CN103457669B - Schottky gate array type Terahertz modulator and regulate and control method thereof - Google Patents
Schottky gate array type Terahertz modulator and regulate and control method thereof Download PDFInfo
- Publication number
- CN103457669B CN103457669B CN201310403216.8A CN201310403216A CN103457669B CN 103457669 B CN103457669 B CN 103457669B CN 201310403216 A CN201310403216 A CN 201310403216A CN 103457669 B CN103457669 B CN 103457669B
- Authority
- CN
- China
- Prior art keywords
- terahertz
- voltage
- gallium arsenide
- gate array
- modulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of Schottky gate array type Terahertz modem devices and regulate and control method thereof.The present invention adopts periodically grid-type metal-semiconductor surface plasma waveguide structure, the feature that the Schottky contacts utilizing metal-semiconductor interface to be formed and Terahertz surface plasma excimer position overlap with Schottky contacts, by introducing positive and negative electrode and applying voltage, achieve the Terahertz modulation function of device.Optical microstructures waveguide organically combines with semi-conductor electronic device by this device, can with other electronics elements and system integrated well, THz wave transmission and the optical function of resonance can be completed again.This devices function is at 2.2 ~ 3.2THz, operating frequency can be tuning with operating voltage, maximum percentage modulation 16dB, most high modulation rate 22MHz, be a kind of miniaturization, accessible site sheet on automatically controlled high speed Terahertz modulation device, meet the application requirement of Terahertz broadband wireless communications.
Description
Technical field
The invention belongs to Terahertz applied technical field, be specifically related to a kind of terahertz wave modulator and regulate and control method thereof.
Background technology
Terahertz (1THz=10
12hz) ripple refers to the electromagnetic wave of frequency in 0.1 ~ 10THz (corresponding wavelength is 3mm ~ 30 μm) scope, and this wave band, between microwave and light wave, is the crossing domain of electronics and photonic propulsion.Due to the specific position that it is residing in electromagnetic spectrum, THz wave has many advantageous characteristic such as perspectivity, fail safe, high s/n ratio, has very important science and using value in spectrum, imaging and the field such as to communicate.Terahertz communication has band roomy, directionality, good confidentiality, electromagnetism interference, indoor short distance or space secure radio communication can be realized, transmission rate can reach the advantages such as 1 ~ 10Gbps, therefore THz wave has unique advantage in the application of the communications field, and Terahertz modulator is the key core device of Terahertz communication system.
In recent years, numerous Terahertz modulators is suggested, comprise the Terahertz modulator based on quantum well, photonic crystal, semiconductor silicon, Meta Materials, Graphene etc., amplitude modulation, phase modulation, frequency modulation etc. can be divided into by modulation system, automatically controlled, magnetic control, the type such as light-operated can be divided into again by control mode.The key technical index of Terahertz modulator is: operating center frequency, bandwidth of operation, modulation rate and response time, modulation depth, loss etc.Such as, a kind of Terahertz amplitude based on Meta Materials and phase-modulator, its operating frequency 0.81THz, modulation bandwidth is about 20GHz, modulation depth 55%, modulation rate 2MHz [H.T.Chenetal., Appl.Phys.Lett93,091117 (2008)]; A kind of THz modulator based on single-layer graphene band-to-band transition mechanism, need the modulation depth using 50V voltage could realize being about 10%, modulation bandwidth is also only 50GHz [B.S.Rodriguezetal., Nat.Commun.3,780 (2012)].There is following problem in current Terahertz modulator: operating frequency is mainly low frequency (being generally less than 300GHz) in performance index; Modulation band width, generally only has several GHz; Modulation rate is low, and most high modulation rate, generally at 1 ~ 10MHz, cannot play the advantage of Terahertz wave height carrier frequency large transmission bandwidth; Modulation depth is little, generally at 3 ~ 10dB, and this index along with modulation rate and operating frequency rising and decline rapidly.Existing Terahertz modulation device still can not meet in all many-sides such as bandwidth of operation, modulation depth, modulation rate, insertion loss and control technique means the actual requirement that following Terahertz communicates completely.
From device architecture, the structure of existing Terahertz modulation device concentrates on the two-dimension plane structure such as Meta Materials, array of subwavelength holes, Graphene, owing to there is no periodic structure in the propagation direction, therefore be difficult to the resonance obtaining high quality factor, be also just difficult to realize higher modulation depth and device sensitivity.On the other hand, the small solid-state electronic cosmogonys such as quantum cascade laser are to become the radiation source of most potentiality in Terahertz communication, and it is operated in 2THz and exports with upper frequency, waveguide, therefore require to mate with waveguide type Terahertz modulator to modulate it with integrated.Therefore, need to propose new Terahertz modulation mechanism, design new device architecture to meet high-performance in Terahertz communication, miniaturization, to be convenient to the requirement of the Terahertz modulator integrated with solid-state electronic cosmogony.
Summary of the invention
The object of the present invention is to provide a kind of automatically controlled Schottky gate array type Terahertz modulator, in solution background technology, the operating frequency of Terahertz modulator is low, modulation rate is low, modulation depth is little, be difficult to the key technical problems such as integrated.
Technical scheme of the present invention is: on undoped gallium arsenide semiconductor, form periodically grid-type ledge structure, and form base metal grid and step metal gate array in its surperficial plated with gold, along grating array cycle direction, incident said structure can produce Terahertz surface plasma body resonant vibration excimer to THz wave, makes THz wave local on metal and interface.Base metal grid and step metal gate array are connected to form with positive and negative electrode respectively, and form Schottky contacts, and the space charge region of Schottky contacts just in time overlaps with the position of surface plasma excimer.Space charge sector width changes with applying voltage, changes Terahertz surface plasmon resonance frequency and resonant intensity, thus realizes the intensity modulated to THz wave.
Schottky gate array type Terahertz modulator comprises: base metal grating array, step metal strip, undoped gallium arsenide grid-type step, undoped gallium arsenide epitaxial loayer, semi-insulating GaAs substrate, positive electrode, negative electrode, wherein undoped gallium arsenide epitaxial loayer is positioned on semi-insulating GaAs substrate, be positioned on undoped gallium arsenide epitaxial loayer by the undoped gallium arsenide grid-type step of One Dimension Periodic arrangement, the two thickness is 1 μm, N-shaped adulterates, doping content 3 × 10
16cm
-3.Step metal strip and base metal grating array are made up of with the gold thin film of the 100nm on it titanium that 10nm is thick; Undoped gallium arsenide grid-type step top covers by step metal strip completely, and base metal grating array is positioned on undoped gallium arsenide epitaxial loayer, is 5 μm with step metal strip gap.Connected by base metal grating array by positive electrode, step metal strip is connected by negative electrode, and on two electrodes, welding lead just can apply modulated voltage signal.Whole size of devices is 10mm × 4mm × 0.4mm.
The method of work of Schottky gate array type Terahertz modulator is: between positive and negative electrode, apply modulation voltage forward or backwards, all can realize Terahertz wave modulation; When applying forward voltage, device has two steady job frequencies, and modulation depth increases with voltage and increases; Apply reverse voltage time, device have a steady job frequency, modulation depth with voltage increase and increase, also exist an adjustable working frequency range, operating frequency with voltage increase and decline.The puncture voltage 30V of device, maximum modulation speed 22MHz.
The invention has the beneficial effects as follows: 1. the feature that the Schottky contacts of devices use metal-semiconductor interface formation and surface plasma excimer position overlap with Schottky contacts, by introducing electrode, apply voltage, achieve the modulation function of device, optical microstructures waveguide is organically combined with semi-conductor electronic device, make this device can with other electronics elements and system integrated well, THz wave transmission and the optical function of resonance can be completed again; 2. adopt the metal-semiconductor surface plasma waveguide structure of cycle grating structure, both the interaction of THz wave and work semiconductor medium had been enhanced by surface plasma excimer, loss is reduced again by metal waveguide, the THz wave direction of propagation is introduced multiple periodicity resonant element, makes it have larger modulation depth and sensitivity compared with the Terahertz modulator of the planar structures such as such as Meta Materials; 3. (electrode is Schottky contacts with adopting Schottky diode in the past, another is ohmic contact) the Terahertz modulator of structure compare, two electrodes are all designed to Schottky contacts by this structure, making device all be in different modulation operating states when applying forward and reverse voltage, having enriched the working range of device.This structure also improves the puncture voltage of device, and device can be run under higher operating voltage, improves the reliability of device modulation depth and communication system.
Advantage of the present invention is: this Terahertz modulator operating frequency is high, scope large, and can be operated in the multiple frequency windows within the scope of 2.2 ~ 3.2THz, existing Terahertz modulator is difficult to be operated in this frequency range, and operating frequency is tunable; Modulation rate is high, maximum modulation speed 22MHz, exceedes the automatically controlled modulator of existing Terahertz; Operating voltage is low, and device withstand voltage value is high, reliable and stable; Be miniaturization, accessible site, all solid state semi-conductor electronic device, be again micro-structural terahertz waveguide device simultaneously, be convenient to and solidstate electronics THz source and other microwave electron element and the system integration.
Accompanying drawing explanation
Fig. 1 (a) is the schematic three dimensional views of Schottky gate array type Terahertz modulator;
Fig. 1 (b) is the top view of Schottky gate array type Terahertz modulator;
Fig. 1 (c) is the sectional view of the one-period unit of Schottky gate array type Terahertz modulator;
Fig. 2 is GaAs doped region and space charge region at the real part of terahertz wave band dielectric function and imaginary part curve;
Fig. 3 (a) is the change curve of space charge sector width with voltage of Schottky contacts in device;
Fig. 3 (b) is the carrier concentration profile figure of Schottky gate array type Terahertz modulator when 0V;
Fig. 3 (c) is the carrier concentration profile figure of Schottky gate array type Terahertz modulator when 15V;
Fig. 3 (d) is the carrier concentration profile figure of Schottky gate array type Terahertz modulator when-15V;
Fig. 4 (a) is the mode distributions figure of the first surface plasmon of resonance under step metal strip;
Fig. 4 (b) is the mode distributions figure of the second surface plasmon of resonance under base metal grating array;
Fig. 5 (a) is the Terahertz amplitude transmission experiment test spectral line of device under different forward voltage;
Fig. 5 (b) is the Terahertz amplitude transmission experiment test spectral line of device under different reverse voltage;
Fig. 6 is the volt-ampere characteristic figure of Schottky gate array type Terahertz modulator;
In figure: base metal grating array 1, step metal strip 2, undoped gallium arsenide grid-type step 3, undoped gallium arsenide epitaxial loayer 4, semi-insulating GaAs substrate 5, positive electrode 6, negative electrode 7.
Embodiment
The course of work of the present invention illustrates with the Schottky gate array type Terahertz modulator example of grid cycle 120 μm, grid width 50 μm:
As shown in Figure 1, doping content thick semi-insulating GaAs substrate Epitaxial growth 2 μm is 3 × 10 to the structure of device
16cm
-3n-shaped undoped gallium arsenide, this epitaxial loayer etches the grid-type step of cycle 120 μm, step width 50 μm, and height of formation is respectively undoped gallium arsenide epitaxial loayer and the grid-type step of 1 μm, and grid number is 10.The gold thin film that each grid-type step top is plated the thick titanium of 10nm and 100nm forms step metal strip; Also plate same metal film above undoped gallium arsenide epitaxial loayer, form base metal grating array, width 60 μm, with step metal strip spacing 5 μm.Connected by base metal grating array by positive electrode, step metal strip is connected by negative electrode, and on two electrodes, welding lead just can apply modulated voltage signal.Size of devices is 8mm × 3mm × 0.4mm.
The basic functional principle of this device is as follows: THz wave is this device surface incident along grating array cycle direction, some frequency produces Terahertz surface plasma body resonant vibration excimer, makes THz wave local on metal and interface.Base metal grid and step metal gate array are connected to form with positive and negative electrode respectively, and form Schottky contacts.The space charge region of one fixed width is there is in Schottky contacts, the carrier concentration in this region is far below the carrier concentration of around undoped gallium arsenide, as shown in Figure 2, two regions are distinct at the dielectric function of terahertz wave band, and this just makes two regions all different to the transmission of Terahertz, absorption and reflection etc.Device is when applying different bias voltage, and as shown in Figure 3, Schottky contacts Space-charge sector width can change with voltage, and the Carrier Profile in device changes thereupon.When device is 0V (Fig. 3 (b)), the space charge sector width of upper and lower Schottky contacts is all very little, and whole epitaxial loayer (comprising step) is substantially all doped region; When device is 15V (Fig. 3 (c)), superjacent air space charged region width increases, and be almost full of whole stepped area, the space charge region of below is constant; When device is-15V (Fig. 3 (d)), the space charge region below base metal grating array broadens, and be almost full of whole epitaxial loayer below it, and the doped region of step and below thereof is constant.As shown in Figure 4, the locus of Terahertz surface plasma excimer just in time overlaps with Schottky contacts, space charge sector width changes with applying voltage, changes Terahertz surface plasmon resonance frequency and resonant intensity, thus realizes the intensity modulated to THz wave.
The method of work of this device is: between positive and negative electrode, apply modulation voltage forward or backwards, all can realize Terahertz wave modulation.As shown in Fig. 5 (a), when applying forward voltage, device has two steady job frequencies and can realize, to the intensity modulated of THz wave, being respectively 2.22THz and 2.48THz.Along with the increase of voltage, the resonance frequency of first surface plasmon is by the transmitance of the THz wave of 2.48THz to 2.22THz, 2.22THz by reducing greatly, and the transmitance of 2.48THz is changed from small to big, the 15V modulated degree of depth is 16dB, and modulation depth increases with voltage and increases.As shown in Fig. 5 (b), when applying reverse voltage, a steady job frequency of device is 2.48THz, and increase with voltage, the transmitance of 2.48THz is changed from small to big, and-15V modulated the degree of depth is 14dB.In addition, when applying reverse voltage, second surface plasmon also correspond to a high-frequency resonant, resonance frequency increases with voltage, namely the space charge region below base metal grating array is widened and moves to low frequency, making can tuning work in 2.6 ~ 3.2THz frequency range, and operating frequency increases with voltage and declines.
As shown in Figure 6, electric current is less than 10 to the volt-ampere characteristic of this device
-14a, puncture voltage is 30V.Maximum working voltage due to designed device is 15V, so for the puncture voltage of 30V than maximum working voltage high twice, device is safe and reliable.The modulation rate of device determines primarily of device electrology characteristic, and maximum modulation speed and cut-off frequency are f
f=(2 π RC)
-1, wherein C is that the parasitic capacitance of Schottky diode is about 40pF, and it is determined by the area of single Schottky contacts, and R is that contact resistance is about 100 Ω, therefore f
creach as high as 22MHz.Whole size of devices is 10mm × 4mm × 0.4mm, and it is miniaturized, the design of waveguiding structure is convenient to and solidstate electronics THz source and other microwave electron element and the system integration.
Claims (6)
1. a Schottky gate array type Terahertz modulator, it is characterized in that comprising base metal grating array (1), step metal strip (2), undoped gallium arsenide grid-type step (3), undoped gallium arsenide epitaxial loayer (4), semi-insulating GaAs substrate (5), positive electrode (6), negative electrode (7), wherein the base metal grating array (1) of periodic arrangement, step metal strip (2) form surface plasma waveguide structure respectively, and positive electrode (6) and negative electrode (7) are Schottky contacts.
2. Schottky gate array type Terahertz modulator according to claim 1, it is characterized in that undoped gallium arsenide epitaxial loayer (4) is positioned on semi-insulating GaAs substrate (5), be positioned on undoped gallium arsenide epitaxial loayer (4) by the undoped gallium arsenide grid-type step (3) of One Dimension Periodic arrangement, undoped gallium arsenide grid-type step (3) and undoped gallium arsenide epitaxial loayer (4) thickness are 1 μm, N-shaped adulterates, doping content 3 × 10
16cm
-3.
3. Schottky gate array type Terahertz modulator according to claim 1, it is characterized in that step metal strip (2) and base metal grating array (1) are made up of the thick titanium film of 10nm and the thick gold thin film of 100nm, gold thin film covers on titanium film; Undoped gallium arsenide grid-type step (3) top covers by step metal strip (2) completely, base metal grating array (1) is positioned on undoped gallium arsenide epitaxial loayer (4), is 5 μm with step metal strip (2) gap.
4. Schottky gate array type Terahertz modulator according to claim 1, it is characterized in that base metal grating array (1) and step metal strip (2) respectively with they below undoped gallium arsenide form Schottky contacts, there is the space charge region of one fixed width in Schottky contacts, the carrier concentration in this region is far below the carrier concentration of around undoped gallium arsenide; By positive electrode (6), base metal grating array (1) is connected, step metal strip (2) is connected by negative electrode (7), welding lead on two electrodes, just can apply modulated voltage signal to this Schottky gate array type Terahertz modulator.
5. the Schottky gate array type Terahertz modulator according to any one of Claims 1-4, it is characterized in that THz wave is coupled to this Schottky gate array type Terahertz modulator surface along grid cycle orientation, metal gate and doped semiconductor contact-making surface produce Terahertz surface plasma body resonant vibration excimer, and the locus of this excimer just in time overlaps with space charge region, when applying forward voltage to this Schottky gate array type Terahertz modulator, the space charge region change width of step metal strip (2) below, resonance frequency and the resonance Strength Changes of the surface plasma of step metal strip (2) below will be caused, when applying negative voltage, the space charge region change width of base metal grating array (1) below, resonance frequency and the resonance Strength Changes of the surface plasma of base metal grating array (1) below will be caused, thus just, the THz wave modulation of two kinds of different modulating effects is realized respectively under back bias voltage.
6. use a regulate and control method for the Schottky gate array type Terahertz modulator described in any one of right 1 to 5, it is characterized in that applying modulation voltage forward or backwards between the positive and negative electrode of this modulator, all can realize Terahertz wave modulation; When applying forward voltage, this modulator has two steady job frequency modes, and modulation depth increases with voltage and increases; When applying reverse voltage, this modulator has a steady job frequency mode, and modulation depth increases with voltage and increases, and also there is an adjustable working frequency mode, modulation depth is constant simultaneously, and operating frequency increases with voltage and declines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310403216.8A CN103457669B (en) | 2013-09-05 | 2013-09-05 | Schottky gate array type Terahertz modulator and regulate and control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310403216.8A CN103457669B (en) | 2013-09-05 | 2013-09-05 | Schottky gate array type Terahertz modulator and regulate and control method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103457669A CN103457669A (en) | 2013-12-18 |
| CN103457669B true CN103457669B (en) | 2016-03-23 |
Family
ID=49739682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310403216.8A Expired - Fee Related CN103457669B (en) | 2013-09-05 | 2013-09-05 | Schottky gate array type Terahertz modulator and regulate and control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103457669B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653957B (en) * | 2016-10-27 | 2018-08-10 | 中国科学院理化技术研究所 | A kind of surface phasmon electroexcitation and electricity modulation integrated device and preparation method thereof |
| CN108683408B (en) * | 2018-04-13 | 2021-05-11 | 东南大学 | Time domain coding super surface with independently adjustable harmonic amplitude and phase |
| CN109065664A (en) * | 2018-08-13 | 2018-12-21 | 苏州特拉芯光电技术有限公司 | A kind of Terahertz chip |
| CN109217941B (en) * | 2018-11-27 | 2023-08-22 | 桂林电子科技大学 | Transmission-type terahertz wave encoder and 2-bit encoding system |
| CN111129685B (en) * | 2019-12-31 | 2021-03-19 | 东南大学 | Artificial plasmon resonator with deep subwavelength and high quality factor |
| CN113156670B (en) * | 2021-03-29 | 2022-07-12 | 江苏大学 | Metamaterial modulator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963358A (en) * | 1995-04-26 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device and method for its operation |
| CN1701259A (en) * | 2003-03-11 | 2005-11-23 | 日本电信电话株式会社 | Semiconductor optical converter |
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
-
2013
- 2013-09-05 CN CN201310403216.8A patent/CN103457669B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963358A (en) * | 1995-04-26 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor device and method for its operation |
| CN1701259A (en) * | 2003-03-11 | 2005-11-23 | 日本电信电话株式会社 | Semiconductor optical converter |
| CN102520532A (en) * | 2011-12-19 | 2012-06-27 | 东南大学 | High-speed terahertz modulator and production method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Active terahertz metamaterial devices;Hou-Tong Chen,etal.;《Nature》;20061130;第444卷;正文第597页第1段至第598页第6段，及图1-2 * |
| Plasmonic finite-thickness metal–semiconductor–metal waveguide as ultra-compact modulator;V.E.Babicheva,etal.;《Photonics and Nanostructures – Fundamentals and Applications》;20130726;全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103457669A (en) | 2013-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103457669B (en) | Schottky gate array type Terahertz modulator and regulate and control method thereof | |
| US10078233B2 (en) | Optical waveguide resonators | |
| US9927675B2 (en) | Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof | |
| Liang et al. | Integrated terahertz graphene modulator with 100% modulation depth | |
| US8836446B2 (en) | Methods and apparatus for terahertz wave amplitude modulation | |
| US9590739B2 (en) | High electron mobility transistor-based terahertz wave space external modulator | |
| KR101139938B1 (en) | Terahertz wave resonator and modulator utilizing metamaterial | |
| US7907024B2 (en) | Resonant tunneling diode oscillation device and inspection apparatus | |
| CN102393571B (en) | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed | |
| CN107430292B (en) | Electro-optic and thermo-optic modulators | |
| US9819145B2 (en) | Laser and integrated graphene modulator | |
| US9904015B2 (en) | Optoelectronic integrated circuitry for transmitting and/or receiving wavelength-division multiplexed optical signals | |
| CN103562790B (en) | Electrooptic modulator | |
| US9236833B2 (en) | Electromagnetic wave generation device and detection device | |
| US20150346520A1 (en) | Optic modulator and method of manufacturing the same | |
| CN105122106A (en) | Nanoscale plasmonic field-effect modulator | |
| US10222675B2 (en) | Thin film plasmonic optical modulator | |
| CN100424550C (en) | Modulator apparatus for terahertz wave of photon crystal and its method | |
| CN105428998B (en) | Exocoel narrow linewidth laser | |
| CN204166232U (en) | The THz wave switch of four rectangular graphene cavity configurations | |
| KR101704664B1 (en) | Terahertz modulator | |
| Fan et al. | Active terahertz plasmonic crystal waveguide based on double-structured Schottky grating arrays | |
| JP3345299B2 (en) | Quantum well electro-optic modulator | |
| Zografopoulos et al. | Electrically tunable solid-state terahertz metamaterial absorbers | |
| US20030107799A1 (en) | System and method for wavelength conversion using traveling-wave polymers for WDM applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160323 Termination date: 20210905 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |