KR101626806B1 - A frequency-modulating high-efficient terahertz transceiver - Google Patents
A frequency-modulating high-efficient terahertz transceiver Download PDFInfo
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- KR101626806B1 KR101626806B1 KR1020140094768A KR20140094768A KR101626806B1 KR 101626806 B1 KR101626806 B1 KR 101626806B1 KR 1020140094768 A KR1020140094768 A KR 1020140094768A KR 20140094768 A KR20140094768 A KR 20140094768A KR 101626806 B1 KR101626806 B1 KR 101626806B1
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Abstract
The present invention is directed to a high efficiency THz transceiver capable of frequency modulation.
A high efficiency THz transceiver capable of frequency modulation according to the present invention includes: an active layer; A photoconductive antenna positioned on one side of the active layer; A nano grid antenna (NGA) formed on the photoconductive antenna; A semiconductor substrate located on the other side of the active layer; And a surface plasmon combiner (SPC) positioned at an interface between the upper surface of the substrate and the active layer, wherein the active layer is formed of an InGaAs thin film or an InGaAs / InAlAs multilayer quantum well layer (MQW layer) Wherein the photoconductive antenna comprises: a metal parallel transmission line extending parallel to a predetermined length; A central protrusion protruding symmetrically to face inward from a central region of the metal parallel transmission line; And electrode pads extending symmetrically at both ends of the metal parallel transmission line.
The NGA may be located at the central protruding portion of the photoconductive antenna, and at least one pattern may be patterned and continuously arranged. The SPC may be formed on the lower surface of the active layer or may be formed by periodically patterning the plurality of patterns so as to form a concentric circle. Alternatively, the SPC may be formed of a metal material.
A high efficiency THz transceiver capable of frequency modulation according to the present invention can be applied to a THz wave transmitter (Tx) or a receiver (Rx) composed of discrete elements or a THz wave generating and detecting a THz wave by a single photoconductive antenna on a single substrate It can be applied to transceivers and can be applied to Tx and Rx integrated on a single substrate at a certain interval, so that THz waves can be transmitted and detected in individual devices or single devices.
According to the above configuration, the high-efficiency THz transceiver capable of frequency modulation according to the present invention can increase the generation output and the measurement sensitivity of the THz wave by integrating the NGA and the SPC, and at the same time, the THz wave generated with a constant band width becomes the surface plasmon resonance structure So that the frequency can be modulated. Thus, frequency selectivity can be obtained.
Description
The present invention relates to a high-efficiency terahertz (THz) transceiver capable of frequency modulation, and more particularly to a transceiver having a Nano Grating Antenna (NGA) and a Surface Plasmon Coupler (SPC) To a high-efficiency THz transceiver capable of frequency modulation capable of modulating a frequency and raising the output and measurement sensitivity of a THz wave.
The terahertz (THz) wave is an electromagnetic wave having a frequency ranging from 100 GHz to 10 THz between an infrared ray and a microwave. Recently, due to the development of advanced technology, the THz wave has been recognized as a future radio resource, ), BT (Bio Technology) and so on.
In particular, the THz wave propagates like a visible ray and transmits a variety of materials such as radio waves, so it is used not only for basic science such as physics, chemistry, biology, medicine, but also for detection of counterfeit bills, drugs, explosives, biochemical weapons, It is expected to be widely used in the fields of general industry, defense, security, etc. because it is possible to inspect structures non-destructively. Also, in the field of information communication, it is expected that THz technology will be widely used in 40Gbit / s wireless communication, high-speed data processing, and inter-satellite communication.
On the other hand, many techniques for measuring the spectroscopic characteristics of a sample with respect to the THz wave frequency region using the THz time domain spectroscopy (TDS) have been developed. In particular, studies on the development of THz waves and measurement devices have been actively carried out. In particular, the conventional photoconductive antenna has a higher output than other THz wave generating devices and measuring devices, and the desired electromagnetic characteristics And it is widely used in a large number of THz wave spectroscopy devices, and research on the THz wave spectroscopy device is also active.
Generally, the THz wave generation principle of the THz-wave photoconductive antenna is such that the photoelectrons excited by the femtosecond (fs: 10 -15 second) laser pulse incident on the substrate are accelerated along the potential difference between the driving electrodes, And the THz wave is radiated to the opposite side of the surface where the THz waves are present. On the other hand, when a THz wave is measured using a photoconductive antenna, a potential difference is not generated on the driving electrode, and a current generated when the excited photoelectrons due to the femtosecond laser pulse is accelerated by the THz wave incident on the opposite side of the driving electrode The THz wave is measured.
On the other hand, in the acquisition of the THz wave spectroscopy and image, the output of the generated element and the sensitivity of the measurement element are very important parameters, and development of a device having high output and high sensitivity is required steadily. In addition, there is a demand for the development of high efficiency THz generation and detection device and high-performance device such as frequency modulation for application to various fields of THz wave technology. In addition, the conventional THz wave transmission / reception apparatus is configured to generate or detect THz waves by a separate element in which a transmitter (Tx) and a receiver (Rx) each having a respective photoconductive antenna are separated, There is a problem that the size and application of the apparatus are limited.
The present invention can increase the generation output and measurement sensitivity of a THz wave by integrating a nano grating antenna (NGA) and a surface plasmon combiner (SPC), and at the same time, a THz wave generated with a constant band width passes through a surface plasmon resonance structure, Modulation THz transceiver capable of frequency modulation capable of having frequency selectivity.
Further, the present invention can be applied to a THz wave transmitter (Tx) or a receiver (Rx) composed of individual elements, or to be applied to THz waves Tx and Rx integrated on a single substrate, A high-efficiency THz transceiver capable of frequency modulation capable of transmitting and detecting waves.
It is another object of the present invention to provide a high-efficiency THz transceiver capable of frequency modulation that can be used safely even when applied to medical equipment that should be targeted to a human body.
The various problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.
A high efficiency THz transceiver capable of frequency modulation according to the present invention includes: an active layer; A photoconductive antenna positioned on one side of the active layer; A nano grid antenna (NGA) formed on the photoconductive antenna; A semiconductor substrate located on the other side of the active layer; And a surface plasmon combiner (SPC) positioned at an interface between the upper surface of the substrate and the active layer, wherein the active layer is formed of indium gallium arsenide (InGaAs) epilayer or InGaAs / indium aluminum Arsenide (InAlAs) multilayer quantum well layer (MQW layer), the photoconductive antenna comprising: a metal parallel transmission line extending parallel to a predetermined length; A central protrusion protruding symmetrically to face inward from a central region of the metal parallel transmission line; And electrode pads extending symmetrically at both ends of the metal parallel transmission line.
The NGA may be located at the central protruding portion of the photoconductive antenna, and at least one pattern may be patterned and continuously arranged.
The substrate may be formed of an insulator or a semi-insulating semiconductor substrate.
The SPC may be located on the lower surface of the active layer.
The SPC may be formed by periodically patterning a plurality of patterns so as to form concentric circles, or may be formed in other shapes, and may be formed of a metal material.
Also, a high-efficiency THz transceiver capable of frequency modulation according to the present invention includes: an active layer; A transmitter (Tx) located on the active layer and transmitting a THz wave; A receiver Rx positioned at a predetermined distance from the Tx to detect a THz wave formed in the low temperature growth active layer on the active layer; An NGA located on the Rx; A substrate located on the other side of the active layer; And SPC located at an interface between the upper surface of the substrate and the active layer, wherein the active layer is formed of an InGaAs thin film or an InGaAs / InAlAs MQW, and Rx is a low temperature growth active layer; And a photovoltaic antenna formed on the low-temperature growth active layer, wherein the photovoltaic antenna comprises: a metal parallel transmission line extending parallel to a predetermined length; A central protrusion protruding symmetrically to face inward from a central region of the metal parallel transmission line; And electrode pads extending symmetrically at both ends of the metal parallel transmission line.
The low-temperature growth active layer may be composed of a low-temperature grown InGaAs thin film or an InGaAs / InAlAs MQW.
The NGA may be located at the central protruding portion of the Rx photoconductive antenna, and at least one pattern may be patterned and continuously arranged.
The substrate may be formed of an insulator or a semi-insulating semiconductor substrate.
The SPC may be located on the lower surface of the active layer.
The SPC may be formed by periodically patterning a plurality of patterns so as to form concentric circles, or may be formed in other shapes, and may be formed of a metal material.
The high efficiency THz transceiver capable of frequency modulation according to the present invention can integrate a nano grid antenna (NGA) and a surface plasmon combiner (SPC) to increase the generation output and measurement sensitivity of a THz wave, And the frequency can be modulated while passing through the surface plasmon resonance structure, so that frequency selectivity can be obtained.
Also, the high-efficiency THz transceiver capable of frequency modulation according to the present invention can be applied to a THz wave transmitter (Tx) or a receiver (Rx) composed of individual elements, or to a THz transceiver that generates and detects THz waves by a single photoconductive antenna And can be applied to THz waves Tx and Rx integrated on a single substrate, so that THz waves can be transmitted and detected in an individual element or a single element.
In addition, the high-efficiency THz transceiver capable of frequency modulation according to the present invention can be safely used even when applied to a medical device that should be targeted to a human body.
It will be appreciated that embodiments of the technical idea of the present invention can provide various effects not specifically mentioned.
1 is a cross-sectional view of a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention.
FIG. 2 is a top view of a substrate in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention.
FIG. 3 is a bottom view of a substrate in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention.
FIGS. 4 and 5 are enlarged views of a nano grating antenna (NGA) portion in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention.
FIG. 6 is a view for explaining an example of a surface plasmon combiner (SPC) in a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention.
FIG. 7 is a view showing another modification of the formation position of the SPC in the high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the technical idea of the present invention.
8 is a perspective view illustrating a high-efficiency THz transceiver capable of frequency modulation according to a second embodiment of the technical idea of the present invention.
FIG. 9 is a view showing another modification of the formation position of the SPC in the high-efficiency THz transceiver capable of frequency modulation according to the second embodiment of the technical idea of the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.
Terms such as top, bottom, top, bottom, or top, bottom, etc. are used to distinguish relative positions in components. For example, in the case of naming the upper part of the drawing as upper part and the lower part as lower part in the drawings for convenience, the upper part may be named lower part and the lower part may be named upper part without departing from the scope of right of the present invention .
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning in the context of the relevant art and are to be construed as ideal or overly formal in meaning unless explicitly defined in the present application Do not.
Hereinafter, a preferred embodiment of a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view of a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the present invention. FIG. 2 is a cross- FIG. 3 is a bottom view of the substrate in a high-efficiency THz transceiver capable of frequency modulation according to the first embodiment of the technical idea of the present invention, and FIGS. 4 and 5 are cross- FIG. 6 is an enlarged view of a portion of a nano grid antenna (NGA) in a high-efficiency THz transceiver capable of frequency modulation according to an embodiment of the present invention. FIG. 6 is a cross- FIG. 7 is a diagram for explaining an example of a combiner (SPC) according to the first embodiment of the present invention. FIG. The available high efficiency THz transceiver is a view showing another modified example of the positions of formation of the surface plasmon combiner (SPC).
The high efficiency THz transceiver capable of frequency modulation according to the first embodiment of the technical idea of the present invention is configured to increase the generation output and the measurement sensitivity of the THz wave and includes the
1 to 6, a high-efficiency THz transceiver capable of frequency modulation according to a first embodiment of the technical idea of the present invention includes an active layer, a
The
The
The
The
The
When a laser pulse is incident on the
The
The
The
In the present invention, when the THz wave generated in the
When the laser pulse incident through the
In the first embodiment of the technical idea of the present invention, the
In the first embodiment of the technical idea of the present invention, the
7, the
8 is a perspective view illustrating a high-efficiency THz transceiver capable of frequency modulation according to a second embodiment of the technical idea of the present invention.
The high-efficiency THz transceiver capable of frequency modulation according to the second embodiment of the technical idea of the present invention can be applied to a single element in which a transmitter (Tx) 150 and a receiver (Rx) 180 are integrated, The modified portion will be mainly described in comparison with the first embodiment.
In the second embodiment of the technical idea of the present invention, the same reference numerals as those of the first embodiment can refer to the same components.
A high efficiency THz transceiver capable of frequency modulation according to a second embodiment of the present invention has an
The
In the second embodiment of the technical idea of the present invention, the
The
In the second embodiment of the present invention, the line width of the metal line of the Tx 150 (that is, the line width of the
The
The
For example, the
The low-temperature growth
The
The
The
The
That is, when the laser pulse is incident on the
The structure of the
The
The
The configuration and function of the
Also, in the second embodiment of the technical idea of the present invention, the
9, the
While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that one embodiment described above is illustrative in all aspects and not restrictive.
50;
150;
190; A low temperature growth
210;
230; A
310;
500; Surface plasmon coupler
Claims (12)
A photoconductive antenna positioned on one side of the active layer;
A nano grid antenna (NGA) formed on the photoconductive antenna;
A substrate located on the other side of the active layer; And
And a surface plasmon combiner (SPC) positioned at an interface between the upper surface of the substrate and the active layer,
The active layer is formed of InGaAs or InGaAs / InAlAs MQW,
The light-
A metal parallel transmission line extending parallel to a predetermined length;
Wherein the metal parallel transmission line includes a central protrusion protruding symmetrically to face inward from a central area; And
And an electrode pad extending symmetrically at both ends of the metal parallel transmission line,
Wherein the NGA is formed on the photoconductive antenna and increases the degree of transmission of the femtosecond laser.
Wherein the NGA is located at a central protruding portion of the photoconductive antenna, and at least one pattern is patterned and continuously arranged.
Wherein the active layer is formed of a homogeneous thin film or a heterostructured thin film containing MQW.
Wherein the SPC is located on a lower surface of the substrate.
Wherein the SPC is formed by periodically patterning a plurality of patterns so as to form a concentric circle, and is formed of a metal material.
A high-efficiency THz transceiver with frequency modulation used as a transceiver capable of generating and detecting THz waves with a single photoconductive antenna as a single element.
A transmitter positioned on the active layer and transmitting a THz wave at no voltage;
A receiver positioned at a predetermined distance from the transmitter and detecting a THz wave;
An NGA located on the receiver;
A substrate located on the other side of the active layer; And
And an SPC located at an interface between the upper surface of the substrate and the active layer,
Wherein the active layer is formed of a homogeneous thin film or a heteroepitaxial thin film containing MQW,
The receiver includes:
A low-temperature growth active layer formed on the active layer; And
And a photoconductive antenna formed on the low temperature growth active layer,
The light-
A metal parallel transmission line extending parallel to a predetermined length;
Wherein the metal parallel transmission line includes a central protrusion protruding symmetrically to face inward from a central area; And
And an electrode pad extending symmetrically at both ends of the metal parallel transmission line,
Wherein the NGA is formed on the photoconductive antenna and increases the degree of transmission of the femtosecond laser.
Wherein the NGA is located at a central protruding portion of the photoconductive antenna, and at least one pattern is patterned and continuously arranged.
Wherein the SPC is located on a lower surface of the substrate.
Wherein the SPC is formed by periodically patterning a plurality of patterns so as to form a concentric circle, and is formed of a metal material.
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KR1020140094768A KR101626806B1 (en) | 2014-07-25 | 2014-07-25 | A frequency-modulating high-efficient terahertz transceiver |
PCT/KR2015/007709 WO2016013898A1 (en) | 2014-07-25 | 2015-07-24 | High-efficiency terahertz transceiver enabling frequency modulation |
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KR102331922B1 (en) * | 2020-09-18 | 2021-12-01 | 재단법인 김해의생명산업진흥원 | System for monitoring of cross-linking state on medical film |
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KR101785508B1 (en) | 2016-03-25 | 2017-10-17 | 숭실대학교산학협력단 | Active metamaterial array and manufacturing method there of |
CN109188730A (en) * | 2018-10-10 | 2019-01-11 | 桂林电子科技大学 | A kind of broadband terahertz wave modulator, preparation method and modulating system |
RU2755003C1 (en) * | 2020-12-09 | 2021-09-09 | Общество с ограниченной ответственностью "Терагерцовые оптоэлектронные решения" | Laminated material for photoconductive antennas |
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