CN114300820B - C-type ring coupling-based parallel topology on-chip super-structure terahertz switch - Google Patents
C-type ring coupling-based parallel topology on-chip super-structure terahertz switch Download PDFInfo
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- CN114300820B CN114300820B CN202111416216.2A CN202111416216A CN114300820B CN 114300820 B CN114300820 B CN 114300820B CN 202111416216 A CN202111416216 A CN 202111416216A CN 114300820 B CN114300820 B CN 114300820B
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Abstract
The invention discloses a C-shaped ring coupling-based parallel topology terahertz on-chip super-structure switch, which comprises an input ground-signal line-ground matching structure, a main transmission microstrip line, an auxiliary matching branch node line, a super-structure branch node, a feed control circuit and an output ground-signal line-ground matching structure, wherein the super-structure branch node comprises a first section of metal microstrip branch node line, a second section of metal microstrip branch node line, a HEMT, a metal C-shaped ring and a through hole grounding hexagon metal sheet, a source electrode of the HEMT is connected with the first section of metal microstrip branch node line and then connected with the main transmission microstrip line in a parallel topology mode, a drain electrode of the HEMT is connected with the second section of metal microstrip branch node line and then grounded through the through hole grounding hexagon metal sheet, the metal C-shaped ring is positioned on one side of the HEMT, an opening of the metal C-shaped ring is opposite to the HEMT, the feed control circuit is connected with the HEMT through electromagnetic coupling. The invention can improve the switching ratio while maintaining low insertion loss.
Description
Technical Field
The invention relates to an electric control dynamic switching device used for a terahertz wave band, in particular to a parallel topology on-chip super-structure terahertz switch based on C-shaped ring coupling, and belongs to the technical field of electromagnetic functional devices.
Background
Terahertz waves have great potential and important application in next-generation communication, radar and imaging systems due to the characteristics of high frequency and large bandwidth. The increasing application demands have prompted the rapid development of terahertz-function devices such as a ploidy/mixer, a modulator, a phase shifter and the like. Terahertz switches are one of the key devices for achieving signal isolation in the above system and also become related research hotspots.
At present, the implementation modes of terahertz switches mainly have two main types. The first is a switch chip based on a centralized parameter model and an equivalent circuit theory, which utilizes high-performance active materials such as InP, gaAs and the like and combines 1/4 wavelength matching and other technologies to realize terahertz on-chip switch design. For example, the literature reports that a single-pole double-throw switch working at 122 to 330GHz is realized by using a four-stage parallel 50nm grid line GaAs-based high electron mobility transistor, and the single-pole double-throw switch is realized at 220 to 325GHz by using six-stage parallel InP DHBT. The second is a novel quasi-optical switch based on artificial metamaterial, and the key point is that the electromagnetic characteristics of the artificial metamaterial are controlled through an active material so as to realize signal on-off. For example, the document reports that electromagnetic wave propagation switching and direction control are realized through a magnetic super-surface based on a resonant coupling array; the resonant switch is realized by utilizing terahertz polarization conversion in the super surface of the composite liquid crystal; the switchable super surface is realized by utilizing the electromagnetic induction transparency phenomenon.
In general, terahertz switches have been greatly improved by the rapid development of active materials such as transistors and artificial metamaterials. However, the rapidly growing application demands place more stringent index requirements on the terahertz function devices, such as lower insertion loss, higher switching ratio for terahertz switches. This makes both types of switches mentioned above a great challenge. For the switch design based on the equivalent circuit theory, limited by the influence of the processing technology of the transistor itself, more transistors are required to be added in the circuit to improve the switch performance. The terahertz wave frequency is high, the wavelength is short, and the working state under the sub-wavelength scale introduces stronger electromagnetic coupling and larger parasitic parameters for the traditional switch chip, so that the switch performance is drastically reduced. Whereas for a metamaterial-based terahertz switch, the switching characteristics tend to be derived from resonant coupling of periodic units inside the material. But the natural robustness of the periodic structure results in the need for more active material embeddings to achieve a change in the metamaterial electromagnetic properties, which puts higher demands on processing consistency, accessory feed circuit design, etc. In addition, in view of the interaction mode of the metamaterial and the electromagnetic wave, the terahertz switch based on the interaction mode often works in a quasi-optical mode, and chip-level system integration is difficult to realize.
The invention provides the characteristics of the two types of switches, combines the equivalent circuit model based on the 'path' with the electromagnetic coupling based on the 'field' to carry out analysis and optimization design, improves the utilization efficiency of materials such as a single transistor and the like, and simultaneously realizes lower insertion loss and higher switching ratio. To realize the combination of the "way" and the "field" and realize the on-chip switch design, the following difficulties need to be overcome. Firstly, because the propagation field in the microstrip line is in a quasi-TEM mode, the electric field mainly exists in a medium substrate, and effective interaction with an artificial microstructure is difficult to occur; secondly, because the field in the artificial microstructure is mostly embodied as a resonance mode, the connection between the resonance mode and a propagation mode in the microstrip needs to be established; thirdly, according to the connection between the resonance and the propagation modes, the optimal condition for realizing the chip switch through coupling is searched; finally, it is necessary to design an artificial microstructure that satisfies the conditions and to enable efficient interaction with the active material, and to achieve switching regulation by switching the coupling mode.
Disclosure of Invention
The invention aims to provide a parallel topology on-chip super-structure terahertz switch based on C-type ring coupling, which aims at overcoming the defects of the prior art, and the terahertz dynamic switch utilizes a High Electron Mobility Transistor (HEMT) to control electromagnetic coupling introduced by a C-type ring to change the impedance property of a circuit, so that the switching ratio can be improved compared with a common switch without C-type ring coupling while keeping low insertion loss and no degradation.
The invention aims at realizing the following technical scheme:
the utility model provides a super terahertz switch on parallelly connected topological piece based on C type ring coupling, includes input ground-signal line-ground matching structure, main transmission microstrip line, affiliated matching branch festival line, super branch festival, feed control circuit and output ground-signal line-ground matching structure, input ground-signal line-ground matching structure and output ground-signal line-ground matching structure pass through linewidth gradual change connection metal line and main transmission microstrip line connection, affiliated matching branch festival line is connected with main transmission microstrip line and ground connection, super branch festival includes first section metal microstrip branch festival line, second section metal microstrip branch festival line, high Electron Mobility Transistor (HEMT), metal C type ring and through-hole ground hexagon metal sheet, the source of HEMT is connected with first section metal microstrip branch festival line back and is connected with main transmission microstrip line in parallelly connected topological mode, the drain electrode of HEMT is connected with second section metal branch festival line back and is grounded through-hole ground hexagon metal sheet, metal C type ring opening is right to main transmission microstrip line, both are through electromagnetic coupling connection, control feed circuit is connected with HEMT.
Further, the feed control circuit comprises a feed metal wire, a large resistor and a HEMT which are sequentially connected in series, wherein the feed metal wire is connected with a grid electrode of the HEMT.
Further, the length of the metal microstrip branch line in the super-structure branch is adjustable so as to realize HEMT impedance characteristic conversion at the working frequency, and the line width, the size, the opening length and the position of the metal C-shaped ring are adjustable so as to realize different working frequencies.
Further, the shape of the metal C-ring in the super-structure branch is not limited to rectangle, and a circle, ellipse or other structures having the same topological characteristics may be used.
Further, the super structure branch can be multiple, so that better performance is achieved.
Further, the method comprises the steps of. The substrate material of the parallel topology on-chip super-structure terahertz switch based on C-type ring coupling adopts indium phosphide, gallium arsenide, gallium nitride, sapphire, silicon dioxide or high-resistance silicon.
The working mechanism of the invention is as follows: the terahertz wave propagates on the main transmission microstrip line after being input through the input ground-signal line-ground structure, when voltage is applied to the HEMT, two-dimensional electron gas is exhausted, electromagnetic coupling among the metal C-shaped ring, the metal microstrip branch node line and the HEMT in the super-structure branch is strong coupling, and the port impedance of the super-structure branch node is changed; when the voltage is removed from the HEMT, the two-dimensional electron gas is recovered, weak electromagnetic coupling is generated in the super-structure branch, and perturbation is generated on the impedance of the port of the super-structure branch; the HEMT control signal is input through the feed metal sheet, so that electromagnetic coupling control in the super-structure branch is realized, the impedance characteristic of the super-structure branch port is further changed, the on-off control of the terahertz wave signal is realized, and the terahertz wave is output through an output ground-signal line-ground structure.
According to the invention, through designing the metal C-shaped ring as required, the electromagnetic coupling mode in the super-structure branch is regulated and controlled, the impedance characteristic of the port of the super-structure branch is optimized, the utilization efficiency of HEMT is improved under the conditions of strong coupling and large parasitic parameters, and the performance indexes such as the switching ratio and the like are improved while the low insertion loss of the switching chip is ensured. The processing technology of the invention is mature (can be realized by laser etching and fine processing means), is convenient to manufacture and use, can work in the environment of normal temperature and normal pressure, and has good application potential and prospect.
Drawings
Fig. 1 is a schematic structural diagram of a terahertz on-chip super-structure switch chip according to the present invention.
Fig. 2 is a schematic structural diagram of the super-structure branch according to the present invention.
Fig. 3 is a simulation result of an embodiment of the terahertz on-chip super-structure switch chip.
Fig. 4 is a photomicrograph of a sample wafer of an embodiment of a terahertz on-chip super-structure switch chip according to the present invention.
Fig. 5 is a test result of an embodiment of the terahertz on-chip super-structure switch chip according to the present invention.
The marks in the figure: 1. an input ground-signal line-ground structure; 2. a main transmission microstrip line; 3. auxiliary matching branch node lines; 4. super-structure branches; 41. a first section of metal microstrip branch node line; 42. a second section of metal microstrip branch node line; 43. InP-HEMT; 44. a metal C-ring; 45. the through hole is grounded to the hexagonal metal sheet; 5. a feed control circuit; 6. output ground-signal line-ground structure.
Detailed Description
The technical scheme of the invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1 and 2, the on-chip super-structure terahertz switch based on the parallel topology of C-ring coupling provided in this embodiment includes an input ground-signal line-ground structure 1, a main transmission microstrip line 2, an auxiliary matching branch node line 3, a super-structure branch node 4, a feed control circuit 5, and an output ground-signal line-ground structure 6, where the input ground-signal line-ground structure 1 and the output ground-signal line-ground structure 6 include two through-hole grounding square metal sheets, a signal line, and a line width gradual change connection metal line, the through-hole grounding square metal sheets are located at two sides of the signal line, the signal line is connected with the main transmission microstrip line 2 through the line width gradual change connection metal line, and impedance matching with a standard probe station can be achieved by adjusting the sizes of the through-hole grounding square metal sheets. The super-structure branch 4 comprises a first section of metal micro-strip branch line 41, a second section of metal micro-strip branch line 42, an InP-HEMT43, a metal C-shaped ring 44 and a through hole grounding hexagonal metal sheet 45, wherein the source electrode of the InP-HEMT43 is connected with the first section of metal micro-strip branch line 41 in a parallel topology mode to connect the main transmission micro-strip line 2, the drain electrode of the InP-HEMT43 is connected with the second section of metal micro-strip branch line 42 and then grounded through the through hole grounding hexagonal metal sheet 45, the metal C-shaped ring 44 is positioned on one side of the InP-HEMT43, the opening of the metal C-shaped ring 44 is opposite to the InP-HEMT43, and the two are connected through electromagnetic coupling. By adjusting the lengths of the first section of metal microstrip branch line 41 and the second section of metal microstrip branch line 42, and adjusting the size of the metal C-shaped ring 44 so that the opening position thereof is opposite to the InP-HEMT43, electromagnetic coupling connection in the super-structure branch 4 can be achieved. The feed control circuit 5 includes a feed metal wire, a large resistor, and a feed metal sheet, and the feed metal wire is connected to the InP-HEMT43 gate, then connected in series to the large resistor, and then connected to the feed metal sheet to realize feeding. The auxiliary matching branch node line 3 comprises a microstrip matching branch node line and a through hole grounding hexagonal metal sheet, the microstrip matching branch node line is connected with the main transmission microstrip line 2 and then grounded through the through hole grounding hexagonal metal sheet, and impedance matching can be further realized by adjusting the length of the auxiliary matching branch node line 3.
When the terahertz wave is input through the input ground-signal line-ground structure 1 and then propagates on the main transmission microstrip line 2, when a voltage is applied to the InP-HEMT43 by the feed control circuit 5, two-dimensional electron gas is exhausted, electromagnetic coupling among the metal C-shaped ring 44, the first section of metal microstrip branch node line 41, the second section of metal microstrip branch node line 42 and the InP-HEMT43 in the super-structure branch node 4 is weak coupling, and a perturbation is generated on the port impedance of the super-structure branch node 4; when the voltage is removed from the InP-HEMT8, the two-dimensional electron gas is recovered, strong electromagnetic coupling is generated in the super-structure branch 4, and the impedance characteristic of the port of the super-structure branch 4 is changed; the control signal of the InP-HEMT43 is input through the feeding metal sheet in the feeding control circuit 5 to realize electromagnetic coupling control in the super-structure branch 4, further change the impedance characteristics of the port of the super-structure branch 4, realize terahertz wave signal on-off control, and the terahertz wave is finally output through the output ground-signal line-ground structure 6.
The substrate material used in this embodiment is InP, and the metal structure is Au.
The through-hole grounding square metal sheets in the input ground-signal line-ground structure 1 and the output ground-signal line-ground structure 6 adopted in the embodiment are separated from the center of the signal line by 50um; the line width of the main transmission microstrip line 2 is 48um; the InP-HEMT43 in the super-structure branch 4 adopts a 90nm gate length process, the line width of the metal C-shaped ring 9 is 4um, the opening is 20um, the size is 20um multiplied by 100um, and the interval between the metal C-shaped ring 9 and the InP-HEMT8 is 2um; the large resistance in the feed control circuit 5 is 5000 Ω.
The on-chip super-structure switch based on the parallel topology of C-ring coupling has good effect and high feasibility after simulation. As shown in fig. 3, in this embodiment, the large signal model of the InP-HEMT8 is combined with electromagnetic simulation to obtain S parameters at different voltage loading in the 210 to 260GHz band. The results show that the on-chip super-structure switch based on the parallel topology of C-shaped ring coupling has 20% higher switching than the circuit loaded by the metal-free C-shaped ring 44 under the condition of keeping the insertion loss unchanged. In combination with the simulation model of the embodiment, the processing test is performed, the switch sample is shown in fig. 4, and the test result is shown in fig. 5. The insertion loss of the on-chip super-structure switch of the parallel topology based on C-type ring coupling is as low as below 1dB, and the switching ratio is 10dB. Therefore, the parallel topology on-chip super-structure switch based on C-type ring coupling has the characteristics of ensuring low insertion loss and improving the switching ratio.
The foregoing is merely a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any modification and substitution based on the technical scheme and the inventive concept provided by the present invention should be covered in the scope of the present invention.
Claims (6)
1. The utility model provides a super terahertz switch that constructs on parallelly connected topology piece based on C ring coupling which characterized in that: the high-electron mobility transistor (HEMT), the metal C-shaped ring and the through hole grounding hexagonal metal sheet are connected, the source electrode of the HEMT is connected with the first section of metal microstrip branch line in a parallel topology mode, the drain electrode of the HEMT is connected with the second section of metal microstrip branch line and then grounded through the through hole grounding hexagonal metal sheet, the metal C-shaped ring is positioned on one side of the HEMT and is opened to face the HEMT, the metal C-shaped ring is connected with the HEMT through electromagnetic coupling, and the control circuit is connected with the HEMT.
2. The parallel topology on-chip super-structure terahertz switch based on C-ring coupling according to claim 1, wherein: the feed control circuit comprises a feed metal wire, a large resistor and a HEMT which are sequentially connected in series, wherein the feed metal wire is connected with a grid electrode of the HEMT.
3. The parallel topology on-chip super-structure terahertz switch based on C-ring coupling according to claim 1, wherein: the line width, the size and the opening length of the metal C-shaped ring in the super-structure branch are adjustable so as to realize different working frequencies.
4. The parallel topology on-chip super-structure terahertz switch based on C-ring coupling according to claim 1, wherein: the metal C-shaped ring in the super-structure branch is rectangular, circular, elliptical or other structures with the same topological characteristics.
5. The parallel topology on-chip super-structure terahertz switch based on C-ring coupling according to claim 1, wherein: the super structure branches are multiple, so that better performance is realized.
6. The parallel topology on-chip super-structure terahertz switch based on C-ring coupling according to claim 1, wherein: the substrate material of the parallel topology on-chip super-structure terahertz switch based on C-type ring coupling adopts indium phosphide, gallium arsenide, gallium nitride, sapphire, silicon dioxide or high-resistance silicon.
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