent application after publication |