CN112382859A - Double-capacitor terahertz metamaterial electric regulation and control device structure - Google Patents
Double-capacitor terahertz metamaterial electric regulation and control device structure Download PDFInfo
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- CN112382859A CN112382859A CN202011196946.1A CN202011196946A CN112382859A CN 112382859 A CN112382859 A CN 112382859A CN 202011196946 A CN202011196946 A CN 202011196946A CN 112382859 A CN112382859 A CN 112382859A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention discloses a terahertz metamaterial electric-tuning control device structure based on indium gallium zinc oxide, which comprises a substrate layer and a microstructure resonator array layer formed by a metal resonance ring and an indium gallium zinc oxide layer, wherein the metal resonance ring and the indium gallium zinc oxide layer are filled and etched on the substrate layer; the Schottky electrode is connected with the first microstrip gold wire through a second microstrip gold wire; the Schottky electrode and the ohmic electrode are respectively positioned on two sides of the upper surface of the substrate layer. The adjustment of the transmission spectrum response of the terahertz wave with specific frequency is realized by changing the conductivity of the IGZO semiconductor material; by varying the size of the structures in the array elements, a greater range of tuning of the response wavelength can be achieved. The terahertz regulating and controlling device with the double-capacitor opening resonant ring structure is compact in structure, simple to manufacture, high in regulating and controlling efficiency and good in application prospect in the field of terahertz regulating and controlling.
Description
Technical Field
The invention relates to the field of metamaterial electromagnetic wave regulation and control device design, in particular to a dual-capacitor terahertz metamaterial electric regulation and control device structure.
Background
The terahertz wave is a wave band with the frequency of 0.1-10 THz. Due to the characteristics of low photon energy, strong penetrability and capability of carrying a large amount of information, terahertz waves are used in the fields of communication, radar, safety monitoring, imaging and the like, and are particularly applied to biological imaging and chemical detection (terahertz time-domain spectroscopy). In recent years, due to the development of terahertz light source devices such as ultrafast lasers, terahertz is becoming more and more practical. However, the development of the terahertz modulation technology is relatively laggard, and some researches have been made, but the technology is still not perfect. The metamaterial modulation modes mainly comprise four types of optical modulation, electrical modulation, thermal modulation and mechanical modulation, and each type has advantages and disadvantages, wherein in the electrical modulation technology, GaAs is mostly used as a substrate at present, a single-capacitor open resonant ring metamaterial modulation device and a liquid crystal metamaterial modulation device are manufactured on the substrate, but the modulation depth and the bandwidth of the metamaterial modulation device are still insufficient: Hou-Tong Chen reports in Natue journal that the transmission coefficient of the GaAs substrate metamaterial single-capacitor resonance structure regulating and controlling device is 0.1; for a liquid crystal based metamaterial steering device,
kowerdziej reports a bimodal spacing of 0.35 THz.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides various double-capacitor terahertz metamaterial electrically-controlled device structures, which can realize the adjustment of terahertz waves in a specific frequency band and the adjustment of response wavelength in a large range.
In order to achieve the purpose, the dual-capacitor terahertz metamaterial electric-tuning control device structure provided by the invention comprises a substrate layer and a microstructure resonator array layer formed by a metal resonance ring and an indium gallium zinc oxide layer, wherein the metal resonance ring and the indium gallium zinc oxide layer are filled and etched on the substrate layer, and a first microstrip gold wire is arranged in the metal resonance ring; the Schottky electrode is connected with the first microstrip gold wire through a second microstrip gold wire; the Schottky electrode and the ohmic electrode are respectively positioned on two sides of the upper surface of the substrate layer.
Furthermore, the microstructure resonator array layer comprises a plurality of split ring resonator units, each split ring resonator unit comprises a metal resonance ring and an indium gallium zinc oxide layer, the metal resonance ring is a double-capacitance split ring resonator, two single-capacitance split ring resonators are combined in a back-to-back mode, the two single-capacitance split ring resonators are symmetrical about the center line of the metal resonance ring, a microstrip gold wire is etched at the center line, and the opening of each single-capacitance split ring resonator is respectively wrapped in the indium gallium zinc oxide layer.
Further, each of the metal resonance rings has a thickness of 0.3 μm and a width of 6 μm.
Furthermore, the side length of the annular part of the metal resonance ring is 66 microns, the length of the first microstrip gold wire is 86 microns, and two ends of the first microstrip gold wire extend out of the metal resonance ring.
Furthermore, two grooves are symmetrically arranged on the substrate layer.
Further, the groove is filled with indium gallium zinc oxide, the metal resonant ring is etched on the plane after filling, the capacitor is covered with the indium gallium zinc oxide, and the two layers of indium gallium zinc oxide are wrapped to form an indium gallium zinc oxide layer.
Compared with the prior art, the invention can realize the following beneficial effects:
the double-capacitor split ring resonator array part is formed by terahertz metamaterial units, each metamaterial unit has certain resonant frequency, terahertz penetration at the resonant frequency is poor, and terahertz penetration at non-resonant frequency is strong. The semiconductor IGZO and the metamaterial metal layer are utilized to form the Schottky diode, and when different voltages are applied, the IGZO has different conductivities, so that the terahertz waves of a specific frequency range are adjusted. When a forward bias is applied between the semiconductor and the metal, the conductivity drops rapidly due to the presence of the schottky barrier; when a reverse bias is applied between the semiconductor and the metal, the semiconductor is in an on state and has high conductivity. The conductivity of the IGZO material in the capacitor changes along with the change of voltage, the transmission coefficient of the terahertz wave at the resonant frequency can be improved, reduced or even eliminated, and therefore the terahertz wave can be controlled at a specific frequency. That is, when the applied external voltage is different, the IGZO conductivity is different, so that the adjustment depths of the terahertz devices are different from each other. By changing the size of the array structure, the response wavelength can be adjusted in a large range. The terahertz metamaterial regulating and controlling device is compact in structure, simple to manufacture and high in regulating and controlling efficiency.
Drawings
FIG. 1 is a structural schematic diagram of a terahertz metamaterial electrical control device.
FIG. 2 is a schematic diagram of a dual-capacitor terahertz metamaterial unit.
Fig. 3 is a three-dimensional view of a microstructure composed of a dual-capacitor metal resonance ring and an IGZO semiconductor.
Fig. 4 is a three-dimensional view of a high-resistance silicon substrate.
FIG. 5(a) is "S" of a metamaterial unit21Frequency "analog curve.
FIG. 5(b) is a simulation plot of "transmittance versus frequency" for a metamaterial unit.
FIG. 6 is a simulation curve of a metamaterial unit with different values of c.
Detailed Description
In order to make the technical solution and advantages of the present invention more clear, the following description is made with reference to the accompanying drawings.
One of the main parts of the device of this embodiment is a microstructure resonator array layer 5, which is a dual-capacitor split-ring resonator array and is an array composed of split-ring resonator units. A double-capacitor terahertz metamaterial electric control device structure comprises a substrate layer 1, and a microstructure resonator array layer 5 which is formed by a metal resonance ring 7 and an indium gallium zinc oxide layer 8, wherein the metal resonance ring 7 and the indium gallium zinc oxide layer are filled and etched on the substrate layer 1 and used for modulating terahertz electromagnetic waves passing through the microstructure resonator array layer; a first microstrip gold wire 6-1 is arranged in the metal resonance ring 7, and two ends of the first microstrip gold wire 6-1 extend out of the metal resonance ring 7; the Schottky electrode 3 is connected with the first microstrip gold wire 6-1 through the second microstrip gold wire 6-2; the Schottky electrode device further comprises an IGZO strip 4 which is in contact with the indium gallium zinc oxide layer 8 and an ohmic electrode 2 which is connected with the IGZO strip 4, and the Schottky electrode 3 and the ohmic electrode 2 are respectively positioned on two sides of the upper surface of the substrate layer 1. The microstructure resonator array layer 5 includes a plurality of split ring resonator units, each split ring resonator unit includes a metal resonance ring 7 and an indium gallium zinc oxide layer 8, the metal resonance ring 7 is a double-capacitance split ring resonator, and is formed by combining two single-capacitance split ring resonators in a back-to-back manner, the two single-capacitance split ring resonators are symmetrical about a center line of the metal resonance ring 7, a microstrip gold wire 6-1 is etched at the center line, and an opening of each single-capacitance split ring resonator is respectively wrapped in the indium gallium zinc oxide layer 8, as shown in fig. 2 and 3.
In this embodiment, Ti/Au is used as the ohmic electrode 2, and the metal resonance ring 7 is led out through the microstrip gold wire 6-2 and connected to the schottky electrode 3. The material of the Schottky electrode is the same as that of the metal resonance ring, and the Schottky electrode can be etched together with the microstrip gold wire 6-2 and the metamaterial unit metal part during etching. The metal resonant ring 7 and the indium gallium zinc oxide layer 8 form a Schottky diode, and a positive voltage is applied to the Schottky electrode 3 to form a complete system.
In this embodiment, two grooves are symmetrically formed in the substrate layer 1, each groove has a length of 39 μm 19 μm 2.5 μm, the grooves are filled with indium gallium zinc oxide, the metal resonant ring 7 is etched on the surface of the substrate layer 1 after the grooves are filled, the capacitor is covered with indium gallium zinc oxide, and the metal resonant ring is wrapped by two layers of indium gallium zinc oxide to form the indium gallium zinc oxide layer 8.
In the embodiment, the substrate layer 1 is a high-resistance silicon substrate with the thickness of 200 μm, and the high-resistance silicon is undoped monocrystalline silicon; the total thickness of the indium gallium zinc oxide layer 8 is 5 μm, which is an amorphous material having semiconductor properties, wherein the elemental ratio of indium In, gallium Ga, zinc Zn is 1: 1.
Fig. 2 is a schematic diagram of a double-capacitor terahertz split ring resonator unit, and the preparation process is as follows:
1. the silicon substrate was cut, cleaned and etched to 39 μm 19 μm 2.5 μm recesses.
2. And filling the indium gallium zinc oxide into the groove to enable the groove to be flush with the silicon surface before etching after being filled.
3. The film was coated with 0.02 μmTi film, 0.3 μm gold film, and 0.03 μmPb film in this order. Au is a metamaterial unit main body material, and Ti is used for increasing the adhesion degree of Au and a silicon substrate; the Pb work function is small, so that the Schottky contact is suitable to be manufactured.
4. And etching the metal film plated on the dual-capacitor metal ring microstructure according to the designed dual-capacitor metal ring microstructure, and removing redundant metal films to obtain the resonant ring structure.
5. Indium Gallium Zinc Oxide (IGZO) of 2.5 μm was grown.
6. Only 39 μm 19 μm 2.5 μm IGZO of the capacitive part remained, and the rest was etched away. In this way a single metamaterial unit, i.e. an open loop resonator unit, is produced.
If the array is to be formed by etching, in step 4, the second microstrip gold wire 6-2 is etched together with the schottky electrode 3 and the metal resonance ring 7, the IGZO strip 4 is grown together when the indium gallium zinc oxide is grown in the fifth step, and the ohmic electrode 2 is etched after the sixth step. The remaining steps are the same as etching the metamaterial unit.
Fig. 3 is a three-dimensional view of a microstructure composed of a dual-capacitor metal resonance ring and an IGZO semiconductor, and the microstructure includes a metal resonance ring 7 and an IGZO 8, the metal resonance ring 7 is made of gold (Au), and includes two single-capacitor split-ring resonators for forming magnetic resonance, and a microstrip gold wire is fused in the middle portion to form electrical resonance. The IGZO wraps the opening part of the double-capacitance split-ring resonator to adjust the capacitance of the double-capacitance split-ring resonator, and the indium gallium zinc oxide covering the first microstrip gold wire 6-1 and the position near the first microstrip gold wire 6-1 is removed, so that the distance between the indium gallium zinc oxide and the first microstrip gold wire 6-1 is 1 mu m, and the influence of the first microstrip gold wire 6-1 on a semiconductor is prevented. The principle of the regulation is as follows: when the applied voltage is different, the conductivity of the semiconductor part in the Schottky diode is changed, the dielectric constant between the plates of the capacitor is changed, and the capacitance is in direct proportion to the dielectric constant between the plates. The capacitance change influences the electric coupling capacity of the metamaterial resonant ring on the terahertz, so that the scattering characteristic of the metamaterial on the terahertz is changed.
FIG. 1 is a schematic structural diagram of a terahertz metamaterial electrical control device. With the change of signal voltage, the modulation depth of the terahertz metamaterial is continuously changed.
FIG. 5a is a simulation graph of a metamaterial unit according to the present embodiment. As can be seen from the figure, when the conductivity is unchanged and is lower, the transmission of the terahertz electromagnetic wave at 0.3962THz is the lowest, and reaches-31.43 dB, and the transmission is larger than-10 dB in the rest wave bands, the difference reaches 20 dB, and good distinguishability is achieved. When the conductivity σ changes, only at the resonance frequency, S21With a significant change, whereas at non-resonance, S21The change is small, so that the conductivity can be verified for S21Due to the transmission coefficient: t ═ S21) 2. Here S21Is one of the S parameters, which indicates the forward transmission coefficients from port 1 to port 2 when port 2 is matched, port 1 being the input port and port 2 being the output port. Therefore, the transmission coefficient can be adjusted by changing the voltage, so that the adjustment of the terahertz wave of a specific frequency band can be realized.
As shown in fig. 5b, the structure of the control device of the terahertz metamaterial dual-capacitor open-ended resonant ring structure based on IGZO of the embodiment can control the transmission coefficient at the resonant frequency to 0.0007837, the dual-peak distance Δ f of the terahertz metamaterial is 0.13THz, which is obviously superior to the prior art, and the control within a narrow frequency range is realized.
Fig. 6 is a simulation curve of a metamaterial unit with different c values, where the conductivity σ is 0.16S/m, and we can see that when c is different, the resonance point of the unit is shifted (the c value is the length of a metal wire of a single-side capacitor):
the resonant frequency of c 28 μm decreases to c 23 μm, and the shift is Δ fc0.4526-0.3728-0.0798 THz, which is given by the ratio of the distance between the two peaks:
namely: when we adjust the value of c, we get a large frequency shift for the two peak separation that is more than half the two peak separation, which is equivalent to a large adjustment of the response wavelength in terms of frequency and wavelength.
Therefore, for terahertz waves with different frequencies, the resonance frequency can be changed by adjusting the c value, so that the terahertz waves with different frequencies can be regulated and controlled.
The above-mentioned embodiments are the default embodiments of the present invention, but the embodiments of the present invention are not limited thereto, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be regarded as equivalent replacements within the protection scope of the present invention.
Claims (6)
1. The utility model provides a two electric capacity terahertz metamaterial electricity accuse device structure which characterized in that: the micro-strip resonator comprises a substrate layer (1) and a micro-structure resonator array layer (5) composed of a metal resonance ring (7) and an indium gallium zinc oxide layer (8), wherein the metal resonance ring (7) is etched on the substrate layer (1) in a filling mode, and a first micro-strip gold wire (6-1) is arranged in the metal resonance ring (7); the Schottky electrode (3) is connected with the first microstrip gold wire (6-1) through a second microstrip gold wire (6-2); the Schottky diode further comprises an IGZO strip (4) which is in contact with the indium gallium zinc oxide layer (8) and an ohmic electrode (2) which is connected with the IGZO strip (4), wherein the Schottky electrode (3) and the ohmic electrode (2) are respectively positioned on two sides of the upper surface of the substrate layer (1).
2. The dual-capacitor terahertz metamaterial electric control device structure as claimed in claim 1, wherein the microstructure resonator array layer (5) is a dual-capacitor split-ring resonator array, and comprises a plurality of split-ring resonator units, each split-ring resonator unit comprises a metal resonance ring (7) and an indium gallium zinc oxide layer (8), the metal resonance ring (7) is a dual-capacitor split-ring resonator, and is formed by combining two single-capacitor split-ring resonators in a back-to-back manner, the two single-capacitor split-ring resonators are symmetrical with respect to a center line of the metal resonance ring (7), a microstrip gold wire (6-1) is etched at the center, and an opening of each single-capacitor split-ring resonator is wrapped in the indium gallium zinc oxide layer (8).
3. The dual-capacitor terahertz metamaterial voltage control device structure as claimed in claim 1, wherein each metal resonance ring (7) has a thickness of 0.3 μm and a width of 6 μm.
4. The dual-capacitor terahertz metamaterial voltage controller structure as claimed in claim 1, wherein the side length of the annular part of the metal resonance ring (7) is 66 μm, the length of the first microstrip gold wire (6-1) is 86 μm, and two ends of the first microstrip gold wire (6-1) extend out of the metal resonance ring (7).
5. The dual-capacitor terahertz metamaterial voltage control device structure as claimed in any one of claims 1 to 4, wherein two grooves are formed in the substrate layer (1) at the central symmetry position.
6. The dual-capacitor terahertz metamaterial electric control device structure as claimed in claim 5, wherein the groove is filled with indium gallium zinc oxide, the metal resonance ring (7) is etched on the plane after filling, the capacitor is covered with the indium gallium zinc oxide, and two layers of indium gallium zinc oxide are wrapped to form an indium gallium zinc oxide layer (8).
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