CN105549228A - Terahertz space phase modulator based on high electron mobility transistor - Google Patents
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Abstract
The invention discloses a terahertz space external phase modulator based on a high electron mobility transistor. The phase modulator combines the quick response type high electron mobility transistor with a novel artificial electromagnetic medium resonant structure, so as to be able to conduct quick phase modulation on terahertz waves transmitted in free space. The phase modulator is composed of a semiconductor material substrate, an HEMT epitaxial layer, a periodical artificial metal electromagnetic resonant structure and a muff-coupling circuit. The concentration of two-dimensional electron gas in the HEMT epitaxial layer is controlled through loaded voltage signals, so that the electromagnetic resonance mode of the artificial electromagnetic medium resonant structure is changed, and then phase modulation of terahertz waves is achieved. Over-90-degree phase modulation depth can be realized within a large bandwidth, and the maximum phase modulation depth can be about 140 degrees. Furthermore, the phase modulator is simple in structure, easy to machine, high in modulation speed, convenient to use and easy to package.
Description
Technical field
This invention belongs to function solenoid device arts, and emphasis is for the quick dynamic function device of terahertz wave band.
Background technology
And as one of core technology the most key in Terahertz communication system, nowadays THz wave dynamic function device-Terahertz external modulator becomes the emphasis in Terahertz scientific and technical research field.Because the size of terahertz wave band function element requirement is in micron even nanometer scale, this makes the communication device of microwave region to directly apply to terahertz wave band.From 2004, the article of many sections of THz wave external modulators has been published successively at top publications of international natural science such as Nature/Science, its content comprises and combining with artificial electromagnetic medium (Metamaterials) based on mixing silica-based, GaAs based, phase-change material base and Graphene etc., utilizes the energisation mode of additional temperature, illumination, electric field etc. to realize Terahertz wave modulation.
In recent years along with the development of semiconductor material and technology, High Electron Mobility Transistor (HighElectronMobilityTransistor, HEMT) remarkable performance has been shown, and Successful utilization is to the field such as detector, amplifier, the Terahertz quick response dynamics device that appears as of HEMT provides new thinking of development.High Electron Mobility Transistor (HighElectronMobilityTransistor, HEMT) is the novel field effect transistor that a kind of utilization is present in that the modulation two-dimensional electron gas (2-DEG) mixed in heterojunction carries out work.High electron mobility is observed in MD-GaAs material/AlGaAs superlattice that R.Dingle in 1978 grows at MBE (molecular beam epitaxy) first.Three villages of Fujitsu in 1980 have developed HEMT, and are successfully applied to Microwave Low-Noise amplification.Third generation semiconductor material with wide forbidden band GaN not only has loose with gap, but also has that thermal conductivity is large, electron saturation velocities is high, breakdown field is powerful and the feature such as Heat stability is good.Therefore, in preparation high-speed functions device, the HEMT based on GaN material has very large advantage.
Artificial electromagnetic medium (Metamaterials) refers to and macroscopical elementary cell resonance structure with geometry in particular is periodically or aperiodically arranged formed a kind of artificial electromagnetic periodic array structure, by designing resonant element artificially, control it to the response characteristic of additional electromagnetic field and electromagnetic property.Along with the development of Micrometer-Nanometer Processing Technology in modern age, artificial electromagnetic medium serves huge impetus in the development promoting passive function element, all develops multiple correlation function device in microwave and millimeter wave section, terahertz wave band and optical band.
Summary of the invention
Technical matters to be solved by this invention is, a kind of modulator realizing the regulation and control of space THz wave quick dynamic phasing by impressed voltage signal is provided, effectively can carries out fast phase modulation to the THz wave of designed Frequency point and phase modulation depth reaches more than 90 degree in comparatively large bandwidth.
The technical scheme that the present invention solves the employing of described problem is, the Metamaterials structure of design containing multiple mode of resonance, HEMT and Metamaterials is ingenious and effectively combine, utilize the high speed dynamic perfromance of HEMT and Metamaterials to electromagnetic precision controllability, controlled the mode of resonance conversion of artificial electromagnetic medium by the high electron mobility characteristic of two-dimensional electron gas in HEMT fast, make this HEMT THz wave phase-modulator on wider frequency band, reach the phase modulation depth of more than 90 degree.
Thus the present invention is a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, and this modulator comprises: Semiconductor substrate, is positioned at the epitaxial loayer in Semiconductor substrate, is positioned at modulating unit array, positive electrode, negative electrode on epitaxial loayer; Each modulating unit in described modulating unit array comprises: source class resonator, drain electrode resonator, gate connection line, semiconductor doping heterojunction structure; The resonator that wherein drains is identical with source electrode resonator structure, comprise: metal semicircular ring, "T"-shaped metal feeder, wherein "T"-shaped metal feeder is made up of horizontal minor matters and longitudinal minor matters, and longitudinal minor matters of described "T"-shaped metal feeder run through semicircular ring from metal semicircular ring top ecto-entad; Drain electrode resonator is relative with source electrode resonator semicircular ring opening and be symmetricly set in the both sides of gate connection line, the bottom of drain electrode resonator and source class resonator semicircular ring end is provided with semiconductor doping heterojunction structure, in order to connect drain electrode resonator and source electrode resonator, this semiconductor doping heterojunction structure is positioned at the bottom of gate connection line simultaneously; In described modulating unit array, often row array element shares same gate connection line, and the gate connection line of each row connects same negative electrode; The horizontal minor matters of "T"-shaped metal feeder of resonator of draining in described often row modulating unit are communicated with successively, and connect positive electrode; In described often row modulating unit, the horizontal minor matters of the "T"-shaped metal feeder of source electrode resonator are communicated with successively, and connect positive electrode.
Further, described drain electrode resonator is connected with semiconductor doping heterojunction structure by a metal electrode with the end of source electrode resonator.
Further, in described drain electrode resonator and source electrode resonator, the end of semicircular ring arranges a brachyplast joint extended to the center of circle.
Further, the part that described gate connection line is positioned on semiconductor doping heterojunction structure is narrower than other parts.
The material of wherein said semiconductor doping heterojunction structure is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or AlGaAs/InGaAs/InP, and oblique line represents the combination of bi-material.
Wherein said Semiconductor substrate selection is sapphire, High Resistivity Si or silit.
Wherein said metal electrode material is Ti, Al, Ni, Au.
The material of wherein said drain electrode resonator, source electrode resonator, metal feeder is Au, Ag, Cu, Al.
The invention has the beneficial effects as follows, (1), this HEMT Terahertz phase-modulator adopts two transistor design, namely two High Electron Mobility Transistor are contained in each modulating unit, which greatly enhances the control ability of HEMT to artificial electromagnetic resonance structure, enhancing the resonant intensity of resonance structure, laying a good foundation for obtaining large phase modulation depth.(2), the phase modulation mechanism of this HEMT phase converter is the mode of resonance conversion utilizing the high electron mobility characteristic of two-dimensional electron gas in HEMT to control artificial electromagnetic medium fast, thus realizes the quick phase modulation to space THz wave.By making itself and transistor organically combine to the ingehious design of resonance structure, make resonance structure under HEMT on off operating mode, there is multiple different mode of resonance and make to intercouple between different mode, significantly improve depth of modulation thus, increase modulation band-width.(3), this structure has very strong plasticity: keeping under the overall constant prerequisite of modulating unit structure, the size of modulation band-width and the position of modulation band effectively can be regulated by the parameter (such as metal ring radius) changing resonant element, according to different actual demands, the bandwidth that this phase converter reaches more than 90 degree depth of modulation can increase to more than 0.2THz.(4) the modulating unit array of Metamaterials design forming, is utilized to be a kind of two-dimension plane structure in the present invention, realize by microfabrication means, technical maturity, be easy to make, the highly difficult processing that the design proposal avoiding complicated spatial structure is brought.(5), the present invention's design be the THz wave phase converter of transmission-type, compared to reflective phase converter, this device operation is simpler, uses more convenient, especially more can effectively play a role in Terahertz point-to-point communication.(6) phase-modulator, designed by the present invention can reach the depth of modulation of 90 degree to about 140 degree in very large bandwidth, while having large modulation band-width and depth of modulation, under this device can work in normal temperature, normal pressure, non-vacuum condition and without the need to WAVEGUIDE LOADED, be easy to encapsulation, these make this phase-modulator have good actual application prospect.
Accompanying drawing illustrates:
Fig. 1 is the global design scheme schematic diagram of HEMT phase-modulator.
Fig. 2 is HEMT phase modulator modulation unit three-dimensional schematic diagram.
Fig. 3 is resonant element partial schematic diagram.
Fig. 4 is electric field and the Surface current distribution mode chart of resonant element under making alive state.
Fig. 5 is electric field and the Surface current distribution mode chart of resonant element under non-making alive state.
Fig. 6 is HEMT phase-modulator transmission curve analogous diagram under different voltage.
Fig. 7 is HEMT phase-modulator phase place change analogous diagram under different voltage.
The phase diagram of HEMT phase-modulator when transistors changes of the different model that Fig. 8 surveys for experiment.
In figure: 1. Semiconductor substrate, 2. epitaxial loayer, 3. positive voltage loads pole, and 4. negative voltage loads pole, 5. modulation array, 6. drain resonator, 6-1. drain electrode resonator end, 7. gate connection line, 8. source electrode resonator, 8-1. source class resonator end, 9. metal electrode, 10 doping heterostructures.
Embodiment
The present invention is ingenious and be effectively combined into a kind of audion by HEMT and Metamaterials, utilize the high speed dynamic perfromance of HEMT and Metamaterials to electromagnetic precision controllability, the mode of resonance conversion of artificial electromagnetic medium is controlled fast by the high electron mobility characteristic of two-dimensional electron gas in HEMT, make this HEMT THz wave phase-modulator on wider frequency band, reach the phase modulation depth of more than 90 degree, realize quick, the efficient phase-modulation to THz wave in space.Describing this by simulation calculation and experimental verification is that one has large phase modulation depth and wide modulation band-width, and structure simple, be easy to the quick phase modulation device of HEMT Terahertz processed.
The present invention includes Semiconductor substrate (1), epitaxial loayer (2), modulating unit array (5), positive voltage loads electrode (3) and negative voltage loads electrode (4).Epitaxial loayer (2) is arranged in Semiconductor substrate (1), and modulating unit array (5), positive voltage load electrode (3) and negative voltage loading electrode (4) is arranged on epitaxial loayer (2); Described modulating unit group is the array of the M*N that multiple modulating unit is formed, wherein M>3, N>3; Described modulating unit comprises High Electron Mobility Transistor and artificial metal electromagnetic resonance structure, and each transistor gate is connected to negative voltage and loads electrode (5), and source electrode and drain electrode are connected to positive voltage and load electrode (3).Described positive voltage loads electrode (3) and comprises the source electrode link be connected with the source electrode of each transistor, and the drain electrode link be connected with each transistor drain.And the positive electrode that source electrode link and drain electrode link also can receive two different voltages realizes the Control of Voltage between source, drain electrode with this.
Each modulating unit comprises two symmetrical and identical transistors, and each transistor is bonded by source electrode, grid, drain electrode and modulation doping dissimilar materials, and is positioned at resonance structure ring part aperture slots place.
Artificial metal electromagnetic resonance cellular construction is made up of source electrode resonator, drain electrode resonator and gate connection line, a metal ring is comprised in each resonant element, the left and right two place aperture slots be positioned in the middle of annulus is divided into first annulus and second annulus, each annular slot place respectively have upper and lower two lateral metal bars with connect inside annulus and overlap be engraved in transistor source electrode, drain on.Upper and lower two metal vertical bars be connected outside metal ring and extend to annulus inside.Long lateral metal bar is positioned at resonant element upper and lower sides and is connected with the metal strip of adjacent cells.Wherein, source voltage loaded line, metal vertical bar and first annulus form source electrode resonator, drain voltage loaded line, metal vertical bar and second annulus form drain electrode resonator, gate connection line is positioned at cellular construction centre and is connected by the grid of unit two transistors, and gate connection line connects the gate connection line of arranged on left and right sides unit respectively.
Of the present invention is composite metal-semiconductor structure that artificial electromagnetic media resonance structure combines with HEMT based on High Electron Mobility Transistor space THz wave phase-modulator, in technique scheme, described substrate base can select the semiconductor materials such as sapphire, High Resistivity Si, silit; HEMT epitaxial loayer will select the semiconductor material that can form heterojunction, such as AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs etc.General employing Ti, Al, Ni, Au etc. form metal electrode, adopt the metal materials such as Au, Ag, Cu, Al to form socket circuit.The above-mentioned metal material listed also can adopt the metal of other characteristic close to replace.
The phase modulation mechanism of this phase converter is the concentration by two-dimensional electron gas in impressed voltage control HEMT, and the change of the concentration of two-dimensional electron gas controls the transformation of mode of resonance in modulating unit, and then realizes the dynamic phase modulation to THz wave in space.Concrete modulated process is: the negative voltage be connected with grid in modulator loads electrode 4 and adds negative voltage, the positive voltage be connected with source and drain loads electrode 3 and adds positive voltage, when generating positive and negative voltage difference is 0, HEMT is in conducting state, source electrode resonator and drain electrode resonator are communicated with by HEMT therebetween becomes overall, can see from mode chart 5, not during making alive, LC mode of resonance (pattern 1.) and dipole resonance pattern (pattern 2.) coexist and two kinds of Mode Coupling, electric field is mainly distributed in the position of laterally long Metallic rod up and down, as shown in Figure 6, now structural resonance frequency is 0.28THz, when generating positive and negative voltage difference is 4 ~ 10V, in HEMT between source and drain, two-dimensional electron gas is depleted, HEMT becomes pinch off state, now be in the state of disconnection between source electrode resonator and drain electrode resonator, separate work, can see pattern define top and the bottom separately independently the pattern of similar dipole 3., electric field mainly concentrates on the center of resonant element, as shown in Figure 6, now structural resonance frequency is 0.39THz.The Surface current distribution schematic diagram on the left of resonant element is only gived in figure, because resonant element is a kind of bilateral symmetry, the current distributions on the right side of it and left side symmetry.Become in large process in applied voltage difference gradually by zero, two-dimensional electron gas in HEMT reduces gradually, until exhaust, the mode of resonance of resonant element by pattern 1., 2. coupling coexistence state to pattern 3. independent existence change gradually, harmonic peak peak value offsets gradually, and the phase difference value of THz wave also increases gradually.Fig. 6 and Fig. 7 sets forth the three-dimensional artificial result of this phase converter amplitude and phase place transmission curve under HEMT switching state.As shown in Figure 7, in 0.28 frequency band range to 0.39THz, this phase-modulator can reach the phase modulation depth of more than 90 degree, and maximum phase depth of modulation can reach about 140 degree.Need it is noted that, by changing the structural parameters of resonant element, can the amount of bandwidth of control phase modulation, frequency band range and depth of modulation, the bandwidth of more than 90 degree depth of modulation can be made to reach more than 0.2THz by the method.
Above-mentioned High Electron Mobility Transistor Terahertz Spatial Phase Modulator does not obtain good simulation result by means of only the emulation of 3 D electromagnetic simulation softward, also demonstrates the feasibility of this device by experiment.As shown in Figure 8, solid line represents that HEMT is in phase place transmission curve when not pressurizeing conducting state, and dot-and-dash line represents that HEMT is in phase place transmission curve when pressurization disconnects, and dotted line represents phase modulation depth.As shown in Figure 8, the phase converter of different model has different modulation band-widths, but depth of modulation all can reach more than 90 degree, therefore according to different actual demands, the HEMT phase-modulator of processing and fabricating different model can be carried out by the parameter (such as metal ring radius) changing this phase converter.
In sum, the Terahertz Spatial Phase Modulator based on HEMT is a kind of automatically controlled high speed working in THz frequency range of high practicability, large depth of modulation, wide bandwidth phase modulator.
Although illustrate and describe embodiments of the invention above; be understandable that; above-described embodiment is exemplary; limitation of the present invention can not be interpreted as; for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (8)
1. based on a High Electron Mobility Transistor Terahertz Spatial Phase Modulator, this modulator comprises: Semiconductor substrate, is positioned at the epitaxial loayer in Semiconductor substrate, is positioned at modulating unit array, positive electrode, negative electrode on epitaxial loayer; Each modulating unit in described modulating unit array comprises: source class resonator, drain electrode resonator, gate connection line, semiconductor doping heterojunction structure; The resonator that wherein drains is identical with source electrode resonator structure, comprise: metal semicircular ring, "T"-shaped metal feeder, wherein "T"-shaped metal feeder is made up of horizontal minor matters and longitudinal minor matters, and longitudinal minor matters of described "T"-shaped metal feeder run through semicircular ring from metal semicircular ring top ecto-entad; Drain electrode resonator is relative with source electrode resonator semicircular ring opening and be symmetricly set in the both sides of gate connection line, the bottom of drain electrode resonator and source class resonator semicircular ring end is provided with semiconductor doping heterojunction structure, in order to connect drain electrode resonator and source electrode resonator, this semiconductor doping heterojunction structure is positioned at the bottom of gate connection line simultaneously; In described modulating unit array, often row array element shares same gate connection line, and the gate connection line of each row connects same negative electrode; The horizontal minor matters of "T"-shaped metal feeder of resonator of draining in described often row modulating unit are communicated with successively, and connect positive electrode; In described often row modulating unit, the horizontal minor matters of the "T"-shaped metal feeder of source electrode resonator are communicated with successively, and connect positive electrode.
2. as claimed in claim 1 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that described drain electrode resonator is connected with semiconductor doping heterojunction structure by a metal electrode with the end of source electrode resonator.
3. as claimed in claim 1 or 2 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that the end of semicircular ring in described drain electrode resonator and source electrode resonator arranges a brachyplast joint extended to the center of circle.
4. as claimed in claim 1 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that the part that described gate connection line is positioned on semiconductor doping heterojunction structure is narrower than other parts.
5. as claimed in claim 1 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that the material of described semiconductor doping heterojunction structure is AlGaN/GaN, InGaN/GaN, AlGaAs/GaAs, AlGaAs/InGaAs or AlGaAs/InGaAs/InP, oblique line represents the combination of bi-material.
6. as claimed in claim 1 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that described Semiconductor substrate selection is sapphire, High Resistivity Si or silit.
7. as claimed in claim 2 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that described metal electrode material is Ti, Al, Ni, Au.
8. as claimed in claim 1 a kind of based on High Electron Mobility Transistor Terahertz Spatial Phase Modulator, it is characterized in that the material of described drain electrode resonator, source electrode resonator, metal feeder is Au, Ag, Cu, Al.
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| CN108417589A (en) * | 2018-01-16 | 2018-08-17 | 电子科技大学 | Based on high electron mobility transistor wavefront fast scan imaging modulator |
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