CN204166232U - The THz wave switch of four rectangular graphene cavity configurations - Google Patents
The THz wave switch of four rectangular graphene cavity configurations Download PDFInfo
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- CN204166232U CN204166232U CN201420683338.7U CN201420683338U CN204166232U CN 204166232 U CN204166232 U CN 204166232U CN 201420683338 U CN201420683338 U CN 201420683338U CN 204166232 U CN204166232 U CN 204166232U
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Abstract
The utility model discloses a kind of THz wave switch of four rectangular graphene cavity configurations.It comprises signal input part, signal output part, symmetrical graphene-structured layer, silicon dioxide layer, P-type silicon substrate; P-type silicon upper surface of substrate is provided with four T-shaped grooves, the top of P-type silicon substrate is silicon dioxide layer, the top of silicon dioxide layer is symmetrical graphene-structured layer, Terahertz surface wave signal inputs from signal input part, surface along symmetrical graphene-structured layer is propagated, and finally exports from signal output part, by regulating the bias direct current voltage being applied to symmetrical graphene-structured layer and P-type silicon substrate, regulate the effective mode refractive index of Graphene, thus realize the break-make of terahertz signal.It is simple that the utility model has structure, and size is little, easy to make, is convenient to integrated, and modulating speed is fast, modulation efficiency advantages of higher.
Description
Technical field
The utility model relates to THz wave switch, particularly relates to a kind of THz wave switch of four rectangular graphene cavity configurations.
Background technology
Terahertz (Terahertz, being called for short THz) ripple refers to the electromagnetic wave of frequency within the scope of 0.1THz ~ 10THz, it is in the field of electronics to photonics transition, be integrated with the advantage of microwave communication and optical communication: first THz wave communication can obtain the bandwidth more much bigger than microwave communication, effectively can solve the problem of increasingly serious band resource shortage.THz wave has good penetrability in addition, and it can penetrate the materials such as flue dust, wall, carbon plate, cloth and pottery with very little decay, solves the limitation of optical communication in the rugged surroundings such as flue dust.The transport property of THz wave determines THz wave and can be applied to radio communication.Terahertz radar resolution is high in addition, can become following High Accuracy Radar developing direction.Growing THz wave technology all has great scientific value and wide application prospect in astronomy, biomedicine, safety and environmental monitoring, imaging, broadband wireless communications and radar etc., wherein the THz wave communication technology has the characteristic of millimetre-wave attenuator and optical communication, can be applied to the aspects such as indoor local area network communication.Research institution in the world about THz wave emerges in multitude, and achieves a lot of achievement in research, and Terahertz Technology will be the focus of extensively research in following a very long time world wide.
THz wave communication system be unable to do without the performance guarantee of various THz wave function element.Although although launch gradually for the research of THz wave function element both at home and abroad, but THz wave function element is as the Focal point and difficult point in the application of THz wave science and technology, compare the fast development of THz wave generation and pick-up unit and THz wave transmission waveguide, still need to drop into a large amount of man power and materials and carry out deep exploration and research.THz wave switch is studied for promoting that the research of THz wave function element has indispensable significance.THz wave switch is a kind of very important THz wave device, for controlling the break-make of the THz wave in THz wave system.Current lot of domestic and international scientific research institution is all devoted to the research of this respect and makes some progress, but seldom has relevant report.Existing THz wave switch often complex structure, volume is larger and expensive, the THz wave device of miniaturization, low cost is the key of THz wave technology application, therefore be necessary to design a kind of structure simple, size is little, easy to make, be convenient to integrated, modulating speed is fast, and modulation efficiency THz wave switch is with satisfied following THz wave technology application needs.
Utility model content
The utility model provides a kind of THz wave switch of four rectangular graphene cavity configurations, and technical scheme is as follows:
The THz wave switch of four rectangular graphene cavity configurations comprises signal input part, signal output part, symmetrical graphene-structured layer, silicon dioxide layer, P-type silicon substrate, P-type silicon upper surface of substrate is provided with four T-shaped grooves, the top of P-type silicon substrate is silicon dioxide layer, the top of silicon dioxide layer is symmetrical graphene-structured layer, symmetrical graphene-structured layer is by rectangular graphene sheet, first T-shaped graphene film, second T-shaped graphene film, 3rd T-shaped graphene film, 4th T-shaped graphene film composition, wherein the lower end of the first T-shaped graphene film is connected with the upper end, left side of rectangular graphene sheet, the lower end of the second T-shaped graphene film is connected with the upper end, right side of rectangular graphene sheet, first T-shaped graphene film, second T-shaped graphene film is about rectangular graphene sheet and the 3rd T-shaped graphene film, 4th T-shaped graphene film is symmetrical, left end and the right-hand member of symmetrical graphene-structured layer are respectively equipped with signal input part, signal output part, the left end of symmetrical graphene-structured layer is connected with the left end of silicon dioxide layer, the right-hand member of symmetrical graphene-structured layer is connected with the right-hand member of silicon dioxide layer, Terahertz surface wave signal inputs from signal input part, surface along symmetrical graphene-structured layer is propagated, finally export from signal output part, by regulating the bias direct current voltage being applied to symmetrical graphene-structured layer and P-type silicon substrate, regulate the effective mode refractive index of Graphene, thus realize the break-make of terahertz signal.
Described symmetrical graphene-structured layer is single-layer graphene sheet material.The length of described rectangular graphene sheet is 22.4 μm ~ 22.6 μm, and width is 1.3 μm ~ 1.5 μm, the first described T-shaped graphene film, second T-shaped graphene film, 3rd T-shaped graphene film, the size dimension of the 4th T-shaped graphene film is identical, form by a large rectangle graphene film and little rectangular graphene sheet, the length of large rectangle graphene film is 7.1 μm ~ 7.3 μm, width is 5.7 μm ~ 5.9 μm, the length of little rectangular graphene sheet is 2.2 μm ~ 2.4 μm, width is 1.7 μm ~ 1.9 μm, the center line that the center line that large rectangle graphene film is corresponding is corresponding with little rectangular graphene sheet overlaps, first T-shaped graphene film and the second T-shaped graphene film distance are the most nearby 1.7 μm ~ 1.9 μm.The length of described silicon dioxide layer is 22.4 μm ~ 22.6 μm, and width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.The length of described P-type silicon substrate is 22.4 μm ~ 22.6 μm, and width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.The bed-plate dimension of four described T-shaped grooves and relative position and the first T-shaped graphene film, the second T-shaped graphene film, the 3rd T-shaped graphene film, the 4th T-shaped graphene film are consistent, and fluting thickness is 100 μm ~ 200 μm.
It is simple that the utility model has structure, and size is little, easy to make, is convenient to integrated, and modulating speed is fast, modulation efficiency advantages of higher.
Accompanying drawing explanation
Fig. 1 is the three-dimensional structure diagram of the THz wave switch of four rectangular graphene cavity configurations;
Fig. 2 is the structural drawing of symmetrical graphene-structured layer;
Fig. 3 is the vertical view of P-type silicon substrate;
Fig. 4 is the surface field intensity distribution of switch when 7THz conducting;
Fig. 5 be switch 7THz not completely conducting time surface field intensity distribution;
Fig. 6 is the surface field intensity distribution of switch when 7THz disconnects;
Fig. 7 is the response time curve map of switch at 7THz;
Fig. 8 is the extinction ratio of switch at 6.97THz ~ 7.03THz.
Embodiment
As shown in Figures 1 to 3, the THz wave switch of four rectangular graphene cavity configurations comprises signal input part 1, signal output part 2, symmetrical graphene-structured layer 3, silicon dioxide layer 4, P-type silicon substrate 5, P-type silicon substrate 5 upper surface is provided with four T-shaped grooves 6, the top of P-type silicon substrate 5 is silicon dioxide layer 4, the top of silicon dioxide layer 4 is symmetrical graphene-structured layer 3, symmetrical graphene-structured layer 3 is by rectangular graphene sheet 7, first T-shaped graphene film 8, second T-shaped graphene film 9, 3rd T-shaped graphene film 10, 4th T-shaped graphene film 11 forms, wherein the lower end of the first T-shaped graphene film 8 is connected with the upper end, left side of rectangular graphene sheet 7, the lower end of the second T-shaped graphene film 9 is connected with the upper end, right side of rectangular graphene sheet 7, first T-shaped graphene film 8, second T-shaped graphene film 9 is about rectangular graphene sheet 7 and the 3rd T-shaped graphene film 10, 4th T-shaped graphene film 11 is symmetrical, left end and the right-hand member of symmetrical graphene-structured layer 3 are respectively equipped with signal input part 1, signal output part 2, the left end of symmetrical graphene-structured layer 3 is connected with the left end of silicon dioxide layer 4, the right-hand member of symmetrical graphene-structured layer 3 is connected with the right-hand member of silicon dioxide layer 4, Terahertz surface wave signal inputs from signal input part 1, surface along symmetrical graphene-structured layer 3 is propagated, finally export from signal output part 2, by regulating the bias direct current voltage being applied to symmetrical graphene-structured layer 3 and P-type silicon substrate 5, regulate the effective mode refractive index of Graphene, thus realize the break-make of terahertz signal.
Described symmetrical graphene-structured layer 3 is single-layer graphene sheet material.The length of described rectangular graphene sheet 7 is 22.4 μm ~ 22.6 μm, and width is 1.3 μm ~ 1.5 μm, the first described T-shaped graphene film 8, second T-shaped graphene film 9, 3rd T-shaped graphene film 10, the size dimension of the 4th T-shaped graphene film 11 is identical, form by a large rectangle graphene film and little rectangular graphene sheet, the length of large rectangle graphene film is 7.1 μm ~ 7.3 μm, width is 5.7 μm ~ 5.9 μm, the length of little rectangular graphene sheet is 2.2 μm ~ 2.4 μm, width is 1.7 μm ~ 1.9 μm, the center line that the center line that large rectangle graphene film is corresponding is corresponding with little rectangular graphene sheet overlaps, first T-shaped graphene film 8 and the second T-shaped graphene film 9 distance are the most nearby 1.7 μm ~ 1.9 μm.The length of described silicon dioxide layer 4 is 22.4 μm ~ 22.6 μm, and width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.The length of described P-type silicon substrate 5 is 22.4 μm ~ 22.6 μm, and width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.The bed-plate dimension of four described T-shaped grooves 6 and relative position and the first T-shaped graphene film 8, second T-shaped graphene film 9, the 3rd T-shaped graphene film 10, the 4th T-shaped graphene film 11 are consistent, and fluting thickness is 100 μm ~ 200 μm.
Embodiment 1
The THz wave switch of four rectangular graphene cavity configurations:
Symmetrical graphene-structured layer is single-layer graphene sheet material.The length of rectangular graphene sheet is 22.5 μm, and width is 1.4 μm; The size dimension of the first T-shaped graphene film, the second T-shaped graphene film, the 3rd T-shaped graphene film, the 4th T-shaped graphene film is identical, form by a large rectangle graphene film and little rectangular graphene sheet, the length of large rectangle graphene film is 7.2 μm, width is 5.8 μm, the length of little rectangular graphene sheet is 2.3 μm, width is 1.8 μm, the center line that the center line that large rectangle graphene film is corresponding is corresponding with little rectangular graphene sheet overlaps, and the first T-shaped graphene film and the second T-shaped graphene film distance are the most nearby 1.8 μm.The length of silicon dioxide layer is 22.5 μm, and width is 20.3 μm, and thickness is 300 μm.The length of P-type silicon substrate is 22.5 μm, and width is 20.3 μm, and thickness is 300 μm.The bed-plate dimension of four T-shaped grooves and relative position and the first T-shaped graphene film, the second T-shaped graphene film, the 3rd T-shaped graphene film, the 4th T-shaped graphene film are consistent, and fluting thickness is 150 μm.The property indices of the THz wave switch of four rectangular graphene cavity configurations adopts COMSOLMultiphysics software to test, gained switch when the conducting of 7THz Frequency point, not completely conducting time and the surface field intensity in the time of disconnection respectively as shown in accompanying drawing 4, Fig. 5 and Fig. 6, realized the break-make of good terahertz signal as seen from the figure by the pattern effective refractive index of adjustment Graphene.Figure 7 shows that the response time curve map of switch at 7THz, by Tu Ke get, the modulating time of switch is at the millisecond order of magnitude.Figure 8 shows that the extinction ratio of switch at 6.97THz ~ 7.03THz, can be obtained by Fig. 8, switch has the extinction ratio of 24.97dB at 7THz Frequency point.
Claims (6)
1. a THz wave switch for four rectangular graphene cavity configurations, is characterized in that comprising signal input part (1), signal output part (2), symmetrical graphene-structured layer (3), silicon dioxide layer (4), P-type silicon substrate (5), P-type silicon substrate (5) upper surface is provided with four T-shaped grooves (6), the top of P-type silicon substrate (5) is silicon dioxide layer (4), the top of silicon dioxide layer (4) is symmetrical graphene-structured layer (3), symmetrical graphene-structured layer (3) is by rectangular graphene sheet (7), first T-shaped graphene film (8), second T-shaped graphene film (9), 3rd T-shaped graphene film (10), 4th T-shaped graphene film (11) composition, wherein the lower end of the first T-shaped graphene film (8) is connected with the upper end, left side of rectangular graphene sheet (7), the lower end of the second T-shaped graphene film (9) is connected with the upper end, right side of rectangular graphene sheet (7), first T-shaped graphene film (8), second T-shaped graphene film (9) is about rectangular graphene sheet (7) and the 3rd T-shaped graphene film (10), 4th T-shaped graphene film (11) is symmetrical, left end and the right-hand member of symmetrical graphene-structured layer (3) are respectively equipped with signal input part (1), signal output part (2), the left end of symmetrical graphene-structured layer (3) is connected with the left end of silicon dioxide layer (4), the right-hand member of symmetrical graphene-structured layer (3) is connected with the right-hand member of silicon dioxide layer (4), Terahertz surface wave signal inputs from signal input part (1), surface along symmetrical graphene-structured layer (3) is propagated, finally export from signal output part (2), by regulating the bias direct current voltage being applied to symmetrical graphene-structured layer (3) and P-type silicon substrate (5), regulate the effective mode refractive index of Graphene, thus realize the break-make of terahertz signal.
2. the THz wave switch of a kind of four rectangular graphene cavity configurations as claimed in claim 1, is characterized in that described symmetrical graphene-structured layer (3) is single-layer graphene sheet material.
3. the THz wave switch of a kind of four rectangular graphene cavity configurations as claimed in claim 1, it is characterized in that the length of described rectangular graphene sheet (7) is 22.4 μm ~ 22.6 μm, width is 1.3 μm ~ 1.5 μm, the first described T-shaped graphene film (8), second T-shaped graphene film (9), 3rd T-shaped graphene film (10), the size dimension of the 4th T-shaped graphene film (11) is identical, form by a large rectangle graphene film and little rectangular graphene sheet, the length of large rectangle graphene film is 7.1 μm ~ 7.3 μm, width is 5.7 μm ~ 5.9 μm, the length of little rectangular graphene sheet is 2.2 μm ~ 2.4 μm, width is 1.7 μm ~ 1.9 μm, the center line that the center line that large rectangle graphene film is corresponding is corresponding with little rectangular graphene sheet overlaps, first T-shaped graphene film (8) and the second T-shaped graphene film (9) distance are the most nearby 1.7 μm ~ 1.9 μm.
4. the THz wave switch of a kind of four rectangular graphene cavity configurations as claimed in claim 1, it is characterized in that the length of described silicon dioxide layer (4) is 22.4 μm ~ 22.6 μm, width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.
5. the THz wave switch of a kind of four rectangular graphene cavity configurations as claimed in claim 1, it is characterized in that the length of described P-type silicon substrate (5) is 22.4 μm ~ 22.6 μm, width is 20.2 μm ~ 20.4 μm, and thickness is 200 μm ~ 400 μm.
6. the THz wave switch of a kind of four rectangular graphene cavity configurations as claimed in claim 1, it is characterized in that the bed-plate dimension of four described T-shaped grooves (6) and relative position and the first T-shaped graphene film (8), the second T-shaped graphene film (9), the 3rd T-shaped graphene film (10), the 4th T-shaped graphene film (11) are consistent, fluting thickness is 100 μm ~ 200 μm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200013A (en) * | 2016-09-06 | 2016-12-07 | 中国科学院重庆绿色智能技术研究院 | A kind of Terahertz manipulator of Graphene metal composite structure |
| CN106602184A (en) * | 2016-12-23 | 2017-04-26 | 中国计量大学 | Terahertz wave tunable filter based on graphene periodic slot |
| CN106707560A (en) * | 2016-12-15 | 2017-05-24 | 中国计量大学 | Electric-control terahertz wave switch based on graphene thin film structure |
| CN108899657A (en) * | 2018-07-09 | 2018-11-27 | 中国计量大学 | The adjustable absorber of broadband graphene Terahertz |
| WO2019237250A1 (en) * | 2018-06-12 | 2019-12-19 | 东莞理工学院 | Dynamically adjustable communication function device |
-
2014
- 2014-11-14 CN CN201420683338.7U patent/CN204166232U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106200013A (en) * | 2016-09-06 | 2016-12-07 | 中国科学院重庆绿色智能技术研究院 | A kind of Terahertz manipulator of Graphene metal composite structure |
| CN106707560A (en) * | 2016-12-15 | 2017-05-24 | 中国计量大学 | Electric-control terahertz wave switch based on graphene thin film structure |
| CN106602184A (en) * | 2016-12-23 | 2017-04-26 | 中国计量大学 | Terahertz wave tunable filter based on graphene periodic slot |
| CN106602184B (en) * | 2016-12-23 | 2019-01-18 | 中国计量大学 | Based on graphene period fluting THz wave tunable filter |
| WO2019237250A1 (en) * | 2018-06-12 | 2019-12-19 | 东莞理工学院 | Dynamically adjustable communication function device |
| CN108899657A (en) * | 2018-07-09 | 2018-11-27 | 中国计量大学 | The adjustable absorber of broadband graphene Terahertz |
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