CN111244635A - Metamaterial wave absorber - Google Patents
Metamaterial wave absorber Download PDFInfo
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- CN111244635A CN111244635A CN202010042698.9A CN202010042698A CN111244635A CN 111244635 A CN111244635 A CN 111244635A CN 202010042698 A CN202010042698 A CN 202010042698A CN 111244635 A CN111244635 A CN 111244635A
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- wave absorber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a metamaterial wave absorber, which consists of a plurality of periodic units, wherein each periodic unit comprises: the metal layer is positioned at the bottommost layer, the dielectric layer is positioned right above the metal layer, and the metal patch is positioned right above the dielectric layer and is mixed with the semiconductor material to form a mixed layer; the mixed layer is positioned right above the dielectric layer, and semiconductor materials are filled in the mixed layer except the metal patch, wherein a gap is formed between the semiconductor materials and the metal patch structure; when electromagnetic waves are incident to the surface of the metamaterial wave absorbing body, electromagnetic coupling interaction is generated between the metal patch and the semiconductor material; the perfect absorption of electromagnetic waves with a certain specific frequency can be realized by reasonably designing the period size and the geometric parameters of the unit structure. The metamaterial wave absorber has the advantages of simple structure, small volume, broadband, high absorption and the like, and is insensitive to the wide incident angle and polarization of incident electromagnetic waves.
Description
Technical Field
The invention relates to the technical field of electromagnetic wave absorption and shielding, in particular to a metamaterial wave absorber.
Background
In recent years, metamaterials have attracted extensive attention due to their novel physical effects and potential application values, and are applied to many new fields such as negative refraction materials, stealth coats, perfect lenses and the like. The electromagnetic properties of the metamaterial are expressed by equivalent dielectric constant and equivalent magnetic permeability according to equivalent medium theory. The period size and the geometric parameters of the metamaterial are reasonably designed to enable the metamaterial and incident electromagnetic waves to respectively generate electric resonance and magnetic resonance, so that the equivalent dielectric constant and the equivalent magnetic permeability of the metamaterial are correspondingly controlled. The equivalent impedance of the metamaterial can be matched with the impedance of air by modulating the equivalent dielectric constant and the equivalent magnetic conductivity of the metamaterial, so that the effect of zero reflection is achieved, and meanwhile, the thickness of the bottom layer metal is larger than the skin depth of the electromagnetic wave, so that the transmission is zero, and the perfect absorption of the incident electromagnetic wave is realized.
Landy et al developed a metamaterial absorber that neither reflects nor transmits electromagnetic waves incident on its surface to the scientific standard of complete absorption of electromagnetic waves in 2008. However, the metamaterial wave absorber proposed by Landy has the following two problems; 1) the direction of the electric field of the incident electromagnetic wave is required to remain parallel to the resonator copper line direction to excite magnetic resonance. When the direction of the electric field is vertical to the copper wire, the copper wire has almost no wave absorption property, namely is sensitive to the polarization direction of incident electromagnetic waves; 2) perfect absorption of incident electromagnetic waves can only be achieved over a very narrow frequency band. Therefore, the application value is greatly limited.
Disclosure of Invention
The invention aims to provide a metamaterial wave absorber to solve the problems of narrow working bandwidth, sensitivity to the polarization direction of incident electromagnetic waves and low incident angle of the traditional metamaterial wave absorber.
In order to achieve the purpose, the invention provides the following scheme:
a metamaterial wave absorber, comprising:
the metamaterial wave absorber is of a periodic structure, and each wave absorber is composed of M multiplied by N periodic units;
the metamaterial wave absorbing body periodic unit comprises a three-layer structure: the semiconductor chip comprises a bottom metal layer, a dielectric layer positioned right above the bottom metal layer, and a mixed layer consisting of a surface metal patch positioned right above the dielectric layer and a semiconductor material;
in the wave-absorbing body period unit structure, the thickness of the bottom metal layer is more than or equal to 0.1um (more than the skin depth of the infrared band electromagnetic wave in the bottom metal layer);
the dielectric layer of the metamaterial wave absorber is made of a loss material, and the thickness range of the dielectric layer is 0.1-0.3 um;
the mixed layer composed of the metal patch of the metamaterial wave absorber and the semiconductor material has the same thickness as the semiconductor material, and the thickness range of the metal patch is 0.03-0.05 um;
the periodic unit structure of the metamaterial wave absorber is square, and the unit side length is 10 microns;
the mixed layer of the metamaterial wave absorber consists of a metal patch and a semiconductor material; the metal patch right above the dielectric layer is an opening resonance ring with a symmetrical structure, the opening resonance ring is provided with four openings with the same width and is positioned at four corners of the square unit, the direction of the openings and the horizontal direction form an angle of 45 degrees, and the width range of the openings is 0.4-0.7 um;
the opening resonance ring on the surface layer of the metamaterial wave absorber is provided with a vertical edge arm on each opening, and the length and the width of each edge arm are respectively 1.8um and 0.5um-0.7 um; the middle of the metal patch positioned right above the dielectric layer is provided with a cross structure which is formed by combining two same rectangles, and the length and width ranges of the rectangles are respectively 2.2um-2.5um and 0.5um-0.7 um;
the semiconductor material is filled in the part except the metal patch of the metal patch mixed layer positioned right above the dielectric layer, wherein the semiconductor material and the metal patch structure are spaced, and the spacing width is 0.1 um;
optionally, the metamaterial wave absorbing body periodic unit includes a three-layer structure, wherein the metal layer located right below the dielectric layer and the metal patch layer located right above the dielectric layer are made of one of gold, silver and copper.
Optionally, the semiconductor material directly above the dielectric layer is one of indium antimonide (InSb), aluminum nitride (AlN) and gallium arsenide (GaAs).
Optionally, the material of the intermediate dielectric layer is FR4 dielectric plate, the relative dielectric constant is 4.3, and the tangent value of the loss angle is 0.025.
Optionally, the structural parameters of the metamaterial wave absorber are changed, so that the resonance point of the metamaterial wave absorber can move to high frequency or low frequency.
According to the specific embodiment provided by the invention, the invention provides a metamaterial wave absorber which is composed of a plurality of periodic units, wherein each periodic unit comprises a metal layer positioned at the bottommost layer, a dielectric layer positioned right above the metal layer and a metal patch and semiconductor material mixed layer positioned right above the dielectric layer; the mixed layer positioned right above the dielectric layer is filled with semiconductor materials except for the metal patch, wherein a gap is formed between the semiconductor materials and the metal patch structure; when electromagnetic waves are incident to the surface of the metamaterial wave-absorbing body, the metal patch and the semiconductor material interact to generate electromagnetic coupling; the wave absorber can realize ultrahigh absorption at any frequency within the range of 98THz-152THz, and the absorption rate can reach 99.9 percent at most. Meanwhile, the resonance structure resonates under the wave frequency of the electromagnetic waves, a magnetic field loop is generated around the resonance structure, the magnetic field loop enables the metal sheet and the dielectric plate to generate current, so that the dielectric plate generates dielectric loss, ohmic loss can be generated on the metal sheet, electromagnetic energy of the electromagnetic waves is converted into heat energy through loss, loss absorption of incident electromagnetic waves is achieved, the wave absorber has an absorption effect on incident waves in different polarization directions, and the problem that the wave absorber is sensitive to the polarization directions of the incident waves is solved. The metamaterial wave absorber has wide frequency band and high absorption performance, can realize wide incidence angle and insensitive polarization, has simple structure and small volume, and solves the problems of large thickness, narrow absorption frequency band and small incidence angle of the conventional wave absorber.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a periodic unit of a metamaterial wave-absorbing body according to an embodiment of the invention.
FIG. 2 is a schematic diagram of a hybrid layer structure of a periodic unit of a metamaterial absorber according to an embodiment of the invention.
Fig. 3 is a reflection graph (ordinate S11 is input reflection coefficient) of the mixed layer of the metamaterial absorber periodic unit doped with different semiconductor materials (indium antimonide (InSb), aluminum nitride (AlN) and gallium arsenide (GaAs)) according to the embodiment of the present invention.
FIG. 4 is a reflection curve diagram of a metamaterial wave absorber according to an embodiment of the invention.
FIG. 5 is a reflection curve diagram of a metamaterial wave absorber without semiconductor material according to an embodiment of the invention.
FIG. 6 is a reflection curve diagram of the metamaterial wave absorber under different polarization angles according to the embodiment of the invention.
FIG. 7 is a reflection curve diagram of a metamaterial wave absorber according to an embodiment of the invention at different incident angles.
FIG. 8 is a reflection curve diagram of a metamaterial wave absorber according to an embodiment of the present invention after structure parameters are scaled.
The structure comprises a metal layer 1, a dielectric layer 2, a mixed layer 3, a resonant ring 4, a prism arm 5, a semiconductor material 6, a cross structure 7 and a space between the semiconductor material and a metal patch structure 8.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a metamaterial wave absorber, which has the characteristics of polarization insensitivity, wide frequency band and wide incidence angle.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
A metamaterial wave absorber, comprising:
as shown in fig. 1, the metamaterial wave absorber is a periodic structure, each periodic unit structure of the wave absorber is square, and the unit side length is 10 um; each wave absorbing body periodic unit comprises a three-layer structure: the thickness of the bottom metal layer 1 is 0.1um and is larger than the skin depth of the infrared band electromagnetic wave in the bottom metal layer; the dielectric layer 2 is positioned right above the bottom metal layer, and the dielectric layer 2 is made of loss materials and is 0.2um thick; the surface layer which is positioned right above the dielectric layer 2 is a mixed layer 3 consisting of the metal patch and the semiconductor material, and the thickness of the mixed layer is 0.04 um;
as shown in fig. 2, the mixed layer 3 of the metamaterial absorber is composed of a metal patch and a semiconductor material 6; the metal patch comprises a resonance ring 4, a prismatic arm 5 and a cross structure 7; the resonance ring 4 is provided with four openings with the same width and is positioned at four corners of the square unit, the direction of the openings and the horizontal direction form an angle of 45 degrees, and the width of each opening is 0.55 um; the edge arm 5 and the resonance ring 4 are in cross connection and the direction points to the inside of the ring, and the length and the width of the edge arm 5 are respectively 1.8um and 0.6 um; the cross structure 7 is positioned in the right center of the wave absorbing body periodic unit and is formed by orthogonal two same rectangles, and the length and the width of each rectangle are respectively 2.4um and 0.65 um; the mixed layer 3 is filled with a semiconductor material 6 except for the metal patch, wherein the interval between the semiconductor material and the metal patch structure is 8, and the interval width is 0.1 um.
In practical application, the metamaterial wave absorber is of a three-layer structure, and the metal layer 1 and the metal patch in the mixed layer are made of copper. In practical application, the semiconductor material in the mixed layer 3 is gallium arsenide (GaAs).
In practical application, the material of the dielectric layer 2 is FR4 dielectric board, the dielectric constant of which is 4.3, and the tangent value of the loss angle is 0.025.
In practical applications, the absorption effect may vary by changing the semiconductor material composition in the mixed layer 3, such as indium antimonide (InSb), aluminum nitride (AlN) and gallium arsenide (GaAs).
In practical application, the resonance point of the metamaterial wave absorber can be moved to high frequency or low frequency by changing the structural parameters of the metamaterial wave absorber.
A method for moving a resonance point of a metamaterial wave absorber to high frequency or low frequency comprises the following steps:
in practical application, the resonance point of the metamaterial wave absorber can be moved to high frequency or low frequency by changing the structural parameters of the metamaterial wave absorber. Under the condition that the structure and the material collocation are not changed, the metamaterial unit structure is scaled down or enlarged, and the metamaterial structure meeting the impedance matching condition still meets the impedance matching condition after the whole proportion is changed. The resonance point frequency of the wave absorber after adjustment is inversely proportional to the multiple of the size change, and the metamaterial wave absorber can still achieve the effect of broadband absorption.
Scaling the structure in equal proportion according to the principle;
in practical application, specifically, under the condition that the structure and the material collocation of the metamaterial wave absorber are not changed, the size of the structural unit of the metamaterial wave absorber is integrally enlarged by 1000 times, for example, the three-layer structure of the metamaterial wave absorber in fig. 1 and 2 is not changed, and the structure of the metal patch and the semiconductor material on the surface layer is not changed.
Therefore, the invention can achieve the following effects:
as shown in fig. 3, the hybrid layer of the metamaterial absorber in the present invention is doped with different semiconductor materials, and still can achieve the absorption effect of the ultra-wide band.
As shown in fig. 4, the reflection curve of the metamaterial absorber in the present invention. The wave absorber can realize ultrahigh absorption at any frequency within the range of 98THz-152THz waves, and the highest absorption rate can reach 99.9%. With the same structural parameters, if only the metal patch is in the surface layer and the semiconductor material is not doped, the reflection curve is as shown in fig. 5, and the absorption effect is greatly reduced.
As shown in FIG. 6, the metamaterial absorber has polarization insensitive characteristic, and its absorption rate and resonant wavelength hardly change when different polarized waves are incident.
As shown in fig. 7, the metamaterial absorber has a wide incident angle characteristic, and when the incident angle is less than 60 degrees, the absorption rate is 80% or more regardless of TE wave incidence or TM wave incidence.
The metamaterial wave absorber can also regulate and control the frequency of a resonance point by changing the size parameters of the wave absorber unit, so that ultra-wideband absorption under different frequencies can be realized, and the metamaterial wave absorber has ultrahigh absorption rate. Fig. 8 is a reflection curve of the wave absorber obtained by changing only the unit parameters of the wave absorber, i.e., the parameters of the same scaling size, without changing the structure of the wave absorber, which can achieve ultra-high absorption at any frequency within the wave range of 98 GHz-152 GHz, and the absorption rate can reach 99.9% at most.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (5)
1. A metamaterial wave absorber, comprising:
the metamaterial wave absorber is of a periodic structure, and each wave absorber is composed of M multiplied by N periodic units;
the metamaterial wave absorbing body periodic unit comprises a three-layer structure: the metal patch comprises a bottom metal layer, a dielectric layer positioned right above the bottom metal layer and a mixed layer which is positioned right above the dielectric layer and consists of metal patches and semiconductor materials;
in the metamaterial wave-absorbing body periodic unit structure, the thickness of the bottom metal layer is more than or equal to 0.1 um;
the dielectric layer of the metamaterial wave absorber is made of a loss material, and the thickness range of the dielectric layer is 0.1-0.3 um;
the mixed layer of the metamaterial wave absorber consists of a metal patch and a semiconductor material, wherein the thickness of the metal patch is the same as that of the semiconductor material, and the thickness range of the metal patch is 0.03-0.05 um;
the periodic unit structure of the metamaterial wave absorber is square, and the unit side length is 10 microns;
the metal patch of the metamaterial wave absorbing body mixing layer consists of a resonant ring, a prismatic arm and a cross structure;
the resonant ring of the metamaterial wave absorber is provided with four openings with the same width and positioned at four corners of the square unit, the direction of the openings and the horizontal direction form an angle of 45 degrees, and the width range of the openings is 0.4-0.7 um;
the prism arms of the metamaterial wave absorber are in cross connection with the resonance ring of the metamaterial wave absorber, the directions of the prism arms point to the inside of the ring, and the length and the width of the prism arms are respectively 1.8um and 0.5um-0.7 um; the cross structure of the metamaterial wave absorber is positioned in the positive center of the periodic unit of the metamaterial wave absorber and is formed by orthogonal two identical rectangles, and the length and width of each rectangle are respectively 2.2-2.5 um and 0.5-0.7 um;
the mixed layer of the metamaterial wave absorber is filled with a semiconductor material except for the metal patch, wherein the semiconductor material and the metal patch structure are spaced, and the spacing width is 0.1 um.
2. The metamaterial wave absorber of claim 1, wherein the periodic unit of the metamaterial wave absorber comprises a three-layer structure, wherein the metal layer directly below the dielectric layer and the metal patch layer directly above the dielectric layer are made of one of gold, silver and copper.
3. The metamaterial wave absorber of claim 1, wherein the semiconductor material directly above the dielectric layer is one of indium antimonide, aluminum nitride, and gallium arsenide.
4. The metamaterial wave absorber of claim 1, wherein the intermediate dielectric layer is made of FR4 dielectric sheets with a relative dielectric constant of 4.3 and a loss tangent of 0.025.
5. The metamaterial wave absorber of claim 1, wherein the structural parameters of the metamaterial wave absorber are changed to realize that the resonance point of the metamaterial wave absorber moves to a high frequency or a low frequency.
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Cited By (8)
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| CN111929753A (en) * | 2020-06-22 | 2020-11-13 | 东南大学 | Wide-band metamaterial absorber compatible with CMOS (complementary metal oxide semiconductor) process |
| CN112134026A (en) * | 2020-09-25 | 2020-12-25 | 合肥工业大学 | Multi-frequency metamaterial wave absorbing body with three-dimensional structure |
| CN112702900A (en) * | 2020-11-24 | 2021-04-23 | 南京航空航天大学 | Metamaterial wave absorber |
| CN113015424A (en) * | 2021-04-06 | 2021-06-22 | 浙江师范大学 | Superstructure millimeter wave absorbing plate and application thereof |
| CN113109635A (en) * | 2021-05-22 | 2021-07-13 | 深圳市通用测试系统有限公司 | Reflecting surface and compact range measuring system with same |
| CN114144053A (en) * | 2021-12-20 | 2022-03-04 | 重庆邮电大学 | Composite wave absorber with dual dynamic regulation and control functions and preparation method and application thereof |
| CN114619718A (en) * | 2020-12-10 | 2022-06-14 | 南京航空航天大学 | Broadband wave-absorbing composite material and preparation method thereof |
| CN115561845A (en) * | 2022-09-16 | 2023-01-03 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111929753A (en) * | 2020-06-22 | 2020-11-13 | 东南大学 | Wide-band metamaterial absorber compatible with CMOS (complementary metal oxide semiconductor) process |
| CN112134026A (en) * | 2020-09-25 | 2020-12-25 | 合肥工业大学 | Multi-frequency metamaterial wave absorbing body with three-dimensional structure |
| CN112702900A (en) * | 2020-11-24 | 2021-04-23 | 南京航空航天大学 | Metamaterial wave absorber |
| CN114619718A (en) * | 2020-12-10 | 2022-06-14 | 南京航空航天大学 | Broadband wave-absorbing composite material and preparation method thereof |
| CN113015424A (en) * | 2021-04-06 | 2021-06-22 | 浙江师范大学 | Superstructure millimeter wave absorbing plate and application thereof |
| CN113109635A (en) * | 2021-05-22 | 2021-07-13 | 深圳市通用测试系统有限公司 | Reflecting surface and compact range measuring system with same |
| CN114144053A (en) * | 2021-12-20 | 2022-03-04 | 重庆邮电大学 | Composite wave absorber with dual dynamic regulation and control functions and preparation method and application thereof |
| CN114144053B (en) * | 2021-12-20 | 2024-04-12 | 重庆邮电大学 | Composite wave absorber with dual dynamic regulation and control and preparation method and application thereof |
| CN115561845A (en) * | 2022-09-16 | 2023-01-03 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
| CN115561845B (en) * | 2022-09-16 | 2024-04-30 | 合肥工业大学 | Optical band broadband metamaterial wave absorber |
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