WO2016013898A1 - High-efficiency terahertz transceiver enabling frequency modulation - Google Patents

Abstract

The present invention relates to a high-efficiency THz receiver enabling frequency modulation. The high-efficiency THz receiver enabling frequency modulation according to the present invention comprises: an active layer; a photoconductive antenna positioned on the upper section of one side of the active layer; a nano grating antenna (NGA) formed on the photoconductive antenna; a semiconductor substrate positioned on the lower section of the other side of the active layer; and a surface plasmon coupler (SPC) positioned on the boundary surface between the substrate upper surface and the active layer, wherein the active layer is formed as an indium gallium arsenide (InGaAs) thin film or a dissimilar laminated thin film comprising an InGaAs/InAlAs multi-quantum well (MQW) layer, and the photoconductive antenna comprises: a parallel metal transmission line which extends in parallel at a certain length; central protrusions which protrude symmetrically so as to face inwardly at the central area of the parallel metal transmission line; and electrode pads which extend symmetrically on both ends of the parallel metal transmission line. The NGA is positioned on the central protrusions of the photoconductive antenna, and may have at least one pattern patterned and consecutively arranged thereon. The SPC may be positioned on the lower surface of the active layer, may have a plurality of patterns formed thereon by being periodically patterned so as to form a concentric circle, may have other forms of patterns, and may be formed of a metallic material. In addition, the high-efficiency THz receiver enabling frequency modulation according to the present invention is configured so as to be applied to a THz-wave receiver (Tx) or receiver (Rx) comprising discrete devices, or to be applied to a THz transceiver for generating and detecting a THz wave using a single photoconductive antenna on a single substrate and to be applied to a Tx and a Rx which are spaced at certain intervals and integrated on the single substrate, thereby being capable of transmitting and detecting the THz wave within the discrete devices or a single device. Due to said configuration, the high-efficiency THz receiver enabling frequency modulation according to the present invention can increase THz-wave generation and output and measurement sensitivity by integrating the NGA and the SPC. Simultaneously, the high-efficiency THz receiver is configured such that frequency can be modulated while the THz wave generated at a certain bandwidth passes through a surface plasmon resonance structure, thereby being able to have frequency selectivity.

Description

High-Efficiency Terahertz Transceiver with Frequency Modulation

The present invention relates to a high-efficiency terahertz (THz) transceiver capable of frequency modulation, and more particularly, to integrate a nano grating antenna (NGA) and a surface plasmon coupler (SPC). The present invention relates to a high-efficiency THz transceiver capable of modulating the frequency and modulating the frequency and output power of the THz wave.

The terahertz wave (THz) is an electromagnetic wave with a frequency range from 100 GHz to 10 THz between infrared and microwave.It is recognized as a radio wave resource of the future thanks to the development of advanced technology, and it is gaining more and more attention worldwide. ) And its importance in various applications through convergence with BT (Bio Technology).

In particular, THz waves go straight like visible light and penetrate various materials like radio waves, so they are used for the detection of counterfeit bills, drugs, explosives, biochemical weapons, as well as basic sciences such as physics, chemistry, biology and medicine. The structure can be inspected nondestructively, so it is expected to be widely used in general industry, defense, security and so on. In addition, THz technology is expected to be widely used in wireless communication, high-speed data processing, and inter-satellite communication of 40 Gbit / s or more in the information communication field.

On the other hand, using the THz time-domain spectroscopy (TDS), many techniques for measuring the spectral characteristics of the sample in the THz wave frequency domain has been developed. Among them, research on the generation of THz wave and the measurement device is being actively conducted. In particular, the conventional photoconductive antenna has higher output than other THz wave generation and measurement elements, and the desired electromagnetic characteristics using micro process technology It is easy to tune to have the advantage of being widely used in a large number of THz wave spectroscopy, and research on it is also active.

The principle of the THz wave generation of the photoconductive antenna for THz wave is that the photoelectron excited by the femtosecond (fs: ^10-15 seconds) laser pulse incident on the substrate is accelerated along the potential difference between the drive electrodes. The THz wave is radiated to the opposite side of the surface. On the other hand, when measuring the THz wave using a photoconductive antenna, the potential difference is not generated at the driving electrode, and the current generated as the photoelectron excited by the femtosecond laser pulse is accelerated by the THz wave incident through the opposite side of the driving electrode is measured. The THz wave is measured by this.

On the other hand, in the THz wave spectroscopy and the image acquisition, the output of the generating element and the sensitivity of the measuring element are very important parameters, and there is a continuous demand for technology development of a device having high output and high sensitivity. In addition, there is a demand for the development of high efficiency THz generation and detection devices with high functions such as frequency modulation for applications in various fields of THz wave technology. In addition, the conventional THz wave transceiver is configured to generate or detect a THz wave as a separate element in which a transmitter (Tx) and a receiver (Rx) equipped with each photoconductive antenna are configured to provide a system standard. This becomes large and there is a problem that there is a limitation in miniaturization and application of the device.

[Preceding technical literature]

[Patent Documents]

(Patent Document 1) Domestic Patent No. 10-1382258 (registered April 01, 2014)

(Patent Document 2) Domestic Patent No. 10-0952050 (registered on April 01, 2010)

(Patent Document 3) Domestic Patent No. 10-1337091 (November 28, 2012 registration)

The present invention integrates a nanolattice antenna (NGA) and surface plasmon coupler (SPC) to increase the output power and measurement sensitivity of the THz wave, and at the same time the THz wave generated with a constant bandwidth passes through the surface plasmon resonance structure. The present invention provides a high-efficiency THz transceiver capable of modulating frequency that can be modulated by configuring it to be modulated.

In addition, the present invention can be applied to a THz wave transmitter (Tx) or a receiver (Rx) composed of individual elements, or configured to be applied to the THz wave Tx and Rx integrated on a single substrate, so that THz in an individual element or a single element To provide a high-efficiency THz transceiver capable of frequency modulation to transmit and detect waves.

In addition, the present invention is to provide a high-efficiency THz transceiver capable of frequency modulation that can be safely used even when applied to medical equipment that is intended for the human body.

Various problems to be solved by the present invention are not limited to the above-mentioned problems, and other tasks not mentioned will be clearly understood by those skilled in the art from the following description.

High-efficiency THz transceiver capable of frequency modulation according to the present invention, the active layer (active layer); A photoconductive antenna positioned above one side of the active layer; A nanolattice antenna (NGA) formed on the photoconductive antenna; A semiconductor substrate located below the other side of the active layer; And a surface plasmon bonder (SPC) positioned at an interface between the upper surface of the substrate and the active layer, wherein the active layer is indium gallium arsenide (InGaAs) homolayer or InGaAs / indium aluminum arsenide (Indium Aluminum Arsenide). Arsenide: InAlAs) It is formed of a hetero-layer thin film including a multi quantum well layer (MQW layer), and the photoconductive antenna includes: a metal parallel transmission line extending in parallel with a predetermined length; A central projection protruding symmetrically to face inward from a central region of the metal parallel transmission line; And electrode pads symmetrically extending at both ends of the metal parallel transmission line.

The NGA may be located at the central protrusion of the photoconductive antenna, and at least one or more patterns may be patterned and continuously arranged.

The substrate may be formed of an insulator or semi-insulating semiconductor substrate.

The SPC may be located on the bottom surface of the active layer.

The SPC may be formed by periodically patterning a plurality of patterns to form concentric circles, may be in other forms, and may be formed of a metal material.

In addition, the high-efficiency THz transceiver capable of frequency modulation according to the present invention, the active layer; A transmitter (Tx) positioned on the active layer and transmitting THz waves; A receiver (Rx) positioned at a predetermined distance from the Tx and detecting a THz wave formed in the low temperature growth active layer on the active layer; An NGA located on the Rx; A substrate located below the other side of the active layer; And an SPC positioned at an interface between the upper surface of the substrate and the active layer, wherein the active layer is formed of an InGaAs thin film or an MQW of InGaAs / InAlAs, wherein Rx comprises: a low temperature growth active layer; And a photoconductive antenna formed on the low temperature growth active layer, wherein the photoconductive antenna comprises: a metal parallel transmission line extending in parallel with a predetermined length; A central projection protruding symmetrically to face inward from a central region of the metal parallel transmission line; And electrode pads symmetrically extending at both ends of the metal parallel transmission line.

The low temperature growth active layer may be composed of a low temperature grown InGaAs thin film or InGaAs / InAlAs MQW.

The NGA may be positioned in the central protrusion of the photoconductive antenna of Rx, and at least one or more patterns may be patterned and continuously arranged.

The substrate may be formed of an insulator or semi-insulating semiconductor substrate.

The SPC may be located on the bottom surface of the active layer.

The SPC may be formed by periodically patterning a plurality of patterns to form concentric circles, may be in other forms, and may be formed of a metal material.

The high-efficiency THz transceiver capable of frequency modulation according to the present invention integrates a nanolattice antenna (NGA) and a surface plasmon coupler (SPC) to increase the generation output and measurement sensitivity of the THz wave while simultaneously generating a THz wave with a constant bandwidth. By allowing the frequency to be modulated while passing through the surface plasmon resonance structure, it is possible to have frequency selectivity.

In addition, the high-efficiency THz transceiver capable of frequency modulation according to the present invention is applied to a THz wave transmitter (Tx) or a receiver (Rx) composed of individual elements, or to a THz transceiver for generating and detecting THz waves with one photoconductive antenna. And it can be applied to the THz wave Tx and Rx integrated on a single substrate, there is an effect that can transmit and detect the THz wave in the individual element or a single element.

In addition, the high-efficiency THz transceiver capable of frequency modulation according to the present invention has an effect that can be used safely even when applied to medical equipment to be targeted to the human body.

It will be fully understood that embodiments of the inventive concept may provide various effects that are not specifically mentioned.

1 is a cross-sectional view of a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention.

FIG. 2 is a view from above of a substrate in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the inventive concept;

3 is a view from below of a substrate in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention;

4 and 5 are enlarged views of a nanolattice antenna (NGA) in the high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention.

6 is a view for explaining an example of the surface plasmon coupler (SPC) in the high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention.

7 is a view showing another modification of the formation position of the SPC in the high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention.

8 is a perspective view illustrating a high efficiency THz transceiver capable of frequency modulation according to a second embodiment of the present invention.

9 is a view showing another modification of the formation position of the SPC in the high-efficiency THz transceiver capable of frequency modulation according to the second embodiment of the technical concept of the present invention.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the present invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

The terms top, bottom, top, bottom, or top, bottom, etc. are used to distinguish relative positions in the component. For example, in the case of naming the upper part on the drawing as the upper part and the lower part on the drawing for convenience, the upper part may be called the lower part and the lower part may be named the upper part without departing from the scope of the present invention. .

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

Hereinafter, exemplary embodiments of a high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a high efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention, and FIG. 2 is a substrate in a high efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention. 3 is a view seen from the bottom of the substrate in a high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention, and FIG. 4 and FIG. 5 are a first view of the present invention. An enlarged view of a portion of a nano-lattice antenna (NGA) in a high-efficiency THz transceiver capable of frequency modulation according to an embodiment, Figure 6 is a surface plasmon in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention FIG. 7 is a diagram illustrating an example of a combiner (SPC), and FIG. 7 is a frequency modulation according to a first embodiment of the inventive concept. The available high efficiency THz transceiver is a view showing another modified example of the positions of formation of the surface plasmon combiner (SPC).

The high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the present invention is configured to increase the generation output and measurement sensitivity of the THz wave, and the NGA 300 and the SPC 500 are provided to generate the THz wave. This is an apparatus with increased sensitivity and sensitivity and frequency can be modulated.

1 to 6, the high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the technical concept of the present invention includes an active layer, a photoconductive antenna 200 positioned on one side of the active layer, and the photoconductive antenna NGA (300) formed on the (200), the substrate 400 is located on the other lower side of the substrate and the SPC (500) located on the upper surface of the substrate 400.

The active layer 100 may be formed of an InGaAs thin film or an InGaAs / InAlAs MQW, and the photoconductive antenna 200 may be positioned at one upper part and a substrate 400 at another lower part. The substrate 400 may be an insulating or semi-insulating (SI) semiconductor substrate 400. The substrate 400 may be formed of a GaAs material including semi-insulating gallium arsenide (SI-GaAs) or low-temperature growth gallium arsenide (LTG-GaAs), or may be formed of a material such as indium phosphide (InP).

The photoconductive antenna 200 may be positioned above one side of the active layer 100 and may be provided to generate or measure a THz wave. The photoconductive antenna 200 may be configured to protrude upward.

The photoconductive antenna 200 includes a metal parallel transmission line 220 extending in parallel to a predetermined length, a central projection 230 protruding symmetrically to face inward in a central region of the metal parallel transmission line 220, and It may include an electrode pad 210 is formed symmetrically extending at both ends of the metal parallel transmission line 220.

Here, the central protrusion 230 protruding in the central region of the metal parallel transmission line 220 acts as a dipole antenna. In addition, the electrode pad 210 extending at both ends of the metal parallel transmission line 220 may be connected to a signal line for electrical connection with an external device.

The NGA 300 is formed on the photoconductive antenna 200, and may be formed in a nano-sized lattice structure so that pulses of the femtosecond laser 50 may be easily transmitted and a high-efficiency photoconductive phenomenon may appear. have.

When a laser pulse is incident on the NGA 300 formed on the photoconductive antenna 200, the laser is generated such that THz waves of greater intensity are generated as compared with the photoconductive antenna 200 without the NGA 300. The degree of pulse transmission is increased and high efficiency photoconductive phenomena can occur. The NGA 300 may be positioned in the central protrusion 230 of the photoconductive antenna 200, and at least one grating may be patterned and continuously arranged.

In one embodiment according to the present invention, the NGA 300 has a structure in which a plurality of fine nanolattices 310 forms stripes. The shape, position, and number of the NGA 300 may be a femtosecond laser ( It may have a variety according to the wavelength range of 50), it may be formed to have a variety of shapes depending on the position on the photoconductive antenna (200).

The NGA 300 forms a nanolattice 310 smaller than the wavelength of the incident femtosecond laser 50, so that surface plasmon resonance occurs when the femtosecond laser 50 is incident, and uses the same. Therefore, the transmission degree of the incident femtosecond laser 50 is increased. As a result, the amount of photoelectrons excited is increased, so that the generation power and measurement sensitivity of the THz wave can be improved.

The SPC 500 may be located at an upper surface of the substrate 400, that is, at an interface between the active layer 100 and the substrate 400. The SPC 500 may be provided to modulate the frequency of the THz wave passing through the SPC 500. The SPC 500 may be formed by periodically patterning a plurality of patterns to form concentric circles, and may be formed of a metal material.

In the present invention, when the THz wave generated in the NGA 300 passes through the SPC 500 of the metal structure having a period, only the frequency having a constant relationship with the metal period is combined to pass through the SPC 500. As a result, the THz wave passing through the SPC 500 may be output in a state in which a specific frequency is modulated high.

The laser pulses incident through the NGA 300 and absorbed by the active layer 100 generate THz waves with increased intensity, and when the generated THz waves satisfy certain conditions in the SPC 500, surface plasmon resonance phenomenon. This occurs and can only transmit frequencies corresponding to the metal pattern period. As a result, frequency selectivity can be realized by transmitting only THz waves of frequencies related to the metal pattern period.

In the first embodiment of the technical concept of the present invention, the SPC 500 is formed by periodically patterning a plurality of patterns to form concentric circles, but is not necessarily limited thereto.

In addition, in the first embodiment of the technical concept of the present invention, the SPC 500 is formed on the upper surface of the substrate 400 as an example, but the formation position of the SPC 500 may be variously modified. .

As shown in FIG. 7, the SPC 500 is disposed on the lower surface of the substrate 400, and the THz wave generated in the active layer 100 by the laser pulse incident through the NGA 300 is transferred to the substrate ( It is also possible to change the formation position of the SPC 500 so as to enter the SPC after passing through 400.

8 is a perspective view illustrating a high efficiency THz transceiver capable of frequency modulation according to a second embodiment of the present invention.

The high-efficiency THz transceiver capable of frequency modulation according to the second embodiment of the present invention may be applied to a single device in which a transmitter (Tx) 150 and a receiver (Rx) 180 are integrated. Compared to the first embodiment will be described with respect to the modified portion.

In addition, in the second embodiment of the inventive concept, the same reference numerals as the first embodiment may refer to the same components.

According to a second embodiment of the present invention, a highly efficient THz transceiver capable of frequency modulation may include an active layer 100, a Tx 150 and an Rx 180 formed on the active layer 100, and the photoconductive antenna 200. An NGA 300 formed on the substrate 400 includes a substrate 400 positioned under the other side of the active layer 100, and an SPC 500 positioned at an interface between the substrate 400 and the active layer 100.

Tx 150 and Rx 180 may be positioned on one side of the active layer 100 in a subsequent process, and the substrate 400 may be positioned on the other side of the bottom of the active layer 100. The substrate 400 may be an insulating or semi-insulating semiconductor substrate 400. The substrate 400 may be formed of a GaAS material including SI-GaAs or LTG-GaAs, or may be formed of a material such as InP.

In the second embodiment of the inventive concept, the active layer 100 may be formed of an InGaAs thin film or an InGaAs / InAlAs MQW.

The Tx 150 may be positioned on the active layer 100 and provided to transmit THz waves. The Tx 150 is formed of a metal line having a constant thickness and a line width, and may be formed of titanium or gold.

In a second embodiment of the inventive concept, the line width of the metal line of the Tx 150 (that is, the line width of the Tx 150 based on a direction parallel to the active layer 100) is 10 to 300. Can be. In addition, the thickness of the metal line of the Tx 150 (that is, the thickness of the Tx 150 based on the direction perpendicular to the active layer 100) may be 100 nm to 500 nm for Au and 10 nm to 50 nm for Ti. Can be.

The transmitter 150 is formed for the purpose of generating THz waves using a photo-ember (p-D) effect.

The Rx 180 is located on the low temperature growth active layer 190 formed on the active layer 100 and is located at one side spaced apart from the transmitter 150 by a second embodiment of the technical idea of the present invention. According to the high-efficiency THz transceiver can be provided to detect the THz wave.

For example, the Tx 150 and the Rx 180 may be configured such that horizontal distances are spaced by a predetermined interval. The Rx 180 may include a low temperature growth active layer 190 formed on the active layer 100 and a photoconductive antenna 200 positioned on the low temperature growth active layer 190.

The low temperature growth active layer 190 may be formed of an LTG InGaAs thin film or InGaAs / InAlAs MQW stacked on the active layer 100.

The photoconductive antenna 200 may be provided to detect the THz wave transmitted to the THz transceiver capable of frequency modulation according to the second embodiment of the present invention and may be formed to protrude upward.

The photoconductive antenna 200 includes a metal parallel transmission line 220 extending in parallel to a predetermined length, a central projection 230 protruding symmetrically to face inward in a central region of the metal parallel transmission line 220, and It may include an electrode pad 210 is formed symmetrically extending at both ends of the metal parallel transmission line 220.

Here, the central protrusion 230 protruding in the central region of the metal parallel transmission line 220 serves as a dipole antenna. In addition, the electrode pad 210 extending at both ends of the metal parallel transmission line 220 may be connected to a signal line for electrical connection with an external device.

The NGA 300 may be formed on the photoconductive antenna 200 and may have a lattice structure of a nano size to increase the transmission degree of the femtosecond laser 50 and to exhibit a high efficiency photoconductive phenomenon. have.

That is, when the laser pulse is incident on the NGA 300 formed on the photoconductive antenna 200, the NGA 300 is more sensitive than the photoconductive antenna 200 without the NGA 300. It can play a role in detecting THz waves.

The configuration of the nano-lattice antenna 300 is described in detail in the first embodiment of the technical idea of the present invention, a detailed description thereof will be omitted.

The substrate 400 has been described in detail in the first embodiment of the inventive concept, and a detailed description thereof will be omitted.

The SPC 500 may be located at an upper surface of the substrate 400, that is, at an interface between the active layer 100 and the substrate 400. The SPC 500 may be provided to modulate the frequency of the THz wave passing through the SPC 500. The SPC 500 may be formed by periodically patterning a plurality of patterns to form concentric circles, and may be formed of a metal material.

The configuration and function of the SPC 500 has been described in detail in the first embodiment of the technical spirit of the present invention, and a detailed description thereof will be omitted.

In addition, in the second embodiment of the technical concept of the present invention, the SPC 500 is formed on the upper surface of the substrate 400 as an example, but the formation position of the SPC 500 may be variously modified. .

As shown in FIG. 9, the SPC 500 is provided on the lower surface of the substrate 400, and the THz waves generated in the active layer 100 by light incident through the NGA 300 are transferred to the substrate ( It is also possible to change the formation position of the SPC 500 so as to enter the SPC after passing through 400.

As mentioned above, although an exemplary embodiment of the present invention has been described with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may realize the present invention in another specific form without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, it should be understood that one embodiment described above is illustrative in all respects and not restrictive.

Claims (12)

1. Active layer;

   A photoconductive antenna positioned above one side of the active layer;

   A nanolattice antenna (NGA) formed on the photoconductive antenna;

   A substrate located below the other side of the active layer; And

   Including a surface plasmon coupler (SPC) located at the interface between the top surface and the active layer of the substrate,

   The active layer is formed of InGaAs or InGaAs / InAlAs MQW,

   The photoconductive antenna,

   A metal parallel transmission line extending in parallel with a predetermined length;

   A central projection protruding symmetrically to face inward from a central region of the metal parallel transmission line; And

   An electrode pad symmetrically extended at both ends of the metal parallel transmission line,

   The NGA is formed on a photoconductive antenna, and the high frequency THz transceiver capable of frequency modulation, characterized in that for increasing the transmission degree of the femtosecond laser.
2. The method of claim 1,

   The NGA is located at the central projection of the photoconductive antenna, at least one pattern is a high efficiency THz transceiver capable of frequency modulation, characterized in that arranged in succession.
3. The method of claim 1,

   The active layer is a high frequency THz transceiver capable of frequency modulation, characterized in that formed of a homogeneous thin film or a hetero-layer thin film including MQW.
4. The method of claim 1,

   The SPC is a high efficiency THz transceiver capable of frequency modulation, characterized in that located on the lower surface of the substrate.
5. The method of claim 1,

   The SPC is formed by periodically patterning a plurality of patterns to form a concentric circle, high-efficiency THz transceiver, characterized in that formed of a metallic material.
6. The method of claim 1,

   The SPC is formed by periodically patterning in various forms of one or two-dimensional, high-efficiency THz transceiver, characterized in that formed of a metallic material.
7. The method of claim 1,

   High-efficiency THz transceiver that can be modulated as a single element and used as a transceiver capable of generating and detecting THz waves with a single photoconductive antenna.
8. Board;

   A transmitter positioned on the active layer and transmitting THz waves without voltage;

   A receiver positioned at a predetermined distance from the transmitter and detecting a THz wave;

   An NGA located on the receiver;

   A substrate located below the other side of the active layer; And

   SPC located at the interface between the substrate upper surface and the active layer,

   The active layer is formed of a homogeneous thin film or a heterogeneous thin film including MQW,

   The receiver,

   Low temperature growth active layer; And

   It includes a photoconductive antenna formed on the low temperature growth active layer,

   The photoconductive antenna,

   A metal parallel transmission line extending in parallel with a predetermined length;

   A central projection protruding symmetrically to face inward from a central region of the metal parallel transmission line; And

   An electrode pad symmetrically extended at both ends of the metal parallel transmission line,

   The NGA is formed on a photoconductive antenna, and the high frequency THz transceiver capable of frequency modulation, characterized in that for increasing the transmission degree of the femtosecond laser.
9. The method of claim 8,

   The NGA is located at the central projection of the photoconductive antenna, at least one pattern is a high efficiency THz transceiver capable of frequency modulation, characterized in that arranged in succession.
10. The method of claim 8,

    The SPC is a high efficiency THz transceiver capable of frequency modulation, characterized in that located on the lower surface of the substrate.
11. The method of claim 8,

    The SPC is formed by periodically patterning a plurality of patterns to form a concentric circle, high-efficiency THz transceiver, characterized in that formed of a metallic material.
12. The method of claim 8,

    The SPC is formed by periodically patterning in various forms of one or two-dimensional, high-efficiency THz transceiver, characterized in that formed of a metallic material.

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