CN105305091A - Tunable gradient meta-surface-based reflection electromagnetic wave modulator and design method thereof - Google Patents

Tunable gradient meta-surface-based reflection electromagnetic wave modulator and design method thereof Download PDF

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CN105305091A
CN105305091A CN201510658064.5A CN201510658064A CN105305091A CN 105305091 A CN105305091 A CN 105305091A CN 201510658064 A CN201510658064 A CN 201510658064A CN 105305091 A CN105305091 A CN 105305091A
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许河秀
汤世伟
马少杰
蔡通
孙树林
周磊
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Fudan University
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Abstract

本发明属于反射体系技术领域,具体为一种基于宽带可调梯度超表面的反射电磁波调制器及其设计方法。本发明的反射电磁波调制器(宽带TGMS)由超单元在二维平面内周期延拓构成;超单元则由6个具有不同结构参数、相位的TGMS单元按尺寸大小顺序排列组成,具有宽带相位梯度;而TGMS单元主要由上层主谐振器和副谐振器、中间介质板和下层金属接地板三部分组成;本发明通过在梯度超表面单元中引入变容二极管和双谐振结构,实现了对相位色散的补偿和相位的连续调控;表面波转换到波束偏折功能的切换且波束偏折在很宽的频带范围内具有非常高的转换效率。

The invention belongs to the technical field of reflection systems, in particular to a reflective electromagnetic wave modulator based on a broadband adjustable gradient metasurface and a design method thereof. The reflected electromagnetic wave modulator (broadband TGMS) of the present invention is composed of superunits periodically extended in a two-dimensional plane; the superunits are composed of six TGMS units with different structural parameters and phases arranged in order of size and have a broadband phase gradient ; And the TGMS unit is mainly composed of three parts: the upper main resonator and the sub-resonator, the middle dielectric plate and the lower metal ground plate; the present invention realizes the phase dispersion by introducing a varactor diode and a double resonant structure in the gradient metasurface unit Compensation and continuous adjustment of phase; switching from surface wave conversion to beam deflection function, and beam deflection has very high conversion efficiency in a wide frequency band.

Description

基于可调梯度超表面的反射电磁波调制器及其设计方法Reflective electromagnetic wave modulator based on tunable gradient metasurface and its design method

技术领域 technical field

本发明属于反射体系技术领域,具体涉及一种基于可调梯度超表面的反射电磁波调制器及其设计方法。 The invention belongs to the technical field of reflection systems, and in particular relates to a reflective electromagnetic wave modulator based on an adjustable gradient metasurface and a design method thereof.

背景技术 Background technique

异向介质(Metamaterials,MTMs)是指自然界本身并不存在,人们采用亚波长人工微结构单元并依据电磁理论设计出来的具有某种电响应或磁响应的“特异”人工复合结构或材料。虽然人们通过三维异向介质可以任意操控电磁波,但高损耗和制作的复杂性极大限制了它的应用。因此目前真正意义上的应用并不多。作为异向介质的一种二维平面形式,超表面应运而生,由于其独特的电磁特性和平面结构且能与飞机、导弹、火箭以及卫星等高速运行目标共形而不破坏其外形结构及空气动力学等特性,近年来受到研究人员的青睐和广泛关注。超表面按折射率/相位是否渐变可分为梯度超表面(GradientMetasurfaces,GMS)和均匀超表面(HomogenousMetasurfaces,HMS)。2011年,基于GMS发现的广义Snell折射/反射定律开辟了人们控制电磁波和光的全新途径和领域,正在推动该领域产生一场技术革新,GMS也因此成为异向介质新的分枝和研究热点。相对于技术较为成熟的HMS,GMS是基于相位突变和极化控制思想设计的一种二维梯度结构,可对电磁波的激发和传输进行灵活控制,实现奇异折射/反射、极化旋转以及非对称传输等奇异功能,具有更加强大的电磁波调控能力,目前相关应用研究还处于起步阶段。尽管如此,GMS在隐身表面、共形天线、数字编码、平板印刷等方面显示了巨大的潜在应用价值,成为各国抢夺的一个学科制高点和学科前沿。 Metamaterials (MTMs) refer to "specific" artificial composite structures or materials that do not exist in nature, but are designed with sub-wavelength artificial microstructure units and based on electromagnetic theory, with certain electrical or magnetic responses. Although people can arbitrarily manipulate electromagnetic waves through three-dimensional heterotropic media, high loss and fabrication complexity greatly limit its application. Therefore, there are not many real applications at present. As a two-dimensional planar form of anisotropic medium, a metasurface emerges at the historic moment. Due to its unique electromagnetic properties and planar structure, it can conform to high-speed targets such as aircraft, missiles, rockets and satellites without destroying its shape and structure. Aerodynamics and other characteristics have been favored and widely concerned by researchers in recent years. Metasurfaces can be divided into Gradient Metasurfaces (GMS) and Homogenous Metasurfaces (HMS) according to whether the refractive index/phase is gradient. In 2011, the generalized Snell refraction/reflection law discovered based on GMS opened up a new way and field for people to control electromagnetic waves and light, and is promoting a technological innovation in this field. GMS has therefore become a new branch and research hotspot of heterotropic media. Compared with the more mature HMS, GMS is a two-dimensional gradient structure designed based on the idea of phase mutation and polarization control, which can flexibly control the excitation and transmission of electromagnetic waves, and realize singular refraction/reflection, polarization rotation and asymmetry Transmission and other singular functions have more powerful electromagnetic wave control capabilities. At present, related application research is still in its infancy. Nevertheless, GMS has shown great potential application value in stealth surfaces, conformal antennas, digital coding, lithographic printing, etc., and has become a subject commanding height and subject frontier that countries are vying for.

以往超表面一旦工作频率改变,要想得到同样的电磁特性必须重新设计结构参数,效率低、可复用性差。随着超表面研究的深入和电磁操控技术的发展,人们通过外加调控器件即可实现对单元谐振频率和表面阻抗的实时调控,获得超表面的奇异动态电磁特性,为新功能器件和电磁波调制器件的实现和验证提供了新的方法和手段。但以往可调超表面的研究仅局限于HMS,至今还未见关于可调梯度超表面(TunableGMS,TGMS)的公开报道。同时对于可调HMS来说,由于变容二极管的引入,Q值非常高,HMS的相位动态可调范围很小,带宽非常窄。 In the past, once the operating frequency of metasurfaces changed, structural parameters had to be redesigned to obtain the same electromagnetic properties, which resulted in low efficiency and poor reusability. With the deepening of metasurface research and the development of electromagnetic manipulation technology, people can realize real-time regulation of unit resonant frequency and surface impedance by adding control devices, and obtain the singular dynamic electromagnetic properties of metasurfaces, which are new functional devices and electromagnetic wave modulation devices. The realization and verification of the system provide new methods and means. However, previous research on tunable metasurfaces was limited to HMS, and there has been no public report on tunable gradient metasurfaces (TunableGMS, TGMS). At the same time, for the adjustable HMS, due to the introduction of the varactor diode, the Q value is very high, the dynamic adjustable range of the phase of the HMS is very small, and the bandwidth is very narrow.

发明内容 Contents of the invention

本发明为了克服现有技术存在的不足,提供一种基于可调梯度超表面的反射电磁波调制器及其设计方法。 In order to overcome the shortcomings of the prior art, the present invention provides a reflective electromagnetic wave modulator based on an adjustable gradient metasurface and a design method thereof.

本发明首先提供一种可调梯度超表面(TGMS)单元,该TGMS单元主要由上层主谐振器和副谐振器、中间介质板和下层金属接地板三部分组成;其中,所述主谐振器为I型金属结构,由水平金属条、垂直金属条以及焊接于垂直金属条开口之间的变容二极管组成,所述副谐振器由一对大小相同的金属贴片组成,用于在高频处产生对称的电响应。I型结构中,水平金属条(线宽很窄的)用于提供一个高电抗值,发挥直流偏置的功能,防止高频微波信号进入直流源而对直流偏压没有影响,从而可提高电路的稳定性。 The present invention firstly provides a Tunable Gradient Metasurface (TGMS) unit, the TGMS unit is mainly composed of three parts: the upper main resonator and the sub-resonator, the middle dielectric plate and the lower metal grounding plate; wherein, the main resonator is I-type metal structure, composed of horizontal metal strips, vertical metal strips, and varactor diodes welded between the openings of the vertical metal strips, the sub-resonator consists of a pair of metal patches of the same size, used for high frequency produce a symmetrical electrical response. In the I-type structure, the horizontal metal strip (with a very narrow line width) is used to provide a high reactance value and play the function of DC bias, preventing high-frequency microwave signals from entering the DC source without affecting the DC bias voltage, thereby improving the circuit. stability.

本发明还提供的基于上述TGMS单元的的反射电磁波调制器,该反射电磁波调制器是一种宽带可调梯度超表面(即宽带TGMS),宽带可调梯度超表面由超单元在二维平面内周期延拓构成;超单元则由6个具有不同结构参数、相位的上述TGMS单元按尺寸大小顺序排列组成,具有均匀的宽带相位梯度。 The present invention also provides a reflected electromagnetic wave modulator based on the above TGMS unit, the reflected electromagnetic wave modulator is a broadband tunable gradient metasurface (i.e. broadband TGMS), and the broadband tunable gradient metasurface consists of a superunit in a two-dimensional plane Period extension; the superunit is composed of six TGMS units with different structural parameters and phases arranged in order of size, and has a uniform broadband phase gradient.

本发明还提出上述宽带可调梯度超表面即反射电磁波调制器的参数设计方法,具体步骤如下: The present invention also proposes a parameter design method of the above-mentioned broadband adjustable gradient metasurface, that is, a reflective electromagnetic wave modulator, and the specific steps are as follows:

第一步:确定TGMS单元的周期p i(即TGMS单元尺寸,分为p xp yp x为x方向的尺寸,p y为y方向的尺寸)、相邻TGMS单元相位差φ0(例如,设φ0=60o,则TGMS单元个数为6,可依次记为1#~6#TGMS单元)、初始工作频率f 0(一般f 0<f c)、初始电容C 0(一般选择变容二极管容值的下限),并通过改变结构参数(例如改变h 2h 3w 3以及C t等),得到一组1#~6#TGMS单元相位呈线性梯度变化的结构参数;这里,f c为临界频率,h 2为I形结构的垂直金属线长度,h 3w 3为贴片的高度和宽带,C t为变容二极管的总电容; Step 1: Determine the period p i of the TGMS unit (that is, the size of the TGMS unit, which is divided into p x and p y , where p x is the size in the x direction, and p y is the size in the y direction), and the phase difference between adjacent TGMS units φ 0 (For example, if φ 0 =60 o , then the number of TGMS units is 6, which can be recorded as 1#~6#TGMS units in turn), initial operating frequency f 0 (generally f 0 < f c ), initial capacitance C 0 ( Generally select the lower limit of the varactor capacitance), and by changing the structural parameters (such as changing h 2 , h 3 , w 3 and C t , etc.), a group of 1#~6#TGMS unit phases with a linear gradient change structure can be obtained parameters; here, f c is the critical frequency, h 2 is the length of the vertical metal line of the I-shaped structure, h 3 and w 3 are the height and bandwidth of the patch, and C t is the total capacitance of the varactor diode;

第二步:对上述得到的1#~6#TGMS单元的反射相位进行仿真,扫描不同电容值C对应的相位分布,得到各TGMS单元在不同频率下的电容-相位(C–φ)分布; Step 2: Simulate the reflection phase of the 1#~6#TGMS units obtained above, scan the phase distribution corresponding to different capacitance values C, and obtain the capacitance-phase (C–φ) distribution of each TGMS unit at different frequencies;

第三步:根据C–φ在不同频率处各TGMS单元所需电容C i,设置扫描频率步长(例如为0.005GHz)并以某个TGMS单元(例如,选择1#TGMS单元)在特定频率和C 0情形下的反射相位为基准点,通过三次样条插值计算不同频率处严格满足均匀相位梯度时其它各TGMS单元(例如2#-6#TGMS单元)所需相位,而后通过上述得到的C–φ分布并通过三次样条插值得到其它各TGMS单元所需电容C i。若该频率处每个TGMS单元得到的C i均在变容二极管可达到的电容范围内(例如,0.3pF<C i<1.2pF),则运算下一频率,否则改变初始电容C 0;重复循环上述步骤,直至得到满足电容范围的一组参数C。若得到的电容组合不止一组,这里选择电容跨越范围最小的一组;若C 0遍历电容范围内所有值均不能得到满足要求的一组参数,则结束扫描,频率达到可调范围的边界; Step 3: According to the capacitance C i required by each TGMS unit at different frequencies of C–φ, set the scanning frequency step size (for example, 0.005GHz) and use a certain TGMS unit (for example, select 1#TGMS unit) at a specific frequency and the reflection phase in the case of C 0 as the reference point, calculate the required phases of other TGMS units (such as 2#-6#TGMS units) when the uniform phase gradient is strictly satisfied at different frequencies through cubic spline interpolation, and then use the above obtained C-φ distribution and obtain the required capacitance C i of other TGMS units through cubic spline interpolation. If the C i obtained by each TGMS unit at this frequency is within the capacitance range achievable by the varactor diode (for example, 0.3pF< C i <1.2pF), then calculate the next frequency, otherwise change the initial capacitance C 0 ; repeat Repeat the above steps until a set of parameters C satisfying the capacitance range is obtained. If there are more than one group of capacitance combinations obtained, select the group with the smallest capacitance crossing range; if C 0 traverses all values in the capacitance range and cannot obtain a set of parameters that meet the requirements, then end the scan, and the frequency reaches the boundary of the adjustable range;

第四步,根据获得的电容值,通过变容二极管的电容-电压(C-V)分布反推获得电压值,这里需要对C-V曲线进行插值计算得到每个频点处所需的电压值; In the fourth step, according to the obtained capacitance value, the voltage value is obtained by inverting the capacitance-voltage (C-V) distribution of the varactor diode. Here, it is necessary to interpolate the C-V curve to obtain the required voltage value at each frequency point;

第五步,对上述6个TGMS单元按尺寸大小顺序排列形成超单元;对超单元在二维平面内进行周期延拓,并通过偏置线(水平金属条)施加第四步得到的所需电压,则得到所需的宽带TGMS,即反射电磁波调制器。 The fifth step is to arrange the above six TGMS units in order of size to form a super unit; carry out periodic extension on the super unit in the two-dimensional plane, and apply the required voltage, the desired broadband TGMS, that is, the reflected electromagnetic wave modulator, is obtained.

以上步骤均通过matlab编程实现。 The above steps are all realized by matlab programming.

本发明将可调技术与GMS相结合,通过在GMS单元中引入变容二极管和双谐振结构,得到了具有相位补偿和相位连续可调的TGMS单元;本发明提出的TGMS单元,还在主谐振结构附近巧妙引入一对等大金属贴片,其目的是为了引入新的谐振,通过调整贴片尺寸并使其与主谐振相互配合即可实现两个谐振频率的顺利过渡和级联,从而有效降低了Q值,拓展了TGMS的相位和频率调控范围,具有很高的设计自由度;同时TGMS提供了宽频动态线性梯度和连续电磁波调控特性,拓展了GMS的应用领域,提高了GMS的工作效率,降低了制作成本在电磁波动态调制、新功能天线、宽频隐身和大容量通信领域具有广阔应用前景。 The present invention combines adjustable technology with GMS, and obtains a TGMS unit with phase compensation and continuous phase adjustment by introducing a varactor diode and a double-resonant structure into the GMS unit; the TGMS unit proposed by the present invention is still in the main resonance A pair of equal large metal patches are ingeniously introduced near the structure. The purpose is to introduce a new resonance. By adjusting the size of the patch and making it cooperate with the main resonance, the smooth transition and cascade of the two resonance frequencies can be realized, thus effectively It reduces the Q value, expands the phase and frequency control range of TGMS, and has a high degree of design freedom; at the same time, TGMS provides broadband dynamic linear gradient and continuous electromagnetic wave control characteristics, which expands the application field of GMS and improves the working efficiency of GMS , reduces the production cost , and has broad application prospects in the fields of electromagnetic wave dynamic modulation, new functional antenna, broadband stealth and large-capacity communication.

最后本发明TGMS的反射调控功能可直接拓展到TGMS透射调控中。 Finally, the reflection control function of the TGMS of the present invention can be directly extended to the TGMS transmission control.

附图说明 Description of drawings

图1是本发明宽带TGMS设计方法的流程图。 Fig. 1 is a flow chart of the broadband TGMS design method of the present invention.

图2是本发明基于变容二级管的TGMS单元拓扑结构;其中,w 1h 2为I形结构的垂直金属线宽带和长度,h 3w 3为贴片的高度和宽度,C t为变容二极管的总电容,p xp y为单元在x和y方向的周期,w 2为水平偏置线的宽度,d 1d 2为I型结构与贴片之间在y和x方向的间距,h 1为焊接变容二极管而留存的间距,h为介质板的厚度。 Fig. 2 is the topological structure of the TGMS unit based on the varactor diode of the present invention; wherein, w 1 and h 2 are the broadband and length of the vertical metal wires of the I-shaped structure, h 3 and w 3 are the height and width of the patch, C t is the total capacitance of the varactor diode, p x , p y are the period of the unit in the x and y directions, w 2 is the width of the horizontal bias line, d 1 , d 2 are the distance between the I-type structure and the patch in y and the spacing in the x direction, h 1 is the spacing reserved for welding varactor diodes, and h is the thickness of the dielectric plate.

图3是本发明TGMS单元的等效电路; Fig. 3 is the equivalent circuit of the TGMS unit of the present invention;

图3中提取的电路参数为:L 1=18.76nH,C 1=0.111pF,L 2=0.059nH,C 2=0.196pF,R 1=8.37Ω,R 2=0.114Ω,Z c=204.9Ω和h o=58.9oThe circuit parameters extracted in Figure 3 are: L 1 =18.76nH, C 1 =0.111pF, L 2 =0.059nH, C 2 =0.196pF, R 1 =8.37Ω, R 2 =0.114Ω, Z c =204.9Ω and h o =58.9 o .

图4是本发明TGMS单元中变容二极管的等效电路模型,其中左边为spice电路模型,右边为检测电路模型。 Fig. 4 is the equivalent circuit model of the varactor diode in the TGMS unit of the present invention, wherein the left side is the spice circuit model, and the right side is the detection circuit model.

图5是变容二极管SMV1430-079LF的C-V曲线。 Figure 5 is the C-V curve of the varactor diode SMV1430-079LF.

图6是不同情形下本发明TGMS单元的反射幅度曲线。 Fig. 6 is the reflection amplitude curve of the TGMS unit of the present invention under different conditions.

图7是不同情形下本发明TGMS单元的反射相位曲线; Fig. 7 is the reflection phase curve of the TGMS unit of the present invention under different situations;

图6和图7中:单元结构参数为p x=p y=12mm,w 1=0.8mm,w 2=0.5mm,w 3=5.1mm,d 1=0.25mm,d 2=0.5mm,h 1=1.5mm,h 2=4.5mm和h 3=10mm。 In Figure 6 and Figure 7: the unit structure parameters are p x = p y =12mm, w 1 =0.8mm, w 2 =0.5mm, w 3 =5.1mm, d 1 =0.25mm, d 2 =0.5mm, h 1 =1.5 mm, h 2 =4.5 mm and h 3 =10 mm.

图8是贴片宽度对本发明TGMS单元反射特性的影响曲线; Fig. 8 is the impact curve of the patch width on the reflection characteristics of the TGMS unit of the present invention;

图8中:单元结构参数为p x=p y=12mm,C j=0.31pF,w 1=0.8mm,w 2=0.5mm,w 3=5.1mm,d 1=0.25mm,d 2=1mm,h 1=1.5mm,h 2=4.5mm和h 3=10mm。 In Figure 8: the unit structure parameters are p x = p y =12mm, C j =0.31pF, w 1 =0.8mm, w 2 =0.5mm, w 3 =5.1mm, d 1 =0.25mm, d 2 =1mm , h 1 =1.5mm, h 2 =4.5mm and h 3 =10mm.

图9是本发明TGMS的拓扑结构。 Fig. 9 is the topology structure of the TGMS of the present invention.

图10是本发明1#~6#单元在4.1GHz处的宽带反射幅度曲线。 Fig. 10 is the broadband reflection amplitude curve of units 1#~6# of the present invention at 4.1GHz.

图11是本发明1#~6#单元在4.1GHz处的宽带反射相位曲线。 Fig. 11 is the broadband reflection phase curve of units 1#~6# of the present invention at 4.1GHz.

图12是对比方案下不同频率处TGMS中1#~6#单元的电容值。 Figure 12 shows the capacitance values of units 1#~6# in TGMS at different frequencies under the comparison scheme.

图13是不同频率处TGMS中1#~6#单元的电容值; Figure 13 is the capacitance value of 1#~6# units in TGMS at different frequencies;

图12和图13中:单元结构参数为p x=p y=12mm,w 1=0.8mm,w 2=0.5mm,w 3=5.1mm,d 1=0.25mm,d 2=0.5mm,h 1=1.5mm和h 3=2h 2+h 1-2d 1In Figure 12 and Figure 13: the unit structure parameters are p x = p y =12mm, w 1 =0.8mm, w 2 =0.5mm, w 3 =5.1mm, d 1 =0.25mm, d 2 =0.5mm, h 1 =1.5 mm and h 3 =2 h 2 + h 1 −2 d 1 .

图14是不同频率处TGMS中1#~6#单元的电压值。 Figure 14 is the voltage value of 1#~6# units in TGMS at different frequencies.

图15是6组电容、电压情形下1#~6#单元的反射幅度曲线。 Figure 15 is the reflection amplitude curve of units 1#~6# under the condition of 6 sets of capacitance and voltage.

图16是6组电容、电压情形下1#~6#单元的反射相位曲线。 Figure 16 is the reflection phase curve of units 1#~6# under the condition of 6 sets of capacitance and voltage.

图17是不同电压组合下TGMS的宽带散射场幅度。 Fig. 17 is the broadband scattering field amplitude of TGMS under different voltage combinations.

图18是不同电压组合下TGMS的单频散射场幅度。 Figure 18 shows the single-frequency scattered field amplitude of TGMS under different voltage combinations.

图19是表面波-传输波转换装置与第一组(1#)电压下表面波导波结构上的仿真场。 Fig. 19 is the surface wave-transmission wave conversion device and the simulation field on the surface waveguide wave structure under the first group (1#) voltage.

具体实施方式 detailed description

以下结合附图对本发明作详细描述。 The present invention will be described in detail below in conjunction with the accompanying drawings.

一种宽带可调梯度超表面设计方法,主要包括四步,方法流程如图1所示,其主要由如下步骤组成: A method for designing a broadband adjustable gradient metasurface mainly includes four steps, and the method flow is shown in Figure 1, which mainly consists of the following steps:

第一步:确定单元周期p i、相邻单元相位差φ0(本发明设φ0=60o,单元个数为6)、初始工作频率f 0(一般f 0<f c)、初始电容C 0(一般选择变容二极管容值的下限),并通过改变结构参数(本发明中改变h 2)得到一组相位呈完美线性梯度的结构参数; Step 1: Determine unit period p i , phase difference φ 0 between adjacent units (this invention assumes φ 0 =60 o , the number of units is 6), initial operating frequency f 0 (generally f 0 < f c ), initial capacitance C 0 (generally select the lower limit of the varactor capacitance), and by changing the structural parameters ( h 2 in the present invention) to obtain a set of structural parameters with a perfect linear gradient in phase;

第二步:对上述得到的1#~6#单元的反射相位进行仿真,扫描不同电容值C对应的相位分布,得到各单元在不同频率下的电容-相位(C–φ)分布; Step 2: Simulate the reflection phase of the 1#~6# units obtained above, scan the phase distribution corresponding to different capacitance values C, and obtain the capacitance-phase (C–φ) distribution of each unit at different frequencies;

第三步:根据C–φ得到不同频率处各单元所需电容C i,设置扫描频率步长(本发明0.005GHz)并以某个单元(例如,选择1#单元)在特定频率和C 0情形下的反射相位为基准点,通过三次样条插值计算不同频率处严格满足均匀相位梯度时其它各单元(2#-6#单元)所需相位,而后通过上述得到的C–φ分布并通过三次样条插值得到其它各单元所需电容C i。若该频率处每个单元得到的C i均在变容二极管可达到的电容范围内(本发明0.3pF<C i<1.2pF),则运算下一频率,否则改变初始电容C 0,重复循环上述步骤直至得到满足电容范围的一组参数C。若得到的电容组合不止一组,这里选择电容跨越范围最小的一组,若C 0遍历电容范围内所有值均不能得到满足要求的一组参数,则结束扫描,频率达到可调范围的边界。 Step 3: Get the required capacitance C i of each unit at different frequencies according to C-φ, set the scanning frequency step size (0.005GHz in the present invention) and use a certain unit (for example, choose 1# unit) at a specific frequency and C 0 In this case, the reflection phase is the reference point. Calculate the required phases of other units (2#-6# units) when the uniform phase gradient is strictly satisfied at different frequencies through cubic spline interpolation, and then pass the C-φ distribution obtained above and pass Cubic spline interpolation obtains the required capacitance C i of other units. If the C i obtained by each unit at this frequency is within the capacitance range that can be achieved by the varactor diode (0.3pF< C i <1.2pF in the present invention), then calculate the next frequency, otherwise change the initial capacitance C 0 and repeat the cycle The above steps are performed until a set of parameters C satisfying the capacitance range is obtained. If there are more than one combination of capacitors, select the group with the smallest capacitor crossing range here, and if C 0 traverses all the values in the capacitor range and cannot obtain a set of parameters that meet the requirements, then end the scan and the frequency reaches the boundary of the adjustable range.

第四步,根据获得的电容值并通过电容管的电容-电压(C-V)分布反推获得电压值,这里需要对C-V曲线进行插值计算得到每个频点处所需的电压值。 In the fourth step, the voltage value is obtained by inverting the capacitance-voltage (C-V) distribution of the capacitor tube according to the obtained capacitance value. Here, the C-V curve needs to be interpolated to obtain the required voltage value at each frequency point.

第五步,对上述6个TGMS单元按尺寸大小顺序排列形成超单元;对超单元在二维平面内进行周期延拓,并通过偏置线施加第四步得到的所需电压,则得到所需的宽带TGMS,即反射电磁波调制器。 The fifth step is to arrange the above six TGMS units in order of size to form a super unit; carry out periodic extension on the super unit in the two-dimensional plane, and apply the required voltage obtained in the fourth step through the bias line, then the obtained The required broadband TGMS, that is, reflected electromagnetic wave modulator.

以上步骤均通过matlab编程实现。 The above steps are all realized by matlab programming.

如图2所示,基于宽带TGMS设计方法设计的TGMS单元主要由上层主谐振器和副谐振器、中间介质板和下层金属接地板三部分组成,其中主谐振器为I型金属结构,由水平金属条、垂直金属条以及焊接于垂直金属条开口之间的变容二极管组成,副谐振器由一对大小相同的金属贴片组成,用于在高频处产生对称的电响应。这里I型结构中线宽很窄的水平金属条用于提供一个高电抗值,发挥直流偏置的功能,防止高频微波信号进入直流源而对直流偏压没有影响,从而可提高电路的稳定性。 As shown in Figure 2, the TGMS unit designed based on the broadband TGMS design method is mainly composed of three parts: the upper main resonator and the sub-resonator, the middle dielectric plate and the lower metal grounding plate. The main resonator is an I-shaped metal structure, composed of horizontal Composed of metal strips, vertical metal strips, and varactor diodes welded between the openings of the vertical metal strips, the sub-resonator consists of a pair of metal patches of equal size to produce a symmetrical electrical response at high frequencies. Here, the horizontal metal strip with very narrow line width in the I-type structure is used to provide a high reactance value and play the function of DC bias, preventing high-frequency microwave signals from entering the DC source without affecting the DC bias voltage, thereby improving the stability of the circuit. .

工作时,平面电磁波沿-z方向垂直入射到TGMS单元上,电场、磁场分别沿y轴、x轴方向激励。电场将驱动主谐振器和副谐振器产生特定频率下的电响应,而磁场将驱动结构产生传导电流以及流经上层金属结构和金属背板之间的位移电流。如图3所示,主谐振器的电响应由串联支路L 1C 1R 1来等效,副谐振器的电响应由串联支路L 2C 2R 2来等效,而电磁波在介质板中传输由阻抗为Z c,长度为h的传输线等效,金属地板由接地等效。这里电感L 1由I型结构的垂直金属线电感和变容二极管的引线电感组成,电容C 1即包含相邻单元水平金属线条形成的缝隙电容又包括变容二极管的结电容,电场驱动微带贴片产生的响应由电感L 2和电容C 2来等效,而R 1R 2用来表征损耗。根据传输线理论,TGMS单元将会产生两个电谐振,主、副谐振频率分别为。由于金属背板的作用,本发明属于反射体系,电磁波入射到TGMS单元没有透射只有反射。由于串联支路谐振,TGMS单元在处会产生两个反射谷且反射相位在谐振频率附近会发生突变。通过改变I型结构、贴片的物理尺寸以及调谐变容二极管的结电容可以操控f 1f 2的大小,利用这个性质可以在工作频率f 0处设计具有线性相位梯度的TGMS单元。 When working, the plane electromagnetic wave is vertically incident on the TGMS unit along the -z direction, and the electric field and magnetic field are respectively excited along the y-axis and x-axis directions. The electric field will drive the main resonator and sub-resonator to generate an electrical response at a specific frequency, while the magnetic field will drive the structure to generate a conduction current and a displacement current that flows between the upper metal structure and the metal backplane. As shown in Figure 3, the electrical response of the main resonator is equivalent by the series branches L 1 , C 1 and R 1 , and the electrical response of the sub-resonator is equivalent by the series branches L 2 , C 2 and R 2 , The transmission of electromagnetic waves in the dielectric plate is equivalent to a transmission line with an impedance of Z c and a length of h , and the metal floor is equivalent to grounding. Here, the inductance L 1 is composed of the vertical metal wire inductance of the I-type structure and the lead inductance of the varactor diode. The capacitance C 1 includes the gap capacitance formed by the horizontal metal lines of adjacent units and the junction capacitance of the varactor diode. The electric field drives the microstrip The response produced by the patch is equivalent to the inductance L2 and the capacitance C2 , while R1 and R2 are used to characterize the loss . According to the transmission line theory, the TGMS unit will generate two electrical resonances, the primary and secondary resonance frequencies are and . Due to the effect of the metal back plate, the present invention belongs to the reflection system, and the electromagnetic wave incident on the TGMS unit has no transmission but reflection. Due to series branch resonance, the TGMS unit is at and There will be two reflection valleys at , and the reflection phase will change abruptly near the resonance frequency. The size of f1 and f2 can be manipulated by changing the I-type structure, the physical size of the patch, and tuning the junction capacitance of the varactor diode. Using this property, a TGMS unit with a linear phase gradient can be designed at the operating frequency f0 .

本实施例中介质板采用聚四氟乙烯玻璃布板,介电常数ε r =2.65,厚度h=6mm,电正切损耗tanσ=0.001。变容二极管采用SMV1430-079LF,其spice和检测等效电路模型如图4所示,其中R sL sC s分别代表变容二极管的寄生电阻,封装引线电感和管壳电容,C j代表管芯的结电容,由于C s的影响较小一般可以忽略。此时二极管的等效电路模型可用串联的R sL sC j来等效,其中L s=0.7nH,R s≈1Ω,而C j典型值随电压的变化曲线如图5所示,当二极管两端加上很小的反向偏置电压时,二极管呈现很大的容值,在0V时呈现最大电容C j=1.24pF,当反向电压逐渐增大时,C j不断变小,直到门限电压30v时电容达到最小为C j=0.31pF。 In this embodiment, the dielectric plate is made of polytetrafluoroethylene glass cloth plate, the dielectric constant ε r = 2.65, the thickness h = 6mm, and the electrical tangent loss tanσ = 0.001. The varactor diode adopts SMV1430-079LF, and its spice and detection equivalent circuit model are shown in Figure 4, where R s , L s , and C s represent the parasitic resistance of the varactor diode, package lead inductance and shell capacitance, C j Represents the junction capacitance of the die, which can generally be ignored due to the small influence of C s . At this time, the equivalent circuit model of the diode can be equivalent by connecting R s , L s and C j in series, where L s =0.7nH, R s ≈1Ω, and the variation curve of the typical value of C j with voltage is shown in Figure 5 , when a small reverse bias voltage is applied to both ends of the diode, the diode exhibits a large capacitance, and the maximum capacitance C j =1.24pF is present at 0V. When the reverse voltage gradually increases, C j keeps changing Small, until the threshold voltage is 30v, the capacitance reaches a minimum of C j =0.31pF.

为说明本发明TGMS单元的独特电磁特性和优势,采用CSTMicrowaveStudio对六种不同情形下的单元电磁特性进行仿真,其中沿x、y和z方向的边界分别设置为磁边界、电边界和波端口。如图6和图7所示,没有贴片时,点划线曲线上显示只有一个谐振点且谐振处单元的幅度和相位变化非常剧烈且远离谐振时相位呈现一个渐近行为,相位调控的频率范围非常窄,Q值很高。当引入金属贴片后,在点线和箭头线幅度频谱上明显存在两个谐振点f 1f 2且由于主、副谐振器之间的相互作用,f 1稍向低频移动。同时f 1f 2处的幅度谐振强度和相位变化急剧程度明显减弱,Q值有效降低,反射幅度大且幅度一致性好,相位的频率调控范围明显展宽。同时还可以看出,当介质板厚度由1.5mm增加到6mm时TGMS单元的幅度谐振强度和相位变化急剧程度同样明显减弱,Q值得到降低,但这种方式增加的相位调控范围非常有限。最后,三种情形下均能看出当C j由0.1pF增加到1.2pF时谐振频率均显著降低,改变C j的大小可以有效操控谐振频率和相位,同时谐振强度和相位变化剧烈程度均随C j的增大明显增强,Q值增加。 In order to illustrate the unique electromagnetic characteristics and advantages of the TGMS unit of the present invention, the electromagnetic characteristics of the unit in six different situations are simulated using CSTMicrowaveStudio, where the boundaries along the x, y and z directions are respectively set as magnetic boundaries, electrical boundaries and wave ports. As shown in Figure 6 and Figure 7, when there is no patch, there is only one resonance point on the dot-dash line curve, and the amplitude and phase of the unit at the resonance change very sharply, and the phase presents an asymptotic behavior when it is far away from the resonance, and the frequency of the phase regulation The range is very narrow and the Q value is high. When the metal patch is introduced, there are obviously two resonance points f 1 and f 2 on the amplitude spectrum of the dotted line and the arrow line, and due to the interaction between the main and secondary resonators, f 1 moves slightly to the low frequency. At the same time, the amplitude resonance intensity and phase change at f 1 and f 2 are obviously weakened, the Q value is effectively reduced, the reflection amplitude is large and the amplitude consistency is good, and the frequency control range of the phase is obviously widened. At the same time, it can also be seen that when the thickness of the dielectric plate increases from 1.5mm to 6mm, the amplitude resonance strength and phase change of the TGMS unit are also significantly weakened, and the Q value is reduced, but the phase adjustment range increased by this method is very limited. Finally, in the three cases, it can be seen that when C j increases from 0.1pF to 1.2pF, the resonance frequency decreases significantly. Changing the value of C j can effectively control the resonance frequency and phase, and at the same time, the intensity of resonance intensity and phase changes with the The increase of C j is obviously enhanced, and the Q value increases.

为进一步验证贴片的物理尺寸对TGMS单元反射特性以及f 2的影响和调控,图8给出了反射系数随贴片高度、宽度变化的曲线。可以看出当贴片高度和宽度增大时,f 2逐渐减小而f 1几乎保持不变,同时f 2附近的相位发生明显变化而f 1附近的相位同样几乎不变,再次证明副谐振由贴片引起且调谐贴片的尺寸可单独调控f 2。需要说明的是,增大的贴片尺寸会使f 2处的反射幅度稍微减小,一定程度上会恶化整个频谱上反射幅度的一致性。 In order to further verify the influence and regulation of the physical size of the patch on the reflection characteristics of the TGMS unit and f2 , Fig. 8 shows the curves of the reflection coefficient changing with the height and width of the patch. It can be seen that when the height and width of the patch increase, f 2 gradually decreases while f 1 remains almost unchanged, and at the same time the phase near f 2 changes significantly while the phase near f 1 also remains almost unchanged, again proving the sub-resonance The size of f2 caused by and tuning the patch can be tuned independently. It should be noted that the increased patch size will slightly reduce the reflection amplitude at f2 , which will worsen the consistency of the reflection amplitude on the entire frequency spectrum to a certain extent.

TGMS实现表面波转换和波束偏折功能的原理为:根据广义反射、折射率定律,当电磁波以入射角??i照射到TGMS时,反射角??r满足,这里为单位长度TGMS产生的相位梯度,可以计算为,??为电磁波在自由空间中的波长,为折射率。当电磁波由自由空间垂直入射到TGMS时反射角可简化为。通过合理设计可使工作频率f 0,也即,根据超单元的尺寸可计算临界频率f c。当时,TGMS能将传输电磁波被转变成表面波,散射电磁波很弱;而当且不断增大时,此时在不断减小,通过合理设计可使TGMS能实现连续波束偏折。 The principle of TGMS to realize the function of surface wave conversion and beam deflection is: according to the law of generalized reflection and refractive index , when the electromagnetic wave irradiates the TGMS at the incident angle ?? i , the reflection angle?? r satisfies ,here The phase gradient produced for unit length TGMS can be calculated as ,?? is the wavelength of the electromagnetic wave in free space, is the refractive index. When the electromagnetic wave is vertically incident on the TGMS from free space, the reflection angle can be simplified as . by rational design can make the working frequency f 0 , that is and , according to the size of the superelement The critical frequency f c can be calculated. when When , TGMS can convert the transmitted electromagnetic waves into surface waves, and the scattered electromagnetic waves are very weak; and when and continuously increasing, at this time and It is constantly decreasing, and through reasonable design, TGMS can realize continuous beam deflection.

表1超单元中各TGMS单元的尺寸(毫米)、反射幅度和相位Table 1 Size (mm), reflection amplitude and phase of each TGMS unit in the superunit

.

依据上述原理和本发明TGMS单元的独特电磁特性,通过合理设计可使上述表面波转换功能和连续波束偏折功能仅由一块TGMS来实现,具有高集成度和多功能等优良特性。本发明超单元由6个不同尺寸的TGMS单元组成,相邻单元之间的相位依次滞后60o,相位完全覆盖360o,具有近1的反射幅度和均匀线性相位梯度。这里超单元中6个TGMS单元1#~6#的初始相位梯度通过改变I形结构的垂直金属线长度h 2并固定贴片与I形结构之间的距离d 1以及其它结构参数来实现,根据h 3=2h 2+h 1-2d 1可知贴片的高度h 3h 2一样同样在等幅变化。通过在相互正交的两个方向上周期延拓超单元,则可形成二维TGMS。利用TGMS实现的高反射幅度和线性相位梯度可用来操控反射电磁波的波束偏折方向和能量。这里超单元的构建有两种方式,一是1#~6#TGMS单元形成的相位梯度沿磁场方向,称为TE波模式,另一是相位梯度沿电场方向,称为TM波模式。由于TE模式下的表面波电场较弱不便于实际测量,因此本实施例中TGMS均以TM波模式排列设计。最终TGMS如图9所示,每排结构均由30个完全相同的单元组成,可由一个DC电压源和直流偏置电路进行单独馈电,因此本发明TGMS需要6个不同的电压进行独立控制。 According to the above principles and the unique electromagnetic characteristics of the TGMS unit of the present invention, through reasonable design, the above surface wave conversion function and continuous beam deflection function can be realized by only one TGMS, which has excellent characteristics such as high integration and multi-function. The super unit of the present invention is composed of 6 TGMS units of different sizes, the phases between adjacent units lag by 60o sequentially, the phase completely covers 360o , and has a reflection amplitude of nearly 1 and a uniform linear phase gradient. Here, the initial phase gradients of the six TGMS units 1#~6# in the superunit are realized by changing the vertical metal wire length h 2 of the I-shaped structure and fixing the distance d 1 between the patch and the I-shaped structure and other structural parameters, According to h 3 =2 h 2 + h 1 -2 d 1 , it can be seen that the height h 3 of the patch changes in the same amplitude as h 2 . Two-dimensional TGMS can be formed by periodically extending superunits in two mutually orthogonal directions. The high reflection amplitude and linear phase gradient achieved with TGMS can be used to manipulate the beam deflection direction and energy of reflected electromagnetic waves. There are two ways to construct the superunit here. One is that the phase gradient formed by the 1#~6# TGMS unit is along the direction of the magnetic field, which is called the TE wave mode, and the other is that the phase gradient is along the direction of the electric field, which is called the TM wave mode. Since the electric field of the surface wave in the TE mode is weak and inconvenient for actual measurement, the TGMSs in this embodiment are designed in an arrangement of the TM wave mode. The final TGMS is shown in Figure 9. Each row is composed of 30 identical units, which can be fed separately by a DC voltage source and a DC bias circuit. Therefore, the TGMS of the present invention requires 6 different voltages for independent control.

根据本发明超单元的尺寸可计算临界频率为f c=4.167GHz,为便于调谐和更加直观,本发明中各TGMS单元的初始线性相位梯度设计在4.1GHz处且C j=1.2pF,接近于上限容值,此时二极管两端的反向偏置电压接近于下限0V。表1给出了各TGMS单元的尺寸以及在4.1GHz处的反射幅度和相位,图10和图11给出了它们的宽带反射特性,可以看出各TGMS单元在4.1GHz处的反射幅度均大于0.87,幅度一致性好且相位严格满足均匀线性梯度,而相位色散的非线性使得GMS在f 0偏离4.1GHz不再具有均匀线性相位梯度。同时还可以看出随着h 2h 3的不断减小,f 1f 2均向高频移动,但由于f 2的变化慢于f 1的变化,两个谐振频率相互靠近最终合并成一个较宽、较深的谐振谷。由于在4.1GHz处f 0<f c,TGMS能实现传输波到表面波的转化。而当频率升高且f 0>f c时,由于非均匀相位梯度部分能量将发生镜像反射,偏折反射效率降低且随TGMS相位色散和逐渐远离而加剧。本发明通过对6个单元二极管的电容进行独立调控实现了对6个相位的独立调控,解决了两大难题,一是实现了高效偏折反射,二是实现了频率连续可调和带宽最大化。 The size of the superelement according to the invention The critical frequency that can be calculated is fc = 4.167GHz . For the convenience of tuning and more intuition, the initial linear phase gradient of each TGMS unit in the present invention is designed at 4.1GHz and Cj = 1.2pF, which is close to the upper limit capacitance. At this time, the diode The reverse bias voltage at both ends is close to the lower limit of 0V. Table 1 shows the size of each TGMS unit and the reflection amplitude and phase at 4.1GHz. Figure 10 and Figure 11 show their broadband reflection characteristics. It can be seen that the reflection amplitude of each TGMS unit at 4.1GHz is greater than 0.87, the amplitude consistency is good and the phase strictly meets the uniform linear gradient, while the nonlinearity of the phase dispersion makes GMS no longer have a uniform linear phase gradient when f 0 deviates from 4.1GHz. At the same time, it can also be seen that as h 2 and h 3 continue to decrease, both f 1 and f 2 move to high frequency, but because the change of f 2 is slower than that of f 1 , the two resonant frequencies are close to each other and finally merged into A wider, deeper resonance valley. Since f 0 < f c at 4.1GHz, TGMS can realize the conversion from propagating wave to surface wave. However, when the frequency increases and f 0 > f c , due to the non-uniform phase gradient part of the energy will be mirror reflected, the deflection reflection efficiency will decrease and gradually move away from the TGMS phase dispersion and And exacerbated. The invention realizes the independent regulation of six phases by independently regulating the capacitance of six unit diodes, and solves two major problems, one is to realize high-efficiency deflection reflection, and the other is to realize continuously adjustable frequency and maximum bandwidth.

为说明本发明获得电容组合方案的优越性,这里还给出了另一种对比方案,即始终保持1#单元的C 0不变而仅改变其它5个单元的电容值。图12和图13给出了两种方案下最终得到的电容随频率的变化曲线,可以看出对比方案中严格满足线性相位梯度的频率范围只有4.1-5.82GHz,而本发明方案获得的频率调控范围为4.1-6.6GHz,与对比方案相比调控范围得到了有效展宽,这得益于电容全可控提供了更多的自由度,同时还可以看出两种方案下4.1-5.82GHz范围内电容曲线完全相同。最终各单元在不同频率处所需的电压值如图14所示,可以看出电压与电容曲线明显成反比关系。 In order to illustrate the superiority of the capacitance combination scheme obtained by the present invention, another comparison scheme is given here, that is, keep the C 0 of the 1# unit unchanged and only change the capacitance values of the other 5 units. Fig. 12 and Fig. 13 show the variation curves of capacitance with frequency finally obtained under the two schemes. It can be seen that the frequency range that strictly satisfies the linear phase gradient in the comparison scheme is only 4.1-5.82GHz, while the frequency regulation obtained by the scheme of the present invention is The range is 4.1-6.6GHz. Compared with the comparison scheme, the control range has been effectively expanded. This is due to the more degrees of freedom provided by the fully controllable capacitance. The capacitance curves are exactly the same. Finally, the voltage values required by each unit at different frequencies are shown in Figure 14. It can be seen that the voltage and capacitance curves are obviously inversely proportional.

为说明上述方法的有效性且不失一般性,这里我们在图13和图14中随机选取六个频点处(4.1、4.5、5、5.5、6、6.5GHz)的六组(1#~6#)电容、电压作为样本进行验证。采用CST对6种电容、电压情形下1#~6#单元分别进行电磁仿真。图15和图16给出了1#~6#单元的反射幅度和相位曲线。从幅度曲线中可以看出所有情形下6个单元的反射幅度均有一定的变化但均大于0.85,而且前3种情形下(5.5、6、6.5GHz)的幅度一致性明显优于后3种情形下的幅度一致性。从相位曲线可以看出,所有情形下1#~6#单元的相位曲线互相平行且单元之间的相位严格满足线性相位梯度,验证了超单元设计的有效性。 In order to illustrate the effectiveness of the above method without loss of generality, here we randomly select six groups (1#~ 6#) Capacitance and voltage are used as samples for verification. CST is used to carry out electromagnetic simulation on units 1#~6# under 6 kinds of capacitance and voltage conditions. Figure 15 and Figure 16 show the reflection amplitude and phase curves of units 1#~6#. From the amplitude curves, it can be seen that the reflection amplitudes of the six units in all cases have certain changes but are greater than 0.85, and the amplitude consistency of the first three cases (5.5, 6, 6.5 GHz) is obviously better than the latter three Amplitude consistency in the case. From the phase curves, it can be seen that the phase curves of units 1#~6# in all cases are parallel to each other and the phases between the units strictly satisfy the linear phase gradient, which verifies the validity of the superunit design.

为验证本发明TGMS的多功能特性,采用CST对包含5个超单元的TGMS进行散射场仿真。这里相位梯度和电场均沿y轴方向且该方向的两个边界均设置为开放边界,平面电磁波沿-z方向垂直入射,x方向上只有一个单元且该方向的两个边界设置为磁边界,用于模拟无限大超表面。由于这里只关心TGMS的反射特性,即只关心yoz面内上半区域(-90o<θ<90o)的空间散射场幅度,而开放边界透射的能量不予考虑。图17和图18分别给出了不同频率处TGMS的散射场幅度分布,可以看出当变容二极管上的电压为第一组电压情形时(4.1GHz),TGMS在低于4.1GHz时散射场很弱,为表面波效果;而在后五组电压情形下,能量在完美线性梯度的工作频率f 0附近主要集中在+1阶散射方向,镜像(0阶)和-1阶散射场很弱,因此后5组电压情形下TGMS在f 0处的相对效率均大于85%,不同频率处反射总能量的不一致由TGMS不同的吸收引起。当频率远离f 0时,0阶和-1阶散射场强均有不同程度增加,而当TGMS上不施加偏置电压时,TGMS的0阶散射变得很大,-1阶散射很小,转换效率急剧下降。由于本发明TGMS在4.1~6.6GHz范围内均具有完美均匀相位梯度,因此高效波束偏折具有很宽的工作带宽。同时TGMS的功能表面波转换切换到了波束偏折且偏折角度由4.1GHz的近90度被逐步调谐到6.5GHz的39.9度,实现了多功能切换和高效波束偏折的宽频工作。 In order to verify the multifunctional characteristics of the TGMS of the present invention, the scattered field simulation of the TGMS containing 5 superunits is carried out by using CST. Here, both the phase gradient and the electric field are along the y-axis direction and the two boundaries in this direction are set as open boundaries, the plane electromagnetic wave is vertically incident along the -z direction, there is only one unit in the x-direction and the two boundaries in this direction are set as magnetic boundaries, For simulating infinite metasurfaces. Since only the reflection characteristics of TGMS are concerned here, that is, only the amplitude of the spatial scattering field in the upper half of the yoz plane (-90 o <θ <90 o ) is concerned, and the energy transmitted by the open boundary is not considered. Figure 17 and Figure 18 respectively show the amplitude distribution of the scattered field of TGMS at different frequencies. It can be seen that when the voltage on the varactor diode is the first set of voltage conditions (4.1GHz), the scattered field of TGMS is lower than 4.1GHz It is very weak, which is the surface wave effect; while in the last five groups of voltage conditions, the energy is mainly concentrated in the +1 order scattering direction near the operating frequency f 0 of the perfect linear gradient, and the image (0 order) and -1 order scattering fields are very weak , so the relative efficiency of TGMS at f 0 is greater than 85% in the latter five voltage situations, and the inconsistency of the total reflected energy at different frequencies is caused by the different absorption of TGMS. When the frequency is far away from f 0 , the field intensity of the 0-order and -1-order scattering increases in different degrees, and when no bias voltage is applied to the TGMS, the 0-order scattering of TGMS becomes very large, and the -1-order scattering is very small. The conversion efficiency drops sharply. Since the TGMS of the present invention has a perfect uniform phase gradient in the range of 4.1-6.6 GHz, the high-efficiency beam deflection has a very wide working bandwidth. At the same time, the function of TGMS surface wave conversion is switched to beam deflection and the deflection angle is gradually tuned from nearly 90 degrees at 4.1GHz to 39.9 degrees at 6.5GHz, realizing multi-functional switching and broadband work with efficient beam deflection.

为进一步说明4.1GHz处TGMS的表面波特性,这里设计了一个将表面波转化为传播波的装置,定量描述了其性能并计算了表面波的波长。由于梯度超表面所耦合的表面波并非本征态,它是在入射电磁波驱动下的受激态,不能自由传输,必须设计一个本征表面波结构才能引导其自由传输。如图19所示,仿真装置由TGMS、表面波导波结构以及吸波材料组成。入射电磁波垂直照射系统左侧的梯度超表面首先被转变成受激表面波,该受激表面波会耦合系统右侧的高阻抗表面上的本征表面等离激元,从而将能量导引出去。为防止传输表面波在末端被反射从而影响表面波的传播,这里在导波结构的末端额外加载了一段渐变吸收的结构抑制其反射。同时为达到受激表面波到本征表面波的高效转化,这里导波结构设计的关键是其波矢必须与超单元的梯度相等,即,从而达到波矢匹配,这里为临界频率处的波矢。本征表面波结构采用贴片结构,其结构参数可通过在商业电磁仿真软件扫描色散曲线获得,使得其在4.1GHz处的波矢。从仿真结果可以看出本征表面波结构能将受激表面波高效转换为传输表面波,且传输波的波长λ≈70.6mm,从而可换算得,实现了波矢匹配。 To further illustrate the surface wave characteristics of TGMS at 4.1GHz, a device for converting surface waves into propagating waves is designed here, its performance is quantitatively described and the wavelength of surface waves is calculated. Since the surface wave coupled to the gradient metasurface is not an eigenstate, it is an excited state driven by the incident electromagnetic wave and cannot be transmitted freely. An eigensurface wave structure must be designed to guide its free transmission. As shown in Figure 19, the simulation device is composed of TGMS, surface waveguide wave structure and absorbing material. The gradient metasurface on the left side of the system irradiated vertically by the incident electromagnetic wave is first transformed into a stimulated surface wave, which will couple the intrinsic surface plasmons on the high impedance surface on the right side of the system, thereby guiding the energy out . In order to prevent the propagating surface wave from being reflected at the end and thus affect the propagation of the surface wave, an additional section of gradually absorbing structure is loaded at the end of the waveguide structure to suppress its reflection. At the same time, in order to achieve efficient conversion of the stimulated surface wave to the intrinsic surface wave, the key to the design of the guided wave structure is that its wave vector must be equal to the gradient of the superelement, that is, , so as to achieve wave vector matching, here is the wave vector at the critical frequency. The intrinsic surface wave structure adopts a patch structure, and its structural parameters can be obtained by scanning the dispersion curve in commercial electromagnetic simulation software, so that its wave vector at 4.1GHz . From the simulation results, it can be seen that the intrinsic surface wave structure can efficiently convert the stimulated surface wave into the transmitted surface wave, and the wavelength of the transmitted wave λ≈70.6mm, which can be converted into , which achieves wave-vector matching.

本发明TGMS单元实现相位梯度的方式有多种,如可以调谐I型结构的高度、变容二极管上的电压以及贴片的尺寸,具有很高的设计自由度,同时TGMS提供了宽频动态完美线性梯度和连续电磁波调控特性,拓展了GMS的应用领域,提高了GMS的工作效率,降低了制作成本在电磁波动态调制、新功能天线、宽频隐身和大容量通信领域具有广阔应用前景,同时本发明TGMS的反射调控功能可直接拓展到TGMS透射调控中。 There are many ways for the TGMS unit of the present invention to realize the phase gradient. For example, the height of the I-type structure, the voltage on the varactor diode and the size of the patch can be tuned, which has a high degree of freedom in design. At the same time, the TGMS provides a wide-band dynamic perfect linearity Gradient and continuous electromagnetic wave control characteristics expand the application field of GMS, improve the working efficiency of GMS, reduce the production cost , and have broad application prospects in the fields of electromagnetic wave dynamic modulation, new function antenna, broadband stealth and large-capacity communication. At the same time, the present invention The reflection control function of TGMS can be directly extended to TGMS transmission control.

最后应当说明的是,以上内容仅用以说明本发明的技术方案,而非对本发明保护范围的限制,本领域的普通技术人员对本发明的技术方案进行的简单修改或者等同替换,均不脱离本发明技术方案的实质和范围。 Finally, it should be noted that the above content is only used to illustrate the technical solution of the present invention, rather than to limit the scope of protection of the present invention. Simple modifications or equivalent replacements to the technical solution of the present invention by those skilled in the art will not depart from the present invention. The essence and scope of the technical solution of the invention.

Claims (6)

1. A TGMS unit is characterized in that the unit mainly comprises an upper layer main resonator, an auxiliary resonator, a middle dielectric plate and a lower layer metal grounding plate; the primary resonator is of an I-shaped metal structure and comprises a horizontal metal strip, a vertical metal strip and a variable capacitance diode welded between openings of the vertical metal strip, and the secondary resonator is composed of a pair of metal patches with the same size and used for generating symmetrical electric response at a high frequency.
2. A modulator of reflected electromagnetic waves based on the TGMS unit of claim 1, characterized by a broadband tunable gradient super surface consisting of a periodic continuation of the super unit in a two-dimensional plane; the superunit is composed of 6 TGMS units with different structural parameters and phases which are arranged in sequence according to size and size, and has uniform broadband phase gradient.
3. A method of designing a modulator for reflected electromagnetic waves according to claim 2, characterized by the specific steps of:
the first step is as follows: determining a period of a TGMS unitp iAdjacent TGMS units have a phase difference phi0=60oInitial operating frequencyf 0Initial capacitanceC 0Obtaining a group of structural parameters with 1# -6# TGMS unit phases changing in a linear gradient manner by changing the structural parameters;
the second step is that: simulating the obtained reflection phases of the 1# -6# TGMS units, scanning phase distribution corresponding to different capacitance values C, and obtaining capacitance-phase C-phi distribution of each TGMS unit under different frequencies;
the third step: capacitance required by each TGMS unit at different frequencies according to capacitance-phase C-phiC iSetting scanning frequency step size and using a certain TGMS unit at specific frequency sumC 0The reflection phase under the condition is a datum point, the phases required by other TGMS units when the phases strictly meet the uniform phase gradient at different frequencies are calculated through cubic spline interpolation, and then the capacitance-phase C-phi distribution obtained through the method is used for obtaining the capacitance required by other TGMS units through cubic spline interpolationC i(ii) a If obtained per TGMS unit at that frequencyC iAll within the range of the capacitance that can be reached by the varactor, the next frequency is calculated, otherwise the initial capacitance is changedC 0(ii) a Repeating the above steps until a set of parameters satisfying the capacitance range is obtainedC(ii) a If the obtained capacitance combination is more than one group, selecting the group with the smallest capacitance spanning range; if it isC 0Traversing all values in the capacitance range to obtain a set of parameters which meet the requirements, and endingScanning, wherein the frequency reaches the boundary of an adjustable range;
fourthly, according to the obtained capacitance value, obtaining a voltage value through capacitance-voltage C-V distribution reverse-deducing of the variable capacitance diode, and carrying out interpolation calculation on a capacitance-voltage C-V curve to obtain a voltage value required by each frequency point;
fifthly, arranging the 6 TGMS units according to the size sequence to form a superunit; and carrying out periodic continuation on the superunit in a two-dimensional plane, and applying the required voltage obtained in the fourth step through a bias line to obtain the required broadband TGMS, namely the reflected electromagnetic wave modulator.
4. The design method according to claim 2, wherein: the phase deviation caused by phase dispersion is compensated through phase regulation and control of the variable capacitance diode, and the uniform phase gradient of the broadband is realized.
5. The design method according to claim 2, wherein: the construction of the superunit has two modes, namely, a phase gradient formed by the 1# -6# TGMS units is along the direction of a magnetic field and is called as a TE wave mode; the other is that the phase gradient formed by the 1# -6# TGMS units is along the direction of the electric field, which is called TM wave mode.
6. The design method according to claim 2, wherein: the pair of superunits carries out periodic continuation in a two-dimensional plane, namely the superunits are periodically prolonged in two mutually orthogonal directions.
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