CN111443426A - Slow wave matching structure film type electro-optical modulator - Google Patents
Slow wave matching structure film type electro-optical modulator Download PDFInfo
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- CN111443426A CN111443426A CN202010270345.4A CN202010270345A CN111443426A CN 111443426 A CN111443426 A CN 111443426A CN 202010270345 A CN202010270345 A CN 202010270345A CN 111443426 A CN111443426 A CN 111443426A
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12045—Lithium tantalate (LiTaO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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Abstract
The invention discloses a film type electro-optic modulator with a slow wave matching structure, which comprises: the microwave coplanar waveguide structure comprises an optical waveguide structure consisting of a Y-branch input waveguide, a Y-branch output waveguide and a photonic crystal line defect waveguide, and a microwave coplanar waveguide structure consisting of a graded period capacitive load electrode. The photonic crystal line defect waveguide limits an optical field in a forbidden band region through introducing line defects, applies target displacement to a target row photonic crystal lattice of the photonic crystal line defect waveguide to regulate and control the optical wave group speed and/or obtain wide-spectrum slow light, and enhances electro-optic interaction to reduce half-wave voltage; the gradual change type periodic capacitive load electrode is used for slowing down the microwave wave speed to enable the microwave wave speed to be matched with the light wave group speed, so that a large bandwidth is obtained, the gradual change structure from the inductive area to the capacitive area is used for reducing microwave reflection, and the high-frequency characteristic is further improved. The optical waveguide structure is made of a high-dielectric-constant insulator electro-optic material film; the gradual-change type periodic capacitive load electrode structure is made of a high-conductivity metal material.
Description
Technical Field
The invention relates to the technical field of low half-wave voltage and ultrahigh-speed Mach-Zehnder electro-optic modulators, in particular to a slow-wave matching structure film type electro-optic modulator.
Background
Fiber optic communications is one of the major pillars of modern communications. With the explosive growth of data communication services, people put higher and higher requirements on communication bandwidth, and the single-wavelength bandwidth of the current optical fiber communication system is moving from 2.5Gb/s and 10Gb/s to higher bandwidth. Loading information onto the laser is divided into inner and outer modulations. The chirp caused by the internal modulation is large, its transmission distance is limited due to the dispersion effect of the fiber, and the modulation bandwidth is also not high. The external modulation mainly comprises an electro-absorption amplitude modulator and an electro-optic phase modulator, the electro-absorption modulator has large inherent loss, the modulator is easily saturated due to the shielding effect of a modulation electric field caused by a photon-generated carrier, and only amplitude change is difficult to apply to a high-level modulation format; the electro-optical modulator mainly comprises lithium niobate, organic polymers, semiconductors and the like, which cannot simultaneously meet the requirements of modern communication on large bandwidth, low half-wave voltage, low insertion loss, miniaturization and integration; the thin-film lithium niobate material is prepared by ion slicing and bonding processes, and has great potential in the aspect of electro-optical modulators.
In the related art, the thin film lithium niobate modulator generally adopts a traveling wave electrode structure, but the half-wave voltage and the bandwidth of the thin film lithium niobate modulator in the related art are contradictory, and the length of the device needs to be increased to reduce the half-wave voltage of the device, which increases the loss of high-frequency signals, so that the bandwidth of the device needs to be reduced.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
Therefore, the invention aims to provide a thin-film type electro-optical modulator with a slow wave matching structure, which can realize large bandwidth while greatly increasing electro-optical interaction, is expected to realize low half-wave voltage and ultrahigh bandwidth on a very small device length, and is simple and easy to realize.
In order to achieve the above object, an embodiment of the present invention provides a thin film type electro-optical modulator with a slow wave matching structure, including: a Y-branch input waveguide and a Y-branch output waveguide; the photonic crystal line defect waveguide is used for limiting an optical field in a forbidden band region through lead-in line defects and applying target displacement to a target row photonic crystal lattice of the photonic crystal line defect waveguide so as to regulate and control the optical wave group speed and/or obtain wide-spectrum slow light, wherein the Y-branch input waveguide, the Y-branch output waveguide and the photonic crystal line defect waveguide are all made of high-dielectric-constant insulator electro-optic material films, such as thin-film lithium niobate typically.
The slow wave matching structure thin-film type electro-optic modulator provided by the embodiment of the invention is based on a thin-film lithium niobate/lithium tantalate material system, the speed matching of microwave slow waves and light wave slow waves is realized by utilizing a periodic capacitive load electrode and a slow wave optical waveguide structure, the electro-optic interaction is enhanced to reduce half-wave voltage, a graded periodic capacitive load electrode is used for slowing the microwave wave speed to match with the light wave group speed so as to obtain a large bandwidth, a graded structure from a sensitive area to a capacitive area is used for reducing microwave reflection, the high-frequency characteristic is further improved, the large bandwidth is realized while the electro-optic interaction is greatly increased, and finally the electro-optic modulator with the large bandwidth and the low half-wave voltage is obtained.
In addition, the slow-wave matching structure thin-film type electro-optical modulator according to the above embodiment of the present invention may further have the following additional technical features:
further, in one embodiment of the present invention, the high-k insulator electro-optic material film comprises: perovskite (ABO)3) Form crystals, typically lithium niobate (L iNbO)3) Crystal (relative dielectric constant 28) and lithium tantalate (L iTaO)3) Crystal (relative permittivity 44); KDP type crystals, typically monopotassium phosphate (KH2PO4) crystals (relative dielectric constant 20); sphalerite type crystals.
Further, in one embodiment of the present invention, the high permittivity insulator electro-optic material film has a microwave relative permittivity greater than 20.
Further, in one embodiment of the present invention, the photonic crystal line defect waveguide is an air hole or dielectric hole type photonic crystal line defect waveguide.
Further, in an embodiment of the present invention, the modulator employs a periodic capacitive load electrode structure, wherein the periodic capacitive load electrode structure gradually loads the T-shaped electrode according to the requirement of slow wave.
Further, in an embodiment of the present invention, wherein a transition structure is added in the main electrode region and the T-shaped electrode region.
Further, in an embodiment of the present invention, the transition structure adopts a linear, an arc or a function curve satisfying a preset condition to perform inductive-to-capacitive transition from the non-loading region to the loading region.
Further, in an embodiment of the present invention, the method further includes: and the controller is used for adjusting the slow optical group speed by finely adjusting the working optical wavelength to match with the microwave phase speed close to the Bragg boundary, so that a larger modulator bandwidth is obtained.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a slow-wave matching structure thin-film type electro-optic modulator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a G-S-G electrode structure according to an embodiment of the invention;
FIG. 3 is a diagram illustrating the effect of a novel gradual change structure according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a slow-wave matching structure thin-film type electro-optic modulator according to a first embodiment of the present invention;
FIG. 5 is a diagram showing a dispersion curve and a broad-spectrum slow light region of a photonic crystal waveguide according to a first embodiment of the present invention;
FIG. 6 is a graph of the effective refractive index curve and the normalized frequency response obtained under the optimized parameters of the slow-wave electrode according to the first embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a slow-wave matching structure thin-film type electro-optic modulator according to a second embodiment of the present invention;
FIG. 8 is a diagram showing a dispersion curve and a broad-spectrum slow light region of a photonic crystal waveguide according to a second embodiment of the present invention;
FIG. 9 is a graph of the effective refractive index curve and the normalized frequency response obtained under the optimized parameters of the slow-wave electrode according to the first embodiment of the present invention;
FIG. 10 is a diagram illustrating a waveguide structure replaced with a grating waveguide slow wave structure according to a third embodiment of the present invention;
fig. 11 is a diagram illustrating a waveguide structure replaced with a curved waveguide slow wave structure according to a fourth embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The present application is based on the recognition and discovery by the inventors of the following problems:
according to the description of the background art, the theoretical limit of performance of the thin-film lithium niobate modulator reported at present exists, and aiming at the problem, the embodiment of the invention adopts a method for matching an optical wave slow-wave structure and a microwave slow-wave structure, provides the slow-wave matching structure electro-optical modulator based on the thin-film lithium niobate, and is expected to realize low half-wave voltage and ultrahigh bandwidth on a very small device length.
The embodiment of the invention adopts an optical slow wave waveguide structure and aims to: the optical slow wave structure can enhance the electro-optic effect by the enhancement factor of
Wherein
Is the optical wave group velocity of the bulk material,
is the optical group velocity in the slow wave waveguide.
However, the currently reported photonic crystal electro-optic modulator generally uses silicon-based materials and adopts a lumped electrode structure, and the bandwidth of the photonic crystal electro-optic modulator is limited by the optical wave transit time and the RC time constant, so that the requirement of large bandwidth cannot be met. The embodiment of the invention adopts a thin-film lithium niobate/lithium tantalate platform and uses a traveling wave electrode structure. It has the advantages that: the electro-optic coefficient of the lithium niobate is very high and can reach 29pm/v under the communication wavelength of 1550 nm; secondly, the microwave dielectric constant of lithium niobate is very high (28), and the matching of the microwave and the light wave slow wave speed is easily realized by matching with a periodic capacitive load electrode; the adoption of the thin-film lithium niobate material is easy to manufacture slow-wave structures such as photonic crystal line defect waveguides and the like, and the limitation to light is enhanced; and lithium niobate is an insulator, and the periodic capacitive load electrode structure manufactured on the lithium niobate does not need to be electrically isolated between load electrodes.
A slow wave matching structure thin film type electro-optical modulator proposed according to an embodiment of the present invention is described below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a slow-wave matching structure thin-film type electro-optic modulator according to an embodiment of the present invention.
As shown in fig. 1, the slow wave matching structure thin film type electro-optical modulator includes: y-branch input waveguide, Y-branch output waveguide and photonic crystal line defect waveguide.
The photonic crystal line defect waveguide is used for limiting an optical field in a forbidden band region through introducing line defects, and applying target displacement to a target row photonic crystal lattice of the photonic crystal line defect waveguide to regulate and control the optical wave group speed and/or obtain wide-spectrum slow light (slow light group refractive index n)g>Bulk material optical group refractive index nbulk) And the Y-branch input waveguide, the Y-branch output waveguide and the photonic crystal line defect waveguide are all made of insulator electro-optic material films with high dielectric constants (the microwave relative dielectric constant is more than 20). Hair brushThe modulator of the embodiment of the invention can realize large bandwidth while greatly increasing electro-optical interaction, is expected to realize low half-wave voltage and ultrahigh bandwidth on very small device length, and is simple and easy to realize.
It can be understood that the modulator of the embodiment of the invention comprises an optical waveguide structure consisting of a Y-branch input waveguide, a Y-branch output waveguide and a photonic crystal line defect waveguide, and a microwave coplanar waveguide structure consisting of a graded-period capacitive load electrode. The photonic crystal line defect waveguide limits an optical field in a forbidden band region through introducing line defects, and applies target displacement to a target row photonic crystal lattice of the photonic crystal line defect waveguide to regulate and control the optical wave group speed and/or obtain wide-spectrum slow light and enhance electro-optic interaction to reduce half-wave voltage; the gradual change type periodic capacitive load electrode is used for slowing down the microwave wave speed to enable the microwave wave speed to be matched with the light wave group speed, so that a large bandwidth is obtained, the gradual change structure from the inductive area to the capacitive area is used for reducing microwave reflection, and the high-frequency characteristic is further improved. The Y-branch input waveguide, the Y-branch output waveguide and the photonic crystal line defect waveguide are all made of high-dielectric-constant insulator electro-optic material films; the gradual-change type periodic capacitive load electrode structure is made of a high-conductivity metal material.
Wherein the high dielectric constant insulator electro-optic material film mainly comprises: perovskite (ABO)3) Form crystals, typically lithium niobate (L iNbO)3) Crystal (relative dielectric constant 28) and lithium tantalate (L iTaO)3) Crystal (relative permittivity 44); KDP type crystals, typically monopotassium phosphate (KH2PO4) crystals (relative dielectric constant 20); sphalerite type crystals.
Specifically, as shown in fig. 1, fig. 1(a) is a top view of the overall structure of the device, and mainly includes the following parts: y branch input waveguide, Y branch output waveguide and photonic crystal line defect waveguide, and these optical waveguide structures are based on lithium niobate/lithium tantalate film material system. The photonic crystal line defect waveguide adopts an air hole type photonic crystal, and the optical field in a forbidden band region is limited by introducing line defects. Wherein the air holes may be filled with a low dielectric constant material such as silicon dioxide. By aligning the n-th row photonic crystal latticeApplying a displacement XnThe method can regulate and control the group velocity of the optical waves and obtain the broad-spectrum slow light.
Further, in an embodiment of the present invention, the modulator employs a periodic capacitive load electrode structure, wherein the periodic capacitive load electrode structure gradually loads the T-type electrode according to the requirement of slow waves, transition structures are added in the main electrode region and the T-type electrode region, and the transition structures employ linear, arc or function curves meeting preset conditions to perform inductive-to-capacitive transition from the non-loading region to the loading region.
Specifically, the electrode structure adopts a G-S-G electrode parallel push-pull form, and is different from the traditional G-S-G electrode structure such as a figure 2(a), the invention adopts a novel periodic capacitive load electrode structure, and the periodic capacitive load electrode structure figure 2(b) refers to: the T-shaped electrode is periodically loaded on the basis of the traditional G-S-G electrode structure, when the distance between a signal line and a ground wire is larger, better electric field loading is realized due to the T-shaped electrode, meanwhile, the conduction current along the transmission line is reduced, and the microwave loss is reduced. And the periodic capacitive load electrode structure can realize microwave slow wave transmission so as to realize the matching with the optical wave group velocity.
However, as the wave velocity is reduced, the reflection of the conventional capacitive load electrode increases, which greatly affects the high-frequency characteristics of the device. The reflection of the slow wave is mainly from the impedance mismatch between a loaded area and an unloaded area, and therefore, a periodic capacitive load electrode structure diagram 2(c) of a gradually-changing loaded T-shaped electrode is designed to meet the requirement of the scheme of the embodiment of the slow wave. The obtained effect is shown in fig. 3, and the embodiment of the invention adopts a novel gradual change structure to reduce the electrode reflection by more than 10 dB.
Further, in an embodiment of the present invention, the modulator of the embodiment of the present invention further includes: and a controller. The controller adjusts the slow optical group speed by finely adjusting the working optical wavelength to match with the microwave phase speed close to the Bragg boundary, so that larger modulator bandwidth is obtained.
Specifically, in order to obtain a further microwave slow wave, the embodiment of the present invention utilizes the characteristic that the refractive index of the microwave is increased near the microwave bragg frequency, and performs the velocity matching between the optical wave and the microwave in the region near the microwave bragg frequency, thereby further increasing the bandwidth of the device.
The slow-wave matching structure thin-film type electro-optic modulator will be further described by the following specific embodiments.
Example one
Adopting a lithium niobate thin film with a substrate material of lithium niobate, using a triangular lattice air hole type lithium niobate photonic crystal waveguide, respectively displacing the first air discharge holes close to the two sides of the waveguide in two opposite directions by deta, and showing hole period and radius parameters in a figure and a table; a periodic capacitive load structure with an elliptic arc gradual change in a loading area is adopted in the aspect of an electrode, and the main parameters and the cross section size of the whole device are shown in figure 4 and table 1.
TABLE 1
As shown on the left side of the dispersion curve 5 of the photonic crystal waveguide obtained by optimizing the optical waveguide parameters, a wide-spectrum slow light region as shown on the right side of fig. 5 can be constructed, and the refractive index of the corresponding optical wave group is 6.
The effective refractive index curve and the normalized frequency response obtained under the optimized slow wave electrode parameters are shown in fig. 6, the microwave refractive index is gradually increased in a high-frequency region, the effective refractive index of the microwave at 150GHz is 6 through the optimized parameters under the conditions that the length of the whole device is 2mm and the T-shaped electrode interval is 3um, namely, the effective refractive index is matched with the refractive index of the optical wave group, and the bandwidth of the device with the frequency of more than 160GHz can be realized. The estimated half-wave voltage is 2V.
Example two
Adopting a substrate material of a lithium niobate thin film of lithium niobate, filling triangular lattice air holes with silicon dioxide to realize photonic crystal line defect waveguide, respectively displacing the first rows of air holes close to two sides of the waveguide in two opposite directions to deta, and showing hole period and radius parameters in a figure and a table; the electrode aspect adopts a periodic capacitive load structure with an elliptical arc gradual change in a loading area, and the main parameters and the overall device cross section size are shown in fig. 7 and table 2.
TABLE 2
As shown on the left side of the dispersion curve 8 of the photonic crystal waveguide obtained under the optimized optical waveguide parameters, a wide-spectrum slow light region as shown on the right side of fig. 8 can be constructed, and the refractive index of the corresponding light wave group is 6.
The effective refractive index curve and the normalized frequency response obtained under the optimized slow wave electrode parameters are shown in fig. 9, the microwave refractive index is gradually increased in a high-frequency region, the effective refractive index of the microwave at 150GHz is 6 through the optimized parameters under the conditions that the length of the whole device is 2mm and the T-shaped electrode distance is 3um, namely, the effective refractive index is matched with the refractive index of the optical wave group, and the bandwidth of the device with the frequency of more than 160GHz can be realized. The estimated half-wave voltage is 2V.
Example three: as shown in fig. 10, the waveguide structure in the above embodiment may be replaced with a grating waveguide slow-wave structure.
Example four: as shown in fig. 11, the waveguide structure in the above embodiment may be replaced with a curved waveguide slow wave structure.
Example five: the material for preparing the optical waveguide in the above example was changed to lithium tantalate.
To sum up, the slow wave matching structure film type electro-optic modulator provided by the embodiment of the invention is based on a high dielectric constant insulator electro-optic film material system, utilizes the periodic capacitive load electrode and the slow wave optical waveguide structure to realize the speed matching of the microwave slow wave and the optical wave slow wave, enhances the electro-optic interaction to reduce the half-wave voltage, the graded periodic capacitive load electrode is used for slowing the speed of the microwave wave to match the speed of the optical wave group so as to obtain a large bandwidth, and the graded structure from the inductive area to the capacitive area is used for reducing the microwave reflection to further improve the high-frequency characteristic, so that the large bandwidth is realized while the electro-optic interaction is greatly increased, and finally the electro-optic modulator with the large bandwidth and the low half-wave voltage is obtained.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (8)
1. A thin film type electro-optic modulator of slow wave matching structure, comprising:
a Y-branch input waveguide and a Y-branch output waveguide;
the photonic crystal line defect waveguide is used for limiting an optical field in a forbidden band region through lead-in line defects and applying target displacement to a target row photonic crystal lattice of the photonic crystal line defect waveguide so as to regulate and control the optical wave group speed and/or obtain wide-spectrum slow light, wherein the Y-branch input waveguide, the Y-branch output waveguide and the photonic crystal line defect waveguide are all made of high-dielectric-constant insulator electro-optic material films.
2. The slow wave matching structure thin film type electro-optic modulator of claim 1, wherein the thin film of high dielectric constant insulator electro-optic material comprises: perovskite (ABO)3) Form crystals, typically lithium niobate (L iNbO)3) And lithium tantalate (L iTaO)3) A crystal; crystals of the KDP type, typically monopotassium phosphate (KH2PO4) crystals; sphalerite type crystals.
3. The slow wave matching structure film type electro-optic modulator of claim 1 or 2, wherein the high dielectric constant microwave has a relative dielectric constant greater than 20.
4. The slow wave matching structure thin film type electro-optic modulator of claim 1, wherein the photonic crystal line defect waveguide is an air hole or dielectric hole type photonic crystal line defect waveguide.
5. The slow wave matching structure film type electro-optic modulator of claim 4, wherein said modulator employs a periodic capacitive loading electrode structure, wherein said periodic capacitive loading electrode structure gradually loads T-shaped electrodes according to slow wave requirements.
6. The slow wave matching structure thin film type electro-optic modulator of claim 5, wherein transition structures are added to the main electrode region and the T-shaped electrode region.
7. The slow wave matching structure thin film type electro-optic modulator of claim 5, wherein the transition structure employs a linear, an arc or a function curve satisfying a predetermined condition to perform an inductive-to-capacitive transition from a non-loaded region to a loaded region.
8. The slow wave matching structure thin film type electro-optic modulator of claim 1, further comprising: and the controller is used for adjusting the slow optical group speed by finely adjusting the working optical wavelength to match with the microwave phase speed close to the Bragg boundary, so that a larger modulator bandwidth is obtained.
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| CN113311599A (en) * | 2021-05-19 | 2021-08-27 | 清华大学 | High-speed integrated optical modulator, modulation method and modulation system |
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