CN113517365A - Photoelectric synapse device based on transparent oxide and application thereof - Google Patents
Photoelectric synapse device based on transparent oxide and application thereof Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000002346 layers by function Substances 0.000 claims abstract description 22
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 35
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 34
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 34
- 238000004544 sputter deposition Methods 0.000 claims description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- 150000002500 ions Chemical class 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 230000005693 optoelectronics Effects 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 210000004556 brain Anatomy 0.000 claims description 5
- 229910014031 strontium zirconium oxide Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 239000012298 atmosphere Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 230000009782 synaptic response Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 5
- 230000000638 stimulation Effects 0.000 abstract description 4
- 238000013528 artificial neural network Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 16
- 239000013077 target material Substances 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000007787 long-term memory Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 210000002569 neuron Anatomy 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Abstract
The invention discloses a photoelectric synapse device based on transparent oxide and application thereof, belonging to the technical field of artificial neural networks, and comprising a substrate, and a functional layer and an ion light-emitting layer which are sequentially stacked on the substrate; metal electrodes are respectively arranged on two sides of the ion luminous layer, and the bottoms of the two metal electrodes are in contact with the upper surface of the functional layer; the ion emitting layer is a perovskite type oxide, and the perovskite type oxide is doped with rare earth elements. The photoelectric synapse device can make synapse response to light with a large range of wavelengths, and has large resistance under the stimulation of small electric signals or optical signals, so that the photoelectric synapse device has low power consumption, and the stability and the uniformity of the photoelectric synapse device are improved.
Description
Technical Field
The invention relates to the technical field of artificial neural networks, in particular to a photoelectric synapse device based on transparent oxides and application thereof.
Background
With the progress of the modernization of the society and the continuous improvement of the informatization, higher requirements are put on the processing capacity of information, although the requirements can be met with the continuous reduction of the characteristic size of the microelectronic device. However, in recent decades, the feature size of microelectronic devices has gradually entered the limit, and the current computer system based on the traditional von neumann architecture has limited its processing speed to the transmission of data due to the separation of its computation and storage, which is difficult to be improved at the level of the existing limit, and it also faces some problems such as power consumption and non-real-time computation.
Brain-like computing that simulates the human brain thus walks the field of view of scientists, and the brain is expected to become a possible choice for solving the bottleneck challenge faced by modern computers due to its ultra-strong information processing capability, learning capability and information processing mode of storing and computing in parallel. Neurons are the basic unit of the brain, and synapses, the main body of information transmission between neurons, are the basic structure that can store and calculate information at the same time, so that simulating the neurosynaptic is the most important factor in brain-like calculation.
At present, for the existing light-regulation synapse device, light matched with the energy of the forbidden bandwidth of the synapse function layer needs to be selected, that is, light with a specific wavelength is needed, and for light with energy not matched with the wavelength, the response cannot be made to realize the synapse function, which undoubtedly limits the application scene and the application range of the photoelectric synapse device; moreover, the conventional photoelectric synapse device has large power consumption, and the output is unstable when synapse response is simulated for many times.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a photoelectric synapse device based on a transparent oxide. The invention eliminates the defect that the photoelectric synapse device only can respond to light with specific wavelength by introducing the ion luminescent layer, and improves the application range of the photoelectric synapse device; and the wide-band-gap transparent doped oxide is used, so that the power consumption of the device is reduced, and the stability is improved.
The invention relates to a photoelectric synapse device based on transparent oxide and application thereof, which are realized by the following technical scheme:
the invention provides a photoelectric synapse device based on a transparent oxide, which comprises a substrate, and a functional layer and an ion-emitting layer which are sequentially stacked on the substrate;
metal electrodes are respectively arranged on two sides of the ion luminous layer, and the bottoms of the two metal electrodes are in contact with the upper surface of the functional layer;
the ion emitting layer is a perovskite type oxide, wherein the perovskite type oxide is doped with a rare earth element.
Further, the perovskite type oxide is BaTiO3Or SrZrO3。
Further, the rare earth element is one or more of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb.
Furthermore, the doping mole percentage of the rare earth elements in the ion luminescent layer is 0.1-1.0%.
Further, the functional layer is a gallium oxide film, and the gallium oxide film is doped with Cu or Al.
Furthermore, in the functional layer, the doping mole percentage of Cu or Al is 4-6%.
Further, the functional layer is provided on the substrate by:
introducing mixed gas of argon and oxygen in vacuum by adopting a magnetron co-sputtering method, simultaneously sputtering gallium oxide and Cu or Al on the substrate for 5-10 min to obtain a Cu or Al doped gallium oxide film;
then the gallium oxide film doped with Cu or Al is coated on N2And carrying out annealing treatment in the atmosphere, and finishing the functional layer arranged on the substrate after annealing.
Further, the thickness of the functional layer is 20-50 nm; the thickness of the ion light-emitting layer is 40-60 nm.
Further, the substrate is a heavily doped N-type Si substrate.
Further, the metal electrode is any one of Cu, Ag, Au, and Pt.
Further, the metal electrode is a circular hole electrode; the diameter of the circular hole electrode is 0.3mm or 0.5 mm; and the thickness of the round hole electrode is 80-100 nm.
The second purpose of the invention is to provide an application of the above photoelectric synapse device in simulating synaptic response in human brain.
Compared with the prior art, the invention has the following beneficial effects:
the rare earth doped ion light-emitting layer is introduced, so that the response of the photoelectric synapse device to light is not limited to the forbidden bandwidth of a functional material layer of the synapse device, the photoelectric synapse device can almost make synapse response to light with a large range of wavelengths, and the application scene of the photoelectric synapse device is expanded. The wide-band gap Cu or Al-doped gallium oxide thin film material is used as a functional material layer of the photoelectric synapse device, so that the wide-band gap Cu or Al-doped gallium oxide thin film material has high resistance (the current can be reduced to 10-10A) under the stimulation of a small electric signal or optical signal, and low power consumption is achieved.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
FIG. 2 is an I-V curve of 22 times of simulation of long-term memory under electrical signal stimulation for the optoelectronic synapse device in example 1.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Example 1
Referring to fig. 1, the present embodiment provides a transparent oxide-based photoelectric synapse device, comprising a heavily doped N-type Si substrate 1, a Cu-doped transparent oxide gallium oxide thin film 2 disposed on the heavily doped N-type Si substrate 1, and a Cu-doped transparent oxide gallium oxide thin film 2 disposed on the Cu-doped transparent oxide gallium oxide thin film 2BaTiO provided with Er-doped33, Er-doped BaTiO3The metal electrode 4 is arranged on the electrode 3, and the metal electrode 4 is a silver electrode.
The thickness of the Cu-doped gallium oxide thin film 2 of the present example was 30 nm; the molar ratio of Cu doping atoms is 4.3 percent; the Ag thickness of the metal electrode 4 was 100nm, and the metal electrode 4 was a circular hole electrode with a diameter of 0.3 mm.
The photoelectric synapse device based on the transparent oxide is prepared by the following method:
(1) substrate cleaning
Heavily doped N-type Si substrate 1 is scribed into 1 x 1cm by a diamond pen2And (4) soaking the substrate in HF for 5min to remove the natural oxide layer on the surface of the substrate. And then, ultrasonically cleaning the heavily doped N-type Si substrate 1 with acetone, alcohol and deionized water in an ultrasonic cleaning machine for 15min, and ultrasonically cleaning with alcohol in the ultrasonic cleaning machine for 5min to complete the cleaning of the heavily doped N-type Si substrate 1.
(2) And preparing a functional layer 2-Cu-doped gallium oxide film.
1X 1cm after washing2The heavy doping N type Si substrate 1 of the size is dried by a nitrogen gun, then is put into a corresponding substrate tray, and then is fixed on a substrate table in a magnetron sputtering chamber, a gallium oxide target material is placed on a target material source in magnetron sputtering, and two Cu sheets are separately attached to the central position of the target material. After the operations are finished, the chamber door is closed, the mechanical pump and the pre-pumping valve are opened, the front-stage valve is opened at the same time, after the chamber is vacuumized to be below 10Pa, the molecular pump is opened, and then the chamber is vacuumized to 8 multiplied by 10-4Pa or less, in the process, the sputtering power is set to 120W, and the pressure is set to 1.2Pa, so as to facilitate the glow starting. After the vacuum pumping is completed, the inflation valve is opened, the mixed gas of argon and oxygen is introduced, and the argon gas: setting oxygen flow at 45sccm:5sccm, turning on the power switch to start brightness when the pressure of the chamber reaches 1.2Pa, adjusting the pressure of the chamber to 0.6Pa after the brightness is observed, adjusting the main valve by the equipment to make the pressure of the chamber reach a set value, turning on the substrate to rotate for 5min to remove the impuritiesOther unknown substances on the surface of the target material and the improvement of sputtering stability. And after the pre-sputtering is finished, opening a substrate baffle, growing the Cu-doped gallium oxide film, and sputtering for 7min to finish the growth of the preset 30nm Cu-doped gallium oxide film. And (3) closing the instruments in sequence after the sputtering is finished, taking out the sputtered film, and annealing the film for 10min in a nitrogen atmosphere on a hot table at 300 ℃ to eliminate the stress and other defects of the film.
(3) Ionic luminescent layer 3-Er-doped BaTiO3Preparation of the film of (2)
Continuously placing the annealed film into a magnetron sputtering chamber, reserving a position with the width of one millimeter on the four sides of the top, and then vacuumizing, wherein the target material source is 2, and 0.4% Er-doped BaTiO3A ceramic target material. To be pumped to 8 × 10-4When the pressure is lower than Pa, the sputtering power, the chamber pressure and the argon flow are respectively selected to be 140W, 1.2Pa and 50sccm, after the pre-sputtering is carried out for 5min, the chamber pressure is adjusted back to 0.8Pa, and the formal sputtering is carried out for 4min, so that the preparation of the ion luminescent layer is completed.
(4) Preparation of the Metal electrode 4
And placing the prepared devices of the functional layer 2 and the ion luminous layer 3 on a mask, and performing electrode evaporation by using vacuum evaporation equipment, wherein in the process, the evaporation current is adjusted to 111.1A, the evaporation rate is controlled to be 0.7nm/s, the thickness of the Ag electrode is controlled to be 100nm, and the circular hole metal electrode with the diameter of 0.3mm is subjected to evaporation.
Example 2
The embodiment provides a photoelectric synapse device based on a transparent oxide, which comprises a heavily doped N-type Si substrate 1, an Al-doped transparent oxide gallium oxide film 2 arranged on the heavily doped N-type Si substrate 1, and a Gd-doped BaTiO arranged on the Al-doped transparent oxide gallium oxide film 233, Gd-doped BaTiO3The metal electrode 4 is arranged on the electrode 3, and the metal electrode 4 is a copper electrode.
The thickness of the Al-doped gallium oxide film 2 of the present example is 30 nm; the molar ratio of Al doping atoms is 4 percent; the Cu thickness of the metal electrode 4 was 80nm, and the metal electrode 4 was a circular hole electrode with a diameter of 0.3 mm.
The photoelectric synapse device based on the transparent oxide is prepared by the following method:
(1) substrate cleaning
Heavily doped N-type Si substrate 1 is scribed into 1 x 1cm by a diamond pen2And (4) soaking the substrate in HF for 5min to remove the natural oxide layer on the surface of the substrate. And then, ultrasonically cleaning the heavily doped N-type Si substrate with acetone, alcohol and deionized water in an ultrasonic cleaning machine for 15min, and ultrasonically cleaning with alcohol in the ultrasonic cleaning machine for 5min to complete the cleaning of the heavily doped N-type Si substrate 1.
(2) And preparing the functional layer 2, namely the Al-doped gallium oxide film.
1X 1cm after washing2The heavy doping N type Si substrate 1 of the size is dried by a nitrogen gun, then is put into a corresponding substrate tray, and then is fixed on a substrate table in a magnetron sputtering chamber, a gallium oxide target material is placed on a target material source in magnetron sputtering, and two Cu sheets are separately attached to the central position of the target material. After the operations are finished, the chamber door is closed, the mechanical pump and the pre-pumping valve are opened, the front-stage valve is opened at the same time, after the chamber is vacuumized to be below 10Pa, the molecular pump is opened, and then the chamber is vacuumized to 8 multiplied by 10-4Pa or less, in the process, the sputtering power is set to 120W, and the pressure is set to 1.2Pa, so as to facilitate the glow starting. After the vacuum pumping is completed, the inflation valve is opened, the mixed gas of argon and oxygen is introduced, and the argon gas: and setting the oxygen flow as 45sccm:5sccm, turning on a power switch after the chamber pressure reaches 1.2Pa, starting, observing a starting phenomenon, then re-adjusting the chamber pressure to 0.6Pa, automatically adjusting a main valve by the equipment to enable the chamber pressure to reach a set value, turning on a substrate to rotate after the set value is reached, and performing pre-sputtering for 5min to remove other unknown substances on the surface of the target and improve the sputtering stability. And after the pre-sputtering is finished, opening the substrate baffle, growing the Al-doped gallium oxide film, and sputtering for 11min to finish the growth of the preset 30nm Al-doped gallium oxide film. And (3) closing the instruments in sequence after the sputtering is finished, taking out the sputtered film, and annealing the film for 10min in a nitrogen atmosphere on a hot table at 300 ℃ to eliminate the stress and other defects of the film.
(3) Ionic luminescent layer 3-Gd-doped BaTiO3Preparation of the film of (2)
Continuously placing the annealed film into a magnetron sputtering chamber, reserving a position with a width of one millimeter on four sides of the top, and then vacuumizing, wherein the target material source is 2 and 0.4% Gd-doped BaTiO3A ceramic target material. To be pumped to 8 × 10-4When the pressure is lower than Pa, the sputtering power, the chamber pressure and the argon flow are respectively selected to be 140W, 1.2Pa and 50sccm, after the pre-sputtering is carried out for 5min, the chamber pressure is adjusted back to 0.8Pa, and the formal sputtering is carried out for 4min, so that the preparation of the ion luminescent layer is completed.
(4) Preparation of the Metal electrode 4
And placing the prepared devices of the functional layer 2 and the ion luminous layer 3 on a mask, and performing electrode evaporation by using vacuum evaporation equipment, wherein in the process, the evaporation current is adjusted to 111.1A, the evaporation rate is controlled to be 0.7nm/s, the thickness of the Cu electrode is controlled to be 80nm, and the circular hole metal electrode with the diameter of 0.3mm is subjected to evaporation.
Example 3
The embodiment provides a photoelectric synapse device based on a transparent oxide, which comprises a heavily doped N-type Si substrate 1, a Cu-doped transparent oxide gallium oxide film 2 arranged on the heavily doped N-type Si substrate 1, and a Gd-doped SrZrO arranged on the Cu-doped transparent oxide gallium oxide film 233, Gd-doped SrZrO3The metal electrode 4 is arranged on the electrode 3, and the metal electrode 4 is Ag.
The thickness of the Cu-doped gallium oxide thin film 2 of the present example was 40 nm; the molar ratio of Cu doping atoms is 4.3 percent; the thickness of the metal electrode 4 is 90nm, and the metal electrode 4 is a circular hole electrode with a diameter of 0.5 mm.
The photoelectric synapse device based on the transparent oxide is prepared by the following method:
(1) substrate cleaning
Heavily doped N-type Si substrate 1 is scribed into 1 x 1cm by a diamond pen2And (4) soaking the substrate in HF for 5min to remove the natural oxide layer on the surface of the substrate. Then, the heavily doped N-type Si substrate 1 with the natural oxide layer removed is ultrasonically cleaned for 15min in an ultrasonic cleaning machine by acetone, alcohol and deionized water in sequence, and then is ultrasonically cleaned for 5min in the ultrasonic cleaning machine by alcohol, thus completing the heavy dopingAnd cleaning the hetero N type Si substrate 1.
(2) And preparing a functional layer 2-Cu-doped gallium oxide film.
Then put into a corresponding substrate tray, and then fixed on a substrate table in a magnetron sputtering chamber, the gallium oxide target is placed on a target source in magnetron sputtering, and two Cu sheets are separately attached to the center of the target. After the operations are finished, the chamber door is closed, the mechanical pump and the pre-pumping valve are opened, the front-stage valve is opened at the same time, after the chamber is vacuumized to be below 10Pa, the molecular pump is opened, and then the chamber is vacuumized to 8 multiplied by 10-4Pa or less, in the process, the sputtering power is set to 120W, and the pressure is set to 1.2Pa, so as to facilitate the glow starting. After the vacuum pumping is completed, the inflation valve is opened, the mixed gas of argon and oxygen is introduced, and the argon gas: and setting the oxygen flow as 45sccm:5sccm, turning on a power switch after the chamber pressure reaches 1.2Pa, starting, observing a starting phenomenon, then re-adjusting the chamber pressure to 0.6Pa, automatically adjusting a main valve by the equipment to enable the chamber pressure to reach a set value, turning on a substrate to rotate after the set value is reached, and performing pre-sputtering for 5min to remove other unknown substances on the surface of the target and improve the sputtering stability. And after the pre-sputtering is finished, opening a substrate baffle, growing the Cu-doped gallium oxide film, and sputtering for 9min to finish the growth of the preset 30nm Cu-doped gallium oxide film. And (3) closing the instruments in sequence after the sputtering is finished, taking out the sputtered film, and annealing the film for 10min in a nitrogen atmosphere on a hot table at 300 ℃ to eliminate the stress and other defects of the film.
(3) Ionic luminescent layer 3-Gd-doped SrZrO3Preparation of the film of (2)
Continuously placing the annealed film into a magnetron sputtering chamber, reserving a position with a width of one millimeter on four sides of the top, and then vacuumizing, wherein the target material source is 2 and 0.4% Gd-doped SrZrO3A ceramic target material. To be pumped to 8 × 10-4When the pressure is lower than Pa, the sputtering power, the chamber pressure and the argon gas flow are respectively selected to be 145W, 1.2Pa and 50sccm, after the pre-sputtering is carried out for 4min, the chamber pressure is adjusted back to be 0.8Pa, and the formal sputtering is carried out for 4min, so that the preparation of the ion light-emitting layer is completed.
(4) Preparation of the Metal electrode 4
And placing the prepared devices of the functional layer 2 and the ion luminous layer 3 on a mask, and performing electrode evaporation by using vacuum evaporation equipment, wherein in the process, the evaporation current is adjusted to 111.1A, the evaporation rate is controlled to be 0.7nm/s, the thickness of the Ag electrode is controlled to be 90nm, and the circular hole metal electrode with the diameter of 0.5mm is subjected to evaporation.
In order to verify the performance of the optoelectronic synapse device of example 1, a semiconductor parameter meter 4200 is used, the scanning range is 0-5v, the step size is 0.01v, the scanning direction is 0-5v-0, and 22 times of electrical stimulation simulation long-term memory is performed, and as shown in fig. 1, it can be seen that the current is 10 at 0.15v-10Class A, and in 22 times of simulated long-term memories, the abrupt voltage has an offset of only 0.35v, which shows that the photoelectric synapse device of the invention has high stability.
It is to be understood that the above-described embodiments are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Claims (10)
1. A photoelectric synapse device based on transparent oxide is characterized by comprising a substrate, and a functional layer and an ion light-emitting layer which are sequentially stacked on the substrate;
metal electrodes are respectively arranged on two sides of the ion luminous layer, and the bottoms of the two metal electrodes are in contact with the upper surface of the functional layer;
the ion emitting layer is a perovskite type oxide, and the perovskite type oxide is doped with rare earth elements.
2. The optoelectronic synapse device of claim 1, wherein the perovskite-type oxide is BaTiO3Or SrZrO3。
3. The optoelectronic synapse device of claim 2, wherein the rare earth element is one or more of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb.
4. The optoelectronic synapse device of claim 3, wherein the ion-emitting layer comprises a rare earth element doped in a molar percentage of 0.1-1.0%.
5. The optoelectronic synapse device of claim 1, wherein the functional layer is a gallium oxide thin film, and the gallium oxide thin film is doped with Cu or Al.
6. The optoelectronic synapse device of claim 5, wherein the functional layer comprises Cu or Al doped in a molar percentage of 4-6%.
7. The optoelectronic synapse device of claim 6, wherein the functional layer is disposed on the substrate by:
introducing mixed gas of argon and oxygen in vacuum by adopting a magnetron co-sputtering method, simultaneously sputtering gallium oxide and Cu or Al on the substrate for 5-10 min to obtain a Cu or Al doped gallium oxide film;
then the gallium oxide film doped with Cu or Al is coated on N2And carrying out annealing treatment in the atmosphere, and finishing the functional layer arranged on the substrate after annealing.
8. The optoelectronic synapse device of claim 1, wherein the functional layer has a thickness of 20-50 nm; the thickness of the ion light-emitting layer is 40-60 nm.
9. The optoelectronic synapse device of claim 1, wherein the substrate is a heavily doped N-type Si substrate; the metal electrode is any one of Cu, Ag, Au and Pt;
the metal electrode is a round hole electrode; the diameter of the circular hole electrode is 0.3mm or 0.5 mm; and the thickness of the round hole electrode is 80-100 nm.
10. Use of an optoelectronic synapse device as claimed in any of claims 1-9 for simulating synaptic responses in a human brain.
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