CN203444187U - Full-light-controlled terahertz intensity modulator and terahertz intensity modulator - Google Patents
Full-light-controlled terahertz intensity modulator and terahertz intensity modulator Download PDFInfo
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- CN203444187U CN203444187U CN201320506564.3U CN201320506564U CN203444187U CN 203444187 U CN203444187 U CN 203444187U CN 201320506564 U CN201320506564 U CN 201320506564U CN 203444187 U CN203444187 U CN 203444187U
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Abstract
The utility model relates to the technical field of terahertz spectrums, in particular to a full-light-controlled terahertz intensity modulator and a terahertz intensity modulator. The full-light-controlled terahertz intensity modulator and the terahertz intensity modulator are based on graphene and used for solving the problems in the prior art. According to the full-light-controlled terahertz intensity modulator and the terahertz intensity modulator, the photon absorption efficiency of the graphene is enhanced through gold nanoparticles, the concentration of photon-generated carriers is increased, and therefore absorption of terahertz waves is enhanced, and the modulation effect of the modulators is enhanced. The full-light-controlled terahertz intensity modulator comprises a terahertz wave generation device, a pump optical wave generation device, the terahertz intensity modulator and the like, photons of the pump optical waves are absorbed to generate the photon-generated carriers, then, a terahertz wave electric field drives the terahertz waves used for absorption and photon-generated carriers to interact with other particles, the energy of the terahertz wave electric field is dispersed to other particles, and therefore the intensity of the terahertz waves is modulated, and finally the output intensity of the terahertz waves is modulated. The full-light-controlled terahertz intensity modulator and the terahertz intensity modulator are mainly applied to terahertz modulation systems and the terahertz research field.
Description
Technical field
The utility model relates to THz wave spectral technology field, especially relates to a kind of complete light-operated Terahertz intensity modulator and Terahertz intensity modulator.
Background technology
THz wave has broad application prospects at aspects such as biomedical diagnostic, airport security imaging, military detection, atmospheric research, high-speed communication, the quality control of packaging product, agriculture psychrometrc analysis.Under the promotion of application demand, Terahertz science and technology makes great progress.Recent two decades comes, and the development of terahertz time-domain spectroscopic technology and quantum cascade laser, for the research of THz wave provides suitable light source and detection means, all has a great development terahertz sources and Detection Techniques.Terahertz intensity modulator is as a critical component handling terahertz signal transmission system, and its correlative study is significant to the further application of Terahertz Science and Technology.Because natural material is very faint to the electromagnetic response of terahertz wave band, be difficult to be applied to modulate THz wave, thereby compared to the develop rapidly of terahertz sources and Detection Techniques, Terahertz modulation technique but seems and makes slow progress.The terahertz filter needing in THz wave transmitting procedure, modulator, the research of the various function elements such as switch is still comparatively weak.
Existing existing Terahertz intensity modulator mainly contains two kinds, automatically controlled modulator and light-operated modulator.Based on semiconductors such as silicon, all there is more shortcoming in the automatically controlled and light-operated Terahertz intensity modulators such as phase-change material such as vanadium dioxide at present.As: the resonant tank of (1) automatically controlled Terahertz intensity modulator has larger electric capacity and resistance in series, and logical electric discharge needs the regular hour to postpone, and causes the modulating speed of its modulator relatively slow; And the upper and lower surface at automatically controlled terahertz wave modulator all needs conductive electrode (such as conductive silicon etc.) to realize automatically controlled modulator.Electrode has free electron, can absorb THz wave, thereby introduces insertion loss, affects Terahertz modulation efficiency; (2) the slow and photo-generated carrier life time long (being approximately Microsecond grade magnitude) of the migration rate of photo-generated carrier in silicon semiconductor and vanadium dioxide material, therefore, based on the automatically controlled and light-operated modulator of silicon semiconductor and vanadium dioxide material, limited the modulating speed of THz wave, made its modulating speed slow; (3) modulation band-width of the modulator such as silicon semiconductor and vanadium dioxide is narrow.In general, the modulating speed of existing Terahertz intensity modulator, modulation band-width all can not meet the requirement of Terahertz research, have much room for improvement
.
Utility model content
Technical problem to be solved in the utility model is: the modulating speed for current existing Terahertz intensity modulator is low, the problem that spectral range is narrow, the raising system scope of application, the utility model proposes a kind of complete light-operated Terahertz intensity modulator and Terahertz intensity modulator, by nanogold particle layer, strengthen the efficiency that graphene layer absorbs photon, improve the density of photo-generated carrier, and then strengthen the absorption to THz wave, the modulation effect of enhanced modulation device.
the technical solution adopted in the utility model is as follows:
A kind of complete light-operated Terahertz intensity modulator comprises:
THz wave generating means, for generation of THz wave;
Pump light wave generating device, for generation of pumping light wave;
Terahertz intensity modulator, photon for absorptive pumping light wave, produce photo-generated carrier, absorb subsequently for driving the THz wave of photo-generated carrier motion, photo-generated carrier is under THz wave electric field driven, with other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity; By regulating pump light wave intensity, regulate the concentration of graphene layer photo-generated carrier, finally modulate the output intensity of THz wave, wherein said Terahertz intensity modulator comprises:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier; Graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, and photo-generated carrier and other particle interactions by the consumption of THz wave electric field energy and be distributed in other particles, thereby are modulated Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
Described THz wave generating means comprises the Terahertz generator for generation of terahertz wave signal, and for focusing on the THz wave input regulator of Terahertz generator output THz wave energy, described THz wave input regulator carries out terahertz wave signal after energy focusing, described THz wave focus is positioned at graphene layer upper surface, and quartz substrate is positioned at graphene layer lower surface.
Described THz wave input regulator is Terahertz lens or paraboloidal mirror.
Described pump light wave generating device comprises the laser instrument for generation of pumping light wave, acousto-optic modulator for modulated pumping light frequency, and for by the pumping light wave regulator of the pumping light wave focus adjustment of acousto-optic modulator output, described laser instrument is connected with pumping light wave regulator light by acousto-optic modulator.
Described pumping light wave regulator is lens.
When pumping light wave overlaps with THz wave incident angle, THz wave and pumping light wave are all from the incident of Graphene upper surface, and described THz wave input regulator also comprises angle demodulator, and described incident angle refers to the angle that is incident to graphene layer.
When pumping light wave vertical incidence graphene layer, the THz wave of Terahertz generator output is perpendicular to pumping light wave, described angle demodulator is Terahertz regulator, when pumping light wave after Terahertz angle demodulator regulates is identical with THz wave incident angle, Terahertz angle demodulator is ITO catoptron; When THz wave vertical incidence graphene layer, the pumping light wave of laser instrument output is perpendicular to THz wave, described angle demodulator is pump light angle demodulator, when the pumping light wave after pump light angle demodulator regulates overlaps with THz wave, pump light angle demodulator is silicon chip, described Terahertz angle demodulator is the hereby regulator of ripple of transmission pumping light wave and reflected terahertz, and described pumping light wave regulator is transmission THz wave and the regulator of reflected pump light ripple.
A kind of complete light-operated Terahertz intensity modulator also comprises for surveying the THz wave sniffer of Terahertz intensity modulator output; Described THz wave sniffer comprises Terahertz output controller, terahertz detector, described Terahertz intensity modulator output THz wave is after Terahertz output controller focuses on, transfer to terahertz detector and carry out THz wave strength investigation, described Terahertz intensity modulator is connected with terahertz detector light by Terahertz output controller.
Comprise:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier, graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, photo-generated carrier and other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
Described quartz substrate layer thickness range 2-3mm; Nanogold particle layer diameter range 3nm-6nm.
in sum, owing to having adopted technique scheme, the beneficial effects of the utility model are:
1) Graphene that employing has high speed photoproduction carrier mobility, short carrier lifetime, wide spectrum is as modulator material; Adopt THz wave transmission coefficient high and can be by the light activated quartz of pumping as substrate; The pump light that simultaneously adopts acousto-optic modulator to control is modulated THz wave, thereby improves the modulating speed of modulator.
2) modulator of the present utility model is applicable to the intensity modulated of any THz source.
3) Terahertz intensity modulator of the present utility model has the advantages such as modulating speed is fast, modulation band-width is wide, be applicable to any THz source, the response time is short, and structure and modulator approach simple, be convenient to miniaturization and integrated.The utility model is applicable to the intensity modulated to THz wave in most Terahertz communication systems and Terahertz research field.
4) the input angle of THz wave and pumping light wave can be arbitrarily angled.
The plasma resonance of gold nano grain can make the surperficial quantum efficiency of graphene layer bring up to 1500%, thereby improve the absorption of graphene layer to the pump light photon of incident, thereby improve the density of photo-generated carrier, strengthen the absorption to THz wave, the modulation effect of enhanced modulation device.Quartz absorbs hardly THz wave and can not excited by pump light, as substrate, can not affect the modulating speed of Terahertz and modulation band-width.
Accompanying drawing explanation
the utility model will illustrate by example and with reference to the mode of accompanying drawing, wherein:
The structural representation of Fig. 1 Terahertz intensity modulator.
The principle schematic of Fig. 2 Terahertz intensity modulator.
The complete light-operated Terahertz intensity modulator embodiment of Fig. 3 mono-theory diagram.
The complete light-operated Terahertz intensity modulator embodiment of Fig. 4 bis-theory diagrams.
The complete light-operated Terahertz intensity modulator embodiment of Fig. 5 tri-theory diagrams.
Reference numeral
1-Terahertz generator 2-Terahertz lens 3-laser instrument 4-acousto-optic modulator
5-lens 6-Terahertz intensity modulator 7-Terahertz lens 8-terahertz detector
9-paraboloidal mirror 10-beam shaping device 11-ITO catoptron
61-nanogold particle layer 62-graphene layer 63-quartz substrate
Embodiment
Disclosed all features in this instructions, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.
Disclosed arbitrary feature in this instructions (comprising any accessory claim, summary and accompanying drawing), unless narration especially all can be replaced by other equivalences or the alternative features with similar object.That is,, unless narration especially, each feature is an example in a series of equivalences or similar characteristics.
The utility model related description:
1 Terahertz intensity modulator forms:
As shown in Figure 1, comprise nanogold particle layer, graphene layer, quartz substrate, described graphene layer upper surface has plated layer of gold nano particle.Because graphene layer is to the low absorption efficiency of visible ray (single-layer graphene only has 2.3% absorptivity), so improve the light absorption to pumping laser with gold nano grain in the utility model, thereby for graphene layer provides more photon, improve the density of photo-generated carrier, strengthen the absorption to THz wave.
2 Terahertz intensity modulator principle of work:
1) as shown in Figure 2, terahertz wave modulator is subject to pumping light wave 22 irradiation, and the free electron in nanogold particle layer is with the pumping light wave generation coupled resonance of incident.Nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer, improve the efficiency of light absorption of graphene layer.
2) graphene layer absorbs the photoproduction that nanogold particle layer transmits, the photon that graphene layer absorptive pumping light produces simultaneously, photon excitation graphene layer produces photo-generated carrier, graphene layer receives the THz wave 21 that drives photo-generated carrier motion subsequently, under THz wave electric field driven, move, photo-generated carrier by with other particle interactions (such as scattering, collision etc.) by the consumption of THz wave electric field energy and be distributed in other particles, this process causes THz wave remitted its fury after the terahertz wave modulator being stimulated to be absorbed.Therefore, the approximate absorbed Terahertz wave intensity of thinking is proportional to photo-generated carrier density.THz wave is remitted its fury after the terahertz wave modulator being stimulated, and regulates the energy intensity of pump light can regulate graphene layer photoproduction carrier concentration, thereby controls output THz wave 23 intensity.
Wherein THz wave impinges perpendicularly in Terahertz intensity modulator, the focus of THz wave is positioned at graphene layer upper surface (because nanogold particle diameter range 3nm-6nm, be very thin one deck, it can be also nanogold particle layer surface that the focus of actual THz wave is positioned at).
3 complete light-operated Terahertz intensity modulator principle of work:
1) by THz wave generator, produce THz wave, through THz wave angle demodulator, THz wave is adjusted on graphene layer, adopt after acousto-optic modulator modulation, passing through pump light wave angle degree: regulator is sent to pump light on THz wave regulator (comprising nanogold particle layer, graphene layer, quartz substrate), terahertz wave modulator is subject to pump light amplitude photograph, and the free electron in nanogold particle layer is with the pumping light wave generation coupled resonance of incident.Nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer, improve the efficiency of light absorption of graphene layer.
2) graphene layer absorbs the photon that nanogold particle layer transmits, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier, graphene layer receives the THz wave that drives photo-generated carrier motion subsequently, photo-generated carrier is under THz wave electric field driven, by the consumption of THz wave electric field energy and be distributed in other particles, this process causes THz wave remitted its fury after the terahertz wave modulator being stimulated to be absorbed with other particle interactions (such as scattering, collision etc.).Therefore, the approximate absorbed Terahertz wave intensity of thinking is proportional to photo-generated carrier density.THz wave is remitted its fury after the terahertz wave modulator being stimulated, and regulates the energy intensity of pump light can regulate graphene layer photoproduction carrier concentration, thereby controls the degree of modulation of THz wave intensity.
Wherein THz wave impinges perpendicularly in Terahertz intensity modulator, the focus of THz wave is positioned at graphene layer upper surface (because nanogold particle diameter range 3nm-6nm, be very thin one deck, it can be also nanogold particle layer surface that the focus of actual THz wave is positioned at).
4 graphene layers are that Graphene adopts chemical gaseous phase deposition (deposition) method (as CVD method) to generate.
5 nanogold particle layers are to consist of nanogold particle.
6 quartz substrate thickness range 2-3mm.
7 other particles refer to free electron, surface plasma excimer, exciton, infrared phonon, polaron, polariton.
8 when THz wave and pumping light wave are during simultaneously from the incident of graphene layer upper surface, and THz wave radius is less than pumping light wave radius, THz wave and pumping light wave center superposition.When THz wave and pump light wavelength-division be not during from graphene layer upper surface and the incident of quartz substrate bottom surface, THz wave and pumping light wave center superposition.
9 lens are used for focal pumping light wave, can not be used for focusing on THz wave, and Terahertz lens are used for focusing on THz wave.
10 Terahertz output controllers are Terahertz lens or paraboloidal mirror.
The effect of 11 Terahertz generating meanss is generation THz wave, focuses on, and THz wave is incident on graphene layer upper surface.The effect of pump light wave apparatus is generation pumping light wave, focuses on, and pumping light wave is incident on graphene layer surface, and the effect of THz wave sniffer is for detection of the Terahertz wave intensity by after being adjusted to.Embodiment 12 to 17 is several embodiment of THz wave generator, pump light wave producer and THz wave sniffer just, have more kinds of combinations can explanation in reality.
12 nanogold particle layer production method: metallic film sputters in silicon/silicon dioxide substrate by thermal anneal process method (350 ℃, control environment down, 15 minutes), obtains the nanogold particle of high-density single layer.
13 nanogold particle layers be attached to Graphene layer by layer the process of upper surface be:
1) by the method for rotation, polymethylmethacrylate (PMMA) is wrapped up to gold nano grain uniformly, form PMMA/ gold nano grain film;
2) PMMA/ nanogold particle layer film is moved on to the graphene layer upper surface passing through, with deionized water, repeatedly rinse, PMMA is dissolved, gold nano grain is evenly stayed graphene layer upper surface.
Embodiment mono-: a kind of complete light-operated Terahertz intensity modulator comprises:
THz wave generating means, for generation of THz wave;
Pump light wave generating device, for generation of pumping light wave;
Terahertz intensity modulator, photon for absorptive pumping light wave, produce photo-generated carrier, absorb subsequently for driving the THz wave of photo-generated carrier motion, photo-generated carrier is under THz wave electric field driven, with other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity; By regulating pump light wave intensity, regulate the concentration of graphene layer photo-generated carrier, finally modulate the output intensity of THz wave, wherein said Terahertz intensity modulator comprises:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier; Graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, and photo-generated carrier and other particle interactions by the consumption of THz wave electric field energy and be distributed in other particles, thereby are modulated Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
Embodiment bis-: on embodiment mono-basis, described THz wave generating means comprises the Terahertz generator for generation of terahertz wave signal, and for focusing on the THz wave input regulator of Terahertz generator output THz wave energy, described THz wave input regulator carries out terahertz wave signal after energy focusing, described THz wave focus is positioned at graphene layer upper surface, and quartz substrate is positioned at graphene layer lower surface.
Embodiment tri-: on embodiment bis-bases, described THz wave input angle demodulator is Terahertz lens or paraboloidal mirror.
Embodiment tetra-: on embodiment bis-or three bases, described pump light wave generating device comprises the laser instrument for generation of pumping light wave, acousto-optic modulator for modulated pumping light frequency, and for by the pumping light wave regulator of the pumping light wave focus adjustment of acousto-optic modulator output, described laser instrument is connected with pumping light wave regulator light by acousto-optic modulator.
Embodiment five: on embodiment tetra-bases, described pumping light wave regulator is lens or ITO catoptron.
Embodiment six: on embodiment five bases, it is described when pumping light wave overlaps with THz wave incident angle, THz wave and pumping light wave are all from the incident of Graphene upper surface, described THz wave input regulator also comprises angle demodulator, and described incident angle refers to the angle that is incident to graphene layer.
Embodiment seven: on embodiment six bases, described when pumping light wave vertical incidence graphene layer, the THz wave of Terahertz generator output is perpendicular to pumping light wave, described angle demodulator is Terahertz regulator, when pumping light wave after Terahertz angle demodulator regulates is identical with THz wave incident angle, Terahertz angle demodulator is ITO catoptron; When THz wave vertical incidence graphene layer, the pumping light wave of laser instrument output is perpendicular to THz wave, described angle demodulator is pump light angle demodulator, when the pumping light wave after pump light angle demodulator regulates overlaps with THz wave, pump light angle demodulator is silicon chip, described Terahertz angle demodulator is the hereby regulator of ripple of transmission pumping light wave and reflected terahertz, and described pumping light wave regulator is transmission THz wave and the regulator of reflected pump light ripple.
Embodiment eight: on one of embodiment mono-to seven basis, a kind of complete light-operated Terahertz intensity modulator also comprises for surveying the THz wave sniffer of Terahertz intensity modulator output; Described THz wave sniffer comprises Terahertz output controller, terahertz detector, described Terahertz intensity modulator output THz wave is after Terahertz output controller focuses on, transfer to terahertz detector and carry out THz wave strength investigation, described Terahertz intensity modulator is connected with terahertz detector light by Terahertz output controller.
Embodiment nine: on embodiment eight bases, Terahertz output controller is identical with Terahertz input regulator.
Embodiment ten: on embodiment nine bases, described THz wave output controller is Terahertz lens or paraboloidal mirror and other similar device replacements.
Embodiment 11: a kind of Terahertz intensity modulator comprises:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier, graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, photo-generated carrier and other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
Embodiment 12: on one of embodiment mono-to 11 basis, described pumping light wave and THz wave incident angle angle are arbitrarily angled.When THz wave and pump light wavelength-division be not from Terahertz intensity modulator nanogold particle layer upper surface or during the incident of quartz substrate bottom face, between THz wave and pumping light wave, angle is obtuse angle (not doing extended line).
Embodiment 13: on embodiment dodecyl plinth, and described quartz substrate thickness range 2-3mm; Nanogold particle diameter range 3nm-6nm.
Embodiment 14: as shown in Figure 3, a kind of complete light-operated Terahertz intensity modulator comprises Terahertz generating means, pump light wave apparatus, THz wave sniffer.Described Terahertz generating means comprises Terahertz generator and Terahertz input regulator; Described pump light wave generating device comprises laser instrument (certainly can produce the device of pumping light wave with other), acousto-optic modulator and pump light wave modulator; Described THz wave sniffer comprises terahertz wave detector and THz wave output controller.Terahertz input regulator is Terahertz lens 2, and Terahertz output controller is Terahertz lens 7, and Terahertz lens 7 are the same with Terahertz lens.Pumping light wave regulator comprises that lens 5(replaces with ITO catoptron or other types device).In this device, THz wave does not overlap with pumping light wave incident angle.
Embodiment 15: as shown in Figure 4, a kind of complete light-operated Terahertz intensity modulator comprises Terahertz generating means, pump light wave apparatus, THz wave sniffer.Described Terahertz generating means comprises Terahertz generator and Terahertz input regulator; Described pump light wave generating device comprises laser instrument (certainly can produce the device of pumping light wave with other), acousto-optic modulator and pumping light wave regulator; Described THz wave sniffer comprises terahertz wave detector and THz wave output controller, and Terahertz input regulator is paraboloidal mirror 2, and Terahertz output controller is paraboloidal mirror 7, and Terahertz lens 7 are the same with Terahertz lens.Pumping light wave regulator comprises that lens 5(replaces with ITO catoptron or other types device).In this device, THz wave does not overlap with pumping light wave incident angle.Paraboloidal mirror 7 is identical with paraboloidal mirror 2 parameters.
Embodiment 16: as shown in Figure 5, a kind of complete light-operated Terahertz intensity modulator comprises Terahertz generating means, pump light wave generating device, Terahertz intensity modulator and THz wave sniffer.Described Terahertz generating means comprises Terahertz generator, Terahertz angle demodulator and Terahertz input regulator; Described pump light wave generating device comprises laser instrument (certainly can produce the device of pumping light wave with other), acousto-optic modulator and beam shaping element; Described THz wave sniffer comprises terahertz wave detector and THz wave output controller, and Terahertz input regulator is Terahertz lens (replacing with paraboloidal mirror), and Terahertz output controller is Terahertz lens (replacing with paraboloidal mirror).THz wave overlaps with pumping light wave incident angle.Pumping light wave vertical incidence graphene layer, the THz wave of Terahertz generator output is during perpendicular to pumping light wave, and when pumping light wave after Terahertz angle demodulator regulates is identical with THz wave incident angle, Terahertz angle demodulator is ITO catoptron.
Embodiment 17: on embodiment hexadecyl plinth, between acousto-optic modulator and ITO catoptron, add lens.As long as guarantee that pump light hot spot is greater than THz wave hot spot.
Embodiment 18: on embodiment 16 or heptadecyl plinth, if THz wave vertical incidence Graphene is surperficial, the pumping light wave of laser instrument output is perpendicular to THz wave, when the pumping light wave after Terahertz angle demodulator regulates overlaps with THz wave, pump light angle demodulator is silicon chip, wherein the saturating THz wave of silicon chip (just absorbing the THz wave of small part) and reflected pump light ripple.Silicon chip is intrinsic silicon.
Embodiment 19: on one of embodiment mono-to 18 basis, also can between laser instrument and acousto-optic modulator, add beam shaping device, light beam is carried out to shaping, make the even incident of hot spot.
The utility model is not limited to aforesaid embodiment.The utility model expands to any new feature or any new combination disclosing in this manual, and the arbitrary new method disclosing or step or any new combination of process.
Claims (10)
1. a complete light-operated Terahertz intensity modulator, is characterized in that comprising:
THz wave generating means, for generation of THz wave;
Pump light wave generating device, for generation of pumping light wave;
Terahertz intensity modulator, photon for absorptive pumping light wave, produce photo-generated carrier, absorb subsequently for driving the THz wave of photo-generated carrier motion, photo-generated carrier is under THz wave electric field driven, with other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity; By regulating pump light wave intensity, regulate the concentration of graphene layer photo-generated carrier, finally modulate the output intensity of THz wave, wherein said Terahertz intensity modulator comprises:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier; Graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, and photo-generated carrier and other particle interactions by the consumption of THz wave electric field energy and be distributed in other particles, thereby are modulated Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
2. a kind of complete light-operated Terahertz intensity modulator according to claim 1, it is characterized in that described THz wave generating means comprises the Terahertz generator for generation of terahertz wave signal, and for focusing on the THz wave input regulator of Terahertz generator output THz wave energy, described THz wave input regulator carries out terahertz wave signal after energy focusing, described THz wave focus is positioned at graphene layer upper surface, and quartz substrate is positioned at graphene layer lower surface.
3. a kind of complete light-operated Terahertz intensity modulator according to claim 2, is characterized in that described THz wave input regulator is Terahertz lens or paraboloidal mirror.
4. a kind of complete light-operated Terahertz intensity modulator according to claim 1, it is characterized in that described pump light wave generating device comprises the laser instrument for generation of pumping light wave, acousto-optic modulator for modulated pumping light frequency, and for by the pumping light wave regulator of the pumping light wave focus adjustment of acousto-optic modulator output, described laser instrument is connected with pumping light wave regulator light by acousto-optic modulator.
5. a kind of complete light-operated Terahertz intensity modulator according to claim 4, is characterized in that described pumping light wave regulator is lens.
6. a kind of complete light-operated Terahertz intensity modulator according to claim 4, it is characterized in that when pumping light wave overlaps with THz wave incident angle, THz wave and pumping light wave are all from the incident of Graphene upper surface, described THz wave input regulator also comprises angle demodulator, and described incident angle refers to the angle that is incident to graphene layer.
7. a kind of complete light-operated Terahertz intensity modulator according to claim 6, it is characterized in that when pumping light wave vertical incidence graphene layer, the THz wave of Terahertz generator output is perpendicular to pumping light wave, described angle demodulator is Terahertz regulator, when pumping light wave after Terahertz angle demodulator regulates is identical with THz wave incident angle, Terahertz angle demodulator is ITO catoptron; When THz wave vertical incidence graphene layer, the pumping light wave of laser instrument output is perpendicular to THz wave, described angle demodulator is pump light angle demodulator, when the pumping light wave after pump light angle demodulator regulates overlaps with THz wave, pump light angle demodulator is silicon chip, described Terahertz angle demodulator is the hereby regulator of ripple of transmission pumping light wave and reflected terahertz, and described pumping light wave regulator is transmission THz wave and the regulator of reflected pump light ripple.
8. according to a kind of complete light-operated Terahertz intensity modulator one of claim 1 to 7 Suo Shu, characterized by further comprising for surveying the THz wave sniffer of Terahertz intensity modulator output; Described THz wave sniffer comprises Terahertz output controller, terahertz detector, described Terahertz intensity modulator output THz wave is after Terahertz output controller focuses on, transfer to terahertz detector and carry out THz wave strength investigation, described Terahertz intensity modulator is connected with terahertz detector light by Terahertz output controller.
9. a Terahertz intensity modulator, is characterized in that comprising:
Nanogold particle layer, for absorptive pumping light wave, the pumping light wave of the free electron in nanogold particle layer and incident produces plasma resonance, nanogold particle layer by plasma resonance by the photon transfer of pumping light wave to graphene layer;
Graphene layer, the photon transmitting for absorbing nanogold particle layer, the photon that graphene layer absorptive pumping light produces simultaneously, described photon excitation graphene layer produces photo-generated carrier, graphene layer receives THz wave subsequently, and photo-generated carrier moves under THz wave electric field driven, photo-generated carrier and other particle interactions, by the consumption of THz wave electric field energy and be distributed in other particles, thus modulation Terahertz wave intensity;
Quartz substrate, for the substrate of graphene layer.
10. a kind of Terahertz intensity modulator according to claim 9, is characterized in that described quartz substrate layer thickness range 2-3mm; Nanogold particle layer diameter range 3nm-6nm.
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| CN103487953A (en) * | 2013-08-20 | 2014-01-01 | 中国工程物理研究院流体物理研究所 | All-optically controlled terahertz intensity modulator and terahertz intensity modulator |
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| CN103487953A (en) * | 2013-08-20 | 2014-01-01 | 中国工程物理研究院流体物理研究所 | All-optically controlled terahertz intensity modulator and terahertz intensity modulator |
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| CN106526902A (en) * | 2016-11-15 | 2017-03-22 | 北京交通大学 | Light space ultrafast modulator based on graphene micro optical fiber |
| CN109489815A (en) * | 2018-03-13 | 2019-03-19 | 电子科技大学 | Light-operated flexible semiconductor THz wave spatial modulator |
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